JP6438241B2 - 静電結合した電極を有する直接静電組立体 - Google Patents

静電結合した電極を有する直接静電組立体 Download PDF

Info

Publication number
JP6438241B2
JP6438241B2 JP2014179288A JP2014179288A JP6438241B2 JP 6438241 B2 JP6438241 B2 JP 6438241B2 JP 2014179288 A JP2014179288 A JP 2014179288A JP 2014179288 A JP2014179288 A JP 2014179288A JP 6438241 B2 JP6438241 B2 JP 6438241B2
Authority
JP
Japan
Prior art keywords
substrate
micro
micro object
electric field
field generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014179288A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015142901A5 (enExample
JP2015142901A (ja
Inventor
ジェイソン・トムソン
ユージン・エム・チャウ
ジェンピン・ルー
グレゴリー・エル・ホワイティング
デイヴィッド・ケイ・ビーゲルセン
ジャノス・ベレス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Palo Alto Research Center Inc
Original Assignee
Palo Alto Research Center Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Palo Alto Research Center Inc filed Critical Palo Alto Research Center Inc
Publication of JP2015142901A publication Critical patent/JP2015142901A/ja
Publication of JP2015142901A5 publication Critical patent/JP2015142901A5/ja
Application granted granted Critical
Publication of JP6438241B2 publication Critical patent/JP6438241B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
    • B81C99/002—Apparatus for assembling MEMS, e.g. micromanipulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/20—Electromagnets; Actuators including electromagnets without armatures
    • H01F7/206—Electromagnets for lifting, handling or transporting of magnetic pieces or material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Micromachines (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
JP2014179288A 2013-09-19 2014-09-03 静電結合した電極を有する直接静電組立体 Active JP6438241B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/031,468 2013-09-19
US14/031,468 US9431283B2 (en) 2013-09-19 2013-09-19 Direct electrostatic assembly with capacitively coupled electrodes

Publications (3)

Publication Number Publication Date
JP2015142901A JP2015142901A (ja) 2015-08-06
JP2015142901A5 JP2015142901A5 (enExample) 2017-10-12
JP6438241B2 true JP6438241B2 (ja) 2018-12-12

Family

ID=51625788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014179288A Active JP6438241B2 (ja) 2013-09-19 2014-09-03 静電結合した電極を有する直接静電組立体

Country Status (3)

Country Link
US (1) US9431283B2 (enExample)
EP (1) EP2851337B1 (enExample)
JP (1) JP6438241B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10141285B2 (en) 2013-09-19 2018-11-27 Palo Alto Research Center Incorporated Externally induced charge patterning using rectifying devices
US9473047B2 (en) * 2013-09-19 2016-10-18 Palo Alto Research Center Incorporated Method for reduction of stiction while manipulating micro objects on a surface
US10134803B2 (en) 2015-01-23 2018-11-20 Vuereal Inc. Micro device integration into system substrate
US12402466B2 (en) 2015-01-23 2025-08-26 Vuereal Inc. Micro device integration into system substrate
US10700120B2 (en) 2015-01-23 2020-06-30 Vuereal Inc. Micro device integration into system substrate
CN107851586B (zh) 2015-01-23 2021-07-06 维耶尔公司 到受体衬底的选择性微型器件转移
US10519037B2 (en) 2016-01-18 2019-12-31 Palo Alto Research Center Incorporated Multipass transfer surface for dynamic assembly
US20170215280A1 (en) 2016-01-21 2017-07-27 Vuereal Inc. Selective transfer of micro devices
CN115966503A (zh) 2016-10-04 2023-04-14 维耶尔公司 施体衬底中的微装置布置
US10043687B2 (en) * 2016-12-27 2018-08-07 Palo Alto Research Center Incorporated Bumped electrode arrays for microassemblers
US11302554B2 (en) * 2018-12-17 2022-04-12 Palo Alto Research Center Incorporated Micro assembler with fine angle control
US11203525B2 (en) * 2018-12-31 2021-12-21 Palo Alto Research Center Incorporated Method of controlling the placement of micro-objects
KR20240008681A (ko) * 2022-07-12 2024-01-19 에스케이하이닉스 주식회사 반도체 장치

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04159920A (ja) * 1990-10-24 1992-06-03 Mitsubishi Kasei Corp 物品搬送機構
JPH05116757A (ja) * 1991-10-24 1993-05-14 Ricoh Co Ltd 搬送機構
JPH05184163A (ja) * 1991-12-27 1993-07-23 Masafumi Yano 静電アクチュエータ
JPH07203689A (ja) * 1993-12-31 1995-08-04 Toshiro Higuchi 静電アクチュエータ
JPH07213077A (ja) * 1994-01-18 1995-08-11 Nippon Telegr & Teleph Corp <Ntt> 光制御型静電気駆動アクチュエータ
JP3215335B2 (ja) * 1996-10-29 2001-10-02 株式会社富士電機総合研究所 リニア電磁型マイクロアクチュエータ
JPH10271850A (ja) * 1997-03-26 1998-10-09 Oki Electric Ind Co Ltd 媒体搬送装置
JPH1155963A (ja) * 1997-08-01 1999-02-26 Oki Electric Ind Co Ltd 媒体搬送装置
JP2000143024A (ja) * 1998-11-10 2000-05-23 Oki Electric Ind Co Ltd 媒体搬送装置
JP2000209877A (ja) * 1999-01-13 2000-07-28 Dainippon Printing Co Ltd 静電アクチュエ―タにおける電極配線板、及びその製造方法
US6923979B2 (en) * 1999-04-27 2005-08-02 Microdose Technologies, Inc. Method for depositing particles onto a substrate using an alternating electric field
GB2354114A (en) * 1999-09-13 2001-03-14 Gareth John Monkman Micro-scale electrostatic gripper
US6687987B2 (en) 2000-06-06 2004-02-10 The Penn State Research Foundation Electro-fluidic assembly process for integration of electronic devices onto a substrate
JP2002068477A (ja) * 2000-08-30 2002-03-08 Hitachi Metals Ltd 微小粒体搬送装置
US7629026B2 (en) 2004-09-03 2009-12-08 Eastman Kodak Company Thermally controlled fluidic self-assembly
US7332361B2 (en) 2004-12-14 2008-02-19 Palo Alto Research Center Incorporated Xerographic micro-assembler
US7728427B2 (en) * 2007-12-07 2010-06-01 Lctank Llc Assembling stacked substrates that can form cylindrical inductors and adjustable transformers
US7861405B2 (en) 2008-03-03 2011-01-04 Palo Alto Research Center Incorporated System for forming a micro-assembler
US8581167B2 (en) 2010-11-16 2013-11-12 Palo Alto Research Center Incorporated Optically patterned virtual electrodes and interconnects on polymer and semiconductive substrates
US10014261B2 (en) 2012-10-15 2018-07-03 Palo Alto Research Center Incorporated Microchip charge patterning
US9473047B2 (en) 2013-09-19 2016-10-18 Palo Alto Research Center Incorporated Method for reduction of stiction while manipulating micro objects on a surface
US10141285B2 (en) 2013-09-19 2018-11-27 Palo Alto Research Center Incorporated Externally induced charge patterning using rectifying devices

Also Published As

Publication number Publication date
EP2851337A3 (en) 2015-04-29
US20150262856A1 (en) 2015-09-17
EP2851337B1 (en) 2016-05-04
US9431283B2 (en) 2016-08-30
EP2851337A2 (en) 2015-03-25
JP2015142901A (ja) 2015-08-06

Similar Documents

Publication Publication Date Title
JP6438241B2 (ja) 静電結合した電極を有する直接静電組立体
JP6313169B2 (ja) 表面上でマイクロ物体を操作する間に静摩擦を抑える方法
JP6518418B2 (ja) 外部に誘導される、整流装置を用いた帯電パターン化
US10848079B2 (en) Ambient energy harvesting device with charge-carrying movable electrode
Nie et al. Electrically responsive materials and devices directly driven by the high voltage of triboelectric nanogenerators
US9843275B2 (en) Cylindrical and spherical triboelectric generators
RU2749570C2 (ru) Устройство привода и способ
Yu et al. Harvesting energy from low-frequency excitations through alternate contacts between water and two dielectric materials
US8916055B2 (en) Method and device for controlling pattern and structure formation by an electric field
US20050009303A1 (en) Method and apparatus for self-assembly of functional blocks on a substrate facilitated by electrode pairs
US11289643B2 (en) Actuator device and method
US7993959B2 (en) Methods for producing multiple distinct transistors from a single semiconductor
EP3552249B1 (en) Actuator device and method
US10613633B2 (en) Tactile feedback device
Lu et al. Open and closed loop manipulation of charged microchiplets in an electric field
KR20180029629A (ko) 강유전체를 이용한 마찰 전기 디바이스
Cole et al. Nanocontact electrification through forced delamination of dielectric interfaces
CN106602919B (zh) 电信号产生单元、阵列、地毯及产生直流电信号的方法
KR20200032840A (ko) 자가발전 도로 에너지 수확기 및 이를 포함하는 도로 관리 시스템
CN112414438A (zh) 基于神经元晶体管的柔性传感器
JP6846722B2 (ja) 平面モータ
US10388730B2 (en) Plurality of electrodes on a substrate having different range of spacing
JPH06121550A (ja) 静電アクチュエータ
US20150346148A1 (en) Method and Apparatus for Manipulating Samples Using Optoelectronic Forces
KR20190109898A (ko) 전압분배 구조를 갖는 에너지 하베스팅 소자

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170831

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170831

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20170831

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20170914

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20171106

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171205

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180302

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180515

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180810

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20181030

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20181116

R150 Certificate of patent or registration of utility model

Ref document number: 6438241

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250