JP6346209B2 - 一時接合 - Google Patents

一時接合 Download PDF

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Publication number
JP6346209B2
JP6346209B2 JP2016029418A JP2016029418A JP6346209B2 JP 6346209 B2 JP6346209 B2 JP 6346209B2 JP 2016029418 A JP2016029418 A JP 2016029418A JP 2016029418 A JP2016029418 A JP 2016029418A JP 6346209 B2 JP6346209 B2 JP 6346209B2
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JP
Japan
Prior art keywords
temporary bonding
copper
semiconductor substrate
front side
release additive
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JP2016029418A
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English (en)
Japanese (ja)
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JP2016174145A5 (enExample
JP2016174145A (ja
Inventor
マーク・エス・オリヴァー
ジィフェン・バイ
マイケル・ケイ・ギャルハー
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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Publication of JP2016174145A publication Critical patent/JP2016174145A/ja
Publication of JP2016174145A5 publication Critical patent/JP2016174145A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2400/00—Presence of inorganic and organic materials
    • C09J2400/10—Presence of inorganic materials
    • C09J2400/16—Metal
    • C09J2400/163—Metal in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7438—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07355—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/255—Materials of outermost layers of multilayered bumps, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2016029418A 2015-03-03 2016-02-19 一時接合 Active JP6346209B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/636,981 US9644118B2 (en) 2015-03-03 2015-03-03 Method of releasably attaching a semiconductor substrate to a carrier
US14/636,981 2015-03-03

Publications (3)

Publication Number Publication Date
JP2016174145A JP2016174145A (ja) 2016-09-29
JP2016174145A5 JP2016174145A5 (enExample) 2017-06-15
JP6346209B2 true JP6346209B2 (ja) 2018-06-20

Family

ID=55262658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016029418A Active JP6346209B2 (ja) 2015-03-03 2016-02-19 一時接合

Country Status (6)

Country Link
US (1) US9644118B2 (enExample)
EP (1) EP3065166B1 (enExample)
JP (1) JP6346209B2 (enExample)
KR (1) KR101767119B1 (enExample)
CN (1) CN105938801B (enExample)
TW (1) TWI619790B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9296915B1 (en) * 2015-04-10 2016-03-29 Dow Global Technologies Llc Toughened arylcyclobutene polymers
JP7201342B2 (ja) * 2018-06-06 2023-01-10 株式会社ディスコ ウエーハの加工方法
JP2019220550A (ja) 2018-06-19 2019-12-26 株式会社ディスコ ウエーハの加工方法
CN108734154B (zh) * 2018-07-27 2023-08-15 星科金朋半导体（江阴）有限公司 一种超薄指纹识别芯片的封装方法及其封装结构
CN108734156B (zh) * 2018-07-27 2023-08-15 星科金朋半导体（江阴）有限公司 一种超薄指纹识别芯片的封装方法及其封装结构
US12040311B1 (en) * 2022-12-22 2024-07-16 The Boeing Company Substrate debonding from bonded part
WO2025094887A1 (ja) * 2023-11-02 2025-05-08 日産化学株式会社 接着剤組成物、積層体、及び加工された半導体基板の製造方法
WO2025205909A1 (ja) * 2024-03-27 2025-10-02 日産化学株式会社 接着剤組成物、積層体、及び加工された半導体基板の製造方法
TW202603117A (zh) * 2024-03-27 2026-01-16 日商日產化學股份有限公司 接著劑組成物、積層體、及加工後之半導體基板之製造方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661193A (en) 1984-08-27 1987-04-28 The Dow Chemical Company Adhesive compositions for arylcyclobutene monomeric compositions
US4812588A (en) 1987-12-14 1989-03-14 The Dow Chemical Company Polyorganosiloxane-bridged bisbenzocyclobutene monomers
US5191026A (en) 1987-12-25 1993-03-02 Nippon Zeon Co., Ltd. Ring-opening hydrogenated copolymer and process for producing the same
US5138081A (en) 1991-04-30 1992-08-11 The Dow Chemical Company Process for purifying vinylically-unsaturated organosilicon compounds
US5136069A (en) 1991-03-28 1992-08-04 The Dow Chemical Company Process for preparing vinylically-unsaturated compounds (II)
US5854302A (en) 1993-04-29 1998-12-29 The Dow Chemical Company Partially polymerized divinylsiloxane linked bisbenzocyclobutene resins and methods for making said resins
EP0647676B1 (de) 1993-10-06 1999-07-21 Ticona GmbH Modifiziertes Cycloolefincopolymer
JPH07118619A (ja) * 1993-10-25 1995-05-09 Sekisui Chem Co Ltd 水溶性粘着剤組成物
CN1103329C (zh) 1995-09-12 2003-03-19 陶氏化学公司 乙炔基取代的芳族化合物,其合成,聚合物及其用途
US5874026A (en) * 1997-12-01 1999-02-23 Calgon Corporation Method of forming corrosion inhibiting films with hydrogenated benzotriazole derivatives
KR100741648B1 (ko) 2000-07-19 2007-07-24 다우 글로벌 테크놀로지스 인크. 피막 증강제를 함유하는 스핀-온-유전성 조성물
US6722950B1 (en) * 2000-11-07 2004-04-20 Planar Labs Corporation Method and apparatus for electrodialytic chemical mechanical polishing and deposition
JP4565804B2 (ja) 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
US7482249B2 (en) 2002-11-29 2009-01-27 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
US6869894B2 (en) 2002-12-20 2005-03-22 General Chemical Corporation Spin-on adhesive for temporary wafer coating and mounting to support wafer thinning and backside processing
JP2005150235A (ja) 2003-11-12 2005-06-09 Three M Innovative Properties Co 半導体表面保護シート及び方法
EP1854136A1 (en) 2005-03-01 2007-11-14 Dow Corning Corporation Temporary wafer bonding method for semiconductor processing
WO2007099146A1 (de) 2006-03-01 2007-09-07 Jakob + Richter Ip-Verwertungsgesellschaft Mbh Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung
US20080014532A1 (en) 2006-07-14 2008-01-17 3M Innovative Properties Company Laminate body, and method for manufacturing thin substrate using the laminate body
US7713835B2 (en) 2006-10-06 2010-05-11 Brewer Science Inc. Thermally decomposable spin-on bonding compositions for temporary wafer bonding
US20080200011A1 (en) * 2006-10-06 2008-08-21 Pillalamarri Sunil K High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach
JP5863157B2 (ja) * 2006-12-18 2016-02-16 日東電工株式会社 粘着シート
JP5256641B2 (ja) 2007-04-06 2013-08-07 Ｊｓｒ株式会社 接着剤組成物
CN101779268B (zh) 2007-06-25 2013-11-06 布鲁尔科技公司 高温旋涂暂时性粘合组合物
US20090017323A1 (en) 2007-07-13 2009-01-15 3M Innovative Properties Company Layered body and method for manufacturing thin substrate using the layered body
JP5111620B2 (ja) 2008-01-24 2013-01-09 ブルーワー サイエンス アイ エヌ シー． デバイスウェーハーをキャリヤー基板に逆に装着する方法
US8092628B2 (en) 2008-10-31 2012-01-10 Brewer Science Inc. Cyclic olefin compositions for temporary wafer bonding
DE102008044200B4 (de) 2008-11-28 2012-08-23 Thin Materials Ag Bonding-Verfahren
DE102008055155B4 (de) 2008-12-23 2026-07-30 Nissan Chemical Industries, Ltd. Trennverfahren für ein Schichtsystem umfassend einen Wafer, Verwendung einer Polymethacrylatscheibe bei dem Verfahren und Vorrichtung zum Durchführen des Verfahrens
WO2010121068A2 (en) 2009-04-16 2010-10-21 Suss Microtec, Inc. Improved apparatus for temporary wafer bonding and debonding
TW201043658A (en) 2009-06-15 2010-12-16 Sumitomo Bakelite Co Temporarily fixing agent for semiconductor wafer and method for producing semiconductor device using the same
TWI479259B (zh) 2009-06-15 2015-04-01 住友電木股份有限公司 A temporary fixing agent for a semiconductor wafer, and a method of manufacturing the semiconductor device using the same
DE102009028025A1 (de) * 2009-07-27 2011-02-03 Henkel Ag & Co. Kgaa Mehrstufiges Verfahren zur Behandlung von Metalloberflächen vor einer Tauchlackierung
WO2011079170A2 (en) 2009-12-23 2011-06-30 Suss Microtec, Inc., Automated thermal slide debonder
US8647964B2 (en) 2010-02-12 2014-02-11 Dow Corning Corporation Temporary wafer bonding method for semiconductor processing
JP2011168663A (ja) 2010-02-17 2011-09-01 Sumitomo Bakelite Co Ltd 有機基板の仮固定剤及びそれを用いた半導体装置の製造方法
US7883991B1 (en) 2010-02-18 2011-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Temporary carrier bonding and detaching processes
US20130071658A1 (en) 2010-03-24 2013-03-21 Sekisui Chemical Co., Ltd. Adhesive composition, adhesive tape, method for processing semiconductor wafer and method for producing tsv wafer
US8852391B2 (en) 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
US8461017B2 (en) 2010-07-19 2013-06-11 Soitec Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
EP2602814A1 (en) * 2010-08-06 2013-06-12 Nitto Denko Corporation Electronic component manufacturing method
DE102011079687A1 (de) 2011-07-22 2013-01-24 Wacker Chemie Ag Temporäre Verklebung von chemisch ähnlichen Substraten
US8696864B2 (en) 2012-01-26 2014-04-15 Promerus, Llc Room temperature debonding composition, method and stack
US9269623B2 (en) * 2012-10-25 2016-02-23 Rohm And Haas Electronic Materials Llc Ephemeral bonding
CN104936628B (zh) * 2012-11-21 2019-03-01 波士顿科学国际有限公司 用于医疗器械的离子亲水性聚合物涂层
US9315696B2 (en) * 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
DE102019205487A1 (de) 2019-04-16 2020-10-22 Robert Bosch Gmbh Teilnehmerstation für ein serielles Bussystem und Verfahren zur Kommunikation in einem seriellen Bussystem

Also Published As

Publication number Publication date
KR20160107097A (ko) 2016-09-13
US9644118B2 (en) 2017-05-09
EP3065166B1 (en) 2025-01-22
US20160257861A1 (en) 2016-09-08
KR101767119B1 (ko) 2017-08-24
EP3065166A1 (en) 2016-09-07
TW201632603A (zh) 2016-09-16
JP2016174145A (ja) 2016-09-29
CN105938801B (zh) 2019-09-20
CN105938801A (zh) 2016-09-14
TWI619790B (zh) 2018-04-01

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