JP6392346B2 - 下部透明導体層の部分を通る電流漏れを低減するように改良された構造を有するエレクトロクロミックデバイス - Google Patents
下部透明導体層の部分を通る電流漏れを低減するように改良された構造を有するエレクトロクロミックデバイス Download PDFInfo
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- JP6392346B2 JP6392346B2 JP2016530048A JP2016530048A JP6392346B2 JP 6392346 B2 JP6392346 B2 JP 6392346B2 JP 2016530048 A JP2016530048 A JP 2016530048A JP 2016530048 A JP2016530048 A JP 2016530048A JP 6392346 B2 JP6392346 B2 JP 6392346B2
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- layer
- conductive layer
- transparent conductive
- lower transparent
- electrode layer
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Classifications
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F2203/00—Function characteristic
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
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Description
本願は、2013年7月25日に提出された米国特許出願第13/950,791号の継続であり、その開示内容は、参照により本明細書に組み込まれる。
Claims (12)
- エレクトロクロミックデバイスであって:
下部透明導電層において、前記下部透明導電層の第1部分が第1導電素子に連結されており、前記下部透明導電層の前記第1部分から物理的に分離されている前記下部透明導電層の第2部分が第2導電素子に連結されている前記下部透明導電層と;
上部透明導電層において、前記上部透明導電層の第1部分が前記第1導電素子に連結されており、前記上部透明導電層の前記第1部分から物理的に分離されている前記上部透明導電層の第2部分が前記第2導電素子に連結されている前記上部透明導電層と;
前記下部透明導電層と前記上部透明導電層との間にあり、前記下部透明導電層の前記第1部分および前記第2部分のそれぞれと接触している、対電極層およびエレクトロクロミック層のうちの一方を含む第1電極層と;
前記下部透明導電層と前記上部透明導電層との間にある、前記対電極層および前記エレクトロクロミック層のうちの他方を含む第2電極層と;
前記第1電極層と前記第2電極層との間にあり、かつこれらと連通している、イオンを伝導するためのイオン伝導体層において、イオン伝導体が、前記第1導電素子から前記第2導電素子まで連続して延在している、前記イオン伝導体層と
を含み、
前記下部透明導電層の前記第1部分および前記第2部分が、前記第1電極層を占めている電荷補償イオンの移動長さを超えて離間しており、
前記下部透明導電層の前記第1部分と前記第2部分との間のスペースが、前記下部透明導電層の前記第1部分および前記第2部分のそれぞれから電気的に単離されている前記下部透明導電層の第3部分によって少なくとも部分的に充填されている、エレクトロクロミックデバイス。 - 前記下部透明導電層の前記第1部分および前記第2部分が、約50ミクロンを超えて離間している、請求項1に記載のデバイス。
- 前記下部透明導電層の前記第1部分および前記第2部分が、約75ミクロンを超えて離間している、請求項1に記載のデバイス。
- 前記下部透明導電層の前記第1部分と前記第2部分との間のスペースが、前記第1電極層によって少なくとも部分的に充填されている、請求項1に記載のデバイス。
- 前記下部透明導電層の前記第1部分および前記第3部分が、約25ミクロンを超えて離間しており、前記下部透明導電層の前記第2部分および前記第3部分が、約25ミクロンを超えて離間している、請求項1に記載のデバイス。
- 前記下部透明導電層の前記第1部分と前記第3部分との間および前記第2部分と前記第3部分との間のそれぞれのスペースが、それぞれ、前記第1電極層によって少なくとも部分的に充填されている、請求項1に記載のデバイス。
- エレクトロクロミックデバイスであって:
下部透明導電層において、前記下部透明導電層の第1部分が第1導電素子に連結されており、前記下部透明導電層の前記第1部分から物理的に分離されている前記下部透明導電層の第2部分が第2導電素子に連結されている前記下部透明導電層と;
上部透明導電層において、前記上部透明導電層の第1部分が前記第1導電素子に連結されており、前記上部透明導電層の前記第1部分から物理的に分離されている前記上部透明導電層の第2部分が前記第2導電素子に連結されている前記上部透明導電層と;
前記下部透明導電層と前記上部透明導電層との間にあり、前記下部透明導電層の前記第1部分および前記第2部分のそれぞれと接触している、対電極層およびエレクトロクロミック層のうちの一方を含む第1電極層と;
前記下部透明導電層と前記上部透明導電層との間にある、前記対電極層および前記エレクトロクロミック層のうちの他方を含む第2電極層と;
前記第1電極層と前記第2電極層との間にあり、かつこれらと連通している、イオンを伝導するためのイオン伝導体層において、イオン伝導体が、前記第1導電素子から前記第2導電素子まで連続して延在している、前記イオン伝導体層と
を含み、
前記下部透明導電層の前記第1部分および前記第2部分が、前記第1電極層を占めている電荷補償イオンの移動長さを超えて離間しており、
前記第1電極層が、前記第1導電素子と前記下部透明導電層の前記第1部分とに連結された第1部分と、前記第2導電素子と前記下部透明導電層の前記第2部分とに連結された、前記第1電極層の前記第1部分から物理的に分離されている第2部分とを含み、
前記下部透明導電層の前記第1部分および前記第2部分が、前記第1電極層の前記第1部分および前記第2部分が離間しているよりも離間している、エレクトロクロミックデバイス。 - 前記下部透明導電層の前記第1部分および前記第2部分が、約50ミクロンを超えて離間している、請求項7に記載のデバイス。
- 前記下部透明導電層の前記第1部分と前記第2部分との間のスペースが、前記イオン伝導体層によって少なくとも部分的に充填されている、請求項7に記載のデバイス。
- 前記第1電極層の前記第1部分と前記第2部分との間のスペースが、前記イオン伝導体層によって少なくとも部分的に充填されている、請求項9に記載のデバイス。
- 前記対電極層が、タングステンニッケル混合酸化物を含む、請求項1に記載のデバイス。
- エレクトロクロミックデバイスの作製のための方法であって:
第1導電層を堆積することと;
前記第1導電層の第1部分、前記第1導電層の第2部分および前記第1導電層の第3部分がそれぞれ電気的に単離されるように前記第1導電層を切断することによって、前記第1導電層の前記第1部分および前記第2部分がスペースによって分離され、前記第1導電層の前記第1部分と前記第2部分との間の前記スペースが、前記第1導電層の前記第3部分によって少なくとも部分的に充填されていることと;
エレクトロクロミック電極層および対電極層のうちの一方を、前記第1導電層に、かつ前記第1導電層の前記第1部分と前記第2部分との間の前記スペース内に堆積することにより、前記第1導電層の前記第1部分と前記第2部分との間のスペースよりも短い移動長さを有する電荷補償イオンによって占められている第1堆積電極を付与することと;
前記第1堆積電極にイオン伝導体層を堆積させ、その結果、前記イオン伝導体層が前記第1堆積電極と連通するようにすることと;
前記エレクトロクロミック電極層および前記対電極層のうちの他方を前記イオン伝導体層に堆積させることにより、第2堆積電極を付与することと;
第2導電層を前記第2堆積電極に堆積させることと
を含む方法。
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US13/950,791 | 2013-07-25 | ||
US13/950,791 US9152001B2 (en) | 2013-07-25 | 2013-07-25 | Electrochromic devices having improved structure for reducing current leakage across lower transparent conductor layers |
PCT/US2014/047955 WO2015013487A1 (en) | 2013-07-25 | 2014-07-24 | Electrochromic devices having improved structure for reducing current leakage across portions of the lower transparent conductor layer |
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JP2016525719A JP2016525719A (ja) | 2016-08-25 |
JP2016525719A5 JP2016525719A5 (ja) | 2017-08-17 |
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EP (1) | EP3025192B1 (ja) |
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CN107045243B (zh) * | 2016-02-06 | 2020-11-13 | 合肥威迪变色玻璃有限公司 | 电致变色结构及其形成方法 |
CN105607375B (zh) * | 2016-02-29 | 2018-12-25 | 中国建筑材料科学研究总院 | 高通量筛选固态无机电致变色材料的电致变色器件及其制备方法 |
WO2018157057A1 (en) * | 2017-02-27 | 2018-08-30 | Sage Electrochromics, Inc. | Electrical device including a substrate and a transparent conductive layer and a process of forming the same |
CN110869845A (zh) * | 2017-04-12 | 2020-03-06 | 法国圣戈班玻璃厂 | 电致变色结构及分离电致变色结构的方法 |
TWI634221B (zh) * | 2017-09-01 | 2018-09-01 | 行政院原子能委員會核能硏究所 | 電化學元件之製造方法 |
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RU2117971C1 (ru) | 1992-04-10 | 1998-08-20 | Сан Эктив Гласс Электрокромикс, Инк. | Электрохромное устройство (варианты) и способ его изготовления (варианты) |
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US5370775A (en) | 1992-04-10 | 1994-12-06 | Sun Active Glass Electrochromics, Inc. | Formation of chemically reduced electrode layers |
US5532869A (en) * | 1994-04-29 | 1996-07-02 | Tufts University | Transparent, electrically-conductive, ion-blocking layer for electrochromic windows |
US5724175A (en) | 1997-01-02 | 1998-03-03 | Optical Coating Laboratory, Inc. | Electrochromic device manufacturing process |
JPH11194372A (ja) * | 1997-12-26 | 1999-07-21 | Murakami Corp | アスフェリカルecミラー |
ES2164029B1 (es) * | 2000-07-07 | 2003-05-16 | Fico Mirrors Sa | Dispositivo electrocromico y aplicaciones correspondientes. |
FR2833107B1 (fr) | 2001-12-05 | 2004-02-20 | Saint Gobain | Electrode de dispositifs electrochimiques/electrocommandables |
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KR20060053111A (ko) * | 2004-11-11 | 2006-05-19 | 주식회사 엘지화학 | 정보표시가 가능한 전기변색 거울 또는 창 |
US7372610B2 (en) | 2005-02-23 | 2008-05-13 | Sage Electrochromics, Inc. | Electrochromic devices and methods |
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RU2637382C2 (ru) | 2011-12-12 | 2017-12-04 | Вью, Инк. | Тонкопленочные устройства и их изготовление |
US9013778B2 (en) * | 2013-03-06 | 2015-04-21 | Sage Electrochromics, Inc. | Laser cuts to reduce electrical leakage |
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US9152001B2 (en) | 2015-10-06 |
US20150029573A1 (en) | 2015-01-29 |
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