JP6377060B2 - 広ダイナミックレンジイオンエネルギーバイアス制御、高速イオンエネルギー切り替え、イオンエネルギー制御およびパルスバイアス供給部、および仮想フロントパネル - Google Patents

広ダイナミックレンジイオンエネルギーバイアス制御、高速イオンエネルギー切り替え、イオンエネルギー制御およびパルスバイアス供給部、および仮想フロントパネル Download PDF

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JP6377060B2
JP6377060B2 JP2015529939A JP2015529939A JP6377060B2 JP 6377060 B2 JP6377060 B2 JP 6377060B2 JP 2015529939 A JP2015529939 A JP 2015529939A JP 2015529939 A JP2015529939 A JP 2015529939A JP 6377060 B2 JP6377060 B2 JP 6377060B2
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voltage
ion energy
ion
function
ion current
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JP2016500132A (ja
Inventor
ビクター ブルーク，
ビクター ブルーク，
ダニエル ジェイ． ホフマン，
ダニエル ジェイ． ホフマン，
ダニエル カーター，
ダニエル カーター，
ドミトリー コワレフスキー，
ドミトリー コワレフスキー，
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Advanced Energy Industries Inc
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Advanced Energy Industries Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H01J37/241—High voltage power supply or regulation circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2015529939A 2012-08-28 2013-08-27 広ダイナミックレンジイオンエネルギーバイアス制御、高速イオンエネルギー切り替え、イオンエネルギー制御およびパルスバイアス供給部、および仮想フロントパネル Active JP6377060B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261694148P 2012-08-28 2012-08-28
US61/694,148 2012-08-28
PCT/US2013/056851 WO2014036000A1 (en) 2012-08-28 2013-08-27 Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018138425A Division JP6776303B2 (ja) 2012-08-28 2018-07-24 プラズマ処理のためのシステム、方法、および非一過性プロセッサ読み取り可能な媒体

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JP2016500132A JP2016500132A (ja) 2016-01-07
JP6377060B2 true JP6377060B2 (ja) 2018-08-22

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JP2018138425A Active JP6776303B2 (ja) 2012-08-28 2018-07-24 プラズマ処理のためのシステム、方法、および非一過性プロセッサ読み取り可能な媒体

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Country Status (5)

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US (4) US9105447B2 (enExample)
JP (2) JP6377060B2 (enExample)
KR (3) KR102025540B1 (enExample)
TW (1) TWI564928B (enExample)
WO (1) WO2014036000A1 (enExample)

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