JP6398221B2 - Release film for producing resin-encapsulated semiconductor device, method for producing release film for producing resin-encapsulated semiconductor device, and method for producing resin-encapsulated semiconductor device - Google Patents

Description

  The present invention relates to a release film for manufacturing a resin-encapsulated semiconductor device, a method for manufacturing a release film for manufacturing a resin-encapsulated semiconductor device, and a method for manufacturing a resin-encapsulated semiconductor device.

  Conventionally, as a manufacturing method of an optical device, a release film is disposed along a cavity in a mold in which a cavity is formed, and the cavity is filled with a curable composition, and light provided on a support is provided. A method is used in which the curable composition is integrated by molding the curable composition with the support pressed against the mold so that the element is inserted into the curable composition in the cavity. As this release film, a fluororesin film, a polyester resin film, and a polyolefin resin film are used (Patent Document 1).

JP 2010-245477 A

  However, the fluororesin film has a drawback that the cost of the film becomes high. In addition, the polyester resin film has a drawback that it is difficult to release during molding of the curable composition. In addition, the polyolefin resin film has a drawback that holes are formed during molding of the curable composition.

  An object of the present invention is to release a resin-encapsulated semiconductor device that can easily mold a resin-encapsulated semiconductor device, does not open a hole at the time of encapsulating resin molding, and can mold a resin-encapsulated semiconductor device at low cost. It is providing the manufacturing method of a mold film, a mold release film for semiconductor device manufacture, and the manufacturing method of a resin sealing semiconductor device using the same.

Such an object is achieved by the present invention described in the following (1) to (6).
(1) A method for manufacturing a resin-encapsulated semiconductor device according to one aspect of the present invention includes a step of providing a semiconductor device including a semiconductor element, a step of providing a mold having a recess on a surface, a cushion layer including a polyamide resin, A release layer having a release layer provided on at least one surface of the cushion layer, and a step of fixing the release film to the mold so as to follow at least the recess, and a sealing resin on the release film including the inside of the recess Alternatively, a step of supplying a sealing resin precursor, a step of arranging a semiconductor device and a mold so that the semiconductor element is immersed in the sealing resin or in the sealing resin precursor, and the semiconductor element described above A step of curing the sealing resin or the sealing resin precursor in a state of being immersed in the sealing resin or the sealing resin precursor.
(2) The method for producing a resin-encapsulated semiconductor device according to another aspect of the present invention is characterized in that, in the method for producing a resin-encapsulated semiconductor device, the release film has a puncture strength of 5.5 N or more. To do.
(3) A method for manufacturing a resin-encapsulated semiconductor device according to another aspect of the present invention is characterized in that, in the method for manufacturing a resin-encapsulated semiconductor device, the semiconductor element is an optical element.
(4) A release film for manufacturing a resin-encapsulated semiconductor device according to an aspect of the present invention is a sealing resin molding process for a resin-encapsulated semiconductor device in which a semiconductor device is resin-encapsulated. A release film disposed on the substrate, comprising: a cushion layer containing a polyamide resin; and a release layer provided on at least one surface of the cushion layer.
(5) The release film for manufacturing a resin-encapsulated semiconductor device according to another aspect of the present invention is the release film for manufacturing a resin-encapsulated semiconductor device, and the release film has a piercing strength of 5.5 N or more. It is characterized by being.
(6) A method of manufacturing a release film for manufacturing a resin-encapsulated semiconductor device according to one aspect of the present invention includes: a mold and the semiconductor device in a sealing resin molding process of a resin-encapsulated semiconductor device that encapsulates a semiconductor device And a release layer provided on at least one surface of the cushion layer, the process comprising extruding a release layer disposed between the cushion layer and the polyamide resin. And

  The release film of the present invention can easily remove the resin-encapsulated semiconductor device, does not open a hole in the encapsulating resin molding process, and can form the resin-encapsulated semiconductor device at low cost. . The method for producing a release film of the present invention can easily remove a resin-encapsulated semiconductor device, and can produce a release film that does not open a hole in an encapsulating resin molding process. Furthermore, the resin-encapsulated semiconductor device of the present invention can be molded easily and at low cost by using the release film.

It is a side view explaining the manufacturing method of the resin sealing semiconductor device which concerns on embodiment of this invention. It is a side view explaining the manufacturing method of the resin sealing semiconductor device which concerns on embodiment of this invention. It is a side view explaining the manufacturing method of the resin sealing semiconductor device which concerns on embodiment of this invention. It is a side view explaining the manufacturing method of the resin sealing semiconductor device which concerns on embodiment of this invention. It is a side view explaining the manufacturing method of the resin sealing semiconductor device which concerns on embodiment of this invention. It is a side view explaining the manufacturing method of the resin sealing semiconductor device which concerns on embodiment of this invention. It is a side view explaining the manufacturing method of the resin sealing semiconductor device which concerns on embodiment of this invention. It is a longitudinal cross-sectional view of the release film which concerns on embodiment of this invention. It is a release film longitudinal cross-sectional view which concerns on the modification of embodiment of this invention. It is the schematic which shows the manufacturing apparatus of the release film for demonstrating the manufacturing method of the release film which concerns on embodiment of this invention, and its modification.

<Method for manufacturing resin-encapsulated semiconductor device>
A method for manufacturing a resin-encapsulated semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. The method for producing a resin-encapsulated semiconductor according to the present embodiment includes an encapsulating resin molding process including at least a release film installation process, an encapsulating resin supply process, a semiconductor element dipping process, and an encapsulating resin curing process.

  First, as shown in FIG. 1, a semiconductor device 100 is provided. The semiconductor device 100 includes a support 110 and one or a plurality of semiconductor elements 120 fixed to the support 110. Examples of the semiconductor element 120 include optical elements such as a light emitting element and a light receiving element. An LED chip (light emitting diode) is exemplified as the light emitting element, and an image sensor is exemplified as the light receiving element. The support 110 is a substrate formed in an arbitrary shape such as a circular shape or a polygonal shape. Examples of the support 110 include ceramic substrates, silicone substrates, metal substrates, rigid substrates such as epoxy resins and BT resins, or flexible substrates such as polyimide resins and polyethylene substrates. The semiconductor device 100 is obtained by electrically connecting an electrode pad on a circuit wiring provided on the support 110 and an electrode provided on the semiconductor element 120. The electrode pad of the support 110 and the electrode of the semiconductor element 120 may be connected by wire bonding with a wire 130 as shown in FIG. 1, or the electrode pad of the support 110 and the electrode of the semiconductor element 120 are opposed to each other. Then, they may be connected by flip chip mounting that electrically connects them. The support 110 may be provided with an external lead or the like electrically connected to the circuit wiring.

  As the LED chip, indium nitride (InN), aluminum nitride (AlN), gallium nitride (GaN), zinc selenide (ZnSe), silicon carbide (SiC), etc. on the substrate by a liquid phase growth method, MOCVD method or the like. Gallium phosphide (GaP), gallium arsenide (GaAs), gallium aluminum arsenide (GaAlAs), gallium aluminum nitride (GaAlN), aluminum indium gallium phosphide (AlInGaP), indium gallium nitride (InGaN), aluminum indium gallium nitride (InGa) It is preferable that a semiconductor such as AlInGaN) is formed as the light emitting portion. Examples of the wire 130 include a gold wire or an aluminum wire.

  Next, a release film installation process is demonstrated. In the release film installation step, as shown in FIGS. 2 and 3, the release film 200 is disposed along the surface of the mold 300 on which the concave portion 310 is provided. Examples of the mold 300 include a mold and a resin mold. The mold 300 may have a stepped flat portion 340 on the outer periphery. The release film 200 will be described in detail later. If a release film installation process is demonstrated in order, as shown in FIG. 2, the release film 200 will be arrange | positioned in the surface side in which the recessed part 310 of the type | mold 300 was provided. Thereafter, as shown in FIG. 3, the release film 200 is disposed along the surface including the recess 310 of the mold 300 so that the release film 200 is fixed to substantially the entire surface of at least the recess 310 of the mold 300. This is because air, moisture, gas, etc. in the space between the release film 200 and the mold 300 are sucked and discharged through a vent hole 320 as shown in FIG. 3 by a suction device (not shown), This is performed by drawing the release film 200 into the recess 310 of the mold 300 and vacuum-sucking it. The release film 200 may be disposed in the recess 310 of the mold 300 and along the surface of the flat portion 330. Further, in order to firmly fix the release film 200 to the mold 300, it is arranged at a position corresponding to the outer periphery of the sealing resin injection region, the outer periphery of the entire release film 200, or the outer periphery of the entire mold 300. The release film 200 may be clamped by the chuck mechanism. The release film installation step may be performed simultaneously with the step of providing the semiconductor device 100, before the step of providing the semiconductor device 100, or after the step of providing the semiconductor device 100.

  After the release film installation step, a sealing resin supply step is performed. In the sealing resin supply process, as shown in FIGS. 3 and 4, the sealing resin or the sealing resin precursor is placed on the release recess 311 where at least the release film 200 of the mold 300 is fixed along the surface. A sealing resin 400 or the like is supplied. In this specification, the sealing resin or the sealing resin precursor is referred to as a sealing resin 400 or the like. As shown in FIG. 4, the sealing resin 400 is disposed in the mold release recess 311 through the mold release film 200 and above the plane part of the mold 300 or through the mold release film 200 excluding the plane part of the mold 300. Is supplied only to the inside of the mold release recess 311. Examples of the sealing resin 400 include a silicone resin, an epoxy resin, an acrylic resin, a fluorine resin, a polyimide resin, a silicone deformed epoxy resin, or a mixture thereof. . As a sealing resin precursor, one kind of each resin precursor before being subjected to a curing treatment such as a silicone resin, an epoxy resin, an acrylic resin, a fluorine resin, a polyimide resin, a silicone deformation epoxy resin, etc. Or a mixture thereof. It has excellent weather resistance, heat resistance, electrical insulation, chemical stability, and high light transmittance from the visible light to the ultraviolet light region. Therefore, as the sealing resin 400, a silicone resin or a silicone resin precursor is used. Is preferably used. Moreover, when the semiconductor element 120 is an LED chip, it is preferable to use a silicone resin, a silicone resin precursor, an epoxy resin, an epoxy resin precursor, and a mixture thereof as the sealing resin 400. These are because they have a sufficient refractive index to greatly improve the light extraction from the LED chip and to serve as a lens. Furthermore, when the semiconductor element 120 is an optical element, it is preferable to use a translucent resin or a translucent resin precursor as the sealing resin 400. Thereby, the sealing resin layer 401 formed by the sealing resin 400 can transmit light to the light receiving part or the light emitting part of the optical element. The sealing resin 400 may be supplied in the form of granules, liquid, or sheet. The sealing resin 400 or the like may further include fine particles made of an inorganic material.

  After the step of supplying the sealing resin, etc., a semiconductor element dipping step is performed. In the semiconductor element dipping step, as shown in FIG. 4, the surface of the semiconductor device 100 on which the semiconductor element 120 is provided and the surface on which the concave portion 310 of the mold 300 is provided are opposed to each other. And place. Next, as shown in FIG. 5, by moving at least one of the semiconductor device 100 and the mold 300 and pressing the semiconductor device 100 against the mold 300, the semiconductor element 120 and a semiconductor element such as a bonding wire 130 are obtained. 120 and the electrical connection portion of the support 110 are covered with a sealing resin 400 or the like above the mold 300. At this time, at least a part of the semiconductor element 120 is disposed in the recess 310 or above the recess 310. When the semiconductor element 120 is an optical element, at least a part of the semiconductor element 120 is a light receiving part or a light emitting part of the optical element. When the semiconductor device 100 is pressed against the mold 300, the support 110 of the semiconductor device 100 is in contact with the stepped flat portion 340 of the mold 300 and the flat portion 330 is not in contact with the support 110. Alternatively, the support plate 110 may be in contact with the flat surface portion 330 without having the step flat surface portion 340 in the mold 300.

  After the semiconductor element dipping process, a curing process such as a sealing resin is performed. In the sealing resin etc. curing step, as shown in FIG. 6, the semiconductor element 120 and the electrical connection portion of the semiconductor element 120 such as the bonding wire 130 and the support 110 are connected to the sealing resin etc. 400 above the mold 300. In the state covered with, the sealing resin 400 is cured to form the sealing resin layer 401, and the molded body 101 is manufactured. In this step, the sealing resin 400 is cured by cooling, heating, or irradiation with active energy rays. On the other hand, when the sealing resin 400 is a precursor of a curable resin, the sealing resin 400 is cured by heating or irradiation with active energy rays. Examples of the active energy rays include radiation, ultraviolet rays, visible rays, and electron beams.

  The sealing resin layer 401 is preferably bonded to both the support 110 and the semiconductor element 120. The sealing resin layer 401 is provided so as to cover at least the semiconductor element 120 and the electrical connection portion of the semiconductor element 120 such as the bonding wire 130 and the support 110, but supports between the adjacent semiconductor elements 120. The sealing resin layer 401 may not be provided on the surface of the body 110, and the adjacent sealing resin layers 401 may be spaced apart from each other, or the surface of the support 110 between the adjacent semiconductor elements 120. The top may be covered with a sealing resin layer 401. The sealing resin layer 401 may be a colorless resin or a resin containing a phosphor or the like. The shape of the sealing resin layer 401 is not particularly limited, and is generally a convex lens shape, a truncated cone shape, or a square truncated cone shape, but is preferably a convex lens shape or a concave lens shape. By forming the sealing resin layer 401 into a convex lens shape or a concave lens shape, the sealing resin layer 401 is not only used as a sealing resin for protecting the optical element from changes in the external environment such as humidity and temperature, but also as a lens of the optical element. Can also be used.

  A demolding process of the molded body 101 is included after the curing process of the sealing resin or the like. As shown in FIGS. 6 and 7, in the step of removing the molded body 101, the release film 200 is removed from the mold 300 by supplying air, moisture, gas, or the like to the portion including the recess 310 through the vent hole 320. At the same time, the molded body 101 is removed. The release film 200 is removed from the molded body 101. When the number of the semiconductor elements 120 provided on the support 110 is one, the molded body 101 becomes a resin-encapsulated semiconductor device.

  On the other hand, as shown in FIG. 7, in the case where there are a plurality of semiconductor elements 120 provided on the support 110, after the step of removing the molded body 101, the step of separating the molded body 101 into a resin-encapsulated semiconductor device is performed. May be included. In the singulation process, only the support 110 is cut by a dicing saw, laser, band saw, wire saw, water jet, or the like, or the sealing resin layer 401 and the support 110 are cut or broken to form a plurality of molded bodies 101. Separated into individual resin-encapsulated semiconductor devices.

<Details of release film>
The release film 200 according to the embodiment of the present invention includes a release layer 210 and a cushion layer 220 as shown in FIG. In the method for manufacturing the resin-encapsulated semiconductor device, the release film 200 is disposed on the mold 300 such that the release layer 210 is disposed on the semiconductor device 100 side and the cushion layer 220 is disposed on the mold 300 side. That is, the release film 200 is disposed so that the sealing resin 400 and the sealing resin layer 401 are provided on the release layer 210 and the cushion layer 220 is in contact with the mold 300. In the present embodiment, the thickness of the release film 200 is preferably 25 μm or more and 300 μm or less. When the thickness of the release film 200 is less than 25 μm, holes are easily opened in the sealing resin molding process, and when it is thicker than 300 μm, the release film 200 is placed on the mold and molded. Only the mold becomes small, and a molded product having a desired size cannot be obtained.

Hereinafter, each of these layers will be described in detail.
<Composition layer of release film>
1. Peeling layer Peeling layer 210 is a layer having good peelability to sealing resin 400 and sealing resin layer 401, and poly (4-methyl-1-pentene) as a main component as a peeling layer forming material. It is preferable to use what is included. As the release layer 210, a layer having higher release properties with respect to the sealing resin 400 and the sealing resin layer 401 than the cushion layer 220 is preferable. A resin containing poly (4-methyl-1-pentene) as a main component is commercially available from Mitsui Chemicals, Inc. under the trade name TPX (registered trademark), and is hereinafter referred to as “TPX resin”. Note that in this embodiment, the thickness of the peeling layer 210 is preferably 5 μm or more and 295 μm or less, and more preferably 10 μm or more and 290 μm or less. When the thickness of the release layer 210 is within this range, the release film 200 having good peelability is obtained without impairing the effect of the cushion layer. The release layer 210 is preferably one that does not contain or substantially does not contain a polyamide resin.

  In the release layer 210, the TPX resin is preferably contained in an amount of 90% by weight or more, more preferably 95% by weight or more based on the total weight of the release layer forming material. When the TPX resin is contained by 90% by weight or more, the peelability of the molded body 101 is improved. The TPX resin has a melt flow rate (MFR: measurement standard / ASTM D1238, measurement condition / 260 ° C., 5 kg load) of 30 g / 10 min or more and preferably 300 g / 10 min or less, and 40 g / min. More preferably, it is 10 min or more and 200 g / 10 min or less. When the melt flow rate is within this range, the smoothness of the release film 200 is improved and the appearance of the molded body 101 is improved.

  In addition to TPX resin containing poly (4-methyl-1-pentene) as release layer forming material, various additives such as anti-blocking agent, antioxidant, nucleating agent, antistatic agent, process oil, plasticizer At least one of a mold release agent, a flame retardant, a flame retardant aid, a pigment, and the like may be blended.

2. Cushion layer The cushion layer 220 includes a polyamide resin as a cushion layer forming material in the present embodiment. Examples of the polyamide resin include aliphatic polyamide and aromatic polyamide. By using the polyamide resin, toughness is imparted to the cushion layer 220 by hydrogen bonding of the amide group in the polyamide, and the piercing strength of the release film 200 becomes 5.5 N or more. Thereby, in the manufacturing method of the resin-encapsulated semiconductor device, the mold can be formed without opening the release film 200 in the encapsulating resin molding process. The puncture strength of the cushion layer 220 is preferably higher than the puncture strength of the release layer 210.

  Specific examples of the aliphatic polyamide include polyamide 6, polyamide 6,6, polyamide 6-6,6 copolymer, polyamide 11, polyamide 12, and the like. Specific examples of the aromatic polyamide include polyamide 61, polyamide 66 / 6T, polyamide 6T / 6, polyamide 12 / 6T, and the like. Among these, polyamide 6, polyamide 6,6, polyamide 6-6,6 copolymer of aliphatic polyamide, polyamide 11 and polyamide 12 have polyamide 6 ((MFR: measurement method / ASTM D1238, measurement), respectively. Conditions / 230 ° C., 2.16 kg load) 40 g / 10 min), polyamide 6,6 ((MFR: ASTM D1238, measurement conditions / 275 ° C., 2.16 kg load) 52 g / 10 min), polyamide 6-6, 6 Copolymer ((MFR: measurement method / ASTM D1238, measurement conditions / 275 ° C., 2.16 kg load) 60 g / 10 min), polyamide 11 ((MFR: measurement method / ASTM D1238, measurement conditions / 260 ° C., 2. 16 kg load) 42 g / 10 min), polyamide 12 ((MFR: measurement method / ASTM D123) 8. Measurement conditions / 235 ° C., 2.16 kg load) 20 g / 10 min) and TPX resin ((MFR: measurement method / ASTM D1238, measurement conditions / 260 ° C., 5 kg load) 100 g / 10 min) Therefore, it is easy to match the melt flow rate of TPX resin with at least one of polyamide 6, polyamide 6,6, polyamide 6-6,6 copolymer, polyamide 11 and polyamide 12 of aliphatic polyamide. For this reason, when the release layer 210 includes poly (4-methyl-1-pentene), the cushion layer 220 includes at least polyamide 6, polyamide 6,6, polyamide 6-6,6 copolymer, polyamide 11, and polyamide 12. Preferably one is included.

  The melt flow rate (MFR: measurement method / ASTM D1238, measurement conditions / 230 ° C., 2.16 kg load) of the polyamide resin is preferably 20 g / 10 min or more and 300 g / 10 min or less, preferably 30 g / 10 min or more. And more preferably 200 g / 10 min or less. When the melt flow rate is within this range, both the TPX resin and the polyamide resin are easily mixed, and the release film 200 having good physical properties can be obtained.

The cushion layer 220 preferably contains an olefin polymer and / or an olefin copolymer. Examples of the olefin polymer include propylene-based, butene-based, hexene-based, octene-based, and decene-based polymers and / or copolymers. Among these, it is more preferable to use a propylene polymer and a butene polymer for the cushion layer 220.
This is because these improve the moldability of the release film 200.

  The melt flow rate of the olefin polymer or olefin copolymer (measurement method / ASTM D1238, measurement conditions / 190 ° C., 2.16 kg load) is preferably 0.01 g / 10 min or more and 500 g / 10 min or less, more preferably. Is 0.1 g / 10 min or more and 100 g / 10 min or less. When the melt flow rate is in the above range, when the cushion layer 220 contains poly-4-methyl-1-pentene, the poly-4-methyl-1-pentene is easily mixed with the olefin polymer or olefin copolymer. Become.

  The cushion layer 220 preferably includes at least one of a resin similar to the resin contained in the release layer forming material and its modified resin, and a polyamide resin. For example, when the release layer-forming material contains poly-4-methyl-1-pentene, the cushion layer-forming material is made of at least one of poly-4-methyl-1-pentene and modified poly-4-methyl-1-pentene. And a polyamide resin. Thereby, peeling with a peeling layer and a cushion layer can be reduced. In the release film using only the polyamide resin as the cushion layer 220, since the adhesive force with the release layer 210 is weak, peeling between the release layer 210 and the cushion layer 220 is likely to occur in the release process. Therefore, by blending the release layer forming material with the cushion layer forming material, the adhesive force between the release layer 210 and the cushion layer 220 becomes strong, and peeling occurs between the cushion layer 210 and the release layer 220 when demolding. First, it is possible to remove the mold without opening a hole in the release film 200 in the sealing resin molding process.

Modified poly-4-methyl-1-pentene is obtained by graft-modifying an ethylenically unsaturated bond-containing monomer to poly-4-methyl-1-pentene using an organic peroxide.
The types of functional groups that the modified poly-4-methyl-1-pentene has are halogen atoms, carboxyl groups, acid anhydride groups, epoxy groups, hydroxyl groups, amino groups, amide groups, imide groups, ester groups, alkoxysilane groups. And acid halide groups and nitrile groups. As the functional group capable of reacting with the reactive functional group of the polyamide, the functional group of the modified poly-4-methyl-1-pentene may include a carboxyl group, an acid anhydride group, or a derivative thereof. It is preferable because of its high reactivity.

  The ethylenically unsaturated bond-containing monomer is at least one selected from the group consisting of unsaturated carboxylic acids and derivatives thereof, hydroxyl group-containing ethylenically unsaturated compounds, and epoxy group-containing ethylenically unsaturated compounds, or two of these. A combination of more than one species can be mentioned. Of the ethylenically unsaturated bond-containing monomers, maleic anhydride is most preferred because of its high reactivity with the terminal amino group of the polyamide.

  Unsaturated carboxylic acids and their derivatives include malonyl chloride, maleimide, maleic anhydride, citraconic anhydride, nadic acid anhydride, (meth) acrylic acid, nadic acid, maleic acid, monomethyl maleate, dimethyl maleate and (meth) Examples thereof include at least one selected from the group consisting of methyl acrylate or a combination of two or more thereof.

  Examples of the hydroxyl group-containing ethylenically unsaturated compound include 10-undecen-1-ol, 1-octen-3-ol, 2-methanol norbornene, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, hydroxy Styrene, hydroxyethyl vinyl ether, hydroxybutyl vinyl ether, N-methylol (meth) acrylamide, 2- (meth) acryloyloxyethyl acid phosphate, glycerol monoallyl ether, allyl alcohol, allyloxyethanol, 2-butene-1,4-diol And at least one selected from the group consisting of glycerin monoalcohol or a combination of two or more thereof.

  Examples of the epoxy group-containing ethylenically unsaturated compound include at least one selected from the group consisting of glycidyl acrylate and glycidyl methacrylate, or a combination of two or more thereof.

  The organic peroxide is not particularly limited as long as it can graft-modify an ethylenically unsaturated bond-containing monomer to poly-4-methyl-1-pentene, and a known one can be used. Organic peroxides include t-butylperoxybenzoate, 2,5-dimethyl-2,5-bis (t-butylperoxy) hexane, 2,5-dimethyl-2,5-bis (t-butylperoxy) hexyne -3, t-butylperoxy-2-ethylhexanoate and at least one selected from the group consisting of dicumyl peroxide or a combination of two or more thereof.

<Method for producing modified poly-4-methyl-1-pentene>
Modified poly-4-methyl-1-pentene is produced by graft-modifying poly-4-methyl-1-pentene, an ethylenically unsaturated bond-containing monomer, and an organic peroxide under heating conditions. Is done.

  As a modification method of poly-4-methyl-1-pentene, using a single-screw or twin-screw extruder, poly-4-methyl-1-pentene which has been sufficiently premixed in advance, an ethylenically unsaturated bond-containing monomer and / or Or the derivative | guide_body and the organic peroxide are supplied from the supply port of an extruder, and the method of knead | mixing is mentioned.

  The cylinder temperature of the kneading part in the kneading machine is not particularly limited, but is preferably 200 ° C. or higher and 300 ° C. or lower, more preferably 220 ° C. or higher and 290 ° C. or lower. When the temperature is lower than 200 ° C., the graft amount in the modified poly-4-methyl-1-pentene may not be improved. When the temperature is higher than 300 ° C., the decomposition of poly-4-methyl-1-pentene is not achieved. May happen. The kneading time is not particularly limited, but is preferably 0.1 minutes or more and 30 minutes or less, more preferably 0.5 minutes or more and 5 minutes or less. If the kneading time is less than 0.1 minutes, a sufficient graft amount may not be obtained, and if the kneading time exceeds 30 minutes, the modified poly-4-methyl-1-pentene may be decomposed. .

  In the production method of modified poly-4-methyl-1-pentene, when it is produced by melt kneading, the blending ratio of each component is ethylenically unsaturated with respect to 100% by weight of poly-4-methyl-1-pentene. The bond-containing monomer is preferably 0.1% by weight or more and 20% by weight or less, more preferably 0.3% by weight or more and 10% by weight, still more preferably 0.5% by weight or more and 5% by weight. %, And the organic peroxide is preferably 0.001% by weight or more and 10% by weight or less, more preferably 0.005% by weight or more and 5% by weight or less, and further preferably 0.01% by weight. The content is 4% by weight or less.

  The modified poly-4-methyl-1-pentene obtained as described above has a carboxyl group, an acid anhydride group or a derivative thereof, an epoxy group, a hydroxyl group, an amino group, depending on the type of the ethylenically unsaturated bond-containing monomer used. Group, amide group, imide group, ester group, alkoxysilane group, acid halide group, aromatic ring and nitrile group, preferably carboxyl group, acid anhydride group or derivatives thereof, amide group, ester group, It has an acid halide group, and more preferably has a carboxyl group, an acid anhydride group, an amide group, an ester group, and an acid halide group.

<Content of each component in the cushion layer>
The total amount of polyamide, poly-4-methyl-1-pentene, olefin polymer or olefin copolymer, and modified poly-4-methyl-1-pentene is 100% by weight, and the polyamide of the cushion layer 220 The content is 10% by weight or more and preferably 50% by weight or less, more preferably 20% by weight or more and 40% by weight or less. If it exists in said range, adhesion of the peeling layer 210 and the cushion layer 220 will not be impaired, and piercing strength will be 5.5 N or more.

  The total of the polyamide, poly-4-methyl-1-pentene, olefin polymer or olefin copolymer, and modified poly-4-methyl-1-pentene is 100% by weight. The content of 4-methyl-1-pentene is 30% by weight or more and preferably 70% by weight or less, more preferably 40% by weight or more and 60% by weight or less. If it exists in said range, peeling with the peeling layer 210 and the cushion layer 220 can be reduced, without causing the fall of a piercing strength.

  The total weight of the polyamide, poly-4-methyl-1-pentene, olefin polymer or olefin copolymer, and modified poly-4-methyl-1-pentene is 100% by weight. The content of the coalescence or olefin copolymer is 5% by weight or more and preferably 15% by weight or less. If it exists in said range, a moldability can be improved, without impairing the heat resistance of the cushion layer 220. FIG.

  The total amount of polyamide, poly-4-methyl-1-pentene, olefin polymer or olefin copolymer, and modified poly-4-methyl-1-pentene is 100% by weight, and the modified poly of the cushion layer 220 is used. The content of -4-methyl-1-pentene is 2% by weight or more and preferably 8% by weight or less. If it is in the above range, the compatibilization of the polyamide, poly-4-methyl-1-pentene, and the olefin polymer or olefin copolymer progressed, and the peelability possessed by poly-4-methyl-1-pentene was maintained. The piercing strength of the polyamide can be exhibited as it is, and the moldability can be improved by the olefin polymer or olefin copolymer.

  In the present embodiment, the thickness of the cushion layer 220 is preferably 5 μm or more and 295 μm or less, more preferably 10 μm or more and 290 μm or less. When the thickness of the cushion layer 220 is within this range, the release film 200 having good peelability is obtained without impairing the toughness of the cushion layer 220.

<Method for producing release film>
The release film 200 according to the present embodiment can be manufactured by a method including an extrusion process in which the release layer 210 and the cushion layer 220 are extruded by a coextrusion method, an extrusion lamination method, or the like.

  In the coextrusion method, the release film 200 is manufactured by simultaneously extruding the release layer forming material and the cushion layer forming material using a feed block, a multi-manifold die, or the like. As shown in FIG. 10, in the coextrusion method, the melt M in which the release layer forming material and the cushion layer forming material that have passed through the die 510 are laminated is fed in the film feeding direction indicated by the arrow. Then, it is guided to the first roll 530 and fixed to the first roll 530 by the touch roll 520, and is cooled by the first roll 530 until it is detached from the first roll 530, thereby forming the release film 200. . Thereafter, the release film 200 is fed further downstream in the film feeding direction indicated by the arrow by the second roll 540, and taken up by a take-up roll (not shown). At this time, the temperature of the first roll 530 is preferably 30 ° C. to 100 ° C., the temperature of the touch roll 520 is preferably 30 ° C. to 100 ° C., and the temperature of the second roll 540 relative to the first roll 530 is The peripheral speed ratio is preferably 0.990 to 0.998.

  In the extrusion laminating method, the temperature of the extruder cylinder is set to 200 to 300 ° C., the release layer forming material is extruded, and the release layer film F and the cushion layer film are joined by joining the release layer film F with the cushion layer film. The release film 200 is manufactured by laminating. In the extrusion laminating method, as shown in FIG. 10, the melt M of the release layer forming material that has passed through the die 510 is guided to the first roll 530 and fixed to the first roll 530 by the touch roll 520. The film is cooled by the first roll 530 until it is detached from the first roll 530, and becomes a release layer film F. Thereafter, the release layer film F is fed further downstream in the film feeding direction indicated by the arrow by the second roll 540. And the release layer film F sent to the film feed direction downstream side is joined with the release layer film F by the cushion layer film formed of the cushion layer forming material, and the release film 200 is manufactured. In addition, the release film 200 manufactured in this way is further wound up by the winding roll (not shown) provided in the film feed direction downstream side. At this time, the temperature of the first roll 530 is preferably 30 ° C. to 100 ° C., the temperature of the touch roll 520 is preferably 30 ° C. to 100 ° C., and the second roll 540 with respect to the first roll 530 is used. The peripheral speed ratio is preferably 0.990 to 0.998.

  If necessary, the crystallinity of the TPX resin in the release film 200 obtained as described above may be adjusted by a known heat treatment apparatus. For example, a heat treatment may be performed in the vicinity of 50 ° C. to 220 ° C. using a method of heat-setting the release film 200 in a dryer using a tenter device or a heat treatment roll.

<Modification>
In the previous embodiment, the release film 200 in which the release layer 210 is provided only on one side of the cushion layer 220 has been described. However, as shown in FIG. 9, the release layer 210 a on both sides of the cushion layer 220, A release film 200A provided with 210b is also included in one embodiment of the present invention. Hereinafter, the release layer denoted by reference numeral 210a is referred to as a “first release layer”, and the release layer denoted by reference numeral 210b is referred to as a “second release layer”. The release film 200A is covered with the mold 300 such that the first release layer 210a is disposed on the semiconductor device 100 side and the second release layer 210b is disposed on the mold 300 side. That is, the release film 200A is arranged such that the sealing resin 400 and the sealing resin layer 401 are provided on the first release layer 210a, the second release layer 210b is in contact with the mold 300, and the cushion layer 220 is It arrange | positions between the 1st peeling layer 210a and the 2nd peeling layer 210b. An anchor layer or a primer layer (adhesive layer) may be further provided between the first release layer 210a and the cushion layer 220 and between the second release layer 210b and the cushion layer 220.

  The first release layer 210a has the same structure as the release layer 210 according to the previous embodiment. On the other hand, the second release layer 210b may have the same structure as the first release layer 210a, or may have a different structure from the first release layer 210a. In the latter case, the adhesive force between the second release layer 210b and the cushion layer 220 may be reduced. In such a case, an anchor layer or a primer layer (a primer layer (between the second release layer 210b and the cushion layer 220) An adhesive layer) may be interposed.

The release film 200A according to the embodiment of the present invention preferably has a puncture strength of 5.5N or more, and more preferably has a puncture strength of 5.7N or more and 20N or less.
If the piercing strength of the release film 200A is within this range, it can be formed without opening a hole in the release film 200A in the sealing resin molding process in the method for manufacturing a resin-encapsulated semiconductor device.

<Example>
Hereinafter, the present invention will be described in more detail with reference to examples.

Example 1
As the release layer forming material, TPX resin (TPI (registered trademark), DX310 manufactured by Mitsui Chemicals, Inc.) was used. As the cushion layer forming material, a resin composition prepared according to the following production example was used. Poly-4-methyl-1-pentene (manufactured by Mitsui Chemicals) DX310 is 100% by weight, maleic anhydride is 1% by weight, and 2,5-dimethyl-2,5-bis (t -Butylperoxy) 0.02% by weight of hexyne-3 was melt kneaded at a cylinder temperature of 270 ° C. with a twin screw extruder (Ikegai, PCM45, φ = 45 mm, L / D = 30). This was performed for 3 minutes to obtain maleic acid-modified poly-4-methyl-1-pentene (D) (MFR (measurement method / ASTM D1238, measurement conditions / 260 ° C., 5 kg load) 100 g / 10 minutes). The yield was 90%.

  Poly-4-methyl-1-pentene (A) is manufactured by Mitsui Chemicals, Inc. DX310 (MFR (measurement method / ASTM D1238, measurement conditions / 260 ° C., 5 kg load) 100 g / 10 min, melting point (Tm) 226 ° C.) Was used. Moreover, as polyamide (B), Ube Industries, Ltd. 1013B (Polyamide 6, MFR (measuring method / ASTM D1238, measuring conditions / 230 degreeC, 2.16 kg load) 40g / 10min) was used. As the olefin (co) polymer (C), BL4000 (1-butene homopolymer, MFR (measurement method / ASTM D1238, measurement conditions / 190 ° C., 2.16 kg load) manufactured by Mitsui Chemicals, Inc., 1.8 g / 10 min, melting point (Tm) 125 ° C.).

  The above poly-4-methyl-1-pentene (A), polyamide (B), olefin (co) polymer (C) and modified poly-4-methyl-1-pentene (D) are each shown in Table 1. Then, it was melt-kneaded with a twin-screw extruder (manufactured by Technobel Co., Ltd., KZW-15, screw diameter 15 mm, L / D = 30, temperature 270 ° C., rotation speed 200 rpm) to obtain a resin composition. Next, the release film (refer FIG. 9) which has the same peeling layer on the front and back of a cushion layer was produced using the co-extrusion method. Specifically, a release film was prepared by simultaneously extruding the TPX resin, the resin composition and the TPX resin using a feed block and a single layer die. In addition, the temperature of the 1st roll 530 at this time was 30 degreeC, the temperature of the touch roll 520 was 30 degreeC, and the peripheral speed ratio of the 2nd roll 540 with respect to the 1st roll 530 was 0.990. The release layer of the release film had a thickness of 15 μm on both sides, and the cushion layer had a thickness of 20 μm.

(Example 2)
BL3450 (butene / ethylene copolymer, MFR (measuring method / ASTM D1238, measuring conditions / 190 ° C., 2.16 kg load) 4 g / 10 min, melting point (made by Mitsui Chemicals, Inc.) as the olefin (co) polymer (C) Tm) Prepared in the same manner as in Example 1 except that 104 ° C.) was used.

(Example 3)
BL2481 (Butene / propylene copolymer, MFR (measurement method / ASTM D1238, measurement conditions / 190 ° C., 2.16 kg load)) 4 g / 10 min, melting point as olefin (co) polymer (C) (Tm) 75 ° C.) was used in the same manner as in Example 1.

Example 4
XM7070 (Propylene / Butene Copolymer, MFR (Measurement Method / ASTM D1238, Measurement Conditions / 230 ° C., 2.16 kg Load)) 7 g / 10 min, melting point as olefin (co) polymer (C) (Tm) 70 ° C.) was used in the same manner as in Example 1.

(Example 5)
F327 (Propylene / Ethylene Random Copolymer, MFR (Measurement Method / ASTM D1238, Measurement Conditions / 230 ° C., 2.16 kg Load)) 7 g / 10 min, manufactured by Prime Polymer Co., Ltd. as the olefin (co) polymer (C) This was prepared in the same manner as in Example 1 except that the melting point (Tm) was 138 ° C.

(Example 6)
Example 1 except that CM3001-N (polyamide 6,6, MFR (measurement method / ASTM D1238, measurement conditions / 275 ° C., 2.16 kg load) 52 g / 10 min) manufactured by Toray Industries, Inc. is used as the polyamide (B). It produced similarly.

(Example 7)
Implemented except that CM3301 (polyamide 6-6,6 copolymer, MFR (measuring method / ASTM D1238, measuring conditions / 275 ° C., 2.16 kg load) 60 g / 10 min) manufactured by Toray Industries, Inc. is used as the polyamide (B). Prepared in the same manner as in Example 1.

(Example 8)
As in Example 1, except that Rilsan BMNOP40D (polyamide 11, MFR (measurement method / ASTM D1238, measurement conditions / 230 ° C., 2.16 kg load) 42 g / 10 min) manufactured by ARKEMA is used as the polyamide (B). Produced.

Example 9
The same procedure as in Example 1 except that 3020U (polyamide 12, MFR (measuring method / ASTM D1238, measuring conditions / 235 ° C., 2.16 kg load) 20 g / 10 min) manufactured by Ube Industries, Ltd. is used as the polyamide (B). Produced.

(Example 10)
It was produced in the same manner as in Example 1 except that the thickness of the release layer was 5 μm on both sides.

(Example 11)
It was produced in the same manner as in Example 1 except that the thickness of the release layer was 10 μm on both sides.

(Example 12)
It was produced in the same manner as in Example 1 except that the peeling layer thickness was 145 μm on both sides and the cushion layer thickness was 10 μm.

(Example 13)
It was produced in the same manner as in Example 1 except that the thickness of the cushion layer was 5 μm.

(Example 14)
It was produced in the same manner as in Example 1 except that the thickness of the cushion layer was 10 μm.

(Example 15)
The cushion layer thickness was set to 290 μm, and the release layer thickness was set to 5 μm on both sides.

(Example 16)
This was prepared in the same manner as in Example 1 except that the amount of polyamide was 15% by weight and poly-4-methyl-1-pentene was 70.7% by weight.

(Example 17)
This was prepared in the same manner as in Example 1 except that the amount of polyamide was 45% by weight and poly-4-methyl-1-pentene was 40.7% by weight.

2. Evaluation of Release Film (1) Evaluation of Appearance of Molded Product of Release Film First, under the condition of a mold temperature of 125 ° C., the release film obtained as described above was divided into 100 hemispherical recesses (radius 1. 0 mm), the air in the hemispherical recess was discharged from the air hole at 700 Torr using an air suction machine, and the release film was placed along the mold surface having the hemispherical recess (FIGS. 2 and 3). reference).

Further, in the above-mentioned state, after injecting the curable silicone composition into the hemispherical recesses covered with the release film, the curable silicone composition is placed at a temperature of 125 ° C. while pressing the semiconductor device against the mold. Heat cured for 5 minutes. And, “A cured product of curable silicone composition having 100 of 100 transferred to a hemispherical recess” was evaluated as A, and “A cured product of curable silicone composition was 90 to 90 of 100 in a hemispherical recess. “99 transferred” was evaluated as B, and “less than 90 of 100 cured curable silicone compositions were transferred to a hemispherical recess” was evaluated as C.
In addition, as shown in Table 1, the external appearance of the hardened | cured material (molded article) obtained using the release film which concerns on a present Example was A and B evaluation.

(2) Evaluation of release film perforation After demolding, "A release film does not have a hole" is evaluated as A and "A release film has 1 or 2 holes" Was evaluated as B, and “two or more holes in the release film” were evaluated as C. In addition, as shown in Table 1, the release film which concerns on a present Example was A and B evaluation.

(3) Puncture strength of release film The puncture strength of the release film was measured using “Autograph AG-2000B manufactured by Shimadzu Corporation”. Specifically, after the release film was cut into a width of 70 mm and a length of 500 mm to prepare a test piece, a test piece having a diameter of 1 mm and a radius of curvature of the tip of 0.5 mm was used, and the test speed was 500 mm / min. The measurement was performed in accordance with the method described in JIS Z1707 7.4. “A release film having a piercing strength of 5.7 N or more and 20 N or less” is evaluated as A, “A release film having a piercing strength of 5.5 N or more and 5.7 N or less” is evaluated as B, and “A piercing strength is A release film of less than 5.5N was evaluated as C. In addition, as shown in Table 1, the release film which concerns on a present Example was A and B evaluation.

(Comparative Example 1)
A single-layer release film of TPX resin was produced using an extrusion method. The single-layer release film had a thickness of 50 μm. Then, this single-layer release film was evaluated in the same manner as in Example 1.

  As shown in Table 1, as a result of the evaluation, the appearance of the molded product was A evaluation. Moreover, the perforation evaluation of the single layer type release film according to this comparative example was C judgment, and the piercing strength of the single layer type release film was C judgment.

(Comparative Examples 2-6)
Using the extrusion method, single layer type films of the cushion layer resin used in Examples 1 to 5 were produced. The single-layer release film had a thickness of 50 μm. Then, this single-layer release film was evaluated in the same manner as in Example 1.

  As shown in Table 1, as a result of the evaluation, the appearance of the molded product was C evaluation. Moreover, the perforation evaluation of the single layer type release film according to this comparative example was A judgment, and the piercing strength of the single layer type release film was A judgment.

  The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the above-described embodiments, and various modifications may be made within the scope of the gist of the present invention described in the claims. It can be changed.

DESCRIPTION OF SYMBOLS 100 Semiconductor device 101 Molded body 110 Support body 120 Semiconductor element 130 Bonding wire 200 Release film 200A Release film 210 Release layer 210a First release layer 210b Second release layer 220 Cushion layer 300 Mold 310 Recess 311 Release recess 320 Air hole 330 Planar part 340 Stepped planar part 400 Sealing resin or the like (sealing resin or sealing resin precursor)
401 Sealing resin layer 510 Dice 520 Touch roll 530 First roll 540 Second roll

Claims (2)

In a sealing resin molding process of a resin-encapsulated semiconductor device for resin-encapsulating a semiconductor device, a release film disposed between a mold and the semiconductor device,
A cushion layer comprising poly (4-methyl-1-pentene), a polyamide resin, an olefin polymer and / or an olefin copolymer,
Provided on at least one surface of the cushion layer;
And a release layer comprising poly (4-methyl-1-pentene)
A release film for producing a resin-encapsulated semiconductor device, wherein 90% by weight or more of poly (4-methyl-1-pentene) is contained with respect to the weight of the entire release layer forming material . The release film for manufacturing a resin-encapsulated semiconductor device according to claim 1, wherein the release film has a puncture strength of 5.5 N or more.

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