JP6323938B2 - 過渡電磁波耐性を向上させるためのトリガ回路および方法 - Google Patents

過渡電磁波耐性を向上させるためのトリガ回路および方法 Download PDF

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JP6323938B2
JP6323938B2 JP2013233602A JP2013233602A JP6323938B2 JP 6323938 B2 JP6323938 B2 JP 6323938B2 JP 2013233602 A JP2013233602 A JP 2013233602A JP 2013233602 A JP2013233602 A JP 2013233602A JP 6323938 B2 JP6323938 B2 JP 6323938B2
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time value
integrated circuit
detection
state
block
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JP2014103664A (ja
JP2014103664A5 (enExample
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エイ．ストッキンガー マイケル
エイ．ストッキンガー マイケル
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/005—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection avoiding undesired transient conditions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
JP2013233602A 2012-11-20 2013-11-12 過渡電磁波耐性を向上させるためのトリガ回路および方法 Active JP6323938B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/682,604 US9438030B2 (en) 2012-11-20 2012-11-20 Trigger circuit and method for improved transient immunity
US13/682,604 2012-11-20

Publications (3)

Publication Number Publication Date
JP2014103664A JP2014103664A (ja) 2014-06-05
JP2014103664A5 JP2014103664A5 (enExample) 2016-12-22
JP6323938B2 true JP6323938B2 (ja) 2018-05-16

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JP2013233602A Active JP6323938B2 (ja) 2012-11-20 2013-11-12 過渡電磁波耐性を向上させるためのトリガ回路および方法

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Country Link
US (1) US9438030B2 (enExample)
EP (1) EP2733850B1 (enExample)
JP (1) JP6323938B2 (enExample)
CN (1) CN103840445B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9438030B2 (en) * 2012-11-20 2016-09-06 Freescale Semiconductor, Inc. Trigger circuit and method for improved transient immunity
US9025289B1 (en) * 2013-12-12 2015-05-05 Amazing Microelectronic Corp. Low-cost electrostatic discharge (ESD) protection device for high-voltage open-drain pad
FR3038131B1 (fr) * 2015-06-26 2018-03-23 Stmicroelectronics Sa Dispositif de protection ameliore contre les decharges electrostatiques.
US10312230B2 (en) * 2016-02-04 2019-06-04 Nxp Usa, Inc. ESD protection circuit having clamp control loop
US10320185B2 (en) 2016-09-22 2019-06-11 Nxp Usa, Inc. Integrated circuit with protection from transient electrical stress events and method therefor
US10074643B2 (en) 2016-09-22 2018-09-11 Nxp Usa, Inc. Integrated circuit with protection from transient electrical stress events and method therefor
US10971488B2 (en) * 2018-02-06 2021-04-06 Infineon Technologies Ag Active ESD clamp deactivation
US11004843B2 (en) * 2019-01-18 2021-05-11 Nxp Usa, Inc. Switch control circuit for a power switch with electrostatic discharge (ESD) protection
US11315919B2 (en) 2019-02-05 2022-04-26 Nxp Usa, Inc. Circuit for controlling a stacked snapback clamp
US11056879B2 (en) 2019-06-12 2021-07-06 Nxp Usa, Inc. Snapback clamps for ESD protection with voltage limited, centralized triggering scheme
KR102161796B1 (ko) * 2020-03-02 2020-10-05 주식회사 아나패스 전기적 스트레스 보호회로 및 이를 포함하는 전자 장치

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JPH03222516A (ja) 1990-01-29 1991-10-01 Fujitsu Ltd 半導体装置
US5255146A (en) 1991-08-29 1993-10-19 National Semiconductor Corporation Electrostatic discharge detection and clamp control circuit
US5463520A (en) * 1994-05-09 1995-10-31 At&T Ipm Corp. Electrostatic discharge protection with hysteresis trigger circuit
US5508649A (en) 1994-07-21 1996-04-16 National Semiconductor Corporation Voltage level triggered ESD protection circuit
US5917689A (en) 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
US6400546B1 (en) 1999-09-02 2002-06-04 Ati International Srl I/O pad voltage protection circuit and method
US6385021B1 (en) 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit
US6724601B2 (en) 2001-03-16 2004-04-20 Integrated Device Technology, Inc. ESD protection circuit
FR2831328A1 (fr) 2001-10-23 2003-04-25 St Microelectronics Sa Protection d'un circuit integre contre des decharges electrostatiques et autres surtensions
US6760209B1 (en) 2002-05-16 2004-07-06 Lattice Semiconductor Corporation Electrostatic discharge protection circuit
US6724603B2 (en) 2002-08-09 2004-04-20 Motorola, Inc. Electrostatic discharge protection circuitry and method of operation
US7187530B2 (en) 2002-12-27 2007-03-06 T-Ram Semiconductor, Inc. Electrostatic discharge protection circuit
US7245468B2 (en) 2005-02-04 2007-07-17 Agere Systems Inc. Electro-static discharge (ESD) power clamp with power up detection
US7522395B1 (en) 2005-02-22 2009-04-21 Integrated Device Technology, Inc. Electrostatic discharge and electrical overstress protection circuit
US20070115600A1 (en) 2005-11-22 2007-05-24 Lsi Logic Corporation Apparatus and methods for improved circuit protection from EOS conditions during both powered off and powered on states
CN101421896A (zh) * 2006-04-21 2009-04-29 沙诺夫公司 通过电源状态检测的esd箝位控制
JP2009534845A (ja) 2006-04-21 2009-09-24 サーノフ コーポレーション 電力状態の検出によるｅｓｄクランプ制御
US7660086B2 (en) 2006-06-08 2010-02-09 Cypress Semiconductor Corporation Programmable electrostatic discharge (ESD) protection device
US7570468B2 (en) 2006-07-05 2009-08-04 Atmel Corporation Noise immune RC trigger for ESD protection
US20080239599A1 (en) 2007-04-01 2008-10-02 Yehuda Yizraeli Clamping Voltage Events Such As ESD
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US7777998B2 (en) 2007-09-10 2010-08-17 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
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US9438030B2 (en) * 2012-11-20 2016-09-06 Freescale Semiconductor, Inc. Trigger circuit and method for improved transient immunity

Also Published As

Publication number Publication date
JP2014103664A (ja) 2014-06-05
CN103840445A (zh) 2014-06-04
CN103840445B (zh) 2018-09-18
EP2733850A3 (en) 2015-11-04
EP2733850B1 (en) 2020-08-12
US9438030B2 (en) 2016-09-06
US20140139963A1 (en) 2014-05-22
EP2733850A2 (en) 2014-05-21

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