JP6380932B2 - ナノオーダ構造体の製造方法および製造装置 - Google Patents

ナノオーダ構造体の製造方法および製造装置 Download PDF

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JP6380932B2
JP6380932B2 JP2014214096A JP2014214096A JP6380932B2 JP 6380932 B2 JP6380932 B2 JP 6380932B2 JP 2014214096 A JP2014214096 A JP 2014214096A JP 2014214096 A JP2014214096 A JP 2014214096A JP 6380932 B2 JP6380932 B2 JP 6380932B2
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nano
order structure
substrate
manufacturing
order
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Japanese (ja)
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JP2016079486A5 (enExample
JP2016079486A (ja
Inventor
谷江　尚史
尚史 谷江
貴志 澄川
貴志 澄川
隆行 北村
隆行 北村
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Hitachi Ltd
Kyoto University NUC
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Hitachi Ltd
Kyoto University NUC
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Priority to JP2014214096A priority Critical patent/JP6380932B2/ja
Priority to EP15002952.8A priority patent/EP3012344A1/en
Priority to US14/887,788 priority patent/US20160108514A1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
JP2014214096A 2014-10-21 2014-10-21 ナノオーダ構造体の製造方法および製造装置 Expired - Fee Related JP6380932B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014214096A JP6380932B2 (ja) 2014-10-21 2014-10-21 ナノオーダ構造体の製造方法および製造装置
EP15002952.8A EP3012344A1 (en) 2014-10-21 2015-10-16 Method and apparatus for producing nanostructures, and substrate structure including nanostructures
US14/887,788 US20160108514A1 (en) 2014-10-21 2015-10-20 Method and apparatus for producing nanostructures, and substrate structure including nanostructures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014214096A JP6380932B2 (ja) 2014-10-21 2014-10-21 ナノオーダ構造体の製造方法および製造装置

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JP2016079486A JP2016079486A (ja) 2016-05-16
JP2016079486A5 JP2016079486A5 (enExample) 2017-03-23
JP6380932B2 true JP6380932B2 (ja) 2018-08-29

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US (1) US20160108514A1 (enExample)
EP (1) EP3012344A1 (enExample)
JP (1) JP6380932B2 (enExample)

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DE102020107515A1 (de) * 2020-03-18 2021-09-23 Nanowired Gmbh Multimetall Klettwelding
DE102020118446A1 (de) * 2020-07-13 2022-01-13 Nanowired Gmbh Verbindungselement
CN116445887A (zh) * 2023-06-20 2023-07-18 中国科学院理化技术研究所 一种利用螺旋外延生长制备金属性二维过渡金属硫族化合物的方法

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JP3259844B2 (ja) * 1990-03-27 2002-02-25 株式会社豊田中央研究所 異方性ナノ複合材料およびその製造方法
US7658991B2 (en) * 2004-10-21 2010-02-09 University Of Georgia Research Foundation, Inc. Structures having aligned nanorods and methods of making
JP4923477B2 (ja) * 2004-11-24 2012-04-25 株式会社豊田中央研究所 量子ドットアレイ及びその製造方法、並びに量子ドットアレイ素子及びその製造方法
JP4938365B2 (ja) 2006-06-26 2012-05-23 パナソニック株式会社 カーボン金型、およびその製造方法
US8282993B2 (en) * 2007-04-02 2012-10-09 Rensselaer Polytechnic Institute Ultrathin magnesium nanoblades
TWI372418B (en) * 2008-08-14 2012-09-11 Univ Nat Chiao Tung Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same
US8405996B2 (en) 2009-06-30 2013-03-26 General Electric Company Article including thermal interface element and method of preparation
JP2011150154A (ja) * 2010-01-22 2011-08-04 Showa Shinku:Kk 薄膜、及び、薄膜の形成方法
JP5870113B2 (ja) * 2011-10-31 2016-02-24 株式会社日立製作所 半導体装置
TWI490474B (zh) * 2012-01-12 2015-07-01 Phansco Corp 表面增強拉曼光譜（ｓｅｒｓ）感測基板及其製造方法
US20140142252A1 (en) 2012-11-19 2014-05-22 Sangho Cho Self-assembled structures, method of manufacture thereof and articles comprising the same
CN104903998A (zh) * 2013-01-09 2015-09-09 株式会社日立制作所 半导体装置及其制造方法

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JP2016079486A (ja) 2016-05-16
EP3012344A1 (en) 2016-04-27

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