JP6290245B2 - Ｍｏｔｆｅｔを有するピクセル化されたイメージャおよびその製造方法 - Google Patents

Ｍｏｔｆｅｔを有するピクセル化されたイメージャおよびその製造方法 Download PDF

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JP6290245B2
JP6290245B2 JP2015547452A JP2015547452A JP6290245B2 JP 6290245 B2 JP6290245 B2 JP 6290245B2 JP 2015547452 A JP2015547452 A JP 2015547452A JP 2015547452 A JP2015547452 A JP 2015547452A JP 6290245 B2 JP6290245 B2 JP 6290245B2
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layer
array
semiconductor material
forming
photodiode
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Japanese (ja)
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JP2016506620A (ja
JP2016506620A5 (enExample
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シェ，チャンロン
ユ，ガン
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CBRITE Inc
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CBRITE Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
JP2015547452A 2012-12-13 2013-12-09 Ｍｏｔｆｅｔを有するピクセル化されたイメージャおよびその製造方法 Expired - Fee Related JP6290245B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/713,744 US8962377B2 (en) 2012-12-13 2012-12-13 Pixelated imager with motfet and process
US13/713,744 2012-12-13
PCT/US2013/073920 WO2014093244A1 (en) 2012-12-13 2013-12-09 Pixelated imager with motfet and process

Publications (3)

Publication Number Publication Date
JP2016506620A JP2016506620A (ja) 2016-03-03
JP2016506620A5 JP2016506620A5 (enExample) 2017-02-16
JP6290245B2 true JP6290245B2 (ja) 2018-03-07

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JP2015547452A Expired - Fee Related JP6290245B2 (ja) 2012-12-13 2013-12-09 Ｍｏｔｆｅｔを有するピクセル化されたイメージャおよびその製造方法

Country Status (6)

Country Link
US (1) US8962377B2 (enExample)
EP (1) EP2932534B8 (enExample)
JP (1) JP6290245B2 (enExample)
KR (1) KR20150095838A (enExample)
CN (1) CN104854710B (enExample)
WO (1) WO2014093244A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9362413B2 (en) * 2013-11-15 2016-06-07 Cbrite Inc. MOTFT with un-patterned etch-stop
WO2015143011A1 (en) 2014-03-19 2015-09-24 Bidirectional Display Inc. Image sensor panel and method for capturing graphical information using same
US9122349B1 (en) 2014-03-19 2015-09-01 Bidirectional Display Inc. Image sensor panel and method for capturing graphical information using same
US9520437B2 (en) * 2014-08-14 2016-12-13 Cbrite Inc. Flexible APS X-ray imager with MOTFT pixel readout and a pin diode sensing element
US9793252B2 (en) 2015-03-30 2017-10-17 Emagin Corporation Method of integrating inorganic light emitting diode with oxide thin film transistor for display applications
US20160313282A1 (en) * 2015-04-27 2016-10-27 Chan-Long Shieh Motft and array circuit for chemical/biochemical applications
US9871067B2 (en) * 2015-11-17 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Infrared image sensor component
US10444378B1 (en) * 2018-04-27 2019-10-15 Varian Medical Systems, Inc. Imaging devices
US11016202B2 (en) * 2018-04-26 2021-05-25 Varian Medical Systems, Inc. Imaging devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5435608A (en) * 1994-06-17 1995-07-25 General Electric Company Radiation imager with common passivation dielectric for gate electrode and photosensor
US6124606A (en) * 1995-06-06 2000-09-26 Ois Optical Imaging Systems, Inc. Method of making a large area imager with improved signal-to-noise ratio
US6060714A (en) * 1998-01-23 2000-05-09 Ois Optical Imaging Systems, Inc. Large area imager with photo-imageable interface barrier layer
KR101112543B1 (ko) * 2004-11-04 2012-03-13 삼성전자주식회사 다중 도메인 박막 트랜지스터 표시판
US9543356B2 (en) * 2009-03-10 2017-01-10 Globalfoundries Inc. Pixel sensor cell including light shield
TWI424574B (zh) * 2009-07-28 2014-01-21 Prime View Int Co Ltd 數位ｘ光探測面板及其製作方法
WO2011055625A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
US8278690B2 (en) * 2010-04-27 2012-10-02 Omnivision Technologies, Inc. Laser anneal for image sensors
US8507962B2 (en) * 2010-10-04 2013-08-13 International Business Machines Corporation Isolation structures for global shutter imager pixel, methods of manufacture and design structures
US8791419B2 (en) * 2010-12-15 2014-07-29 Carestream Health, Inc. High charge capacity pixel architecture, photoelectric conversion apparatus, radiation image pickup system and methods for same

Also Published As

Publication number Publication date
US8962377B2 (en) 2015-02-24
EP2932534B8 (en) 2018-01-10
JP2016506620A (ja) 2016-03-03
CN104854710A (zh) 2015-08-19
US20140167046A1 (en) 2014-06-19
KR20150095838A (ko) 2015-08-21
EP2932534B1 (en) 2017-08-30
EP2932534A1 (en) 2015-10-21
WO2014093244A1 (en) 2014-06-19
EP2932534A4 (en) 2016-08-10
CN104854710B (zh) 2017-06-20

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