JP6495322B2 - Ｉｃダイ、超音波プローブ、超音波診断システム及び方法 - Google Patents

Ｉｃダイ、超音波プローブ、超音波診断システム及び方法 Download PDF

Info

Publication number
JP6495322B2
JP6495322B2 JP2016559408A JP2016559408A JP6495322B2 JP 6495322 B2 JP6495322 B2 JP 6495322B2 JP 2016559408 A JP2016559408 A JP 2016559408A JP 2016559408 A JP2016559408 A JP 2016559408A JP 6495322 B2 JP6495322 B2 JP 6495322B2
Authority
JP
Japan
Prior art keywords
die
conductive
conductive contact
edge
contact plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2016559408A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017514556A (ja
JP2017514556A5 (https=
Inventor
エグベルトゥス レイニエル ヤコブス
エグベルトゥス レイニエル ヤコブス
ヨハネス ウィルヘルムス ウィーカンプ
ヨハネス ウィルヘルムス ウィーカンプ
ニールス コーネリス ウィルヘルムス ヨハネス レイケルス
ニールス コーネリス ウィルヘルムス ヨハネス レイケルス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Publication of JP2017514556A publication Critical patent/JP2017514556A/ja
Publication of JP2017514556A5 publication Critical patent/JP2017514556A5/ja
Application granted granted Critical
Publication of JP6495322B2 publication Critical patent/JP6495322B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/483—Interconnections over air gaps, e.g. air bridges
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/12—Diagnosis using ultrasonic, sonic or infrasonic waves in body cavities or body tracts, e.g. by using catheters
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
    • A61B8/4444—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device related to the probe
    • A61B8/445—Details of catheter construction
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
    • A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
    • A61B8/4494—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer characterised by the arrangement of the transducer elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002—Electrostatic motors
    • H02N1/006—Electrostatic motors of the gap-closing type
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/161—Containers comprising no base
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10151—Sensor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01938—Manufacture or treatment of bond pads using blanket deposition in gaseous form, e.g. by CVD or PVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H10W72/9445—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/953—Materials of bond pads not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Medical Informatics (AREA)
  • Surgery (AREA)
  • Pathology (AREA)
  • Radiology & Medical Imaging (AREA)
  • Biophysics (AREA)
  • Biomedical Technology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Gynecology & Obstetrics (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Manufacturing & Machinery (AREA)
  • Transducers For Ultrasonic Waves (AREA)
JP2016559408A 2014-03-31 2015-03-31 Ｉｃダイ、超音波プローブ、超音波診断システム及び方法 Expired - Fee Related JP6495322B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14162615 2014-03-31
EP14162615.0 2014-03-31
PCT/EP2015/057030 WO2015150385A2 (en) 2014-03-31 2015-03-31 Ic die, ultrasound probe, ultrasonic diagnostic system and method

Publications (3)

Publication Number Publication Date
JP2017514556A JP2017514556A (ja) 2017-06-08
JP2017514556A5 JP2017514556A5 (https=) 2018-05-17
JP6495322B2 true JP6495322B2 (ja) 2019-04-03

Family

ID=50439183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016559408A Expired - Fee Related JP6495322B2 (ja) 2014-03-31 2015-03-31 Ｉｃダイ、超音波プローブ、超音波診断システム及び方法

Country Status (4)

Country Link
US (1) US10586753B2 (https=)
EP (1) EP3126065B1 (https=)
JP (1) JP6495322B2 (https=)
WO (1) WO2015150385A2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018065254A1 (en) * 2016-10-03 2018-04-12 Koninklijke Philips N.V. Intraluminal imaging devices with a reduced number of signal channels
JP7065837B6 (ja) * 2016-10-03 2022-06-06 コーニンクレッカ フィリップス エヌ ヴェ 心腔内心エコー検査用インターポーザ
US11864947B2 (en) * 2016-12-22 2024-01-09 Koninklijke Philips N.V. Systems and methods of operation of capacitive radio frequency micro-electromechanical switches
US11109909B1 (en) * 2017-06-26 2021-09-07 Andreas Hadjicostis Image guided intravascular therapy catheter utilizing a thin ablation electrode
CN107172812B (zh) * 2017-07-13 2023-08-11 杭州士兰微电子股份有限公司 超声波传感器组件及制造方法
CN109472182B (zh) * 2017-09-08 2020-09-22 茂丞科技(深圳)有限公司 晶圆级超声波芯片规模制造及封装方法
JP7168662B2 (ja) * 2017-10-31 2022-11-09 コーニンクレッカ フィリップス エヌ ヴェ 超音波スキャナアセンブリ
US12005159B2 (en) 2019-11-07 2024-06-11 Cornell University Conformal, non-occluding sensor array for cardiac mapping and ablation
US11304659B2 (en) 2020-03-20 2022-04-19 Xenter, Inc. Operatively coupled data and power transfer device for medical guidewires and catheters with sensors
WO2021217066A2 (en) * 2020-04-24 2021-10-28 Cornell University Catheter-deployable soft robotic sensor arrays and processing of flexible circuits
IT202300014343A1 (it) * 2023-07-10 2025-01-10 St Microelectronics Int Nv Dispositivo trasduttore ultrasonico microlavorato ad elevato fattore di merito

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3747202A (en) 1971-11-22 1973-07-24 Honeywell Inf Systems Method of making beam leads on substrates
WO1990015438A1 (en) * 1989-06-08 1990-12-13 Unistructure, Inc. Beam lead and semiconductor device structure and method for fabricating integrated structure
US6283919B1 (en) 1996-11-26 2001-09-04 Atl Ultrasound Ultrasonic diagnostic imaging with blended tissue harmonic signals
US6458083B1 (en) 1996-11-26 2002-10-01 Koninklijke Philips Electronics N.V. Ultrasonic harmonic imaging with adaptive image formation
EP0901164A2 (en) * 1997-09-05 1999-03-10 Lsi Logic Corporation Integrated circuit packaging method, packaging apparatus, and package
US6013032A (en) 1998-03-13 2000-01-11 Hewlett-Packard Company Beamforming methods and apparatus for three-dimensional ultrasound imaging using two-dimensional transducer array
US5997479A (en) 1998-05-28 1999-12-07 Hewlett-Packard Company Phased array acoustic systems with intra-group processors
JP4651153B2 (ja) * 1999-10-28 2011-03-16 ローム株式会社 半導体装置
FR2801971B1 (fr) * 1999-12-07 2002-02-15 St Microelectronics Sa Emetteur et recepteur acoustiques integres, et procede de fabrication correspondant
US6530885B1 (en) 2000-03-17 2003-03-11 Atl Ultrasound, Inc. Spatially compounded three dimensional ultrasonic images
US6443896B1 (en) 2000-08-17 2002-09-03 Koninklijke Philips Electronics N.V. Method for creating multiplanar ultrasonic images of a three dimensional object
US6468216B1 (en) 2000-08-24 2002-10-22 Kininklijke Philips Electronics N.V. Ultrasonic diagnostic imaging of the coronary arteries
WO2004073101A2 (en) * 2003-02-11 2004-08-26 Oplink Communications, Inc. Suspended and truncated coplanar waveguide
WO2005089348A2 (en) 2004-03-15 2005-09-29 Georgia Tech Research Corporation Packaging for micro electro-mechanical systems and methods of fabricating thereof
US7545075B2 (en) * 2004-06-04 2009-06-09 The Board Of Trustees Of The Leland Stanford Junior University Capacitive micromachined ultrasonic transducer array with through-substrate electrical connection and method of fabricating same
US8658453B2 (en) * 2004-09-15 2014-02-25 Sonetics Ultrasound, Inc. Capacitive micromachined ultrasonic transducer
US20070299345A1 (en) * 2004-10-27 2007-12-27 Hideo Adachi Capacitive Ultrasonic Transducer and Endo Cavity Ultrasonic Diagnosis System Using the Same
EP1883956A4 (en) 2005-05-18 2011-03-23 Kolo Technologies Inc BY-THE-WAFER CONNECTION
JP2006332799A (ja) * 2005-05-23 2006-12-07 Matsushita Electric Works Ltd 音響センサ
FR2903811B1 (fr) * 2006-07-12 2008-08-29 Commissariat Energie Atomique Dispositif electronique comprenant des composants electroniques relies a un substrat et mutuellement connectes et procede de fabrication d'un tel dispositif
WO2009073753A1 (en) * 2007-12-03 2009-06-11 Kolo Technologies, Inc. Cmut packaging for ultrasound system
JP5611830B2 (ja) * 2007-12-03 2014-10-22 コロ テクノロジーズ インコーポレイテッド 静電型変換器アレイのパッケージングおよび接続
WO2009139400A1 (ja) * 2008-05-15 2009-11-19 株式会社 日立メディコ 超音波探触子及びその製造方法並びに超音波診断装置
US20120092294A1 (en) 2010-10-18 2012-04-19 Qualcomm Mems Technologies, Inc. Combination touch, handwriting and fingerprint sensor
IN2014CN02550A (https=) 2011-10-17 2015-08-07 Koninkl Philips Nv
JP2013226390A (ja) * 2012-03-31 2013-11-07 Canon Inc 探触子、及びそれを用いた被検体情報取得装置

Also Published As

Publication number Publication date
JP2017514556A (ja) 2017-06-08
US20170136496A1 (en) 2017-05-18
EP3126065A2 (en) 2017-02-08
EP3126065B1 (en) 2021-05-19
WO2015150385A2 (en) 2015-10-08
WO2015150385A3 (en) 2016-05-19
US10586753B2 (en) 2020-03-10

Similar Documents

Publication Publication Date Title
JP6495322B2 (ja) Ｉｃダイ、超音波プローブ、超音波診断システム及び方法
JP6878546B2 (ja) 同軸ワイヤアセンブリ
JP7227318B2 (ja) Ｉｃダイ、プローブ、及び超音波システム
JP6495338B2 (ja) 超音波トランスデューサチップアセンブリ、超音波プローブ、超音波イメージングシステム並びに超音波アセンブリ及びプローブ製造方法
JP6767474B2 (ja) 増加される寿命を備える容量性マイクロマシン超音波トランスデューサ
CN106999163A (zh) 具有交错列的微加工超声换能器的导管换能器
CN105640590B (zh) 超声探头和制造超声探头的方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180329

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180329

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20181210

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190205

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190306

R150 Certificate of patent or registration of utility model

Ref document number: 6495322

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees