JP6380698B1 - ゲート駆動回路 - Google Patents
ゲート駆動回路 Download PDFInfo
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- JP6380698B1 JP6380698B1 JP2018039049A JP2018039049A JP6380698B1 JP 6380698 B1 JP6380698 B1 JP 6380698B1 JP 2018039049 A JP2018039049 A JP 2018039049A JP 2018039049 A JP2018039049 A JP 2018039049A JP 6380698 B1 JP6380698 B1 JP 6380698B1
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- signal
- gate drive
- gate
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- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 230000000295 complement effect Effects 0.000 claims abstract description 4
- 230000007257 malfunction Effects 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract description 4
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 13
- 230000007935 neutral effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
Description
図1は、実施の形態のゲート駆動回路100を示す図である。ゲート駆動回路100は、端子101、102、電源110P、110N、信号生成部120、フォトカプラ130、抵抗器140、抵抗器150、及び出力段素子160を含む。
100 ゲート駆動回路
101、102 端子
110P、110N 電源
120 信号生成部
130 フォトカプラ
131 発光ダイオード
132 フォトトランジスタ
140 抵抗器
150 抵抗器
160A、160B 半導体スイッチ
Claims (6)
- ハイレベル及びローレベルになる駆動信号を出力端から出力する出力部と、
前記駆動信号で駆動される相補型の第1半導体スイッチ及び第2半導体スイッチを含み、前記第1半導体スイッチ及び前記第2半導体スイッチとの接続点から前記駆動信号に基づくゲート駆動信号を出力する出力段素子と、
前記出力端と、前記出力段素子の前記駆動信号が入力される出力段素子入力部とを抵抗器を介して接続する第1線路と、
前記出力端と前記接続点とを接続する第2線路と、
を有する、ゲート駆動回路。 - 前記第2線路は、前記出力端と前記接続点とを第2抵抗器を介して接続する、請求項1記載のゲート駆動回路。
- 前記第2線路の抵抗をR、前記第2線路と、前記接続点から前記接続点に接続される半導体スイッチのゲート端子までの線路とのインダクタンスをL、前記半導体スイッチの入力容量をCとすると、
前記抵抗RがR≧1.4×(L/C) 1/2 を満たす、請求項1又は2記載のゲート駆動回路。 - 前記第2線路と、前記接続点から前記接続点に接続される半導体スイッチのゲート端子までの線路とのインダクタンスをL、前記第2抵抗器の抵抗をR、前記半導体スイッチの入力容量をCとすると、
前記抵抗RがR≧1.4×(L/C) 1/2 を満たす、請求項2記載のゲート駆動回路。 - 前記第2線路と、前記接続点から前記接続点に接続される半導体スイッチのゲート端子までの線路とのインダクタンスをL、前記第2抵抗器と前記第2線路の合成抵抗をR、前記半導体スイッチの入力容量をCとすると、
前記合成抵抗RがR≧1.4×(L/C) 1/2 を満たす、請求項2記載のゲート駆動回路。 - 前記出力部は、第1電源から入力される電圧に基づいてハイレベルの前記駆動信号を前記出力端から出力し、前記第1電源とは異なる第2電源から入力される電圧に基づいてローレベルの前記駆動信号を前記出力端から出力し、
前記駆動信号がハイレベルの期間には、前記第1電源から前記第1半導体スイッチを介して供給される電圧と、前記第1電源から前記第2線路を介して供給される電圧とが前記接続点に供給され、
前記駆動信号がローレベルの期間には、前記第2電源から前記第2半導体スイッチを介して供給される電圧と、前記第2電源から前記第2線路を介して供給される電圧とが前記接続点に供給される、請求項1から5のいずれか一項に記載のゲート駆動回路。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018039049A JP6380698B1 (ja) | 2018-03-05 | 2018-03-05 | ゲート駆動回路 |
US16/254,891 US10763848B2 (en) | 2018-03-05 | 2019-01-23 | Gate drive circuit |
CN201910083113.5A CN110233568B (zh) | 2018-03-05 | 2019-01-28 | 栅极驱动电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018039049A JP6380698B1 (ja) | 2018-03-05 | 2018-03-05 | ゲート駆動回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6380698B1 true JP6380698B1 (ja) | 2018-08-29 |
JP2019153982A JP2019153982A (ja) | 2019-09-12 |
Family
ID=63354726
Family Applications (1)
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---|---|---|---|
JP2018039049A Active JP6380698B1 (ja) | 2018-03-05 | 2018-03-05 | ゲート駆動回路 |
Country Status (3)
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US (1) | US10763848B2 (ja) |
JP (1) | JP6380698B1 (ja) |
CN (1) | CN110233568B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11362646B1 (en) | 2020-12-04 | 2022-06-14 | Skyworks Solutions, Inc. | Variable current drive for isolated gate drivers |
US11641197B2 (en) | 2021-04-28 | 2023-05-02 | Skyworks Solutions, Inc. | Gate driver output protection circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014124055A (ja) * | 2012-12-21 | 2014-07-03 | Toshiba Corp | ゲート駆動回路 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5675276A (en) * | 1995-09-27 | 1997-10-07 | Analog Devices, Inc. | Gate driver circuit and hysteresis circuit therefor |
US7148738B2 (en) * | 2004-02-17 | 2006-12-12 | Siemens Energy & Automation, Inc. | Systems, devices, and methods for providing control signals |
US8519751B2 (en) * | 2009-09-15 | 2013-08-27 | Mitsubishi Electric Corporation | Gate drive circuit |
CN103326547A (zh) * | 2013-06-18 | 2013-09-25 | 欧瑞传动电气股份有限公司 | 一种带保护延时的igbt驱动电路 |
-
2018
- 2018-03-05 JP JP2018039049A patent/JP6380698B1/ja active Active
-
2019
- 2019-01-23 US US16/254,891 patent/US10763848B2/en active Active
- 2019-01-28 CN CN201910083113.5A patent/CN110233568B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014124055A (ja) * | 2012-12-21 | 2014-07-03 | Toshiba Corp | ゲート駆動回路 |
Also Published As
Publication number | Publication date |
---|---|
US20190273489A1 (en) | 2019-09-05 |
JP2019153982A (ja) | 2019-09-12 |
CN110233568B (zh) | 2023-09-26 |
US10763848B2 (en) | 2020-09-01 |
CN110233568A (zh) | 2019-09-13 |
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