JP6507211B2 - Pvdにより形成される窒化アルミニウム緩衝層を有する窒化ガリウムベースのledの製造 - Google Patents
Pvdにより形成される窒化アルミニウム緩衝層を有する窒化ガリウムベースのledの製造 Download PDFInfo
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- JP6507211B2 JP6507211B2 JP2017195555A JP2017195555A JP6507211B2 JP 6507211 B2 JP6507211 B2 JP 6507211B2 JP 2017195555 A JP2017195555 A JP 2017195555A JP 2017195555 A JP2017195555 A JP 2017195555A JP 6507211 B2 JP6507211 B2 JP 6507211B2
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- chamber
- gallium nitride
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- pvd
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- 229910002601 GaN Inorganic materials 0.000 title claims description 180
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 172
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 89
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims description 105
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 16
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- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
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- 229910052782 aluminium Inorganic materials 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
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- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 2
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910021480 group 4 element Inorganic materials 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 230000000873 masking effect Effects 0.000 description 1
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- 230000000877 morphologic effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
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- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
本出願は、2010年12月16日出願の米国仮特許出願第61/424,006号の利益を主張する2011年2月28日出願の米国特許出願第13/036,273号の利益を主張するものであり、上記特許文献の内容全体を本明細書に参照により組み込む。
また、本願は以下に記載する態様を含む。
(態様1)
アルミニウムを含むターゲットを有する物理的気相堆積(PVD)チャンバと、
アンドープ窒化ガリウムもしくはn型窒化ガリウムまたはそれら両方を堆積するように適合されたチャンバと
を備えたマルチチャンバシステム。
(態様2)
前記PVDチャンバの前記ターゲットが窒化アルミニウムを含む、態様1に記載のシステム。
(態様3)
アンドープ窒化ガリウムまたはn型窒化ガリウムを堆積するように適合された前記チャンバが、有機金属化学気相堆積(MOCVD)チャンバを備えている、態様1に記載のシステム。
(態様4)
アンドープ窒化ガリウムまたはn型窒化ガリウムを堆積するように適合された前記チャンバが、ハイドライド気相エピタキシ(HVPE)チャンバを備えている、態様1に記載のシステム。
(態様5)
前記PVDチャンバと、アンドープ窒化ガリウムまたはn型窒化ガリウムを堆積するように適合された前記チャンバとが、クラスタツール構成内に含まれている、態様1に記載のシステム。
(態様6)
前記PVDチャンバと、アンドープ窒化ガリウムまたはn型窒化ガリウムを堆積するように適合された前記チャンバとが、インラインツール構成内に含まれている、態様1に記載のシステム。
(態様7)
高速熱処理(RTP)チャンバまたはレーザアニーリングチャンバ
をさらに備えている、態様1に記載のシステム。
(態様8)
発光ダイオード(LED)構造を製造する方法であって、前記方法は、
マルチチャンバシステムの物理的気相堆積(PVD)チャンバ内で、基板の上に窒化アルミニウム層を形成すること、および
前記マルチチャンバシステムの第2のチャンバ内で、窒化アルミニウム層の上にアンドープ窒化ガリウムまたはn型窒化ガリウムの層を形成すること
を含む方法。
(態様9)
前記窒化アルミニウム層を形成することが、前記PVDチャンバ内に収容された窒化アルミニウムターゲットからのスパッタリングを含む、態様8に記載の方法。
(態様10)
前記第2のチャンバ内で前記アンドープ窒化ガリウムまたはn型窒化ガリウムの層を形成することが、第1の有機金属化学気相堆積(MOCVD)チャンバ内で形成することを含む、態様8に記載の方法。
(態様11)
前記マルチチャンバシステムの第2のMOCVDチャンバ内で、前記アンドープ窒化ガリウムまたはn型窒化ガリウムの層の上に多重量子井戸(MQW)構造を形成すること、および
前記マルチチャンバシステムの第3のMOCVDチャンバ内で、前記MQW構造の上にp型窒化アルミニウムガリウムまたはp型窒化ガリウムの層を形成すること
をさらに含む、態様10に記載の方法。
(態様12)
前記窒化アルミニウム層を形成することが、約20〜200℃の範囲内の基板温度で形成することを含む、態様8に記載の方法。
(態様13)
前記窒化アルミニウム層を形成することが、約20〜1200℃の範囲内の基板温度で形成することを含む、態様8に記載の方法。
(態様14)
前記窒化アルミニウム層の上に前記アンドープ窒化ガリウムまたはn型窒化ガリウムの層を形成する前に、高速熱処理(RTP)チャンバ内で前記窒化アルミニウム層をアニーリングすること
をさらに含む、態様8に記載の方法。
(態様15)
前記窒化アルミニウム層を形成する前に、タングステンターゲットを有する第2のPVDチャンバ内で前記基板の上にタングステン(W)層を形成すること
をさらに含む、態様8に記載の方法。
Claims (8)
- 発光ダイオード(LED)構造を製造する方法であって、前記方法は、
タングステンターゲットを有する、マルチチャンバシステムの第1の物理的気相堆積(PVD)チャンバ内で、基板の上にタングステン(W)層を形成することと、
前記マルチチャンバシステムの第2の物理的気相堆積(PVD)チャンバ内で、前記タングステン(W)層の上に窒化アルミニウム層を形成することと、
前記マルチチャンバシステムの第3のチャンバ内で、前記窒化アルミニウム層の上にアンドープ窒化ガリウムまたはn型窒化ガリウムの層を形成することと
を含む方法。 - 前記第3のチャンバ内で前記アンドープ窒化ガリウムまたはn型窒化ガリウムの層を形成することが、第1の有機金属化学気相堆積(MOCVD)チャンバ内で形成することを含む、請求項1に記載の方法。
- 前記マルチチャンバシステムの第2のMOCVDチャンバ内で、前記アンドープ窒化ガリウムまたはn型窒化ガリウムの層の上に多重量子井戸(MQW)構造を形成すること、および
前記マルチチャンバシステムの第3のMOCVDチャンバ内で、前記MQW構造の上にp型窒化アルミニウムガリウムまたはp型窒化ガリウムの層を形成すること
をさらに含む、請求項2に記載の方法。 - 前記第3のチャンバ内でアンドープ窒化ガリウムまたはn型窒化ガリウムを形成することが、ハイドライド気相エピタキシ(HVPE)チャンバ内で形成することである、請求項1に記載の方法。
- 前記窒化アルミニウム層を形成することが、約20〜200℃の範囲内の基板温度で形成することを含む、請求項1に記載の方法。
- 前記窒化アルミニウム層を形成することが、約200〜1200℃の範囲内の基板温度で形成することを含む、請求項1に記載の方法。
- 前記窒化アルミニウム層の上に前記アンドープ窒化ガリウムまたはn型窒化ガリウムの層を形成する前に、高速熱処理(RTP)チャンバ内で前記窒化アルミニウム層をアニーリングすることをさらに含む、請求項1に記載の方法。
- 前記窒化アルミニウム層を形成することが前記第2のPVDチャンバ内に収容された窒化アルミニウムターゲットからの非反応性スパッタリングを含む、請求項1に記載の方法。
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-
2011
- 2011-02-28 US US13/036,273 patent/US8409895B2/en active Active
- 2011-12-13 CN CN2011800601120A patent/CN103262215A/zh active Pending
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- 2011-12-13 JP JP2013544711A patent/JP2014506396A/ja active Pending
- 2011-12-13 KR KR1020137018159A patent/KR20140031851A/ko active Application Filing
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- 2011-12-13 CN CN201711365233.1A patent/CN107964647B/zh active Active
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KR102241833B1 (ko) | 2021-04-16 |
CN107964647A (zh) | 2018-04-27 |
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