JP6492125B2 - 単一分子を検出する方法 - Google Patents
単一分子を検出する方法 Download PDFInfo
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- JP6492125B2 JP6492125B2 JP2017128437A JP2017128437A JP6492125B2 JP 6492125 B2 JP6492125 B2 JP 6492125B2 JP 2017128437 A JP2017128437 A JP 2017128437A JP 2017128437 A JP2017128437 A JP 2017128437A JP 6492125 B2 JP6492125 B2 JP 6492125B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 194
- 239000002041 carbon nanotube Substances 0.000 claims description 147
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 147
- 239000000758 substrate Substances 0.000 claims description 86
- 239000002131 composite material Substances 0.000 claims description 71
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 37
- 239000011148 porous material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 56
- 239000002238 carbon nanotube film Substances 0.000 description 37
- 239000011241 protective layer Substances 0.000 description 31
- 238000004557 single molecule detection Methods 0.000 description 31
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 description 28
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 239000003960 organic solvent Substances 0.000 description 16
- 238000001069 Raman spectroscopy Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910052755 nonmetal Inorganic materials 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000002079 double walled nanotube Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 102220588439 Keratin, type I cytoskeletal 18_S10A_mutation Human genes 0.000 description 1
- 102220588441 Keratin, type I cytoskeletal 18_S30A_mutation Human genes 0.000 description 1
- 102220477667 Mitochondrial inner membrane protease subunit 2_S40T_mutation Human genes 0.000 description 1
- 102220470087 Ribonucleoside-diphosphate reductase subunit M2_S20A_mutation Human genes 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- VYXSBFYARXAAKO-WTKGSRSZSA-N chembl402140 Chemical compound Cl.C1=2C=C(C)C(NCC)=CC=2OC2=C\C(=N/CC)C(C)=CC2=C1C1=CC=CC=C1C(=O)OCC VYXSBFYARXAAKO-WTKGSRSZSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/44—Raman spectrometry; Scattering spectrometry ; Fluorescence spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Description
S10、基板12を提供する。
S20、複数の第一孔116を有するカーボンナノチューブ複合構造体110を提供する。
S30、基板12の第一表面121にカーボンナノチューブ複合構造体110を設置し、基板12の第一表面121の一部を露出させる。
S40、カーボンナノチューブ複合構造体110をマスクとして、第一表面121をドライエッチングして、第一表面121にパターン化突起122を形成し、パターン化突起122は互いに交差している複数の帯状突起を含む。
S50、カーボンナノチューブ複合構造体110を除去する。
S60、パターン化突起122の表面に金属層14を形成する。
S1、キャリア10を提供し、キャリア10は基板12及び基板12に設置される金属層14を含み、基板12はベース120及びベース120の表面に設置されるパターン化突起122を含み、パターン化突起122は複数の帯状突起を含み、複数の帯状突起は互いに交差してネット構造体を形成し、複数の穴124を定義する。
S2、基板12と離れる金属層14の表面に、単一分子試料16を設置する。
S3、検出器で単一分子試料16を検出する。
S21、単一分子試料16の溶液を提供する。
S22、金属層14が設置されたキャリア10を単一分子試料16の溶液に浸漬する。
S23、キャリア10を単一分子試料16の溶液から取り出す。
S10A、基板12の第一表面121にカーボンナノチューブ複合構造体110を設置し、基板12の第一表面121の一部を露出させる。
S20A、カーボンナノチューブ複合構造体110をマスクとして、第一表面121をエッチングして、第一表面121にパターン化突起122を形成し、パターン化突起122は互いに交差している複数の帯状突起を含む。
S30A、パターン化突起122の表面に金属層14を堆積し、金属層14はパターン化突起122及びカーボンナノチューブ複合構造体110を完全に被覆する。
S40A、カーボンナノチューブ複合構造体110を除去する。
110 カーボンナノチューブ複合構造体
112 カーボンナノチューブ構造体
114 保護層
116 第一孔
12 基板
120 ベース
121 第一表面
122 パターン化突起
124 穴
14 金属層
16 単一分子試料
18 入射光
Claims (2)
- 基板を提供する第一サブステップと、
複数の第一孔を有するカーボンナノチューブ複合構造体を提供する第二サブステップと、
前記基板の第一表面に前記カーボンナノチューブ複合構造体を設置し、前記第一表面の一部を露出させる第三サブステップと、
前記カーボンナノチューブ複合構造体をマスクとして、前記第一表面をエッチングして、前記第一表面にパターン化突起を形成し、前記パターン化突起は互いに交差してネット構造体を形成し、複数の穴を定義する複数の帯状突起を含む第四サブステップと、
前記カーボンナノチューブ複合構造体を除去する第五サブステップと、
前記パターン化突起の表面に金属層を形成する第六サブステップと、
から、キャリアを提供する第一ステップと、
前記金属層の前記基板と離れる表面に、単一分子試料を設置する第二ステップと、
検出器で前記単一分子試料を検出する第三ステップと、を含むことを特徴とする単一分子を検出する方法。 - 前記第一ステップにおいて、各前記帯状突起の幅は20nm〜50nmであり、各前記帯状突起の高さは500nm〜1000nmであり、平行且つ隣接する二つの前記帯状突起の距離は10nm〜50nmであることを特徴とする請求項1に記載の単一分子を検出する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610512919.8 | 2016-07-01 | ||
CN201610512919.8A CN107561053B (zh) | 2016-07-01 | 2016-07-01 | 一种单分子检测方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018004644A JP2018004644A (ja) | 2018-01-11 |
JP6492125B2 true JP6492125B2 (ja) | 2019-03-27 |
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JP2017128437A Active JP6492125B2 (ja) | 2016-07-01 | 2017-06-30 | 単一分子を検出する方法 |
Country Status (4)
Country | Link |
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US (1) | US10145797B2 (ja) |
JP (1) | JP6492125B2 (ja) |
CN (1) | CN107561053B (ja) |
TW (1) | TWI599768B (ja) |
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CN109470679B (zh) * | 2017-09-08 | 2021-04-23 | 清华大学 | 用于分子检测的分子载体 |
CN110098099B (zh) * | 2018-01-27 | 2020-09-29 | 清华大学 | 透射电镜微栅及透射电镜微栅的制备方法 |
TWI687677B (zh) * | 2019-01-23 | 2020-03-11 | 國立清華大學 | 光學基板及其製備方法 |
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JPS584814B2 (ja) * | 1976-04-27 | 1983-01-27 | 三菱電機株式会社 | 半導体装置 |
US4793705A (en) * | 1987-10-07 | 1988-12-27 | The United States Of America As Represented By The United States Department Of Energy | Single molecule tracking |
JP2575270B2 (ja) * | 1992-11-10 | 1997-01-22 | 浜松ホトニクス株式会社 | 核酸の塩基配列決定方法、単一分子検出方法、その装置及び試料の作成方法 |
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CN103869546A (zh) * | 2014-03-06 | 2014-06-18 | 京东方科技集团股份有限公司 | 一种基板 |
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CN105336566B (zh) * | 2014-06-27 | 2018-10-02 | 清华大学 | 一种纳米级微结构的制备方法 |
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CN105668540B (zh) * | 2014-11-19 | 2017-11-14 | 清华大学 | 一种纳米线阵列的制备方法 |
CN105223744B (zh) * | 2015-10-29 | 2016-11-30 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
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