JP6463935B2 - 露光装置、露光方法、およびデバイス製造方法 - Google Patents

露光装置、露光方法、およびデバイス製造方法 Download PDF

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Publication number
JP6463935B2
JP6463935B2 JP2014202122A JP2014202122A JP6463935B2 JP 6463935 B2 JP6463935 B2 JP 6463935B2 JP 2014202122 A JP2014202122 A JP 2014202122A JP 2014202122 A JP2014202122 A JP 2014202122A JP 6463935 B2 JP6463935 B2 JP 6463935B2
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Japan
Prior art keywords
shot
exposure
shot areas
optical system
same group
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JP2014202122A
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Japanese (ja)
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JP2016072507A (ja
JP2016072507A5 (enExample
Inventor
佐々木　亮
亮 佐々木
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014202122A priority Critical patent/JP6463935B2/ja
Priority to CN201510567210.3A priority patent/CN105467772B/zh
Priority to US14/852,658 priority patent/US9726981B2/en
Priority to KR1020150132044A priority patent/KR102002666B1/ko
Publication of JP2016072507A publication Critical patent/JP2016072507A/ja
Publication of JP2016072507A5 publication Critical patent/JP2016072507A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2014202122A 2014-09-30 2014-09-30 露光装置、露光方法、およびデバイス製造方法 Active JP6463935B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014202122A JP6463935B2 (ja) 2014-09-30 2014-09-30 露光装置、露光方法、およびデバイス製造方法
CN201510567210.3A CN105467772B (zh) 2014-09-30 2015-09-08 曝光装置、曝光方法及设备制造方法
US14/852,658 US9726981B2 (en) 2014-09-30 2015-09-14 Exposure apparatus, exposure method, and device manufacturing method
KR1020150132044A KR102002666B1 (ko) 2014-09-30 2015-09-18 노광 장치, 노광 방법 및 디바이스 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014202122A JP6463935B2 (ja) 2014-09-30 2014-09-30 露光装置、露光方法、およびデバイス製造方法

Publications (3)

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JP2016072507A JP2016072507A (ja) 2016-05-09
JP2016072507A5 JP2016072507A5 (enExample) 2017-11-02
JP6463935B2 true JP6463935B2 (ja) 2019-02-06

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JP2014202122A Active JP6463935B2 (ja) 2014-09-30 2014-09-30 露光装置、露光方法、およびデバイス製造方法

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US (1) US9726981B2 (enExample)
JP (1) JP6463935B2 (enExample)
KR (1) KR102002666B1 (enExample)
CN (1) CN105467772B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102575073B1 (ko) * 2016-04-12 2023-09-06 삼성전자주식회사 마스크 데이터 검증 방법
JP6973612B2 (ja) * 2016-08-29 2021-12-01 株式会社ニコン 積層装置、薄化装置、露光装置、制御装置、プログラム、積層体の製造方法、及び装置
KR102426485B1 (ko) 2017-09-29 2022-07-27 온투 이노베이션 아이엔씨. 리소그래피 노광 공정의 최적화를 위한 시스템 및 방법
JP7222659B2 (ja) * 2018-10-29 2023-02-15 キヤノン株式会社 露光装置、および物品製造方法
CN114746810B (zh) * 2019-11-21 2025-09-12 Asml荷兰有限公司 用于确定光刻设备的控制数据的方法和设备
EP3839630A1 (en) * 2019-12-19 2021-06-23 ASML Netherlands B.V. Methods and apparatus for configuring a lens model request
KR102840275B1 (ko) 2020-02-21 2025-07-30 온투 이노베이션 아이엔씨. 리소그래피 공정에서 오버레이 오류를 보정하기 위한 시스템 및 방법
JP7759368B2 (ja) * 2023-10-27 2025-10-23 キヤノン株式会社 情報処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3336649B2 (ja) * 1992-12-25 2002-10-21 株式会社ニコン 露光装置、露光方法、及びその露光方法を含むデバイス製造方法、及びそのデバイス製造方法により製造されたデバイス
JPH06291021A (ja) * 1993-04-06 1994-10-18 Nikon Corp 位置合わせ方法
US5808910A (en) * 1993-04-06 1998-09-15 Nikon Corporation Alignment method
JP3278303B2 (ja) 1993-11-12 2002-04-30 キヤノン株式会社 走査型露光装置及び該走査型露光装置を用いるデバイス製造方法
JP3569962B2 (ja) * 1994-06-17 2004-09-29 株式会社ニコン 位置合わせ装置及び位置合わせ方法、それを用いた露光装置及び露光方法
US6312859B1 (en) * 1996-06-20 2001-11-06 Nikon Corporation Projection exposure method with corrections for image displacement
US20060194129A1 (en) * 2005-02-25 2006-08-31 Horn Douglas M Substrate edge focus compensation
JP5498243B2 (ja) * 2010-05-07 2014-05-21 キヤノン株式会社 露光装置、露光方法及びデバイス製造方法
CN102736422B (zh) * 2011-03-31 2015-07-22 上海微电子装备有限公司 一种接近式逐场曝光装置与方法
CN103545174B (zh) * 2012-07-16 2016-08-24 无锡华润上华科技有限公司 光刻对焦参数测试方法及系统

Also Published As

Publication number Publication date
JP2016072507A (ja) 2016-05-09
KR102002666B1 (ko) 2019-07-23
US20160091800A1 (en) 2016-03-31
KR20160038749A (ko) 2016-04-07
CN105467772B (zh) 2019-01-04
US9726981B2 (en) 2017-08-08
CN105467772A (zh) 2016-04-06

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