JP2010165620A - Method of manufacturing organic electroluminescent element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an organic EL element for continuously forming a film in a dry film forming process without disconnecting a wet film forming process and dry film forming process and without being affected by an amount of film formation raw material in manufacturing by a roll-to-roll system in a manufacturing process of the organic EL element including the wet film forming process and dry film forming process. <P>SOLUTION: The method of manufacturing the organic EL element uses the manufacturing process including the wet film forming process and dry film forming process, and manufactures the organic EL element by the roll-to-roll system. In the dry film forming process, a gas phase film formation unit, which includes a film formation chamber for independently controlling a film formation condition, an atmospheric pressure adjusting chamber, and a heating evaporation chamber, is used. The gas phase film formation unit maintains vacuum of the film formation chamber, the heating evaporation chamber and film formation chamber can be separated and joined, and continuous film formation can be carried out. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an organic electroluminescence element (hereinafter also referred to as an organic EL element) by a roll-to-roll method, and more specifically, a roll-to-roll method in a manufacturing process having a wet film forming process and a dry film forming process. It is related with the manufacturing method of the organic EL element manufactured by this.

  In recent years, organic EL elements have attracted attention as self-luminous elements. The organic EL device includes a first electrode (anode or cathode) formed on a substrate, an organic compound layer (single layer portion or multilayer portion) containing an organic light emitting material laminated thereon, that is, a light emitting layer, It is a thin film type element having a second electrode (cathode or anode) laminated on the light emitting layer. When a voltage is applied to such an organic EL element, electrons are injected from the cathode and holes are injected from the anode into the organic compound layer. It is known that light is obtained by releasing energy as light when the electrons and holes recombine in the light emitting layer and the energy level returns from the conduction band to the valence band.

  Thus, since the organic EL element is a thin film type element, when an organic EL element in which one or a plurality of organic EL elements are formed on a film substrate is used as a surface light source such as a backlight, A device provided with a surface light source can be easily made thin. In addition, when an organic EL display device is configured using an organic EL element in which a predetermined number of organic EL elements as pixels are formed on a substrate as a display panel, the liquid crystal display has high visibility and no viewing angle dependency. Consideration is being made because there are advantages that cannot be obtained with the device.

  An organic EL element is a light-transmitting electrode (anode), for example, an organic functional layer of a nanometer unit having at least a light emitting layer on an ITO (indium tin oxide), and finally a thin-film electrode (cathode). Is obtained. However, even if all the thicknesses of these thin films are combined, the total film thickness is less than 0.6 microns, which is a laminate of functional thin films having a very thin multilayer structure. Accordingly, the substrate before forming the functional thin film needs to have excellent flatness, and when there are foreign matters, protrusions, scratches, creases, cracks, etc., when an organic EL element is used, a short circuit (so-called so-called , Leakage) may cause an increase in light emission current or non-light emission.

  In addition, organic EL elements are used for substances typified by moisture, oxygen, etc. that interfere with the electrochemical process until light emission occurs due to charge transfer or formation of excitons in the light emitting layer. Very sensitive. If these substances are present as impurities from the beginning, mixed in during the manufacturing process, or enter beyond the damaged part of the material layer that prevents gas diffusion, the light emission efficiency and drive life will be significantly shortened. The performance for practical lighting and display cannot be obtained.

  In addition, moisture, oxygen, and the like may change the electrical and chemical characteristics of the electrode surface and the inside, and may hinder the movement of electrons and holes, and as a result, the practical characteristics are greatly deteriorated.

  The details of the organic EL element are described in detail in each chapter of “Organic EL Display” (Shitoki Tokito, Chiba Adachi, Hideyuki Murata, co-authored) published by Ohm.

  Therefore, the organic EL element is, for example, encapsulated with a desiccant and enclosed in a structure sealed with glass or a metal can, or based on a layer having barrier performance against gas components such as moisture and oxygen. It has been studied to secure the performance by forming it on a material or a sealing material.

  On the other hand, when forming an organic functional layer constituting an organic EL element, various methods such as a vapor deposition method, a sputtering method, a CVD method, a PVD method, and a wet film formation method using a solvent are used. I can do it. Among these methods, from the viewpoints of simplifying the manufacturing process, reducing manufacturing costs, improving workability, and applying to flexible large-area devices such as backlights and illumination light sources, etc. It is known that a film forming method is advantageous. Further, when forming the first electrode, the second electrode, and the inorganic functional layer, a method of forming a film by a dry method under a vacuum environment such as vapor deposition, sputtering, CVD, PVD, or the like is known.

  In the present invention, the organic EL element includes a state in which a plurality of organic compound layers including a first electrode and a light-emitting layer and a second electrode are formed on a substrate and a state in which the substrate is closely sealed with a sealing member.

  As a base material used for manufacture of an organic EL element, a sheet-fed sheet base material and a strip | belt-shaped flexible base material are mentioned. The method of using the strip-shaped flexible substrate uses the roll-shaped strip-shaped flexible substrate, and uses the strip-shaped flexible substrate from the formation of the first electrode to the bonding of the sealing member. And it is the manufacturing method called roll-to-roll system which winds and collects in roll shape after bonding a sealing member, or cuts after manufacturing a sealing member, and manufactures an organic EL element. Since the roll-to-roll method is superior to the method using a single-wafer sheet base material in terms of productivity, studies are ongoing.

  For example, the organic functional layer is formed by coating and drying the organic functional layer forming coating liquid on the anode of the strip-shaped flexible substrate on which the anode is formed by applying the organic functional layer under an atmospheric pressure condition. A method of manufacturing an organic EL element by a roll-to-roll method is described in which a cathode is formed on a organic functional layer under reduced pressure conditions after being wound and stored, and sealed with a sealing member (Patent Document 1). reference.).

  On the strip-shaped flexible substrate, at least a first electrode, a hole transport layer, a light emitting layer, an electron injection layer, a second electrode, and a formed body of a sealing layer or a sealing film are arranged in this order. When a roll-to-roll method is used to produce an organic EL device having a roll-to-roll method, a method for providing a winding assisting member and winding and collecting is described in order to prevent damage to the film surface of the organic EL device. (See Patent Document 2).

  On the anode of the belt-like flexible substrate on which the anode is formed, the organic functional layer is applied and dried by applying the organic functional layer under an atmospheric pressure condition to form the organic functional layer. A method for producing an organic EL element by a roll-to-roll method in which a cathode is formed under reduced pressure on an organic functional layer after being wound and stored, and sealed with a sealing member having a water absorption of 1.0% or less is described. (See Patent Document 3).

  The roll-to-roll organic EL element manufacturing method described in Patent Documents 1 to 3 is separated from the wet film-forming process and the dry film-forming process. It's not the way.

The following problems have been found when manufacturing an organic EL element by continuously performing a wet film-forming process and a dry film-forming process.
1. When the dry film forming process is one unit, the amount of film forming raw material used for one film forming in the heating evaporation chamber is limited, so production is stopped when the film forming raw material is used up, and the dry film forming process is performed. Since it is necessary to start production again after cleaning, it is difficult to increase the productivity because the production becomes an amount unit of the film forming raw material.
2. When the dry film forming process is a plurality of units, the amount of film forming raw material used for one film formation in the heating evaporation chamber is limited by the unit, but the manufacturing time is increased as the amount of film forming raw material increases. However, since production must be stopped when the film forming material runs out, the dry film forming process must be cleaned, and then production must be started again. .
3. Since the production cannot be performed while the dry film forming process is being cleaned, the daily production amount is determined.
4). When replenishing the film forming material during the manufacturing process, the film forming chamber and the heating evaporation chamber are once returned to atmospheric pressure. When the production is resumed, the film forming chamber and the heating evaporation chamber are again evacuated. It takes time and the daily production is determined. In addition, since the wet film forming process before the dry film forming process is naturally stopped, in order to eliminate the process loss before the dry film forming process is stopped, a leader is connected in advance so that there is no work-in-process in the wet film forming process. Complicated work is required.
5). When the film forming material is replenished, when the film forming material is a highly deliquescent material (for example, a material for forming an electron injection layer), the remaining film forming material is rapidly recovered by returning the heating evaporation chamber to atmospheric pressure. When moisture is adsorbed on the substrate and evacuated again, it is difficult to remove this moisture, and it takes a very long time to achieve a high vacuum, and the daily production amount is determined.
6). If the electron injecting layer and the cathode are formed and formed while the degree of vacuum in the dry film forming process is low, not only the light emission efficiency is lowered, but also the performance such as the lifetime is deteriorated, causing a failure such as a dark spot.

  From such a situation, when manufacturing an organic EL element by a roll-to-roll method in a manufacturing process having a wet film forming process and a dry film forming process, the wet film forming process and the dry film forming process are separated. There is a need to develop a method for manufacturing an organic EL element that can be continuously formed in a dry film forming process without being affected by the amount of film forming raw material.

International Publication No. 06/100868 Pamphlet JP 2006-294536 A JP 2007-73332 A

  The present invention has been made in view of the above circumstances, and its purpose is to form a wet film formation when an organic EL element is manufactured by a roll-to-roll method in a manufacturing process having a wet film formation process and a dry film formation process. Provided is a method for manufacturing an organic EL element capable of continuously forming a film in the dry film forming process without dividing the process and the dry film forming process and without being affected by the amount of film forming raw material. That is.

  The above object of the present invention has been achieved by the following constitution.

1. In the manufacturing method of the organic electroluminescent element, the organic electroluminescent element is manufactured by a roll-to-roll method using a manufacturing process having a wet film forming process and a dry film forming process.
The dry film forming step uses a vapor phase film forming unit having a film forming chamber capable of independently controlling film forming conditions, a pressure adjusting chamber, and a heating evaporation chamber,
The vapor deposition unit maintains a vacuum in the deposition chamber, and is capable of separating and bonding the heating evaporation chamber and the deposition chamber.
A method for producing an organic electroluminescence element, wherein the film is continuously formed.

  2. 2. The organic electroluminescent element production according to 1 above, wherein the vapor phase film forming unit includes one film forming chamber, two or more heating evaporation chambers, and two or more atmospheric pressure adjusting chambers. Method.

  3. The vapor deposition unit has one deposition chamber, one heating evaporation chamber, and one atmospheric pressure adjustment chamber, and two or more vapor deposition units are arranged in series in the process. 2. The method for producing an organic electroluminescent element according to 1 above, wherein:

  4). The vapor phase film forming unit has one film forming chamber, one heating evaporation chamber, and one atmospheric pressure adjusting chamber, and the heating evaporation chamber has a replacement heating evaporation chamber. 2. A method for producing an organic electroluminescent element according to 1.

5). The atmospheric pressure adjusting chamber has a separation wall having a first opening and a second opening provided in the lower part inside the film forming chamber, and a third opening and a fourth opening provided in the upper part inside the heating evaporation chamber. A space composed of a separation wall having
A first shielding plate that opens and closes the first opening from the pressure adjustment chamber; a second shielding plate that opens and closes the second opening from the pressure adjustment chamber; and the third opening that opens the pressure adjustment chamber. 3. The organic material according to 2 above, comprising: a third shielding plate that opens and closes from the side; a fourth shielding plate that opens and closes the fourth opening portion from the pressure adjusting chamber side; and an exhaust pipe and an outside air introduction pipe. Manufacturing method of electroluminescent element.

6). The pressure adjusting chamber is a space composed of a separation wall having a first opening provided in the lower part inside the film forming chamber and a separation wall having a second opening provided in the upper part inside the heating evaporation chamber. Yes,
A shielding plate that opens and closes the first opening from the atmospheric pressure adjustment chamber; a second shielding plate that opens and closes the second opening from the atmospheric pressure adjustment chamber; and an exhaust pipe and an outside air introduction pipe. The manufacturing method of the organic electroluminescent element of said 2 or 3 to do.

  7). The film forming chamber includes an exhaust pipe, an outside air introduction pipe, a mask, and a transport roll that transports the surface side of the flexible base material on which the organic functional layer is formed in a substantially non-contact manner. The manufacturing method of the organic electroluminescent element of any one of said 1-6.

  8). 8. The organic electroluminescence element according to any one of 1 to 7, wherein the heating evaporation chamber includes a vapor deposition apparatus, an exhaust pipe, an outside air introduction pipe, and an inert gas introduction pipe. Manufacturing method.

  9. 9. The method for producing an organic electroluminescent element according to 1 above, further comprising a sealing material pasting step and a cutting step after the dry film forming step. The manufacturing method of organic electroluminescent element of this.

10. In the manufacturing method of the organic electroluminescent element of any one of said 1-9,
The dry film forming step uses a vapor phase film forming unit having a film forming chamber capable of independently controlling film forming conditions, a pressure adjusting chamber, and a heating evaporation chamber,
The dry film forming process is a process performed continuously for each step, and the step includes a first step and a second step following the first step.
The first step separates the heating evaporation chamber and the film formation chamber for adjustment for the next successive film formation while maintaining the vacuum of the film formation chamber,
In the second step, the adjusted heating evaporation chamber and the film forming chamber are joined together.

  11. The heating evaporation chamber and the film forming chamber are separated from each other after the atmospheric pressure adjusting chamber is returned to the atmospheric pressure in a state where the vacuum of the film forming chamber and the heating evaporation chamber is maintained. 10. The method for producing an organic electroluminescence element as described in 10 above, wherein:

  12 The bonding of the heating evaporation chamber and the film forming chamber is characterized in that the separated heating evaporation chamber is returned to atmospheric pressure, adjusted, bonded, and then the pressure adjusting chamber is evacuated. The manufacturing method of organic electroluminescent element of this.

  An organic EL device having at least a first electrode, at least one organic functional layer, and a second electrode on a flexible substrate is a manufacturing process having a wet film forming process and a dry film forming process. When manufacturing by the roll-to-roll method, the wet film forming process and the dry film forming process are not separated, and the film is continuously formed in the dry film forming process without being affected by the amount of the film forming raw material. The manufacturing method of the organic electroluminescent element which can be provided was able to be provided.

It is a schematic diagram of the manufacturing process of the organic EL element by the roll-to-roll system using a strip | belt-shaped flexible base material. It is the schematic of the electron injection layer formation process shown in FIG. It is the schematic of the part shown by P of FIG.2 (b). FIG. 3 is an enlarged schematic view of a shielding plate that shields a first opening of the film forming chamber shown in FIG. 2 when viewed from the film forming chamber side. It is the expansion schematic of the part shown by Q of FIG.2 (b). FIG. 3 is a flowchart for continuously performing film formation using the vapor deposition unit shown in FIG. 2. FIG. 2 is a schematic perspective view of the electron injection layer forming step shown in FIG. 1 in which two vapor phase film forming units are arranged in series with respect to a flexible substrate. FIG. 8 is an enlarged schematic cross-sectional view along the line GG ′ of the first vapor deposition unit 4a′1 shown in FIG. 7. It is the schematic of the electron injection layer formation process shown in FIG. 1 using the vapor-phase film-forming unit which has a heating evaporation chamber for replacement | exchange.

  The embodiment of the present invention will be described with reference to FIGS. 1 to 9, but the present invention is not limited to this.

  FIG. 1 is a schematic view of a manufacturing process of an organic EL element by a roll-to-roll method using a strip-shaped flexible substrate. In the following, a wet-type film was formed on a strip-shaped flexible base material (hereinafter also referred to as a flexible base material) having a plurality of first electrodes patterned and formed as an example. After forming the electron injection layer and the second electrode on the hole transport layer, the light emitting layer, and the electron transport layer by a dry method, the sealing member is pasted and cut. A method for producing an organic EL element by a roll-to-roll method will be described with reference to FIG.

  The roll-to-roll system in the present invention refers to a roll of a flexible base material that is fed intermittently or continuously while a submicron functional material layer is formed on the flexible base material. This is called the roll-to-roll method, including a method in which a part or all of the material is formed and wound again on a roll, or a method in which a functional material layer is formed and subsequently cut to obtain a final product. To do.

  In the present invention, when the electron injection layer and the second electrode are formed by dry deposition, the flexible substrate in the deposition chamber is transported without being exposed to the atmosphere, and the deposition is not stopped. The present invention relates to a method for manufacturing an organic EL element by a roll-to-roll method using a method of continuously forming a film.

  In the figure, 1 is formed by forming a hole transport layer, a light emitting layer, and an electron transport layer while continuously transporting a flexible substrate by a wet method, and an electron injection layer and a second electrode are dry methods. The manufacturing process of the organic EL element formed into a film and formed is shown. The manufacturing process 1 includes a supply process 2, a wet film forming process 3, a dry film forming process 4, a sealing process 5, and a cutting process 6.

  From the supplying step 2, the flexible base material 201a, in which the gas barrier film and the first electrode are already formed in this order, is wound around the winding core and supplied in a roll state, and the surface treatment apparatus (not shown) is supplied. To the hole transport layer forming step 3a. The formation position of the first electrode can be recognized by an alignment mark 201b (see FIG. 2) previously attached to the flexible substrate 201a.

  The wet film forming step 3 includes a hole transport layer forming step 3a for forming and forming a hole transport layer by a wet method, a light emitting layer forming step 3b for forming and forming a light emitting layer by a wet method, and a wet electron transport layer. And an electron transport layer forming step 3c for forming and forming a film by a method.

  In the wet film forming process 3, the alignment mark 201b (see FIG. 2) attached to the flexible substrate 201a conveyed from the supplying process 2 is read by the detecting device 4a16 (see FIG. 2), and the detecting device 4a16 (see FIG. 2). In accordance with the information of the reference), a hole transport layer, a light emitting layer, and an electron transport layer are sequentially formed on the first electrode in accordance with the pattern of the first electrode formed on the flexible substrate 201a. Thereafter, the film is transferred to the dry film forming step 4.

  In the hole transport layer forming step 3a, a hole transport layer forming coating solution is formed by a film forming apparatus in accordance with the pattern of the first electrode formed on the flexible substrate 201a, and the solvent in the coating film is formed. Is removed with a drying apparatus to form a hole transport layer.

  In the light emitting layer forming step 3b, the light emitting layer forming coating solution is applied to the region of the hole transport layer formed on the flexible substrate 201a conveyed from the hole transport layer forming step 3a by a film forming apparatus. A film is formed, and the solvent in the coating film is removed by a drying apparatus to form a light emitting layer.

  In the electron transport layer forming step 3c, a coating solution for forming an electron transport layer is formed on the light emitting layer formed on the flexible substrate 201a by a film forming apparatus, and the solvent in the coating film is formed by a drying apparatus. Removed to form an electron transport layer.

  The film forming apparatus used in the hole transport layer forming step 3a, the light emitting layer forming step 3b, and the electron transport layer forming step 3c constituting the wet film forming step 3 is not particularly limited as long as a pattern film can be formed. For example, there are various film forming apparatuses used for an inkjet method, a flexographic printing method, an offset printing method, a gravure printing method, a screen printing method, and the like. The use of these film forming apparatuses can be appropriately selected according to the material of the coating solution used in each step. Alternatively, after coating on the entire surface, pattern formation may be performed by a method such as wiping unnecessary portions with a member containing a solvent after each step.

  The number of film forming apparatuses and drying apparatuses used in the hole transport layer forming step 3a, the light emitting layer forming step 3b, and the electron transport layer forming step 3c shown in this figure can be appropriately arranged depending on the configuration of each layer. ing.

  The dry film forming process 4 includes an electron injection layer forming process 4a and a second electrode forming process 4b. In the dry film forming step 4, the alignment mark 201b (see FIG. 2) attached to the flexible substrate 201a on which the layers from the electron transport layer forming step 3c to the transported electron transport layer are formed is detected by the detection device 4a16 (FIG. 2). The electron injection layer and the second electrode are formed on the electron transport layer according to the information of the detection device 4a16 (see FIG. 2).

  The electron injection layer forming step 4a uses a vapor deposition unit 4a1 having a plurality of vapor deposition units and an accumulator 4a2. The vapor deposition unit 4a1 will be described in detail with reference to FIG.

  In the electron injection layer forming step 4a, the electron injection layer forming material is applied to the region of the electron transport layer formed on the flexible substrate 201a conveyed from the electron transport layer forming step 3c. Then, a mask is used to form a pattern into an electron injection layer.

  Film formation in the vapor phase film formation unit 4a1 is performed by using alignment marks 201b (see FIG. 2) provided on the flexible base material 201a formed with the electron transport layer transported from the electron transport layer forming step 3c. Detection is performed by a detection device 4a16 (see FIG. 2) disposed in the electron injection layer forming step 4a, and the mask and alignment mark 201b (see FIG. 2) of the vapor deposition unit 4a1 according to information of the detection device 4a16 (see FIG. 2). ) Is performed and the conveyance of the flexible base material 201a is stopped.

  While film formation is being performed, the flexible base material 201a conveyed from the electron transport layer formation step 3c is stored in the accumulator 4a2, and after film formation is completed, the length required for film formation is determined in the gas phase. This is performed by a method of transporting to the film forming unit 4a1.

  The size of the accumulator 4a2 can be appropriately set depending on the difference between the film formation rate in the electron transport layer formation step 3c and the film formation rate in the electron injection layer formation step 4a.

  In the second electrode formation step 4b, a vapor deposition unit 4b1 having a plurality of vapor deposition units and an accumulator 4b2 are used. The accumulator 4b2 is installed in a chamber (not shown) in which a vacuum state can be maintained and released, and the vapor deposition unit 4a1 and the vapor deposition unit 4b1 are joined via an air-to-vacuum connector. It is preferable. In this way, the flexible substrate 201a can be transported without being exposed to the atmosphere, and the electron injection layer and the second electrode can be formed.

  In the second electrode forming step 4b, the second electrode forming material is matched with the pattern of the first electrode formed on the flexible substrate 201a conveyed from the electron injection layer forming step 4a, and the second electrode forming material is formed in the vapor phase film forming unit. In 4b1, a second electrode is formed by forming a film in a pattern using a mask.

  Film formation by the vapor phase film formation unit 4b1 is performed by using an alignment mark 201b (see FIG. 2) provided on the flexible substrate 201a on which the electron injection layer transported from the electron injection layer formation step 4a is formed. Detection is performed by the arranged detection device 4a16 (see FIG. 2), and the mask of the vapor deposition unit 4b1 and the alignment mark 201b (see FIG. 2) are aligned according to the information of the detection device 4a16 (see FIG. 2). In this state, the conveyance of the flexible base material 201a is stopped. At this stage, an organic EL device having a structure of substrate / barrier layer / first electrode (anode) / hole transport layer / light emitting layer / electron transport layer / electron injection layer / second electrode (cathode) is completed.

  While the film is being formed, the flexible base material 201a conveyed from the electron injection layer forming step 4a is stored in the accumulator 4b2, and after film formation is completed, the flexible substrate 201a is conveyed to the sealing step 5. Is called.

  The size of the accumulator 4b2 can be appropriately set according to the difference between the film formation rate in the electron injection layer formation step 4a and the film formation rate in the second electrode formation step 4b.

  As a vapor deposition apparatus used to form the second electrode by forming the second electrode forming material, the vapor deposition apparatus 4a12C used in the electron injection layer forming step 4a (see FIG. 2). It may be the same as that described above, and can be appropriately selected depending on the type of the second electrode forming material.

  In the sealing step 5, an adhesive is applied to the entire surface of the flexible substrate 201a on which the second electrode is formed, on the side where the second electrode is formed, and a sealing member is bonded, and then a cutting step 6 to transport.

  In the cutting step 6, the alignment mark is read by a detection device (not shown), cut by a cutting device (not shown) according to information of the detection device (not shown), and cut into individual organic EL elements. The skeleton from which the organic EL element has been punched is wound up and collected by a winding device.

  In the present invention, the roll-to-roll method uses a strip-like flexible base material wound in a roll shape as shown in this figure, and cuts after sealing the sealing member from the formation of the first electrode and organically. It includes a method of manufacturing an EL element, or a method of manufacturing an organic EL element by cutting and then storing in a roll shape after pasting a sealing member.

  The manufacturing process of the organic EL device shown in FIG. 1 includes: base material / first electrode (anode) / hole transport layer (hole injection layer) / light emitting layer / electron transport layer / electron injection layer / second electrode (cathode). An example of an organic EL element having a layer structure of / adhesive / sealing member is shown, but other typical layer structures include the following structures.

(1) Substrate / first electrode (anode) / light emitting layer / second electrode (cathode) / adhesive / sealing member (2) substrate / first electrode (anode) / light emitting layer / electron transport layer / first 2 electrodes (cathode) / adhesive / sealing member (3) substrate / first electrode (anode) / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / second electrode (cathode) / adhesion Agent / Sealing Member (4) Base Material / First Electrode (Anode) / Hole Transport Layer (Hole Injection Layer) / Light Emitting Layer / Hole Blocking Layer / Electron Transport Layer / Cathode Buffer Layer (Electron Injection Layer) / Second electrode (cathode) / adhesive / sealing member (5) substrate / first electrode (anode) / anode buffer layer (hole injection layer) / hole transport layer / organic layer (light emitting layer) / hole Blocking layer / electron transport layer / cathode buffer layer (electron injection layer) / second electrode (cathode) / adhesive / sealing member If the light-emitting layer is a multilayer, the film forming / drying section is matched to the number of layers Units There needs to be disposed. The total thickness of the light emitting layer is not particularly limited, but is usually selected in the range of 2 nm to 5 μm, preferably 2 nm to 200 nm in consideration of the film homogeneity, the voltage required for light emission, and the like. Further, it is preferably in the range of 10 nm to 20 nm.

  The thickness of the electron transport layer is preferably in the range of 0.1 nm to 5 μm, although it depends on the material. The sheet resistance as the second electrode (cathode) is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 nm to 200 nm.

  FIG. 2 is a schematic view of the electron injection layer forming step shown in FIG. FIG. 2A is a schematic perspective view of the electron injection layer forming step shown in FIG. FIG. 2B is a schematic cross-sectional view along AA ′ in FIG.

  In the figure, reference numeral 4a1 denotes a vapor deposition unit. The vapor phase film formation unit 4a1 includes one film formation chamber 4a11, a first atmospheric pressure adjustment chamber 4a19A, a first heating evaporation chamber 4a12, a second heating evaporation chamber 4a13, and a second atmospheric pressure adjustment chamber 4a19B. Rail 4a14.

  The first heating evaporation chamber 4a12 and the second heating evaporation chamber 4a13 are separately separated from the film formation chamber 4a11, moved along the movement rail 4a14 (in the direction of the arrow in the figure), and again along the movement rail 4a14. It can be moved (in the direction of the arrow in the figure) and set in the film forming chamber 4a11.

  When the first heating evaporation chamber 4a12 and the second heating evaporation chamber 4a13 are set in the film forming chamber 4a11, the first heating evaporation chamber 4a12 and the second heating evaporation chamber are placed on the moving rail 4a14 on the film forming chamber 4a11 side. A stopper (not shown) is provided at a fixed position to facilitate alignment between 4a13 and the film forming chamber 4a11, and the first heating evaporation chamber 4a12 or the second heating evaporation chamber 4a13 is stopped at the fixed position. Thereafter, it is possible to raise the first heating evaporation chamber 4a12 or the second heating evaporation chamber 4a13 by a raising means (not shown) (for example, an oil jack, an air jack, etc.) and set it in the film forming chamber 4a11. .

  Reference numeral 4a15 denotes an air-to-vacuum connector disposed on the side where the flexible substrate 201a enters and the side where the flexible substrate 201a enters, whereby the degree of vacuum of the film formation chamber 4a11 when the flexible substrate 201a is conveyed. Can be maintained.

  Reference numeral 4a16 denotes a detection device disposed in the film forming chamber 4a11. The detection device 4a16 detects the alignment mark 201b indicating the position of the first electrode formed on the flexible substrate 201a, and based on the information of the detection device 4a16, the position with the mask in the film formation chamber 4a11 The film is formed by stopping the conveyance of the flexible base material 201a.

  Reference numeral 4a17 denotes an exhaust pipe for evacuating the film forming chamber 4a11 and is connected to a vacuum pump (not shown).

  Reference numeral 4a18 denotes an outside air introduction pipe for releasing the vacuum state in the film forming chamber 4a11, and an open / close valve (not shown) is provided on the way.

  Reference numeral 4a111 denotes a separation wall that has a first opening 4a112 and a second opening 4a113 disposed in the film formation chamber 4a11 and separates the first heating evaporation chamber 4a12 and the second heating evaporation chamber 4a13. Reference numeral 4a114 denotes a first shielding plate of the first opening 4a112. The first shielding plate 4a114 is attached to the ball screw shaft 4a115, and the first opening 4a112 can be opened and closed by moving the first shielding plate 4a114 (in the direction of the arrow in the figure) by the rotation of the ball screw shaft 4a115. . This figure shows a state in which the first opening 4a112 is closed. Reference numeral 4a116 denotes a motor for rotating the ball screw shaft 4a115.

  Reference numeral 4a117 denotes a second shielding plate of the second opening 4a113. The second shielding plate 4a117 is attached to the ball screw shaft 4a118, and the second opening 4a113 can be opened and closed by moving the second shielding plate 4a117 (in the direction of the arrow in the figure) by the rotation of the ball screw shaft 4a118. . This figure shows a state in which the second opening 4a113 is closed. Reference numeral 4a119 denotes a motor for rotating the ball screw shaft 4a118.

  Reference numeral 4a1110 denotes a mask disposed in the film forming chamber 4a11 at a position facing the first opening 4a112. Reference numeral 4a1111 denotes a mask disposed in the film forming chamber 4a11 at a position facing the second opening 4a113.

  Reference numeral 4a121 denotes an exhaust pipe disposed in the first heating evaporation chamber 4a12, which is connected to a vacuum pump for evacuating the first heating evaporation chamber 4a12.

  Reference numeral 4a122 denotes an outside air introduction pipe for releasing the vacuum state in the first heating evaporation chamber 4a12 when the first heating evaporation chamber 4a12 is cleaned, the film forming material is exchanged, etc., and an open / close valve (not shown) is provided in the middle. It is arranged.

  Reference numeral 4a123 denotes an inert gas introduction pipe of an inert gas introduction means for preventing the oxidation of the film forming raw material, and it is connected to an inert gas tank through an open / close valve (not shown) arranged in the middle. As the inert gas, N2, Ar, Ne, He or the like is introduced.

  Reference numeral 4a12C denotes a vapor phase film forming apparatus, which includes a cell 4a12C1 for placing and heating a film forming material, a mounting table 4a12C2, and an adjustment plate 4a12C3 for adjusting the area of the opening of the cell 4a12C1. Examples of the film forming raw material for the electron injection layer include strontium, aluminum, lithium fluoride, magnesium fluoride, and aluminum oxide.

  The vapor deposition apparatus 4a12C is not particularly limited. For example, a sputtering method, a reactive sputtering method, a molecular beam epitaxy method, a cluster ion beam method, an ion plating method, plasma in addition to a normal vapor deposition method by resistance heating or the like. A polymerization method, an atmospheric pressure plasma polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, or the like can be used, and can be selected and used as necessary.

  Reference numeral 4a131 denotes an exhaust pipe disposed in the second heating evaporation chamber 4a13, which is connected to a vacuum pump in order to make the second heating evaporation chamber 4a13 in a vacuum state.

  Reference numeral 4a132 denotes an outside air introduction pipe for releasing the vacuum state in the second heating evaporation chamber 4a13 when cleaning the second heating evaporation chamber 4a13, exchanging the film forming raw material for the electron injection layer, and the like. (Not shown) is provided.

  Reference numeral 4a133 denotes an inert gas introduction pipe of an inert gas introduction means for preventing the oxidation of the film forming raw material, and it is connected to an inert gas tank via an opening / closing valve (not shown) arranged in the middle.

  Reference numeral 4a13C denotes a vapor phase film forming apparatus, which includes a cell 4a13C1 in which a film forming material is put and heated, a mounting table 4a13C2, and an adjustment plate 4a13C3 for adjusting the area of the opening of the cell 4a13C1.

  4a124 has the 3rd opening part 4a125, and shows the separation wall which isolate | separates from the film-forming chamber 4a11. 4a19A is a first atmospheric pressure adjustment chamber composed of a separation wall 4a124, a separation wall 4a111, an outer wall 4a11A (see FIG. 5) of the film formation chamber 4a11, and an outer wall 4a12A (see FIG. 5) of the first heating evaporation chamber 4a12. Show.

  Reference numeral 4a126 denotes a third shielding plate of the third opening 4a125. The third shielding plate 4a126 is attached to the ball screw shaft 4a127, and the third opening 4a125 can be opened and closed by moving the third shielding plate 4a126 (in the direction of the arrow in the figure) by the rotation of the ball screw shaft 4a127. . This figure shows a state in which the third opening 4a125 is closed. Reference numeral 4a128 denotes a motor for rotating the ball screw shaft 4a127.

  Reference numeral 4a129 denotes an exhaust pipe for evacuating the first atmospheric pressure adjustment chamber 4a19A, which is connected to a vacuum pump.

  Reference numeral 4a1210 (refer to FIG. 6) denotes an outside air introduction pipe for releasing the vacuum of the first atmospheric pressure adjustment chamber 4a19A, and an open / close valve (not shown) is provided on the way.

  4a134 has the 4th opening part 4a135, and shows the separation wall which isolate | separates from the film-forming chamber 4a11. Reference numeral 4a19B denotes a second atmospheric pressure adjustment chamber composed of the separation wall 4a134, the separation wall 4a111, the outer wall of the film forming chamber 4a11, and the outer wall of the second heating evaporation chamber 4a13.

  4a136 shows the 4th shielding board of the 4th opening part 4a135. The fourth shielding plate 4a136 is attached to the ball screw shaft 4a137, and the third opening 4a125 can be opened and closed by moving the fourth shielding plate 4a136 (in the direction of the arrow in the figure) by the rotation of the ball screw shaft 4a137. . This figure shows a state in which the fourth opening 4a135 is closed. Reference numeral 4a138 denotes a motor for rotating the ball screw shaft 4a137.

  Reference numeral 4a139 denotes an exhaust pipe for evacuating the second atmospheric pressure adjustment chamber 4a19B, which is connected to a vacuum pump.

  Reference numeral 4a1310 denotes an outside air introduction pipe for releasing the vacuum of the second atmospheric pressure adjustment chamber 4a19B, and an open / close valve (not shown) is provided in the middle.

  By combining opening and closing of the first opening 4a112, the second opening 4a113, the third opening 4a125, and the fourth opening 4a135, the film formation chamber 4a11 to the first heating evaporation chamber 4a12 and the second heating evaporation chamber. 4a13 can be separated separately and set in the film forming chamber 4a11 again.

  The state of the vapor phase film forming unit 4a1 in the electron injection layer forming step 4a shown in this figure is that the film formation on the flexible substrate 201a using the first heating evaporation chamber 4a12 is completed, and then the flexible substrate In order to continue the film formation on the material 201a, the second heating evaporation chamber 4a13 is set in the film formation chamber 4a11 and the film formation on the flexible base material 201a is continued.

  Thereafter, in order to separate the first heating evaporation chamber 4a12 from the film forming chamber 4a11, the second opening 4a113 is closed by the shielding plate 4a114 in order to prevent the vacuum degree of the film forming chamber 4a11 from being lowered. The third opening 4a125 of the chamber 4a12 is closed by the third shielding plate 4a126. The second opening 4a113 is opened by the movement of the second shielding plate 4a117, and the fourth opening 4a135 is opened by the movement of the fourth shielding plate 4a136.

  A flow of continuously performing film formation using the vapor phase film formation unit 4a1 shown in this figure will be described with reference to FIG.

The vapor deposition unit capable of maintaining the vacuum state of the deposition chamber shown in the figure, separating the first heating evaporation chamber and the second heating evaporation chamber from the deposition chamber, and setting the deposition chamber again. The following effects can be given by using it.
1. By maintaining the vacuum state of the film formation chamber, it is possible to prevent moisture, oxygen, and other molecules that cause failure from entering the film formation chamber for the manufacture of organic EL elements. Oxygen gas can be eliminated more efficiently. It was possible to stabilize the pressure at the time of film formation, which is a factor of process variation, and to stabilize the film formation quality.
2. Since the first heating evaporation chamber and the second heating evaporation chamber can be separated from the film formation chamber and set again in the film formation chamber, they can be used alternately. For example, the first heating evaporation chamber is used. During the film formation, preparations for the next film formation such as cleaning of the second heating evaporation chamber, replenishment / heating of the film forming raw material, and pressure adjustment of the second heating evaporation chamber can be made. For this reason, it is possible to stop the film formation using the first heating evaporation chamber and start the film formation using the second heating evaporation chamber when the amount of film forming raw material in the first heating evaporation chamber becomes small. Can be formed continuously. As a result, the production rate of the dry film forming process does not become a rule at the overall production rate, so that the production efficiency by the roll-to-roll method can be improved.
3. Since the vacuum state of the film forming chamber is maintained, the switching to the second heating evaporation chamber is quickly performed, time loss is eliminated, and the production efficiency can be improved.
4). Since the cleaning of the first heating evaporation chamber and the second heating evaporation chamber is performed in a state separated from the film forming chamber, the foreign matter accompanying the cleaning is not attached to the flexible base material, and the occurrence of failure is reduced and the product quality is reduced. Stabilization is possible.

  FIG. 3 is a schematic view of a portion indicated by P in FIG. FIG. 3A is an enlarged schematic perspective view of a portion indicated by P in FIG. FIG. 3B is a schematic cross-sectional view taken along the line BB ′ of FIG.

  In the drawing, reference numeral 7 denotes a transport roll for transporting the flexible substrate 201a disposed inside the film forming chamber 4a11 (see FIG. 2). The transport roll 7 includes a pair of a transport roll 7a and a transport roll 7b.

  The transport roll 7a is composed of a holding part 7a1 and a body part 7a2 whose diameters are larger at both ends than the diameter of the body part 7a2, and the axial sectional shape is a concave shape. The transport roll 7b has a cylindrical shape with a constant diameter.

  The flexible substrate 201a is transported in the film forming chamber 4a11 (see FIG. 2) such that the back surface 201a1 (the surface on which the electron injection layer is not formed) of the flexible substrate 201a is in contact with the transport roll 7b. The both sides of the flexible substrate 201a are sandwiched between the holding portions 7a1 and the conveyance roll 7b at both ends of the conveyance roll 7a with the surface on which the electron injection layer is formed facing the conveyance roll 7a.

  Since the shape of the transport roll 7a is smaller than the diameter of the holding portion 7a1, the region where the first electrode to the light emitting layer are formed when both ends of the flexible base material 201a are sandwiched at both ends. The electron injection layer can be formed and formed on the flexible substrate 201a by transporting without contacting the transport roll 7a.

  In addition, in the manufacturing process 1 shown in FIG. 1, scratches on the film forming surface occur on the film forming surface side of the flexible base material 201 a of the transporting roll and accumulator used for transporting the flexible base material 201 a. It is preferable to use the conveyance roll 7a shown in this figure from the viewpoint of preventing the above.

  FIG. 4 is an enlarged schematic view of the shielding plate for shielding the first opening of the film forming chamber shown in FIG. 2 as viewed from the film forming chamber side. FIG. 4A is an enlarged schematic perspective view of the shielding plate for shielding the first opening of the film forming chamber shown in FIG. 2 as viewed from the film forming chamber side. FIG. 4B is a schematic cross-sectional view along CC ′ of FIG.

  In the figure, reference numeral 4a1141 denotes a seal member provided on the first shielding plate 4a114 in accordance with the size of the first opening 4a112 (see FIG. 2).

  When the first heating evaporation chamber 4a12 (see FIG. 2) is separated from the film formation chamber 4a11 (see FIG. 2) and moved, the first opening 4a112 (see FIG. 2) with the film formation chamber 4a11 (see FIG. 2) in a vacuum state. After the first shielding plate 4a114 is closed, the first shielding plate 4a114 is attracted to the film forming chamber 4a11 (see FIG. 2) side by returning the first atmospheric pressure adjusting chamber 4a19A (see FIG. 2) to the atmospheric pressure. Close contact with the separation wall 4a111. At this time, the degree of vacuum of the film forming chamber 4a11 (see FIG. 2) can be maintained by the seal member 4a1141.

  The second shielding plate 4a117 (see FIG. 2), the third shielding plate 4a126 (see FIG. 2), and the fourth shielding plate 4a136 (see FIG. 2) are also sealed in the same manner as the first shielding plate 4a114 shown in this figure. A member is disposed.

  FIG. 5 is an enlarged schematic view of a portion indicated by Q in FIG.

  In the figure, 4a12A indicates the outer wall of the first heating evaporation chamber 4a12 (see FIG. 2). Reference numeral 4a12B denotes a protrusion formed on the upper peripheral surface of the outer wall 4a12A of the first heating evaporation chamber 4a12 (see FIG. 2). Reference numeral 4a11A denotes an outer wall of the film forming chamber 4a11 (see FIG. 2). Reference numeral 4a11B denotes a recess formed on the lower peripheral surface of the outer wall 4a11A of the film forming chamber 4a11 (see FIG. 2). When the first heating evaporation chamber 4a12 (see FIG. 2) is once separated from the film forming chamber 4a11 (see FIG. 2) and set again in the film forming chamber 4a11 (see FIG. 2), the convex portions 4a12B and the concave portions 4a11B are formed. By setting to match, it is possible to maintain the degree of vacuum of the first atmospheric pressure adjustment chamber 4a19A (see FIG. 2).

  The shape of the convex portion 4a12B and the concave portion 4a11B is not particularly limited as long as the degree of vacuum in the first atmospheric pressure adjustment chamber 4a19A (see FIG. 2) can be maintained. This figure has shown the case where the shape of convex part 4a12B and recessed part 4a11B is a semicircle.

  There is no particular limitation on the method of manufacturing the convex portion 4a12B, for example, a method of embedding a seal member having a circular cross-sectional shape in the upper peripheral surface of the outer wall 4a12A, and a method of embedding a seal member having a semicircular cross-sectional shape of the upper peripheral surface of the outer wall 4a12A. And a method of processing the upper peripheral surface of the outer wall 4a12A into a convex shape and processing the surface with a seal member.

  There is no particular limitation on the method of manufacturing the recess 4a11B, and a method of forming a seal member having a recess matched to the shape of the protrusion 4a12B on the peripheral surface of the lower part of the outer wall 4a11A, and the peripheral surface of the lower part of the outer wall 4a11A are convex. Examples include a method of processing into a concave shape in accordance with the shape of 4a12B and processing the surface with a seal member.

  FIG. 6 is a flowchart for continuously performing film formation using the vapor phase film forming unit shown in FIG. In the manufacturing process shown in FIG. 1, using the vapor phase film formation unit 4a1 in the electron injection layer forming step on the light emitting layer formed on the flexible substrate 201a, the electrons are continuously formed on the light emitting layer. A method for forming the injection layer will be described.

Step 1 shows a state where the second heating evaporation chamber 4a13 of the vapor phase film forming unit 4a1 is used and the electron injection layer is formed on the light emitting layer formed on the flexible substrate 201a. At this time, the first opening 4a112 of the film forming chamber 4a11 is closed by the first shielding plate 4a114. The first heating evaporation chamber 4a12 is separated from the film formation chamber 4a11 after the first opening 4a112 is closed by the first shielding plate 4a114, the valve of the outside air introduction pipe 4a1210 is opened, and the first atmospheric pressure adjustment chamber 4a19A. After the atmospheric pressure is returned to the atmospheric pressure, the oil jacket (not shown) supporting the first heating evaporation chamber 4a12 is lowered and separated from the film forming chamber 4a11, and moved along the moving rail 4a14. In the separated first heating evaporation chamber 4a12, preparation for film formation of the next electron injection layer is performed in the following procedure.
1) The introduction of the inert gas from the vacuum pump and the inert gas introduction pipe 4a123 (see FIG. 2) connected to the exhaust pipe 4a121 (see FIG. 2) is stopped, and the outside air introduction pipe 4a122 (see FIG. 2) The valve is opened to release the vacuum in the first heating evaporation chamber 4a12.
2) After the vacuum is released, the cell 4a12C1 is cleaned, the film forming material for forming the electron injection layer is added, and the first heating evaporation chamber 4a12 is cleaned. Thereafter, the third opening 4a125 is closed by the third shielding plate 4a126, and a vacuum pump connected to the exhaust pipe 4a121 (see FIG. 2) is operated to match the degree of vacuum in the film formation chamber 4a11, and an inert gas is introduced. An inert gas is introduced from the tube 4a123 (see FIG. 2).
3) The film forming material contained in the cell 4a12C1 is heated. The opening of the cell 4a12C1 is in a closed state by moving the adjustment plate 4a12C3.

  In the vapor deposition unit 4a1, the degree of vacuum of the second heating evaporation chamber 4a13, the second atmospheric pressure adjustment chamber 4a19B, and the deposition chamber 4a11 is maintained, and in the second heating evaporation chamber 4a13, the fourth opening 4a135 and the component formation are maintained. In a state where the second opening 4a113 of the film chamber 4a11 is opened, a film is formed in a pattern on the light emitting layer through the mask 4a1111 to form an electron injection layer.

  The electron injection layer is formed by detecting the alignment mark 201b attached to the flexible base material 201a with the detection device 4a16, aligning the mask 4a1111 and the alignment mark 201b, and then forming the flexible base material 201a. The conveyance of 201a is temporarily stopped.

In Step 2, the remaining amount of the film forming raw material for the electron injection layer in the second heating evaporation chamber 4a13 of the vapor phase film forming unit 4a1 decreases, and the first heating evaporation chamber 4a12 prepared in Step 1 becomes the first heating evaporation chamber 4a11 in the film forming chamber 4a11. The state set to the 1 opening part 4a112 side is shown. The first heating evaporation chamber 4a12 can be set on the first opening 4a112 side of the film forming chamber 4a11 according to the following procedure.
1) The first heating evaporation chamber 4a12 prepared in Step 1 is moved along the moving rail 4a14 to a position where it comes into contact with the stopper.
2) At the position in contact with the stopper, the first heating evaporation chamber 4a12 is moved to the outer wall 4a11A (see FIG. 5) of the film forming chamber and the outer wall 4a12A of the first heating evaporation chamber 4a12 by an oil jacket (not shown) provided. (See FIG. 5) is raised to a position where it abuts. At this stage, the first atmospheric pressure adjustment chamber 4a19A is formed.
3) The valve of the outside air introduction pipe 4a1210 is closed in order to make the first atmospheric pressure adjustment chamber 4a19A into a vacuum.
4) The vacuum pump is operated to adjust the first atmospheric pressure adjustment chamber 4a19A to the degree of vacuum of the film formation chamber 4a11 through the exhaust pipe 4a129.

On the other hand, the second heating evaporation chamber 4a13 is separated by the following procedure.
1) When the remaining amount of the film forming raw material for the electron injection layer contained in the cell 4a13C1 approaches an amount that is insufficient for a single film forming amount, the second opening 4a113 of the film forming chamber 4a11 becomes the second shielding plate. 4a117 is moved and closed.
2) The fourth opening 4a135 of the second heating evaporation chamber 4a13 is closed by moving the fourth shielding plate 4a136. In addition, the opening of the cell 4a13C1 is closed by the adjustment plate 4a13C3.
3) When the operation of the vacuum pump connected to the exhaust pipe 4a139 is stopped, the valve of the outside air introduction pipe 4a1310 is opened to return the second atmospheric pressure adjustment chamber 4a19B to the atmospheric pressure.
4) The oil jacket supporting the second heating evaporation chamber 4a13 is lowered and separated from the film forming chamber 4a11, and moved along the moving rail 4a14.

  When the second opening 4a113 is closed, the flexible base 201a is transported to form an electron injection layer in the first heating evaporation chamber 4a12, and an alignment mark attached to the flexible base 201a. 201b is detected by the detection device 4a16, and the alignment between the mask 4a1110 and the alignment mark 201b is performed.

In Step 3, separation and movement of the film formation chamber 4a11 of the second heating evaporation chamber 4a13 are completed, and electrons are formed on the light emitting layer formed on the flexible substrate 201a using the first heating evaporation chamber 4a12. The state where the injection layer is formed is shown. The electron injection layer is formed by the following procedure.
1) Move the adjustment plate 4a12C3 to release the opening of the cell 4a12C1 of the vapor deposition apparatus 4a12C in the first heating evaporation chamber 4a12.
2) The first shielding plate 4a114 is moved to open the first opening 4a112.
3) The third shielding plate 4a126 is moved to open the third opening 4a125.
When 3) is completed, film formation for forming an electron injection layer is started on the light emitting layer through the mask 4a110.

  On the other hand, the separated second heating evaporation chamber 4a13 is prepared in the same procedure as that of the first heating evaporation chamber 4a12 shown in Step 1 in order to prepare for the formation of the next electron injection layer. Other reference numerals in the figure are the same as those in FIG.

  Hereinafter, by repeating Step 1 to Step 3, it is possible to continuously perform the film formation for forming the electron injection layer on the light emitting layer without stopping.

  The vapor deposition unit 4b1 in the second electrode formation step 4b shown in FIG. 1 is the same vapor deposition unit as the vapor deposition unit 4a1 used in the electron injection layer formation step 4a shown in FIGS. A method of continuously forming the second electrode by film formation is also possible by repeating Step 1 to Step 3 shown in FIG.

  FIG. 7 is a schematic perspective view of the electron injection layer forming step shown in FIG. 1 in which two vapor phase film forming units are arranged in series with respect to the flexible substrate. The difference from the electron injection layer forming step shown in FIG. 2 is as follows. The electron injection layer forming step shown in FIG. 2 is composed of a first heating evaporation chamber and a second heating evaporation chamber in one film forming chamber, and the first heating evaporation chamber and the second heating evaporation chamber are formed. A vapor phase film forming unit is used which can be separated and moved while maintaining a vacuum in the film chamber and set in the film forming chamber again. In contrast, in the electron injection layer forming process shown in this figure, the film forming chamber and the heating evaporation chamber are configured as a pair, and the heating evaporation chamber is separated from the film forming chamber while maintaining the vacuum of the film forming chamber. Two vapor phase film forming units that can be moved and set again in the film forming chamber are used in series with respect to the flexible substrate.

  In the figure, 4a 'indicates an electron injection layer forming step. The electron injection layer forming step 4a ′ includes a first vapor deposition unit 4a′1 arranged in series in the transport direction (arrow direction in the drawing) of the flexible substrate 201a, and the second vapor deposition unit 4a ′. The membrane unit 4a'2 is used. By alternately using the first vapor deposition unit 4a′1 and the second vapor deposition unit 4a′2, it is possible to continuously form films as in the vapor deposition unit shown in FIG. It is possible.

  The vapor deposition unit 4a′1 includes a deposition chamber 4a′11, a heating evaporation chamber 4a′12, an atmospheric pressure adjustment chamber 4a′19 (see FIG. 8), and a moving rail 4a′13. .

  The heating evaporation chamber 4a'12 is separated from the film forming chamber 4a'11, moves along the moving rail 4a'13 (in the direction of the arrow in the figure), and moves again along the moving rail 4a'13 (in the figure). And can be set in the film forming chamber 4a'11.

  When the heating evaporation chamber 4a′12 is set in the film formation chamber 4a′11 on the side of the film formation chamber 4a′11 of the moving rail 4a′13, the heating evaporation chamber 4a′12, the film formation chamber 4a′11, In order to facilitate positioning, a stopper (not shown) is disposed at a fixed position, and after the heating evaporation chamber 4a'12 stops at the fixed position, a rising means (not shown) (for example, oil jack, air) The heating evaporation chamber 4a'12 can be raised by a jack or the like and set in the film formation chamber 4a'11.

  Reference numeral 4a′14 denotes an air-to-vacuum connector disposed on the side where the flexible base material 201a enters and the side where the flexible base material 201a enters, thereby forming the film formation chamber when the flexible base material 201a is conveyed. The vacuum degree of 4a'11 can be maintained.

  Reference numeral 4a'15 denotes a detection device disposed in the film forming chamber 4a'11. The detection device 4a′15 detects the alignment mark 201b indicating the position of the first electrode formed on the flexible substrate 201a, and based on the information of the detection device 4a′15, the film formation chamber 4a′11. The film is aligned with the inner mask to stop the conveyance of the flexible base material 201a for film formation.

  Reference numeral 4a'16 denotes an exhaust pipe for evacuating the film forming chamber 4a'11, which is connected to a vacuum pump (not shown).

  Reference numeral 4a'17 denotes an outside air introduction pipe for releasing the vacuum state in the film forming chamber 4a'11, and an open / close valve (not shown) is provided on the way.

  Reference numeral 4a'121 denotes an exhaust pipe disposed in the heating evaporation chamber 4a'12, which is connected to a vacuum pump for making the inside of the heating evaporation chamber 4a'12 in a vacuum state.

  Reference numeral 4a′122 denotes an outside air introduction pipe for releasing the vacuum state in the heating evaporation chamber 4a′12 when cleaning the heating evaporation chamber 4a′12, replacing the film forming raw material, and the like. ) Is arranged.

  Reference numeral 4a'123 denotes an inert gas introduction pipe of an inert gas introduction means for preventing the oxidation of the film forming raw material, and it is connected to an inert gas tank via an open / close valve (not shown) arranged in the middle. The inert gas is the same as the inert gas used for the vapor deposition unit 4a1 shown in FIG.

  Reference numeral 4a'129 denotes an exhaust pipe for evacuating the atmospheric pressure adjusting chamber 4a'19 (see FIG. 8), which is connected to a vacuum pump.

  Reference numeral 4a'1210 denotes an outside air introduction pipe for returning the atmospheric pressure adjusting chamber 4a'19 (see FIG. 8) to the atmospheric pressure, and an open / close valve (not shown) is provided on the way.

  Since the configuration of the second vapor deposition unit 4a'2 is the same as that of the first vapor deposition unit 4a'1, description thereof will be omitted.

  A transport roll shown in FIG. 3 is used to transport the flexible substrate 201a in the first vapor deposition unit 4a′1 and the second vapor deposition unit 4a′2 shown in FIG.

  FIG. 8 is an enlarged schematic cross-sectional view taken along the line GG ′ of the first vapor deposition unit 4a′1 shown in FIG. The internal configuration of the second vapor deposition unit 4a′2 is the same as the internal configuration of the first vapor deposition unit 4a′1 shown in FIG.

  In the figure, 4a'111 has a first opening 4a'112, and shows a separation wall that separates the film forming chamber 4a'11 and the heating evaporation chamber 4a'12. Reference numeral 4a'113 denotes a first shielding plate of the first opening 4a'112. The first shielding plate 4a'113 is attached to the ball screw shaft 4a'114, and the first opening portion is moved by moving the first shielding plate 4a'113 by the rotation of the ball screw shaft 4a'114 (in the direction of the arrow in the figure). 4a'112 can be opened and closed. The structure of the first shielding plate 4a′113 is the same as that of the shielding plate shown in FIG. This figure shows a state in which the first opening 4a'112 is closed. 4a'115 represents a motor for rotating the ball screw shaft 4a'114.

  Reference numeral 4a′116 denotes a mask disposed in the film forming chamber 4a′11 at a position facing the first opening 4a′112.

  Reference numeral 4a'12C denotes a vapor phase film forming apparatus, which includes a cell 4a'12C1 for placing and heating a film forming material, a mounting table 4a'12C2, and an adjustment plate 4a'12C3 for adjusting the area of the opening of the cell 4a'12C1 have. The heating means for the cell 4a12C1 is the same as the heating means for the cell 4a12C1 shown in FIG.

  4a'124 has a second opening 4a'125, and shows a separation wall that separates the heating evaporation chamber 4a'12 and the film formation chamber 4a'11. 4a'19 is an atmospheric pressure adjusting chamber composed of a separation wall 4a'124, a separation wall 4a'111, an outer wall 4a'117 of the film forming chamber 4a'11, and an outer wall 4a'1211 of the heating evaporation chamber 4a'12. Indicates. The joint surface between the outer wall 4a'117 and the outer wall 4a'1211 is as shown in FIG.

  Reference numeral 4a'126 denotes a second shielding plate of the second opening 4a'125. The second shielding plate 4a'126 is attached to the ball screw shaft 4a'127, and the second opening portion is moved by moving the second shielding plate 4a'126 (in the direction of the arrow in the figure) by the rotation of the ball screw shaft 4a'127. 4a'125 can be opened and closed. This figure has shown the state which 2nd opening part 4a'125 was closed. Reference numeral 4a'128 denotes a motor for rotating the ball screw shaft 4a'127.

  The structure of the first shielding plate 4a'113 and the second shielding plate 4a'126 is the same as the structure of the first shielding plate 4a114 shown in FIG.

Next, in the electron injection layer forming step 4a ′ shown in FIG. 7, the electron injection layer is formed on the light emitting layer formed on the flexible substrate by the first vapor deposition unit 4a′1 through a mask. Procedure for depositing an electron injection layer in succession using the first vapor deposition unit 4a′1 and the second vapor deposition unit 4a′2 shown in FIG. The explanation is attached to.
Step 1: The heating evaporation chamber is separated in the second vapor phase film forming unit 4a'2 while maintaining the vacuum of the film forming chamber, and the heating evaporation chamber is cleaned and the film forming material for the electron injection layer is replenished.
Step 2: Move the heating evaporation chamber of the second vapor phase film forming unit 4a'2 and set it in the film forming chamber. Adjust the pressure in the heating evaporation chamber, heat the film forming raw material for the electron injection layer, and adjust the pressure in the pressure adjusting chamber. Do.
Step 3: Film formation in the first vapor deposition unit 4a′1 is stopped, and the heating evaporation chamber 4a′12 is separated from the film formation chamber 4a′11 while maintaining the vacuum of the film formation chamber 4a′11. .
Step 4: When the film formation of the first vapor deposition unit 4a'1 is stopped, the opening of the film formation chamber of the prepared second vapor deposition unit 4a'2, the opening of the heating evaporation chamber, the cell Are opened, and the formation of the electron injection layer is started through the mask.

  Thereafter, film formation can be continuously performed by repeating Step 1 to Step 4.

  Specific procedures for separation of the heating evaporation chamber, preparation of film formation of the separated heating evaporation chamber, setting of the heating evaporation chamber to the film formation chamber, and film formation of the electron injection layer are shown below.

(Separation of heating evaporation chamber 4a'12)
1) When the remaining amount of the film forming raw material for the electron injection layer contained in the cell 4a'12C1 approaches an amount that is insufficient for the film forming amount for one time, the first opening 4a'112 is formed in the first shielding plate 4a. '113 is moved and closed. The film forming chamber 4a′11 is in a state of maintaining a vacuum by closing the first opening 4a′112 with the first shielding plate 4a′113.
2) The second opening 4a′125 of the heating evaporation chamber 4a′12 is closed by moving the second shielding plate 4a′126. At the same time, the opening of the cell 4a'12C1 is closed by the adjusting plate 4a'12C3.
3) When the operation of the vacuum pump connected to the exhaust pipe 4a'129 of the atmospheric pressure adjustment chamber 4a'19 is stopped, the valve of the outside air introduction pipe 4a'1210 is opened to return the atmospheric pressure adjustment chamber 4a'19 to atmospheric pressure. .
4) The oil jacket (not shown) supporting the heating evaporation chamber 4a'12 is lowered, the heating evaporation chamber 4a'12 is separated from the film forming chamber 4a'11, and moved along the moving rail 4a'13.

(Preparation for film formation of separated heating evaporation chamber 4a'12)
1) Stop the introduction of the inert gas from the vacuum pump connected to the exhaust pipe 4a′121 (see FIG. 7) and the inert gas introduction pipe 4a′123 (see FIG. 7) of the heating evaporation chamber 4a′12. Then, the valve of the outside air introduction pipe 4a122 (see FIG. 7) is opened to return the heating evaporation chamber 4a'12 to atmospheric pressure.
2) After returning to atmospheric pressure, the cell 4a'12C1 is cleaned, the film forming material for the electron injection layer is replenished, and the heating evaporation chamber 4a'12 is cleaned. Thereafter, the second opening 4a′125 is closed by the second shielding plate 4a′126, and the vacuum pump connected to the exhaust pipe 4a′121 (see FIG. 7) is operated to vacuum the film formation chamber 4a′11. The inert gas is introduced from the inert gas introduction pipe 4a′123 (see FIG. 7) according to the degree.
3) The film-forming raw material for the electron injection layer contained in the cell 4a'12C1 is heated. The opening of the cell 4a′12C1 is moved to close the adjustment plate 4a′12C3. Thereafter, the heat evaporation chamber 4a′12 is moved along the moving rail 4a′13 in order to set the heating evaporation chamber 4a′12 in the film formation chamber 4a′11 according to the film formation state of the second vapor phase film formation unit 4a′2.

(Set of heating evaporation chamber 4a'12 to film formation chamber 4a'11)
1) Cleaning the heating evaporation chamber 4a'12 and replenishing the cell 4a'12C1 with the replenishment of the film forming raw material for the electron injection layer, the heating evaporation chamber 4a'12 kept in a vacuum state is moved to the moving rail 4a'13. And move to the position where it comes into contact with the stopper.
2) At the position in contact with the stopper, the heating evaporation chamber 4a'12 is arranged with the oil jacket provided, the outer wall 4a'117 of the film forming chamber, and the outer wall 4a'1211 of the first heating evaporation chamber 4a'12. The position is raised to the contact position (see FIG. 5). At this stage, the atmospheric pressure adjustment chamber 4a'19 is formed.
3) The valve of the outside air introduction pipe 4a′1210 is closed in order to make the pressure adjusting chamber 4a′19 into a vacuum.
4) The vacuum pump is operated and exhausted through the exhaust pipe 4a'129, and the pressure adjusting chamber 4a'19 is adjusted to the degree of vacuum of the film forming chamber 4a'11. Thereafter, when the film formation of the electron injection layer in the second vapor deposition unit 4a′2 is completed and the alignment between the flexible substrate 201a and the mask is completed, the first vapor deposition unit 4a. The film formation of the electron injection layer at '1 is started.

(Deposition of electron injection layer)
1) Positioning of flexible substrate 201a and mask At the stage where the first opening 4a'112 is closed, the flexible substrate 201a forms an electron injection layer in the second vapor deposition unit 4a'2. In order to form a film, it is transferred to the second vapor phase film forming unit 4a'2. Along with the conveyance, the alignment mark 201b attached to the flexible substrate 201a is detected by the detection device provided in the second vapor deposition unit 4a'2, and the second vapor deposition unit 4a'2 is detected. The alignment of the mask disposed in the film forming chamber and the alignment mark 201b is performed.
2) Move the adjustment plate 4a'12C3 to release the opening of the cell 4a'12C1 of the heating evaporation chamber 4a'12.
3) The first shielding plate 4a′113 is moved to open the first opening 4a′112.
4) Open the second opening 4a'125 by moving the second shielding plate 4a'126.
When 4) is completed, film formation for forming an electron injection layer is started on the light emitting layer through the mask 4a'116.

  The vapor deposition unit 4b1 in the second electrode formation step 4b shown in FIG. 1 is the same vapor phase as the first vapor deposition unit 4a′1 used in the electron injection layer formation step 4a ′ shown in FIGS. A film forming unit can be used. Further, the second electrode can be continuously formed and formed by the same method as the formation of the electron injection layer.

  FIG. 9 is a schematic view of the electron injection layer forming step shown in FIG. 1 using a vapor phase film forming unit having a replacement heating evaporation chamber. FIG. 9A is a schematic perspective view of the electron injection layer forming step shown in FIG. 1 using a vapor phase film forming unit having a replacement heating evaporation chamber. FIG. 9B is a schematic plan view of FIG.

  The difference from the electron injection layer forming step shown in FIG. 2 is as follows. The electron injection layer forming step shown in FIG. 2 is composed of a first heating evaporation chamber and a second heating evaporation chamber in one film forming chamber, and the first heating evaporation chamber and the second heating evaporation chamber are formed. A vapor phase film forming unit is used which can be separated and moved while maintaining a vacuum in the film chamber and set in the film forming chamber again. On the other hand, in the electron injection layer forming step 4a ″ shown in this figure, the film forming chamber and the heating evaporation chamber are configured as a pair, and the heating evaporation chamber is removed from the film forming chamber while maintaining the vacuum of the film forming chamber. This means that a vapor phase film forming unit is used that can move separately and set a replacement heating evaporation chamber in the film forming chamber.

  In the figure, 4a ″ 1 represents a vapor deposition unit. The vapor deposition unit 4a ″ 1 includes a deposition chamber 4a ″ 11, a heating evaporation chamber 4a ″ 12, and a replacement heating evaporation chamber 4a ″ 13. And a pressure adjusting chamber 4a'19 (see FIG. 8) and a moving rail 4a "14. The heating evaporation chamber 4a ″ 12 and the replacement heating evaporation chamber 4a ″ 13 can move along the moving rail 4a ″ 14 (in the direction of the arrow in the figure), and the heating evaporation chamber 4a ″. 12 and the replacement heating evaporation chamber 4a ″ 13 can be used alternately to form a film continuously as in the vapor phase film forming unit shown in FIG.

  Since the configuration of the vapor deposition unit 4a ″ 1 shown in this figure is the same as that of the vapor deposition unit 4a′1 shown in FIG. 7, a detailed report is omitted.

Next, from the state where the electron injection layer is formed on the light emitting layer formed on the flexible substrate by the vapor phase film forming unit 4a ″ 1 shown in FIG. A procedure for continuously forming the electron injection layer using the evaporation chamber 4a ″ 12 and the replacement heating evaporation chamber 4a ″ 13 will be described.
Step 1: The heating evaporation chamber 4a ″ 12 is separated while the vapor deposition unit 4a ″ 1 maintains the vacuum of the film formation chamber, and the heating evaporation chamber 4a ″ 12 is cleaned and the film forming raw material for the electron injection layer is replenished. Done.
Step 2: In accordance with the separation of the heating evaporation chamber 4a ″ 12, the heating evaporation chamber 4a ″ 13 for replacement that has been cleaned, replenished with the film forming raw material for the electron injection layer, heated, and adjusted in pressure is moved to the film forming chamber. Set and adjust the pressure in the pressure adjustment chamber.
Step 3: In accordance with the separation of the heating evaporation chamber 4a ″ 12, the position of the next film formation of the flexible substrate and the position of the mask are matched, and the conveyance of the flexible substrate is stopped.
Step 4: The opening of the film forming chamber, the opening of the heating evaporation chamber, and the opening of the cell are opened, and the film formation of the electron injection layer is started through the mask.

  Thereafter, film formation can be continuously performed by repeating Step 1 to Step 4. The specific procedure for separation of the heating evaporation chamber, preparation of film formation of the separated heating evaporation chamber, setting of the heating evaporation chamber to the film formation chamber, and film formation of the electron injection layer is shown in FIG. This is the same as in the case of the phase film forming unit 4a′1.

  In addition, the material used for the manufacturing method of the organic EL element of this invention is a well-known material described in the international publication 06/100908 pamphlet, Unexamined-Japanese-Patent No. 2006-294536, Unexamined-Japanese-Patent No. 2007-73332 etc. It is possible to use.

An organic EL device having at least a first electrode, at least one organic functional layer, and a second electrode on a flexible substrate is a manufacturing process having a wet film forming process and a dry film forming process. When manufacturing by the roll-to-roll method, the following effects can be obtained by using the vapor-phase film forming unit shown in FIGS.
1. Conventionally, the improvement in production efficiency by the roll-to-roll method has been rate-determined in the dry film forming process accompanying the replenishment of film forming materials, but the film forming chamber in the dry film forming process accompanying the replenishment of film forming materials. Since the stagnation of the entire heating evaporation chamber due to the release of the atmosphere is eliminated, the deposition chamber can always be placed under vacuum, and the production efficiency can be improved by the roll-to-roll method.
2. There is no stagnation in the dry film formation process due to the replenishment of film forming materials, and the wet film formation process and the dry film formation process are not separated. The film can be continuously formed just by doing this, and the original integrated production by the roll-to-roll method is possible, and the production efficiency can be improved.
3. Without being affected by the amount of film forming raw material, dirt in the heating evaporation chamber is also cleaned when the film forming raw material is replenished, so that no foreign matter adheres from the heating evaporation chamber and stable film formation is performed continuously. It became possible to manufacture organic EL elements with stable performance.
4). Because it is possible to switch to a preliminary heating vapor deposition chamber by using an accumulator for emergency troubles in the heating evaporation chamber during film formation, it is possible to stop the heating vapor deposition chamber of other material types, It was not necessary to open the film formation chamber to the atmosphere, and it was possible to greatly shorten the time to resume production, enabling stable operation of the process.

DESCRIPTION OF SYMBOLS 1 Manufacturing process 2 Supply process 201a Flexible base material 201b Alignment mark 3 Wet film formation process 4 Dry film formation process 4a, 4a ', 4a "Electron injection layer formation process 4a1, 4b1, 4a" 1 Gas phase film formation unit 4a ′ 1 First vapor deposition unit 4a′2 Second vapor deposition unit 4a11, 4a′11, 4a ″ 11 Deposition chamber 4a12, 4a′12 First heating evaporation chamber 4a′12, 4a ″ 12, 4a "13 Heating evaporation chamber 4a13 Second heating evaporation chamber 4a14, 4a'13, 4a" 14 Moving rail 4a15, 4a'14 Air-to-vacuum connector 4a16, 4a'15 Detector 4a17, 4a121, 4a129, 4a139, 4a131, 4a '16, 4a'121, 4a'129 Exhaust pipe 4a18, 4a122, 4a132, 4a1210, a1310, 4a'17, 4a'122, 4a'1210 Outside air introduction pipe 4a123, 4a133, 4a'123 Inert gas introduction pipe 4a125 Third opening 4a19A First pressure adjustment chamber 4a19B Second pressure adjustment chamber 4a'19 Pressure adjustment Chamber 4a111, 4a124, 4a134, 4a′111, 4a′124 Separation wall 4a112, 4a′112 First opening 4a113, 4a′125 Second opening 4a114, 4a′113 First shielding plate 4a1141 Seal member 4a117, 4a ′ 126 2nd shielding plate 4a12C, 4a13C, 4a'12C Vapor deposition apparatus 4a125 3rd opening 4a126 3rd shielding plate 4a136 4th shielding plate 4a11A, 4a12A, 4a'117, 4a'1211 Outer wall 4a12B Convex part 4a11B Concave part 4a135 4th opening 4a2,4b2 accumulator 4b second electrode forming step 5 sealing step 6 cutting step 7a, 7b conveyor rolls

Claims (12)

In the manufacturing method of the organic electroluminescent element, the organic electroluminescent element is manufactured by a roll-to-roll method using a manufacturing process having a wet film forming process and a dry film forming process.
The dry film forming step uses a vapor phase film forming unit having a film forming chamber capable of independently controlling film forming conditions, a pressure adjusting chamber, and a heating evaporation chamber,
The vapor deposition unit maintains a vacuum in the deposition chamber, and is capable of separating and bonding the heating evaporation chamber and the deposition chamber.
A method for producing an organic electroluminescence element, wherein the film is continuously formed.   2. The organic electroluminescence element according to claim 1, wherein the vapor phase film forming unit includes one film forming chamber, two or more heating evaporation chambers, and two or more atmospheric pressure adjusting chambers. Production method.   The vapor deposition unit has one deposition chamber, one heating evaporation chamber, and one atmospheric pressure adjustment chamber, and two or more vapor deposition units are arranged in series in the process. The method for producing an organic electroluminescent element according to claim 1, wherein:   The vapor phase film forming unit includes one film forming chamber, one heating evaporation chamber, and one atmospheric pressure adjusting chamber, and the heating evaporation chamber includes a replacement heating evaporation chamber. Item 2. A method for producing an organic electroluminescent element according to Item 1. The atmospheric pressure adjusting chamber has a separation wall having a first opening and a second opening provided in the lower part inside the film forming chamber, and a third opening and a fourth opening provided in the upper part inside the heating evaporation chamber. A space composed of a separation wall having
A first shielding plate that opens and closes the first opening from the pressure adjustment chamber; a second shielding plate that opens and closes the second opening from the pressure adjustment chamber; and the third opening that opens the pressure adjustment chamber. The third shielding plate that opens and closes from the side, the fourth shielding plate that opens and closes the fourth opening from the pressure adjusting chamber side, and an exhaust pipe and an outside air introduction pipe. Manufacturing method of organic electroluminescent element. The pressure adjusting chamber is a space composed of a separation wall having a first opening provided in the lower part inside the film forming chamber and a separation wall having a second opening provided in the upper part inside the heating evaporation chamber. Yes,
A shielding plate that opens and closes the first opening from the atmospheric pressure adjustment chamber; a second shielding plate that opens and closes the second opening from the atmospheric pressure adjustment chamber; and an exhaust pipe and an outside air introduction pipe. The manufacturing method of the organic electroluminescent element of Claim 2 or 3.   The film forming chamber includes an exhaust pipe, an outside air introduction pipe, a mask, and a transport roll that transports the surface side of the flexible base material on which the organic functional layer is formed in a substantially non-contact manner. The manufacturing method of the organic electroluminescent element of any one of Claim 1 to 6.   The organic electroluminescence according to any one of claims 1 to 7, wherein the heating evaporation chamber includes a vapor deposition apparatus, an exhaust pipe, an outside air introduction pipe, and an inert gas introduction pipe. Device manufacturing method.   The method for manufacturing an organic electroluminescent element according to claim 1, further comprising a sealing material bonding step and a cutting step after the dry film forming step. The manufacturing method of the organic electroluminescent element of description. In the manufacturing method of the organic electroluminescent element of any one of Claim 1 to 9,
The dry film forming step uses a vapor phase film forming unit having a film forming chamber capable of independently controlling film forming conditions, a pressure adjusting chamber, and a heating evaporation chamber,
The dry film forming process is a process performed continuously for each step, and the step includes a first step and a second step following the first step.
The first step separates the heating evaporation chamber and the film formation chamber for adjustment for the next successive film formation while maintaining the vacuum of the film formation chamber,
In the second step, the adjusted heating evaporation chamber and the film forming chamber are joined together.   The heating evaporation chamber and the film forming chamber are separated from each other after the atmospheric pressure adjusting chamber is returned to the atmospheric pressure in a state where the vacuum of the film forming chamber and the heating evaporation chamber is maintained. The method for producing an organic electroluminescence element according to claim 10, wherein   12. The bonding between the heating evaporation chamber and the film forming chamber is characterized in that the separated heating evaporation chamber is returned to atmospheric pressure, adjusted, bonded, and then the pressure adjusting chamber is evacuated. The manufacturing method of the organic electroluminescent element of description.

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