五、新型說明： 【新型所屬之技術領域】 本創作係一種研磨墊修整器，特別是一種是用於化學機械 研磨之研磨墊修整器。 【先前技術】 化學機械研磨（Chemical Mechanical Polishing,簡稱 CMP)是一種晶圓代工產業所普遍採用的加工製程，其同時利 用機械力及化學反應來研磨矽晶圓，使其表面平坦化，故稱為 化學機械研磨。 请參照第1圖，為化學機械研磨製程示意圖，化學機械研 磨製程係將研磨漿料ιοί分布在研磨墊102的表面，所述研磨 漿料101含有適量的研磨粒子以及可與矽晶圓1〇〇產生化學反 應的化學藥品。研磨過程中，矽晶圓1〇〇本身係以適當的力量 平壓在研磨墊102的表面，透過矽晶圓1〇〇本身以及研磨墊 102的旋轉，即可對矽晶圓1〇〇的表面進行研磨拋光手續。 由於研磨過程中會不斷產生磨屑，而原先於研磨漿料1(H 中分散良好的研磨粒子也容易在研磨過程當中發生團聚，無論 是磨屑或是團聚的研磨粒子，其皆會降低研磨墊1〇2的研磨拋 光功效。因此必須額外透過一種研磨墊修整器1對研磨墊1〇2 進行修整’刮除研磨墊1 〇2表面附著的磨屑及不新鮮的研磨漿 料（slurry) ’甚至刮去研磨墊1〇2已光滑化的最表層，重新將 3 M406490 研磨墊102修整至良好的表面狀態。同時，在使用研磨塾修整 ϋ 1對研磨墊H)2進行修整的過程當中，亦可使剛注入於研磨 墊H)2上的新鮮研磨聚料1〇1均勾分散在研磨墊1〇2的表面， 使石夕晶圓1GG之化學機械研磨過程更加的均勻穩定。 傳統的研磨墊修整器係為實心，主要包含基板、鑽石接人 材料以及鑽石奸等。其巾，彻接合材觸f為乡元硬焊合 金’因此在硬焊過程中必須加熱至將近1〇〇〇〇c之高溫方能有 效接合鐵石粒子。在冷卻過程中，基板的中央部位往往會產生钃 程度輕重不-的勉曲現象’不僅影_磨墊的修整品質，也影 響化學機械研磨的精確度。 / 此外，傳統研磨墊修整器亦有將基板中央設計為非佈錯區 的形式，此時，由於基板中央的非佈鐵區的表面會較周圍的佈 鑽區低因而會形成-凹部。由於基板中央附近的離心力較外圍 弱無疋因基板中央设汁為非佈鑽區時所开少成的凹部或是因 前述翹親_形賴淺凹處，均讀研絲·生枝吸力鑛 或附著力’因此磨屑、團聚的研磨粒子抑或不新鮮的研磨衆料. 容易積聚在研磨墊修整器的中央而不易排出。 綜上，傳統的研磨墊修整器具有中央部位勉曲以及磨屑或 研磨漿料容易積聚在中央不易排出等問題。 【新型内容】 有鑑於此’本創作提出一種研磨墊修整器，適用於修整化V. New description: [New technical field] This creation is a polishing pad dresser, especially a polishing pad dresser for chemical mechanical polishing. [Prior Art] Chemical Mechanical Polishing (CMP) is a processing process commonly used in the foundry industry. It uses mechanical force and chemical reaction to polish the silicon wafer to flatten its surface. It is called chemical mechanical polishing. Please refer to FIG. 1 , which is a schematic diagram of a chemical mechanical polishing process. The chemical mechanical polishing process distributes the polishing slurry ιοί on the surface of the polishing pad 102. The polishing slurry 101 contains an appropriate amount of abrasive particles and can be bonded to the wafer.化学 Chemicals that produce chemical reactions. During the grinding process, the crucible wafer 1 itself is pressed against the surface of the polishing pad 102 with an appropriate force, and the crucible wafer 1 itself can be rotated through the crucible wafer 1 itself and the polishing pad 102. The surface is polished and polished. Since the grinding debris is continuously generated during the grinding process, the abrasive particles originally dispersed in the polishing slurry 1 (H in the H are easily agglomerated during the grinding process, whether it is grinding debris or agglomerated abrasive particles, which will reduce the grinding. Grinding and polishing effect of pad 1〇2. Therefore, it is necessary to additionally trim the polishing pad 1〇2 through a pad dresser 1 'scrape the abrasive pad attached to the surface of the pad 1 〇 2 and the fresh slurry (slurry) 'Even even scraping off the smoothest surface of the polishing pad 1〇2, and re-finishing the 3 M406490 polishing pad 102 to a good surface condition. At the same time, during the process of dressing the polishing pad H)2 with the grinding 塾The fresh abrasive material 1〇1 just injected on the polishing pad H)2 can also be dispersed on the surface of the polishing pad 1〇2, so that the chemical mechanical polishing process of the Shixi wafer 1GG is more uniform and stable. The traditional pad dresser is solid and consists mainly of substrates, diamond access materials and diamonds. The towel, the joint material touches f, is the township hard-weld alloy. Therefore, it must be heated to a high temperature of nearly 1 〇〇〇〇c during the brazing process to effectively bond the iron particles. During the cooling process, the central portion of the substrate tends to produce a tortuous phenomenon that is not too heavy. It not only affects the finishing quality of the polishing pad, but also affects the accuracy of chemical mechanical polishing. In addition, the conventional pad dresser also has a form in which the center of the substrate is designed as a non-distributed area. At this time, since the surface of the non-ironing area in the center of the substrate is lower than the surrounding cloth drilling area, a recess is formed. Since the centrifugal force near the center of the substrate is weaker than the outer periphery, the recessed portion which is opened when the center of the substrate is set to be a non-drilling area or the shallow concave portion of the aforesaid Adhesion 'Therefore, the abrasive particles, the agglomerated abrasive particles or the non-fresh grinding mass. It tends to accumulate in the center of the polishing pad conditioner and is not easily discharged. In summary, the conventional polishing pad conditioner has problems such as distortion of the central portion and easy accumulation of abrasive chips or abrasive slurry in the center. [New content] In view of this, this work proposes a polishing pad dresser suitable for trimming
S 4 M406490 學機械研磨製程中所使用之研磨墊，所述研磨墊修整器包含圓 形金屬基板、複數鑽石粒子以及結合層。其中，圓形金屬基板 包含至少一佈鑽區與一圓形穿孔，圓形穿孔的圓心係與圓形金 屬基板的圓心重合。每一鑽石粒子的表面具有一接著區與一裸 露區，且藉由結合層而固定於金屬基板之佈鑽區上，其中每一 鑽石粒子之接著區係嵌入結合層中，裸露區則是凸出於結合層 外0 此外，所述圓形穿孔具有一直徑，而圓形金屬基板則具有 一外徑，其中圓形金屬基板之外徑與_穿孔之直徑的比係在 1.5至3.0的範圍中。 本創作藉由在圓形金屬基板的中央設置特定尺寸的圓形 穿孔，解決了傳統研雜修整器所具有之中央部位容易躺以 及磨屑、團聚研絲子或研賴料容祕聚在巾心料排出 問題。 【實施方式】 睛參照第2A至第2D ® ’分別為本創作第—實施例之立 體圖、俯視圖'沿AA剖面線之剖面圖以及帛％圖中a區塊 =局部放大®，揭露-麵祕化學频研練程之研磨塾修 t器卜其包含圓形金屬基板Π、複數鑽石粒子12以及結合 層13。其令圓形金屬基板U包含至少一佈鑽區⑴與一圓形 穿孔m’圓形穿孔m _心係與圓形金屬基板u的圓心重 5 M406490 石粒子12的表面具有一接著區⑵與一臟: 且藉由結合層13 _定於_金屬基板U之佈鐵區⑴ 上’其中每-鑽石粒子12之接著區121係嵌入結合層η中， 裸露區122則是凸出於結合層13外。 本實施例之圓形金屬基板u的外徑係在1〇〇腿至u〇 mm之範圍中，而業界慣稱之鑽石碟（碟形修整器）規格係指 外徑為1〇8 mm。本實施例之圓形穿孔112係以雷射切割的方 式形成’圓形金屬基板11之外徑與圓形穿孔112之直徑的比^ 係在1.5至3.0的範圍中’其中又以2,〇至Μ為較佳。透過設 置適當尺寸之圓形穿孔112，明顯改善了中央部位翹曲以及磨 屑、團聚研絲子或經研磨製程錢後稍鮮的研雜料容易 吸附積聚在金屬基板中心不易排出的問題。 承上，當圓形金屬基板11之外徑與圓形穿孔112之直徑 的比大於3.0時，中央部位翹曲現象並無法獲得顯著改善；而 當圓形金屬基板11之外徑與圓形穿孔112之直徑的比小於1 5 ^ 時，則由於佈鑽區111的面積過小，修整功效將大打折扣，.且 也因為圓形金屬基板11的面積過小，導致無法直接適用於原 化學機械研磨設備，而必須額外設計固定治具，不利於成本控 制。 如第2D圖所示，本實施例之鑽石修整器1更可包含碳化 妮層14，透過碳化妮層14可使鐵石粒子12更加緊密地結合S 4 M406490 relates to a polishing pad used in a mechanical polishing process, the polishing pad conditioner comprising a circular metal substrate, a plurality of diamond particles, and a bonding layer. Wherein, the circular metal substrate comprises at least one drilling area and a circular perforation, and the center of the circular perforation coincides with the center of the circular metal substrate. The surface of each diamond particle has a contiguous region and a bare region, and is fixed on the diamond-drilling region of the metal substrate by the bonding layer, wherein each diamond particle is embedded in the bonding layer, and the exposed region is convex. In addition, the circular perforations have a diameter, and the circular metal substrate has an outer diameter, wherein the ratio of the outer diameter of the circular metal substrate to the diameter of the perforation is in the range of 1.5 to 3.0. in. By creating a circular perforation of a specific size in the center of the circular metal substrate, the present invention solves the problem that the central part of the conventional grinding trimmer is easy to lie and wear debris, agglomerate or the material to be gathered in the towel. The problem of heart discharge. [Embodiment] The reference to the 2A to 2D ® ' respectively is the perspective view of the first embodiment, the top view of the creation, the section along the AA section line, and the % block of the % diagram = partial magnification®, revealing - face secret The grinding process of the chemical frequency training process comprises a circular metal substrate Π, a plurality of diamond particles 12 and a bonding layer 13. The circular metal substrate U comprises at least one diamond-drilling zone (1) and a circular perforation m' circular perforation m _ core and the center of the circular metal substrate u. 5 M406490 The surface of the stone particle 12 has a contiguous zone (2) and a dirty: and by the bonding layer 13 _ set on the slab area (1) of the _ metal substrate U, wherein each of the diamond regions 12 is embedded in the bonding layer η, the exposed region 122 is protruded from the bonding layer 13 outside. The outer diameter of the circular metal substrate u of the present embodiment is in the range of 1 leg to u 〇 mm, and the conventionally known diamond dish (disc dresser) specification refers to an outer diameter of 1 〇 8 mm. The circular perforation 112 of the present embodiment is formed by laser cutting. The ratio of the outer diameter of the circular metal substrate 11 to the diameter of the circular perforation 112 is in the range of 1.5 to 3.0, which is again 2, It is better. By providing a circular through hole 112 of an appropriate size, the problem of warpage at the center portion, grinding debris, agglomerated wire, or slightly grinded material after the grinding process is easily absorbed and accumulated in the center of the metal substrate is not significantly improved. In the case where the ratio of the outer diameter of the circular metal substrate 11 to the diameter of the circular through hole 112 is more than 3.0, the central portion warping phenomenon cannot be remarkably improved; and when the circular metal substrate 11 has the outer diameter and the circular perforation When the ratio of the diameter of 112 is less than 1 5 ^, since the area of the drilled area 111 is too small, the trimming effect is greatly reduced, and also because the area of the circular metal substrate 11 is too small, it is not directly applicable to the original chemical mechanical polishing apparatus. , and must design additional fixtures, which is not conducive to cost control. As shown in Fig. 2D, the diamond dresser 1 of the present embodiment may further comprise a carbonized layer 14, which allows the iron particles 12 to be more tightly bonded through the carbonized layer 14.
S 6 M406490 於結合層13中而不易脫落，有助於提高鑽石修整器1之使用 壽命。 再如第2D圖所示，本實施例更可在結合層13之表面彼 覆耐腐蝕層15，耐腐蝕層15係選自電鑛鎳、陶瓷鍍膜、類鑽 碳膜及高分子膜之一，其可有效防止結合層13被研磨漿料所 腐蝕，因此有助於提高鑽石修整器i之使用壽命。 請參照第3A至第3C圖，為本創作第二實施例之俯視圖、 沿BB剖面線之剖面圖以及第3B圖中B區塊之局部放大圖， 揭露一種研磨墊修整器2。本實施例與第一實施例之主要差異 在於圓形金屬基板21係包含複數個佈鑽區2Π，且佈鑽區211 彼此係以分隔區213相間隔而呈同心帶狀排列，且每一佈鑽區 211之寬度W係在1〇|11111至3〇mm之範圍中。 清參照第4 ®，為本創作第三實施例之俯視圖，揭露一種 研磨墊修魏3。本實施例與第—實施例之主要差異在於圓形 金屬基板31包含複數個佈鑽區311 ’每個佈鑽區3ιι彼此以 分隔區313相間隔。 雖然本創作已以前雜佳實施示，並翻以限定 本創作’贿熟習此㈣者，在錢離本創作之精神和範圍 ^，當可作各種之更動與修改。如上述的轉，都可以作 ，而不會破壞此創作的精神。因此本創作之保 邊範圍當視_之㈣專職_界定者為準。 7 M406490 【圖式簡單說明】 第1圖為化學機械研磨製程示意圖。 第2A圖為本創作第一實施例之立體圖。 第2B圖為本創作第一實施例之俯視圖。 第2C圖為第2B圖中沿AA剖面線之剖面圖 第2D圖為第2C圖中A區塊之局部放大圖。 第3A圖為本創作第二實施例之俯視圖。 第3B圖為第3A圖中沿BB剖面線之剖面圖 第3C圖為第3B圖中B區塊之局部放大圖。 第4圖為本創作第三實施例之俯視圖。 【主要元件符號說明】 1 · · •···研磨墊修整器 100 · •···碎晶圓 101 · .·..研磨漿料 102 · •_·••研磨塾 11 · •···圓形金屬基板 111 · • · · ·佈鑽區 112 · •···圓形穿孔 12 · .· · ·鑽石粒子 121 · •···接著區 122 · •···裸露區 13 · •···結合層 M406490The S 6 M406490 is not easily detached in the bonding layer 13 to help improve the service life of the diamond dresser 1. Further, as shown in FIG. 2D, the embodiment further covers the surface of the bonding layer 13 with a corrosion-resistant layer 15 selected from the group consisting of nickel ore, ceramic coating, diamond-like carbon film and polymer film. It can effectively prevent the bonding layer 13 from being corroded by the polishing slurry, thereby contributing to the improvement of the service life of the diamond dresser i. Please refer to FIGS. 3A to 3C for a plan view of a second embodiment of the present invention, a cross-sectional view taken along line BB, and a partial enlarged view of block B in FIG. 3B, and a polishing pad conditioner 2 is disclosed. The main difference between this embodiment and the first embodiment is that the circular metal substrate 21 comprises a plurality of cloth drilling zones 2, and the diamond drilling zones 211 are arranged in a concentric band with the partitioning zones 213 spaced apart, and each cloth is arranged. The width W of the drill zone 211 is in the range of 1 〇 |11111 to 3 〇 mm. Referring to Chapter 4, a top view of the third embodiment of the present invention, a polishing pad repairing 3 is disclosed. The main difference between this embodiment and the first embodiment is that the circular metal substrate 31 includes a plurality of cloth drilling regions 311' each of which is spaced apart from each other by a partitioning zone 313. Although this creation has been shown in the past, and it has been limited to the author's practice of bribery (4), in the spirit and scope of the creation of the money, when various changes and modifications can be made. As mentioned above, it can be done without destroying the spirit of this creation. Therefore, the scope of this creation is subject to the definition of _ (four) full-time _ defined. 7 M406490 [Simple description of the diagram] Figure 1 is a schematic diagram of the chemical mechanical polishing process. Fig. 2A is a perspective view of the first embodiment of the creation. Fig. 2B is a plan view of the first embodiment of the creation. 2C is a cross-sectional view taken along line AA of FIG. 2B. FIG. 2D is a partial enlarged view of block A in FIG. 2C. Fig. 3A is a plan view of the second embodiment of the creation. Fig. 3B is a cross-sectional view taken along line BB of Fig. 3A, and Fig. 3C is a partially enlarged view of block B in Fig. 3B. Figure 4 is a plan view of the third embodiment of the creation. [Explanation of main component symbols] 1 · · •···Material pad dresser 100 ·····Crushing wafer 101 ····. Grinding slurry 102 · •_·•• Grinding 塾11 · •··· Round metal substrate 111 · · · · · Drilling area 112 · •··· Round perforation 12 · ·· · · Diamond particles 121 · •···Next area 122 · •···Naked area 13 · •· ··Combination layer M406490
14 · · · · •碳化鈮層 15 · · · · •抗腐触層 2..... •研磨墊修整器 21 . . · · •圓形金屬基板 211 · · · · •佈鑽區 212 · · · · •圓形穿孔 213 · · · · •分隔區 22 · · · · •鑽石粒子 221 · · · · •接著區 222 · · · · •裸露區 23 · · · · •結合層 24 · · · · •碳化鈮層 3..... •研磨墊修整器 31 · · · · •圓形金屬基板 311 · · · · •佈鑽區 312 · · · · •圓形穿孔 313 · · · · •分隔區 32 · · · · •鑽石粒子 33 · · · · •結合層14 · · · · • Carbide layer 15 · · · · • Anti-corrosion contact layer 2... • Polishing pad dresser 21 . . . • Round metal substrate 211 · · · · • Drilling area 212 · · · · • Round perforation 213 · · · · · Separation area 22 · · · · • Diamond particles 221 · · · · • Adjacent area 222 · · · · • Exposed area 23 · · · · • Bonding layer 24 · · · · • Carbide layer 3..... • Pad dresser 31 · · · · • Round metal substrate 311 · · · · • Drilling area 312 · · · · • Circular perforation 313 · · · · • Separation area 32 · · · · • Diamond particles 33 · · · · • Bonding layer