JP6407992B2 - ビットセルおよび論理区画を有するモノリシック３次元（３ｄ）ランダムアクセスメモリ（ｒａｍ）アレイアーキテクチャ - Google Patents

ビットセルおよび論理区画を有するモノリシック３次元（３ｄ）ランダムアクセスメモリ（ｒａｍ）アレイアーキテクチャ Download PDF

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JP6407992B2
JP6407992B2 JP2016525483A JP2016525483A JP6407992B2 JP 6407992 B2 JP6407992 B2 JP 6407992B2 JP 2016525483 A JP2016525483 A JP 2016525483A JP 2016525483 A JP2016525483 A JP 2016525483A JP 6407992 B2 JP6407992 B2 JP 6407992B2
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tier
ram
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disposed
data bank
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JP2016528727A5 (enExample
JP2016528727A (ja
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カマル、プラトゥシュ
ドゥ、ヤン
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP2016525483A 2013-07-11 2014-07-10 ビットセルおよび論理区画を有するモノリシック３次元（３ｄ）ランダムアクセスメモリ（ｒａｍ）アレイアーキテクチャ Expired - Fee Related JP6407992B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361845044P 2013-07-11 2013-07-11
US61/845,044 2013-07-11
US14/012,478 US20150019802A1 (en) 2013-07-11 2013-08-28 Monolithic three dimensional (3d) random access memory (ram) array architecture with bitcell and logic partitioning
US14/012,478 2013-08-28
PCT/US2014/046152 WO2015006563A1 (en) 2013-07-11 2014-07-10 A monolithic three dimensional (3d) random access memory (ram) array architecture with bitcell and logic partitioning

Publications (3)

Publication Number Publication Date
JP2016528727A JP2016528727A (ja) 2016-09-15
JP2016528727A5 JP2016528727A5 (enExample) 2017-07-27
JP6407992B2 true JP6407992B2 (ja) 2018-10-17

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JP2016525483A Expired - Fee Related JP6407992B2 (ja) 2013-07-11 2014-07-10 ビットセルおよび論理区画を有するモノリシック３次元（３ｄ）ランダムアクセスメモリ（ｒａｍ）アレイアーキテクチャ

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US (1) US20150019802A1 (enExample)
EP (1) EP3020045A1 (enExample)
JP (1) JP6407992B2 (enExample)
KR (1) KR20160029835A (enExample)
CN (1) CN105378843A (enExample)
WO (1) WO2015006563A1 (enExample)

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* Cited by examiner, † Cited by third party
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CN108292514B (zh) 2015-11-06 2022-04-29 卡弗科学有限公司 电熵存储器设备
US9929149B2 (en) 2016-06-21 2018-03-27 Arm Limited Using inter-tier vias in integrated circuits
CN115188591A (zh) 2016-12-02 2022-10-14 卡弗科学有限公司 存储设备和电容储能设备
GB2563473B (en) * 2017-06-15 2019-10-02 Accelercomm Ltd Polar coder with logical three-dimensional memory, communication unit, integrated circuit and method therefor
CN110603640B (zh) * 2017-07-17 2023-06-27 美光科技公司 存储器电路系统
JP7338975B2 (ja) 2018-02-12 2023-09-05 三星電子株式会社 半導体メモリ素子
FR3089678B1 (fr) 2018-12-11 2021-09-17 Commissariat Energie Atomique Memoire ram realisee sous la forme d’un circuit integre 3d
US11469214B2 (en) 2018-12-22 2022-10-11 Xcelsis Corporation Stacked architecture for three-dimensional NAND
US11139283B2 (en) 2018-12-22 2021-10-05 Xcelsis Corporation Abstracted NAND logic in stacks
EP4024222A1 (en) 2021-01-04 2022-07-06 Imec VZW An integrated circuit with 3d partitioning
CN115996200A (zh) * 2021-10-15 2023-04-21 西安紫光国芯半导体有限公司 3d-ic基带芯片、堆叠芯片及数据处理方法
US20240008239A1 (en) * 2022-07-01 2024-01-04 Intel Corporation Stacked sram with shared wordline connection
CN116741227B (zh) * 2023-08-09 2023-11-17 浙江力积存储科技有限公司 一种三维存储器架构及其操作方法和存储器

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US5089993B1 (en) * 1989-09-29 1998-12-01 Texas Instruments Inc Memory module arranged for data and parity bits
JP3707888B2 (ja) * 1996-02-01 2005-10-19 株式会社日立製作所 半導体回路
US5673227A (en) * 1996-05-14 1997-09-30 Motorola, Inc. Integrated circuit memory with multiplexed redundant column data path
KR100699421B1 (ko) * 1999-02-23 2007-03-26 가부시키가이샤 히타치세이사쿠쇼 반도체집적회로장치
JP4421957B2 (ja) * 2004-06-29 2010-02-24 日本電気株式会社 ３次元半導体装置
EP2248130A1 (en) * 2008-02-19 2010-11-10 Rambus Inc. Multi-bank flash memory architecture with assignable resources
US7894230B2 (en) * 2009-02-24 2011-02-22 Mosaid Technologies Incorporated Stacked semiconductor devices including a master device
TW201207852A (en) * 2010-04-05 2012-02-16 Mosaid Technologies Inc Semiconductor memory device having a three-dimensional structure
US8273610B2 (en) * 2010-11-18 2012-09-25 Monolithic 3D Inc. Method of constructing a semiconductor device and structure
JP2012083243A (ja) * 2010-10-13 2012-04-26 Elpida Memory Inc 半導体装置及びそのテスト方法
US9257152B2 (en) * 2012-11-09 2016-02-09 Globalfoundries Inc. Memory architectures having wiring structures that enable different access patterns in multiple dimensions

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EP3020045A1 (en) 2016-05-18
JP2016528727A (ja) 2016-09-15
KR20160029835A (ko) 2016-03-15
US20150019802A1 (en) 2015-01-15
CN105378843A (zh) 2016-03-02
WO2015006563A1 (en) 2015-01-15

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