JP2014209600A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method capable of achieving improvement in substrate processing efficiency and suppression of the amount of processing liquid used.SOLUTION: A substrate processing apparatus 1 according to an embodiment comprises: a processing liquid supply unit 6 for supplying a processing liquid to a surface of a substrate W; and a heating unit 8 for heating the substrate W by irradiating the surface of the substrate W with light which is absorbed by the substrate W and passes through the processing liquid. Thus, the surface of the substrate W is irradiated with the light which is absorbed by the substrate W and passes through the processing liquid, to heat the substrate W, thereby achieving improvement in substrate processing efficiency and suppression of the amount of processing liquid used.

Description

  Embodiments described herein relate generally to a substrate processing apparatus and a substrate processing method.

  A substrate processing apparatus is an apparatus for processing a substrate surface by supplying a processing liquid (for example, a resist stripping solution or a cleaning liquid) to the surface of a substrate such as a wafer or a liquid crystal substrate in a manufacturing process of a semiconductor or a liquid crystal panel. In the supply of the processing liquid by this substrate processing apparatus, in order to improve the substrate processing efficiency, a substrate processing is proposed in which the processing liquid is heated in advance and the surface of the substrate is processed using the properties and heat quantity of the processing liquid ( For example, see Patent Document 1).

  Here, the final temperature of the processing liquid by the heating described above, that is, the liquid temperature required for improving the substrate processing efficiency varies depending on the type of the processing liquid. For example, SPM (sulfuric acid and hydrogen peroxide solution) is used as the processing liquid. When the liquid mixture is used, the SPM is heated until the liquid temperature reaches about 80 ° C., and then supplied to the substrate surface.

JP 2007-88381 A

  However, even if a preheated processing liquid is supplied to the substrate surface, the temperature of the processing liquid is affected by the temperature of the substrate and the surrounding atmosphere (both temperatures are about room temperature). That is, the amount of heat of the processing liquid is deprived by the substrate and the surrounding atmosphere, and the temperature of the processing liquid is lowered, so that the substrate processing efficiency is lowered. In addition, since the preheated processing liquid is supplied to the surface of the substrate through a pipe or the like, the temperature of the processing liquid is lowered during that time, and the substrate processing efficiency is also lowered.

  Here, if the preheated processing liquid is continuously supplied to the substrate, the temperature of the substrate and the surrounding atmosphere gradually rises. For this purpose, the processing liquid needs to be supplied for a long time, A large amount of liquid will be used.

  The problem to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method capable of realizing improvement in substrate processing efficiency and suppression of the amount of processing liquid used.

  The substrate processing apparatus according to the embodiment includes a processing liquid supply unit that supplies a processing liquid to the surface of the substrate, a heating unit that irradiates the surface of the substrate with light that is absorbed by the substrate and passes through the processing liquid, and heats the substrate. Is provided.

  The substrate processing method according to the embodiment includes a step of supplying a processing liquid to the surface of the substrate and a step of heating the substrate by irradiating the surface of the substrate with light absorbed by the substrate and passing through the processing liquid.

  According to the present invention, it is possible to improve the substrate processing efficiency and suppress the amount of processing liquid used.

It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a flowchart which shows the flow of the substrate processing process which concerns on 1st Embodiment. It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 2nd Embodiment.

(First embodiment)
A first embodiment will be described with reference to FIGS. 1 and 2.

  As shown in FIG. 1, the substrate processing apparatus 1 according to the first embodiment includes a processing box 2 serving as a processing chamber, a cup 3 provided in the processing box 2, and a substrate W in the cup 3. A table 4 that is supported in a horizontal state and a rotating mechanism 5 that rotates the table 4 in a horizontal plane are provided. Furthermore, the substrate processing apparatus 1 includes a first processing liquid supply unit 6 that supplies a first processing liquid to the surface of the substrate W on the table 4, and a second processing liquid on the surface of the substrate W on the table 4. A second processing liquid supply unit 7 to be supplied, a heating unit 8 that heats the substrate W on the table 4, a moving mechanism 9 that moves the heating unit 8, and a plurality of temperature detection units that detect the temperature of the substrate W 10 and a control unit 11 for controlling each unit.

  The cup 3 is formed in a cylindrical shape, and encloses the table 4 from the periphery and accommodates it inside. The upper part of the peripheral wall of the cup 3 is inclined toward the inside in the radial direction, and is opened so that the substrate W on the table 4 is exposed. The cup 3 receives the processing liquid that has flowed down or scattered from the rotating substrate W. A discharge pipe (not shown) for discharging the received processing liquid is provided at the bottom of the cup 3.

  The table 4 is positioned near the center in the cup 3 and is provided so as to be rotatable in a horizontal plane. The table 4 has a plurality of support members 4a such as pins, and these support members 4a hold a substrate W such as a wafer or a liquid crystal substrate in a detachable manner.

  The rotating mechanism 5 includes a rotating shaft coupled to the table 4 and a motor (none of which is shown) serving as a driving source for rotating the rotating shaft, and the table 4 is driven by the motor via the rotating shaft. Rotate. The rotation mechanism 5 is electrically connected to the control unit 11, and the driving thereof is controlled by the control unit 11.

  The first processing liquid supply unit 6 includes a nozzle 6 a that discharges the first processing liquid from an oblique direction with respect to the surface of the substrate W on the table 4, and the substrate W on the table 4 from the nozzle 6 a. A first treatment liquid, for example, a sulfuric acid solution for removing the resist (a sulfuric acid solution containing persulfuric acid) is supplied to the surface of the substrate. The nozzle 6 a is mounted on the upper part of the peripheral wall of the cup 3, and its angle and discharge flow rate are adjusted so that the first processing liquid is supplied near the center of the surface of the substrate W. The first processing liquid supply unit 6 is electrically connected to the control unit 11, and the driving thereof is controlled by the control unit 11. The first processing liquid supply unit 6 includes a tank that stores the first processing liquid, a pump that is a driving source, a valve that is an adjustment valve that adjusts the supply amount (none of which are shown), and the like. .

  Here, as the first treatment liquid, in addition to the sulfuric acid solution, for example, ozone, hydrogen peroxide, hypochlorous acid, chlorous acid, chloric acid, perchloric acid, peroxomonosulfuric acid, peroxodisulfuric acid, etc. It is possible to use an oxidizing solution containing.

  The second processing liquid supply unit 7 includes a nozzle 7 a that discharges the second processing liquid from an oblique direction with respect to the surface of the substrate W on the table 4, and the substrate W on the table 4 from the nozzle 7 a. A second treatment liquid, for example, pure water for cleaning treatment (ultra pure water) is supplied to the surface of the substrate. The nozzle 7 a is mounted on the upper part of the peripheral wall of the cup 3, and its angle and discharge flow rate are adjusted so that the second processing liquid is supplied near the center of the surface of the substrate W. The second processing liquid supply unit 7 is electrically connected to the control unit 11, and its driving is controlled by the control unit 11. The second processing liquid supply unit 7 includes a tank that stores the second processing liquid, a pump that serves as a drive source, a valve that serves as an adjustment valve that adjusts the supply amount (none of which are shown), and the like. .

  The heating unit 8 includes a plurality of lamps 8a, is provided above the table 4, and irradiates the surface of the substrate W on the table 4 with light when each lamp 8a is turned on. The heating unit 8 is configured to be movable in the vertical direction (lifting direction) by the moving mechanism 9, and the irradiation position close to the cup 3 (position close to the surface of the substrate W as shown by the solid line in FIG. 1). ) And a standby position separated from the cup 3 by a predetermined distance (position separated from the surface of the substrate W as indicated by a one-dot chain line in FIG. 1). The heating unit 8 is electrically connected to the control unit 11, and its driving is controlled by the control unit 11.

  Here, as the heating unit 8, for example, a straight tube type lamp 8a provided in parallel, a plurality of light bulb type lamps 8a provided in an array, or a heater plate may be used. Is possible. As the lamp 8a, for example, a halogen lamp or a xenon flash lamp can be used.

  Each lamp 8a emits light having a wavelength that is absorbed by the substrate W and passes through the processing liquid. This light is absorbed by the substrate W, but has a wavelength that allows the treatment liquid to pass through without being absorbed by the treatment liquid. By such light irradiation, only the substrate W is heated until the processing liquid is supplied to the substrate W, but even after the processing liquid is supplied to the substrate W, only the substrate W is heated.

  The moving mechanism 9 includes a holding unit that holds the heating unit 8, a mechanism that moves the holding unit in the up-and-down direction, a motor (not shown) that serves as a driving source, and the like. At the same time, the heating unit 8 is moved. The moving mechanism 9 is electrically connected to the control unit 11, and its driving is controlled by the control unit 11.

  Each temperature detection unit 10 is separated from the table 4 between the substrate W supported by each support member 4a on the table 4 and the table 4 so as not to rotate together with the rotation of the table 4 (separated from the table 4). The temperature of the substrate W held by the holding member 10a and supported by the supporting members 4a on the table 4 is detected. These temperature detection units 10 are electrically connected to the control unit 11 and transmit the detected substrate temperature to the control unit 11 as substrate temperature information. In addition, as each temperature detection part 10, it is possible to use a radiation thermometer etc., for example.

  Here, the first of each temperature detection unit 10 is provided at a position for detecting the temperature near the center of the back surface of the substrate W on each support member 4a, and the second is the substrate W on each support unit 4a. It is provided at a position for detecting the temperature near the center of the radius on the back surface of. The third one is provided at a position for detecting the temperature near the periphery of the back surface of the substrate W on each support portion 4a. In FIG. 1, the number of temperature detection units 10 is three, but this number is an example and is not particularly limited.

  Each temperature detection unit 10 is arranged on a straight line extending in the radial direction along the surface of the substrate W on the table 4. However, the arrangement of the temperature detection units 10 is not limited to a straight line, and for example, may be alternately arranged so as to cross the straight line, and the circumference of three circles having different diameters on the surface of the substrate W It only has to be arranged on each.

  Each temperature detection unit 10 is configured not to rotate with the table 4, but is not limited thereto, and may be provided to rotate with the table 4. In this case, each temperature detection unit 10 is arranged on a straight line extending in the radial direction along the surface of the substrate W on the support unit 4.

  The control unit 11 includes a microcomputer that centrally controls each unit and a storage unit that stores substrate processing information and various programs related to substrate processing. The control unit 11 controls the rotation mechanism 5, the first processing liquid supply unit 6, the second processing liquid supply unit 7, the heating unit 8, the moving mechanism 9, and the like based on the substrate processing information and various programs. The first processing liquid supply unit 6 supplies the first processing liquid, the second processing liquid supply unit 7 supplies the second processing liquid to the surface of the substrate W on the table 4 inside, and the heating unit 8. Controls irradiation (heating) by the.

  Next, substrate processing (substrate processing method) performed by the above-described substrate processing apparatus 1 will be described with reference to FIG. The substrate W is set on the table 4 and the preparation is completed. In addition, the heating unit 8 is on standby at a standby position (see a one-dot chain line in FIG. 1) that is a predetermined distance away from the cup 3, and is not lit.

  As shown in FIG. 2, first, the control unit 11 controls the rotation mechanism 5 to rotate the table 4 at a predetermined number of rotations (step S1). Next, the control unit 11 controls the moving mechanism 9 to lower the heating unit 8 from the standby position to the irradiation position, and further controls the heating unit 8 to turn on each lamp 8a of the heating unit 8 and rotate the table 4. The upper substrate W is heated (step S2).

  At this time, the heating unit 8 can increase the temperature of the substrate W to 100 degrees or more in several seconds (for example, 10 seconds). In addition, since the heating unit 8 moves from the standby position to the irradiation position and approaches the surface of the substrate W on the table 4, only the substrate W can be efficiently heated. The heat supply to can be suppressed. In order to reach a high temperature in a short time, it is desirable to use the heating unit 8 having a peak intensity at a wavelength of 500 to 10,000 nm, which is a wavelength that the substrate W absorbs heat. For this reason, the processing liquid on the substrate W (this processing liquid will be supplied in step S3 described later) does not absorb heat, and the heating unit 8 directly heats the substrate W.

  After step S2, when the temperature of the substrate W reaches a predetermined substrate temperature (for example, 100 ° C.), the control unit 11 controls the first processing liquid supply unit 6 to be placed on the surface of the substrate W on the rotating table 4. The supply of the first processing liquid, that is, the sulfuric acid solution is started from the first nozzle 6a (step S3). The sulfuric acid solution as the first treatment liquid is discharged from the first nozzle 6a toward the center of the substrate W on the rotating table 4, and spreads over the entire surface of the substrate W by the centrifugal force caused by the rotation of the substrate W. Go. As a result, the surface of the substrate W on the table 4 is covered with the sulfuric acid solution and processed. For reliable processing, the flow rate of the processing liquid to be supplied is in the range of 1000 ml / min or less, and in addition, the angle at which the processing liquid is discharged is within the range of 10 ° to 90 ° with respect to the surface of the substrate W. Is desirable.

  Here, the predetermined substrate temperature is set such that the first processing liquid supplied to the surface of the substrate W (the processing liquid on the surface side in contact with the surface of the substrate W) is equal to or higher than the predetermined temperature on the substrate surface. Yes. The substrate temperature is the temperature of the substrate, and the predetermined substrate temperature is the substrate temperature at which the first processing liquid becomes equal to or higher than the predetermined temperature on the substrate surface. The predetermined temperature is the temperature of the first processing liquid on the substrate surface, and the temperature at which the first processing liquid can favorably peel the resist from the surface of the substrate W, that is, the substrate processing efficiency. Is a temperature that improves. For example, if the predetermined temperature is 80 ° C., the predetermined substrate temperature is set to 100 ° C. Such a predetermined temperature varies depending on the type of the processing liquid, but is a temperature required to improve at least the substrate processing efficiency (for example, the processing performance of the processing liquid). The processing conditions such as the predetermined substrate temperature and the number of rotations of the table 4 are set in advance, but can be arbitrarily changed by the operator.

  After step S3, the control unit 11 controls the first processing liquid supply unit 6 and the heating unit 8, and adjusts the supply amount of the first processing liquid and the light irradiation amount to set the temperature of the substrate W to a predetermined substrate. While maintaining the temperature or higher, the first treatment liquid (the aforementioned sulfuric acid solution) is continuously supplied for a predetermined time (step S4). Even during the supply of the first processing liquid, the temperature of the substrate W is set at a predetermined temperature in order to keep the first processing liquid (the processing liquid on the surface side in contact with the surface of the substrate W) above the predetermined temperature on the surface of the substrate W. The substrate temperature is maintained above. Accordingly, the supply of the first processing liquid to the surface of the substrate W does not reduce the substrate temperature, that is, the substrate processing efficiency does not decrease. In this way, it is possible to perform the processing while adjusting the temperature of the substrate W by controlling the supply amount of the processing liquid and the irradiation amount of light, and the first processing liquid on the surface of the substrate W is kept at a predetermined temperature or higher. Can be maintained.

  For example, in the adjustment of the supply amount of the processing liquid, the control unit 11 controls the first processing liquid supply unit 6 according to the temperature of the substrate W detected by each temperature detection unit 10. Supply the treatment liquid so as to increase the liquid temperature by decreasing the supply amount or by controlling the first treatment liquid supply unit 6 and the heating unit 8 to increase the supply amount of the treatment liquid and increase the light irradiation amount. The amount and the irradiation amount of light are linked.

  Further, in adjusting the light irradiation amount (light quantity), the control unit 11 controls each lamp 8 a of the heating unit 8 according to the temperature of the substrate W detected by each temperature detection unit 10. For example, when the temperature at the center of the substrate is lower than a predetermined substrate temperature, the control unit 11 increases the light amount of the lamp 8a facing the center of the substrate, and conversely, when the temperature is too high (when a predetermined upper limit temperature is exceeded). ), The amount of light of the lamp 8a facing the central portion of the substrate is reduced. Similarly, when the temperature at the central portion of the substrate radius is lower than the predetermined substrate temperature, the amount of light of the lamp 8a facing the central portion of the substrate radius is increased, and conversely, when the temperature is too high, the lamp facing the central portion of the substrate radius. Reduce the amount of light 8a. When the temperature at the peripheral edge of the substrate is lower than the predetermined substrate temperature, the light amount of the lamp 8a facing the peripheral edge of the substrate is increased. Conversely, when the temperature is too high, the light amount of the lamp 8a facing the peripheral edge of the substrate is increased. cut back. In this way, the temperature of the substrate W can be individually adjusted depending on the location, and the surface temperature of the substrate W can be made uniform. Therefore, the first processing liquid (on the surface of the substrate W is formed on the surface of the substrate W). The surface-side treatment liquid in contact with the substrate can be maintained at a predetermined temperature or higher.

  In order to eliminate the temperature difference of the substrate W, not only the above-described control but also the installation density of the lamps 8a of the heating unit 8 may be changed depending on the location. For example, the installation density of the lamps 8a is increased at a location facing the peripheral edge of the substrate that is easily influenced by the ambient temperature of the substrate W and the temperature of the substrate W is likely to be lowered, and conversely, the temperature of the substrate W is hardly lowered. The installation density of the lamps 8a is made low at a location facing the central portion. Further, the installation density of the lamps 8a may be gradually increased from the center of the substrate W toward the periphery.

  After step S4, the control unit 11 stops supplying the first processing liquid, then controls the heating unit 8 to turn off the lamps 8a of the heating unit 8, and further controls the moving mechanism 9. The heating unit 8 is raised from the irradiation position to the standby position, and heating of the substrate W on the rotating table 4 is stopped (step S5).

  After step S5, the control unit 11 controls the second processing liquid supply unit 7 to supply the second processing liquid, that is, ultrapure water from the second nozzle 7a to the surface of the substrate W on the rotating table 4. Supply for a predetermined time (step S6). The ultrapure water as the second treatment liquid is discharged from the second nozzle 7a toward the center of the substrate W on the rotating table 4, and spreads over the entire surface of the substrate W by the centrifugal force generated by the rotation of the substrate W. To go. As a result, the surface of the substrate W on the table 4 is covered and cleaned with the ultrapure water.

  After step S6, the control unit 11 stops the supply of the second processing liquid and then continues the rotation of the table 4 by the rotation mechanism 5 for a predetermined time, and the surface of the substrate W on the table 4 by swinging off by the rotation. Is finally dried (step S7). Finally, the rotation mechanism 5 is controlled to stop the rotation of the substrate W (step S8), and the processing is completed. In the drying of the substrate W, the ultrapure water remaining on the surface of the substrate W is scattered by the centrifugal force generated by the rotation of the substrate W and collected by the cup 3. After this drying process, the substrate W is removed from each support member 4a of the table 4 and carried out.

  In such a substrate processing step, the substrate W is heated to a predetermined substrate temperature or higher by irradiation with the heating unit 8 before supplying the first processing liquid. For this reason, when the first processing liquid is supplied to the surface of the substrate W, the heat of the substrate W is transmitted to the first processing liquid, and the first processing liquid on the surface side in contact with the surface of the substrate W is instantaneously generated. Be warmed up. Accordingly, the temperature of the first processing liquid can be reliably set to a predetermined temperature (for example, 80 ° C.) or higher on the surface of the substrate W, so that the substrate processing efficiency can be improved.

  Here, the substrate W is heated to a predetermined substrate temperature or higher so that the processing liquid reaches a predetermined temperature or higher on the substrate surface. At this time, it is important that the entire processing liquid supplied to the substrate W does not become a predetermined temperature or more at once, but at least a portion in contact with the surface of the substrate W reaches a predetermined temperature. That is, the substrate processing apparatus 1 is a processing apparatus that heats the processing liquid and performs resist stripping, and is not a drying apparatus that uses the Leidenfrost phenomenon. For this reason, unlike the Leidenfrost phenomenon, the processing liquid is heated in order from the portion in contact with the surface of the substrate W.

  More specifically, although the processing liquid supplied to the substrate W is irradiated with light from each lamp 8a of the heating unit 8 disposed above the processing liquid, since the light passes through the processing liquid, the surface of the substrate W is only used. It is heated from the part which touches. For this reason, the reaction of the processing liquid occurs at a portion in contact with the surface of the substrate W, and the reaction acts extremely effectively on the resist peeling. On the other hand, if the entire processing solution is heated at once, the reaction of the entire processing solution proceeds at a stretch, and even if the processed processing solution has contacted the surface of the substrate W, it is effective for resist stripping. Does not work.

  Further, it is not necessary to preheat the first processing liquid, and the first processing liquid is heated on the surface of the substrate W, that is, at a place where a reaction is required, so that the temperature of the first processing liquid is The substrate processing efficiency can be reliably improved without lowering in the middle of the flow path. Further, since it is not necessary to use a large amount of the processing liquid in order to increase the temperature of the substrate W with the processing liquid as in the prior art, the amount of the processing liquid used can be suppressed.

  In addition, when the treatment liquid is heated and supplied in advance, the oxidizing substance in the oxidizing solution such as hydrogen peroxide or peroxomonosulfuric acid reacts to reduce the concentration of the oxidizing substance. End up. However, by heating the processing liquid on the substrate W as described above, it is possible to delay the start of the reaction compared to the case where the processing liquid is heated and supplied in advance, and to suppress a decrease in the substrate processing performance of the processing liquid. It becomes. Further, it is not necessary to form a nozzle or a pipe for supplying the processing liquid to the substrate W with a heat resistant member, and the cost can be reduced.

  Further, when the substrate W is not heated, the processing liquid supplied near the center of the substrate flows toward the peripheral edge of the substrate by centrifugal force while the heat is deprived by the substrate W and the surrounding atmosphere. For this reason, a temperature difference occurs between the central portion of the substrate and the peripheral portion of the substrate, and non-uniformity in substrate processing efficiency occurs on the substrate surface. However, when the substrate W itself is heated as described above, since the processing liquid is directly heated on the substrate W, the temperature of the processing liquid is not different between the central portion of the substrate and the peripheral portion of the substrate. It is possible to suppress non-uniformity in substrate processing efficiency due to a temperature difference on the substrate surface.

  Further, even during the supply of the processing liquid, the temperature of the substrate W is maintained so that the processing liquid on the surface of the substrate (the processing liquid on the surface side in contact with the surface of the substrate W) is maintained at a predetermined temperature or higher. Therefore, since the substrate temperature does not decrease due to the supply of the processing liquid to the surface of the substrate W, that is, the substrate processing efficiency does not decrease, the substrate processing efficiency can be reliably improved. Furthermore, since the temperature of the substrate W can be individually adjusted depending on the location and the surface temperature of the substrate W can be made uniform, the non-uniformity in the substrate processing efficiency due to the temperature difference on the substrate surface can be more reliably suppressed. Can do.

  Depending on the type of processing liquid, the concentration of the processing liquid gradually decreases by heating. However, by warming the substrate W, the reaction starts on the substrate W, and the deterioration of the processing liquid due to heating is minimized. Therefore, the processing performance and the life of the processing liquid can be improved. For example, an oxidizing solution as a treatment liquid is a solution that starts a reaction by heating, and when the reaction starts, the concentration of an oxidizing substance in the oxidizing solution decreases. For this reason, the substrate processing performance of the processing liquid is lowered, and the processing liquid cannot be recovered and reused. Therefore, the oxidizing solution is heated on the surface of the substrate W to react with the oxidizing substance, and further, the oxidizing solution concentration is continuously supplied to the surface, so that the processing can be performed without extremely reducing the oxidizing substance concentration. It can be carried out. Further, the oxidizing solution can be recovered while maintaining the concentration of the oxidizing solution that can be recovered and reused.

  However, when the concentration of the processing liquid gradually decreases due to heating, which greatly affects the decrease in substrate processing efficiency, it is desirable to adjust the supply amount of the processing liquid according to the change in the concentration of the processing liquid. In this case, for example, the relationship between the concentration of the processing liquid at a predetermined substrate temperature and the elapsed time is obtained in advance, and from the start of supply so that the concentration of the processing liquid on the substrate W is constant at the predetermined substrate temperature. The supply amount of the processing liquid is adjusted according to the elapsed time (for example, the supply amount is gradually increased).

  Further, when the temperature of the processing liquid is higher than the predetermined temperature to some extent, for example, several tens of degrees, the condition (maintenance condition) is that the temperature of the processing liquid on the surface side in contact with the surface of the substrate W is maintained above the predetermined temperature. Thus, even if the temperature of the substrate W is somewhat lowered, the substrate processing efficiency does not decrease. In such a case, it is also possible to adjust the amount of light irradiation according to the change in the concentration of the processing liquid. For example, in an elapsed time from the start of supply so as to suppress a decrease in the concentration of the processing liquid on the substrate W. Accordingly, it is possible to gradually reduce the irradiation amount while maintaining the above-mentioned maintenance conditions.

  As described above, according to the first embodiment, the surface of the substrate W is irradiated with light absorbed by the substrate W and transmitted through the processing liquid, and the processing liquid on the surface of the substrate W is subjected to substrate processing efficiency. By heating the substrate W so as to be a predetermined temperature (for example, 80 ° C.) or higher, the processing liquid supplied to the surface of the substrate W (the processing liquid in contact with the surface of the substrate W) is the surface of the substrate. It can be warmed to above the predetermined temperature. As described above, the temperature of the processing liquid on the surface of the substrate W can be surely set to a predetermined temperature or more, and the processing liquid supplied to the surface of the substrate W is affected by the temperature of the substrate W and is reduced. Since it is eliminated, the substrate processing efficiency can be improved. Furthermore, since it is not necessary to use a large amount of the processing liquid in order to raise the temperature of the substrate W by the processing liquid, the amount of the processing liquid used can be suppressed.

  In particular, by controlling either or both of the supply of the treatment liquid and the irradiation of light so as to maintain the temperature of the treatment liquid on the surface side in contact with the surface of the substrate W at a predetermined temperature or more, for example, the supply of the treatment liquid The surface that is in contact with the surface of the substrate W by adjusting the amount and the amount of light irradiation (for example, to increase the liquid temperature, decrease the supply amount of the processing liquid or increase the amount of light irradiation). Since the temperature of the processing solution on the side can be reliably maintained at a predetermined temperature or higher, the substrate processing efficiency can be improved and the amount of processing solution used can be more reliably realized.

  Further, by starting the heating by light irradiation prior to the supply of the processing liquid, the temperature of the substrate W can be obtained without using a high-power heating unit that instantaneously raises the temperature of the substrate W as the heating unit 8. Since the temperature of the processing liquid on the surface side in contact with the surface of the substrate W can be set to a predetermined temperature or higher, for example, the number of lamps 8a of the heating unit 8 can be reduced. Thus, simplification of the apparatus and cost reduction can be realized. Furthermore, it is possible to preheat the surrounding atmosphere in addition to the substrate W, and it is possible to reliably suppress the surrounding atmosphere from taking heat away from the processing liquid. As a result, the temperature of the processing liquid on the surface of the substrate W can be increased to a predetermined temperature or more in a shorter time, so that the processing time can be shortened in addition to the reduction in the amount of processing liquid used.

(Second Embodiment)
A second embodiment will be described with reference to FIG.

  The second embodiment is basically the same as the first embodiment. Therefore, in the second embodiment, differences from the first embodiment will be described, the same parts as those described in the first embodiment will be denoted by the same reference numerals, and the description thereof will also be omitted.

  As shown in FIG. 3, in the substrate processing apparatus 1 according to the second embodiment, the nozzle 6 a of the first processing liquid supply unit 6 and the nozzle 7 a of the second processing liquid supply unit 7 are in the heating unit 8. Is provided. These nozzles 6 a and 7 a are formed so as to be able to supply respective fluids (first processing liquid or second processing liquid) to the surface of the substrate W on the table 4. In addition, as the material of each nozzle 6a and 7a, the material which does not deform | transform by heat is used, For example, it is possible to use materials, such as quartz which does not deform | transform even if it heats with each lamp | ramp 8a of the heating part 8. FIG.

  In such a substrate processing apparatus 1, since each nozzle 6a and 7a is located immediately above the substrate W on the table 4, even if the flow rate when supplying the processing liquid is slow, the processing liquid is easily supplied to the center of the substrate. can do. Further, since the surface of the substrate W can be coated with the processing liquid even if the flow rate of the processing liquid to be supplied is reduced, the amount of the processing liquid used can be reduced.

  As described above, according to the second embodiment, the same effect as that of the first embodiment can be obtained. Furthermore, by providing the nozzles 6a and 7a in the heating unit 8, the processing liquid can be easily supplied to the center of the substrate even when the flow rate when supplying the processing liquid is slow. In addition, the flow rate of the processing liquid can be reduced, and the amount of processing liquid used can be reduced.

  As mentioned above, although some embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. For example, the supply of the first treatment liquid, the second treatment liquid, and the like has been described in the embodiment in which the respective supply times do not overlap, but may partially overlap. The above-described novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 5 Rotating mechanism 6 1st process liquid supply part 8 Heating part 10 Temperature detection part 11 Control part W Substrate

Claims (8)

A treatment liquid supply unit for supplying a treatment liquid to the surface of the substrate;
A heating unit that heats the substrate by irradiating the surface of the substrate with light absorbed by the substrate and passing through the treatment liquid;
A substrate processing apparatus comprising: A temperature detection unit for detecting the temperature of the substrate heated by the heating unit;
In accordance with the temperature of the substrate detected by the temperature detection unit, the processing liquid supply unit and the heating are performed so as to maintain the processing liquid on the surface side in contact with the surface of the substrate at a predetermined temperature or higher at which substrate processing efficiency is improved. A control unit for controlling one or both of the units;
The substrate processing apparatus according to claim 1, further comprising:   The substrate processing apparatus according to claim 2, wherein the control unit causes the heating unit to start irradiating light on the surface of the substrate before supplying the processing liquid by the processing liquid supply unit. A rotation mechanism for rotating the substrate in a plane;
The control unit causes the processing liquid supply unit to supply a processing liquid to the surface of the substrate and rotates the heating unit to irradiate the surface of the substrate while the substrate is rotated by the rotation mechanism. The substrate processing apparatus according to claim 2 or 3, wherein Supplying a treatment liquid to the surface of the substrate;
Irradiating the surface of the substrate with light that is absorbed by the substrate and transmitted through the treatment liquid, and heating the substrate;
A substrate processing method comprising: Detecting the temperature of the heated substrate;
In accordance with the detected temperature of the substrate, the supply of the processing liquid to the surface of the substrate and the surface of the substrate so as to maintain the processing liquid on the surface side in contact with the surface of the substrate at a predetermined temperature or higher that improves the substrate processing efficiency Controlling either or both of light irradiation to
The substrate processing method according to claim 5, further comprising:   The substrate processing method according to claim 5, wherein the step of heating the substrate is started before the step of supplying the processing liquid. In the step of supplying the processing liquid, the processing liquid is supplied to the surface of the substrate while rotating the substrate in a plane,
8. The substrate processing method according to claim 5, wherein, in the step of heating the substrate, the surface of the substrate is irradiated with light while the substrate is rotated in a plane.

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