JP6538375B2 - 硬脆性基板の平坦化加工方法 - Google Patents
硬脆性基板の平坦化加工方法 Download PDFInfo
- Publication number
- JP6538375B2 JP6538375B2 JP2015044338A JP2015044338A JP6538375B2 JP 6538375 B2 JP6538375 B2 JP 6538375B2 JP 2015044338 A JP2015044338 A JP 2015044338A JP 2015044338 A JP2015044338 A JP 2015044338A JP 6538375 B2 JP6538375 B2 JP 6538375B2
- Authority
- JP
- Japan
- Prior art keywords
- hard
- brittle substrate
- grinding
- chuck
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 130
- 238000000034 method Methods 0.000 title claims description 27
- 239000013078 crystal Substances 0.000 claims description 40
- 238000001179 sorption measurement Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 14
- 230000009467 reduction Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 description 40
- 230000007246 mechanism Effects 0.000 description 15
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 238000003672 processing method Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229920000092 linear low density polyethylene Polymers 0.000 description 2
- 239000004707 linear low-density polyethylene Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Jigs For Machine Tools (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015044338A JP6538375B2 (ja) | 2015-03-06 | 2015-03-06 | 硬脆性基板の平坦化加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015044338A JP6538375B2 (ja) | 2015-03-06 | 2015-03-06 | 硬脆性基板の平坦化加工方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016163914A JP2016163914A (ja) | 2016-09-08 |
JP2016163914A5 JP2016163914A5 (zh) | 2018-05-10 |
JP6538375B2 true JP6538375B2 (ja) | 2019-07-03 |
Family
ID=56876406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015044338A Active JP6538375B2 (ja) | 2015-03-06 | 2015-03-06 | 硬脆性基板の平坦化加工方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6538375B2 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106239742B (zh) * | 2016-09-29 | 2019-01-04 | 漳州市天趣数控设备有限公司 | 一种陶瓷车雕机 |
CN112743370A (zh) * | 2020-12-29 | 2021-05-04 | 杭州峰峦贸易有限公司 | 用于薄壁短管的辅助加工装置及使用方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1015795A (ja) * | 1996-07-08 | 1998-01-20 | Koyo Mach Ind Co Ltd | 単結晶材料の方位修正用支持装置および研削装置 |
JP3348429B2 (ja) * | 1996-12-26 | 2002-11-20 | 信越半導体株式会社 | 薄板ワーク平面研削方法 |
JP2008114326A (ja) * | 2006-11-02 | 2008-05-22 | Sharp Corp | 研削加工装置 |
KR101230276B1 (ko) * | 2007-06-25 | 2013-02-06 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 단결정체의 결정학적 재배향 방법 |
-
2015
- 2015-03-06 JP JP2015044338A patent/JP6538375B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2016163914A (ja) | 2016-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2176028B1 (en) | Methods of crystallographically reorienting single crystal bodies | |
JP5513647B2 (ja) | サファイア基板及びその製造方法 | |
JP2009246240A (ja) | 半導体ウェーハ裏面の研削方法及びそれに用いる半導体ウェーハ裏面研削装置 | |
CN111630213B (zh) | 单晶4H-SiC生长用籽晶及其加工方法 | |
JP2010514581A (ja) | サファイア基板及びその製造方法 | |
WO2012164757A1 (ja) | 柱状部材の加工装置 | |
JP2023059932A (ja) | ツルーイング方法及び面取り装置 | |
JP6538375B2 (ja) | 硬脆性基板の平坦化加工方法 | |
TWI804670B (zh) | 半導體裝置的製造方法和製造裝置 | |
JP6271339B2 (ja) | 研削研磨装置 | |
JP2016163914A5 (zh) | ||
JP2012121096A (ja) | 研削装置 | |
JP2009095952A (ja) | ウェハの製造方法 | |
JP2016060031A (ja) | 研削ホイール | |
JP7373938B2 (ja) | 調整方法 | |
JP5387887B2 (ja) | 面取り加工方法及び面取り加工装置 | |
JP6812068B2 (ja) | 加工方法 | |
WO2015172014A1 (en) | High quality sapphire substrates and method of making said sapphire substrates | |
JP2019093518A (ja) | 被加工物の加工方法 | |
JP5150196B2 (ja) | シリコンウエハの製造方法 | |
TWI602651B (zh) | A Compound Chemical Mechanical Dresser | |
TW202239518A (zh) | 磨削方法 | |
TWI621502B (zh) | Double chemical mechanical polishing trimming system and method thereof | |
JP2024101818A (ja) | 研削方法 | |
TWI231246B (en) | Method for polishing diamond wafer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180305 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20180305 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180323 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181113 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181120 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190604 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190606 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6538375 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |