JP6471623B2 - Film forming apparatus and film forming method - Google Patents

Description

  The present invention relates to a film forming apparatus and a film forming method for forming a thin film on a long belt-like base material that can be wound into a roll.

  Thin-film electronic devices such as organic electroluminescence elements (organic EL elements), thin-film solar cells, thin-film liquid crystal display devices, etc. have thin-film electrode parts, functional layers, wiring parts, etc. formed on a substrate. Is manufactured by. In general, as a method of forming a thin film such as an electrode part, a functional layer, and a wiring part, a dry film forming method such as a physical vapor deposition method or a chemical vapor deposition method is often used.

  In film formation of an electrode part, a functional layer, a wiring part, etc. of a thin film electronic device, patterning using a vapor deposition mask is often performed. For example, a thin film having a predetermined pattern is formed by mounting a vapor deposition mask having an opening of a predetermined shape on a substrate and depositing a raw material on the surface of the substrate located below the opening of the vapor deposition mask by a dry film forming method. It is filmed.

  In the deposition of a thin film having such a pattern, the substrate is often charged strongly when the substrate is transported or when the deposition mask is removed after the deposition. When the base material is charged, foreign substances present in minute amounts in the environment easily adhere to the base material, and the base material is damaged by spark discharge generated when the base material and the deposition mask are desorbed. There is also a fear. Conventionally, in order to cope with such a problem, a technique has been proposed in which static electricity charged on a substrate is neutralized with a gas.

  For example, Patent Document 1 discloses a method of manufacturing a display device including an organic light emitting element having a first electrode, an organic layer, and a second electrode, and a film forming auxiliary member is overlaid on the substrate on which the first electrode is formed. One set including a superposition step of combining, a main step of forming the organic layer or the second electrode using the film formation auxiliary member, and a separation step of separating the film formation auxiliary member from the substrate, A method of manufacturing a display device is disclosed in which at least a part of the process from the main process to the next set overlapping process is performed in a nitrogen atmosphere. Examples of the process performed in the nitrogen atmosphere include a separation process, a superimposition process, and a static elimination process (see paragraphs 0050 to 0059).

  In recent years, a roll-to-roll manufacturing process is often employed for forming a thin film. In a roll-to-roll manufacturing process, a film wound into a roll is fed out and continuously or intermittently transported while being supported by a transport roller or the like to form a thin film. According to the roll-to-roll manufacturing process, productivity is improved as compared with a method of sequentially forming a film on a single-wafer substrate. Conventionally, a technique has been proposed in which static electricity charged on a film used in such a roll-to-roll manufacturing process is removed by gas.

  For example, Patent Document 2 discloses a plastic film static eliminator that neutralizes static electricity charged on a plastic film while conveying the plastic film from the unwinding device to the winding device in a vacuum container equipped with a vacuum exhaust means. Is disclosed. This static eliminator has a gas blowing means introduced from the outside of the vacuum vessel in the vicinity of the winding portion of the winding device, and is directed toward the plastic film in the vacuum vessel evacuated by the gas blowing means. Static electricity is removed by blowing gas.

JP 2009-140903 A JP 2009-181938 A

  According to the technique disclosed in Patent Document 1, since at least a part of the process from the completion of the main process to the superposition process of the next set is performed in a nitrogen atmosphere, the contact between the film formation auxiliary member and the substrate is performed. -Static electricity due to peeling can be removed, and it can be easily separated. In this manufacturing method, a single wafer drive substrate is transported by a transport robot, and nitrogen is introduced into each chamber such as a transfer chamber to perform static elimination.

  However, in the roll-to-roll manufacturing process, charging or spark discharge may occur due to peeling or friction with the conveyance roller or the like even during the conveyance of the film substrate, unlike the conveyance of the sheet substrate. . In addition, a roll-to-roll type film forming apparatus is usually provided with a blocking unit that freely opens and closes a plurality of sections in which each process is performed. For this reason, the film base material can come into contact with the shut-off unit at the time of opening and closing to cause charging and spark discharge.

  On the other hand, according to the technique disclosed in Patent Document 2, in a roll-to-roll manufacturing process, it is possible to discharge static electricity by discharging gas to the film in the winding chamber. ing. However, the technique disclosed in Patent Document 2 does not correspond to the charge neutralization generated during the conveyance of the film base material. For this reason, it is impossible to prevent adhesion of foreign matter and spark discharge that may occur during transportation, or spark discharge that occurs when a mask is attached and detached immediately after transportation.

  In addition, in a film base material that can be wound into a roll, it is difficult to neglect the influence of weak electrification that can occur during transportation, as compared to a highly rigid single-wafer substrate. For example, when the film substrate is charged, it is stuck when attaching or removing the vapor deposition mask, and positioning and peeling, and as a result, it becomes difficult to transport the film substrate, or wrinkles and deflection are caused by peeling charging of the transport roller. There is a high possibility that it will be easily generated, or the film base material will stick to the structural member and hinder handling. Moreover, in a film base material, compared with a single-wafer substrate having high rigidity, damage due to spark discharge tends to lead to defective thin film products.

  Therefore, the present invention provides a film forming apparatus and a film forming method that can handle a long belt-like base material with less trouble and can form a thin film with reduced defects caused by charging. Objective.

  The inventors of the present invention adopt a roll-to-roll manufacturing process, and in a film forming apparatus that forms a thin film while performing gas pressure adjustment on a long belt-shaped substrate, the substrate is charged. We found a method to efficiently eliminate static electricity and prevent spark discharge. Specifically, when intermittently carrying a long strip-shaped base material into or out of the film forming chamber, the film forming chamber and a section (buffer chamber) adjacent to the film forming chamber are used as a unit. By pressurizing the atmospheric pressure, static electricity was removed from the substrate, and defects caused by charging were reduced without significantly hindering film formation and conveyance of the substrate. That is, the above object of the present invention is achieved by the following configuration.

  1. A film forming apparatus for forming a thin film on a long belt-like base material, provided in the middle of a transport path for transporting the base material, and forming a thin film on the base material in a regulated atmosphere. A film forming chamber for forming a film; a first buffer chamber that is disposed upstream of the film forming chamber and capable of adjusting an atmospheric pressure; and a second buffer chamber that is disposed downstream of the film forming chamber and capable of adjusting an atmospheric pressure. A buffer chamber, and in the film formation chamber, a section of the base material is transferred to a film formation position to be stationary, and after the film formation, the one section is extended from the film formation position and next. The section of the first buffer chamber and the second buffer chamber is reduced in pressure when the thin film is formed, and the base material is reduced with respect to the film formation position. When moving the first buffer chamber, the film forming chamber, and the second buffer chamber. Deposition apparatus characterized by pressurizing the.

  2. 2. The film forming apparatus according to 1 above, wherein atmospheric pressures in the first buffer chamber, the film forming chamber, and the second buffer chamber are increased to 0.001 Pa to 10 Pa.

  3. The film formation chamber includes a film formation unit having an inert gas supply capability, and atmospheric pressures of the first buffer chamber, the film formation chamber, and the second buffer chamber are supplied from the film formation unit. 3. The film forming apparatus as described in 1 or 2 above, wherein the film is pressurized by an inert gas.

  4). 4. The film forming apparatus as described in 3 above, wherein the inert gas is argon gas or nitrogen gas.

  5. The film formation chamber has a mask for forming a film formation pattern on the thin film, and the film formation unit forms the thin film by a sputtering method, a chemical vapor deposition method, or an ion plating method. 5. The film forming apparatus described in 3 or 4 above.

  6). A film forming method for forming a thin film on a long belt-like substrate, wherein the thin film is formed on the substrate under a regulated atmosphere provided in the middle of a conveyance path through which the substrate is conveyed. A film forming chamber for forming a film; a first buffer chamber provided in the front stage of the film forming chamber and capable of adjusting the atmospheric pressure; and a second buffer chamber provided in the rear stage of the film forming chamber and capable of adjusting the atmospheric pressure. A film forming apparatus including a buffer chamber; a step of pressurizing an atmospheric pressure of the first buffer chamber, the film forming chamber, and the second buffer chamber; and a section of the base material under the pressurized atmosphere. A step of bringing the film into a film formation position in the film chamber and allowing it to stand still; a step of depositing the thin film under an atmosphere adjusted in the one section; the first buffer chamber, the film formation chamber, and the second Repressurizing the atmospheric pressure in the buffer chamber, and repeating the one section from the deposition position under a pressurized atmosphere. Deposition method characterized by comprising a to process.

  7). A mask is attached to the one section that is stationary at the deposition position under a pressurized atmosphere, the thin film is deposited under a regulated atmosphere, and then the mask is removed under the pressurized atmosphere. 7. The film forming method as described in 6 above.

  According to the present invention, it is possible to provide a film forming apparatus and a film forming method that can handle a long belt-like base material with less trouble and can form a thin film with reduced defects caused by charging. it can.

It is a figure which shows typically the structure of the film-forming apparatus which concerns on one Embodiment of this invention. It is a figure which shows typically 1 process of the film-forming method which concerns on one Embodiment of this invention. It is a figure which shows typically the next process of the film-forming method which concerns on one Embodiment of this invention.

  First, the configuration of a film forming apparatus according to an embodiment of the present invention will be described. In addition, about the structure which is common in the following each figure, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted.

FIG. 1 is a diagram schematically showing a configuration of a film forming apparatus according to an embodiment of the present invention.
As shown in FIG. 1, the film forming apparatus 1 according to this embodiment includes a feeding chamber 10, a first buffer chamber 20, a film forming chamber 30, a second buffer chamber 40, a winding chamber 70, and a plurality of them. The shut-off unit (51, 52, 53, 54). The film forming apparatus 1 is an apparatus that employs a roll-to-roll manufacturing process that can form a thin film on a long strip-shaped base material that can be wound into a roll.

  Examples of the long band-shaped base material that can be wound into a roll include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate (TAC), Cellulose acetates such as cellulose acetate butyrate, cellulose acetate propionate (CAP), cellulose acetate phthalate, cellulose nitrate, or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene Resin, Polymethylpentene, Polyetherketone, Polyimide, Polyethersulfone (PES), Polyphenylenesulfur , Polysulfones, polyether imide, polyether ketone imide, polyamide, fluororesin, nylon, polymethyl methacrylate, acrylic and polyarylates, Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by Mitsui Chemicals) Or a cycloolefin-based resin can be used. Note that thin films having various functions may be formed in advance on the surface of such a substrate.

  The feeding chamber 10, the buffer chambers 20 and 40, and the winding chamber 70 included in the film forming apparatus 1 each have an internal space that is separated from the outside air. These internal spaces are arranged in series in this order from the delivery chamber 10 to the first buffer chamber 20, the film formation chamber 30, the second buffer chamber 40, and the winding chamber 70 through openings through which the substrate can pass. Communicate. Therefore, the conveyance path which can convey a elongate strip-shaped base material by a roll-to-roll form is formed so that it may pass through each division from the feeding chamber 10 to the winding chamber 70. FIG.

  The film forming apparatus 1 is provided with a film forming chamber 30 in the middle of a transfer path through which the substrate is transferred. And the 1st buffer chamber 20 and the 2nd buffer chamber 40 are arrange | positioned so that it may be located in the front | former stage and back | latter stage of the film-forming chamber 30, respectively. In addition to the first buffer chamber 20, the film formation chamber 30 and the second buffer chamber 40, the film formation chamber is located between the feed chamber 10 and the take-up chamber 70, respectively, in the preceding stage and the subsequent stage. You may provide the some division comprised by a buffer chamber. That is, a plurality of film forming chambers may be installed in the film forming apparatus 1 to form different thin films to form a laminated film on the substrate. Specifically, the buffer chamber and the film formation chamber are alternately arranged, for example, the first buffer chamber, the first film formation chamber, the second buffer chamber, the second film formation chamber, and the third buffer chamber in this order. It can also take the form which is arrange | positioned. Moreover, you may provide the division which performs other processes, such as surface treatment of a thin film, sealing.

  As shown in FIG. 1, blocking units (51, 52, 53, 54) are provided in the conveyance path between the sections. A first blocking unit 51 is provided in the transfer path on the unwinding side (feeding chamber 10 side) of the first buffer chamber 20, and a second blocking unit is provided in the transfer path between the first buffer chamber 20 and the film forming chamber 30. 52, the transfer path between the film forming chamber 30 and the second buffer chamber 40 is the third blocking unit 53, the transfer path on the winding side (winding chamber 70 side) of the second buffer chamber 40 is the second Four blocking units 54 are provided. A blocking unit (not shown) is provided between other compartments such as the feeding chamber 10 and the winding chamber 70.

  The shut-off units (51, 52, 53, 54) partition the substrate conveyance path in an openable and airtight manner. Each shut-off unit (51, 52, 53, 54) is controlled to open and close independently. In the closed state, the film-forming surface (the lower surface in the figure) and the back surface (the lower surface in the figure) The conveying path is closed tightly in close contact with the upper surface in the drawing. Therefore, the movement of the gas through the conveyance path is substantially blocked by closing each blocking unit (51, 52, 53, 54).

  The feeding chamber 10, each buffer chamber (the first buffer chamber 20, the second buffer chamber 40), the film forming chamber 30, and the winding chamber 70 provided in the film forming apparatus 1 are provided so that the atmospheric pressure can be adjusted. That is, by closing each shut-off unit (51, 52, 53, 54), the atmospheric pressure in the internal space of each section is maintained. In addition, a vacuum pump (not shown) is independently connected to each compartment. Due to the operation of the vacuum pump, the internal space of each section is constantly evacuated, and the atmospheric pressure in the internal space of each section is reduced.

  The film forming apparatus 1 includes a transport unit that transports the base material. As the transport means, for example, a plurality of transport rollers (not shown) that support a long belt-like base material and are rotatably provided are installed along the transport path. The long belt-like base material is laid in a tensioned state between a plurality of transport rollers, and is continuously or intermittently transported on the transport path by the rotation of the drive transport roller. Yes.

  In the film forming apparatus 1, a thin film having a pattern is formed intermittently and repeatedly in the longitudinal direction of the long belt-like substrate. That is, while the base material is transported, a thin film is formed on one section in the longitudinal direction of the long belt-like base material, and the base winding side of the base material is sandwiched by a non-film formation section of a predetermined length. A thin film is formed for the next section. Thereafter, the conveyance of the base material and the intermittent film formation are repeated, and the base material roll (winding roll 180) on which a large number of thin films are formed is collected. Note that the non-film forming section is a section that is arranged at intervals in the longitudinal direction of the base material and does not form a thin film and is in contact with each shut-off unit (51, 52, 53, 54) that is in a closed state. It becomes.

  The feeding chamber 10 is a section that unwinds and feeds a long strip-shaped base material wound in a roll shape. In the feeding chamber 10, a feeding machine for unwinding the roll of the base material is installed. The base roll 100 of the base material carried into the feeding chamber 10 is mounted on the feeding machine. And a roll-shaped base material is unwound continuously or intermittently with a drawing machine, and is drawn out to the next process.

  The buffer chambers (the first buffer chamber 20 and the second buffer chamber 40) are compartments that can temporarily store a partial section of the substrate to be transported. An accumulator 110 is installed in each buffer chamber 20, 40. The accumulator 110 has a fixed support roller and a movable roller that can reciprocate (vertically move) in the normal direction of the substrate to be conveyed.

  The accumulator 110 operates to adjust the length of the section of the base material supported between the support rollers by moving the movable roller up and down while supporting one side of the base material. By such an operation, the feed amount of the base material to the next process is managed. Therefore, when the accumulator 110 is operated, a part of the base material is accumulated in the buffer chamber, and the feeding of the base material into the film forming chamber 30 and the feeding from the film forming chamber 30 are adjusted.

  The film forming chamber 30 is a section for forming a thin film on a substrate. Specifically, the thin film is formed at a predetermined film formation position P (shown by a broken line in FIG. 1) provided in the film formation chamber under a regulated atmosphere. In this film formation position P, one section (film formation section L) (see FIGS. 2 and 3) on which the thin film is formed is intermittently transferred. Then, a thin film having a predetermined pattern is formed by patterning using the mask 130 in a section (film formation section L) that is stationary at the film formation position P. Thereafter, the section in which the thin film is formed (deposition section L) is fed out from the deposition position P, while the next section (deposition section L) is brought into the deposition position P and deposition is repeated.

  The film forming chamber 30 includes a film forming unit 120, a mask 130, a mask mounting unit 140, and a base material supporting unit 150. The film forming unit 120 is installed below the film forming position P and adopts a deposition type arrangement so as to face the film forming surface of the base material. The mask 130 is disposed between the film forming unit 120 and the base material located at the film forming position P. Further, at the film forming position P, the base material supporting means 150 is arranged on the back surface side of the film forming surface of the base material so as to face the mask 130.

  The film forming unit 120 is a film forming machine having an inert gas supply capability. The film formation unit 120 supplies an inert gas, an energy application mechanism for applying energy to the inert gas, and a raw material gas other than the inert gas to form a thin film. A gas supply mechanism and other various mechanisms for film formation are provided. In the film forming apparatus 1, the film forming unit 120 releases an inert gas into the internal space of the film forming chamber 30, whereby the atmospheric pressure in the film forming chamber 30 can be increased. Therefore, when the first blocking unit 51 and the second blocking unit 52 are in the open state, the atmospheric pressure in the first buffer chamber 20 and the second buffer chamber 40 communicating with the film forming chamber 30 is also applied by the film forming unit 120. It is possible to press.

  As the inert gas, an appropriate gas having low reactivity with respect to the base material or the thin film can be used. Examples thereof include rare gases such as argon gas, helium gas, neon gas, and xenon gas, nitrogen gas, and mixed gas containing these as main components. Particularly preferred inert gas is argon gas or nitrogen gas. The film forming unit 120 generates plasma by applying energy to the inert gas or the like in an atmosphere regulated by the supply of the inert gas, and forms a thin film using the plasma. It is configured as follows. Specifically, the film forming unit 120 forms a thin film by sputtering, chemical vapor deposition (CVD), or ion plating. As the chemical vapor deposition method, various methods such as a plasma CVD method, a thermal CVD method, and a laser CVD method can be applied.

  For example, when film formation is performed by the film formation unit 120 using a sputtering method, the inert gas released into the internal space of the film formation chamber (30, 50) is turned into plasma by application of a voltage from the energy application mechanism. And the raw material particle | grains of a thin film are generated by colliding the cation in the produced | generated plasma with the raw material target with which internal space is equipped. On the other hand, when film formation is performed by the chemical vapor deposition method using the film formation unit 120, a source gas containing a thin film source and an inert gas are mixed and released into the internal space of the film formation chamber 30, and an energy application mechanism. By applying energy such as plasma, heat, light, etc., raw material particles for the thin film are generated. Then, a thin film is formed by depositing the generated raw material particles on the film formation surface of the substrate. In addition, when the film is formed by the ion plating method using the film forming unit 120, the inert gas is converted into plasma by the energy application mechanism, and the raw material particles vaporized by the plasma are ionized, and the film formation surface of the substrate A voltage is applied to the electrode disposed on the back surface side of the substrate to promote the deposition of the raw material particles on the film formation surface side.

  The mask 130 is an auxiliary tool that covers a part of the substrate and forms a film formation pattern. The mask 130 is a plate-like body made of metal such as SUS, iron-nickel alloy, nickel-base alloy, or ceramics such as alumina or zirconia. On the main surface of the mask 130, an opening having a predetermined shape penetrating in accordance with a desired thin film pattern is formed. For this reason, when the mask 130 is in close contact with the surface of the base material, a partial surface located on the opening is exposed to the film forming unit 120. Note that the mask 130 is electrically grounded from the viewpoint of preventing base material sticking due to charging, base material damage due to spark discharge, and foreign matter adhering when being attached to and detached from the base material. It is preferable to keep.

  The mask mounting means 140 is a device that detachably mounts the mask 130 on the base material. The mask mounting means 140 supports the mask 130 and is provided so that the mask 130 can reciprocate from the standby position to the mounting position. Specifically, at the time of film formation, the mask mounting unit 140 is operated to move to the mounting position where the mask 130 is in close contact with the surface of the substrate. On the other hand, at the time of non-film formation, the mask 130 is removed from the surface of the base material by the operation of the mask mounting means 140 and returned to the standby position.

  The substrate support means 150 is a movable device that can support the back surface of the film formation surface of the substrate. The substrate support means 150 has a contact surface parallel to the main surface of the mask 130, and has a temperature control function of adjusting the temperature of the substrate during film formation. The base material support unit 150 stands by at a standby position where the contact surface is separated from the base material when the film is not formed. On the other hand, at the time of film formation, the contact surface moves to a position where it comes into contact with the back surface of the film formation surface of the substrate. Therefore, the back side of the base material on which the mask 130 is mounted is supported by the base material support means 150 so that the base material is not bent and the mask 130 is not displaced. Further, during film formation, heat is transferred to the back surface of the film formation surface of the base material so that the base material is heated to a temperature suitable for film formation.

  The winding chamber 70 is a section in which a long belt-like substrate on which a thin film is formed is wound into a roll shape and wound. In the winding chamber 70, a winder that winds the substrate in a roll shape is installed. The substrate conveyed to the winding chamber 70 is continuously or intermittently wound by a winder and wound into a roll, and the substrate on which a thin film is formed is collected as a winding roll 180. It is like that.

In the film forming apparatus 1 described above, the feeding chamber 10, each buffer chamber (the first buffer chamber 20, the second buffer chamber 40), and the winding chamber 70 are always in a reduced-pressure atmosphere less than atmospheric pressure by the operation of the vacuum pump. Maintained. Specifically, the atmospheric pressure in these compartments is preferably in the range of 1.0 × 10 ⁻¹ Pa or less in terms of absolute pressure, more preferably 1.0 × 10 ⁻⁵ Pa to 1.0 × 10 in terms of absolute pressure. ^The pressure is adjusted to a range of a high vacuum region of ⁻¹ Pa or less, more preferably 1.0 × 10 ⁻⁵ Pa or more and 1.0 × 10 ⁻³ Pa or less in absolute pressure. By maintaining each compartment in a reduced-pressure atmosphere, adhesion of foreign matters to the surface of the base material or thin film, entry of oxygen, moisture, or the like into the base material or thin film is prevented.

  On the other hand, the film forming chamber 30 is formed in a film formation on the base material while the film forming chamber 30 is in a reduced-pressure atmosphere below atmospheric pressure when no film formation is performed on the base material. Sometimes, the pressure is adjusted to a predetermined atmospheric pressure by a gas supply mechanism provided in the film forming unit 120. That is, at the time of film formation, the atmospheric pressure is adjusted toward the pressurized side, and the size of the raw material particles deposited on the surface of the substrate and the thickness of the thin film are controlled. Note that the atmospheric pressure during film formation may be any of a reduced-pressure atmosphere less than atmospheric pressure and an atmosphere higher than atmospheric pressure. After film formation, vacuuming is performed, the gas is exhausted, and the pressure is reduced again to the original reduced-pressure atmosphere.

  In general, in a film forming apparatus that employs a roll-to-roll manufacturing process, while a long belt-shaped substrate is being conveyed, the substrate, conveying means (such as a conveying roller), a blocking unit, etc. Can come into contact with each other and rub against each other. The charged base material may cause spark discharge, wrinkles, or bends when attached or detached. In particular, when a mask is used in the film forming chamber, there is a risk that the base material and the mask will stick when the mask is attached or removed, or the base material may be wrinkled or bent when peeled off from the mask. high. Furthermore, there is a concern that charging occurs when peeling from the mask, and foreign matter adheres or sparks discharge in the next process. In particular, in the film forming apparatus 1 in which each section has a reduced-pressure atmosphere, static electricity charged on the base material is difficult to be neutralized, and such trouble caused by charging cannot be neglected.

  Therefore, in the film forming apparatus 1 according to the present embodiment, when the base material is moved relative to the film forming position P provided in the film forming chamber 30, that is, a section of the base material on which the thin film is formed ( While the film forming section L) is fed into or out of the film forming position P, the atmospheric pressure in the section in which the substrate is transported is increased. In addition, when the mask 130 is attached to or detached from the substrate stationary at the film formation position P, the atmospheric pressure in the film formation chamber 30 is similarly increased.

  Specifically, the atmospheric pressure in each section of the film forming apparatus 1 can be increased by supplying a gas from a gas supply mechanism included in the film forming unit 120. However, a gas supply device is installed in each partition such as the first buffer chamber 20 and the second buffer chamber 40, and the atmospheric pressure is increased by supplying a gas instead of the film forming unit 120 or together with the film forming unit 120. It is also possible to perform. The pressurization of the atmospheric pressure is mainly performed to reduce the discharge generation voltage based on Paschen's law. The amount of charge can be reduced by reducing the discharge generation voltage and facilitating self-discharge at a low voltage. Hereinafter, the film forming method according to the present embodiment will be described with reference to the operation method of the film forming apparatus 1.

FIG. 2 is a diagram schematically showing one step of the film forming method according to one embodiment of the present invention. FIG. 2A is a stage before transporting the base material, in a state where transport of the base material is stopped, FIG. 2B is a state where transport of the base material is being performed, FIG. FIG. 2C is a diagram showing a state in which a mask is attached to the substrate, and FIG. 2D is a diagram showing a state in which film formation is being performed on the substrate. In the following drawings, an explanation will be given by taking as an example a process for an unspecified number of sections among a plurality of deposition sections L in which a thin film is intermittently repeatedly formed along the longitudinal direction of the substrate. Each of the film forming sections (L _n−1 , L _n , L ₁ , L ₂ ...) Intermittently positioned in the longitudinal direction of the substrate has a length or interval of each section to be formed. An appropriate size is provided based on the type of thin film, the size of the film forming unit 120 and the mask 130, the length of the base material, and the like. Further, the length of the conveyance path in each section such as the film forming chamber 30 is also set to an appropriate size. That is, the number of film forming sections L present in each section is not limited to the form illustrated in the figure, and may be plural.

In the film forming apparatus 1, the long belt-like base material on which the thin film is formed is transported from the feeding chamber 10 (see FIG. 1) toward the film forming chamber 30, and the thin film is formed in the film forming chamber 30. A section of the base material on which the thin film is formed (film formation section L) is arranged at a predetermined interval along the longitudinal direction of the base material. In FIG. The film formation for the film formation section L _n ) has been completed. Conveying the substrate in the film forming chamber 30 is stopped, the film formation section L _n is a state which is stationary in the deposition position.

As shown in FIG. 2A, in the film forming apparatus 1, the transport of the base material is started, and one section of the base material (film forming section L _n ) is fed out from the film forming position and the next section (film forming). When the section L ₁ ) is moved into the film forming position, the atmospheric pressure in the first buffer chamber 20, the film forming chamber 30 and the second buffer chamber 40 is increased. Specifically, the first blocking unit 51 and the fourth blocking unit 54 are closed while the substrate is stationary, while the second blocking unit 52 and the third blocking unit 53 are open. And Then, the gas G is supplied to the first buffer chamber 20, the film forming chamber 30 and the second buffer chamber 40 to increase the atmospheric pressure. In addition, the pressurization of the atmospheric pressure performed at this time corresponds to the pressurization performed before removing the mask 130 in the section where the film has already been formed (deposition section L _n ), as will be described in detail later. doing.

The atmospheric pressure in the first buffer chamber 20, the film forming chamber 30, and the second buffer chamber 40 is preferably increased to about 100 times or more from the normal absolute pressure. Therefore, the atmospheric pressure in the range of 1.0 × 10 ⁻⁵ Pa to 1.0 × 10 ⁻¹ Pa in terms of absolute pressure is preferably increased to the atmospheric pressure in the range of 0.001 Pa to 10 Pa in terms of absolute pressure. . By preliminarily placing the section of the base material to be transported in a pressurized atmosphere, it is possible to prevent the base material from sticking or spark discharge due to the charge generated by the transport. As shown in FIG. 2A, the atmospheric pressure may be increased by the film forming unit 120 or by a gas supply mechanism installed in the first buffer chamber 20 or the second buffer chamber 40. However, this is preferably performed by the film forming unit 120, and is preferably performed by ionizing the gas by an energy application mechanism or the like provided in the film forming unit 120. This is because when the gas G is ionized, static electricity charged on the substrate, the transport roller, the blocking unit, and the like is efficiently neutralized.

Subsequently, as shown in FIG. 2B, the substrate is transported under a pressurized atmosphere, and the next section (deposition section) of the substrate on which the thin film is to be formed at the deposition position in the deposition chamber 30. L ₁ ) is introduced and stopped. The section where the thin film is already formed (film formation section L _n ) is fed out from the film formation position by transporting the substrate. The relative position of the substrate moves with respect to the film forming position, and a pressurized atmosphere is maintained during that time. While the next section (film formation section L ₁ ) of the substrate is fed, the supply of the gas G may be continued, or the supply may be stopped when the predetermined pressure is reached. When the substrate being transported is placed in a pressurized atmosphere, the substrate, transport roller, blocking unit, and the like placed in the first buffer chamber 20, the film forming chamber 30, and the second buffer chamber 40 are charged. Static electricity is removed, and positively charged or neutralized static electricity is not easily accumulated due to aggressive discharge or neutralization. And sticking of a base material, spark discharge, etc. accompanying a contact and peeling with a base material and a conveyance roller are prevented.

Subsequently, as shown in FIG. 2C, a mask 130 is applied under a pressurized atmosphere to one section (deposition section L ₁ ) of the base material on which the thin film stationary at the deposition position is to be formed. Install. Specifically, in a state where the atmospheric pressure is increased, the base material support means 150 is moved to a position in contact with the back surface of the film formation surface of the base material, and the mask mounting means 140 is operated to move the mask 130 to the base material. Move to the position where it comes into close contact with the surface. The mask 130 is precisely aligned with the film formation section (L ₁ ), for example, by detecting an alignment mark engraved on the substrate with a camera (not shown). When the atmospheric pressure is increased at the time of wearing the mask in this manner, the discharge generation voltage is reduced, and the self-discharge is easily performed at a low voltage, thereby suppressing the charge amount. As a result, charging and spark discharge that occur when the mask is mounted can be prevented, and unintentional sticking to the mask due to charging of the substrate can be prevented.

Subsequently, as shown in FIG. 2D, the thin film is formed under an atmosphere in which the pressure is adjusted with respect to one section of the base material on which the thin film is to be formed (deposition section L ₁ ). Specifically, the second blocking unit 52 and the third blocking unit 53 are closed while the substrate is stationary, and the supplied gas G is once exhausted from the film forming chamber 30. Then, the raw material gas S or the like is supplied from the film forming unit 120 under predetermined conditions, and the thin film raw material particles are applied to the surface of the film forming section (L ₁ ) through the opening of the mask 130 under the adjusted predetermined atmospheric pressure. A thin film having a pattern is formed by deposition. The film forming method may be any of sputtering, chemical vapor deposition (CVD), or ion plating.

  As shown in FIG. 2D, the atmospheric pressure in the first buffer chamber 20 and the second buffer chamber 40 adjacent to the film formation chamber 30 is evacuated while the film formation is performed in the film formation chamber 30. The pressure is reduced to a reduced pressure atmosphere below atmospheric pressure. By depressurizing each of the buffer chambers 20 and 40, the gas G supplied from the film formation chamber 30 is exhausted. The accumulator 110 provided in each of the buffer chambers 20 and 40 functions to adjust a tact time and a transport speed difference in film formation between the film formation chamber 30 and another film formation chamber (not shown). In each of the buffer chambers 20 and 40, a part of the base material is temporarily accumulated. By depressurizing each of the buffer chambers 20 and 40, foreign matter adheres to oxygen, moisture, or the like in a part of the accumulated base material or a thin film that has already been formed. Contamination of the gas is prevented.

As shown in FIG. 2D, while the film formation is performed in the film formation chamber 30, the conveyance of the substrate is stopped in the film formation chamber 30, and the film formation section (L ₁ ) is not formed. It is in a state where it is stationary at the film position. On the other hand, in the 1st buffer chamber 20 and the 2nd buffer chamber 40, it is possible to convey about a section of a substrate. In FIG.2 (d), although the 1st interruption | blocking unit 51 and the 4th interruption | blocking unit 54 are made into the closed state, the unwinding side of a base material is made into the 1st buffer by making into an open state intermittently. It may be fed into the chamber 20 or the take-up side may be fed out from the second buffer chamber 40.

  FIG. 3 is a diagram schematically showing the next step of the film forming method according to one embodiment of the present invention. 3A shows a state immediately after the thin film is formed and before the mask attached to the substrate is removed, and FIG. 3B shows the state where the mask attached to the substrate is removed. FIG. 3C shows a state where the substrate is being transported. 3B shows a state where a process substantially corresponding to FIG. 2A is performed, and FIG. 3C shows a state where the process substantially corresponds to FIG.

As shown in FIG. 3A, in the film forming apparatus 1, after the thin film is formed, before removing the mask 130 attached to one section (film forming section L ₁ ) of the base material. Then, the atmospheric pressure of the first buffer chamber 20, the film forming chamber 30, and the second buffer chamber 40 is repressurized. Specifically, the supplied source gas S (see FIG. 2D) and the like are once exhausted from the film forming chamber 30, and the first cutoff unit 51 and the fourth cutoff unit 54 are closed. The second blocking unit 52 and the third blocking unit 53 are in an open state. Then, the gas G is supplied to the first buffer chamber 20, the film forming chamber 30 and the second buffer chamber 40 to increase the atmospheric pressure.

The atmospheric pressure in the first buffer chamber 20, the film forming chamber 30, and the second buffer chamber 40 is preferably increased to about 100 times or more from the normal absolute pressure, as in the case of transporting the base material. Therefore, the atmospheric pressure in the range of 1.0 × 10 ⁻⁵ Pa to 1.0 × 10 ⁻¹ Pa in terms of absolute pressure is preferably increased to the atmospheric pressure in the range of 0.001 Pa to 10 Pa in terms of absolute pressure. . By increasing the atmospheric pressure when removing the mask, charging and spark discharge can be prevented, and unintentional sticking to the mask due to charging of the substrate can be prevented. The pressurization of the atmospheric pressure may be performed by a gas supply mechanism installed in the first buffer chamber 20 or the second buffer chamber 40, but is preferably performed by the film forming unit 120, and energy application provided in the film forming unit 120 is applied. It is preferable that the gas is ionized by a mechanism or the like.

Subsequently, as shown in FIG. 3B, the mask 130 attached to one section (deposition section L ₁ ) of the substrate on which the thin film is formed is removed under a pressurized atmosphere. Specifically, the mask 130 is separated from the surface of the base material by the operation of the mask mounting means 140 under a pressurized atmosphere, and the base material supporting means 150 is placed at a standby position separated from the back surface of the film formation surface of the base material. return. At this time, the conveyance of the base material in the film forming chamber 30 is stopped, the film formation section L ₁ is a state which is stationary in the deposition position.

Subsequently, as shown in FIG. 2C, the substrate is transported under a pressurized atmosphere, and the next section (deposition section) of the substrate on which the thin film is to be formed at the deposition position in the deposition chamber 30. L ₂ ) is introduced and stopped. By transporting the substrate, the section where the thin film has already been formed (deposition section L ₁ ) is fed out from the deposition position under a pressurized atmosphere. The relative position of the substrate moves with respect to the film forming position, and a pressurized atmosphere is maintained during that time. Thereafter, at the film forming position of the film forming chamber 30, the next section (film forming section L ₃ ,...) Of the base material on which the thin film is to be formed, the thin film formation, and the thin film formation have already been performed. The delivered section (film formation section L ₂ ,...) Is intermittently repeated, and the winding roll 180 on which a plurality of thin film groups are formed is collected.

  In the above-described film forming apparatus 1, the feeding chamber 10 and the buffer chamber (the first buffer chamber 20 and the second buffer chamber 40) can be used in a reduced pressure atmosphere. A neutralizing means such as a mechanism can be provided. Depending on the film formation method, it can also be installed in the film formation chamber 30. What is necessary is just to construct an electric flux line, a static elimination string, and a static elimination brush on the conveyed base material. In particular, it is preferable to arrange on a base material supported by a conveying roller. In addition, as the grounding mechanism, for example, a mechanism that supports the base material by a conveyance roller that is electrically grounded can be used. According to the static elimination means, static elimination is performed even in a reduced-pressure atmosphere, so that charging of the base material and spark discharge can be prevented more reliably.

  According to the film forming apparatus and the film forming method according to the present embodiment described above, when forming a thin film on a long strip-shaped base material that can be wound in a roll shape, the base material on which the film is formed is arranged in the longitudinal direction. When transporting, the section transported by transport rollers or the like can be placed in a pressurized atmosphere. For this reason, it is possible to satisfactorily remove static electricity charged in the vicinity of the section. As a result, it is possible to obtain a thin film with good quality in which the adhesion of foreign matters to the base material due to charging and the occurrence of damage due to spark discharge are suppressed, and defects due to charging are reduced.

  Further, according to the film forming apparatus and the film forming method according to the present embodiment, since the base material is sufficiently neutralized, the base material is misaligned and attached to the transport roller, the blocking unit, the mask, and the like during the manufacturing process. It is less likely to stick or peel off when attached or detached. Moreover, it becomes difficult to produce a wrinkle and a bending | flexion at the time of peeling and attachment / detachment. Therefore, when forming a thin film on a long strip-shaped base material that can be wound in a roll shape, the long strip-shaped base material can be handled with little trouble. In particular, sticking due to charging of a mask used for thin film patterning is prevented, which is advantageous in that mask alignment and peeling can be easily performed.

  The film forming apparatus and the film forming method according to the present embodiment can be applied to the manufacture of thin film electronic devices such as organic EL elements, thin film solar cells, and thin film liquid crystal display devices. Among these, it can use suitably for manufacture of an organic EL element especially. An organic EL element is formed by, for example, laminating a transparent electrode having a light transmitting property, an organic layer containing an organic light emitting material and having a charge transporting property, and a reflective electrode having a high inner surface-side reflectance. The surface on the opposite side to the base material sandwiching these is sealed. The film forming apparatus and film forming method according to the present embodiment can be applied to, for example, film formation of a barrier film and an electrode in the manufacture of an organic EL element. Further, the present invention can also be applied to the formation of an inorganic buffer layer having a charge transporting ability stacked on an organic layer.

The barrier film can be formed, for example, by forming a film made of an inorganic material, an organic material, or a hybrid thereof on a base material. That is, film formation is performed using an inorganic material or an organic material that suppresses intrusion of moisture, oxygen, or the like as a raw material in a film formation chamber provided in the film formation apparatus. The barrier film had a water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)% RH) of 0.01 g / (m ² · 24 h) measured by a method according to JIS K 7129-1992. The following barrier film, oxygen permeability measured by a method according to JIS K 7126-1987 is 10 ⁻³ ml / (m ² · 24 h · atm) or less, and water vapor permeability is 10 ⁻⁵ g / (m ² · 24 h) or less high barrier film is preferred.

  Examples of the material for the barrier layer include hexamethyldisiloxane, hexamethyldisilane, 1,1,3,3-tetramethyldisiloxane, vinyltrimethylsilane, methyltrimethylsilane, hexamethyldisilane, methylsilane, dimethylsilane, and trimethylsilane. , Diethylsilane, propylsilane, phenylsilane, vinyltriethoxysilane, vinyltrimethoxysilane, tetramethoxysilane, tetraethoxysilane, phenyltrimethoxysilane, methyltriethoxysilane, octamethylcyclotetrasiloxane and the like.

  The electrode includes, for example, an electrode material formed on a base material or a barrier layer formed on the base material, a compound layer containing an alkali metal or an alkaline earth metal and oxygen, and silver. It is possible to form a film by laminating a metal layer made of Oxygen atoms in the compound layer and silver atoms in the metal layer form silver oxide growth nuclei, and the silver atoms grow from the growth nuclei, whereby a transparent electrode having a dense structure is formed. That is, in a plurality of film formation chambers provided in the film formation apparatus, film formation using silver or a silver alloy as a raw material and film formation using an oxide of an alkali metal or an alkaline earth metal or a metal salt thereof as a raw material I do.

Examples of electrode materials include metals such as Au, anode materials such as CuI, indium tin oxide (ITO), SnO ₂ and ZnO, sodium, sodium-potassium alloys, magnesium, lithium, magnesium / copper mixtures, and magnesium / silver. Examples include a mixture, a magnesium / aluminum mixture, a magnesium / indium mixture, an aluminum / aluminum oxide (Al ₂ O ₃ ) mixture, an indium, a lithium / aluminum mixture, and a cathode material such as a rare earth metal. Examples of the alkali metal or alkaline earth metal oxide and metal salt include Li ₂ O, Rb ₂ O, Cs ₂ O, Li ₂ O ₂ , Rb ₂ O ₂ , Cs ₂ O ₂ , LiAlO ₂ , _{LiBO 2, KAlO 2, NaWO 4} , K 2 SiO 3, Li 2 CO 3, CaCO 3, Na 2 CO 3 and the like. Examples of the silver alloy include alloys containing silver as a main component, such as AgMg, AgCu, AgPd, AgPdCu, AgIn, AgAl, and AgMo.

  According to the film forming apparatus and the film forming method according to the present embodiment, when forming a barrier film, a transparent electrode, a wiring electrode, or the like of an organic EL element on a long strip-shaped base material that can be wound in a roll shape, The substrate on which the film is formed can be handled under a reduced-pressure atmosphere except during transport, when a mask is attached, when a mask is removed, and when a film is formed. Therefore, oxygen, moisture, and the like that cause deterioration of the element are prevented from entering the base material and the thin film during the manufacturing process, and the initial performance of the manufactured organic EL element is prevented from being lowered. Then, an inert gas used when forming a barrier film, a transparent electrode layer, a wiring electrode layer, an optical adjustment layer, or the like of the organic EL element by a sputtering method, a chemical vapor deposition method, or an ion plating method is used. It is possible to perform static elimination. For this reason, it is possible to use an existing film forming unit, and it is not necessary to newly install an equipment for supplying an inert gas. Therefore, it is possible to realize static elimination at a low cost.

  In the film forming apparatus 1 described above, the film forming unit 120 is a film forming machine having an inert gas supply capability. Instead, the inert gas is supplied separately from the film forming apparatus. Means may be provided in the deposition chamber. In the film forming apparatus 1, the pattern film formation using the mask is performed in the film forming chamber 30. Alternatively, the film formation without using the mask may be performed. . Further, in other film forming chambers that can be provided together with the film forming chamber 30, pattern film formation using a mask and film formation not using a mask may be performed in various combinations. Even when a mask is not used, it is possible to reduce defects caused by charging during conveyance.

DESCRIPTION OF SYMBOLS 1 Film-forming apparatus 10 Delivery chamber 20 1st buffer chamber 30 Film-forming chamber 40 2nd buffer chamber

Claims (7)

A film forming apparatus for forming a thin film on a long belt-shaped substrate,
A film forming chamber that is provided in the middle of a transport path through which the base material is transported, and that forms a thin film on the base material under a regulated atmosphere;
A first buffer chamber which is disposed in a front stage of the film forming chamber and capable of adjusting an atmospheric pressure;
A second buffer chamber disposed downstream of the film formation chamber and capable of adjusting the atmospheric pressure;
In the film forming chamber, a section of the base material is transferred to a film forming position and stopped to form a film, and after the film formation, the one section is extended from the film forming position and the next section is formed in the film forming position. Repeat the film formation in the position,
When forming the thin film, the atmospheric pressure in the first buffer chamber and the second buffer chamber is reduced.
The film forming apparatus, wherein when the substrate is moved with respect to the film forming position, an atmospheric pressure in the first buffer chamber, the film forming chamber, and the second buffer chamber is increased.   2. The film forming apparatus according to claim 1, wherein an atmospheric pressure in the first buffer chamber, the film forming chamber, and the second buffer chamber is increased to 0.001 Pa or more and 10 Pa or less. The film forming chamber has a film forming unit having an inert gas supply capability,
The atmosphere pressure in the first buffer chamber, the film formation chamber, and the second buffer chamber is increased by an inert gas supplied from the film formation unit. The film-forming apparatus of description.   The film forming apparatus according to claim 3, wherein the inert gas is argon gas or nitrogen gas. The film formation chamber has a mask for forming a film formation pattern on the thin film;
The film forming apparatus according to claim 3 or 4, wherein the film forming unit forms the thin film by a sputtering method, a chemical vapor deposition method, or an ion plating method. A film forming method for forming a thin film on a long belt-shaped substrate,
A film forming chamber that is provided in the middle of a transport path through which the base material is transported, and that forms a thin film on the base material under a regulated atmosphere;
A first buffer chamber provided in a front stage of the film forming chamber and capable of adjusting an atmospheric pressure;
In a film forming apparatus provided with a second buffer chamber provided downstream of the film forming chamber and capable of adjusting the atmospheric pressure,
Pressurizing the atmospheric pressure of the first buffer chamber, the film forming chamber, and the second buffer chamber;
A step of bringing a section of the base material into a film forming position in the film forming chamber under a pressurized atmosphere to be stationary;
Forming the thin film under an atmosphere adjusted to the one section; and
Repressurizing the atmospheric pressure of the first buffer chamber, the film forming chamber, and the second buffer chamber;
And a step of feeding out the one section from the deposition position under a pressurized atmosphere.   A mask is attached to the one section that is stationary at the deposition position under a pressurized atmosphere, the thin film is deposited under a regulated atmosphere, and then the mask is removed under the pressurized atmosphere. The film forming method according to claim 6.

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