JP6501869B2 - 非対称冷却を有する非対称平面導波路 - Google Patents
非対称冷却を有する非対称平面導波路 Download PDFInfo
- Publication number
- JP6501869B2 JP6501869B2 JP2017508013A JP2017508013A JP6501869B2 JP 6501869 B2 JP6501869 B2 JP 6501869B2 JP 2017508013 A JP2017508013 A JP 2017508013A JP 2017508013 A JP2017508013 A JP 2017508013A JP 6501869 B2 JP6501869 B2 JP 6501869B2
- Authority
- JP
- Japan
- Prior art keywords
- pwg
- cladding layer
- layer
- core layer
- core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001816 cooling Methods 0.000 title description 10
- 239000010410 layer Substances 0.000 claims description 98
- 238000005253 cladding Methods 0.000 claims description 84
- 239000012792 core layer Substances 0.000 claims description 53
- 238000000576 coating method Methods 0.000 claims description 25
- 239000011248 coating agent Substances 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 22
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 230000006870 function Effects 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000003321 amplification Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4298—Coupling light guides with opto-electronic elements coupling with non-coherent light sources and/or radiation detectors, e.g. lamps, incandescent bulbs, scintillation chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0617—Crystal lasers or glass lasers having a varying composition or cross-section in a specific direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
- H01S3/0625—Coatings on surfaces other than the end-faces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08072—Thermal lensing or thermally induced birefringence; Compensation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12159—Interferometer
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (11)
- 光ポンプに結合するための第1端部と、該第1端部の反対側にある第2端部とを有する非対称平面導波路(PWG)であって:
第1クラッド層と;
一方側が前記第1クラッド層に面し、一様にドーピングされたコア層であり、前記第1端部で厚さが小さく前記第2端部で厚さが大きいテーパーが付けられたコア層と;
前記第1クラッド層よりも薄い第2クラッド層であり、前記コア層の前記一方側とは反対の他方側上にコーティングされ、エバネッセント波(e-wave)被覆として機能する材料の一様な層で前記コア層の他方側を被覆することにより形成されている第2クラッド層と;
を有し、
前記コア層の前記一方側はエバネッセント波被覆されず、前記コア層の前記他方側はエバネッセント波被覆されている、
非対称PWG。 - 請求項1に記載されたPWGであって、前記第1クラッド層が、当該PWGの長さに沿ってテーパーが付けられ、前記第1端部での大きな厚さ及び前記第2端部での小さな厚さを有し、前記コア層のテーパーとは実質的に反対のテーパー角度を有し、前記第2クラッド層が当該PWGの長さに沿って一定の厚さを有して当該PWGが長さに沿って一様な全体厚を有するよう形成される、
ことを特徴とするPWG。 - 請求項1に記載されたPWGであって、前記第1クラッド層と前記第2クラッド層とがそれぞれ、当該PWGの長さに沿って一定の厚さを有し、当該PWGが前記コア層のテーパー角度と実質的に同一の全体的テーパー角度を有して長さに沿って全体厚が変化するよう形成される、
ことを特徴とするPWG。 - 請求項1に記載されたPWGを含む光学増幅器。
- 請求項1に記載されたPWGを含むマッハ・ツェンダー干渉計。
- 請求項1に記載されたPWGを含む波長分割マルチプレクサ。
- 請求項1に記載されたPWGを含む大出力レーザーシステム。
- 請求項1に記載されたPWGを含むレーザーダイオード。
- ポンプ光源に結合するための第1端部と、該第1端部の反対側にある第2端部とを有する平面導波路(PWG)であって:
ドーピングされていない第1クラッド層と;
一方側が前記第1クラッド層に面し、一様にドーピングされたコア層であり、前記第1端部で厚さが小さく前記第2端部で厚さが大きいテーパーが付けられ、1つ以上の熱除去冷却器に緊密接触しているコア層と;
前記第1クラッド層よりも薄い第2クラッド層であり、前記コア層の前記一方側とは反対の他方側上にコーティングされ、エバネッセント波(e-wave)被覆として機能する材料の一様な層で前記コア層の他方側を被覆することにより形成されている、第2クラッド層と;
を有し、
前記コア層の前記一方側はエバネッセント波被覆されず、前記コア層の前記他方側はエバネッセント波被覆されている、
非対称PWG。 - 請求項9に記載されたPWGであって、前記第1クラッド層が、当該PWGの長さに沿ってテーパーが付けられ、前記第1端部での大きな厚さ及び前記第2端部での小さな厚さを有し、前記コア層とは実質的に反対のテーパー角度を有して当該PWGが長さに沿って一様な全体厚を有するよう形成される、
ことを特徴とするPWG。 - 請求項10に記載されたPWGであって、前記第1クラッド層と前記第2クラッド層とがそれぞれ、当該PWGの長さに沿って一定の厚さを有し、当該PWGが前記コア層と実質的に同一の全体的テーパー角度を有して長さに沿って全体厚が変化するよう形成される、
ことを特徴とするPWG。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462037505P | 2014-08-14 | 2014-08-14 | |
US62/037,505 | 2014-08-14 | ||
US14/749,398 US9507088B2 (en) | 2014-08-14 | 2015-06-24 | Asymmetric PWG with asymmetric cooling |
US14/749,398 | 2015-06-24 | ||
PCT/US2015/045143 WO2016025765A1 (en) | 2014-08-14 | 2015-08-13 | Asymmetric pwg with asymmetric cooling |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017524265A JP2017524265A (ja) | 2017-08-24 |
JP6501869B2 true JP6501869B2 (ja) | 2019-04-17 |
Family
ID=55302066
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017508013A Expired - Fee Related JP6501869B2 (ja) | 2014-08-14 | 2015-08-13 | 非対称冷却を有する非対称平面導波路 |
JP2017508009A Active JP6431182B2 (ja) | 2014-08-14 | 2015-08-13 | テーパー付きコア厚を有する、端部でポンピングされる平面導波路 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017508009A Active JP6431182B2 (ja) | 2014-08-14 | 2015-08-13 | テーパー付きコア厚を有する、端部でポンピングされる平面導波路 |
Country Status (6)
Country | Link |
---|---|
US (2) | US9726820B2 (ja) |
EP (2) | EP3195427B1 (ja) |
JP (2) | JP6501869B2 (ja) |
CN (2) | CN106575846B (ja) |
IL (2) | IL250444B (ja) |
WO (2) | WO2016025771A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9726820B2 (en) * | 2014-08-14 | 2017-08-08 | Raytheon Company | End pumped PWG with tapered core thickness |
US11114813B2 (en) | 2015-11-25 | 2021-09-07 | Raytheon Company | Integrated pumplight homogenizer and signal injector for high-power laser system |
US10211590B2 (en) | 2015-11-25 | 2019-02-19 | Raytheon Company | Dual-function optical bench and cooling manifold for high-power laser system |
US10297968B2 (en) | 2015-11-25 | 2019-05-21 | Raytheon Company | High-gain single planar waveguide (PWG) amplifier laser system |
US9865988B2 (en) | 2015-11-25 | 2018-01-09 | Raytheon Company | High-power planar waveguide (PWG) pumphead with modular components for high-power laser system |
US10056731B2 (en) | 2015-11-25 | 2018-08-21 | Raytheon Company | Planar waveguide (PWG) amplifier-based laser system with adaptive optic wavefront correction in low-power beam path |
US10069270B2 (en) | 2016-02-11 | 2018-09-04 | Raytheon Company | Planar waveguides with enhanced support and/or cooling features for high-power laser systems |
US10411435B2 (en) | 2016-06-06 | 2019-09-10 | Raytheon Company | Dual-axis adaptive optic (AO) system for high-power lasers |
CN107508121A (zh) * | 2017-08-15 | 2017-12-22 | 中国电子科技集团公司第十研究所 | 一种激光增益介质和装置 |
US10511135B2 (en) | 2017-12-19 | 2019-12-17 | Raytheon Company | Laser system with mechanically-robust monolithic fused planar waveguide (PWG) structure |
CN109962402A (zh) * | 2017-12-25 | 2019-07-02 | 中国建筑材料科学研究总院有限公司 | 一种激光介质和激光器 |
CN108321665A (zh) * | 2018-03-30 | 2018-07-24 | 中国工程物理研究院应用电子学研究所 | 一种抑制板条与冷却器焊接后静态波前畸变的封装结构 |
US11133639B2 (en) | 2018-07-24 | 2021-09-28 | Raytheon Company | Fast axis thermal lens compensation for a planar amplifier structure |
CN109254351B (zh) * | 2018-12-03 | 2020-12-29 | 浙江大学宁波理工学院 | 一种基于单个反对称多模周期波导微腔的上下路滤波器 |
US11808970B2 (en) | 2019-01-02 | 2023-11-07 | Lumentum Operations Llc | Optical fiber with variable absorption |
US11175449B2 (en) * | 2019-01-02 | 2021-11-16 | Lumentum Operations Llc | Optical fiber with variable absorption |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54146640A (en) * | 1978-05-09 | 1979-11-16 | Kokusai Denshin Denwa Co Ltd | Optical source and optical fiber coupling system |
US5846638A (en) | 1988-08-30 | 1998-12-08 | Onyx Optics, Inc. | Composite optical and electro-optical devices |
DK285490D0 (da) * | 1990-11-30 | 1990-11-30 | Nordiske Kabel Traad | Fremgangsmaade og apparat til forstaerkning af et optisk signal |
JPH07281039A (ja) * | 1994-04-06 | 1995-10-27 | Nippon Telegr & Teleph Corp <Ntt> | 増幅作用を有する光導波路 |
JPH10125948A (ja) * | 1996-10-21 | 1998-05-15 | Nippon Telegr & Teleph Corp <Ntt> | 半導体受光素子及びその作製用のマスク |
US6418156B1 (en) | 1998-11-12 | 2002-07-09 | Raytheon Company | Laser with gain medium configured to provide an integrated optical pump cavity |
US6934313B1 (en) | 1999-11-04 | 2005-08-23 | Intel Corporation | Method of making channel-aligned resonator devices |
US6462891B1 (en) | 2000-04-20 | 2002-10-08 | Raytheon Company | Shaping optic for diode light sheets |
ATE286315T1 (de) | 2000-09-29 | 2005-01-15 | Coherent Tech Inc | Leistungsskalierbare wellenleiterverstärker- und laserbauelemente |
US6580850B1 (en) * | 2000-11-24 | 2003-06-17 | Applied Wdm, Inc. | Optical waveguide multimode to single mode transformer |
US6944192B2 (en) * | 2001-03-14 | 2005-09-13 | Corning Incorporated | Planar laser |
JP3976514B2 (ja) * | 2001-04-05 | 2007-09-19 | 日本電気株式会社 | 光導波路の製造方法 |
US6549688B2 (en) * | 2001-07-06 | 2003-04-15 | Redfern Integrated Optics Pty Ltd | Monolithically-integrated optical device and method of forming same |
WO2003077383A1 (fr) * | 2002-03-13 | 2003-09-18 | Nikon Corporation | Dispositif d'amplification lumineuse, son procede de fabrication, source de lumiere mettant ce dispositif en application, dispositif de traitement lumineux utilisant la source de lumiere et dispositif d'exposition utilisant cette source de lumiere |
US6832034B2 (en) * | 2002-06-21 | 2004-12-14 | 3M Innovative Properties Company | Optical waveguide |
JP2004151411A (ja) * | 2002-10-31 | 2004-05-27 | Toshiba Corp | 光結合装置およびその製造方法、映像表示装置 |
JP2004296671A (ja) * | 2003-03-26 | 2004-10-21 | Japan Science & Technology Agency | 固体レーザ装置 |
US7116878B2 (en) * | 2003-04-24 | 2006-10-03 | Mesophotonics Ltd. | Optical waveguide structure |
JP2005055576A (ja) * | 2003-08-01 | 2005-03-03 | Matsushita Electric Ind Co Ltd | 光導波路およびその製造方法 |
US6856737B1 (en) | 2003-08-27 | 2005-02-15 | Mesophotonics Limited | Nonlinear optical device |
CN101437441B (zh) * | 2004-11-17 | 2012-07-04 | 色卡(以色列)有限公司 | 使波导锥形化的方法和工艺以及形成最佳波导结构的方法和工艺 |
US7280571B2 (en) * | 2004-11-23 | 2007-10-09 | Northrop Grumman Corporation | Scalable zig-zag laser amplifier |
US7839908B2 (en) * | 2005-03-30 | 2010-11-23 | Mitsubishi Electric Corporation | Mode control waveguide laser device |
US7787729B2 (en) | 2005-05-20 | 2010-08-31 | Imra America, Inc. | Single mode propagation in fibers and rods with large leakage channels |
US9155905B2 (en) | 2008-01-16 | 2015-10-13 | Morgan Lars Ake Gustavsson | Fluorescent handpiece |
WO2009093431A1 (ja) * | 2008-01-23 | 2009-07-30 | Panasonic Corporation | 波長変換レーザ及び画像表示装置 |
JP2012500469A (ja) * | 2008-08-15 | 2012-01-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 導波路レーザー |
US9285541B2 (en) | 2008-08-21 | 2016-03-15 | Nlight Photonics Corporation | UV-green converting fiber laser using active tapers |
US8111724B2 (en) | 2009-07-07 | 2012-02-07 | International Business Machines Corporation | Temperature control device for optoelectronic devices |
US8977097B2 (en) | 2010-02-17 | 2015-03-10 | Raytheon Company | Glass core planar waveguide laser amplifier |
US8027555B1 (en) | 2010-06-30 | 2011-09-27 | Jds Uniphase Corporation | Scalable cladding mode stripper device |
US9388086B2 (en) | 2011-03-04 | 2016-07-12 | Raytheon Company | Method of fabricating optical ceramics containing compositionally tailored regions in three dimension |
JP2014134558A (ja) * | 2011-04-22 | 2014-07-24 | Fujikura Ltd | 光出射用エンドキャップの製造方法 |
KR20140030210A (ko) | 2011-06-13 | 2014-03-11 | 로렌스 리버모어 내쇼날 시큐리티, 엘엘시 | 극저온 냉각 레이저 증폭기 시스템 및 방법 |
US20130044779A1 (en) * | 2011-08-16 | 2013-02-21 | Raytheon Company | Method for tailoring the dopant profile in a laser crystal using zone processing |
US9535211B2 (en) * | 2011-12-01 | 2017-01-03 | Raytheon Company | Method and apparatus for fiber delivery of high power laser beams |
DE102012102306B4 (de) * | 2012-03-19 | 2021-05-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserdiodenvorrichtung |
JP2014081586A (ja) | 2012-10-18 | 2014-05-08 | International Business Maschines Corporation | アディアバティック結合を実現させる、シングルモード・ポリマー導波路(PWG)アレイと、シリコン導波路(SiWG)アレイとの整列。 |
WO2014075088A1 (en) | 2012-11-12 | 2014-05-15 | Demaray Llc | Adiabatic planar waveguide coupler transformer |
US9030732B2 (en) | 2013-03-12 | 2015-05-12 | Raytheon Company | Suppression of amplified spontaneous emission (ASE) within laser planar waveguide devices |
JP6175263B2 (ja) * | 2013-03-28 | 2017-08-02 | 富士通株式会社 | スポットサイズ変換器、その製造方法及び光集積回路装置 |
US9726820B2 (en) * | 2014-08-14 | 2017-08-08 | Raytheon Company | End pumped PWG with tapered core thickness |
-
2015
- 2015-04-09 US US14/682,539 patent/US9726820B2/en active Active
- 2015-06-24 US US14/749,398 patent/US9507088B2/en active Active
- 2015-08-13 JP JP2017508013A patent/JP6501869B2/ja not_active Expired - Fee Related
- 2015-08-13 WO PCT/US2015/045151 patent/WO2016025771A1/en active Application Filing
- 2015-08-13 EP EP15754378.6A patent/EP3195427B1/en active Active
- 2015-08-13 JP JP2017508009A patent/JP6431182B2/ja active Active
- 2015-08-13 CN CN201580043592.8A patent/CN106575846B/zh active Active
- 2015-08-13 EP EP15754095.6A patent/EP3192134A1/en not_active Withdrawn
- 2015-08-13 WO PCT/US2015/045143 patent/WO2016025765A1/en active Application Filing
- 2015-08-13 CN CN201580043612.1A patent/CN106575847B/zh not_active Expired - Fee Related
-
2017
- 2017-02-05 IL IL250444A patent/IL250444B/en active IP Right Grant
- 2017-02-08 IL IL250505A patent/IL250505B/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN106575846A (zh) | 2017-04-19 |
CN106575847B (zh) | 2020-08-25 |
JP6431182B2 (ja) | 2018-11-28 |
EP3195427A1 (en) | 2017-07-26 |
WO2016025765A1 (en) | 2016-02-18 |
IL250444A0 (en) | 2017-03-30 |
CN106575847A (zh) | 2017-04-19 |
JP2017524265A (ja) | 2017-08-24 |
IL250505A0 (en) | 2017-03-30 |
EP3192134A1 (en) | 2017-07-19 |
IL250444B (en) | 2020-10-29 |
US9726820B2 (en) | 2017-08-08 |
WO2016025771A1 (en) | 2016-02-18 |
EP3195427B1 (en) | 2021-04-21 |
CN106575846B (zh) | 2020-09-04 |
US20160047982A1 (en) | 2016-02-18 |
US9507088B2 (en) | 2016-11-29 |
US20160047981A1 (en) | 2016-02-18 |
IL250505B (en) | 2020-10-29 |
JP2017524264A (ja) | 2017-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6501869B2 (ja) | 非対称冷却を有する非対称平面導波路 | |
US6785304B2 (en) | Waveguide device with mode control and pump light confinement and method of using same | |
JP5135207B2 (ja) | チューブ固体レーザ | |
JP3803262B2 (ja) | 光増幅器 | |
US7839908B2 (en) | Mode control waveguide laser device | |
US6094297A (en) | End pumped zig-zag slab laser gain medium | |
US20030138021A1 (en) | Diode-pumped solid-state thin slab laser | |
Sridharan et al. | Zigzag slabs for solid-state laser amplifiers: batch fabrication and parasitic oscillation suppression | |
WO2005114800A1 (en) | Zig-zag laser amplifier with polarization controlled reflectors | |
US7388895B2 (en) | Corner-pumping method and gain module for high power slab laser | |
AU730093B2 (en) | Thermally improved slab laser pump cavity apparatus with integral concentrator | |
WO2005091447A1 (ja) | レーザー装置 | |
US20020101893A1 (en) | High gain laser amplifier | |
JP2000133863A (ja) | 固体レーザ装置 | |
JP2006526283A (ja) | レーザーのポンピング方法とレーザー装置 | |
JP6010892B2 (ja) | 平面導波路型レーザ装置 | |
JP2022189265A (ja) | レーザ増幅媒体およびレーザ増幅媒体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170412 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180326 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180403 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180612 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20181009 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181204 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20181211 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190219 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190319 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6501869 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |