JP6456317B2 - 表示装置、および可撓性表示装置 - Google Patents
表示装置、および可撓性表示装置 Download PDFInfo
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- JP6456317B2 JP6456317B2 JP2016035351A JP2016035351A JP6456317B2 JP 6456317 B2 JP6456317 B2 JP 6456317B2 JP 2016035351 A JP2016035351 A JP 2016035351A JP 2016035351 A JP2016035351 A JP 2016035351A JP 6456317 B2 JP6456317 B2 JP 6456317B2
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- 238000000034 method Methods 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 238000005192 partition Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 150000002484 inorganic compounds Chemical class 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Description
本実施形態では、本発明の一実施形態に係る表示装置を図1乃至図4を用いて説明する。
本実施形態では、本発明の一実施形態に係る表示装置を図5乃至図7を用いて説明する。第1実施形態と同様の構成については説明を割愛する。
本実施形態では、本発明の一実施形態に係る表示装置を図8を用いて説明する。第1、第2実施形態と同様の構成については説明を割愛する。
本実施形態では、本発明の一実施形態に係る表示装置を図9、10を用いて説明する。第1乃至第3実施形態と同様の構成については説明を割愛する。
Claims (17)
- 基材と、
前記基材上の表示領域と、
前記基材上に位置し、前記表示領域から前記表示領域の外側へ伸びる配線と、
前記基材上の一対の金属膜と、
前記一対の金属膜の間に位置する電源線と、
前記電源線と電気的に接続された補助電極を有し、
前記表示領域は画素を有し、
前記画素は、
ゲート電極、ソース電極、およびドレイン電極を有するトランジスタと、
第1の電極、前記第1の電極上の第2の電極、および前記第1の電極と前記第2の電極に挟まれた有機層を有する発光素子を含み、
前記電源線は前記第2の電極と電気的に接続され、
前記配線、前記ソース電極、および前記ドレイン電極は同一の層に存在し、
前記一対の金属膜、および前記補助電極が同一の層に存在し、
前記配線は前記一対の金属膜の間に位置する表示装置。 - 前記表示領域は前記一対の金属膜の間に位置する、請求項1に記載の表示装置。
- 前記配線と前記一対の金属膜は二つの絶縁膜に挟まれる、請求項1に記載の表示装置。
- 前記配線と前記一対の金属膜は互いに異なる層に存在する、請求項1に記載の表示装置。
- 前記画素は、容量を形成する一対の電極を有し、
前記一対の金属膜と前記一対の電極のうちの一方が同一の層に存在する、請求項1に記載の表示装置。 - 前記一対の金属膜は、前記配線の延びる方向に対して交差する方向に突出する凸部を有する、請求項1に記載の表示装置。
- 平面的に見て、前記凸部は前記配線と重畳している、請求項6に記載の表示装置。
- 前記一対の金属膜は電気的に浮遊している、請求項1に記載の表示装置。
- 基材と、
前記基材上の表示領域と、
前記基材上に位置し、前記表示領域から前記表示領域の外側へ伸びる配線と、
前記基材の端部に位置し、前記配線と接続された端子と、
前記基材上の金属膜を有し、
前記基材は折り曲げられて湾曲した領域と、前記湾曲した領域を挟む二つの平坦な領域を与えるように構成され、
前記金属膜は、前記端子と前記表示領域との間に位置し、
前記金属膜は、前記湾曲した領域と前記二つの平坦な領域にわたって伸び、
平面的に見て、前記金属膜は前記配線と重畳する、表示装置。 - 前記金属膜は、前記湾曲した領域の少なくとも一部を外周とする軸と交差するように配置される、請求項9に記載の表示装置。
- 前記金属膜は前記湾曲した領域の少なくとも一部を外周とする軸に交差する方向に伸びる、請求項9に記載の表示装置。
- 前記金属膜は前記湾曲した領域の少なくとも一部を外周とする軸に沿って伸びる、請求項9に記載の表示装置。
- 前記金属膜は、前記基材の辺に沿って配置され、
前記配線は、前記金属膜に沿って、前記辺とは反対の側に配置される、請求項9に記載の表示装置。 - 前記金属膜は、前記配線の延びる方向に対して交差する方向に突出する凸部を有し
平面的に見て、前記凸部は前記配線と重畳する、請求項9に記載の表示装置。 - 前記金属膜の少なくとも一部は、前記湾曲した領域に位置する、請求項9に記載の表示装置。
- 前記金属膜は電気的に浮遊している、請求項9に記載の表示装置。
- 前記基材は可撓性を有する、請求項1または9に記載の表示装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016035351A JP6456317B2 (ja) | 2016-02-26 | 2016-02-26 | 表示装置、および可撓性表示装置 |
KR1020160160083A KR20170101097A (ko) | 2016-02-26 | 2016-11-29 | 표시 장치 및 가요성 표시 장치 |
US15/406,068 US10026921B2 (en) | 2016-02-26 | 2017-01-13 | Display device and flexible display device |
CN201710061273.0A CN107134471B (zh) | 2016-02-26 | 2017-01-25 | 显示装置和挠性显示装置 |
US16/006,901 US10217956B2 (en) | 2016-02-26 | 2018-06-13 | Display device |
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JP2016035351A JP6456317B2 (ja) | 2016-02-26 | 2016-02-26 | 表示装置、および可撓性表示装置 |
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JP2017151352A JP2017151352A (ja) | 2017-08-31 |
JP6456317B2 true JP6456317B2 (ja) | 2019-01-23 |
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US (2) | US10026921B2 (ja) |
JP (1) | JP6456317B2 (ja) |
KR (1) | KR20170101097A (ja) |
CN (1) | CN107134471B (ja) |
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JP6289286B2 (ja) * | 2014-06-25 | 2018-03-07 | 株式会社ジャパンディスプレイ | 表示装置および表示装置の製造方法 |
JP6917873B2 (ja) * | 2017-11-24 | 2021-08-11 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102018754B1 (ko) | 2017-11-29 | 2019-09-05 | 엘지디스플레이 주식회사 | 플렉서블 표시 장치 |
CN107863376B (zh) * | 2017-12-11 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种柔性显示基板、显示面板及显示装置 |
CN108511503B (zh) * | 2018-05-28 | 2020-11-24 | 京东方科技集团股份有限公司 | 一种电致发光显示面板、其制作方法及显示装置 |
WO2020065710A1 (ja) * | 2018-09-25 | 2020-04-02 | シャープ株式会社 | 表示装置 |
US20220052292A1 (en) * | 2018-09-26 | 2022-02-17 | Sharp Kabushiki Kaisha | Display device and method for manufacturing display device |
KR20200117101A (ko) * | 2019-04-02 | 2020-10-14 | 삼성디스플레이 주식회사 | 표시 장치 |
CN110504382B (zh) * | 2019-08-26 | 2021-09-28 | 昆山国显光电有限公司 | 一种显示面板和显示装置 |
CN110634402A (zh) * | 2019-08-28 | 2019-12-31 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其折弯方法及显示装置 |
KR20210102562A (ko) | 2020-02-11 | 2021-08-20 | 삼성디스플레이 주식회사 | 표시 장치 |
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JP2006222071A (ja) * | 2005-01-17 | 2006-08-24 | Seiko Epson Corp | 発光装置、発光装置の製造方法、及び電子機器 |
KR101845480B1 (ko) | 2010-06-25 | 2018-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR101320384B1 (ko) | 2011-06-30 | 2013-10-23 | 삼성디스플레이 주식회사 | 가요성 표시 패널 및 상기 가요성 표시 패널을 포함하는 표시 장치 |
TWI618460B (zh) * | 2013-03-07 | 2018-03-11 | 半導體能源研究所股份有限公司 | 顯示裝置 |
TWI692108B (zh) * | 2013-04-10 | 2020-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JP6151136B2 (ja) | 2013-09-05 | 2017-06-21 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネセンス表示装置 |
JP2015072362A (ja) | 2013-10-03 | 2015-04-16 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
WO2015132698A1 (en) * | 2014-03-06 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP6289286B2 (ja) * | 2014-06-25 | 2018-03-07 | 株式会社ジャパンディスプレイ | 表示装置および表示装置の製造方法 |
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2016
- 2016-02-26 JP JP2016035351A patent/JP6456317B2/ja active Active
- 2016-11-29 KR KR1020160160083A patent/KR20170101097A/ko not_active Application Discontinuation
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2017
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CN107134471B (zh) | 2020-11-03 |
JP2017151352A (ja) | 2017-08-31 |
US20170250366A1 (en) | 2017-08-31 |
US10026921B2 (en) | 2018-07-17 |
CN107134471A (zh) | 2017-09-05 |
US20180294433A1 (en) | 2018-10-11 |
KR20170101097A (ko) | 2017-09-05 |
US10217956B2 (en) | 2019-02-26 |
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