JP6468999B2 - 化学機械研磨パッドコンディショナ - Google Patents
化学機械研磨パッドコンディショナ Download PDFInfo
- Publication number
- JP6468999B2 JP6468999B2 JP2015510513A JP2015510513A JP6468999B2 JP 6468999 B2 JP6468999 B2 JP 6468999B2 JP 2015510513 A JP2015510513 A JP 2015510513A JP 2015510513 A JP2015510513 A JP 2015510513A JP 6468999 B2 JP6468999 B2 JP 6468999B2
- Authority
- JP
- Japan
- Prior art keywords
- protrusions
- pad conditioner
- chemical mechanical
- mechanical polishing
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims description 38
- 239000000126 substance Substances 0.000 title claims description 14
- 239000010432 diamond Substances 0.000 claims description 65
- 229910003460 diamond Inorganic materials 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 230000003746 surface roughness Effects 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims 2
- 230000003252 repetitive effect Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 17
- 239000002245 particle Substances 0.000 description 16
- 238000005520 cutting process Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 9
- 230000003750 conditioning effect Effects 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- ing And Chemical Polishing (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Description
本発明の実施形態の特徴及び利点は、パッドコンディショナの強化された性能である。実施形態では、コンディショナ毎の切削速度の再現性、及び、コンディショナの寿命にわたって一貫性のある切削速度が提供され、粗面化された表面へのダイヤモンドグリット結晶の付加及びCVDダイヤモンド層の付加後には欠陥が低減し、ここで、ダイヤモンドグリット種結晶は、マトリクス及びCVDの厚さの一部である。
Claims (10)
- 化学機械研磨パッドコンディショナであって、
複数の突出部が一体化されている前面を含む基材であって、前記複数の突出部は、前記前面に対して略垂直である前方方向に延びており、前記複数の突出部のそれぞれは、基材の床のレベルから延びる高さを有しており、前記基材の床のレベルからの前記突出部の高さが10マイクロメートル〜150マイクロメートルである、基材、
前記複数の突出部上のダイヤモンドの分散物であって、ダイヤモンドが12マイクロメートル未満の平均直径寸法を有しているダイヤモンドの分散物、並びに
少なくとも前記複数の突出部及び前記ダイヤモンドの分散物を覆う多結晶ダイヤモンドのコーティング
を備え、
前記複数の突出部のそれぞれは、2マイクロメートルから5マイクロメートルの二乗平均平方根の表面粗さの表面を有する、化学機械研磨パッドコンディショナ。 - 前記複数の突出部のそれぞれは、上面に形成されたメサを有しており、前記メサのそれぞれは、2マイクロメートルから5マイクロメートルの前記二乗平均平方根の表面粗さを有している、請求項1に記載の化学機械研磨パッドコンディショナ。
- 前記ダイヤモンドは、前記複数の突出部のメサのそれぞれに分散されている、請求項2に記載の化学機械研磨パッドコンディショナ。
- 前記複数の突出部のそれぞれは、最も高い最上のピークを有しており、各最も高い最上のピークは、他の突出部に対して繰り返し式ではないようにそれぞれの突出部に位置決めされている、請求項1に記載の化学機械研磨パッドコンディショナ。
- 前記複数の突出部は、或る密度を提供する繰り返しの離間パターンを有しており、前記密度は1平方mmあたり0.5〜5つの突出部である、請求項1に記載の化学機械研磨パッドコンディショナ。
- 前記ダイヤモンドは、6マイクロメートル未満の平均直径寸法を有している、請求項1に記載の化学機械研磨パッドコンディショナ。
- 前記複数の突出部は、第1の高さを有する突出部の一群、および異なる高さを有する突出部の一群を含んでいる、請求項1に記載の化学機械研磨パッドコンディショナ。
- 前記多結晶ダイヤモンドのコーティングの粗さは、0.1マイクロメートル〜2マイクロメートルである、請求項1に記載の化学機械研磨パッドコンディショナ。
- 前記ダイヤモンドのそれぞれは、1マイクロメートル〜15マイクロメートルの範囲の直径を有している、請求項1に記載の化学機械研磨パッドコンディショナ。
- 前記多結晶ダイヤモンドのコーティングは、前記ダイヤモンドの平均直径の50%〜100%の範囲の厚さを有している、請求項1に記載の化学機械研磨パッドコンディショナ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261642874P | 2012-05-04 | 2012-05-04 | |
US61/642,874 | 2012-05-04 | ||
PCT/US2013/039771 WO2013166516A1 (en) | 2012-05-04 | 2013-05-06 | Cmp conditioner pads with superabrasive grit enhancement |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015519211A JP2015519211A (ja) | 2015-07-09 |
JP2015519211A5 JP2015519211A5 (ja) | 2017-08-24 |
JP6468999B2 true JP6468999B2 (ja) | 2019-02-13 |
Family
ID=49514953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015510513A Active JP6468999B2 (ja) | 2012-05-04 | 2013-05-06 | 化学機械研磨パッドコンディショナ |
Country Status (8)
Country | Link |
---|---|
US (1) | US20150087212A1 (ja) |
EP (1) | EP2845221B1 (ja) |
JP (1) | JP6468999B2 (ja) |
KR (1) | KR102168330B1 (ja) |
CN (2) | CN104620356A (ja) |
SG (2) | SG11201407232YA (ja) |
TW (1) | TWI655057B (ja) |
WO (1) | WO2013166516A1 (ja) |
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US20140120724A1 (en) * | 2005-05-16 | 2014-05-01 | Chien-Min Sung | Composite conditioner and associated methods |
KR101161015B1 (ko) * | 2010-09-10 | 2012-07-02 | 신한다이아몬드공업 주식회사 | Cmp 패드 컨디셔너 및 그 제조방법 |
KR101916492B1 (ko) | 2011-03-07 | 2018-11-07 | 엔테그리스, 아이엔씨. | 화학 및 기계적 평탄화 패드 컨디셔너 |
KR102304574B1 (ko) | 2014-03-21 | 2021-09-27 | 엔테그리스, 아이엔씨. | 세장형 절삭 에지를 갖는 화학 기계 평탄화 패드 컨디셔너 |
CN114714245A (zh) * | 2016-04-06 | 2022-07-08 | M丘比德技术公司 | 化学-机械平面化垫调节器 |
JPWO2017203848A1 (ja) * | 2016-05-27 | 2019-03-22 | 株式会社アライドマテリアル | 超砥粒ホイール |
TWI616279B (zh) * | 2016-08-01 | 2018-03-01 | 中國砂輪企業股份有限公司 | Chemical mechanical polishing dresser and manufacturing method thereof |
DE102016014181B4 (de) * | 2016-11-28 | 2022-08-18 | KAPP Werkzeugmaschinen GmbH | Verfahren zum Abrichten einer Schleifschnecke mittels einer Abrichtrolle und Abrichtrolle |
CN106926148B (zh) * | 2017-02-08 | 2020-07-14 | 上海交通大学 | 利用化学气相沉积制备单层金刚石磨料工具的方法 |
TWI621503B (zh) * | 2017-05-12 | 2018-04-21 | Kinik Company Ltd. | 化學機械研磨拋光墊修整器及其製造方法 |
CN107553330B (zh) * | 2017-10-20 | 2019-07-12 | 德淮半导体有限公司 | 修整盘系统、化学机械研磨装置及修整盘脱落侦测方法 |
JP7079332B2 (ja) * | 2017-12-28 | 2022-06-01 | インテグリス・インコーポレーテッド | Cmp研磨パッドコンディショナ |
CN111699439A (zh) * | 2018-02-06 | 2020-09-22 | Asml荷兰有限公司 | 用于修复衬底支撑件的系统、装置和方法 |
US10814457B2 (en) | 2018-03-19 | 2020-10-27 | Globalfoundries Inc. | Gimbal for CMP tool conditioning disk having flexible metal diaphragm |
US20190351527A1 (en) * | 2018-05-17 | 2019-11-21 | Entegris, Inc. | Conditioner for chemical-mechanical-planarization pad and related methods |
US20200324386A1 (en) * | 2019-04-09 | 2020-10-15 | Entegris, Inc. | Segment designs for discs |
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-
2013
- 2013-05-06 EP EP13784423.9A patent/EP2845221B1/en not_active Not-in-force
- 2013-05-06 TW TW102116041A patent/TWI655057B/zh active
- 2013-05-06 CN CN201380034712.9A patent/CN104620356A/zh active Pending
- 2013-05-06 CN CN201910638879.5A patent/CN110328616A/zh active Pending
- 2013-05-06 KR KR1020147033668A patent/KR102168330B1/ko active IP Right Grant
- 2013-05-06 JP JP2015510513A patent/JP6468999B2/ja active Active
- 2013-05-06 US US14/398,960 patent/US20150087212A1/en not_active Abandoned
- 2013-05-06 SG SG11201407232YA patent/SG11201407232YA/en unknown
- 2013-05-06 WO PCT/US2013/039771 patent/WO2013166516A1/en active Application Filing
- 2013-05-06 SG SG10201609257TA patent/SG10201609257TA/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR102168330B1 (ko) | 2020-10-22 |
SG11201407232YA (en) | 2014-12-30 |
TW201350271A (zh) | 2013-12-16 |
SG10201609257TA (en) | 2016-12-29 |
TWI655057B (zh) | 2019-04-01 |
WO2013166516A1 (en) | 2013-11-07 |
KR20150005694A (ko) | 2015-01-14 |
CN110328616A (zh) | 2019-10-15 |
EP2845221A1 (en) | 2015-03-11 |
JP2015519211A (ja) | 2015-07-09 |
EP2845221A4 (en) | 2015-12-16 |
US20150087212A1 (en) | 2015-03-26 |
CN104620356A (zh) | 2015-05-13 |
EP2845221B1 (en) | 2017-09-20 |
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