KR20160029835A - 비트 셀 및 로직 패터닝을 갖는 모놀리식 3차원(3d) 랜덤 액세스 메모리(ram) 어레이 아키텍처 - Google Patents

비트 셀 및 로직 패터닝을 갖는 모놀리식 3차원(3d) 랜덤 액세스 메모리(ram) 어레이 아키텍처 Download PDF

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KR20160029835A
KR20160029835A KR1020167003141A KR20167003141A KR20160029835A KR 20160029835 A KR20160029835 A KR 20160029835A KR 1020167003141 A KR1020167003141 A KR 1020167003141A KR 20167003141 A KR20167003141 A KR 20167003141A KR 20160029835 A KR20160029835 A KR 20160029835A
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South Korea
Prior art keywords
ram
tier
3dic
disposed
data bank
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KR1020167003141A
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English (en)
Korean (ko)
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프랏유쉬 카말
양 두
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퀄컴 인코포레이티드
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Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • H01L27/0688—
    • H01L27/108—
    • H01L27/11—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
KR1020167003141A 2013-07-11 2014-07-10 비트 셀 및 로직 패터닝을 갖는 모놀리식 3차원(3d) 랜덤 액세스 메모리(ram) 어레이 아키텍처 Withdrawn KR20160029835A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361845044P 2013-07-11 2013-07-11
US61/845,044 2013-07-11
US14/012,478 US20150019802A1 (en) 2013-07-11 2013-08-28 Monolithic three dimensional (3d) random access memory (ram) array architecture with bitcell and logic partitioning
US14/012,478 2013-08-28
PCT/US2014/046152 WO2015006563A1 (en) 2013-07-11 2014-07-10 A monolithic three dimensional (3d) random access memory (ram) array architecture with bitcell and logic partitioning

Publications (1)

Publication Number Publication Date
KR20160029835A true KR20160029835A (ko) 2016-03-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167003141A Withdrawn KR20160029835A (ko) 2013-07-11 2014-07-10 비트 셀 및 로직 패터닝을 갖는 모놀리식 3차원(3d) 랜덤 액세스 메모리(ram) 어레이 아키텍처

Country Status (6)

Country Link
US (1) US20150019802A1 (enExample)
EP (1) EP3020045A1 (enExample)
JP (1) JP6407992B2 (enExample)
KR (1) KR20160029835A (enExample)
CN (1) CN105378843A (enExample)
WO (1) WO2015006563A1 (enExample)

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CN108292514B (zh) 2015-11-06 2022-04-29 卡弗科学有限公司 电熵存储器设备
US9929149B2 (en) 2016-06-21 2018-03-27 Arm Limited Using inter-tier vias in integrated circuits
CN115188591A (zh) 2016-12-02 2022-10-14 卡弗科学有限公司 存储设备和电容储能设备
GB2563473B (en) * 2017-06-15 2019-10-02 Accelercomm Ltd Polar coder with logical three-dimensional memory, communication unit, integrated circuit and method therefor
CN110603640B (zh) * 2017-07-17 2023-06-27 美光科技公司 存储器电路系统
JP7338975B2 (ja) 2018-02-12 2023-09-05 三星電子株式会社 半導体メモリ素子
FR3089678B1 (fr) 2018-12-11 2021-09-17 Commissariat Energie Atomique Memoire ram realisee sous la forme d’un circuit integre 3d
US11469214B2 (en) 2018-12-22 2022-10-11 Xcelsis Corporation Stacked architecture for three-dimensional NAND
US11139283B2 (en) 2018-12-22 2021-10-05 Xcelsis Corporation Abstracted NAND logic in stacks
EP4024222A1 (en) 2021-01-04 2022-07-06 Imec VZW An integrated circuit with 3d partitioning
CN115996200A (zh) * 2021-10-15 2023-04-21 西安紫光国芯半导体有限公司 3d-ic基带芯片、堆叠芯片及数据处理方法
US20240008239A1 (en) * 2022-07-01 2024-01-04 Intel Corporation Stacked sram with shared wordline connection
CN116741227B (zh) * 2023-08-09 2023-11-17 浙江力积存储科技有限公司 一种三维存储器架构及其操作方法和存储器

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US5089993B1 (en) * 1989-09-29 1998-12-01 Texas Instruments Inc Memory module arranged for data and parity bits
JP3707888B2 (ja) * 1996-02-01 2005-10-19 株式会社日立製作所 半導体回路
US5673227A (en) * 1996-05-14 1997-09-30 Motorola, Inc. Integrated circuit memory with multiplexed redundant column data path
KR100699421B1 (ko) * 1999-02-23 2007-03-26 가부시키가이샤 히타치세이사쿠쇼 반도체집적회로장치
JP4421957B2 (ja) * 2004-06-29 2010-02-24 日本電気株式会社 ３次元半導体装置
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US7894230B2 (en) * 2009-02-24 2011-02-22 Mosaid Technologies Incorporated Stacked semiconductor devices including a master device
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JP2012083243A (ja) * 2010-10-13 2012-04-26 Elpida Memory Inc 半導体装置及びそのテスト方法
US9257152B2 (en) * 2012-11-09 2016-02-09 Globalfoundries Inc. Memory architectures having wiring structures that enable different access patterns in multiple dimensions

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Publication number Publication date
EP3020045A1 (en) 2016-05-18
JP6407992B2 (ja) 2018-10-17
JP2016528727A (ja) 2016-09-15
US20150019802A1 (en) 2015-01-15
CN105378843A (zh) 2016-03-02
WO2015006563A1 (en) 2015-01-15

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Patent event date: 20160203

Patent event code: PA01051R01D

Comment text: International Patent Application

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PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid