JP6308364B2 - サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ - Google Patents
サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ Download PDFInfo
- Publication number
- JP6308364B2 JP6308364B2 JP2014100660A JP2014100660A JP6308364B2 JP 6308364 B2 JP6308364 B2 JP 6308364B2 JP 2014100660 A JP2014100660 A JP 2014100660A JP 2014100660 A JP2014100660 A JP 2014100660A JP 6308364 B2 JP6308364 B2 JP 6308364B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- film
- metal nitride
- nitride material
- strong
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title claims description 137
- 229910052751 metal Inorganic materials 0.000 title claims description 82
- 239000002184 metal Substances 0.000 title claims description 82
- 150000004767 nitrides Chemical class 0.000 title claims description 78
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000010408 film Substances 0.000 claims description 149
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 70
- 239000013078 crystal Substances 0.000 claims description 55
- 239000010409 thin film Substances 0.000 claims description 50
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 42
- 229910052719 titanium Inorganic materials 0.000 claims description 41
- 229910052804 chromium Inorganic materials 0.000 claims description 40
- 229910052757 nitrogen Inorganic materials 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 21
- 238000005546 reactive sputtering Methods 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 17
- 229910000838 Al alloy Inorganic materials 0.000 claims description 12
- 238000005477 sputtering target Methods 0.000 claims description 9
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 27
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 22
- 239000000758 substrate Substances 0.000 description 19
- 229910018509 Al—N Inorganic materials 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- 238000011156 evaluation Methods 0.000 description 14
- 238000010304 firing Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 238000002441 X-ray diffraction Methods 0.000 description 11
- 239000011780 sodium chloride Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000010587 phase diagram Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910052720 vanadium Inorganic materials 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000012787 coverlay film Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000004445 quantitative analysis Methods 0.000 description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 3
- 229910019582 Cr V Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910019590 Cr-N Inorganic materials 0.000 description 1
- 229910019588 Cr—N Inorganic materials 0.000 description 1
- 229910004491 TaAlN Inorganic materials 0.000 description 1
- 229910004688 Ti-V Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910010968 Ti—V Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001988 small-angle X-ray diffraction Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/06—Epitaxial-layer growth by reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Thermistors And Varistors (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014100660A JP6308364B2 (ja) | 2013-06-05 | 2014-05-14 | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013119166 | 2013-06-05 | ||
| JP2013119166 | 2013-06-05 | ||
| JP2013154693 | 2013-07-25 | ||
| JP2013154695 | 2013-07-25 | ||
| JP2013154695 | 2013-07-25 | ||
| JP2013154693 | 2013-07-25 | ||
| JP2014100660A JP6308364B2 (ja) | 2013-06-05 | 2014-05-14 | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015043409A JP2015043409A (ja) | 2015-03-05 |
| JP6308364B2 true JP6308364B2 (ja) | 2018-04-11 |
Family
ID=52008275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014100660A Expired - Fee Related JP6308364B2 (ja) | 2013-06-05 | 2014-05-14 | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6308364B2 (zh) |
| CN (1) | CN105144311A (zh) |
| TW (1) | TW201502107A (zh) |
| WO (1) | WO2014196649A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6680995B2 (ja) * | 2015-03-26 | 2020-04-15 | 三菱マテリアル株式会社 | 窒化物熱電変換材料及びその製造方法並びに熱電変換素子 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2579470B2 (ja) * | 1986-10-14 | 1997-02-05 | 株式会社富士通ゼネラル | 窒化物の薄膜抵抗体製造方法 |
| JPH0590011A (ja) * | 1991-09-26 | 1993-04-09 | Anritsu Corp | 感温抵抗体及びその製造方法 |
| JPH06158272A (ja) * | 1992-11-17 | 1994-06-07 | Ulvac Japan Ltd | 抵抗膜および抵抗膜の製造方法 |
| JP3642449B2 (ja) * | 1997-03-21 | 2005-04-27 | 財団法人電気磁気材料研究所 | Ｃｒ−Ｎ基歪抵抗膜およびその製造法ならびに歪センサ |
| JP4436064B2 (ja) * | 2003-04-16 | 2010-03-24 | 大阪府 | サーミスタ用材料及びその製造方法 |
| JP4760753B2 (ja) * | 2007-03-29 | 2011-08-31 | 三菱マテリアル株式会社 | 薄型複合素子及びその製造方法 |
-
2014
- 2014-05-14 JP JP2014100660A patent/JP6308364B2/ja not_active Expired - Fee Related
- 2014-06-02 WO PCT/JP2014/065168 patent/WO2014196649A1/ja active Application Filing
- 2014-06-02 CN CN201480022247.1A patent/CN105144311A/zh active Pending
- 2014-06-04 TW TW103119355A patent/TW201502107A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015043409A (ja) | 2015-03-05 |
| WO2014196649A1 (ja) | 2014-12-11 |
| TW201502107A (zh) | 2015-01-16 |
| CN105144311A (zh) | 2015-12-09 |
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