201243929 六、發明說明： 【發明所屬之技#f領域】 [0001] 本發明關於種化學機械研磨修整器，尤指一種使用壽 命長及優異修整效果的化學機械研磨修整器。 【先前技術】 [0002] 於半導體晶圓製造過程之中，係廣泛使用化學機械研磨 (Chemical mechanical polish，簡稱CMP)製程對石夕 晶圓進行研磨，令矽晶圓表面達平坦化。常見的化學機 械研磨製程為使用一固定在一旋轉台的研磨墊（或抛光塾 ^ )’接觸並施力於一承載在一可自旋之載具上的石夕晶圓， 於研磨時，該載具與該旋轉台將進行轉動且提供一研磨 漿料至該研磨墊。一般而言，研磨所造成的碎屑與研磨 漿料將累積在研磨墊中的孔洞，令研磨墊產生耗損且導 致其對於晶圓的研磨效果下降，因此，係需要使用一修 整器（Conditioner)移除研磨墊中殘留的碎屑與研磨漿 料。 〇 [0003]習知用於化學機械研磨製程的修整器如中華民國發明專 利公告第541226號，揭示一種具等高化磨料顆粒之研磨 工具及其製造方法，其研磨工具包括一基材、一結合劑 層與複數個磨料顆粒，該基材上之一磨粒結合面上形成 有至少一磨粒結合溝，該結合劑層設於該磨粒結合溝， 供該磨料顆粒結合在該基材上，藉由該磨粒結合溝之設 δ十’可令該磨料顆粒的排列取向一致並具有相近的高度 ，以提升修整時的穩定性。另，曰本專利特開 2007-268666號揭示一種化學機械研磨墊修整器，包括 100113648 表單編號Α0101 第3頁/共22頁 1002022817-0 201243929 -金屬基材與-研磨部，該研磨部由複數個研磨顆粒埋 設於位在該金屬基材周_孔㈤之中，且該研磨顆粒排 列為同心圓圖樣，其同樣藉由該孔洞的設計，讓該研磨 顆粒之間的高度差得以縮小，進而提供穩定的修整速率 。此外，如中華民國發明專利公開第200425993號揭 示一種研磨墊整理器，包括有-底層、-固定層以及複 數個鑽石顆粒，該鑽石顆粒的數量係由外向内遞減而呈 同心圓方式之排列，如此可令該鑽石顆粒的磨耗率一致 ’而延長該整理器的使用壽命。 剛就上述先前技術而言，其研磨顆粒均以環形方式排列， 故修整器的中央區域之研磨難數量將少於外圍區域， 當實際應㈣’修整㈣中央區域並無法對研磨塾進行 修整，因此，其修整效率不佳。再者，由於外圍區域的 研磨顆粒數量高於巾央區域，亦會造成其研磨顆粒數量 分佈内外差異甚大’進而產生施壓不均，修整時穩定性 不佳的問題。 [_❿如中華民國發明專利公告第575477號，則揭示一種化 學機械研磨調節11 ’包括—支持構件與複數個設於該支 持構件上之硬質砥粒，該硬質砥粒呈規則排列，其中， 該硬質紙粒可排列為棋盤狀、蜂窩狀或放射狀。然在 研磨時，其排列於最外緣的硬質砥粒相較於排列在靠近 内緣之硬質峨粒，將承受較大的衝擊力道，同時，因其 最外緣的硬質砥粒之排列取向並非與硬質砥粒的行進方 向一致，因此，該硬質砥粒於研磨時將容易發生破裂， 將使得調節器之使用壽命縮短。 100113648 表單編號A0101 第4頁/共22頁 1002022817-0 201243929 【發明内容】 ’ [0006] 本發明的主要目的，在於解決習知化學機械研磨修整器 ’由於研磨顆粒係以環形方式排列而使修整器中央區域 之研磨效果不佳的問題，以及研磨顆粒呈規則排列之修 整器’因外緣之研磨顆粒的排列取向相異於轉動方向， 令修整時外緣之研磨顆粒無法承受較大之切削速度而容 易發生破裂之問題。 [0007] 為達上述目的，本發明提供一種化學機械研磨修整器， 包括一承載體、一中央研磨部與至少一周圍研磨部，該 〇 承載體具有一中央區域與—設於該中央區域外之周邊區 域，該中央研磨部固定於該承載體之中央區域，且該中 央研磨部具有複數個以一矩陣圖樣排列之第一研磨顆粒 ，該周圍研磨部固定於該承載體之周邊區域，且該周圍 研磨部具有複數個以一環形圖樣排列且圍繞該中央研磨 部之第二研磨顆粒。 [0008]經由以上可知，本發明化學機械研磨修整器相較於習知 技術達到的有益效果在於： 剛1.本《化學韻韻健巾央研磨部外設 有該周圍研料’透過純形圖樣之制方向與該 修整器加工時的轉動方向相同，可避免因切削速度 較大而發生破裂之問題，故可提升該修整器的使用 壽命，並可大幅降低化學機械研磨製程之成本開銷 100113648 2.同時藉由在該周圍研磨部内之設置該中央研磨部 ，可經由呈矩陣圖樣排列的該第一研磨顆粒增加該 表單編號 A0101 第 5 頁/共 22 S ,002022817-0 201243929 修整器與研磨墊之間的接觸面積，令修整加工可更 加有效率，且減少化學機械研磨製程所需的時間。 【實施方式】 [0010] [0011] [0012] [0013] 100113648 有關本發明化學機械研磨修整器的詳細說明及技術内容 ，現就配合圖式說明如下： 請先參閱『圖1』與『圖2』，分別為本發明化學機械研 磨修整器一實施例之俯視圖及剖面圖，該修整器包括一 承載體10、一1ί7央研磨部20與至少一周圍研磨部，該 承載體10包含有一基材11與一設置於該基材丨丨上的結合 層12，且該結合層12具有一中央區域121與一設於該中央 區域121之外的周邊區域122。該中央研磨部2〇與該周圍 研磨部30分別包括複數個第一研磨顆粒21與複數個第二 研磨顆粒31，其中，該第一研磨顆粒21係固定於該結合 層12之中央區域1 21，而該第二研磨顆粒31則固定於該結 合層12之周邊區域122，且該第一研磨顆粒21以一矩陣圖 樣排列，該第二研磨顆粒31以一環形圖樣排列。 於本實施例中’該周圍研磨部30的數量為一圈，然本發 明並不限於此，該周圍研磨部30的數量可為多圈，而不 同之該周圍研磨部30係具有相異半徑而呈一同心圓圖樣 ’此外，相鄰的該周圍研磨部3〇的第二研磨顆粒31係較 佳呈交錯鋸齒狀排列’也就是說，其中—該周圍研磨部 30的第二研磨顆粒31設置於相鄰的另一該周圍研磨部 中相鄰之該第二研磨顆粒31之間的對應位置。 請繼續參閱『圖3-1』與『圖4』，分別為本發明化學機 械研磨修整器另一實施例之俯視圖及剖面圖，該修整器 1002022817-0 表單編號Α0101 第6頁/共22頁 201243929 〇 [0014] 亦包括一承載體10、一中央研磨部2〇、一外圈研磨部30a 及一内圈研磨部30b，該承載體1〇包含有一基材11與一設 置於該基材11上的結合層12，該結合層12具有一中央區 域121與一設於該中央區域121之外的周邊區域122。該 中央研磨部20包括複數個第一研磨顆粒21，且該外圈研 磨部30a及該内圈研磨部30b分別包括複數個外圈研磨顆 粒3 la與複數個内圈研磨顆粒31b，該第一研磨顆粒21固 定於該結合層12之中央區域121，而該外圈研磨部30a及 該内圈研磨部30b則固定於該結合層12之周邊區域122。 該第一研磨顆粒21以一矩陣圖樣排列，該外圈研磨部30a 與該内圈研磨部30b則分別以一環形圖樣排列。如『圖 3-1』所示，該外圈研磨部30a之半徑大於該内圈研磨部 30b ’該外圈研磨部30a與該内圈研磨部30b因而形成一 同心圓圖樣。此外，在本實施例中，該内圈研磨顆粒30b 與該外圈研磨顆粒30a較佳地呈交錯鋸齒狀排列，即該内 圈研磨顆粒30b設置於對應至相鄰的該外圈研磨顆粒30a 之間的位置，如『圖3-2』所示，係》圖3-1』之局部放 大示意圖。 [0015] 於本發明中，該基材11與該結合層12之材質可為金屬、 陶瓷或高分子樹脂，且該第一研磨顆粒21、該第二研磨 顆粒31、該外圈研磨顆粒31a與該内圈研磨顆粒31b可為 鑽石、立方氮化硼、多晶立方氮化硼、碳化矽、氧化銘 或氧化錘。在上述本實施例’該基材11較佳為不錄鋼材 料’該結合層12較佳為含鎳之金屬焊料，該第一研磨顆 粒21、該第二研磨顆粒31、該外圈研磨顆粒31 a與該内圈 100113648 表單編號A0101 第7頁/共22頁 1002022817-0 201243929 研磨顆粒31b均為鑽石，其中，該第二研磨顆粒31、該外 圈研磨顆粒31a與該内圈研磨顆粒31b之鑽石品質係優於 該第一研磨顆粒21之鑽石。其中，通常以Diashape系 統評估鑽石品質，係分析鑽石晶體之橢圓率 (el 1 iptici ty)及粗链度（roughness)並據此進行分類 ’當橢圓率與粗糙度越低，表示其品質較高；當橢圓率 與粗链度越尚，則表示其品質較低。 [0016] 為進一步具體說明本發明化學機械研磨修整器，請參閱 『圖5-1』、『圖5-2』與『圖6-1』、『圖6-2』，分別 為本發明化學機械研磨修整器另一實施例使用後於5〇倍 及100倍之掃描式電子顯微鏡圖，以及習知化學機械研磨 修整器使用後於75倍及500倍之掃描式電子顯微鏡圖，『 圖5 — 1』與『圖5-2』所使用的修整器如『圖3』、『圖4 』所示，其中，該基材丨丨為不銹鋼材料，該結合層12為 含鎳之金屬焊料，該第一研磨顆粒21、該外圈研磨顆粒 31a與該内圈研磨顆粒31b均為鑽石，『圖6-1』、『圖 6-2』所使用的則為鑽石呈規則排列之習知化學機械研磨 修整器，將兩者於相同的加工條件下對研磨墊進行修整 後’再以掃描式電子顯微鏡觀察其鑽石之形貌，其中， 『圖5-2』與『圖6-2』分別為『圖5-1』及『圖』圓 圈處之放大圖。由r圖5_丨』與『圖5_2』可看出，該修 整器對研磨墊進行修整後，位於該周邊區域122之該外圈 研磨部3 0a與該内圈研磨部30b，以及位於該中央區域 121之該中央研磨部20，其中的該第一研磨顆粒21與該第 二研磨顆粒31a、31b均保有良好的晶體形狀，且未發生 100113648 表單編號A0101 第8頁/共22頁 1002022817-0 201243929 破裂；反觀，由 、 - 圖6-1』與『圖6_2』可看出，習知$ —敕在進仃修整後，其研磨難容易發生破裂而呈現不 曰曰里。由此顯見，相較於鑽石呈規則排列之習知 化學機械研磨修整$，本㈣化學麟研 擁有較佳的使料命。 確實 [0017] Ο [0018] 此卜右針對數量為100個之上述『圖5-1』與『圖5 — 2 所示的修整器以及『圖6-1』與『圖6-2』所示的修整 器進行使料之觀察，則可發現前者僅有4%之修整器於 使用後發生讀石破裂，*後者將有高達近7Q%之修整器於 使用後發生鑽石破裂。 ❹ [0019] 100113648201243929 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a chemical mechanical polishing dresser, and more particularly to a chemical mechanical polishing dresser which has a long service life and an excellent finishing effect. [Prior Art] [0002] In the semiconductor wafer manufacturing process, the chemical mechanical polishing (CMP) process is widely used to polish the Shixi wafer to flatten the surface of the silicon wafer. A common chemical mechanical polishing process uses a polishing pad (or polishing pad) that is fixed to a rotating table to contact and apply a force on a spin-on carrier, which is used for grinding. The carrier and the rotating table will rotate and provide a polishing slurry to the polishing pad. In general, the debris and abrasive slurry caused by the grinding will accumulate in the holes in the polishing pad, causing the polishing pad to wear out and causing the polishing effect on the wafer to be reduced. Therefore, it is necessary to use a Conditioner. Remove debris and abrasive slurry from the polishing pad. [0003] A trimmer for a chemical mechanical polishing process, such as the Republic of China Invention Patent Publication No. 541226, discloses an abrasive tool having equal-grained abrasive particles and a method of manufacturing the same, the abrasive tool comprising a substrate, a a binder layer and a plurality of abrasive particles, wherein at least one abrasive grain binding groove is formed on one of the abrasive grain bonding surfaces of the substrate, the bonding agent layer is disposed on the abrasive grain bonding groove, and the abrasive grain is bonded to the substrate In the above, the arrangement of the abrasive grain-bonding grooves is such that the alignment of the abrasive grains is uniform and has a similar height to improve the stability during dressing. In addition, a chemical mechanical polishing pad conditioner is disclosed in Japanese Patent Laid-Open No. 2007-268666, which includes 100113648 Form No. 1010101, Page 3 of 22, 1002022817-0 201243929 - Metal Substrate and - Grinding Section, which is composed of plural The abrasive particles are embedded in the circumference of the metal substrate, and the abrasive particles are arranged in a concentric pattern, and the hole is designed to reduce the height difference between the abrasive particles. Provides a stable dressing rate. In addition, as disclosed in the Chinese Patent Publication No. 200425993, a polishing pad finisher includes a bottom layer, a fixed layer, and a plurality of diamond particles, the number of which is arranged in a concentric manner from the outside to the inside. This allows the diamond particles to have a consistent wear rate, which extends the life of the finisher. Just in view of the above prior art, the abrasive particles are arranged in a circular manner, so that the central portion of the dresser will be less difficult to grind than the peripheral region, and when the actual (4) trimming (four) central region is not possible, the grinding crucible cannot be trimmed. Therefore, its finishing efficiency is not good. Furthermore, since the amount of abrasive particles in the peripheral region is higher than that in the towel region, the distribution of the amount of abrasive particles is greatly different inside and outside, which causes uneven pressure and poor stability during trimming. [_] For example, the Republic of China Invention Patent Publication No. 575477 discloses a chemical mechanical polishing adjustment 11' including a supporting member and a plurality of hard granules disposed on the supporting member, wherein the hard granules are regularly arranged, wherein The hard paper particles can be arranged in a checkerboard shape, a honeycomb shape or a radial shape. However, when grinding, the hard granules arranged at the outermost edge will withstand a larger impact force than the hard granules arranged close to the inner edge, and at the same time, the orientation of the hard granules due to the outermost edge thereof It does not coincide with the direction of travel of the hard granules. Therefore, the hard granules are prone to cracking during grinding, which will shorten the service life of the regulator. 100113648 Form No. A0101 Page 4 / Total 22 Page 1002022817-0 201243929 SUMMARY OF THE INVENTION [0006] The main object of the present invention is to solve the conventional chemical mechanical polishing dresser's trimming due to the arrangement of the abrasive particles in an annular manner. The problem of poor grinding effect in the central area of the device, and the dresser in which the abrasive particles are regularly arranged. The orientation of the abrasive particles due to the outer edge is different from the direction of rotation, so that the abrasive particles on the outer edge of the trimming cannot withstand large cutting. Speed and prone to breakage. [0007] In order to achieve the above object, the present invention provides a chemical mechanical polishing conditioner comprising a carrier, a central polishing portion and at least one surrounding polishing portion, the crucible carrier having a central region and being disposed outside the central region a central polishing portion is fixed to a central portion of the carrier, and the central polishing portion has a plurality of first abrasive particles arranged in a matrix pattern, the peripheral polishing portion being fixed to a peripheral region of the carrier, and The peripheral abrasive portion has a plurality of second abrasive particles arranged in a circular pattern and surrounding the central abrasive portion. [0008] It can be seen from the above that the beneficial effects achieved by the chemical mechanical polishing dresser of the present invention compared to the prior art are as follows: 1. The "chemical rhyme health towel central grinding portion is provided with the surrounding material" through the pure shape The direction of the pattern is the same as the direction of rotation of the dresser during processing, which avoids the problem of cracking due to the large cutting speed, so the service life of the dresser can be improved, and the cost of the chemical mechanical polishing process can be greatly reduced. 2. At the same time, by providing the central grinding portion in the surrounding grinding portion, the form number A0101 can be increased via the first abrasive particles arranged in a matrix pattern. The sheet number A0101 5th/22 S, 002022817-0 201243929 Dresser and grinding The contact area between the pads makes trimming more efficient and reduces the time required for the CMP process. [0010] [0012] [0013] 100113648 The detailed description and technical content of the chemical mechanical polishing conditioner of the present invention are as follows: Please refer to "Figure 1" and "Figure" first. 2 is a top view and a cross-sectional view, respectively, of an embodiment of the chemical mechanical polishing dresser of the present invention, the dresser comprising a carrier 10, a 1 7 7 central polishing portion 20 and at least one surrounding polishing portion, the carrier 10 comprising a base The material 11 and a bonding layer 12 disposed on the substrate, and the bonding layer 12 has a central region 121 and a peripheral region 122 disposed outside the central region 121. The central polishing portion 2 and the peripheral polishing portion 30 respectively include a plurality of first abrasive particles 21 and a plurality of second abrasive particles 31, wherein the first abrasive particles 21 are fixed to a central region of the bonding layer 12 The second abrasive particles 31 are fixed to the peripheral region 122 of the bonding layer 12, and the first abrasive particles 21 are arranged in a matrix pattern, and the second abrasive particles 31 are arranged in a ring pattern. In the present embodiment, the number of the surrounding polishing portions 30 is one turn, but the present invention is not limited thereto, and the number of the surrounding polishing portions 30 may be a plurality of turns, and the peripheral polishing portions 30 have different radial radii. In addition, the concentric pattern is formed. In addition, the second abrasive particles 31 adjacent to the surrounding polishing portion 3 are preferably arranged in an interdigitated manner. That is, wherein the second abrasive particles 31 of the peripheral polishing portion 30 are And a corresponding position between the adjacent second abrasive particles 31 disposed in another adjacent one of the surrounding polishing portions. Please refer to FIG. 3-1 and FIG. 4 respectively, which are respectively a top view and a cross-sectional view of another embodiment of the chemical mechanical polishing dresser of the present invention. The dresser 1002022817-0 Form No. 1010101 Page 6 of 22 201243929 〇 [0014] also includes a carrier 10, a central polishing portion 2A, an outer ring polishing portion 30a, and an inner ring polishing portion 30b. The carrier 1 includes a substrate 11 and a substrate disposed thereon. The bonding layer 12 on the 11 has a central region 121 and a peripheral region 122 disposed outside the central region 121. The central polishing portion 20 includes a plurality of first abrasive particles 21, and the outer ring polishing portion 30a and the inner ring polishing portion 30b respectively include a plurality of outer ring abrasive particles 3 la and a plurality of inner ring abrasive particles 31b, the first The abrasive particles 21 are fixed to the central region 121 of the bonding layer 12, and the outer ring polishing portion 30a and the inner ring polishing portion 30b are fixed to the peripheral region 122 of the bonding layer 12. The first abrasive particles 21 are arranged in a matrix pattern, and the outer ring polishing portion 30a and the inner ring polishing portion 30b are respectively arranged in a ring pattern. As shown in Fig. 3-1, the radius of the outer ring polishing portion 30a is larger than the inner ring polishing portion 30b'. The outer ring polishing portion 30a and the inner ring polishing portion 30b thus form a concentric pattern. In addition, in the present embodiment, the inner ring abrasive particles 30b and the outer ring abrasive particles 30a are preferably arranged in a zigzag manner, that is, the inner ring abrasive particles 30b are disposed corresponding to the adjacent outer ring abrasive particles 30a. The position between them, as shown in Figure 3-2, is a partial enlarged view of Figure 3-1. [0015] In the present invention, the material of the substrate 11 and the bonding layer 12 may be metal, ceramic or polymer resin, and the first abrasive particles 21, the second abrasive particles 31, and the outer ring abrasive particles 31a The inner ring abrasive particles 31b may be diamond, cubic boron nitride, polycrystalline cubic boron nitride, tantalum carbide, oxidized or oxidized hammer. In the above embodiment, the substrate 11 is preferably a non-recording steel material. The bonding layer 12 is preferably a nickel-containing metal solder, the first abrasive particles 21, the second abrasive particles 31, and the outer ring abrasive particles. 31 a and the inner ring 100113648 Form No. A0101 Page 7 / Total 22 pages 1002022817-0 201243929 The abrasive particles 31b are diamonds, wherein the second abrasive particles 31, the outer ring abrasive particles 31a and the inner ring abrasive particles 31b The diamond quality is superior to the diamond of the first abrasive particles 21. Among them, the diamond quality is usually evaluated by the Diashape system, and the ellipticity (el 1 iptici ty) and the roughness of the diamond crystal are analyzed and classified according to this. 'The lower the ellipticity and roughness, the higher the quality. When the elliptic rate and the thick chain are more, the quality is lower. [0016] In order to further specifically describe the chemical mechanical polishing conditioner of the present invention, please refer to "Figure 5-1", "Figure 5-2" and "Figure 6-1", "Figure 6-2", respectively, the chemistry of the present invention Another embodiment of the mechanical polishing dresser is used at 5 times and 100 times scanning electron micrographs, and 75 times and 500 times scanning electron micrographs after using the conventional chemical mechanical polishing dresser, Figure 5 The trimming device used in the "1" and "Fig. 5-2" is as shown in Fig. 3 and Fig. 4, wherein the substrate is made of stainless steel, and the bonding layer 12 is a metal solder containing nickel. The first abrasive particles 21, the outer ring abrasive particles 31a and the inner ring abrasive particles 31b are both diamonds, and the conventional chemical used in the "Figure 6-1" and "Fig. 6-2" is a regular arrangement of diamonds. Mechanical polishing dresser, after the two are trimmed under the same processing conditions, the shape of the diamond is observed by scanning electron microscope. Among them, Figure 5-2 and Figure 6-2 respectively It is an enlarged view of the circle at "Figure 5-1" and "Figure". It can be seen from FIG. 5_丨 and FIG. 5_2 that after the dresser trims the polishing pad, the outer ring polishing portion 30a and the inner ring polishing portion 30b located in the peripheral region 122, and the The central polishing portion 20 of the central region 121, wherein the first abrasive particles 21 and the second abrasive particles 31a, 31b both maintain a good crystal shape and does not occur 100113648 Form No. A0101 Page 8 / Total 22 Page 1002022817- 0 201243929 rupture; in contrast, by, - Figure 6-1" and "Figure 6_2" can be seen, the conventional $ 敕 敕 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨From this point of view, this (4) Chemical Lin Research has a better life expectancy compared to the conventional chemical mechanical polishing repair of diamonds. Indeed [0017] Ο [0018] This is for the number of the above-mentioned "Figure 5-1" and "Fig. 5-2" trimmer and "Figure 6-1" and "Figure 6-2" When the trimmer is used to observe the material, it can be found that only 4% of the former has a readstone crack after use, and the latter will have up to 7Q% of the trimmer to break the diamond after use. ❹ [0019] 100113648
綜上所述’本發明化學機械研磨修整器主要是在該中央 研磨部外設有該周圍研磨部，以呈現矩陣圖樣排列之第 一研磨顆粒搭配環形圖樣排列之第二研磨顆粒，藉此， 一方面’由於該第二研磨顆粒之排列方向係與該修整器 之轉動方向相同，故可在修整時承受較大的撞擊力道， 而避免發生破裂，另一方面，透過位於該周圍研磨部内 而以較為密集之矩陣圖樣排列的該第一研磨顆粒，於加 工時可以對研磨墊進行有效地修整，因此，本發明化學 機械研磨修整器係可維持高使用壽命’並同時擁有優異 的加工效率。故本發明極具進步性及符合申請發明專利 之要件，爰依法提出申請，祈鈞局早曰賜准專利，實 感德便。 以上已將本發明做一詳細說明，惟以上所述者，僅爲本 發明的一較佳實施例而已，當不能限定本發明實施的範 圍。即凡依本發明申請範圍所作的均等變化與修飾等， 表單編號A0101 第9頁/共22 I 1002022817-0 201243929 皆應仍屬本發明的專利涵蓋範圍内。 【圖式簡單說明】 [0020] [0021] [0022] [0023] [0024] [0025] [0026] [0027] [0028] [0029] [0030] [0031] [0032] 圖1為本發明化學機械研磨修整器一實施例之俯視圖。 圖2，為本發明化風 予機械研磨修整器一實施例之剖面圖。 圖3 -1，為本私日日β x t予機械研磨修整器另一實施例之俯视 圖3-2，為圖3^ 1之局部放大示意圖。 一實施例之剖面圖 圖4為本發明化學機械研磨修整器另 圖5-1 ’為本發明 月化學機械研磨修整器另一實施例使用接 於5〇倍之料M W㈣。 圖 $本發明化學機械研磨修整器另-實施例使用德 於剛倍之掃Μ電子顯微鏡圖。 圖6 1為^知化學機械研磨修整器使用後於75倍之掃描 式電子顯微鏡圖。 圖6-2 ’為習知化學機械研磨修整器使用後於5〇〇倍之掃 描式電子顯微鏡圖。 【主要元件符號說明】 10 .............承載體 11 .............基材 12 . 121 中央區域 結合層 •中央區域 100113648 表單編號Α0101 第10頁/共22頁 1002022817-0 201243929 [0033] 122...... .......周邊區域 [0034] 20....... [0035] 21....... [0036] 30....... .......周圍研磨部 [0037] 31....... ......第二研磨顆粒 [0038] 30a...... .......外圈研磨部 [0039] 31a...... .......外圈研磨顆粒 [0040] 30b...... [0041] 31b...... .......内圈研磨顆粒 Ο 100113648In summary, the chemical mechanical polishing dresser of the present invention mainly comprises the peripheral grinding portion disposed outside the central grinding portion, and the second abrasive particles arranged in a matrix pattern and the second abrasive particles arranged in a circular pattern are arranged. On the one hand, since the second abrasive particles are arranged in the same direction as the dresser, they can withstand a large impact force during trimming to avoid cracking, and on the other hand, through the surrounding grinding portion. The first abrasive particles arranged in a dense matrix pattern can effectively trim the polishing pad during processing, and therefore, the chemical mechanical polishing conditioner of the present invention can maintain a high service life while having excellent processing efficiency. Therefore, the present invention is highly progressive and conforms to the requirements of applying for an invention patent, and the application is made according to law, and the Prayer Council gives the patent as early as possible. The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made by the scope of the present application, Form No. A0101, page 9 / total 22 I 1002022817-0 201243929 are still within the scope of the patent of the present invention. [0020] [0020] [0023] [0023] [0028] [0030] [0032] FIG. 1 is a view of the present invention A top view of an embodiment of a chemical mechanical polishing conditioner. Fig. 2 is a cross-sectional view showing an embodiment of a ventilating mechanical polishing dresser of the present invention. Fig. 3-1 is a plan view of another embodiment of the private day and day βx t mechanical polishing dresser. Fig. 3-2 is a partial enlarged view of Fig. 3^1. Fig. 4 is a cross-sectional view of the chemical mechanical polishing dresser of the present invention. Fig. 5-1' is another embodiment of the monthly chemical mechanical polishing dresser of the present invention using a material M W (4) which is 5 times longer. Fig. $ Another embodiment of the chemical mechanical polishing dresser of the present invention uses an electron micrograph of a broom. Figure 6 is a scanning electron microscope image at 75 times after the use of the chemical mechanical polishing dresser. Figure 6-2' is a scanning electron microscope image 5 times after use of a conventional chemical mechanical polishing dresser. [Description of main component symbols] 10 .............Carrier 11 .............Substrate 12. 121 Central zone bonding layer • Central zone 100113648 Form No. 101 0101 Page 10 / Total 22 pages 1002022817-0 201243929 [0033] 122.................. Peripheral area [0034] 20....... [0035] 21... .... [0036] 30...................About the grinding portion [0037] 31.............Second abrasive particles [0038] 30a ............Outer ring grinding section [0039] 31a..................Outer ring grinding granules [0040] 30b... [0041 ] 31b...... ....... inner ring grinding particles Ο 100113648
表單編號AOltU 第11頁/共22頁 1002022817-0Form Number AOltU Page 11 of 22 1002022817-0