JP6494263B2 - 撮像素子及び電子機器 - Google Patents

撮像素子及び電子機器 Download PDF

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Publication number
JP6494263B2
JP6494263B2 JP2014240368A JP2014240368A JP6494263B2 JP 6494263 B2 JP6494263 B2 JP 6494263B2 JP 2014240368 A JP2014240368 A JP 2014240368A JP 2014240368 A JP2014240368 A JP 2014240368A JP 6494263 B2 JP6494263 B2 JP 6494263B2
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Japan
Prior art keywords
semiconductor chip
signal
column
photoelectric conversion
circuit
Prior art date
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Expired - Fee Related
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JP2014240368A
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English (en)
Japanese (ja)
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JP2015173252A5 (OSRAM
JP2015173252A (ja
Inventor
俊行 ▲高▼田
俊行 ▲高▼田
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Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014240368A priority Critical patent/JP6494263B2/ja
Priority to US14/625,238 priority patent/US9627428B2/en
Publication of JP2015173252A publication Critical patent/JP2015173252A/ja
Publication of JP2015173252A5 publication Critical patent/JP2015173252A5/ja
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Publication of JP6494263B2 publication Critical patent/JP6494263B2/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/809Constructional details of image sensors of hybrid image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014240368A 2014-02-19 2014-11-27 撮像素子及び電子機器 Expired - Fee Related JP6494263B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014240368A JP6494263B2 (ja) 2014-02-19 2014-11-27 撮像素子及び電子機器
US14/625,238 US9627428B2 (en) 2014-02-19 2015-02-18 Image sensor and electronic device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014029963 2014-02-19
JP2014029963 2014-02-19
JP2014240368A JP6494263B2 (ja) 2014-02-19 2014-11-27 撮像素子及び電子機器

Publications (3)

Publication Number Publication Date
JP2015173252A JP2015173252A (ja) 2015-10-01
JP2015173252A5 JP2015173252A5 (OSRAM) 2017-12-28
JP6494263B2 true JP6494263B2 (ja) 2019-04-03

Family

ID=53798807

Family Applications (1)

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JP2014240368A Expired - Fee Related JP6494263B2 (ja) 2014-02-19 2014-11-27 撮像素子及び電子機器

Country Status (2)

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US (1) US9627428B2 (OSRAM)
JP (1) JP6494263B2 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113099139B (zh) * 2015-09-30 2024-06-21 株式会社尼康 摄像元件及电子相机
KR102324224B1 (ko) 2017-06-28 2021-11-10 삼성전자주식회사 이미지 센서 및 그것에 포함되는 전자 회로

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200300291A (en) * 2001-11-05 2003-05-16 Mitsumasa Koyanagi Solid-state image sensor and its production method
FR2888989B1 (fr) * 2005-07-21 2008-06-06 St Microelectronics Sa Capteur d'images
US8049256B2 (en) * 2006-10-05 2011-11-01 Omnivision Technologies, Inc. Active pixel sensor having a sensor wafer connected to a support circuit wafer
KR100825808B1 (ko) 2007-02-26 2008-04-29 삼성전자주식회사 후면 조명 구조의 이미지 센서 및 그 이미지 센서 제조방법
JP2008235478A (ja) * 2007-03-19 2008-10-02 Nikon Corp 撮像素子
JP5223343B2 (ja) 2008-01-10 2013-06-26 株式会社ニコン 固体撮像素子
JP4941490B2 (ja) 2009-03-24 2012-05-30 ソニー株式会社 固体撮像装置、及び電子機器
CN102668081B (zh) * 2009-12-26 2016-02-03 佳能株式会社 固态图像拾取装置和图像拾取系统
JP5570377B2 (ja) * 2010-09-30 2014-08-13 キヤノン株式会社 固体撮像装置
JP5881324B2 (ja) * 2011-07-01 2016-03-09 オリンパス株式会社 固体撮像装置、固体撮像装置の制御方法、および撮像装置
US9607971B2 (en) * 2012-06-04 2017-03-28 Sony Corporation Semiconductor device and sensing system
CN104737290B (zh) * 2012-10-26 2017-09-19 奥林巴斯株式会社 固体摄像装置、摄像装置以及信号读出方法

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Publication number Publication date
US20150236063A1 (en) 2015-08-20
US9627428B2 (en) 2017-04-18
JP2015173252A (ja) 2015-10-01

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