JP6374118B2 - デュアルモード電力増幅器 - Google Patents

デュアルモード電力増幅器 Download PDF

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Publication number
JP6374118B2
JP6374118B2 JP2017539401A JP2017539401A JP6374118B2 JP 6374118 B2 JP6374118 B2 JP 6374118B2 JP 2017539401 A JP2017539401 A JP 2017539401A JP 2017539401 A JP2017539401 A JP 2017539401A JP 6374118 B2 JP6374118 B2 JP 6374118B2
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JP
Japan
Prior art keywords
amplifier
mode
signal
nmos transistor
operating
Prior art date
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Expired - Fee Related
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JP2017539401A
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English (en)
Japanese (ja)
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JP2018507614A5 (OSRAM
JP2018507614A (ja
Inventor
リン、サイファ
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Qualcomm Inc
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Qualcomm Inc
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Publication of JP2018507614A5 publication Critical patent/JP2018507614A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/401—Circuits for selecting or indicating operating mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W52/00—Power management, e.g. Transmission Power Control [TPC] or power classes
    • H04W52/02—Power saving arrangements
    • H04W52/0209—Power saving arrangements in terminal devices
    • H04W52/0251—Power saving arrangements in terminal devices using monitoring of local events, e.g. events related to user activity
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W52/00—Power management, e.g. Transmission Power Control [TPC] or power classes
    • H04W52/04—Transmission power control [TPC]
    • H04W52/52—Transmission power control [TPC] using AGC [Automatic Gain Control] circuits or amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/09—A balun, i.e. balanced to or from unbalanced converter, being present at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/507—A switch being used for switching on or off a supply or supplying circuit in an IC-block amplifier circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45554—Indexing scheme relating to differential amplifiers the IC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45731—Indexing scheme relating to differential amplifiers the LC comprising a transformer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7239—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
    • H04W88/02—Terminal devices
    • H04W88/06—Terminal devices adapted for operation in multiple networks or having at least two operational modes, e.g. multi-mode terminals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/30—Systems integrating technologies related to power network operation and communication or information technologies for improving the carbon footprint of the management of residential or tertiary loads, i.e. smart grids as climate change mitigation technology in the buildings sector, including also the last stages of power distribution and the control, monitoring or operating management systems at local level
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
JP2017539401A 2015-01-28 2015-12-16 デュアルモード電力増幅器 Expired - Fee Related JP6374118B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/608,121 2015-01-28
US14/608,121 US9871488B2 (en) 2015-01-28 2015-01-28 Dual-mode power amplifier
PCT/US2015/066207 WO2016122794A1 (en) 2015-01-28 2015-12-16 Dual-mode power amplifier

Publications (3)

Publication Number Publication Date
JP2018507614A JP2018507614A (ja) 2018-03-15
JP2018507614A5 JP2018507614A5 (OSRAM) 2018-04-26
JP6374118B2 true JP6374118B2 (ja) 2018-08-15

Family

ID=55066866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017539401A Expired - Fee Related JP6374118B2 (ja) 2015-01-28 2015-12-16 デュアルモード電力増幅器

Country Status (5)

Country Link
US (1) US9871488B2 (OSRAM)
EP (1) EP3251209A1 (OSRAM)
JP (1) JP6374118B2 (OSRAM)
CN (1) CN107210717B (OSRAM)
WO (1) WO2016122794A1 (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10064140B2 (en) 2016-10-19 2018-08-28 Realtek Semiconductor Corp. Radio-frequency module and wireless device
WO2020145420A1 (ko) * 2019-01-08 2020-07-16 엘지전자 주식회사 수신 증폭부를 구비하는 전자 기기
CN112583456B (zh) * 2019-09-30 2022-03-29 上海华为技术有限公司 一种通信装置
US11533027B2 (en) * 2019-10-18 2022-12-20 Analog Devices, Inc. Low power receiver circuit for isolated data communications
KR102902958B1 (ko) * 2020-08-24 2025-12-22 삼성전자주식회사 송신 장치 및 그것을 포함하는 전자 장치
EP4304099A1 (en) * 2022-07-05 2024-01-10 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Rf transceiver
CN114978068B (zh) * 2022-07-27 2022-11-08 电子科技大学 一种超宽带双模式高效率功率放大器单片微波集成电路

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US5060294A (en) 1990-07-05 1991-10-22 Motorola, Inc. Dual mode power amplifier for radiotelephone
US5530403A (en) * 1995-05-03 1996-06-25 Motorola, Inc. Low-voltage differential amplifier
US6069525A (en) 1997-04-17 2000-05-30 Qualcomm Incorporated Dual-mode amplifier with high efficiency and high linearity
US6765802B1 (en) * 2000-10-27 2004-07-20 Ridley Engineering, Inc. Audio sound quality enhancement apparatus
US6806767B2 (en) * 2002-07-09 2004-10-19 Anadigics, Inc. Power amplifier with load switching circuit
JP2008510336A (ja) * 2004-08-12 2008-04-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ デュアルモード音声増幅器
US8340598B2 (en) 2007-05-17 2012-12-25 Qualcomm Atheros, Inc. Dual mode power amplifier
JP2010147574A (ja) * 2008-12-16 2010-07-01 Renesas Technology Corp 電力増幅器
EP2489048B1 (en) 2009-10-12 2014-12-31 ST-Ericsson (France) SAS Integrated transformer with multiple transformation ratios
US20110171994A1 (en) * 2010-01-08 2011-07-14 Texas Instruments Incorporated Multi-mode transceiver and a circuit for operating the multi-mode transceiver
WO2011090048A1 (ja) * 2010-01-19 2011-07-28 株式会社村田製作所 周波数安定化回路、周波数安定化デバイス、アンテナ装置及び通信端末機器並びにインピーダンス変換素子
US7944296B1 (en) * 2010-03-12 2011-05-17 Samsung Electro-Mechanics Company Low power mode amplification with a transformer output matching and a virtual ground
US8626084B2 (en) * 2010-05-13 2014-01-07 Qualcomm, Incorporated Area efficient concurrent matching transceiver
JP5269021B2 (ja) * 2010-09-22 2013-08-21 株式会社東芝 増幅器、送信器
JP5620804B2 (ja) * 2010-12-16 2014-11-05 ルネサスエレクトロニクス株式会社 高周波電力増幅装置
US9306502B2 (en) * 2011-05-09 2016-04-05 Qualcomm Incorporated System providing switchable impedance transformer matching for power amplifiers
US8892159B2 (en) * 2011-05-12 2014-11-18 St-Ericsson Sa Multi-standard transceiver architecture with common balun and mixer
KR101350731B1 (ko) * 2012-02-24 2014-01-13 한국과학기술원 이중 스위칭증폭기를 이용한 효율 향상된 포락선 증폭기 및 그 설계방법
US8823449B2 (en) * 2012-04-05 2014-09-02 St-Ericsson Sa Extremely high frequency dual-mode class AB power amplifier
US9312820B2 (en) 2012-09-23 2016-04-12 Dsp Group Ltd. CMOS based TX/RX switch
US8988148B2 (en) 2012-12-17 2015-03-24 Julian Jenkins Transconductance amplifier
JP5974921B2 (ja) * 2013-02-13 2016-08-23 株式会社ソシオネクスト 増幅器及び無線通信装置
JP2014225852A (ja) * 2013-04-23 2014-12-04 旭化成エレクトロニクス株式会社 アクティブバラン回路

Also Published As

Publication number Publication date
US20160218674A1 (en) 2016-07-28
CN107210717B (zh) 2018-12-04
US9871488B2 (en) 2018-01-16
CN107210717A (zh) 2017-09-26
EP3251209A1 (en) 2017-12-06
WO2016122794A1 (en) 2016-08-04
JP2018507614A (ja) 2018-03-15

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