JP6411571B2 - Substrate processing apparatus, substrate processing method, and computer-readable recording medium recording substrate processing program - Google Patents

Substrate processing apparatus, substrate processing method, and computer-readable recording medium recording substrate processing program Download PDF

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JP6411571B2
JP6411571B2 JP2017061138A JP2017061138A JP6411571B2 JP 6411571 B2 JP6411571 B2 JP 6411571B2 JP 2017061138 A JP2017061138 A JP 2017061138A JP 2017061138 A JP2017061138 A JP 2017061138A JP 6411571 B2 JP6411571 B2 JP 6411571B2
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和義 篠原
和義 篠原
祐希 吉田
祐希 吉田
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Tokyo Electron Ltd
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Description

本発明は、基板上の処理液を除去して基板の乾燥を行う基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体に関するものである。   The present invention relates to a substrate processing apparatus and a substrate processing method for removing a processing liquid on a substrate and drying the substrate, and a computer-readable recording medium on which a substrate processing program is recorded.

従来より、半導体部品やフラットパネルディスプレイなどを製造する際には、基板処理装置を用いて半導体ウエハや液晶基板などの基板に対して洗浄やエッチングなどの各種の液処理を施す。   Conventionally, when manufacturing a semiconductor component, a flat panel display, or the like, various liquid treatments such as cleaning and etching are performed on a substrate such as a semiconductor wafer or a liquid crystal substrate using a substrate processing apparatus.

たとえば、基板の洗浄を行う基板処理装置では、回転する基板に向けて洗浄用の薬液を供給し、基板の表面を薬液で洗浄処理する。その後、基板の中央部にリンス液を供給し、基板の表面をリンス液でリンス処理する。このリンス処理では、基板の表面をリンス処理するための処理液（たとえば、純水）を基板に供給して、基板の表面に処理液の液膜を形成させる。その後、処理液の供給を停止し、処理液よりも揮発性の高い乾燥用液（たとえば、ＩＰＡ（イソプロピルアルコール））を基板の中央部に供給して基板の表面に形成された処理液の液膜を乾燥用液に置換する置換処理を行う。この置換処理では、基板の中央部から外周側に向かって処理液が乾燥用液に置換され、基板の表面に乾燥用液の液膜が形成される。その後、乾燥用液に向けて不活性ガス（たとえば、窒素ガス）を吹き付けるとともに回転する基板による遠心力で乾燥用液を基板の表面から外側方へ振り切ることで、基板の表面を乾燥させる。   For example, in a substrate processing apparatus that cleans a substrate, a cleaning chemical is supplied toward a rotating substrate, and the surface of the substrate is cleaned with the chemical. Thereafter, a rinsing liquid is supplied to the central portion of the substrate, and the surface of the substrate is rinsed with the rinsing liquid. In this rinsing process, a processing liquid (for example, pure water) for rinsing the surface of the substrate is supplied to the substrate to form a liquid film of the processing liquid on the surface of the substrate. Thereafter, the supply of the processing liquid is stopped, and a drying liquid (for example, IPA (isopropyl alcohol)) having higher volatility than the processing liquid is supplied to the central portion of the substrate to form a processing liquid formed on the surface of the substrate. A replacement process is performed to replace the membrane with a drying solution. In this replacement process, the processing liquid is replaced with the drying liquid from the center of the substrate toward the outer periphery, and a liquid film of the drying liquid is formed on the surface of the substrate. Thereafter, an inert gas (for example, nitrogen gas) is blown toward the drying liquid, and the drying liquid is shaken off from the surface of the substrate by a centrifugal force by the rotating substrate, thereby drying the surface of the substrate.

このように従来の基板処理装置では、基板の乾燥を行う際に、基板の表面に処理液を供給して処理液の液膜を形成しておき、処理液の供給を停止した後に乾燥用液の供給を開始することで、基板の表面に形成された処理液の液膜を乾燥用液に置換していた（たとえば、特許文献１参照。）。   Thus, in the conventional substrate processing apparatus, when the substrate is dried, the processing liquid is supplied to the surface of the substrate to form a liquid film of the processing liquid, and after the supply of the processing liquid is stopped, the drying liquid As a result, the liquid film of the processing liquid formed on the surface of the substrate was replaced with the drying liquid (see, for example, Patent Document 1).

特開２０１０−４５３８９号公報JP 2010-45389 A

ところが、上記従来の基板処理装置では、基板の表面に処理液の液膜が形成された際に、処理液の液膜に基板の回転による遠心力が作用している。その遠心力は、基板の中央部よりも基板の外周側の方が大きい。そのため、処理液の供給から乾燥用液の供給に切換える際に基板の表面に乾燥用液の液膜が形成される前に基板の外周側に形成された処理液の液膜が基板の外側方へ振り切られて液膜が途切れた状態となる。特に、基板の表面が疎水化されている場合に顕著に現れる。   However, in the conventional substrate processing apparatus, when a liquid film of the processing liquid is formed on the surface of the substrate, a centrifugal force due to the rotation of the substrate acts on the liquid film of the processing liquid. The centrifugal force is larger on the outer peripheral side of the substrate than on the central portion of the substrate. Therefore, when switching from supplying the processing liquid to supplying the drying liquid, the liquid film of the processing liquid formed on the outer peripheral side of the substrate before the liquid film of the drying liquid is formed on the surface of the substrate The liquid film is interrupted. This is particularly noticeable when the surface of the substrate is hydrophobized.

そして、図１３に模式的に示すように、基板の内周側（一点鎖線で示す基板と同心円状（基板の中心から所定半径）の円形領域内）では、乾燥溶液の液膜が形成されるものの、基板の外周側では、乾燥用液の液膜が途切れてしまう。このように乾燥用液の液膜が途切れると乾燥用液の液滴が形成され、液滴に雰囲気中の物質（たとえば、アンモニア）が溶け込み、そのまま乾燥すると基板の表面にウォーターマークが発生したりパーティクルが残存するおそれがある。   Then, as schematically shown in FIG. 13, a liquid film of the dry solution is formed on the inner peripheral side of the substrate (in a circular region concentric with the substrate indicated by the alternate long and short dash line (within a predetermined radius from the center of the substrate)). However, the liquid film of the drying liquid is interrupted on the outer peripheral side of the substrate. In this way, when the liquid film of the drying liquid is interrupted, droplets of the drying liquid are formed, and a substance in the atmosphere (for example, ammonia) dissolves in the liquid droplets. Particles may remain.

このように、従来の基板処理装置では、置換液を供給する際に基板の表面全体において処理液の液膜を保持することができず、基板を良好に処理することができなかった。   Thus, in the conventional substrate processing apparatus, when supplying the replacement liquid, the liquid film of the processing liquid cannot be held on the entire surface of the substrate, and the substrate cannot be processed satisfactorily.

なお、置換液を供給する際に基板の回転速度を低くすることで遠心力を小さくして処理液の液膜を保持することも考えられるが、処理時間が長くなってしまい、基板処理装置のスループットが低減するなどの問題がある。   Although it is conceivable to reduce the centrifugal force by reducing the rotation speed of the substrate when supplying the replacement liquid, the liquid film of the processing liquid is held, but the processing time becomes long, and the substrate processing apparatus There are problems such as reduced throughput.

そこで、本発明では、基板処理装置において、基板を保持しながら回転させる基板回転部と、前記基板に処理液を供給する処理液供給部と、前記処理液供給部から供給された前記処理液と置換させる置換液を前記基板に供給する置換液供給部とを備え、前記置換液供給部から供給される置換液よりも前記基板の外周側に前記処理液供給部から前記処理液を補給して処理液の液膜を形成し、前記置換液供給部から前記置換液を供給する際に、前記置換液供給部から前記基板の中央部上方に向けて前記置換液を供給し、同時に、前記処理液供給部は、処理液を補給しない場合において置換液の液膜が基板と同心円状に形成される円形領域内に、前記基板の外周方向に向けて移動しながら前記処理液を供給することにした。
Therefore, in the present invention, in the substrate processing apparatus, a substrate rotating unit that rotates while holding the substrate, a processing liquid supply unit that supplies a processing liquid to the substrate, and the processing liquid supplied from the processing liquid supply unit, A replacement liquid supply unit that supplies the substrate with a replacement liquid to be replaced, and supplies the processing liquid from the processing liquid supply unit closer to the outer periphery of the substrate than the replacement liquid supplied from the replacement liquid supply unit. When forming the liquid film of the processing liquid and supplying the replacement liquid from the replacement liquid supply section, the replacement liquid is supplied from the replacement liquid supply section toward the upper center of the substrate, and at the same time, the processing liquid supply portion, a circular region where substitution liquid film is formed on a substrate and concentrically in the case without replenishment processing liquid to be supplied to the treatment liquid while moving toward the outer circumferential direction of the substrate did.

また、前記処理液供給部は、前記基板の周縁部で前記処理液の補給を停止することにした。   Further, the processing liquid supply unit stops supply of the processing liquid at the peripheral edge of the substrate.

また、前記処理液供給部は、前記置換液供給部から前記基板への前記置換液の供給を開始するよりも前に前記処理液の補給を開始することにした。   Further, the processing liquid supply unit starts supplying the processing liquid before starting the supply of the replacement liquid from the replacement liquid supply unit to the substrate.

また、基板処理方法において、回転する基板に処理液を供給する処理液供給工程と、前記基板に供給された前記処理液を置換するための置換液を基板に供給して置換液の液膜を形成する置換液供給工程と、前記基板に供給される前記置換液よりも前記基板の外周側に前記処理液を補給して処理液の液膜を形成する処理液補給工程とを有し、前記置換液供給工程では、前記基板の中央部上方に向けて前記置換液を供給し、前記処理液補給工程では、前記置換液供給工程と同時に、処理液を補給しない場合において置換液の液膜が基板と同心円状に形成される円形領域内に、前記基板の外周方向に向けて移動しながら前記処理液を供給することにした。
Further, in the substrate processing method, a processing liquid supply step of supplying a processing liquid to the rotating substrate, a replacement liquid for replacing the processing liquid supplied to the substrate is supplied to the substrate, and a liquid film of the replacement liquid is formed. A substitution liquid supply step to form, and a treatment liquid replenishment step to replenish the treatment liquid on the outer peripheral side of the substrate with respect to the substitution liquid supplied to the substrate to form a liquid film of the treatment liquid, In the replacement liquid supply process, the replacement liquid is supplied toward the upper part of the center of the substrate. In the treatment liquid supply process, the liquid film of the replacement liquid is formed simultaneously with the replacement liquid supply process when the treatment liquid is not supplied. The processing liquid is supplied while moving toward the outer peripheral direction of the substrate in a circular region formed concentrically with the substrate .

また、前記処理液補給工程は、前記置換液供給工程で前記基板への前記置換液の供給を開始するよりも前に前記処理液の補給を開始することにした。   In the processing liquid supply step, the supply of the processing liquid is started before the supply of the replacement liquid to the substrate is started in the replacement liquid supply step.

また、基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体において、基板を保持しながら回転させる基板回転部と、前記基板に処理液を供給する処理液供給部と、前記処理液供給部から供給された前記処理液と置換させる置換液を前記基板に供給する置換液供給部とを有する基板処理装置を用い、前記基板回転部によって前記基板を回転させ、前記処理液供給部によって前記基板に前記処理液を供給させ（処理液供給工程）、その後、前記置換液供給部によって前記基板に前記置換液を供給させて置換液の液膜を形成する（置換液供給工程）とともに、前記処理液供給部によって前記置換液よりも前記基板の外周側に前記処理液を補給させて処理液の液膜を形成し（処理液補給工程）、前記置換液供給工程では、前記基板の中央部上方に向けて前記置換液を供給し、前記処理液補給工程では、前記置換液供給工程と同時に、処理液を補給しない場合において置換液の液膜が基板と同心円状に形成される円形領域内に、前記基板の外周方向に向けて移動しながら前記処理液を供給することにした。 Further, in a computer-readable recording medium on which a substrate processing program is recorded, a substrate rotating unit that rotates while holding the substrate, a processing liquid supply unit that supplies a processing liquid to the substrate, and a processing liquid supply unit that are supplied from the processing liquid supply unit A substrate processing apparatus having a replacement liquid supply unit that supplies the substrate with a replacement liquid to be replaced with the processing liquid, rotating the substrate by the substrate rotation unit, and applying the processing to the substrate by the processing liquid supply unit. Then, a liquid is supplied (processing liquid supply process), and then the replacement liquid is supplied to the substrate by the replacement liquid supply section to form a liquid film of the replacement liquid (substitution liquid supply process), and the processing liquid supply section To replenish the processing liquid on the outer peripheral side of the substrate with respect to the replacement liquid to form a liquid film of the processing liquid (processing liquid replenishment process). In the replacement liquid supply process, Said replacement liquid supplying upward central portion, in the treatment liquid supply step, concurrently with said replacement liquid supplying step, circular substitution liquid film is formed on a substrate and concentrically in the case without replenishment processing liquid The processing liquid is supplied into the region while moving toward the outer peripheral direction of the substrate.

本発明では、基板処理装置のスループットを低下させることなく、ウォーターマークの発生やパーティクルの残存を抑制することができ、基板の処理を良好に行うことができる。   In the present invention, generation of watermarks and remaining particles can be suppressed without reducing the throughput of the substrate processing apparatus, and the substrate can be processed satisfactorily.

基板処理装置を示す平面図。The top view which shows a substrate processing apparatus. 基板液処理装置を示す側面断面図。Side surface sectional drawing which shows a substrate liquid processing apparatus. 同平面図。FIG. 基板処理プログラムを示すフローチャート。The flowchart which shows a substrate processing program. 基板処理装置の動作説明図（基板受取工程、基板受渡工程）。Operation | movement explanatory drawing of a substrate processing apparatus (a board | substrate receiving process, a board | substrate delivery process). 基板処理装置の動作説明図（薬液供給工程）。Operation | movement explanatory drawing of a substrate processing apparatus (chemical solution supply process). 基板処理装置の動作説明図（処理液供給工程）。Operation | movement explanatory drawing of a substrate processing apparatus (process liquid supply process). 基板処理装置の動作説明図（処理液補給工程）。Operation | movement explanatory drawing of a substrate processing apparatus (process liquid replenishment process). 基板処理装置の動作説明図（処理液補給工程）。Operation | movement explanatory drawing of a substrate processing apparatus (process liquid replenishment process). 基板処理装置の動作説明図（置換液供給工程）。Operation | movement explanatory drawing of a substrate processing apparatus (substitution liquid supply process). 基板処理装置の動作説明図（不活性ガス供給工程）。Operation | movement explanatory drawing of a substrate processing apparatus (inert gas supply process). 基板処理装置の動作説明図（不活性ガス供給工程）。Operation | movement explanatory drawing of a substrate processing apparatus (inert gas supply process). 基板に形成される液膜の状態を示す模式図。The schematic diagram which shows the state of the liquid film formed in a board | substrate.

以下に、本発明に係る基板処理装置及び基板処理方法の具体的な構成について図面を参照しながら説明する。   Hereinafter, specific configurations of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings.

図１に示すように、基板処理装置１は、前端部に搬入出部２を形成する。搬入出部２には、複数枚（たとえば、25枚）の基板３（ここでは、半導体ウエハ）を収容したキャリア４が搬入及び搬出され、左右に並べて載置される。   As shown in FIG. 1, the substrate processing apparatus 1 forms a carry-in / out unit 2 at the front end. A carrier 4 containing a plurality of (for example, 25) substrates 3 (in this case, semiconductor wafers) is carried into and out of the carry-in / out unit 2 and placed side by side on the left and right.

また、基板処理装置１は、搬入出部２の後部に搬送部５を形成する。搬送部５は、前側に基板搬送装置６を配置するとともに、後側に基板受渡台７を配置する。この搬送部５では、搬入出部２に載置されたいずれかのキャリア４と基板受渡台７との間で基板搬送装置６を用いて基板３を搬送する。   Further, the substrate processing apparatus 1 forms a transport unit 5 at the rear part of the carry-in / out unit 2. The transfer unit 5 has a substrate transfer device 6 disposed on the front side and a substrate delivery table 7 disposed on the rear side. In the transport unit 5, the substrate 3 is transported between the carrier 4 placed on the carry-in / out unit 2 and the substrate delivery table 7 using the substrate transport device 6.

また、基板処理装置１は、搬送部５の後部に処理部８を形成する。処理部８は、中央に前後に伸延する基板搬送装置９を配置するとともに、基板搬送装置９の左右両側に基板３を液処理するための基板液処理装置10を前後に並べて配置する。この処理部８では、基板受渡台７と基板液処理装置10との間で基板搬送装置９を用いて基板３を搬送し、基板液処理装置10を用いて基板３の液処理を行う。   Further, the substrate processing apparatus 1 forms a processing unit 8 at the rear part of the transport unit 5. The processing unit 8 arranges a substrate transfer device 9 extending in the front-rear direction at the center, and arranges a substrate liquid processing device 10 for liquid processing the substrate 3 side by side on the left and right sides of the substrate transfer device 9. In the processing unit 8, the substrate 3 is transferred between the substrate delivery table 7 and the substrate liquid processing apparatus 10 using the substrate transfer apparatus 9, and the substrate 3 is liquid processed using the substrate liquid processing apparatus 10.

基板液処理装置10は、図２及び図３に示すように、基板回転部11と薬液供給部12と処理液供給部13と置換液供給部14と不活性ガス供給部15と処理液補給部16と回収部17とを有し、これらを制御部18で制御している。ここで、基板回転部11は、基板３を保持しながら回転させる。薬液供給部12は、基板３に洗浄用の薬液を供給する。処理液供給部13は、基板３にリンス用の処理液（たとえば、純水）を供給する。置換液供給部14は、基板３に置換液（ここでは、処理液よりも揮発性の高い乾燥用液、たとえば、ＩＰＡ）を供給する。不活性ガス供給部15は、基板３に不活性ガスを供給する。処理液補給部16は、置換液よりも基板３の外周側に処理液を補助的に供給（補給）するものであり、処理液供給部13と同様に基板３に処理液を供給する処理液供給部として機能する。回収部17は、薬液や処理液や置換液などを回収する。   As shown in FIGS. 2 and 3, the substrate liquid processing apparatus 10 includes a substrate rotating unit 11, a chemical solution supply unit 12, a process solution supply unit 13, a replacement solution supply unit 14, an inert gas supply unit 15, and a process solution supply unit. 16 and a collection unit 17, which are controlled by the control unit 18. Here, the substrate rotating unit 11 rotates the substrate 3 while holding it. The chemical liquid supply unit 12 supplies a chemical liquid for cleaning to the substrate 3. The processing liquid supply unit 13 supplies a processing liquid for rinsing (for example, pure water) to the substrate 3. The replacement liquid supply unit 14 supplies the substrate 3 with a replacement liquid (here, a drying liquid having higher volatility than the processing liquid, for example, IPA). The inert gas supply unit 15 supplies an inert gas to the substrate 3. The processing liquid replenishment unit 16 supplies (replenishes) the processing liquid to the outer peripheral side of the substrate 3 more than the replacement liquid, and supplies the processing liquid to the substrate 3 in the same manner as the processing liquid supply unit 13. Functions as a supply unit. The collection unit 17 collects a chemical solution, a processing solution, a replacement solution, and the like.

基板回転部11は、基板処理室19の内部略中央に上下に伸延させた回転軸20を回転自在に設けている。回転軸20の上端には、円板状のターンテーブル21が水平に取付けられている。ターンテーブル21の外周端縁には、３個の基板保持体22が円周方向に等間隔をあけて取付けられている。   The substrate rotating unit 11 is rotatably provided with a rotating shaft 20 extending vertically in the center of the substrate processing chamber 19. A disc-shaped turntable 21 is horizontally attached to the upper end of the rotating shaft 20. Three substrate holders 22 are attached to the outer peripheral edge of the turntable 21 at equal intervals in the circumferential direction.

また、基板回転部11は、回転軸20に基板回転機構23と基板昇降機構24を接続している。これらの基板回転機構23及び基板昇降機構24は、制御部18で回転制御や昇降制御される。   In addition, the substrate rotating unit 11 connects the substrate rotating mechanism 23 and the substrate lifting mechanism 24 to the rotating shaft 20. The substrate rotating mechanism 23 and the substrate lifting mechanism 24 are rotationally controlled and lifted / lowered by the control unit 18.

この基板回転部11は、ターンテーブル21の基板保持体22で基板３を水平に保持する。また、基板回転部11は、基板回転機構23でターンテーブル21に保持した基板３を回転させ、基板昇降機構24でターンテーブル21や基板３を昇降させる。   The substrate rotating unit 11 holds the substrate 3 horizontally by the substrate holder 22 of the turntable 21. The substrate rotating unit 11 rotates the substrate 3 held on the turntable 21 by the substrate rotating mechanism 23 and moves the turntable 21 and the substrate 3 up and down by the substrate lifting mechanism 24.

薬液供給部12は、基板処理室19に左右に水平に伸延させたガイドレール25を設け、ガイドレール25に前後に水平に伸延させたアーム26を左右移動自在に設けている。アーム26の先端下部左側には、薬液・処理液供給ノズル27を鉛直下向きに取付けている。薬液・処理液供給ノズル27には、洗浄用の薬液を供給するための薬液供給源28が流量調整器29を介して接続されている。この流量調整器29は、制御部18で流量制御される。   The chemical solution supply unit 12 is provided with a guide rail 25 horizontally extended in the left-right direction in the substrate processing chamber 19, and an arm 26 horizontally extended in the front-rear direction is provided on the guide rail 25 so as to be movable left and right. A chemical / treatment liquid supply nozzle 27 is attached vertically downward on the left side of the lower end of the tip of the arm 26. A chemical liquid supply source 28 for supplying a chemical liquid for cleaning is connected to the chemical liquid / treatment liquid supply nozzle 27 via a flow rate regulator 29. The flow rate regulator 29 is controlled by the control unit 18.

また、薬液供給部12は、アーム26に第1のノズル移動機構30を接続している。この第１のノズル移動機構30は、制御部18で移動制御される。   In addition, the chemical solution supply unit 12 connects the first nozzle moving mechanism 30 to the arm 26. The movement of the first nozzle moving mechanism 30 is controlled by the control unit 18.

処理液供給部13は、薬液・処理液供給ノズル27に処理液としてのリンス液を供給するための処理液供給源31を流量調整器32を介して接続している。この流量調整器32は、制御部18で流量制御される。   The processing liquid supply unit 13 connects a processing liquid supply source 31 for supplying a rinsing liquid as a processing liquid to a chemical / processing liquid supply nozzle 27 via a flow rate regulator 32. The flow rate regulator 32 is controlled by the control unit 18.

これらの薬液供給部12及び処理液供給部13は、第１のノズル移動機構30によって薬液・処理液供給ノズル27を基板３の中央上方（開始位置）と基板３の左外側方（退避位置）との間で移動可能であり、基板３の表面（上面）に向けて洗浄用の薬液やリンス用の処理液を吐出させることができる。なお、ここでは、薬液・処理液供給ノズル27から薬液と処理液を選択的に吐出するようにしているが、薬液と処理液とをそれぞれ別個のノズルから吐出するようにしてもよい。   The chemical solution supply unit 12 and the treatment solution supply unit 13 are moved by the first nozzle moving mechanism 30 so that the chemical solution / treatment solution supply nozzle 27 is located above the center of the substrate 3 (start position) and to the left outside of the substrate 3 (retracted position). The cleaning chemical solution and the rinsing treatment liquid can be discharged toward the surface (upper surface) of the substrate 3. Here, the chemical liquid and the processing liquid are selectively discharged from the chemical liquid / processing liquid supply nozzle 27, but the chemical liquid and the processing liquid may be discharged from separate nozzles.

置換液供給部14は、アーム26の先端下部右側に置換液供給ノズル33を鉛直下向きに取付けている。置換液供給ノズル33には、置換液を供給するための置換液供給源34が流量調整器35を介して接続されている。この流量調整器35は、制御部18で流量制御される。   The replacement liquid supply unit 14 has a replacement liquid supply nozzle 33 mounted vertically downward on the lower right side of the tip of the arm 26. A replacement liquid supply source 34 for supplying a replacement liquid is connected to the replacement liquid supply nozzle 33 via a flow rate regulator 35. The flow rate regulator 35 is controlled by the control unit 18.

この置換液供給部14は、第１のノズル移動機構30によって置換液供給ノズル33を基板３の中央上方（開始位置）と基板３の左外側方（退避位置）との間で移動可能であり、基板３の表面（上面）に向けて置換液を吐出させることができる。   The replacement liquid supply unit 14 can move the replacement liquid supply nozzle 33 between the center upper side (start position) of the substrate 3 and the left outer side (retraction position) of the substrate 3 by the first nozzle moving mechanism 30. The replacement liquid can be discharged toward the surface (upper surface) of the substrate 3.

不活性ガス供給部15は、基板処理室19に左右に水平に伸延させたガイドレール36を設け、ガイドレール36に前後に水平に伸延させたアーム37を左右移動自在に設けている。アーム37の先端下部中央には、第１の不活性ガス供給ノズル38が鉛直下向きに取付けられている。また、アーム37の先端下部左側には、第２の不活性ガス供給ノズル39が上方から下方右側に向けて傾斜させて取付けられている。第１及び第２の不活性ガス供給ノズル38,39には、不活性ガス（たとえば、窒素ガス）を供給するための不活性ガス供給源40が流量調整器41,42をそれぞれ介して接続されている。この流量調整器41,42は、制御部18で流量制御される。   The inert gas supply unit 15 is provided with a guide rail 36 horizontally extended in the left-right direction in the substrate processing chamber 19, and an arm 37 extended horizontally in the front-rear direction is provided on the guide rail 36 so as to be movable left and right. A first inert gas supply nozzle 38 is attached vertically downward in the center of the lower end of the arm 37. Further, a second inert gas supply nozzle 39 is attached to the left side of the lower end of the tip of the arm 37 so as to be inclined from the upper side to the lower right side. An inert gas supply source 40 for supplying an inert gas (for example, nitrogen gas) is connected to the first and second inert gas supply nozzles 38 and 39 via flow rate regulators 41 and 42, respectively. ing. The flow rate regulators 41 and 42 are controlled by the control unit 18.

また、不活性ガス供給部15は、アーム37に第２のノズル移動機構43を接続している。この第２のノズル移動機構43は、制御部18で移動制御される。   The inert gas supply unit 15 connects the second nozzle moving mechanism 43 to the arm 37. The second nozzle moving mechanism 43 is controlled to move by the control unit 18.

この不活性ガス供給部15は、第２のノズル移動機構43によって第１及び第２の不活性ガス供給ノズル38,39を基板３の中央上方（開始位置）と基板３の右外側方（退避位置）との間で移動可能であり、基板３の表面（上面）に向けて不活性ガスを吐出させることができる。その際に、第１の不活性ガス供給ノズル38からは、不活性ガスを基板３の表面に鉛直下向きに吐出させる。一方、第２の不活性ガス供給ノズル39からは、不活性ガスを基板３の表面に上方から外周側へ向けて傾斜状に吐出させる。   The inert gas supply unit 15 causes the second nozzle moving mechanism 43 to move the first and second inert gas supply nozzles 38 and 39 above the center of the substrate 3 (start position) and to the right outside of the substrate 3 (withdrawn). The inert gas can be discharged toward the surface (upper surface) of the substrate 3. At that time, the inert gas is discharged vertically downward onto the surface of the substrate 3 from the first inert gas supply nozzle 38. On the other hand, from the second inert gas supply nozzle 39, the inert gas is discharged to the surface of the substrate 3 in an inclined manner from the upper side to the outer peripheral side.

処理液補給部16は、アーム37の先端下部右側に処理液補給ノズル44を鉛直下向きに取付けている。処理液補給ノズル44には、処理液を補給するための処理液補給源45を流量調整器46を介して接続している。この流量調整器46は、制御部18で流量制御される。なお、ここでは、処理液補給源45と処理液供給源31とを別個のものを用いているが、同一のものを用いてもよい。   The processing liquid replenishing unit 16 has a processing liquid replenishing nozzle 44 mounted vertically downward on the right side at the lower end of the tip of the arm 37. A processing liquid supply source 45 for supplying the processing liquid is connected to the processing liquid supply nozzle 44 via a flow rate regulator 46. The flow rate regulator 46 is controlled by the control unit 18. Here, the processing liquid supply source 45 and the processing liquid supply source 31 are separately used, but the same may be used.

この処理液補給部16は、第２のノズル移動機構43によって処理液補給ノズル44を基板３の中央上方（開始位置）と基板３の右外側方（退避位置）との間で移動可能であり、基板３の表面（上面）に向けて処理液を吐出させることができる。   The processing liquid supply unit 16 can move the processing liquid supply nozzle 44 between the upper center of the substrate 3 (start position) and the right outer side of the substrate 3 (retraction position) by the second nozzle moving mechanism 43. The processing liquid can be discharged toward the surface (upper surface) of the substrate 3.

回収部17は、ターンテーブル21の周囲に円環状の回収カップ47を配置している。回収カップ47の上端部には、ターンテーブル21よりも一回り大きいサイズの開口を形成している。また、回収カップ47の下端部には、ドレイン48を接続している。   The collection unit 17 has an annular collection cup 47 disposed around the turntable 21. An opening having a size slightly larger than that of the turntable 21 is formed at the upper end of the recovery cup 47. A drain 48 is connected to the lower end of the recovery cup 47.

この回収部17は、基板３の表面に供給された処理液や置換液などを回収カップ47で回収し、ドレイン48から外部へと排出する。   The recovery unit 17 recovers the processing liquid, the replacement liquid, and the like supplied to the surface of the substrate 3 with a recovery cup 47 and discharges it from the drain 48 to the outside.

基板処理装置１は、以上に説明したように構成しており、制御部18（コンピュータ）に設けた記録媒体49に記録された各種のプログラムにしたがって制御部18で制御され、基板３の処理を行う。ここで、記録媒体49は、各種の設定データやプログラムを格納しており、ＲＯＭやＲＡＭなどのメモリーや、ハードディスク、ＣＤ−ＲＯＭ、ＤＶＤ−ＲＯＭやフレキシブルディスクなどのディスク状記録媒体などの公知のもので構成される。   The substrate processing apparatus 1 is configured as described above. The substrate processing apparatus 1 is controlled by the control unit 18 according to various programs recorded on the recording medium 49 provided in the control unit 18 (computer) to process the substrate 3. Do. Here, the recording medium 49 stores various setting data and programs, and is well-known such as a memory such as ROM and RAM, and a disk-shaped recording medium such as a hard disk, CD-ROM, DVD-ROM, and flexible disk. Composed of things.

そして、基板処理装置１は、記録媒体49に記録された基板処理プログラム（図４参照。）にしたがって以下に説明するように基板３の処理を行う。   Then, the substrate processing apparatus 1 processes the substrate 3 as described below according to the substrate processing program (see FIG. 4) recorded on the recording medium 49.

まず、基板処理装置１は、図５に示すように、基板搬送装置９によって搬送される基板３を基板液処理装置10で受け取る（基板受取工程）。   First, as shown in FIG. 5, the substrate processing apparatus 1 receives the substrate 3 transported by the substrate transport apparatus 9 by the substrate liquid processing apparatus 10 (substrate receiving step).

この基板受取工程では、制御部18は、基板昇降機構24によってターンテーブル21を所定位置まで上昇させる。そして、基板搬送装置９から基板処理室19の内部に搬送された１枚の基板３を基板保持体22で水平に保持した状態で受取る。その後、基板昇降機構24によってターンテーブル21を所定位置まで降下させる。なお、基板受取工程では、薬液・処理液供給ノズル27、置換液供給ノズル33、第１及び第２の不活性ガス供給ノズル38,39、処理液補給ノズル44をターンテーブル21の外周よりも外方の退避位置に退避させておく。   In this substrate receiving process, the control unit 18 raises the turntable 21 to a predetermined position by the substrate lifting mechanism 24. Then, the single substrate 3 transferred from the substrate transfer apparatus 9 to the inside of the substrate processing chamber 19 is received while being held horizontally by the substrate holder 22. Thereafter, the turntable 21 is lowered to a predetermined position by the substrate lifting mechanism 24. In the substrate receiving process, the chemical / treatment liquid supply nozzle 27, the replacement liquid supply nozzle 33, the first and second inert gas supply nozzles 38 and 39, and the treatment liquid supply nozzle 44 are removed from the outer periphery of the turntable 21. Retreat to the retreat position.

次に、基板処理装置１は、図６に示すように、基板３の表面に薬液を供給して基板３の洗浄処理を行う（薬液供給工程）。   Next, as shown in FIG. 6, the substrate processing apparatus 1 supplies a chemical solution to the surface of the substrate 3 to perform a cleaning process on the substrate 3 (chemical solution supplying step).

この薬液供給工程では、制御部18は、第１のノズル移動機構30によってアーム26を移動させて薬液・処理液供給ノズル27を基板３の中心部上方の供給開始位置に配置する。また、基板回転機構23によって所定の回転速度でターンテーブル21を回転させることで基板３を回転させる。その後、流量調整器29によって所定流量に流量制御された薬液を薬液・処理液供給ノズル27から基板３の表面に向けて吐出させる。なお、基板３に供給された薬液は回収カップ47で回収されドレイン48から外部に排出される。その後、流量調整器29によって薬液の吐出を停止させる。   In this chemical solution supply step, the control unit 18 moves the arm 26 by the first nozzle moving mechanism 30 to place the chemical solution / treatment solution supply nozzle 27 at the supply start position above the center of the substrate 3. Further, the substrate 3 is rotated by rotating the turntable 21 at a predetermined rotation speed by the substrate rotation mechanism 23. Thereafter, the chemical liquid whose flow rate is controlled to a predetermined flow rate by the flow rate regulator 29 is discharged from the chemical liquid / treatment liquid supply nozzle 27 toward the surface of the substrate 3. The chemical solution supplied to the substrate 3 is recovered by the recovery cup 47 and discharged from the drain 48 to the outside. Thereafter, the discharge of the chemical liquid is stopped by the flow rate regulator 29.

次に、基板処理装置１は、図７に示すように、基板３の表面に処理液を供給して基板３のリンス処理を行う（処理液供給工程）。   Next, as shown in FIG. 7, the substrate processing apparatus 1 supplies a processing liquid to the surface of the substrate 3 to perform a rinsing process on the substrate 3 (processing liquid supply process).

この処理液供給工程では、制御部18は、薬液・処理液供給ノズル27を基板３の中心部上方に維持させた状態で、流量調整器32によって所定流量に流量制御された処理液を薬液・処理液供給ノズル27から基板３の表面に向けて吐出させる。これにより、基板３の表面に処理液の液膜が形成される。この処理液の液膜が基板３の表面に形成されたままの状態となるように処理液の吐出流量を調整する。なお、基板３に供給された処理液は回収カップ47で回収されドレイン48から外部に排出される。   In this processing liquid supply process, the control unit 18 maintains the chemical liquid / processing liquid supply nozzle 27 above the center of the substrate 3 and supplies the processing liquid whose flow rate is controlled to a predetermined flow rate by the flow rate regulator 32. The liquid is discharged from the processing liquid supply nozzle 27 toward the surface of the substrate 3. Thereby, a liquid film of the processing liquid is formed on the surface of the substrate 3. The discharge flow rate of the processing liquid is adjusted so that the liquid film of the processing liquid remains formed on the surface of the substrate 3. The processing liquid supplied to the substrate 3 is recovered by the recovery cup 47 and discharged from the drain 48 to the outside.

次に、基板処理装置１は、図８〜図１０に示すように、基板３の表面に処理液を補助的に供給（補給）する（処理液補給工程）と同時に、基板３の表面に置換液を供給して基板３の置換処理を行う（置換液供給工程）。   Next, as shown in FIGS. 8 to 10, the substrate processing apparatus 1 supplementally supplies (replenishes) the processing liquid to the surface of the substrate 3 (processing liquid replenishment step), and simultaneously replaces the surface of the substrate 3. Substrate 3 is replaced by supplying a liquid (substitution liquid supplying step).

処理液補給工程の開始時には、図８に示すように、薬液・処理液供給ノズル27から基板３の中央部上方への処理液の供給を継続して行うとともに、処理液補給ノズル44から基板３の外周部上方に向けて薬液・処理液供給ノズル27から吐出される処理液と同種の処理液を補給する。すなわち、制御部18は、流量調整器32によって所定流量に流量制御された処理液を薬液・処理液供給ノズル27から基板３の中央部上方に向けて吐出させる。また、第２のノズル移動機構43によってアーム37を移動させて処理液補給ノズル44を基板３の中心部よりも外周部上方の供給開始位置に配置する。その後、流量調整器46によって所定流量に流量制御された処理液を処理液補給ノズル44から基板３の表面に向けて吐出させる。これにより、基板３の表面に形成された処理液の液膜が保持される。その際に、処理液補給ノズル44から補給する処理液の流量を薬液・処理液供給ノズル27から供給する処理液の流量よりも少なくして、基板３の表面で処理液が飛散するのを防止している。なお、基板３に供給された処理液は回収カップ47で回収されドレイン48から外部に排出される。   At the start of the processing liquid supply step, as shown in FIG. 8, the processing liquid is continuously supplied from the chemical / processing liquid supply nozzle 27 to the upper part of the center of the substrate 3 and the substrate 3 is supplied from the processing liquid supply nozzle 44. The processing liquid of the same type as the processing liquid discharged from the chemical / processing liquid supply nozzle 27 is replenished upward. That is, the control unit 18 discharges the processing liquid whose flow rate is controlled to a predetermined flow rate by the flow rate regulator 32 from the chemical / processing liquid supply nozzle 27 toward the upper center of the substrate 3. Further, the arm 37 is moved by the second nozzle moving mechanism 43 so that the treatment liquid supply nozzle 44 is disposed at a supply start position above the outer peripheral portion of the substrate 3. Thereafter, the processing liquid whose flow rate is controlled to a predetermined flow rate by the flow rate regulator 46 is discharged from the processing liquid supply nozzle 44 toward the surface of the substrate 3. Thereby, the liquid film of the processing liquid formed on the surface of the substrate 3 is held. At that time, the flow rate of the processing liquid supplied from the processing liquid supply nozzle 44 is made smaller than the flow rate of the processing liquid supplied from the chemical / processing liquid supply nozzle 27 to prevent the processing liquid from scattering on the surface of the substrate 3. doing. The processing liquid supplied to the substrate 3 is recovered by the recovery cup 47 and discharged from the drain 48 to the outside.

処理液補給工程を開始した後に、図９に示すように、処理液供給工程を終了し、置換液供給工程を開始する。すなわち、制御部18は、第１のノズル移動機構30によってアーム26を移動させて置換液供給ノズル33を基板３の中心部上方の供給開始位置に配置する。その後、流量調整器32によって処理液の吐出を停止させるとともに、流量調整器35によって所定流量に流量制御された置換液を置換液供給ノズル33から基板３の表面に向けて鉛直下向きに吐出させる。   After starting the treatment liquid supply process, as shown in FIG. 9, the treatment liquid supply process is ended, and the replacement liquid supply process is started. That is, the control unit 18 moves the arm 26 by the first nozzle moving mechanism 30 to place the replacement liquid supply nozzle 33 at the supply start position above the center of the substrate 3. Thereafter, the flow controller 32 stops the discharge of the processing liquid, and the replacement liquid whose flow rate is controlled to a predetermined flow rate by the flow controller 35 is discharged vertically downward from the replacement liquid supply nozzle 33 toward the surface of the substrate 3.

置換液供給工程を開始し所定の時間処理液を供給した後に、図１０に示すように、処理液補給工程を終了する。すなわち、制御部18は、第２のノズル移動機構43によってアーム37（処理液補給ノズル44）の移動を停止させるとともに、流量調整器46によって処理液の吐出を停止させる。置換液は置換液供給ノズル33から基板３に吐出させておく。これにより、基板３の表面に置換液の液膜が形成される。なお、基板３に供給された置換液は回収カップ47で回収されドレイン48から外部に排出される。   After the replacement liquid supply process is started and the processing liquid is supplied for a predetermined time, the processing liquid supply process is ended as shown in FIG. That is, the control unit 18 stops the movement of the arm 37 (processing liquid supply nozzle 44) by the second nozzle moving mechanism 43 and stops the discharge of the processing liquid by the flow rate regulator 46. The replacement liquid is discharged from the replacement liquid supply nozzle 33 onto the substrate 3 in advance. Thereby, a liquid film of the replacement liquid is formed on the surface of the substrate 3. The replacement liquid supplied to the substrate 3 is recovered by the recovery cup 47 and discharged from the drain 48 to the outside.

このように、置換液を供給する際に、処理液の供給を停止せずに処理液を置換液の供給位置よりも基板３の外周側に補給することで、遠心力の作用によって基板３の表面で処理液や置換液の液膜が途切れた状態となることなく、基板３の表面に処理液や置換液の液膜を保持する（形成し続ける）ことができる。これにより、基板３の表面に液滴状の置換液が残留することに起因するウォーターマークの発生やパーティクルの残存を抑制することができる。従来のように置換液を供給する際に処理液を補給しない場合には、図１３に模式的に示すように、基板３の内周側（一点鎖線で示す基板と同心円状（基板の中心から所定半径）の円形領域内）では、置換液の液膜が形成されるものの、基板の外周側では、置換液の液膜が途切れてしまう。そこで、処理液を補給しない場合でも置換液の液膜が基板と同心円状に形成される円形領域内に処理液を補給するのが望ましい。これにより、基板の外周側でも置換液の液膜を保持することができる。なお、置換液供給工程は、処理液補給工程よりも前に開始してもよく、処理液補給工程と同時に開始してもよい。また、処理液補給工程では、第２のノズル移動機構43によって処理液補給ノズル44を基板３に沿って右外側方に向けて水平に移動させてもよい。これにより、液膜の保持をより一層確実に行うことができる。   Thus, when supplying the replacement liquid, the processing liquid is replenished to the outer peripheral side of the substrate 3 from the supply position of the replacement liquid without stopping the supply of the processing liquid. The liquid film of the treatment liquid or the substitution liquid can be held (continuously formed) on the surface of the substrate 3 without the liquid film of the treatment liquid or the substitution liquid being interrupted on the surface. Thereby, it is possible to suppress the generation of watermarks and the remaining of particles due to the droplet-like substitution liquid remaining on the surface of the substrate 3. When the processing liquid is not replenished when supplying the replacement liquid as in the conventional case, as schematically shown in FIG. 13, the inner circumference side of the substrate 3 (concentric with the substrate indicated by the one-dot chain line (from the center of the substrate) In a circular region having a predetermined radius), a liquid film of the replacement liquid is formed, but the liquid film of the replacement liquid is interrupted on the outer peripheral side of the substrate. Therefore, it is desirable to replenish the processing liquid in a circular region where the liquid film of the replacement liquid is formed concentrically with the substrate even when the processing liquid is not replenished. As a result, the liquid film of the replacement liquid can be held on the outer peripheral side of the substrate. The replacement liquid supply process may be started before the treatment liquid supply process, or may be started simultaneously with the treatment liquid supply process. In the processing liquid supply step, the processing liquid supply nozzle 44 may be moved horizontally along the substrate 3 toward the right outer side by the second nozzle moving mechanism 43. Thereby, the liquid film can be held more reliably.

次に、基板処理装置１は、基板３に不活性ガスを吹き付けて基板３の表面から置換液を除去して基板３の乾燥処理を行う（不活性ガス供給工程）。この不活性ガス供給工程は、基板３の中央部に不活性ガスを吹き付けて基板３の中央部だけを部分的に乾燥させる中央部乾燥処理工程と、基板３の中央部から外周側に移動しながら不活性ガスを吹き付けて基板３の中央部から外周側を徐々に全体的に乾燥させる外周部乾燥処理工程とを有する。   Next, the substrate processing apparatus 1 blows an inert gas onto the substrate 3 to remove the replacement liquid from the surface of the substrate 3 and performs a drying process on the substrate 3 (inert gas supply step). In this inert gas supply process, an inert gas is sprayed on the central part of the substrate 3 to partially dry only the central part of the substrate 3, and the process moves from the central part of the substrate 3 to the outer peripheral side. However, it has an outer peripheral portion drying treatment step of gradually drying the outer peripheral side from the central portion of the substrate 3 by blowing an inert gas.

中央部乾燥処理工程では、図１１に示すように、制御部18は、また、第１のノズル移動機構30によって置換液供給ノズル33を基板３に沿って左外側方に向けて水平に移動させながら、流量調整器35によって所定流量に流量制御された置換液を置換液供給ノズル33から基板３の表面に向けて鉛直下向きに吐出させる。また、第２のノズル移動機構43によってアーム37を移動させて第１の不活性ガス供給ノズル38を基板３の中心部上方の供給開始位置に移動させる。その後、流量調整器41によって所定流量に流量制御された不活性ガスを第１の不活性ガス供給ノズル38から基板３の表面に向けて鉛直下向きに吐出させる。その際には、第２のノズル移動機構43を駆動せずに、第１の不活性ガス供給ノズル38を基板３の中央上方で停止させておく。この中央部乾燥処理工程では、基板３の中央上方で停止する第１の不活性ガス供給ノズル38から基板３の中央部に向けて鉛直下向きに不活性ガスが吐出される。そのため、基板３の表面に形成された置換液の液膜が基板３の中央部だけ外周側に除去され、基板３の中央部だけが部分的に乾燥した状態となる。   In the central drying process, as shown in FIG. 11, the controller 18 also moves the replacement liquid supply nozzle 33 horizontally along the substrate 3 toward the left outer side by the first nozzle moving mechanism 30. However, the replacement liquid whose flow rate is controlled to a predetermined flow rate by the flow rate regulator 35 is discharged vertically downward from the replacement liquid supply nozzle 33 toward the surface of the substrate 3. In addition, the arm 37 is moved by the second nozzle moving mechanism 43 to move the first inert gas supply nozzle 38 to the supply start position above the center of the substrate 3. Thereafter, an inert gas whose flow rate is controlled to a predetermined flow rate by the flow rate regulator 41 is discharged vertically downward from the first inert gas supply nozzle 38 toward the surface of the substrate 3. At that time, the first inert gas supply nozzle 38 is stopped above the center of the substrate 3 without driving the second nozzle moving mechanism 43. In the central drying process, the inert gas is discharged vertically downward from the first inert gas supply nozzle 38 that stops at the upper center of the substrate 3 toward the central portion of the substrate 3. Therefore, the liquid film of the replacement liquid formed on the surface of the substrate 3 is removed on the outer peripheral side only at the central portion of the substrate 3, and only the central portion of the substrate 3 is in a partially dried state.

その後、外周部乾燥処理工程では、図１２に示すように、制御部18は、流量調整器41によって第１の不活性ガス供給ノズル38からの不活性ガスの吐出を停止させた後に、第２のノズル移動機構43によってアーム37を移動させて第２の不活性ガス供給ノズル39を基板３の中心部上方の供給開始位置に移動させる。その後、流量調整器42によって所定流量に流量制御された不活性ガスを第２の不活性ガス供給ノズル39から基板３の表面へ基板３の上方から外側方に向けて傾斜状に吐出させる。その際には、第２のノズル移動機構43によって第２の不活性ガス供給ノズル39を基板３に沿って基板３の中心から右側の周縁部に向けて水平に移動させる。また、第１のノズル移動機構30によって置換液供給ノズル33を基板３に沿って左外側方に向けて水平に移動させながら、流量調整器35によって所定流量に流量制御された置換液を置換液供給ノズル33から基板３の表面に向けて鉛直下向きに吐出させる。その後、流量調整器35,42によって置換液及び不活性ガスの吐出を停止させる。置換液及び不活性ガスの吐出を停止してから所定時間経過後に、基板回転機構23によって基板３（ターンテーブル21）の回転を停止させる。外周部乾燥処理工程の最後において、第１のノズル移動機構30によってアーム26を移動させて置換液供給ノズル33を基板３の外周よりも左外方の退避位置に移動させる。また、第２のノズル移動機構43によってアーム37を移動させて第１及び第２の不活性ガス供給ノズル38,39を基板３の外周よりも右外方の退避位置に移動させる。   Thereafter, in the outer peripheral portion drying process, as shown in FIG. 12, the control unit 18 stops the discharge of the inert gas from the first inert gas supply nozzle 38 by the flow rate regulator 41, and then the second The arm 37 is moved by the nozzle moving mechanism 43 to move the second inert gas supply nozzle 39 to the supply start position above the center of the substrate 3. Thereafter, the inert gas whose flow rate is controlled to a predetermined flow rate by the flow rate regulator 42 is discharged from the second inert gas supply nozzle 39 to the surface of the substrate 3 in an inclined manner from the upper side to the outer side of the substrate 3. At that time, the second inert gas supply nozzle 39 is moved horizontally along the substrate 3 from the center of the substrate 3 toward the right peripheral portion by the second nozzle moving mechanism 43. Further, the replacement liquid whose flow rate is controlled to a predetermined flow rate by the flow rate regulator 35 while the replacement liquid supply nozzle 33 is horizontally moved toward the left outer side along the substrate 3 by the first nozzle moving mechanism 30 is replaced with the replacement liquid. It is discharged vertically downward from the supply nozzle 33 toward the surface of the substrate 3. Thereafter, the discharge of the replacement liquid and the inert gas is stopped by the flow rate regulators 35 and 42. The substrate rotating mechanism 23 stops the rotation of the substrate 3 (turn table 21) after a predetermined time has elapsed after stopping the discharge of the replacement liquid and the inert gas. At the end of the outer peripheral portion drying process, the arm 26 is moved by the first nozzle moving mechanism 30 to move the replacement liquid supply nozzle 33 to the retracted position on the left outer side than the outer periphery of the substrate 3. Further, the arm 37 is moved by the second nozzle moving mechanism 43 to move the first and second inert gas supply nozzles 38 and 39 to the retreat position on the right outer side than the outer periphery of the substrate 3.

最後に、基板処理装置１は、図５に示すように、基板３を基板液処理装置10から基板搬送装置９へ受け渡す（基板受渡工程）。   Finally, as shown in FIG. 5, the substrate processing apparatus 1 transfers the substrate 3 from the substrate liquid processing apparatus 10 to the substrate transfer apparatus 9 (substrate transfer process).

この基板受渡工程では、制御部18は、基板昇降機構24によってターンテーブル21を所定位置まで上昇させる。そして、ターンテーブル21で保持した基板３を基板搬送装置９に受渡す。その後、基板昇降機構24によってターンテーブル21を所定位置まで降下させる。   In this substrate delivery process, the control unit 18 raises the turntable 21 to a predetermined position by the substrate lifting mechanism 24. Then, the substrate 3 held by the turntable 21 is delivered to the substrate transfer device 9. Thereafter, the turntable 21 is lowered to a predetermined position by the substrate lifting mechanism 24.

なお、上記基板処理装置１では、処理液供給部13と処理液補給部16とを別々のアーム26,37に設けているが、これに限られず、これらを一つのアームに形成することもできる。また、薬液供給部12と処理液供給部13とを一つのアーム26に形成しているが、これらを別々のアームに形成することもできる。また、不活性ガス供給部15に第１の不活性ガス供給ノズル38と第２の不活性ガス供給ノズル39を設けているが、いずれか一個だけの構成とすることもできる。また、処理液の補給は置換液の供給位置より基板３の外周側であればよいが、処理液の補給位置（処理液補給ノズル44の位置）と置換液の供給位置（置換液供給ノズル33の位置）との間隔や、処理液の補給流量及び置換液の供給流量や、基板３の回転速度などの条件によって、基板３の表面で処理液や置換液が衝突による飛散が生じるおそれがある。そのため、処理液や置換液の飛散が生じない条件の範囲を予め実験等で定めておき、その範囲内で適宜設定することが望ましい。さらに、上記基板処理装置１では、リンス処理後に置換処理を行う場合に処理液を補給して処理液の液膜を形成しているが、これに限られず、基板３を処理液（疎水化液）で疎水化処理した後に、処理液（疎水化液）を置換液に置換する置換処理を行う場合などにも適用することができる。   In the substrate processing apparatus 1, the processing liquid supply unit 13 and the processing liquid supply unit 16 are provided on the separate arms 26 and 37, but the present invention is not limited thereto, and these can be formed on one arm. . Further, although the chemical liquid supply unit 12 and the treatment liquid supply unit 13 are formed on one arm 26, they can be formed on separate arms. Further, although the first inert gas supply nozzle 38 and the second inert gas supply nozzle 39 are provided in the inert gas supply unit 15, only one of them may be configured. Further, the replenishment of the processing liquid may be performed on the outer peripheral side of the substrate 3 from the supply position of the replacement liquid. ), The supply flow rate of the treatment liquid, the supply flow rate of the replacement liquid, the rotation speed of the substrate 3, and the like. . For this reason, it is desirable that a range of conditions under which the treatment liquid or the substitution liquid does not scatter is determined in advance by experiments or the like, and is appropriately set within the range. Further, in the substrate processing apparatus 1, when the replacement process is performed after the rinsing process, the processing liquid is replenished to form a liquid film of the processing liquid. This can also be applied to the case where a replacement treatment is performed in which the treatment liquid (hydrophobization liquid) is replaced with a replacement liquid after the hydrophobization treatment in FIG.

以上に説明したように、上記基板処理装置１（基板処理装置１で実行する基板処理方法及び基板処理プログラム）では、回転する基板３に処理液を供給して基板３の表面全体に処理液の液膜を形成しておき、基板３に置換液を供給する際に、置換液よりも基板３の外周側に処理液を補給して処理液の液膜を保持している。このように、処理液を補給することで基板３の回転数を低減させることなく基板３の表面の処理液の液膜を保持しているために、基板処理装置１のスループットを低下させることなく、ウォーターマークの発生やパーティクルの残存を抑制することができ、基板３の処理を良好に行うことができる。また、置換液の液膜を確実に形成するために、置換液の流量を増やすことが考えられるが、本実施例のように実施することで置換液の消費量を増やすことなく液膜を形成することができる。   As described above, in the substrate processing apparatus 1 (the substrate processing method and the substrate processing program executed by the substrate processing apparatus 1), the processing liquid is supplied to the rotating substrate 3 and the processing liquid is applied to the entire surface of the substrate 3. A liquid film is formed, and when the replacement liquid is supplied to the substrate 3, the processing liquid is replenished to the outer peripheral side of the substrate 3 with respect to the replacement liquid to hold the liquid film of the processing liquid. As described above, since the liquid film of the processing liquid on the surface of the substrate 3 is held without reducing the number of rotations of the substrate 3 by replenishing the processing liquid, the throughput of the substrate processing apparatus 1 is not reduced. Further, generation of watermarks and remaining particles can be suppressed, and the substrate 3 can be processed satisfactorily. In addition, it is conceivable to increase the flow rate of the replacement liquid in order to reliably form the liquid film of the replacement liquid. However, the liquid film can be formed without increasing the consumption of the replacement liquid by carrying out as in this embodiment. can do.

１ 基板処理装置
11 基板回転部
12 薬液供給部
13 処理液供給部
14 置換液供給部
15 不活性ガス供給部
16 処理液補給部
18 制御部 1 Substrate processing equipment
11 Substrate rotating part
12 Chemical supply section
13 Treatment liquid supply unit
14 Replacement fluid supply unit
15 Inert gas supply section
16 Treatment liquid replenishment section
18 Control unit

Claims (6)

基板を保持しながら回転させる基板回転部と、
前記基板に処理液を供給する処理液供給部と、
前記処理液供給部から供給された前記処理液と置換させる置換液を前記基板に供給する置換液供給部と、を備え、
前記置換液供給部から供給される置換液よりも前記基板の外周側に前記処理液供給部から前記処理液を補給して処理液の液膜を形成し、
前記置換液供給部から前記置換液を供給する際に、
前記置換液供給部から前記基板の中央部上方に向けて前記置換液を供給し、
同時に、前記処理液供給部は、処理液を補給しない場合において置換液の液膜が基板と同心円状に形成される円形領域内に、前記基板の外周方向に向けて移動しながら前記処理液を供給することを特徴とする基板処理装置。 A substrate rotating unit that rotates while holding the substrate;
A treatment liquid supply unit for supplying a treatment liquid to the substrate;
A replacement liquid supply unit that supplies the substrate with a replacement liquid that replaces the processing liquid supplied from the processing liquid supply unit;
Forming a liquid film of the processing liquid by replenishing the processing liquid from the processing liquid supply section on the outer peripheral side of the substrate from the replacement liquid supplied from the replacement liquid supply section;
When supplying the replacement liquid from the replacement liquid supply unit,
Supplying the replacement liquid from the replacement liquid supply section toward the upper center of the substrate;
At the same time, when the processing liquid supply unit does not replenish the processing liquid, the processing liquid is supplied while moving toward the outer periphery of the substrate in a circular region where the liquid film of the replacement liquid is formed concentrically with the substrate. A substrate processing apparatus characterized by being supplied . 前記処理液供給部は、前記基板の周縁部で前記処理液の補給を停止することを特徴とする請求項１に記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein the processing liquid supply unit stops supply of the processing liquid at a peripheral edge of the substrate. 前記処理液供給部は、前記置換液供給部から前記基板への前記置換液の供給を開始するよりも前に前記処理液の補給を開始することを特徴とする請求項１又は請求項２に記載の基板処理装置。   3. The process liquid supply unit according to claim 1, wherein the processing liquid supply unit starts replenishment of the processing liquid before starting the supply of the replacement liquid from the replacement liquid supply unit to the substrate. The substrate processing apparatus as described. 回転する基板に処理液を供給する処理液供給工程と、
前記基板に供給された前記処理液を置換するための置換液を基板に供給して置換液の液膜を形成する置換液供給工程と、
前記基板に供給される前記置換液よりも前記基板の外周側に前記処理液を補給して処理液の液膜を形成する処理液補給工程と、
を有し、
前記置換液供給工程では、前記基板の中央部上方に向けて前記置換液を供給し、
前記処理液補給工程では、前記置換液供給工程と同時に、処理液を補給しない場合において置換液の液膜が基板と同心円状に形成される円形領域内に、前記基板の外周方向に向けて移動しながら前記処理液を供給することを特徴とする基板処理方法。 A treatment liquid supply step for supplying the treatment liquid to the rotating substrate;
A replacement liquid supply step of supplying a replacement liquid for replacing the processing liquid supplied to the substrate to form a liquid film of the replacement liquid;
A treatment liquid replenishing step of replenishing the treatment liquid on the outer peripheral side of the substrate with respect to the replacement liquid supplied to the substrate to form a liquid film of the treatment liquid;
Have
In the replacement liquid supply step, the replacement liquid is supplied toward the upper center of the substrate,
In the processing liquid replenishing step, simultaneously with the replacement liquid supplying step, the liquid film of the replacement liquid moves toward the outer periphery of the substrate in a circular area formed concentrically with the substrate when the processing liquid is not replenished. The substrate processing method is characterized in that the processing liquid is supplied . 前記処理液補給工程は、前記置換液供給工程で前記基板への前記置換液の供給を開始するよりも前に前記処理液の補給を開始することを特徴とする請求項４に記載の基板処理方法。 5. The substrate processing according to claim 4 , wherein the processing liquid supply step starts supply of the processing liquid before starting the supply of the replacement liquid to the substrate in the replacement liquid supply step. 6. Method. 基板を保持しながら回転させる基板回転部と、
前記基板に処理液を供給する処理液供給部と、
前記処理液供給部から供給された前記処理液と置換させる置換液を前記基板に供給する置換液供給部と、
を有する基板処理装置を用い、
前記基板回転部によって前記基板を回転させ、前記処理液供給部によって前記基板に前記処理液を供給させ（処理液供給工程）、その後、前記置換液供給部によって前記基板に前記置換液を供給させて置換液の液膜を形成する（置換液供給工程）とともに、前記処理液供給部によって前記置換液よりも前記基板の外周側に前記処理液を補給させて処理液の液膜を形成し（処理液補給工程）、
前記置換液供給工程では、前記基板の中央部上方に向けて前記置換液を供給し、
前記処理液補給工程では、前記置換液供給工程と同時に、処理液を補給しない場合において置換液の液膜が基板と同心円状に形成される円形領域内に、前記基板の外周方向に向けて移動しながら前記処理液を供給することを特徴とする基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体。
A substrate rotating unit that rotates while holding the substrate;
A treatment liquid supply unit for supplying a treatment liquid to the substrate;
A replacement liquid supply unit that supplies the substrate with a replacement liquid that replaces the processing liquid supplied from the processing liquid supply unit;
Using a substrate processing apparatus having
The substrate is rotated by the substrate rotation unit, the processing liquid is supplied to the substrate by the processing liquid supply unit (processing liquid supply step), and then the replacement liquid is supplied to the substrate by the replacement liquid supply unit. Then, a liquid film of the replacement liquid is formed (substitution liquid supply step), and a liquid film of the processing liquid is formed by supplying the processing liquid to the outer peripheral side of the substrate from the replacement liquid by the processing liquid supply unit ( Treatment liquid replenishment process),
In the replacement liquid supply step, the replacement liquid is supplied toward the upper center of the substrate,
In the processing liquid replenishing step, simultaneously with the replacement liquid supplying step, the liquid film of the replacement liquid moves toward the outer periphery of the substrate in a circular area formed concentrically with the substrate when the processing liquid is not replenished. A computer-readable recording medium having a substrate processing program recorded thereon, wherein the processing liquid is supplied .
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