JP6463944B2 - 撮像素子、撮像装置及び携帯電話機 - Google Patents
撮像素子、撮像装置及び携帯電話機 Download PDFInfo
- Publication number
- JP6463944B2 JP6463944B2 JP2014217663A JP2014217663A JP6463944B2 JP 6463944 B2 JP6463944 B2 JP 6463944B2 JP 2014217663 A JP2014217663 A JP 2014217663A JP 2014217663 A JP2014217663 A JP 2014217663A JP 6463944 B2 JP6463944 B2 JP 6463944B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- semiconductor
- output lines
- imaging device
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003384 imaging method Methods 0.000 title claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 70
- 238000012545 processing Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 20
- 230000015654 memory Effects 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000010030 laminating Methods 0.000 claims 1
- 238000004891 communication Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000011514 reflex Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 5
- 240000004050 Pentaglottis sempervirens Species 0.000 description 4
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001454 recorded image Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/74—Circuitry for scanning or addressing the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/767—Horizontal readout lines, multiplexers or registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/779—Circuitry for scanning or addressing the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
図1を参照して、本発明の第1の実施形態について説明する。図1は、本発明の第1の実施形態における撮像素子の概略構成を説明する。なお、本発明の撮像素子は、デジタルカメラ、デジタルビデオカメラなどに代表される様々な撮像装置に用いることができる。
以下、本発明の第2の実施形態における撮像素子について説明する。本第2の実施形態では、垂直出力線(列出力線)を垂直方向(列方向)に4分割し、各々の端部を第二の半導体への接続ポイントとする撮像素子について説明する。
図6は、本発明の第3の実施形態として、携帯電話機300の構成を示すブロック図である。第3の実施形態の携帯電話機300は、音声通話機能の他、電子メール機能や、インターネット接続機能、画像の撮影、再生機能等を有する。
Claims (10)
- 2次元に配置された複数の画素と、列方向に複数に分割され、前記複数の画素から画素信号を前記列方向に読み出す複数の出力線とを有する第一の半導体基板と、
前記複数の出力線にそれぞれ対応する、前記読み出された画素信号を処理する複数の信号処理手段と、前記信号処理手段から出力された信号を外部に出力する読み出し手段とを有する第二の半導体基板とを有し、
前記第一の半導体基板と前記第二の半導体基板とを積層させ、前記複数の出力線と対応する前記複数の信号処理手段とをそれぞれ接続し、
前記読み出し手段は、前記信号処理手段から出力された信号を、前記第二の半導体基板の外部に出力し、
前記出力線の分割数は、前記信号処理手段の回路面積から求められた各列に配置可能な数であることを特徴とする撮像素子。 - 前記第一の半導体基板と前記第二の半導体基板が重なる面積が最大となるように積層させたことを特徴とする請求項1に記載の撮像素子。
- 前記第一の半導体基板と前記第二の半導体基板が、同じ外形を有することを特徴とする請求項1または2に記載の撮像素子。
- 前記複数の信号処理手段は、それぞれ、アンプとA/D変換回路の少なくともいずれかを含むことを特徴とする請求項1乃至3のいずれか1項に記載の撮像素子。
- 前記第二の半導体基板は、前記複数の出力線をそれぞれ駆動するための複数の駆動手段を更に有することを特徴とする請求項1乃至4のいずれか1項に記載の撮像素子。
- 前記信号処理手段は、メモリを含むことを特徴とする請求項1乃至5のいずれか1項に記載の撮像素子。
- 前記複数の画素は、列ごとに、前記出力線と同じ分割数のグループに分割され、各グループの画素は、各出力線に接続されていることを特徴とする請求項1乃至6のいずれか1項に記載の撮像素子。
- 前記第一の半導体基板は、前記各グループの画素を制御するための、前記出力線の分割数と同数の走査部を更に有することを特徴とする請求項7に記載の撮像素子。
- 請求項1乃至8のいずれか1項に記載の撮像素子を有することを特徴とする撮像装置。
- 請求項1乃至8のいずれか1項に記載の撮像素子を有することを特徴とする携帯電話機。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014217663A JP6463944B2 (ja) | 2013-11-25 | 2014-10-24 | 撮像素子、撮像装置及び携帯電話機 |
KR1020140160548A KR101782334B1 (ko) | 2013-11-25 | 2014-11-18 | 촬상 소자, 촬상장치 및 휴대전화기 |
US14/550,205 US9621830B2 (en) | 2013-11-25 | 2014-11-21 | Image sensor, image capturing apparatus, and cellular phone |
CN201410688165.2A CN104660927B (zh) | 2013-11-25 | 2014-11-25 | 图像传感器、摄像装置及蜂窝电话 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013243346 | 2013-11-25 | ||
JP2013243346 | 2013-11-25 | ||
JP2014217663A JP6463944B2 (ja) | 2013-11-25 | 2014-10-24 | 撮像素子、撮像装置及び携帯電話機 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015122730A JP2015122730A (ja) | 2015-07-02 |
JP6463944B2 true JP6463944B2 (ja) | 2019-02-06 |
Family
ID=53533972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014217663A Active JP6463944B2 (ja) | 2013-11-25 | 2014-10-24 | 撮像素子、撮像装置及び携帯電話機 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9621830B2 (ja) |
JP (1) | JP6463944B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6579771B2 (ja) * | 2015-03-26 | 2019-09-25 | キヤノン株式会社 | 撮像装置 |
JP2017183658A (ja) * | 2016-03-31 | 2017-10-05 | ソニー株式会社 | 固体撮像素子、撮像装置、および電子機器 |
JP6553011B2 (ja) * | 2016-10-14 | 2019-07-31 | Ckd株式会社 | 三次元計測装置 |
JP6991815B2 (ja) * | 2017-09-29 | 2022-01-13 | キヤノン株式会社 | 撮像装置、撮像システム、移動体 |
JP6991816B2 (ja) * | 2017-09-29 | 2022-01-13 | キヤノン株式会社 | 半導体装置および機器 |
JP7286309B2 (ja) * | 2018-12-18 | 2023-06-05 | キヤノン株式会社 | 光電変換装置、光電変換システムおよび信号処理装置 |
US10819936B2 (en) * | 2019-02-13 | 2020-10-27 | Omnivision Technologies, Inc. | Bias circuit for use with divided bit lines |
US11457166B1 (en) | 2021-03-05 | 2022-09-27 | Semiconductor Components Industries, Llc | Methods and apparatus for an image sensor |
CN117897966A (zh) * | 2021-08-25 | 2024-04-16 | 株式会社尼康 | 摄像元件及摄像装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0548460A (ja) | 1991-06-05 | 1993-02-26 | Matsushita Electric Ind Co Ltd | A/d変換器とこれを用いたセンサ及び3次元集積回路 |
JP2010098516A (ja) * | 2008-10-16 | 2010-04-30 | Sony Corp | 撮像素子およびその制御方法並びにカメラ |
JP5685898B2 (ja) | 2010-01-08 | 2015-03-18 | ソニー株式会社 | 半導体装置、固体撮像装置、およびカメラシステム |
FR2958079B1 (fr) * | 2010-03-26 | 2012-09-21 | Commissariat Energie Atomique | Dispositif imageur cmos a architecture en trois dimensions |
JP2012094720A (ja) * | 2010-10-27 | 2012-05-17 | Sony Corp | 固体撮像装置、半導体装置、固体撮像装置の製造方法、半導体装置の製造方法、及び電子機器 |
JP5633323B2 (ja) * | 2010-11-11 | 2014-12-03 | ソニー株式会社 | 固体撮像装置及び電子機器 |
EP2708021B1 (en) * | 2011-05-12 | 2019-07-10 | DePuy Synthes Products, Inc. | Image sensor with tolerance optimizing interconnects |
JP5820620B2 (ja) * | 2011-05-25 | 2015-11-24 | オリンパス株式会社 | 固体撮像装置、撮像装置、および信号読み出し方法 |
JP2013090127A (ja) * | 2011-10-18 | 2013-05-13 | Olympus Corp | 固体撮像装置および撮像装置 |
US9350928B2 (en) * | 2012-05-02 | 2016-05-24 | Semiconductor Components Industries, Llc | Image data compression using stacked-chip image sensors |
TWI583195B (zh) * | 2012-07-06 | 2017-05-11 | 新力股份有限公司 | A solid-state imaging device and a solid-state imaging device, and an electronic device |
-
2014
- 2014-10-24 JP JP2014217663A patent/JP6463944B2/ja active Active
- 2014-11-21 US US14/550,205 patent/US9621830B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2015122730A (ja) | 2015-07-02 |
US20160156861A1 (en) | 2016-06-02 |
US9621830B2 (en) | 2017-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6463944B2 (ja) | 撮像素子、撮像装置及び携帯電話機 | |
JP6320272B2 (ja) | 撮像素子、撮像装置及び携帯電話機 | |
JP4979893B2 (ja) | 物理量分布検知装置並びに物理情報取得方法および物理情報取得装置 | |
JP5965674B2 (ja) | 固体撮像装置および撮像装置 | |
JP5026951B2 (ja) | 撮像素子の駆動装置、撮像素子の駆動方法、撮像装置、及び撮像素子 | |
JP2013090127A (ja) | 固体撮像装置および撮像装置 | |
JP2014036306A (ja) | 固体撮像装置および撮像装置 | |
JP2012257095A (ja) | 固体撮像装置、撮像装置、および信号読み出し方法 | |
JP6413401B2 (ja) | 固体撮像素子 | |
JP6413233B2 (ja) | 撮像装置および撮像素子 | |
JP6802642B2 (ja) | 撮像装置およびその制御方法、プログラム、並びに記憶媒体 | |
JP6532213B2 (ja) | 撮像素子、撮像装置及び携帯電話機 | |
KR101782334B1 (ko) | 촬상 소자, 촬상장치 및 휴대전화기 | |
JP2013026713A (ja) | 固体撮像装置、撮像装置、および信号読み出し方法 | |
JP6494263B2 (ja) | 撮像素子及び電子機器 | |
JP6825675B2 (ja) | 撮像素子及び撮像装置 | |
JP2015111761A (ja) | 電子機器 | |
JP2018174592A (ja) | 電子機器 | |
JP2015100004A (ja) | 固体撮像素子及び撮像装置 | |
JP6458114B2 (ja) | 撮像素子、撮像装置及び携帯電話機 | |
JP2018133600A (ja) | 撮像装置、撮像装置の制御方法、およびプログラム | |
JP7160129B2 (ja) | 撮像素子および撮像装置 | |
JP6916418B2 (ja) | 撮像装置 | |
JP2020167572A (ja) | 撮像装置 | |
JP2018152869A (ja) | 撮像素子および撮像装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171017 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180803 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180810 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181003 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181207 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190107 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6463944 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |