JP6518071B2 - 固体撮像装置およびカメラ - Google Patents

固体撮像装置およびカメラ Download PDF

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Publication number
JP6518071B2
JP6518071B2 JP2015012532A JP2015012532A JP6518071B2 JP 6518071 B2 JP6518071 B2 JP 6518071B2 JP 2015012532 A JP2015012532 A JP 2015012532A JP 2015012532 A JP2015012532 A JP 2015012532A JP 6518071 B2 JP6518071 B2 JP 6518071B2
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Japan
Prior art keywords
area
solid
imaging device
state imaging
light shielding
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JP2015012532A
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English (en)
Japanese (ja)
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JP2016138935A (ja
JP2016138935A5 (enExample
Inventor
太朗 加藤
太朗 加藤
潤 伊庭
潤 伊庭
公一郎 岩田
公一郎 岩田
博男 赤堀
博男 赤堀
翔太 重森
翔太 重森
浩平 橋本
浩平 橋本
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2015012532A priority Critical patent/JP6518071B2/ja
Priority to EP16150024.4A priority patent/EP3048645A1/en
Priority to US14/996,774 priority patent/US9831278B2/en
Priority to CN201610040655.0A priority patent/CN105828000B/zh
Publication of JP2016138935A publication Critical patent/JP2016138935A/ja
Publication of JP2016138935A5 publication Critical patent/JP2016138935A5/ja
Application granted granted Critical
Publication of JP6518071B2 publication Critical patent/JP6518071B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2015012532A 2015-01-26 2015-01-26 固体撮像装置およびカメラ Active JP6518071B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015012532A JP6518071B2 (ja) 2015-01-26 2015-01-26 固体撮像装置およびカメラ
EP16150024.4A EP3048645A1 (en) 2015-01-26 2016-01-04 Solid-state image sensor and camera
US14/996,774 US9831278B2 (en) 2015-01-26 2016-01-15 Solid-state image sensor and camera with pixel openings
CN201610040655.0A CN105828000B (zh) 2015-01-26 2016-01-21 固态图像传感器和照相机

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015012532A JP6518071B2 (ja) 2015-01-26 2015-01-26 固体撮像装置およびカメラ

Publications (3)

Publication Number Publication Date
JP2016138935A JP2016138935A (ja) 2016-08-04
JP2016138935A5 JP2016138935A5 (enExample) 2018-03-01
JP6518071B2 true JP6518071B2 (ja) 2019-05-22

Family

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Family Applications (1)

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JP2015012532A Active JP6518071B2 (ja) 2015-01-26 2015-01-26 固体撮像装置およびカメラ

Country Status (4)

Country Link
US (1) US9831278B2 (enExample)
EP (1) EP3048645A1 (enExample)
JP (1) JP6518071B2 (enExample)
CN (1) CN105828000B (enExample)

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WO2016103430A1 (ja) * 2014-12-25 2016-06-30 キヤノン株式会社 ラインセンサ、画像読取装置、画像形成装置
JP6812969B2 (ja) * 2015-06-03 2021-01-13 ソニー株式会社 固体撮像素子、撮像装置、及び、固体撮像素子の製造方法
JP2017069553A (ja) 2015-09-30 2017-04-06 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
JP6600246B2 (ja) 2015-12-17 2019-10-30 キヤノン株式会社 撮像装置及びカメラ
JP6732468B2 (ja) 2016-02-16 2020-07-29 キヤノン株式会社 光電変換装置及びその駆動方法
JP6748529B2 (ja) * 2016-09-12 2020-09-02 キヤノン株式会社 撮像素子及び撮像装置
JP6738200B2 (ja) 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
US10319765B2 (en) 2016-07-01 2019-06-11 Canon Kabushiki Kaisha Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter
JP6817835B2 (ja) 2017-02-07 2021-01-20 キヤノン株式会社 撮像装置及び撮像システム
EP3605609A1 (en) * 2017-03-28 2020-02-05 Nikon Corporation Imaging element and imaging device
WO2018186329A1 (ja) * 2017-04-06 2018-10-11 パナソニックＩｐマネジメント株式会社 撮像装置、およびそれに用いられる固体撮像装置
JP2019041352A (ja) 2017-08-29 2019-03-14 キヤノン株式会社 撮像装置及び撮像システム
JP6643291B2 (ja) 2017-09-22 2020-02-12 キヤノン株式会社 撮像装置及びその駆動方法
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WO2020045278A1 (en) 2018-08-31 2020-03-05 Canon Kabushiki Kaisha Imaging device with motion dependent pixel binning
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JP7286445B2 (ja) 2019-06-28 2023-06-05 キヤノン株式会社 撮像装置および機器
JP7538618B2 (ja) 2020-05-01 2024-08-22 キヤノン株式会社 光電変換装置及び光電変換システム
JP7171649B2 (ja) 2020-05-15 2022-11-15 キヤノン株式会社 撮像装置および撮像システム
FR3131440A1 (fr) * 2021-12-24 2023-06-30 Isorg Capteur d'images et procédé de fabrication d'un tel capteur
JP2023125844A (ja) 2022-02-28 2023-09-07 キヤノン株式会社 光電変換装置、光電変換システムおよび移動体

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CN102227665B (zh) * 2008-11-27 2015-02-25 佳能株式会社 固态摄像元件和摄像设备
JP5398346B2 (ja) * 2009-05-19 2014-01-29 キヤノン株式会社 撮像装置及び信号処理装置
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Also Published As

Publication number Publication date
EP3048645A1 (en) 2016-07-27
US9831278B2 (en) 2017-11-28
JP2016138935A (ja) 2016-08-04
CN105828000A (zh) 2016-08-03
US20160218127A1 (en) 2016-07-28
CN105828000B (zh) 2019-03-05

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