JP6318027B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP6318027B2
JP6318027B2 JP2014132028A JP2014132028A JP6318027B2 JP 6318027 B2 JP6318027 B2 JP 6318027B2 JP 2014132028 A JP2014132028 A JP 2014132028A JP 2014132028 A JP2014132028 A JP 2014132028A JP 6318027 B2 JP6318027 B2 JP 6318027B2
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gas
pressure
conductance
processing chamber
valve
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JP2016012583A (ja
JP2016012583A5 (enExample
Inventor
基裕 田中
基裕 田中
角屋　誠浩
誠浩 角屋
豊 高妻
豊 高妻
北田　裕穂
裕穂 北田
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2014132028A 2014-06-27 2014-06-27 プラズマ処理装置 Active JP6318027B2 (ja)

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JP2014132028A JP6318027B2 (ja) 2014-06-27 2014-06-27 プラズマ処理装置

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JP2014132028A JP6318027B2 (ja) 2014-06-27 2014-06-27 プラズマ処理装置

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JP2016012583A JP2016012583A (ja) 2016-01-21
JP2016012583A5 JP2016012583A5 (enExample) 2017-02-16
JP6318027B2 true JP6318027B2 (ja) 2018-04-25

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JP2014132028A Active JP6318027B2 (ja) 2014-06-27 2014-06-27 プラズマ処理装置

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9972478B2 (en) * 2016-09-16 2018-05-15 Lam Research Corporation Method and process of implementing machine learning in complex multivariate wafer processing equipment
JP2021174902A (ja) * 2020-04-27 2021-11-01 東京エレクトロン株式会社 処理方法及び基板処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003161281A (ja) * 2001-11-28 2003-06-06 Tokyo Electron Ltd 真空処理装置
JP4908045B2 (ja) * 2006-04-17 2012-04-04 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP5235293B2 (ja) * 2006-10-02 2013-07-10 東京エレクトロン株式会社 処理ガス供給機構および処理ガス供給方法ならびにガス処理装置
JP4815538B2 (ja) * 2010-01-15 2011-11-16 シーケーディ株式会社 真空制御システムおよび真空制御方法
JP5528363B2 (ja) * 2011-01-20 2014-06-25 パナソニック株式会社 プラズマ処理方法及びプラズマ処理装置
JP2011166167A (ja) * 2011-05-16 2011-08-25 Hitachi High-Technologies Corp プラズマエッチング装置およびプラズマエッチング方法

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