JP6282250B2 - Substrate liquid processing apparatus and substrate liquid processing method - Google Patents

Substrate liquid processing apparatus and substrate liquid processing method Download PDF

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JP6282250B2
JP6282250B2 JP2015167844A JP2015167844A JP6282250B2 JP 6282250 B2 JP6282250 B2 JP 6282250B2 JP 2015167844 A JP2015167844 A JP 2015167844A JP 2015167844 A JP2015167844 A JP 2015167844A JP 6282250 B2 JP6282250 B2 JP 6282250B2
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substrate
liquid
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moisture
supply unit
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JP2016054294A (en
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ヨン サン チョ
ヨン サン チョ
ハン オ キム
ハン オ キム
サン ドク ノ
サン ドク ノ
カン ウォン キム
カン ウォン キム
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ゼウス カンパニー リミテッド
ゼウス カンパニー リミテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Description

本発明は、半導体用基板をエッチング及び洗浄する基板液処理装置に関するものである。   The present invention relates to a substrate liquid processing apparatus for etching and cleaning a semiconductor substrate.

半導体素子製造のためには、基板上に多層の薄膜を形成しており、エッチング及び洗浄工程は必須である。   In order to manufacture a semiconductor device, a multilayer thin film is formed on a substrate, and etching and cleaning processes are essential.

一般に、湿式エッチング及び洗浄装置は、基板を支持するチャックが設けられたテーブルを回転させながら、処理液を基板に供給し、エッチング、洗浄及び乾燥工程を行い、テーブルの周りにカップ構造を有する処理液回収部を利用して処理液を回収している。   In general, a wet etching and cleaning apparatus supplies a processing liquid to a substrate while rotating a table provided with a chuck that supports the substrate, and performs etching, cleaning, and drying processes, and has a cup structure around the table. The processing liquid is recovered using the liquid recovery unit.

一方、基板に蒸着された窒化膜、酸化膜、金属膜などの薄膜やフォトレジストなどを基板から速やかに除去するためには、工程を高温状態に保持する必要があった。   On the other hand, in order to quickly remove a thin film such as a nitride film, an oxide film, and a metal film deposited on the substrate, a photoresist, and the like from the substrate, it is necessary to maintain the process at a high temperature.

このように、高温で処理液を供給する場合、処理液に含まれた水分は、他の成分より沸点が低く急速に蒸発し、処理液の濃度が高くなる。これにより、基板液処理装置内パーティクルが多量発生し、処理液の濃度変化によって処理効率が低くなる問題点があった。   Thus, when supplying a processing liquid at high temperature, the water | moisture content contained in the processing liquid evaporates rapidly with a boiling point lower than other components, and the density | concentration of a processing liquid becomes high. As a result, a large amount of particles in the substrate liquid processing apparatus is generated, and there is a problem that the processing efficiency is lowered due to a change in the concentration of the processing liquid.

前述した背景技術の問題点を解決するために、本発明は、高温での基板液処理工程時、処理液の濃度を均一に維持する基板液処理装置及び基板液処理方法を提供することにその目的がある。   In order to solve the above-described problems of the background art, the present invention provides a substrate liquid processing apparatus and a substrate liquid processing method for maintaining a uniform concentration of a processing liquid during a substrate liquid processing step at a high temperature. There is a purpose.

前述した課題を解決するための本発明の基板液処理装置は、テーブル上部に基板を離隔し、支持する基板支持部と、前記テーブルを回転させる回転軸を駆動する回転駆動部と、前記基板の処理面を処理する処理液を供給する処理液供給部と、前記基板又は前記処理液の少なくとも一つを加熱する加熱部と、前記テーブルの周りに設けられ、基板から排出される処理液を回収する処理液回収部と、前記処理液が供給される空間に水分を供給する水分供給部と、を含む。   A substrate liquid processing apparatus of the present invention for solving the above-described problems includes a substrate support unit that separates and supports a substrate on an upper part of a table, a rotation drive unit that drives a rotation shaft that rotates the table, A processing liquid supply unit that supplies a processing liquid for processing the processing surface, a heating unit that heats at least one of the substrate or the processing liquid, and a processing liquid that is provided around the table and is discharged from the substrate is collected. And a moisture supply unit that supplies moisture to a space to which the treatment liquid is supplied.

好ましくは、前記水分供給部は、水分をミスト又は蒸気状態で噴射する。   Preferably, the moisture supply unit injects moisture in a mist or vapor state.

好ましくは、前記水分供給部の水分を噴射する噴射口は１以上のホール又はスリット形態に形成される。   Preferably, the spray port for spraying moisture from the moisture supply unit is formed in one or more holes or slits.

好ましくは、前記基板は、処理面が上部に向かって支持され、前記処理液と前記水分は、前記基板の上部空間に供給される。   Preferably, the processing surface of the substrate is supported upward, and the processing liquid and the moisture are supplied to the upper space of the substrate.

好ましくは、前記基板の上部で前記処理液供給部を往復駆動させる駆動手段と更に含み、前記水分供給部は、前記基板の上部空間に設けられる。   Preferably, the apparatus further includes driving means for reciprocatingly driving the processing liquid supply unit above the substrate, and the moisture supply unit is provided in an upper space of the substrate.

好ましくは、前記基板の上部で前記処理液供給部を往復駆動させる駆動手段を更に含み、前記水分供給部は、前記駆動手段により前記処理液供給部と共に往復駆動される。   Preferably, the apparatus further includes a driving unit that reciprocates the processing liquid supply unit above the substrate, and the water supply unit is reciprocated by the driving unit together with the processing liquid supply unit.

好ましくは、前記基板の上部で前記処理液供給部を往復駆動させる駆動手段を更に含み、前記処理液回収部は、内側が突出された１以上のカップを備え、前記水分供給部は、前記カップに設けられる１以上のノズルからなる。   Preferably, the apparatus further includes driving means for reciprocatingly driving the processing liquid supply unit above the substrate, wherein the processing liquid recovery unit includes one or more cups protruding inside, and the moisture supply unit includes the cup. It consists of one or more nozzles provided in.

好ましくは、前記基板は、処理面が下部に向かって支持され、前記処理液と前記水分は、前記基板とテーブル間の空間に供給される。   Preferably, the processing surface of the substrate is supported toward a lower portion, and the processing liquid and the moisture are supplied to a space between the substrate and the table.

好ましくは、前記処理液供給部と前記水分供給部は、それぞれ前記テーブルの上部中央部分に設けられる１以上のノズルからなる。   Preferably, each of the processing liquid supply unit and the water supply unit includes one or more nozzles provided at an upper center portion of the table.

好ましくは、前記処理液供給部は、前記テーブルの上部中央部分に設けられる１以上のノズルからなり、前記処理液回収部は、内側が突出された１以上のカップを備え、前記水分供給部は、前記カップに設けられる１以上のノズルからなる。   Preferably, the processing liquid supply unit includes one or more nozzles provided at an upper center portion of the table, the processing liquid recovery unit includes one or more cups protruding inside, and the moisture supply unit includes And one or more nozzles provided in the cup.

好ましくは、前記水分供給部のノズルは、前記基板の水平面に対して０゜〜２０゜傾いて水分を噴射する。   Preferably, the nozzle of the moisture supply unit injects moisture at an angle of 0 ° to 20 ° with respect to the horizontal plane of the substrate.

好ましくは、前記処理液は、ＳＰＭ（硫酸と過酸化水素水の混合物）である。   Preferably, the treatment liquid is SPM (a mixture of sulfuric acid and hydrogen peroxide solution).

好ましくは、前記水分は、ＤＩＷ（脱イオン水）を不活性ガスと混合して供給するか、ＤＩＷに不活性ガスを溶解させて供給する。   Preferably, the water is supplied by mixing DIW (deionized water) with an inert gas or by dissolving the inert gas in DIW.

好ましくは、前記水分を、常温より高く、沸点より低い温度で供給する。   Preferably, the moisture is supplied at a temperature higher than room temperature and lower than the boiling point.

上述した課題を解決するための本発明の基板液処理方法は、前記基板又は前記基板に提供される処理液の少なくとも一つを加熱しながら、前記処理液が供給される空間に水分を供給する。   In the substrate liquid processing method of the present invention for solving the above-described problems, moisture is supplied to the substrate or a space to which the processing liquid is supplied while heating at least one of the processing liquids provided to the substrate. .

好ましくは、前記処理液は、前記処理面のエッチング工程又はＰＲストリップ工程に用いられる薬液である。   Preferably, the processing liquid is a chemical liquid used in the etching process or PR strip process of the processing surface.

好ましくは、前記水分は、前記処理液と同時に噴射される。   Preferably, the moisture is sprayed simultaneously with the treatment liquid.

好ましくは、前記処理液を供給する時間と前記水分を供給する時間が少なくとも一部重なることを特徴とする。   Preferably, the time for supplying the treatment liquid and the time for supplying the moisture overlap at least partially.

本発明の基板液処理装置によれば、高温液処理工程で、処理液を供給する空間に水分を供給することによって、処理液の濃度を均一に維持させ、処理効率を向上させることができる。   According to the substrate liquid processing apparatus of the present invention, in the high-temperature liquid processing step, by supplying moisture to the space for supplying the processing liquid, the concentration of the processing liquid can be maintained uniformly and the processing efficiency can be improved.

本発明の第１の実施例に係る構成図である。1 is a configuration diagram according to a first embodiment of the present invention. 本発明の第２の実施例に係る構成図である。It is a block diagram concerning the 2nd example of the present invention. 本発明の第３の実施例に係る構成図である。It is a block diagram concerning the 3rd example of the present invention. 本発明の第４の実施例に係る構成図である。It is a block diagram concerning the 4th example of the present invention. 本発明の第５の実施例に係る構成図である。It is a block diagram concerning the 5th example of the present invention.

以下では、本発明の実施例を、図面を参考して、具体的に説明する。本発明の基板液処理装置は、第１〜第５の実施例に分けられ、各実施例の構成要素は基本的に同じであるが、一部構成において差がある。また、発明の実施例中の同じ機能と作用をする構成要素に対しては図面上、同じ符号を付する。   Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings. The substrate liquid processing apparatus of the present invention is divided into first to fifth embodiments, and the components of each embodiment are basically the same, but there are differences in some configurations. In the drawings, the same reference numerals are given to components having the same functions and operations in the embodiments of the present invention.

本発明の第１の実施例に係る基板液処理装置は、図１に示されるように、大きく、基板支持部１０、回転駆動部２０、処理液供給部３０、加熱部４０、処理液回収部５０及び水分供給部６０からなる。   As shown in FIG. 1, the substrate liquid processing apparatus according to the first embodiment of the present invention is largely divided into a substrate support unit 10, a rotation driving unit 20, a processing liquid supply unit 30, a heating unit 40, and a processing liquid recovery unit. 50 and a moisture supply unit 60.

基板支持部１０は、テーブル１１上部に基板Ｗを離隔して支持する。テーブル１１上部の外郭には複数個のチャックピン１２が設けられ、基板Ｗを内側で支持し、基板Ｗの処理面は上部に向かって支持される。この時、液処理するための基板だけでなく、ダミー基板を使用してもよい。   The substrate support unit 10 supports the substrate W at a distance above the table 11. A plurality of chuck pins 12 are provided on the outer surface of the upper portion of the table 11 to support the substrate W inside, and the processing surface of the substrate W is supported upward. At this time, not only a substrate for liquid processing but also a dummy substrate may be used.

回転駆動部２０は、テーブル１１下部の回転軸を駆動させ、テーブル１１を回転させる。   The rotation drive unit 20 drives the rotation shaft below the table 11 to rotate the table 11.

処理液供給部３０は、基板Ｗの上部面をエッチング、洗浄又は乾燥するための処理液を供給する１以上の処理液供給ノズル３１を備える。処理液供給ノズル３１は、基板Ｗの上部空間に設けられ、駆動手段により往復駆動してもよい。この時、処理液は、ＳＰＭ（硫酸と過酸化水素水の混合物）を用いてもよい。   The processing liquid supply unit 30 includes one or more processing liquid supply nozzles 31 that supply a processing liquid for etching, cleaning, or drying the upper surface of the substrate W. The processing liquid supply nozzle 31 may be provided in the upper space of the substrate W and may be driven to reciprocate by a driving unit. At this time, SPM (a mixture of sulfuric acid and hydrogen peroxide solution) may be used as the treatment liquid.

加熱部４０は、基板Ｗの液処理効率を向上させるために、基板Ｗの上部にヒーターを設けることができる。ヒーターは、駆動手段によりスイング形態に移動し、回転する基板Ｗを均一に加熱させる。図示されていないが、基板に処理液を供給する前、処理液の混合による発熱反応を利用するか、処理液を直接加熱することによって、高温の処理液を基板に直接供給する処理液方式を使用することができる。   The heating unit 40 can be provided with a heater above the substrate W in order to improve the liquid processing efficiency of the substrate W. The heater is moved to a swing form by the driving means and uniformly heats the rotating substrate W. Although not shown in the figure, a processing liquid method for supplying a high-temperature processing liquid directly to the substrate by using an exothermic reaction due to mixing of the processing liquids or by directly heating the processing liquid before supplying the processing liquid to the substrate. Can be used.

このような処理液加熱方式と前述したヒーター加熱方式は、単独又は複合的に使用できる。   Such a treatment liquid heating method and the heater heating method described above can be used alone or in combination.

処理液回収部５０は、テーブル１１の周りに設けられ、基板Ｗから排出される処理液を回収できるように上部が内側に突出された１以上のカップ５１、５２を備える。図示されていないが、基板の積載や、処理液の分離回収のために、回転軸又はカップは相対的に昇降するように設けられてもよい。   The processing liquid recovery unit 50 includes one or more cups 51 and 52 that are provided around the table 11 and have upper portions protruding inward so that the processing liquid discharged from the substrate W can be recovered. Although not shown, the rotary shaft or the cup may be provided so as to move up and down relatively for stacking the substrate and separating and collecting the processing liquid.

水分供給部６０は、基板Ｗの上部空間に処理液供給部３０と別個に設けられた水分供給ノズル６１を備え、水分供給ノズル６１は駆動手段によりスイング形態に往復駆動される。   The moisture supply unit 60 includes a moisture supply nozzle 61 provided separately from the processing liquid supply unit 30 in the upper space of the substrate W, and the moisture supply nozzle 61 is reciprocally driven in a swing form by a driving unit.

水分供給ノズル６１は、処理液が供給される基板Ｗの上部空間に水分を噴射して、処理液中、蒸発される水分量を補充することで、基板Ｗ処理面に作用する処理液の濃度を均一に維持させ、基板Ｗの処理効率を向上させることができる。一方、水分供給ノズル６１は、１以上のホール又はスリット形態で形成され、水分をミスト又は蒸気状態で噴射し、水分の供給効率を上げることができる。供給される水分は、ＤＩＷ（脱イオン水）を使用でき、８５℃〜９５℃の水分を供給することが好ましいが、常温より高く、沸点より低い温度であればよい。   The moisture supply nozzle 61 injects moisture into the upper space of the substrate W to which the processing liquid is supplied, and replenishes the amount of water evaporated in the processing liquid, so that the concentration of the processing liquid acting on the substrate W processing surface is increased. Can be maintained uniformly, and the processing efficiency of the substrate W can be improved. On the other hand, the water supply nozzle 61 is formed in the form of one or more holes or slits, and can inject water in a mist or vapor state to increase the water supply efficiency. As the water to be supplied, DIW (deionized water) can be used, and it is preferable to supply water at 85 ° C. to 95 ° C. However, it may be higher than normal temperature and lower than the boiling point.

ここで、‘ミスト状態’とは、ＤＩＷが気体と混合され、液滴状態で処理空間に噴射された状態を意味し、‘蒸気状態’とは、ＤＩＷが臨界温度より低い温度で気化された状態を意味する。   Here, the “mist state” means a state in which DIW is mixed with gas and injected into the processing space in a droplet state, and the “vapor state” means that the DIW is vaporized at a temperature lower than the critical temperature. Means state.

水分は、ＤＩＷを窒素のような不活性ガスと混合して噴射する２流体ノズルを介して供給するか、不活性ガスが溶解されたＤＩＷ噴射ノズルを介して供給してもよい。   Moisture may be supplied through a two-fluid nozzle that mixes and jets DIW with an inert gas such as nitrogen, or through a DIW jet nozzle in which the inert gas is dissolved.

前述のように、処理液供給部３０と水分供給部６０の噴射位置が異なっても、基板の回転によって処理液と水分は十分に混合される。   As described above, even if the spray positions of the processing liquid supply unit 30 and the water supply unit 60 are different, the processing liquid and the water are sufficiently mixed by the rotation of the substrate.

本発明の第２の実施例は、図２に示されるように、基板支持部１０、回転駆動部２０、処理液供給部３０及び処理液回収部５０の構造は、第１の実施例と同じであり、加熱部４０及び水分供給部６０の構造において差がある。   In the second embodiment of the present invention, as shown in FIG. 2, the structures of the substrate support section 10, the rotation drive section 20, the processing liquid supply section 30, and the processing liquid recovery section 50 are the same as those of the first embodiment. There is a difference in the structure of the heating unit 40 and the moisture supply unit 60.

加熱部４０は、基板Ｗの上部に設けられたヒーターを備える。ヒーターは、基板Ｗの領域と同じであるか、基板Ｗの領域より大きく形成され、基板Ｗの全体領域を均一に加熱させることができる。   The heating unit 40 includes a heater provided on the top of the substrate W. The heater is the same as or larger than the region of the substrate W, and can uniformly heat the entire region of the substrate W.

水分供給部６０は、基板Ｗの上部空間に水分供給ノズル６２を備え、水分供給ノズル６２は、駆動手段により処理液供給ノズル３２と共に往復駆動される。即ち、第１の実施例に係る処理液供給ノズル３１と水分供給ノズル６１は、それぞれ往復運動をするが、第２の実施例に係る処理液供給ノズル３２と水分供給ノズル６２は、一つの駆動手段により往復運動をするという差がある。この時処理液供給ノズル３２と水分供給ノズル６２の噴射口が、交互に形成され、処理液と水分の混合を容易にする。   The moisture supply unit 60 includes a moisture supply nozzle 62 in the upper space of the substrate W, and the moisture supply nozzle 62 is reciprocally driven together with the processing liquid supply nozzle 32 by a driving unit. That is, the processing liquid supply nozzle 31 and the water supply nozzle 61 according to the first embodiment reciprocate, respectively, while the processing liquid supply nozzle 32 and the water supply nozzle 62 according to the second embodiment are driven by one drive. There is a difference of reciprocating movement by means. At this time, the jets of the treatment liquid supply nozzle 32 and the moisture supply nozzle 62 are alternately formed to facilitate mixing of the treatment liquid and moisture.

本発明の第３の実施例は、図３に示されるように、基板支持部１０、回転駆動部２０、処理液供給部３０、加熱部４０及び処理液回収部５０の構造は第１の実施例と同じであり、水分供給部の構造において差がある。   In the third embodiment of the present invention, as shown in FIG. 3, the structure of the substrate support section 10, the rotation drive section 20, the processing liquid supply section 30, the heating section 40, and the processing liquid recovery section 50 is the first embodiment. It is the same as the example, and there is a difference in the structure of the moisture supply unit.

水分供給部は、処理液供給ノズル３３により処理液が供給される基板Ｗの上部空間に水分を供給するように、１以上の水分供給ノズル６３を備え、水分供給ノズル６３は、処理液回収部５０を構成するカップ５２に設けられる。   The moisture supply unit includes one or more moisture supply nozzles 63 so as to supply moisture to the upper space of the substrate W to which the treatment liquid is supplied by the treatment liquid supply nozzle 33. The moisture supply nozzle 63 is a treatment liquid recovery unit. 50 is provided in the cup 52 constituting the 50.

本発明の第４の実施例は、図４に示されるように、基板支持部１０、加熱部４０及び処理液回収部５０の構造は第２の実施例と同じであり、回転駆動部２０、処理液供給部、水分供給部の構造と基板Ｗの支持方向において差がある。   In the fourth embodiment of the present invention, as shown in FIG. 4, the structure of the substrate support unit 10, the heating unit 40, and the treatment liquid recovery unit 50 is the same as that of the second embodiment, and the rotation drive unit 20, There is a difference in the structure of the treatment liquid supply unit and the moisture supply unit and the support direction of the substrate W.

基板Ｗは、処理面が下部に向かって基板支持部１０に支持される。   The substrate W is supported by the substrate support unit 10 with the processing surface facing downward.

回転駆動部２０は、回転軸内部に基板Ｗを液処理するための処理液や冷却流体、不活性ガスなどを供給するための中空が形成されている。   The rotation drive unit 20 is formed with a hollow for supplying a processing liquid, a cooling fluid, an inert gas, and the like for liquid processing the substrate W inside the rotating shaft.

処理液供給部は、基板Ｗの下部面をエッチング、洗浄又は乾燥するための処理液を供給する１以上の処理液供給ノズル３４を備える。処理液供給ノズル３４は、テーブル１１の上部中央部分に設けられ、基板Ｗとテーブル１１と間の空間に処理液を供給できる。処理液は、回転駆動部２０の中空を介して供給される。   The processing liquid supply unit includes one or more processing liquid supply nozzles 34 that supply a processing liquid for etching, cleaning, or drying the lower surface of the substrate W. The processing liquid supply nozzle 34 is provided in the upper center portion of the table 11 and can supply the processing liquid to the space between the substrate W and the table 11. The processing liquid is supplied through the hollow of the rotation drive unit 20.

水分供給部は、処理液が供給される空間に水分を供給する１以上の水分供給ノズル６４を備える。水分供給ノズル６４は、テーブル１１の上部中央部分に設けられ、基板Ｗとテーブル１１と間の空間に処理液を供給できる。水分は、回転駆動部２０の中空を介して供給される。   The moisture supply unit includes one or more moisture supply nozzles 64 that supply moisture to a space to which the processing liquid is supplied. The moisture supply nozzle 64 is provided in the upper center portion of the table 11 and can supply the processing liquid to the space between the substrate W and the table 11. Moisture is supplied through the hollow of the rotary drive unit 20.

本発明の第５の実施例は、図５に示されるように、基板支持部１０、回転駆動部２０、処理液供給部、加熱部４０及び処理液回収部５０の構造は第４の実施例と同じであり、水分供給部の構造において差がある。   In the fifth embodiment of the present invention, as shown in FIG. 5, the structure of the substrate support section 10, the rotation drive section 20, the processing liquid supply section, the heating section 40, and the processing liquid recovery section 50 is the fourth embodiment. And there is a difference in the structure of the moisture supply unit.

水分供給部は、処理液供給ノズル３５により処理液が供給される基板Ｗとテーブル１１と間の空間に水分を供給するように１以上の水分供給ノズル６５を備え、水分供給ノズル６５は、処理液回収部５０を構成するカップ５１に設けられる。水分供給ノズル６５は、基板Ｗの水平面に対して０゜〜２０゜傾いて水分を噴射でき、２０゜を超えると、水分が基板Ｗ全体に十分に供給されなく、処理液中、蒸発される水分量を補充することができないので、基板Ｗ処理面に作用する処理液の濃度を均一に維持し難い問題があり得る。   The moisture supply unit includes one or more moisture supply nozzles 65 so as to supply moisture to the space between the substrate W to which the treatment liquid is supplied by the treatment liquid supply nozzle 35 and the table 11. It is provided in a cup 51 constituting the liquid recovery unit 50. The moisture supply nozzle 65 can inject moisture at an angle of 0 ° to 20 ° with respect to the horizontal plane of the substrate W. If the moisture supply nozzle 65 exceeds 20 °, the moisture is not sufficiently supplied to the entire substrate W and is evaporated in the processing liquid. Since the amount of moisture cannot be replenished, there may be a problem that it is difficult to maintain a uniform concentration of the processing liquid acting on the substrate W processing surface.

本発明の他の側面に該当する基板液処理方法は、基板Ｗを回転させながら基板Ｗ又は基板Ｗに提供される処理液の少なくとも一つを加熱し、基板Ｗの処理面に処理液を供給し、処理液が供給される空間に水分を供給し、基板Ｗの処理面を液処理する。   The substrate liquid processing method according to another aspect of the present invention heats at least one of the substrate W or the processing liquid provided to the substrate W while rotating the substrate W, and supplies the processing liquid to the processing surface of the substrate W. Then, moisture is supplied to the space to which the processing liquid is supplied, and the processing surface of the substrate W is liquid processed.

この時、処理液は処理面のエッチング工程又はＰＲストリップ工程に用いられる薬液であり、例えば、ＳＰＭ（硫酸と過酸化水素水の混合物）が用いられる。この時、基板Ｗの処理面に処理液と水分とを同時に供給することができる。   At this time, the processing liquid is a chemical liquid used in the etching process or PR strip process of the processing surface, and for example, SPM (mixture of sulfuric acid and hydrogen peroxide solution) is used. At this time, the processing liquid and moisture can be simultaneously supplied to the processing surface of the substrate W.

また、処理液を供給する時間と水分を供給する時間が少なくとも一部重なるようにすることができ、水分を断続的（intermittent）に供給することができる。   Further, the time for supplying the treatment liquid and the time for supplying the water can be at least partially overlapped, so that the water can be supplied intermittently.

このような水分供給を通じて、高温エッチング工程でも基板処理面と接触して、液処理する処理液の濃度を均一に維持させることによって、優れた選択比を得ることができる。   Through such moisture supply, an excellent selectivity can be obtained by maintaining a uniform concentration of the processing liquid to be liquid processed by contacting the substrate processing surface even in the high temperature etching process.

以上では、本発明の具体的な実施例を、図面を中心にして説明したが、本発明の権利範囲は、特許請求範囲に記載された技術的思想を中心にして、その変形物又は均等物にまで及ぼすことは自明であろう。   In the above, specific embodiments of the present invention have been described with reference to the drawings. However, the scope of the right of the present invention is based on the technical idea described in the claims and is a modification or equivalent thereof. It will be obvious that it affects

１０ 基板支持部
２０ 回転駆動部
３０ 処理液供給部
４０ 加熱部
５０ 処理液回収部
５１、５２ カップ
６０ 水分供給部。

DESCRIPTION OF SYMBOLS 10 Substrate support part 20 Rotation drive part 30 Process liquid supply part 40 Heating part 50 Process liquid collection | recovery part 51, 52 Cup 60 Water | moisture content supply part.

Claims (10)

テーブル上部に基板を離隔し、支持する基板支持部と、
前記テーブルを回転させる回転軸を駆動する回転駆動部と、
前記基板の処理面にエッチング工程又はＰＲ（フォトレジスト）ストリップ工程用の薬液を供給する処理液供給部と、
前記基板又は前記処理液の少なくとも一つを加熱する加熱部と、
前記テーブルの周りに設けられ、基板から排出される処理液を回収する処理液回収部と、
前記処理液が供給される空間に水分を供給する水分供給部を含み、
前記処理液回収部は、内側が突出された１以上のカップを備え、
前記水分供給部は、前記カップに設けられる１以上のノズルからなり、かつ、前記水分をミスト又は蒸気状態で噴射し、
前記処理液供給部と前記水分供給部は、前記処理面に前記処理液と前記水分とを同時に供給して蒸発する水分を補充することにより前記処理液の濃度を均一に維持するように構成されることを特徴とする基板液処理装置。 A substrate support unit for separating and supporting the substrate on the table top;
A rotation drive unit for driving a rotation shaft for rotating the table;
A processing liquid supply unit for supplying a chemical for an etching process or a PR (photoresist) strip process to the processing surface of the substrate;
A heating unit for heating at least one of the substrate or the treatment liquid;
A processing liquid recovery unit that is provided around the table and recovers the processing liquid discharged from the substrate;
Including a moisture supply unit for supplying moisture to the space to which the treatment liquid is supplied;
The treatment liquid recovery unit includes one or more cups whose inner sides protrude.
The moisture supply unit is composed of one or more nozzles provided in the cup , and sprays the moisture in a mist or vapor state,
The treatment liquid supply unit and the water supply unit are configured to maintain a uniform concentration of the treatment liquid by supplying the treatment liquid and the water simultaneously to the treatment surface and replenishing the evaporated water. substrate solution treatment and wherein the that. 前記水分供給部の水分を噴射する噴射口は、１以上のホール又はスリット形態で形成されたことを特徴とする請求項１に記載の基板液処理装置。   The substrate liquid processing apparatus according to claim 1, wherein an injection port for injecting moisture from the moisture supply unit is formed in the form of one or more holes or slits. 前記基板は、処理面が上部に向かって支持され、
前記処理液と前記水分は、前記基板の上部空間に供給されることを特徴とする請求項１に記載の基板液処理装置。 The substrate has a processing surface supported toward the top,
The substrate processing apparatus according to claim 1, wherein the processing liquid and the moisture are supplied to an upper space of the substrate. 前記基板は、処理面が下部に向かって支持され、
前記処理液と前記水分は、前記基板とテーブル間の空間に供給されることを特徴とする請求項１に記載の基板液処理装置。 The substrate has a processing surface supported toward the bottom,
The substrate processing apparatus according to claim 1, wherein the processing liquid and the moisture are supplied to a space between the substrate and the table. 前記水分供給部のノズルは、前記基板の水平面に対して水平又は２０゜以下に傾けて水分を噴射することを特徴とする請求項４に記載の基板液処理装置。 The nozzle water supply unit, the substrate solution processing apparatus according to claim 4, characterized in that to inject tilting the with water below the horizontal or 20 ° with respect to the horizontal plane of the substrate. 前記処理液は、ＳＰＭ（硫酸と過酸化水素水との混合物）であることを特徴とする請求項１に記載の基板液処理装置。   The substrate processing apparatus according to claim 1, wherein the processing liquid is SPM (a mixture of sulfuric acid and hydrogen peroxide solution). 前記水分は、ＤＩＷ（脱イオン水）を不活性ガスと混合して供給するか、ＤＩＷに不活性ガスを溶解させて供給することを特徴とする請求項１に記載の基板液処理装置。   2. The substrate liquid processing apparatus according to claim 1, wherein the moisture is supplied by mixing DIW (deionized water) with an inert gas or by dissolving the inert gas in DIW. 前記水分を、常温より高く、沸点より低い温度で供給することを特徴とする請求項７に記載の基板液処理装置。 The substrate liquid processing apparatus according to claim 7 , wherein the moisture is supplied at a temperature higher than normal temperature and lower than a boiling point. 基板を回転させながら処理面を液処理する請求項１の基板液処理装置を用いた基板液処理方法において、
前記基板又は前記基板に提供される処理液の少なくとも一つを加熱しながら、前記処理液が供給される空間に水分を供給することを特徴とする基板液処理方法。 In the substrate liquid processing method using the substrate liquid processing apparatus according to claim 1, wherein the processing surface is subjected to liquid processing while rotating the substrate.
A substrate liquid processing method comprising supplying moisture to a space to which the processing liquid is supplied while heating at least one of the substrate and the processing liquid provided to the substrate. 前記処理液を供給する時間と前記水分を供給する時間が少なくとも一部重なることを特徴とする請求項９に記載の基板液処理方法。 The substrate liquid processing method according to claim 9 , wherein a time for supplying the processing liquid and a time for supplying the moisture overlap at least partially.
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