JP6503093B2 - ゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ - Google Patents
ゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ Download PDFInfo
- Publication number
- JP6503093B2 JP6503093B2 JP2017562946A JP2017562946A JP6503093B2 JP 6503093 B2 JP6503093 B2 JP 6503093B2 JP 2017562946 A JP2017562946 A JP 2017562946A JP 2017562946 A JP2017562946 A JP 2017562946A JP 6503093 B2 JP6503093 B2 JP 6503093B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- gate
- channel
- field effect
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002184 metal Substances 0.000 title claims description 27
- 230000005669 field effect Effects 0.000 title claims description 16
- 238000001514 detection method Methods 0.000 title claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 230000005685 electric field effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1124—Devices with PN homojunction gate
- H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Details Of Aerials (AREA)
Description
10:FET
11:ソース
12:ドレイン
13:チャネル
14:誘電体層
15:ゲート
16:ソースメタル
Claims (6)
- ゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタにおいて、
シリコンベースと、
シリコンベースの一部にドーピングによって形成されるソースと、
平面上で前記ソースを取り囲む形態に形成されるチャネルと、
前記チャネル外部に形成されるドレインと、
前記ソース、チャネル、及びドレインの上に形成される誘電体層と、
前記誘電体層の上に位置するゲートと、
を含んで構成され、
平面上に前記ソースの中心と前記チャネルの中心は一定の距離離隔して形成され、前記ゲートは、メタルから構成され、前記誘電体層を介して前記チャネルの上に位置し、前記チャネルの上面を全て覆い、ソースの一部とドレインの一部とオーバラップされることを特徴とするゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ。 - 前記ソースは円形であり、前記チャネルは環状であることを特徴とする請求項1に記載のゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ。
- 前記ゲートは、前記チャネルと同一の形状の第1の環状部分、前記ソースとオーバラップする一定の幅の第2の環状部分及び前記ドレインとオーバラップする一定の幅の第3の環状部分を有することを特徴とする請求項2に記載のゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ。
- 前記第2の環状部分の幅は、前記第3の環状部分の幅と異なることを特徴とする請求項3に記載のゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ。
- 前記ソース上面に位置し、前記ソースと電気的に接続されるソースメタルをさらに含むことを特徴とする請求項4に記載のゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ。
- 前記ソースメタルは円形に構成され、前記ゲートとは電気的に分離することを特徴とする請求項5に記載のゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR2015/014578 WO2017115896A1 (ko) | 2015-12-31 | 2015-12-31 | 게이트 메탈을 안테나로 활용한 링 형의 테라헤르쯔파 검출용 전계효과트랜지스터 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018509004A JP2018509004A (ja) | 2018-03-29 |
JP6503093B2 true JP6503093B2 (ja) | 2019-04-17 |
Family
ID=59224811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017562946A Active JP6503093B2 (ja) | 2015-12-31 | 2015-12-31 | ゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ |
Country Status (3)
Country | Link |
---|---|
US (1) | US10020370B2 (ja) |
JP (1) | JP6503093B2 (ja) |
WO (1) | WO2017115896A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230000286A (ko) * | 2021-06-24 | 2023-01-02 | 울산과학기술원 | 테라헤르츠파 검출을 위한 성능인자가 독립적인 일체형 전계효과 트랜지스터-안테나 융합소자 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109781255B (zh) * | 2018-12-24 | 2021-03-09 | 广东工业大学 | 基于超材料的金属栅mosfet栅极光栅化的探测器 |
KR102314944B1 (ko) * | 2020-09-07 | 2021-10-21 | 울산과학기술원 | 실리콘 링 전계효과트랜지스터 어레이에 의한 활성 안테나 장치 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2750268B2 (ja) * | 1993-12-21 | 1998-05-13 | 株式会社エイ・ティ・アール光電波通信研究所 | マイクロ波集積回路付きアンテナ装置の製造方法 |
US5668392A (en) * | 1996-10-28 | 1997-09-16 | National Semiconductor Corporation | Low capacitance and low Vt annular MOSFET design for phase lock loop applications |
JPH10289993A (ja) * | 1997-04-15 | 1998-10-27 | Sony Corp | 固体撮像装置とその製造方法 |
US6649985B1 (en) * | 2000-07-14 | 2003-11-18 | Yamatake Corporation | Insulated-gate semiconductor device for a rectifier |
JP2004241471A (ja) * | 2003-02-04 | 2004-08-26 | Renesas Technology Corp | 化合物半導体装置とその製造方法、半導体装置及び高周波モジュール |
JP2010135520A (ja) | 2008-12-03 | 2010-06-17 | Panasonic Corp | テラヘルツ受信素子 |
US20100301217A1 (en) * | 2009-05-28 | 2010-12-02 | The Ohio State University | MINIATURE PHASE-CORRECTED ANTENNAS FOR HIGH RESOLUTION FOCAL PLANE THz IMAGING ARRAYS |
JP5563356B2 (ja) * | 2010-04-12 | 2014-07-30 | キヤノン株式会社 | 電磁波検出素子 |
JP2012175034A (ja) * | 2011-02-24 | 2012-09-10 | Panasonic Corp | テラヘルツ波素子 |
DE102011076840B4 (de) * | 2011-05-31 | 2013-08-01 | Johann Wolfgang Goethe-Universität Frankfurt am Main | Monolithisch integrierter Antennen- und Empfängerschaltkreis und THz-Heterodynempfänger und bildgebendes System, diesen aufweisend, und Verwendung dieser zur Erfassung elektromagnetischer Strahlung im THz-Frequenzbereich |
US9112037B2 (en) * | 2012-02-09 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101388655B1 (ko) * | 2012-05-29 | 2014-04-25 | 한국전기연구원 | 반응도 향상을 위해 비대칭 구조를 적용한 전계효과트랜지스터 테라헤르츠 검출기 |
JP2015144248A (ja) * | 2013-12-25 | 2015-08-06 | キヤノン株式会社 | 半導体装置、及びその製造方法 |
US20150200732A1 (en) * | 2014-01-10 | 2015-07-16 | Korea Advanced Institute Of Science And Technology | Transceivers using resonant coupling and nonlinear effect by plasma wave and receivers used in inter-chip or intra-chip communication |
US9966668B1 (en) * | 2014-05-15 | 2018-05-08 | Rockwell Collins, Inc. | Semiconductor antenna |
-
2015
- 2015-12-31 US US15/561,940 patent/US10020370B2/en active Active
- 2015-12-31 WO PCT/KR2015/014578 patent/WO2017115896A1/ko active Application Filing
- 2015-12-31 JP JP2017562946A patent/JP6503093B2/ja active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230000286A (ko) * | 2021-06-24 | 2023-01-02 | 울산과학기술원 | 테라헤르츠파 검출을 위한 성능인자가 독립적인 일체형 전계효과 트랜지스터-안테나 융합소자 |
KR102505015B1 (ko) * | 2021-06-24 | 2023-03-03 | 울산과학기술원 | 테라헤르츠파 검출을 위한 성능인자가 독립적인 일체형 전계효과 트랜지스터-안테나 융합소자 |
Also Published As
Publication number | Publication date |
---|---|
US10020370B2 (en) | 2018-07-10 |
JP2018509004A (ja) | 2018-03-29 |
US20180122912A1 (en) | 2018-05-03 |
WO2017115896A1 (ko) | 2017-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100487915C (zh) | 具有超结结构的半导体器件及其制造方法 | |
KR101391559B1 (ko) | 고전압 애플리케이션용 임베디드 JFETs | |
JP6503093B2 (ja) | ゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ | |
KR20150003044A (ko) | 반도체 기반의 홀 센서 | |
KR20170080010A (ko) | 게이트 메탈을 안테나로 활용한 링 형의 테라헤르쯔파 검출용 전계효과트랜지스터 | |
US20110309464A1 (en) | Semiconductor device including cell region and peripheral region having high breakdown voltage structure | |
KR101388655B1 (ko) | 반응도 향상을 위해 비대칭 구조를 적용한 전계효과트랜지스터 테라헤르츠 검출기 | |
US9773878B2 (en) | Semiconductor device and manufacturing method thereof | |
KR20150016769A (ko) | 터널링 전계 효과 트렌지스터 및 그의 제조 방법 | |
KR101649441B1 (ko) | 전계효과트랜지스터를 이용한 테라헤르츠 검출기 | |
CN104465656B (zh) | 半导体器件以及其制造方法 | |
WO2016015501A1 (zh) | 隧穿晶体管结构及其制造方法 | |
JP6654196B2 (ja) | 電界効果トランジスタを用いたテラヘルツ検出器 | |
US20120199808A1 (en) | High voltage-resistant lateral double-diffused transistor based on nanowire device | |
JP6388509B2 (ja) | 半導体装置および半導体装置の製造方法 | |
TWI484634B (zh) | 隔離元件及其製造方法 | |
TWI686872B (zh) | 半導體裝置及其製造方法 | |
JP6530672B2 (ja) | マグネティックセンサーを有する半導体素子の製造方法 | |
TW201545345A (zh) | 線型架構之功率半導體元件 | |
JP7244139B2 (ja) | テラヘルツ波を検出するための性能因子が独立的な一体型電界効果トランジスタ-アンテナ融合素子 | |
KR102314944B1 (ko) | 실리콘 링 전계효과트랜지스터 어레이에 의한 활성 안테나 장치 | |
US20150115352A1 (en) | Semiconductor device | |
TWI476923B (zh) | 雙擴散汲極金屬氧化物半導體元件及其製造方法 | |
TWI500139B (zh) | 混和高壓元件及其製造方法 | |
KR101893615B1 (ko) | 반도체 소자 및 그 소자의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180709 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180717 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20181016 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181019 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190219 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190322 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6503093 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |