JP6316824B2 - 薄膜を有する太陽電池の製造方法 - Google Patents
薄膜を有する太陽電池の製造方法 Download PDFInfo
- Publication number
- JP6316824B2 JP6316824B2 JP2015534739A JP2015534739A JP6316824B2 JP 6316824 B2 JP6316824 B2 JP 6316824B2 JP 2015534739 A JP2015534739 A JP 2015534739A JP 2015534739 A JP2015534739 A JP 2015534739A JP 6316824 B2 JP6316824 B2 JP 6316824B2
- Authority
- JP
- Japan
- Prior art keywords
- processing chamber
- solar cell
- gas
- thin film
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 91
- 239000010409 thin film Substances 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 80
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 80
- 239000007789 gas Substances 0.000 claims description 72
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 49
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 45
- 239000011737 fluorine Substances 0.000 claims description 45
- 229910052731 fluorine Inorganic materials 0.000 claims description 45
- 239000010408 film Substances 0.000 claims description 32
- 238000007789 sealing Methods 0.000 claims description 29
- 238000011109 contamination Methods 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 15
- 229910000077 silane Inorganic materials 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 50
- 239000006117 anti-reflective coating Substances 0.000 description 34
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 235000011194 food seasoning agent Nutrition 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000010561 standard procedure Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- OKIIEJOIXGHUKX-UHFFFAOYSA-L cadmium iodide Chemical compound [Cd+2].[I-].[I-] OKIIEJOIXGHUKX-UHFFFAOYSA-L 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229940075417 cadmium iodide Drugs 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
Description
[項目1]
薄膜を基板上に形成する方法であって、
フッ素を含む第1のガスを処理チャンバ内に流入させることによって、上記処理チャンバを洗浄する工程と、
第2のガスを第1の持続時間で上記処理チャンバ内に流入させることによって、アモルファスシリコンを含む第1の封止層で上記処理チャンバをコーティングする工程であって、上記第1の封止層はフッ素汚染を防ぐ、工程と、
上記処理チャンバを上記第1の封止層でコーティングした後、基板を上記処理チャンバ内にローディングする工程と、
第3のガスを上記処理チャンバ内に流入させることによって薄膜を上記基板上に堆積させる工程と、
上記基板を上記処理チャンバからアンローディングする工程と、を含む方法。
[項目2]
上記薄膜が窒化シリコン(SiN)膜である、請求項1に記載の方法。
[項目3]
上記第1のガスが三フッ化窒素(NF 3 )を含む、請求項1に記載の方法。
[項目4]
上記第2のガスがシラン(SiH 4 )を含む、請求項1に記載の方法。
[項目5]
上記第3のガスがシラン(SiH 4 )、アンモニア(NH 3 )及び窒素(N 2 )を含む群から選択される気体を含む、請求項1に記載の方法。
[項目6]
上記第1の持続時間が0.5〜5分の範囲である、請求項1に記載の方法。
[項目7]
上記基板が太陽電池である、請求項1に記載の方法。
[項目8]
薄膜を上記基板上に形成することが、窒化シリコン膜を含む反射防止コーティング(ARC)を上記太陽電池上に形成することを含む、請求項7に記載の方法。
[項目9]
上記基板が液晶ディスプレイ(LCD)である、請求項1に記載の方法。
[項目10]
薄膜を液晶ディスプレイ(LCD)上に形成することが、絶縁層を液晶ディスプレイ(LCD)上に形成することを含む、請求項9に記載の方法。
[項目11]
窒化シリコン膜を太陽電池上に形成する方法であって、
過剰な窒化シリコン(SiN)を除去するために、フッ素を含む第1のガスを処理チャンバ内に流入させる工程によって上記処理チャンバを洗浄する工程と、
第2のガスを第1の持続時間で上記処理チャンバ内に流入させることによって、上記処理チャンバをアモルファスシリコンでコーティングする工程であって、アモルファスシリコンはフッ素汚染を防ぐ第1の封止層を形成する、工程と、
太陽電池を上記処理チャンバ内にローディングする工程と、
窒化シリコン膜を上記太陽電池上にプラズマ強化化学気相成長によって堆積させる工程と、
上記太陽電池を上記処理チャンバからアンローディングする工程と、を含む方法。
[項目12]
上記第1のガスが三フッ化窒素(NF 3 )を含む、請求項11に記載の方法。
[項目13]
上記第2のガスがシラン(SiH 4 )を含む、請求項11に記載の方法。
[項目14]
上記第3のガスがシラン(SiH 4 )、アンモニア(NH 3 )及び窒素(N 2 )を含む群から選択される気体を含む、請求項11に記載の方法。
[項目15]
上記第1の持続時間が0.5〜5分の範囲である、請求項11に記載の方法。
[項目16]
アモルファスシリコンが上記第1の封止層を0.05〜0.5ミクロンの範囲の厚さで形成する、請求項11に記載の方法。
[項目17]
窒化シリコン膜を太陽電池上に形成する方法であって、上記太陽電池は、平常操作中、太陽に向かうように構成された前面と、該前面の反対側の裏面とを有しており、上記方法は、
過剰な窒化シリコン(SiN)を除去するために、三フッ化窒素(NF 3 )ガスを流入させることによって処理チャンバを洗浄する工程と、
最高5分間シラン(SiH 4 )ガスを流入させることによって、上記処理チャンバをアモルファスシリコンでコーティングする工程であって、アモルファスシリコンはフッ素汚染を防ぐ第1の封止層を形成する、工程と、
上記太陽電池を上記処理チャンバ内にローディングする工程と、
シラン(SiH 4 )、アンモニア(NH 3 )及び窒素(N 2 )ガスのプラズマ強化化学気相成長(PECVD)によって、窒化シリコン(SiN)膜を含む反射防止コーティング(ARC)を上記太陽電池の前面に堆積させる工程と、
上記太陽電池を上記処理チャンバからアンローディングする工程と、を含む方法。
[項目18]
窒化シリコン(SiN)膜を太陽電池の前面に形成することが、太陽電池の裏面に反射防止コーティング(BARC)を形成することを含む、請求項17に記載の方法。
[項目19]
上記太陽電池が、バックコンタクト型太陽電池、フロントコンタクト型太陽電池、単結晶シリコン太陽電池、多結晶シリコン太陽電池、アモルファスシリコン太陽電池、薄膜シリコン太陽電池、銅インジウムガリウムセレン(CIGS)太陽電池及びテルル化カドミウム太陽電池を含む群から選択される太陽電池を含む、請求項17に記載の方法。
[項目20]
アモルファスシリコンが第1の封止層を0.05〜0.5ミクロンの範囲の厚さで形成する、請求項17に記載の方法。
Claims (6)
- 薄膜を有する太陽電池の製造方法あって、
フッ素を含む第1のガスを処理チャンバ内に流入させることによって、前記処理チャンバを洗浄する工程と、
第2のガスを第1の持続時間で前記処理チャンバ内に流入させることによって、アモルファスシリコンである第1の封止層で前記処理チャンバをコーティングする工程であって、前記第1の封止層はフッ素汚染を防ぐ、工程と、
前記処理チャンバを前記第1の封止層でコーティングした後、太陽電池を前記処理チャンバ内にローディングする工程と、
第3のガスを前記処理チャンバ内に流入させることによって薄膜を前記太陽電池上に堆積させる工程と、
前記太陽電池を前記処理チャンバからアンローディングする工程と、を含み、
前記洗浄する工程および前記コーティングする工程において、前記第1のガスおよび前記第2のガスを前記処理チャンバ内に流入させるために機能するシャワーヘッドと、前記処理チャンバ内において前記太陽電池を保持する処理トレイとの距離が一定であり、
前記太陽電池上の薄膜は、反射防止コーティング(ARC)に使用される窒化シリコン膜である
製造方法。 - 前記第1のガスが三フッ化窒素(NF3)を含む、請求項1に記載の製造方法。
- 前記第2のガスがシラン(SiH4)を含む、請求項1または2に記載の製造方法。
- 前記第3のガスがシラン(SiH4)、アンモニア(NH3)及び窒素(N2)から成る群から選択される気体を含む、請求項1〜3のいずれか一項に記載の製造方法。
- 前記第1の持続時間が0.5〜5分の範囲である、請求項1〜4のいずれか一項に記載の製造方法。
- アモルファスシリコンである第1の封止層で前記処理チャンバをコーティングすることが、アモルファスシリコンである0.05〜0.5ミクロンの範囲の厚さを有する第1の封止層で前記処理チャンバをコーティングすることを含む、請求項1〜5のいずれか一項に記載の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/628,671 US8877617B2 (en) | 2012-09-27 | 2012-09-27 | Methods and structures for forming and protecting thin films on substrates |
US13/628,671 | 2012-09-27 | ||
PCT/US2013/062162 WO2014052747A2 (en) | 2012-09-27 | 2013-09-27 | Methods and structures for forming and protecting thin films on substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016502748A JP2016502748A (ja) | 2016-01-28 |
JP6316824B2 true JP6316824B2 (ja) | 2018-04-25 |
Family
ID=50339235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015534739A Active JP6316824B2 (ja) | 2012-09-27 | 2013-09-27 | 薄膜を有する太陽電池の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8877617B2 (ja) |
JP (1) | JP6316824B2 (ja) |
KR (1) | KR102223561B1 (ja) |
CN (1) | CN104769152B (ja) |
MY (1) | MY182212A (ja) |
TW (1) | TWI605610B (ja) |
WO (1) | WO2014052747A2 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106571289B (zh) * | 2015-10-13 | 2020-01-03 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法、电子装置 |
USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
CN106898676B (zh) * | 2017-02-06 | 2018-11-27 | 苏州润阳光伏科技有限公司 | 一种可修复氮化硅界面复合态的方法 |
US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
US11443919B2 (en) | 2019-02-11 | 2022-09-13 | Applied Materials, Inc. | Film formation via pulsed RF plasma |
CN110739372B (zh) * | 2019-08-28 | 2020-12-04 | 华灿光电(苏州)有限公司 | 发光二极管外延生长反应腔的恢复方法及其外延生长方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3471082B2 (ja) * | 1994-07-15 | 2003-11-25 | 株式会社東芝 | Cvd装置の反応室のコーティング方法 |
JP3593363B2 (ja) * | 1994-08-10 | 2004-11-24 | 株式会社東芝 | 半導体薄膜を具備するアクティブマトリックス型液晶表示装置の製造方法 |
US20030143410A1 (en) * | 1997-03-24 | 2003-07-31 | Applied Materials, Inc. | Method for reduction of contaminants in amorphous-silicon film |
US6472336B1 (en) | 2000-02-23 | 2002-10-29 | Advanced Micro Devices, Inc. | Forming an encapsulating layer after deposition of a dielectric comprised of corrosive material |
TW522475B (en) * | 2000-05-12 | 2003-03-01 | Applied Materials Inc | Method for improving chemical vapor deposition processing |
US6875674B2 (en) * | 2000-07-10 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device with fluorine concentration |
US7419702B2 (en) | 2004-03-31 | 2008-09-02 | Tokyo Electron Limited | Method for processing a substrate |
US20060228490A1 (en) * | 2005-04-07 | 2006-10-12 | Applied Materials, Inc. | Gas distribution uniformity improvement by baffle plate with multi-size holes for large size PECVD systems |
US7875486B2 (en) * | 2007-07-10 | 2011-01-25 | Applied Materials, Inc. | Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning |
JP4488039B2 (ja) | 2007-07-25 | 2010-06-23 | ソニー株式会社 | 薄膜半導体装置の製造方法 |
US7951637B2 (en) | 2008-08-27 | 2011-05-31 | Applied Materials, Inc. | Back contact solar cells using printed dielectric barrier |
JP2011238747A (ja) * | 2010-05-10 | 2011-11-24 | Shimadzu Corp | プラズマcvd成膜装置および高周波電圧の印加方法 |
-
2012
- 2012-09-27 US US13/628,671 patent/US8877617B2/en active Active
-
2013
- 2013-09-27 KR KR1020157010260A patent/KR102223561B1/ko active IP Right Grant
- 2013-09-27 CN CN201380058277.3A patent/CN104769152B/zh active Active
- 2013-09-27 WO PCT/US2013/062162 patent/WO2014052747A2/en active Application Filing
- 2013-09-27 JP JP2015534739A patent/JP6316824B2/ja active Active
- 2013-09-27 TW TW102135222A patent/TWI605610B/zh active
- 2013-09-27 MY MYPI2015000735A patent/MY182212A/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN104769152B (zh) | 2018-02-02 |
MY182212A (en) | 2021-01-18 |
TWI605610B (zh) | 2017-11-11 |
US8877617B2 (en) | 2014-11-04 |
TW201421723A (zh) | 2014-06-01 |
KR20150065743A (ko) | 2015-06-15 |
CN104769152A (zh) | 2015-07-08 |
WO2014052747A3 (en) | 2014-10-23 |
KR102223561B1 (ko) | 2021-03-05 |
US20140087496A1 (en) | 2014-03-27 |
JP2016502748A (ja) | 2016-01-28 |
WO2014052747A2 (en) | 2014-04-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6316824B2 (ja) | 薄膜を有する太陽電池の製造方法 | |
US7741144B2 (en) | Plasma treatment between deposition processes | |
US7582515B2 (en) | Multi-junction solar cells and methods and apparatuses for forming the same | |
US7846762B2 (en) | Integrated emitter formation and passivation | |
US20080173350A1 (en) | Multi-junction solar cells and methods and apparatuses for forming the same | |
US20080254203A1 (en) | Silicon nitride passivation for a solar cell | |
US20100279492A1 (en) | Method of Fabricating Upgraded Metallurgical Grade Silicon by External Gettering Procedure | |
TW200913292A (en) | Multi-junction solar cells and methods and apparatuses for forming the same | |
CN104094418A (zh) | 硅基太阳能电池的钝化薄膜堆叠 | |
US8404052B2 (en) | Method for cleaning the surface of a silicon substrate | |
JP2012523715A (ja) | 太陽電池用の微結晶シリコン層を形成するパルスプラズマ堆積 | |
US20220238748A1 (en) | Solar cell and preparation method therefor, method for processing n-type doped silicon film, and semiconductor device | |
CN111987182A (zh) | TOPCon太阳能电池及其制造方法 | |
Shin et al. | Optimization of intrinsic hydrogenated amorphous silicon deposited by very high-frequency plasma-enhanced chemical vapor deposition using the relationship between Urbach energy and silane depletion fraction for solar cell application | |
US20090130827A1 (en) | Intrinsic amorphous silicon layer | |
CN111261751A (zh) | 一种单面非晶硅的沉积方法 | |
US20190249306A1 (en) | Apparatus and methods for reducing cross-contamination in cvd systems | |
CN114497260B (zh) | 用于制造异质结太阳能电池的方法及异质结太阳能电池 | |
CN102610694A (zh) | 一种太阳电池双层减反射膜的制备方法 | |
JP2007519245A (ja) | 微結晶シリコン層を備えたシリコン太陽電池の製造方法 | |
JP2001291882A (ja) | 薄膜の製造方法 | |
WO2012092051A2 (en) | Photovoltaic device structure with primer layer | |
Dao et al. | Hydrogenated amorphous silicon layer formation by inductively coupled plasma chemical vapor deposition and its application for surface passivation of p-type crystalline silicon | |
JP2007027469A (ja) | 太陽電池素子の製造方法 | |
WO2013121538A1 (ja) | 半導体製膜装置、半導体装置の製造方法、および半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160912 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170512 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170523 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170823 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170904 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180227 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180328 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6316824 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |