JP6502494B2 - 電池、及びその充放電方法 - Google Patents
電池、及びその充放電方法 Download PDFInfo
- Publication number
- JP6502494B2 JP6502494B2 JP2017525788A JP2017525788A JP6502494B2 JP 6502494 B2 JP6502494 B2 JP 6502494B2 JP 2017525788 A JP2017525788 A JP 2017525788A JP 2017525788 A JP2017525788 A JP 2017525788A JP 6502494 B2 JP6502494 B2 JP 6502494B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- layer
- charge
- charging
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007599 discharging Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 40
- 229910044991 metal oxide Inorganic materials 0.000 claims description 38
- 150000004706 metal oxides Chemical class 0.000 claims description 38
- 239000012212 insulator Substances 0.000 claims description 9
- 230000001172 regenerating effect Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 318
- 230000004044 response Effects 0.000 description 15
- 230000008859 change Effects 0.000 description 8
- 238000005086 pumping Methods 0.000 description 7
- 230000008929 regeneration Effects 0.000 description 7
- 238000011069 regeneration method Methods 0.000 description 7
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 229910001416 lithium ion Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 230000001443 photoexcitation Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- UNRNJMFGIMDYKL-UHFFFAOYSA-N aluminum copper oxygen(2-) Chemical compound [O-2].[Al+3].[Cu+2] UNRNJMFGIMDYKL-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/36—Accumulators not provided for in groups H01M10/05-H01M10/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
- H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/44—Methods for charging or discharging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/40—Separators; Membranes; Diaphragms; Spacing elements inside cells
- H01M50/409—Separators, membranes or diaphragms characterised by the material
- H01M50/431—Inorganic material
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
- H02J7/35—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering with light sensitive cells
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/38—Energy storage means, e.g. batteries, structurally associated with PV modules
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/04—Construction or manufacture in general
- H01M2010/0495—Nanobatteries
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/14—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from dynamo-electric generators driven at varying speed, e.g. on vehicle
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E70/00—Other energy conversion or management systems reducing GHG emissions
- Y02E70/30—Systems combining energy storage with energy generation of non-fossil origin
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Secondary Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
Description
以下に説明する各実施形態の電池は、量子電池の技術を適用したものである。そこで、各実施形態の説明に先立ち、量子電池について簡単に説明する。
n型金属酸化物半導体層2には、二酸化チタン(TiO2)、酸化スズ(SnO2)又は酸化亜鉛(ZnO)を用いることができる。
充電層3上に形成したp型金属酸化物半導体層4は、上部の第2電極層5からの電子の注入を防止するために設けられている。p型金属酸化物半導体層4の材料としては、酸化ニッケル(NiO)、銅アルミ酸化物(CuAlO2)等が使用可能である。
図1、図2に示すような量子電池において、充電時には、第1電極層6と第2電極層7との間に挟まれた充電層3のみ電子が貯まると考えられていた。すなわち、第2電極層7の直下の領域のみにおいて、充電層3に電池が蓄積されると考えられていた。しかしながら、本件特許出願の発明者らの実験によって、第2電極層7の直下が満たされると、第2電極層7の直下の外側にも電子が沁み出す現象が捉えられた。すなわち、第2電極層7の直下の外側にも電子が沁み出していき、蓄積されることが明らかとなった。
上記のように、充電時には、電極の重複領域から電極の非重複領域に向けて電子が沁み出していく現象が明らかになった。このような沁み出し現象を利用することで、電極層の形状、及び配置の自由度が増し、新たな機能を付加した設計が可能になる。
(D−1)配置例1
次に、電極層の配置例1について、図13〜図15を用いて説明する。図13は、配置例1にかかる量子電池10の構成を示す斜視図である。図14は、量子電池10のパターン配置を模式的に示す平面図である。図15は、パターン配置を模式的に示す断面図である。配置例1では、第1電極層6のパターン16と第2電極層7のパターン17が交差するように配置されている。すなわち、パターン16とパターン17とがクロスメッシュ構造となっている。
電極層の配置例2について、図16〜図18を用いて説明する。図16は、配置例2にかかる量子電池10の構成を示す斜視図である。図17は、配置例2のパターン配置を模式的に示す平面図である。図18は、量子電池10の配置例2を模式的に示す断面図である。配置例2では、第1電極層6のパターン16と第2電極層7のパターン17とが重複するように配置されている。
電極層の配置例3について、図19〜図21を用いて説明する。図19は、配置例3にかかる量子電池10の構成を示す斜視図である。図20は、量子電池10の配置例3を模式的に示す平面図である。図21は、量子電池10の配置例3を模式的に示す断面図である。
上記したように、量子電池10は、変動する電力源による充電に対応することができる充電特性を有している。さらに、量子電池10は、瞬時に大きな起動電力を得ることができる放電特性を有している。このような、充電特性と放電特性を組み合わせた量子電池10は、図22に示すような回生システムに応用可能である。
2 n型金属酸化物半導体層
3 充電層
4 p型金属酸化物半導体層
5 第2電極
6 第1電極層
7 第2電極層
10 量子電池
16 パターン
17 パターン
18 重複領域
19 非重複領域
31 電源
32 モータ
Claims (6)
- 第1電極層と、
第2電極層と、
n型金属酸化物半導体と絶縁体とを含み、前記第1電極層と前記第2電極層との間の充電電圧が印可される充電層と、を備え、
前記第1電極層、及び前記第2電極層のそれぞれが、互いに分離して形成された複数のパターンを備え、
前記充電層を介した平面視において、
前記第1電極層の前記パターンのそれぞれが第1の方向を長手方向としており、
前記第2電極層の前記パターンのそれぞれが第1の方向と交差する第2の方向を長手方向としており、
充電時において、前記複数のパターンのそれぞれに充電電圧が供給され、
放電時において、前記複数のパターンのうちの一部に負荷が接続される電池。 - 前記充電層は、自然エネルギー発電で発生した電力によって充電される請求項1に記載の電池。
- 前記充電層は、モータの回生エネルギーによって充電され、前記充電層に充電された電力は、前記モータの電力源となる請求項1に記載の電池。
- 第1電極層と、
第2電極層と、
n型金属酸化物半導体と絶縁体とを含み、前記第1電極層と前記第2電極層との間の充電電圧が印可される充電層と、を備えた
電池の充放電方法であって、
前記第1電極層、及び前記第2電極層のそれぞれが、互いに分離して形成された複数の電極層パターンを備え、
前記充電層を介した平面視において、
前記第1電極層の複数の前記電極層パターンが第1の方向に沿って形成され、
前記第2電極層の複数の前記電極層パターンが第1の方向と交差する第2の方向に沿って形成され、
前記複数のパターンのそれぞれに充電電圧が供給されることで充電が行われ、
前記複数のパターンのうちの一部に負荷が接続されることで放電が行われる電池の充放電方法。 - 前記充電層は、自然エネルギー発電で発生した電力によって充電される請求項4に記載の充放電方法。
- 前記充電層は、モータの回生エネルギーによって充電され、前記充電層に充電された電力は、前記モータの電力源となる請求項4に記載の充放電方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015133351 | 2015-07-02 | ||
JP2015133351 | 2015-07-02 | ||
PCT/JP2016/001794 WO2017002284A1 (ja) | 2015-07-02 | 2016-03-28 | 電池、及びその充放電方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017002284A1 JPWO2017002284A1 (ja) | 2018-02-22 |
JP6502494B2 true JP6502494B2 (ja) | 2019-04-17 |
Family
ID=57608176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017525788A Expired - Fee Related JP6502494B2 (ja) | 2015-07-02 | 2016-03-28 | 電池、及びその充放電方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20180175293A1 (ja) |
EP (1) | EP3319135B1 (ja) |
JP (1) | JP6502494B2 (ja) |
KR (1) | KR102024484B1 (ja) |
CN (1) | CN107735876B (ja) |
CA (1) | CA2984747C (ja) |
TW (1) | TWI613853B (ja) |
WO (1) | WO2017002284A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017054871A (ja) * | 2015-09-08 | 2017-03-16 | 株式会社日本マイクロニクス | 二次電池、及び二次電池の製造方法 |
TWI672844B (zh) | 2018-12-19 | 2019-09-21 | 財團法人工業技術研究院 | 鋁電池充電方法及鋁電池充電裝置 |
WO2024136923A2 (en) * | 2022-07-18 | 2024-06-27 | Ostendo Technologies, Inc. | Quantum photonic energy storage cell and manufacturing methods thereof |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1140449A (ja) * | 1997-07-23 | 1999-02-12 | Murata Mfg Co Ltd | 積層セラミック電子部品の製造方法、積層セラミック電子部品および積層セラミック電子部品アセンブリ |
JP2005093768A (ja) * | 2003-09-18 | 2005-04-07 | Matsushita Electric Ind Co Ltd | コンデンサアレイ |
EP2078980B1 (en) * | 2006-11-02 | 2019-01-09 | Guala Technology Co., Ltd. | Electric field sensing element and display device making use of the same |
JP4927655B2 (ja) * | 2007-07-20 | 2012-05-09 | 住友重機械工業株式会社 | 昇降圧コンバータ |
JP2011040449A (ja) | 2009-08-07 | 2011-02-24 | Du Pont Mitsui Polychem Co Ltd | ダイシングテープ用基材、ダイシングテープ、半導体装置の製造方法 |
WO2012046325A1 (ja) * | 2010-10-07 | 2012-04-12 | グエラテクノロジー株式会社 | 二次電池 |
WO2013065093A1 (ja) | 2011-10-30 | 2013-05-10 | 株式会社日本マイクロニクス | 繰り返し充放電できる量子電池 |
JP6044049B2 (ja) * | 2012-03-26 | 2016-12-14 | 国立大学法人山梨大学 | 誘電材料、誘電素子、コンデンサ、積層コンデンサ及び蓄電装置 |
WO2013153603A1 (ja) * | 2012-04-09 | 2013-10-17 | 株式会社日本マイクロニクス | 二次電池 |
KR20150029635A (ko) * | 2012-06-06 | 2015-03-18 | 가부시키가이샤 니혼 마이크로닉스 | 고체형 2차 전지의 전극 구조 |
JP2014154223A (ja) * | 2013-02-05 | 2014-08-25 | Ricoh Co Ltd | 二次電池モジュールおよび太陽電池−二次電池一体型給電素子 |
JP6351963B2 (ja) * | 2013-12-10 | 2018-07-04 | 株式会社日本マイクロニクス | 二次電池及びその製造方法 |
KR101877151B1 (ko) * | 2014-03-18 | 2018-07-10 | 가부시키가이샤 니혼 마이크로닉스 | 전지 |
-
2016
- 2016-03-28 WO PCT/JP2016/001794 patent/WO2017002284A1/ja active Application Filing
- 2016-03-28 CA CA2984747A patent/CA2984747C/en active Active
- 2016-03-28 CN CN201680038193.7A patent/CN107735876B/zh not_active Expired - Fee Related
- 2016-03-28 KR KR1020187003273A patent/KR102024484B1/ko active IP Right Grant
- 2016-03-28 US US15/737,737 patent/US20180175293A1/en not_active Abandoned
- 2016-03-28 JP JP2017525788A patent/JP6502494B2/ja not_active Expired - Fee Related
- 2016-03-28 EP EP16817398.7A patent/EP3319135B1/en not_active Not-in-force
- 2016-04-01 TW TW105110539A patent/TWI613853B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI613853B (zh) | 2018-02-01 |
CA2984747A1 (en) | 2017-01-05 |
WO2017002284A1 (ja) | 2017-01-05 |
CN107735876B (zh) | 2020-05-26 |
KR20180025938A (ko) | 2018-03-09 |
EP3319135A4 (en) | 2019-04-10 |
CA2984747C (en) | 2020-06-30 |
EP3319135B1 (en) | 2020-05-06 |
EP3319135A1 (en) | 2018-05-09 |
CN107735876A (zh) | 2018-02-23 |
JPWO2017002284A1 (ja) | 2018-02-22 |
TW201703344A (zh) | 2017-01-16 |
US20180175293A1 (en) | 2018-06-21 |
KR102024484B1 (ko) | 2019-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6152094B2 (ja) | 二次電池 | |
TWI504038B (zh) | Secondary battery | |
JP6502494B2 (ja) | 電池、及びその充放電方法 | |
EP3038166B1 (en) | Secondary cell and method for producing same | |
WO2013161053A1 (ja) | 二次電池 | |
JP6351963B2 (ja) | 二次電池及びその製造方法 | |
KR101877151B1 (ko) | 전지 | |
WO2017043011A1 (ja) | 二次電池、及び二次電池の製造方法 | |
US9515201B2 (en) | Solar cell module including transparent conductive film with uniform thickness | |
US20130182371A1 (en) | Capacitor and method of manufacturing the same | |
JP2021516849A (ja) | 圧電素子および熱電素子を含む円筒形二次電池 | |
KR20220007917A (ko) | 전극 조립체 및 이를 포함하는 이차전지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170908 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181002 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190226 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190320 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6502494 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |