JP6426379B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP6426379B2
JP6426379B2 JP2014126434A JP2014126434A JP6426379B2 JP 6426379 B2 JP6426379 B2 JP 6426379B2 JP 2014126434 A JP2014126434 A JP 2014126434A JP 2014126434 A JP2014126434 A JP 2014126434A JP 6426379 B2 JP6426379 B2 JP 6426379B2
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film
oxide semiconductor
electrode
oxide
insulating film
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JP2014126434A
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Japanese (ja)
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JP2015026830A5 (enExample
JP2015026830A (ja
Inventor
行徳 島
行徳 島
正美 神長
正美 神長
安孝 中澤
安孝 中澤
純一 肥塚
純一 肥塚
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2015026830A5 publication Critical patent/JP2015026830A5/ja
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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2014126434A 2013-06-19 2014-06-19 半導体装置の作製方法 Expired - Fee Related JP6426379B2 (ja)

Priority Applications (1)

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JP2014126434A JP6426379B2 (ja) 2013-06-19 2014-06-19 半導体装置の作製方法

Applications Claiming Priority (3)

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JP2013128920 2013-06-19
JP2013128920 2013-06-19
JP2014126434A JP6426379B2 (ja) 2013-06-19 2014-06-19 半導体装置の作製方法

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JP2015026830A JP2015026830A (ja) 2015-02-05
JP2015026830A5 JP2015026830A5 (enExample) 2017-06-29
JP6426379B2 true JP6426379B2 (ja) 2018-11-21

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JP2014126434A Expired - Fee Related JP6426379B2 (ja) 2013-06-19 2014-06-19 半導体装置の作製方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6801969B2 (ja) * 2015-03-03 2020-12-16 株式会社半導体エネルギー研究所 半導体装置、表示装置、および電子機器
KR20240012619A (ko) * 2015-11-20 2024-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치의 제작 방법, 또는 이 반도체 장치를 가지는 표시 장치
US10263114B2 (en) * 2016-03-04 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
US11302717B2 (en) 2016-04-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
JP7089478B2 (ja) 2016-11-23 2022-06-22 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
TWI778959B (zh) * 2017-03-03 2022-10-01 日商半導體能源硏究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP2022145974A (ja) * 2021-03-22 2022-10-05 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100980020B1 (ko) * 2003-08-28 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
KR101244895B1 (ko) * 2006-04-06 2013-03-18 삼성디스플레이 주식회사 박막 트랜지스터 표시판의 제조 방법
TWI501401B (zh) * 2008-10-31 2015-09-21 Semiconductor Energy Lab 半導體裝置及其製造方法
WO2011043194A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2012094853A (ja) * 2010-09-30 2012-05-17 Kobe Steel Ltd 配線構造
KR101830170B1 (ko) * 2011-05-17 2018-02-21 삼성디스플레이 주식회사 산화물 반도체 소자, 산화물 반도체 소자의 제조 방법, 산화물 반도체소자를 포함하는 표시 장치 및 산화물 반도체 소자를 포함하는 표시 장치의 제조 방법

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