JP6374481B2 - 極端紫外線光源のビーム位置制御を行うシステム又は方法 - Google Patents
極端紫外線光源のビーム位置制御を行うシステム又は方法 Download PDFInfo
- Publication number
- JP6374481B2 JP6374481B2 JP2016500393A JP2016500393A JP6374481B2 JP 6374481 B2 JP6374481 B2 JP 6374481B2 JP 2016500393 A JP2016500393 A JP 2016500393A JP 2016500393 A JP2016500393 A JP 2016500393A JP 6374481 B2 JP6374481 B2 JP 6374481B2
- Authority
- JP
- Japan
- Prior art keywords
- light beam
- amplified light
- sensor
- target material
- location
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
- H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
- H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361787228P | 2013-03-15 | 2013-03-15 | |
| US61/787,228 | 2013-03-15 | ||
| US14/035,847 | 2013-09-24 | ||
| US14/035,847 US8872144B1 (en) | 2013-09-24 | 2013-09-24 | System and method for laser beam focus control for extreme ultraviolet laser produced plasma source |
| US14/184,777 | 2014-02-20 | ||
| US14/184,777 US9000405B2 (en) | 2013-03-15 | 2014-02-20 | Beam position control for an extreme ultraviolet light source |
| PCT/US2014/018419 WO2014149435A1 (en) | 2013-03-15 | 2014-02-25 | Beam position control for an extreme ultraviolet light source |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016512383A JP2016512383A (ja) | 2016-04-25 |
| JP2016512383A5 JP2016512383A5 (enExample) | 2017-03-09 |
| JP6374481B2 true JP6374481B2 (ja) | 2018-08-15 |
Family
ID=51580614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016500393A Active JP6374481B2 (ja) | 2013-03-15 | 2014-02-25 | 極端紫外線光源のビーム位置制御を行うシステム又は方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6374481B2 (enExample) |
| KR (1) | KR102214861B1 (enExample) |
| TW (1) | TWI612851B (enExample) |
| WO (1) | WO2014149435A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI739755B (zh) * | 2015-08-12 | 2021-09-21 | 荷蘭商Asml荷蘭公司 | 極紫外線光源中之目標擴張率控制 |
| US9820368B2 (en) | 2015-08-12 | 2017-11-14 | Asml Netherlands B.V. | Target expansion rate control in an extreme ultraviolet light source |
| US10663866B2 (en) * | 2016-09-20 | 2020-05-26 | Asml Netherlands B.V. | Wavelength-based optical filtering |
| US10935720B2 (en) * | 2019-04-29 | 2021-03-02 | Ii-Vi Delaware, Inc. | Laser beam product parameter adjustments |
| JP2023506415A (ja) * | 2019-12-20 | 2023-02-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 極端紫外線光源の較正システム |
| WO2021239357A1 (en) * | 2020-05-28 | 2021-12-02 | Asml Netherlands B.V. | Alignment of extreme ultraviolet light source |
| TWI867150B (zh) | 2020-06-09 | 2024-12-21 | 南韓商三星電子股份有限公司 | 半導體製造裝置以及其操作方法 |
| JP7673097B2 (ja) * | 2020-07-30 | 2025-05-08 | エーエスエムエル ネザーランズ ビー.ブイ. | Euv光源のターゲット計測 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3256984B2 (ja) * | 1991-06-13 | 2002-02-18 | ソニー・プレシジョン・テクノロジー株式会社 | 変位検出装置 |
| US7598509B2 (en) * | 2004-11-01 | 2009-10-06 | Cymer, Inc. | Laser produced plasma EUV light source |
| US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
| JP5368261B2 (ja) * | 2008-11-06 | 2013-12-18 | ギガフォトン株式会社 | 極端紫外光源装置、極端紫外光源装置の制御方法 |
| US8283643B2 (en) * | 2008-11-24 | 2012-10-09 | Cymer, Inc. | Systems and methods for drive laser beam delivery in an EUV light source |
| US8000212B2 (en) * | 2009-12-15 | 2011-08-16 | Cymer, Inc. | Metrology for extreme ultraviolet light source |
| US8173985B2 (en) * | 2009-12-15 | 2012-05-08 | Cymer, Inc. | Beam transport system for extreme ultraviolet light source |
| US8648999B2 (en) * | 2010-07-22 | 2014-02-11 | Cymer, Llc | Alignment of light source focus |
| JP5946612B2 (ja) * | 2010-10-08 | 2016-07-06 | ギガフォトン株式会社 | ミラー、ミラー装置、レーザ装置および極端紫外光生成装置 |
-
2014
- 2014-02-25 JP JP2016500393A patent/JP6374481B2/ja active Active
- 2014-02-25 WO PCT/US2014/018419 patent/WO2014149435A1/en not_active Ceased
- 2014-02-25 KR KR1020157028292A patent/KR102214861B1/ko active Active
- 2014-03-14 TW TW103109580A patent/TWI612851B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201444418A (zh) | 2014-11-16 |
| KR102214861B1 (ko) | 2021-02-10 |
| KR20150130440A (ko) | 2015-11-23 |
| TWI612851B (zh) | 2018-01-21 |
| JP2016512383A (ja) | 2016-04-25 |
| WO2014149435A1 (en) | 2014-09-25 |
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