JP2015142901A - 静電結合した電極を有する直接静電組立体 - Google Patents
静電結合した電極を有する直接静電組立体 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
- B81C99/002—Apparatus for assembling MEMS, e.g. micromanipulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/20—Electromagnets; Actuators including electromagnets without armatures
- H01F7/206—Electromagnets for lifting, handling or transporting of magnetic pieces or material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
【解決手段】電界生成器が、電界生成器に恒久的には取り付けられていない基板を通過可能に、空間と時間の両方で変化する電場あるいは磁場の力場を生成して、一般に数ミクロンから数百ミクロンのサイズのマイクロ物体を基板上で操作するよう設定され、マイクロ物体を互いに選択した関係を保ちながら基板上に配置・方向付けし、最終的な配置・方向付けの終了後にこれらのマイクロ物体に後処理を施したマイクロ組立体。
【選択図】なし
Description
Claims (10)
- マイクロ物体を操作するシステムであって、
空間と時間の両方で変化して、前記マイクロ物体を操作する力場を生成するよう設定される電界生成器と、
その上で前記マイクロ物体が前記電界生成器により操作される基板であって、前記基板は前記電界生成器に恒久的には取り付けられておらず、前記力場が前記基板を通過可能な、基板と、を含むシステム。 - 前記力場が電場である、請求項1に記載のシステム。
- 前記電界生成器が、前記電場を生成するための複数の電極を含む、請求項2に記載のシステム。
- 前記電界生成器が、前記電場を生成するための感光体材料を含む、請求項2に記載のシステム。
- 前記力場が磁場である、請求項1に記載のシステム。
- 前記電界生成器が、前記磁場を生成するための複数のコイルを含む、請求項5に記載のシステム。
- 第2の基板と、
前記マイクロ物体の相対位置と相対方向を保持するよう、前記基板から前記第2の基板に前記マイクロ物体を移動させる装置と、をさらに含む請求項1に記載のシステム。 - マイクロ物体を操作する方法であって
空間と時間の両方で変化して前記マイクロ物体を操作する力場を電界生成器により生成するステップと、
その上で前記マイクロ物体が前記電界生成器により操作される基板であって、前記基板は前記電界生成器に恒久的には取り付けられておらず、前記力場が前記基板を通過可能な、基板を供給するステップと、を含む方法。 - 前記力場が磁場である、請求項8に記載の方法。
- 前記マイクロ物体の相対位置と相対方向を保持するよう、前記基板から第2の基板に前記マイクロ物体を移動させるステップをさらに含む、請求項8に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/031,468 US9431283B2 (en) | 2013-09-19 | 2013-09-19 | Direct electrostatic assembly with capacitively coupled electrodes |
US14/031,468 | 2013-09-19 |
Publications (3)
Publication Number | Publication Date |
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JP2015142901A true JP2015142901A (ja) | 2015-08-06 |
JP2015142901A5 JP2015142901A5 (ja) | 2017-10-12 |
JP6438241B2 JP6438241B2 (ja) | 2018-12-12 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014179288A Active JP6438241B2 (ja) | 2013-09-19 | 2014-09-03 | 静電結合した電極を有する直接静電組立体 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9431283B2 (ja) |
EP (1) | EP2851337B1 (ja) |
JP (1) | JP6438241B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015061509A (ja) * | 2013-09-19 | 2015-03-30 | パロ・アルト・リサーチ・センター・インコーポレーテッドPalo Alto Research Center Incorporated | 表面上でマイクロ物体を操作する間に静摩擦を抑える方法 |
JP2020099182A (ja) * | 2018-12-17 | 2020-06-25 | パロ アルト リサーチ センター インコーポレイテッド | 精細な角度制御を備えたマイクロアセンブラ |
JP2020108880A (ja) * | 2018-12-31 | 2020-07-16 | パロ アルト リサーチ センター インコーポレイテッド | 微小物体のセットを分割するためのマイクロアセンブラシステム |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US10141285B2 (en) | 2013-09-19 | 2018-11-27 | Palo Alto Research Center Incorporated | Externally induced charge patterning using rectifying devices |
DE112016000447T5 (de) * | 2015-01-23 | 2017-11-16 | Gholamreza Chaji | Selektiver Mikrovorrichtungstransfer zu einem Empfängersubstrat |
US10700120B2 (en) | 2015-01-23 | 2020-06-30 | Vuereal Inc. | Micro device integration into system substrate |
US10519037B2 (en) * | 2016-01-18 | 2019-12-31 | Palo Alto Research Center Incorporated | Multipass transfer surface for dynamic assembly |
KR102510934B1 (ko) | 2016-10-04 | 2023-03-16 | 뷰리얼 인크. | 도너 기판 내의 마이크로 디바이스 배열 |
US10043687B2 (en) * | 2016-12-27 | 2018-08-07 | Palo Alto Research Center Incorporated | Bumped electrode arrays for microassemblers |
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- 2014-09-15 EP EP14184825.9A patent/EP2851337B1/en active Active
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JP2015061509A (ja) * | 2013-09-19 | 2015-03-30 | パロ・アルト・リサーチ・センター・インコーポレーテッドPalo Alto Research Center Incorporated | 表面上でマイクロ物体を操作する間に静摩擦を抑える方法 |
JP2020099182A (ja) * | 2018-12-17 | 2020-06-25 | パロ アルト リサーチ センター インコーポレイテッド | 精細な角度制御を備えたマイクロアセンブラ |
JP7289776B2 (ja) | 2018-12-17 | 2023-06-12 | パロ アルト リサーチ センター インコーポレイテッド | 精細な角度制御を備えたマイクロアセンブラ |
JP2020108880A (ja) * | 2018-12-31 | 2020-07-16 | パロ アルト リサーチ センター インコーポレイテッド | 微小物体のセットを分割するためのマイクロアセンブラシステム |
JP7356888B2 (ja) | 2018-12-31 | 2023-10-05 | パロ アルト リサーチ センター インコーポレイテッド | 微小物体のセットを分割するためのマイクロアセンブラシステム |
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US20150262856A1 (en) | 2015-09-17 |
EP2851337A3 (en) | 2015-04-29 |
JP6438241B2 (ja) | 2018-12-12 |
EP2851337B1 (en) | 2016-05-04 |
EP2851337A2 (en) | 2015-03-25 |
US9431283B2 (en) | 2016-08-30 |
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