JP2017092161A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method that efficiently freeze and clean without causing a frozen film and a cooling head to stick together.SOLUTION: A bottom face of a cooling head comes into contact with only a processing liquid film between two liquid films to be placed in a state of no contact with a water film. The water film is cooled through a processing liquid film and the temperature of the water film falls below its fusion point, so that the water film is frozen. In a primary embodiment in which the water film is cooled through the processing liquid film having been cooled, freezing and cleaning processing can be efficiently performed as compared with another embodiment in which a liquid film is cooled through cooled gas. Further, a cooling temperature of a bottom face of the cooling head is lower than the fusion point of water and higher than the fusion point of the processing liquid. Consequently, the processing liquid film is not frozen and only the water film is frozen in the state. Therefore, the cooling head can be freely and relatively movably without causing the bottom face of the cooling head and the frozen film to s tick together.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a substrate processing apparatus for removing foreign substances such as particles adhering to the surface of various substrates such as a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, and a substrate for optical disk, and the like. The present invention relates to a substrate processing method.

  Conventionally, a freeze cleaning technique is known as one of the processes for removing foreign matters such as particles adhering to a substrate surface. In this technique, the liquid film formed on the substrate surface is frozen, and the frozen film is removed to remove particles and the like from the substrate surface together with the frozen film.

  For example, in the technique described in Patent Document 1, after DIW (Deionized Water) as a cleaning liquid is supplied to the substrate surface to form a liquid film, a nozzle that discharges cooling gas is scanned in the vicinity of the substrate surface. Particles are removed from the substrate surface by freezing the film and supplying DIW again to remove the frozen film.

JP 2008-071875 A

  However, in general, gas has low thermal conductivity, and in the aspect of Patent Document 1 in which a liquid film is frozen using a cooling gas, the liquid film cannot be efficiently frozen. For this reason, there are problems that it takes a long time to freeze the liquid film and that a large amount of gas is consumed to freeze the liquid film.

  Further, in the aspect in which the cooling head that circulates the refrigerant in the inside thereof is brought into direct contact with the liquid film, the liquid film can be efficiently frozen, but the freezing film and the cooling head stick to each other and the cooling head is liquidated. A new problem has arisen that it cannot move relative to the membrane.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method for efficiently freezing and cleaning without attaching a frozen film and a cooling head.

  A substrate processing apparatus according to a first aspect of the present invention includes a substrate holding unit that holds a substrate in a horizontal posture, and a water supply unit that supplies water toward the upper surface of the substrate held by the substrate holding unit. A processing liquid supply unit that supplies a processing liquid that is insoluble in water, has a specific gravity smaller than water, and a melting point lower than that of water toward the upper surface of the substrate held by the substrate holding unit; and the substrate holding A cooling head that has a bottom surface facing the top surface of the substrate held by the unit and is cooled so that the temperature of the bottom surface is lower than the melting point of water and higher than the melting point of the treatment liquid, and cooling that moves the cooling head A head moving unit, supplying water and the processing liquid toward the upper surface of the substrate held by the substrate holding unit to form a water film on the upper surface of the substrate, and processing liquid on the upper surface of the water film After the film is formed, move the cooling head It was in the treatment liquid film without contact to the water layer the bottom surface and wherein the contacting.

  A substrate processing apparatus according to a second aspect of the present invention is the substrate processing apparatus according to the first aspect of the present invention, wherein the water film is formed on the entire upper surface of the substrate, and the processing The liquid film is formed on the entire top surface of the water film, the bottom surface of the cooling head is smaller than the top surface of the substrate, and the cooling head moving unit contacts the bottom surface with the water film. The cooling head is moved along the horizontal direction in a state in which it is in contact with the processing liquid film.

  A substrate processing apparatus according to a third aspect of the present invention is the substrate processing apparatus according to the first aspect of the present invention, wherein the water film is formed on the entire upper surface of the substrate, and the processing The liquid film is formed on a part of the upper surface of the water film, the bottom surface of the cooling head is smaller than the upper surface of the substrate, and the cooling head moving unit uses the bottom surface as the water film. The cooling head is moved along a horizontal direction in a state where it is in contact with the treatment liquid film without being in contact therewith.

  A substrate processing apparatus according to a fourth aspect of the present invention is the substrate processing apparatus according to the first aspect of the present invention, wherein the water film is formed on the entire upper surface of the substrate, and the processing The liquid film is formed on the entire upper surface of the water film, the bottom surface of the cooling head is the same as or larger than the upper surface of the substrate, and the cooling head moving unit is The head is moved so that the bottom surface is not brought into contact with the water film but is brought into contact with the entire treatment liquid film.

  A substrate processing apparatus according to a fifth aspect of the present invention is the substrate processing apparatus according to any one of the first to fourth aspects of the present invention, wherein the substrate held by the substrate holding portion is vertically aligned. A rotating unit that rotates about an axis, wherein the rotating unit rotates the substrate in a state where the bottom surface of the cooling head is not in contact with the water film and is in contact with the treatment liquid film. To do.

  A substrate processing apparatus according to a sixth aspect of the present invention is the substrate processing apparatus according to any one of the first to fifth aspects of the present invention, wherein the processing liquid supply unit is held by the substrate holding unit. The treatment liquid is sprayed toward an upper surface of the substrate.

  A substrate processing method according to a seventh aspect of the present invention includes a substrate holding step of holding a substrate in a horizontal posture, a water supply step of supplying water toward the upper surface of the held substrate, and the held A treatment liquid supply step for supplying a treatment liquid that is insoluble in water and has a specific gravity smaller than water and a melting point lower than that of water toward the upper surface of the substrate, and a bottom surface facing the upper surface of the held substrate. And a cooling head moving step for moving a cooling head that is cooled so that the temperature of the bottom surface is lower than the melting point of water and higher than the melting point of the treatment liquid, and the substrate is formed by the water supply step and the treatment liquid supply step. After the water film is formed on the top surface of the water film and the treatment liquid film is formed on the top surface of the water film, the cooling head is moved in the cooling head moving step so that the bottom surface does not contact the water film. Contact the membrane The features.

  In the first to seventh aspects of the present invention, during the freeze cleaning process, the bottom surface of the cooling head is in contact with only the treatment liquid film of the two liquid films and is not in contact with the water film. . Then, the water film is cooled through the treatment liquid film, so that the temperature of the water film becomes equal to or lower than its melting point, and the water film freezes. In the aspect of the present invention in which the water film is cooled through the treatment liquid film (liquid) thus cooled, another aspect in which the liquid film is cooled through the cooled gas (gas) (for example, Patent Document 1). In comparison with (), the freezing and washing treatment can be performed efficiently.

  In the aspect of the present invention, the cooling temperature of the bottom surface of the cooling head is set to a temperature lower than the melting point of water and higher than the melting point of the treatment liquid. For this reason, in the said state, a process liquid film | membrane is not frozen and only a water film freezes. Therefore, the bottom surface of the cooling head and the frozen film do not stick, and the cooling head can be freely moved relative to the substrate and the frozen film formed on the substrate.

It is a figure which shows schematic structure of a substrate processing apparatus. It is a flowchart which shows an example of the washing | cleaning process in a substrate processing apparatus. It is a typical side view explaining operation | movement of a freeze washing process. It is a typical side view explaining operation | movement of a freeze washing process. It is a typical side view explaining operation | movement of a freeze washing process. It is a typical side view explaining the operation | movement of the freeze washing process in 2nd Embodiment. It is a typical side view explaining the operation | movement of the freeze washing process in 3rd Embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, parts having similar configurations and functions are denoted by the same reference numerals, and redundant description is omitted. In addition, the following embodiment is an example which actualized this invention, and is not an example which limits the technical scope of this invention. In the drawings, the size and number of each part may be exaggerated or simplified for easy understanding.

<1 First Embodiment>
<1.1 Overall Configuration of Substrate Processing Apparatus 1>
FIG. 1 is a diagram showing a schematic configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 is an apparatus for performing a cleaning process on an upper surface S1 of a substrate W such as a semiconductor wafer and removing foreign matters such as particles adhering to the upper surface S1.

  The substrate processing apparatus 1 includes a spin chuck 3 that rotatably holds a substrate W in a horizontal position in a processing chamber, and an SC1 liquid (ammonia-hydrogen peroxide mixture) toward an upper surface S1 of the substrate W held by the spin chuck 3. SC1 liquid supply unit 40 for supplying (a mixture of ammonia and hydrogen peroxide), a water supply unit 50 for supplying water toward the upper surface S1 of the substrate W held on the spin chuck 3, and held on the spin chuck 3. The processing liquid supply unit 60 that supplies the processing liquid toward the upper surface S1 of the substrate W, the cooling unit 70 that cools the upper surface S1 of the substrate W held by the spin chuck 3, and the control unit that controls each unit in the apparatus 19.

  Here, the treatment liquid is a liquid that is insoluble in water, has a specific gravity smaller than that of water, and a melting point lower than that of water. Below, the case where xylene (melting | fusing point-25 degreeC, specific gravity 0.88, the solubility in water 178 mg / L) is utilized as a process liquid is demonstrated.

  The spin chuck 3 includes a motor 6, a spin shaft 7 integrated with a drive shaft of the motor 6, a disc-shaped spin base 8 attached substantially horizontally to the upper end of the spin shaft 7, and a spin base 8. And a plurality of clamping members 9 provided at substantially equal angular intervals at a plurality of locations on the peripheral edge.

  The plurality of clamping members 9 are members that are driven in conjunction with a link mechanism (not shown) housed in the spin base 8. For this reason, by driving the link mechanism, the state of holding the substrate W in a horizontal posture and the state of releasing the holding of the substrate W can be switched.

  When the motor 6 is driven in a state where the substrate W is held in a horizontal posture by the plurality of holding members 9, the spin base 8 and the substrate W held by the spin base 8 are rotated around the rotation axis C in the vertical direction by the driving force. To be rotated. As described above, the spin chuck 3 has a function as a substrate holding unit that holds the substrate W in a horizontal posture and a function as a rotating unit that rotates the held substrate W around the rotation axis C. The mode of holding the substrate W in the spin chuck 3 is not limited to the sandwiching type described above, and for example, a vacuum suction type of holding the substrate W by vacuum suction of the lower surface of the substrate W. It doesn't matter.

  The cooling unit 70 includes a support shaft 71 extending in the vertical direction on the side of the spin chuck 3, an arm 72 coupled to the upper end of the support shaft 71 and extending in the horizontal direction, and a cooling head 73 attached to the tip of the arm 72, The refrigerant supply unit 75 supplies refrigerant to the refrigerant path 74 that circulates through the cooling head 73, and the cooling head moving unit 76 that moves the cooling head 73. Further, a valve for switching opening and closing of the refrigerant path 74 is inserted in the middle of the refrigerant path 74.

  The cooling head 73 is formed substantially horizontally and has a circular bottom surface S2 that is smaller than the top surface S1 of the substrate W in a horizontal plan view. Further, inside the cooling head 73, a refrigerant path 74 is formed along the horizontal direction in the vicinity of the bottom surface S2. Therefore, the bottom surface S2 of the cooling head 73 is cooled by the refrigerant supply unit 75 pumping the refrigerant to the refrigerant path 74. When the cooling head 73 is positioned above the spin chuck 3, the portion of the upper surface S 1 of the substrate W held by the spin chuck 3 that faces the bottom surface S 2 of the cooling head 73 is also cooled. The cooling temperature of the bottom surface S2 is a temperature lower than the melting point of water and higher than the melting point of the treatment liquid (for example, −15 ° C.).

  The cooling head moving unit 76 is a mechanism that moves the cooling head 73 in the horizontal direction and the vertical direction. For example, a rotation mechanism that rotates the support shaft 71 around the vertical axis and a vertical movement of the support shaft 71. And a lifting mechanism.

  When the support shaft 71 is rotated around a vertical axis within a predetermined angle range, the arm 72 is swung with the support shaft 71 as a fulcrum. Due to the swing of the arm 72, the cooling head 73 attached to the tip of the arm 72 is retracted at a processing position located immediately above the substrate W held by the spin chuck 3 and at the side of the spin chuck 3. It is moved between the positions along an arcuate trajectory.

  When the support shaft 71 is moved up and down, the cooling head 73 attached to the tip of the arm 72 is positioned close to the upper surface S1 of the substrate W held by the spin chuck 3 and the upper surface S1 of the substrate W. It moves up and down between the separated positions separated from the.

  The SC1 liquid supply unit 40 is attached to a support shaft (not shown) extending in the vertical direction on the side of the spin chuck 3, an arm 42 coupled to the upper end portion of the support shaft and extending in the horizontal direction, and the tip of the arm 42. It has a discharge nozzle 43, a SC1 liquid supply source 45 that supplies SC1 liquid to a liquid supply path 44 that passes through the discharge nozzle 43, and a nozzle moving unit 46 that moves the discharge nozzle 43. Further, a valve for switching between opening and closing of the liquid feeding path 44 is inserted in the middle of the liquid feeding path 44.

  The discharge nozzle 43 is, for example, a straight nozzle that discharges the SC1 liquid downward in a continuous flow state. The nozzle moving unit 46 has the same configuration as the cooling head moving unit 76, and moves the discharge nozzle 43 in the horizontal direction and the vertical direction.

  For this reason, at the processing position where the discharge nozzle 43 is positioned immediately above the substrate W held on the spin chuck 3, the SC1 liquid is fed from the SC1 liquid supply source 45 by opening the valve, and held on the spin chuck 3. The SC1 liquid is supplied to the upper surface S1 of the substrate W thus formed.

  The water supply unit 50 has a support shaft (not shown) extending in the vertical direction on the side of the spin chuck 3, an arm 52 coupled to the upper end of the support shaft and extending in the horizontal direction, and a discharge attached to the tip of the arm 52. The nozzle 53 includes DIW supply sources 55 to 57 that supply DIW to a liquid feeding path 54 that passes through the discharge nozzle 53, and a nozzle moving unit 58 that moves the discharge nozzle 53. Further, three valves for switching the supply from the DIW supply sources 55 to 57 are inserted in the middle of the liquid supply path 54.

  The discharge nozzle 53 is, for example, a straight nozzle that discharges DIW downward in a continuous flow state. The nozzle moving unit 58 has the same configuration as the cooling head moving unit 76, and moves the discharge nozzle 53 in the horizontal direction and the vertical direction.

  Further, the DIW supply source 55 is a supply source for supplying normal temperature DIW, the DIW supply source 56 is a supply source for supplying cooled DIW, and the DIW supply source 57 is for supplying heated DIW. Is the source.

  For this reason, at the processing position where the discharge nozzle 53 is located immediately above the substrate W held by the spin chuck 3, the opening and closing of the valve is controlled and DIW is fed from the DIW supply sources 55 to 57, whereby the spin chuck The DIW of each temperature is supplied to the upper surface S1 of the substrate W held on the substrate 3.

  The processing liquid supply unit 60 is attached to a support shaft (not shown) that extends in the vertical direction on the side of the spin chuck 3, an arm 62 that is coupled to the upper end of the support shaft and extends in the horizontal direction, and a tip of the arm 62. It has a discharge nozzle 63, a treatment liquid supply source 65 that supplies a treatment liquid to a liquid feed path 64 that passes through the discharge nozzle 63, and a nozzle moving unit 66 that moves the discharge nozzle 63. Further, a valve for switching opening and closing of the liquid supply path 64 is inserted in the middle of the liquid supply path 64.

  The discharge nozzle 63 is, for example, a straight nozzle that discharges the processing liquid downward in a continuous flow state. The nozzle moving unit 66 has the same configuration as the cooling head moving unit 76, and moves the discharge nozzle 63 in the horizontal direction and the vertical direction.

  For this reason, at the processing position where the discharge nozzle 63 is positioned immediately above the substrate W held by the spin chuck 3, the processing liquid is supplied from the processing liquid supply source 65 by opening the valve, and is held by the spin chuck 3. The processing liquid is supplied toward the upper surface S1 of the substrate W thus formed.

  The hardware configuration of the control unit 19 can be the same as that of a general computer. That is, the control unit 19 stores, for example, a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, control software, data, and the like. It has a magnetic disk to keep. In the control unit 19, various functional units that control each unit of the substrate processing apparatus 1 are realized by the CPU as the main control unit performing arithmetic processing according to the procedure described in the program. However, some or all of the functional units implemented in the control unit 19 may be implemented by hardware using a dedicated logic circuit or the like.

  In addition, the substrate processing apparatus 1 includes an input unit configured to include a mouse, a keyboard, a touch panel, and the like. For this reason, the operator of the apparatus can input information related to substrate processing using the input unit.

<1.2 Cleaning process>
FIG. 2 is a flowchart showing an example of the cleaning process in the substrate processing apparatus 1. 3 to 5 are schematic side views for explaining the operation of the freeze cleaning process.

  First, a transfer robot (not shown) is controlled, and a substrate W to be cleaned is carried into the processing chamber. The substrate W is held by the spin chuck 3 so that the surface to be cleaned becomes the upper surface S1 (substrate holding step). At this time, the discharge nozzles 43, 53, 63 and the cooling head 73 are arranged at the retracted position so as not to hinder the loading of the substrate W.

  When the substrate W is held on the spin chuck 3, the control unit 19 controls the motor 6 to start the rotation of the substrate W. The rotation speed of the substrate W is increased to a predetermined rotation speed (for example, 800 rpm), and then maintained at the rotation speed.

  Then, the SC1 process is executed. The control unit 19 controls the nozzle moving unit 46 to move the discharge nozzle 43 to the processing position, and opens the valve to supply the SC1 liquid from the discharge nozzle 43 to the upper surface S1 of the substrate W (step ST1).

  In addition, the control unit 19 controls the nozzle moving unit 46 to swing the arm 42 within a predetermined angle range, so that the discharge nozzle 43 is reciprocated between the rotation axis C and the peripheral portion of the substrate W. Let As a result, the SC1 liquid is uniformly supplied over the entire upper surface S1 of the rotating substrate W, and foreign substances such as residues and particles attached to the upper surface S1 of the substrate W are removed by the chemical ability of the SC1 liquid.

  When the SC1 process is executed for a predetermined time (for example, 8 seconds), the control unit 19 closes the valve to stop the supply of the SC1 liquid from the discharge nozzle 43, and controls the nozzle moving unit 46 to control the discharge nozzle 43. Move to the retracted position. Thereafter, a rinsing process is executed.

  The control unit 19 controls the nozzle moving unit 58 to move the discharge nozzle 53 to the processing position, and opens the valve on the path connected to the DIW supply source 55 to supply room temperature DIW from the discharge nozzle 53 to the upper surface S1 of the substrate W. (Step ST2).

  Further, the control unit 19 controls the nozzle moving unit 58 to swing the arm 52 within a predetermined angle range, so that the discharge nozzle 53 is reciprocated between the rotation axis C and the peripheral edge of the substrate W. Let As a result, room-temperature DIW is uniformly supplied over the entire upper surface S1 of the rotating substrate W, and foreign matters (such as SC1 liquid) remaining on the upper surface S1 of the substrate W are washed away by the DIW.

  When the rinsing process is executed for a predetermined time (for example, 24 seconds), the control unit 19 closes the valve and stops the supply of DIW from the discharge nozzle 53. Thereafter, a freeze cleaning process (steps ST3 to ST5) is performed.

  In the process of the freeze cleaning process, the rotational speed of the substrate W is lowered to a predetermined rotational speed (for example, 10 rpm) for the purpose of forming the water film 21 and the processing liquid film 22 on the upper surface S1 of the substrate W, and the rotational speed is increased. Maintained.

  The control unit 19 controls the nozzle moving unit 58 to move the discharge nozzle 53 on the rotation axis C. Then, the control unit 19 opens the valve connected to the DIW supply source 56 and supplies the DIW cooled from the discharge nozzle 53 located at the processing position toward the upper surface S1 of the substrate W (step ST3: water supply). Process). As a result, the DIW that has landed on the upper surface S1 of the substrate W receives the centrifugal force accompanying the low-speed rotation and spreads gently, and a cooled water film 21 is formed on the entire upper surface S1 (FIG. 3).

  When the supply of cooled DIW is executed for a predetermined time (for example, 6 seconds), the control unit 19 closes the valve and stops the supply of DIW from the discharge nozzle 53. Thereafter, the substrate W is rotated at the same rotational speed for a predetermined time (for example, 2 seconds), and the film thickness of the water film 21 formed on the upper surface S1 of the substrate W is leveled. Thereafter, the control unit 19 controls the nozzle moving unit 58 to move the discharge nozzle 53 to the retracted position.

  The control unit 19 controls the nozzle moving unit 66 to move the discharge nozzle 63 on the rotation axis C. Then, the control unit 19 opens the valve and supplies the processing liquid from the discharge nozzle 63 toward the upper surface S1 of the substrate W (step ST4: processing liquid supply process). As described above, since the treatment liquid is insoluble in water and has a specific gravity smaller than that of water, the treatment liquid that has landed on the water film 21 is gently expanded by receiving centrifugal force associated with low-speed rotation. A treatment liquid film 22 is formed on the entire top surface of the film 21 (FIG. 4).

  When the supply of the processing liquid is executed for a predetermined time (for example, 6 seconds), the control unit 19 closes the valve and stops the supply of the processing liquid from the discharge nozzle 63. Thereafter, the substrate W is rotated at the same rotation speed for a predetermined time (for example, 2 seconds), and the film thickness of the water film 21 formed on the upper surface S1 of the substrate W and the treatment liquid film 22 formed on the water film 21 are the same. Leveled. Thereafter, the control unit 19 controls the nozzle moving unit 66 to move the discharge nozzle 63 to the retracted position.

  The control unit 19 controls the cooling head moving unit 76 to move the cooling head 73 to the processing position, opens the valve, and circulates the refrigerant in the refrigerant path 74. Thus, the cooling head 73 having the bottom surface S2 cooled is lowered to a close position close to the top surface S1 of the substrate W, and the bottom surface S2 of the cooling head 73 is not in contact with the water film 21 but in contact with the processing liquid film 22. (Step ST5: Cooling head moving step). Hereinafter, a state in which the cooling head 73 is in contact with only the treatment liquid film 22 in the double liquid film is referred to as a “limited contact state”. FIG. 5 shows this limited contact state.

  As described above, the cooling temperature of the bottom surface S2 of the cooling head 73 is set to a temperature lower than the melting point of water and higher than the melting point of the treatment liquid (for example, −15 ° C.). For this reason, in the limited contact state, the treatment liquid film 22 is not frozen, and a portion of the water film 21 that is close to the bottom surface S2 is frozen.

  When the water film 21 is frozen, the volume of water that has entered between the upper surface S1 of the substrate W and the foreign matter adhering to the upper surface S1 increases, and the foreign matter is separated from the upper surface S1 by a minute distance. As a result, in the region where the water film 21 is frozen, the adhesion force between the upper surface S1 of the substrate W and the foreign matter is reduced, and further, the foreign matter is detached from the upper surface S1.

  Further, the control unit 19 controls the cooling head moving unit 76 to horizontally move the cooling head 73 while maintaining the limited contact state. More specifically, the control unit 19 swings the arm 72 within a predetermined angle range and reciprocates the cooling head 73 between the rotation axis C and the peripheral edge of the substrate W in a limited contact state. . As a result, the entire upper surface S1 of the rotating substrate W is scanned by the bottom surface S2 of the cooling head 73, and the entire water film 21 on the upper surface S1 of the substrate W is frozen. As a result, the adhesion force of the foreign matter is reduced over the entire upper surface S1 of the substrate W, and the foreign matter is further detached from the upper surface S1.

  When the scanning of the cooling head 73 is executed for a predetermined time (for example, 60 seconds), the control unit 19 closes the valve and stops the circulation of the refrigerant. Further, the control unit 19 controls the cooling head moving unit 76 to move the cooling head 73 to the retracted position. Thereafter, the rotation speed of the substrate W is increased to a predetermined rotation speed (for example, 2000 rpm) and maintained at the rotation speed.

  The control unit 19 controls the nozzle moving unit 58 to move the discharge nozzle 53 to the processing position, opens a valve on the path connected to the DIW supply source 57, and is heated from the discharge nozzle 53 (for example, DIW of 70 ° C.). ) Is supplied to the upper surface S1 of the substrate W (step ST6).

  Further, the control unit 19 controls the nozzle moving unit 58 to swing the arm 52 within a predetermined angle range, so that the discharge nozzle 53 is reciprocated between the rotation axis C and the peripheral edge of the substrate W. Let As a result, the high-temperature DIW is uniformly supplied over the entire upper surface S1 of the rotating substrate W, the frozen film formed on the upper surface S1 of the substrate W is melted, and the processing liquid, water, and foreign matter on the upper surface S1 of the substrate W are melted. Etc. are washed away by DIW. At this time, since the foreign matter is in a state where the adhesion force to the upper surface S1 of the substrate W is reduced or detached from the upper surface S1, the foreign matter can be removed from the upper surface S1 by melting the frozen film and washing away from the upper surface S1 of the substrate W. It can be easily removed from the upper surface S1.

  When the supply of heated DIW is executed for a predetermined time (for example, 2 seconds), the control unit 19 closes the valve and stops the supply of DIW from the discharge nozzle 53. Thereafter, the control unit 19 controls the nozzle moving unit 58 to move the discharge nozzle 53 to the retracted position. Thereafter, the substrate W is rotated at the same rotational speed for a predetermined time (for example, 10 seconds), each liquid and foreign matter adhering to the upper surface S1 of the substrate W is shaken off and the substrate W is dried (step ST7). .

  When the shake-off drying is completed, the control unit 19 drives the motor 6 to stop the rotation of the spin chuck 3. Thus, the cleaning process for one substrate W is completed, and the processed substrate W is unloaded from the processing chamber by a transfer robot (not shown).

<1.3 Effect>
In the present embodiment, during the freeze cleaning process, the bottom surface S2 of the cooling head 73 is in a limited contact state in which it only contacts the processing liquid film 22 and does not contact the water film 21. Then, the water film 21 is cooled through the treatment liquid film 22, so that the temperature of the water film 21 becomes equal to or lower than its melting point, and the water film 21 is frozen. In general, liquid has higher thermal conductivity than gas. For this reason, in the aspect of the present embodiment in which the water film 21 is cooled via the cooled treatment liquid film 22 (liquid), other aspects (for example, cooling the liquid film via the cooled gas (gas)) (for example, Compared with Patent Document 1), the freeze cleaning process can be performed more efficiently.

  In the present embodiment, the cooling temperature of the bottom surface S2 of the cooling head 73 is set to a temperature (for example, −15 ° C.) that is lower than the melting point of water and higher than the melting point of the treatment liquid. For this reason, in the limited contact state, the treatment liquid film 22 is not frozen, and only the water film 21 is frozen. Therefore, the bottom surface S2 of the cooling head 73 and the frozen film do not stick, and the frozen film sticks only to the top surface S1 of the substrate W. On the other hand, in other modes in which the cooling temperature of the bottom surface S2 of the cooling head 73 is lower than the melting point of the processing liquid, or in other modes in which the bottom surface S2 of the cooling head 73 also contacts the water film 21, The bottom surface S2 of the cooling head 73 and the top surface S1 of the substrate W stick to each other through the film. In the aspect of this embodiment, unlike these other aspects, the cooling head 73 does not stick to the frozen film, so that the cooling head 73 can be moved freely.

  In the present embodiment, the cooled DIW is supplied to the upper surface S <b> 1 of the substrate W to form the water film 21. For this reason, in the aspect of the present embodiment, the cooling time by the cooling head 73 (the water film 21 is frozen) is different from other aspects in which room temperature DIW is supplied to the upper surface S1 of the substrate W to form a water film. Time).

<2 Second Embodiment>
FIG. 6 is a schematic side view for explaining the operation of the freeze cleaning process. Below, although the substrate processing apparatus of 2nd Embodiment is demonstrated, the same code | symbol is attached | subjected about the same element as the substrate processing apparatus 1 of 1st Embodiment, and duplication description is abbreviate | omitted.

  The configuration of the substrate processing apparatus of the second embodiment is the same as that of the first embodiment, and the only difference is the size of the processing liquid film formed by the freeze cleaning process. The water film 21 is formed on the entire upper surface S1 of the substrate W, as in the case of the first embodiment. Unlike the treatment liquid film 22 of the first embodiment, the treatment liquid film 220 of the second embodiment is formed on a part of the upper surface of the water film 21. Further, the bottom surface S2 of the cooling head 73 is smaller than the top surface S1 of the substrate W as in the case of the first embodiment.

  During the freeze cleaning process, the control unit 19 circulates the refrigerant in the refrigerant path 74 to cool the cooling head 73, and then controls the cooling head moving unit 76 to control the cooling head 73 while maintaining the limited contact state. Move horizontally. More specifically, the control unit 19 swings the arm 72 within a predetermined angle range and reciprocates the cooling head 73 between the rotation axis C and the peripheral edge of the substrate W in a limited contact state. . During this reciprocating movement, the processing liquid film 220 follows the horizontal movement of the cooling head 73 by the surface tension of the processing liquid film 220, and the limited contact state is maintained. Then, the entire upper surface S1 of the rotating substrate W is scanned by the bottom surface S2 of the cooling head 73, and the entire water film 21 on the upper surface S1 of the substrate W is frozen. As a result, the adhesion force of the foreign matter is reduced over the entire upper surface S1 of the substrate W, and further, the foreign matter is detached from the upper surface S1.

  In the aspect of the second embodiment, the amount of processing liquid used can be reduced compared to the aspect of the first embodiment. However, in the aspect of the second embodiment, each processing condition (processing liquid material, moving speed of the cooling head 73, rotation speed of the substrate W, etc.) is set so that the processing liquid film 220 follows the horizontal movement of the cooling head 73. It is necessary to consider.

<3 Third Embodiment>
FIG. 7 is a schematic side view for explaining the operation of the freeze cleaning process. Hereinafter, the substrate processing apparatus according to the third embodiment will be described. However, the same elements as those of the substrate processing apparatus 1 according to the first embodiment are denoted by the same reference numerals, and redundant description will be omitted.

  Unlike the first embodiment, the bottom surface S20 of the cooling head 730 of the third embodiment is larger than the upper surface S1 of the substrate W. The water film 21 is formed on the entire upper surface S1 of the substrate W, as in the case of the first embodiment. The treatment liquid film 22 is also formed on the entire upper surface of the water film 21 as in the case of the first embodiment.

  During the freeze cleaning process, the control unit 19 circulates the refrigerant in the refrigerant path 740 to cool the cooling head 730 and then controls the cooling head moving unit to lower the cooling head 730 from above the substrate W. Since the bottom surface S20 of the cooling head 730 is larger than the top surface S1 of the substrate W, in the third embodiment, the entire processing liquid film 22 is cooled by the cooling head 730 in the limited contact state. Then, the entire water film 21 is cooled and frozen through the treatment liquid film 22. As a result, the adhesion force of the foreign matter is reduced over the entire upper surface S1 of the substrate W, and further, the foreign matter is detached from the upper surface S1.

  In the aspect of the third embodiment, it is not necessary to swing the arm 720 during the freeze cleaning process, and the freeze cleaning process can be executed with simpler control than in the first embodiment.

<4 Modification>
While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention.

  In the above-described embodiment, a mode in which room temperature DIW is used in the rinsing process has been described. However, the present invention is not limited to this. For example, carbonated water, hydrogen water, dilute ammonia (for example, about 1 ppm), dilute hydrochloric acid, or the like may be used as the rinse liquid.

  Moreover, although the said embodiment demonstrated the aspect which uses xylene as a process liquid, it is not restricted to this. The treatment liquid may be any liquid that is insoluble in water and has a specific gravity smaller than water and a melting point lower than that of water. For example, cyclohexanone (melting point −31 ° C., specific gravity 0.95, solubility in water 0.86 g. / L), butanol (melting point −90 ° C., specific gravity 0.81, water solubility 63.2 g / L), hexanol (melting point −44.6 ° C., specific gravity 0.82), water solubility 0.59 g / L ) Etc. can be used.

  Moreover, although the said embodiment demonstrated the aspect which performs a cleaning process, rotating the board | substrate W, it is not restricted to this. The freeze cleaning process may be executed by moving each nozzle or cooling head with respect to the substrate W that is not rotating. Further, when the entire water film can be frozen without moving the cooling head and the substrate W relative to each other as in the third embodiment, the freeze cleaning process may be executed without rotating the substrate W.

  Moreover, although the said embodiment demonstrated the aspect which supplies a process liquid from the discharge nozzle 63 toward the upper surface S1 of the board | substrate W by the continuous flow in the process liquid supply process, it is not restricted to this. A mode in which the processing liquid is supplied (sprayed) from the discharge nozzle 63 in the form of a mist toward the upper surface S1 of the substrate W may be employed. In this case, compared to the case where the processing liquid is supplied onto the water film 21 in a continuous flow, liquid splash is less likely to occur, and a more uniform processing liquid film 22 is formed.

  Moreover, although the said embodiment demonstrated the aspect by which a process liquid supply process is performed after a water supply process, the process order is not restricted to this. The treatment liquid film may be formed on the water film, and the water supply process may be executed after the treatment liquid supply process, or the water supply process and the treatment liquid supply process may be executed simultaneously.

  Although the substrate processing apparatus and the substrate processing method according to the embodiment and the modifications thereof have been described above, these are examples of the preferred embodiment of the present invention and do not limit the scope of implementation of the present invention. Within the scope of the invention, the present invention can be freely combined with each embodiment, modified with any component in each embodiment, or increased or decreased with any component in each embodiment.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 3 Spin chuck 19 Control part 40 SC1 liquid supply part 43 Discharge nozzle 50 Water supply part 53 Discharge nozzle 60 Treatment liquid supply part 63 Discharge nozzle 70 Cooling part 71 Support shaft 72 Arm 73 Cooling head 74 Refrigerant path 75 Refrigerant supply Unit 76 Cooling head moving unit S1 Top surface S2 Bottom surface W Substrate

Claims (7)

A substrate holder for holding the substrate in a horizontal position;
A water supply unit for supplying water toward the upper surface of the substrate held by the substrate holding unit;
A treatment liquid supply unit that supplies a treatment liquid that is insoluble in water and has a specific gravity smaller than water and a melting point lower than water, toward the upper surface of the substrate held by the substrate holding unit;
A cooling head having a bottom surface facing the upper surface of the substrate held by the substrate holding unit, and cooled so that the temperature of the bottom surface is lower than the melting point of water and higher than the melting point of the treatment liquid;
A cooling head moving unit for moving the cooling head;
With
After supplying water and the treatment liquid toward the upper surface of the substrate held by the substrate holding unit to form a water film on the upper surface of the substrate and forming a treatment liquid film on the upper surface of the water film, A substrate processing apparatus, wherein a cooling head is moved so that the bottom surface does not contact the water film but contacts the processing liquid film. The substrate processing apparatus according to claim 1,
The water film is formed on the entire top surface of the substrate;
The treatment liquid film is formed on the entire upper surface of the water film,
The bottom surface of the cooling head is smaller than the top surface of the substrate;
The substrate processing apparatus, wherein the cooling head moving unit moves the cooling head along a horizontal direction in a state where the bottom surface is not in contact with the water film but in contact with the processing liquid film. The substrate processing apparatus according to claim 1,
The water film is formed on the entire top surface of the substrate;
The treatment liquid film is formed on a part of the upper surface of the water film,
The bottom surface of the cooling head is smaller than the top surface of the substrate;
The substrate processing apparatus, wherein the cooling head moving unit moves the cooling head along a horizontal direction in a state where the bottom surface is not in contact with the water film but in contact with the processing liquid film. The substrate processing apparatus according to claim 1,
The water film is formed on the entire top surface of the substrate;
The treatment liquid film is formed on the entire upper surface of the water film,
The bottom surface of the cooling head is equal to or larger than the top surface of the substrate,
The substrate processing apparatus, wherein the cooling head moving unit moves the cooling head to bring the bottom surface into contact with the entire processing liquid film without contacting the water film. The substrate processing apparatus according to claim 1, wherein:
A rotating unit that rotates the substrate held by the substrate holding unit around a vertical axis;
With
The substrate processing apparatus, wherein the rotating unit rotates the substrate in a state where the bottom surface of the cooling head is not in contact with the water film but in contact with the processing liquid film. A substrate processing apparatus according to any one of claims 1 to 5,
The substrate processing apparatus, wherein the processing liquid supply unit sprays the processing liquid toward an upper surface of the substrate held by the substrate holding unit. A substrate holding step for holding the substrate in a horizontal position;
A water supply step of supplying water toward the upper surface of the held substrate;
A treatment liquid supply step for supplying a treatment liquid which is insoluble in water and has a specific gravity smaller than water and a melting point lower than water toward the upper surface of the substrate held;
A cooling head moving step of moving a cooling head having a bottom surface facing the upper surface of the held substrate and being cooled so that the temperature of the bottom surface is lower than the melting point of water and higher than the melting point of the treatment liquid;
With
After the water film is formed on the upper surface of the substrate and the processing liquid film is formed on the upper surface of the water film by the water supply process and the processing liquid supply process, the cooling head is moved in the cooling head moving process to move the cooling head. A substrate processing method, wherein a bottom surface is not brought into contact with the water film, but is brought into contact with the treatment liquid film.

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