TW201511118A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

A substrate processing apparatus (1) according to one embodiment of the present invention is provided with: a process liquid supply unit (6) for supplying a process liquid to the surface of a substrate (W); and a heating unit (8) for heating the substrate (W) by irradiating the surface of the substrate (W) with light which is transmitted through the process liquid and is absorbed by the substrate (W). Consequently, the substrate processing efficiency is improved and the amount of the process liquid used is suppressed by heating the surface of the substrate (W) with light which is transmitted through the process liquid and is absorbed by the substrate (W).

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method.

The substrate processing apparatus is a device that processes a surface of a substrate by supplying a processing liquid (for example, a photoresist stripping solution or a cleaning liquid) to a surface of a substrate such as a wafer or a liquid crystal substrate in a manufacturing process such as a semiconductor or a liquid crystal panel. . In the supply of the treatment liquid by the substrate processing apparatus, in order to improve the substrate processing efficiency, it is proposed to heat the treatment liquid in advance, and to treat the substrate surface of the substrate by the nature of the treatment liquid or the heat.

Here, the final temperature of the treatment liquid by the above heating, that is, the liquid temperature required to increase the processing efficiency of the substrate, varies depending on the type of the treatment liquid, for example, using SPM (a mixture of sulfuric acid and hydrogen peroxide water) When it is used as a treatment liquid, the SPM is heated until its liquid temperature becomes about 80 ° C, and then supplied to the surface of the substrate.

However, even if the treatment liquid heated in advance is supplied to the surface of the substrate, the temperature of the treatment liquid is lowered by the influence of the temperature of the substrate and its surrounding atmosphere (any temperature is about room temperature). That is, since the heat of the treatment liquid is carried away by the substrate or its surrounding atmosphere, the temperature of the treatment liquid becomes low, so the substrate treatment effect The rate drops. Further, since the treatment liquid heated in advance is supplied to the surface of the substrate through a pipe or the like, the temperature of the treatment liquid is lowered during this period, and the substrate treatment efficiency is still lowered.

Here, when the processing liquid heated in advance is supplied to the substrate, the temperature of the substrate and its surrounding atmosphere gradually rises. Therefore, it is necessary to continuously supply the processing liquid for a long period of time, so that the processing liquid is used in a large amount.

The problem to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method which can improve the processing efficiency of the substrate and suppress the amount of the processing liquid used.

The substrate processing apparatus of the embodiment includes a processing liquid supply unit that supplies a processing liquid to the surface of the substrate, and a heating unit that heats the substrate by irradiating the surface of the substrate with light that is absorbed by the substrate and transmitted through the processing liquid.

The substrate processing method of the embodiment includes a process of supplying a treatment liquid for the treatment liquid to the surface of the substrate, and a process of heating the substrate by irradiating the surface of the substrate with light that is absorbed by the substrate and transmitted through the treatment liquid.

According to the substrate processing apparatus or the substrate processing method described above, it is possible to improve the substrate processing efficiency and suppress the amount of the processing liquid used.

1‧‧‧Substrate processing unit

2‧‧‧Processing box

3‧‧‧ cup body

4‧‧‧ platform

4a‧‧‧Support members

5‧‧‧Rotating mechanism

6‧‧‧1st treatment liquid supply unit

6a‧‧‧ nozzle

7‧‧‧Second treatment liquid supply unit

7a‧‧‧Nozzles

8‧‧‧ heating department

8a‧‧‧lights

9‧‧‧Mobile agencies

10‧‧‧ Temperature Detection Department

10a‧‧‧Retaining components

11‧‧‧Control Department

W‧‧‧ wafer

Fig. 1 is a view showing a schematic configuration of a substrate processing apparatus according to a first embodiment.

2 is a flow chart of a substrate processing process according to the first embodiment; flow chart.

3 is a view showing a schematic configuration of a substrate processing apparatus according to a second embodiment.

(first embodiment)

The first embodiment will be described with reference to Figs. 1 and 2 .

As shown in Fig. 1, the substrate processing apparatus 1 of the first embodiment includes a processing chamber 2 as a processing chamber, a cup 3 provided in the processing chamber 2, and a horizontal state in the cup 3 thereof. A platform 4 supporting the substrate W, and a rotating mechanism 5 for rotating the stage 4 in a horizontal plane. Further, the substrate processing apparatus 1 includes a first processing liquid supply unit 6 that supplies the first processing liquid to the surface of the substrate W on the stage 4, and a second processing liquid that supplies the second processing liquid to the surface of the substrate W on the stage 4. The supply unit 7 and the heating unit 8 of the substrate W on the heating stage 4, and the moving mechanism 9 for moving the heating unit 8, and the plurality of temperature detecting units 10 for detecting the temperature of the substrate W, and the control unit 11 for controlling the respective units .

The cup 3 is formed in a cylindrical shape and is housed inside by surrounding the platform 4 from the periphery. The upper portion of the peripheral wall of the cup 3 is inclined toward the inner side in the radial direction, and the substrate W opened on the stage 4 is exposed. The cup 3 picks up a treatment liquid that flows or scatters from the rotating substrate W. Further, at the bottom of the cup 3, a discharge pipe (not shown) for discharging the received processing liquid is provided.

The platform 4 is positioned near the center of the cup 3 and is configured to rotate in a horizontal plane. The platform 4 has a support member such as a plurality of pins 4a, the substrate W such as a wafer or a liquid crystal substrate is detachably held by the support members 4a.

The rotation mechanism 5 has a rotation shaft coupled to the stage 4 or a motor (which is not shown) that is a drive source for rotating the rotation shaft, and the table 4 is rotated by the rotation shaft by driving of the motor. The rotation mechanism 5 is electrically connected to the control unit 11, and its drive is controlled by the control unit 11.

The first processing liquid supply unit 6 has a nozzle 6a that discharges the first processing liquid from the surface of the substrate W on the stage 4 in an oblique direction, and supplies a first processing liquid such as a photoresist to the surface of the substrate W on the stage 4 from the nozzle 6a. A sulfuric acid solution for stripping treatment (sulfuric acid solution containing persulfuric acid). The nozzle 6a is attached to the upper portion of the peripheral wall of the cup 3, and the angle, the discharge flow rate, and the like are adjusted so that the first processing liquid is supplied near the center of the surface of the substrate W. The first processing liquid supply unit 6 is electrically connected to the control unit 11, and the driving thereof is controlled by the control unit 11. In addition, the first processing liquid supply unit 6 includes a pump that stores a liquid tank or a driving source of the first processing liquid, and a regulating valve that adjusts the supply amount (none of which is not shown).

Here, as the first treatment liquid, in addition to the sulfuric acid solution, for example, ozone, hydrogen peroxide or hypochlorous acid, chlorous acid, chloric acid, perchloric acid, peroxymonosulfuric acid, peroxodisulfuric acid or the like can be used. Oxidizing solution.

The second processing liquid supply unit 7 has a nozzle 7a that discharges the second processing liquid from the surface of the substrate W on the stage 4 in an oblique direction, and supplies the second processing liquid to the surface of the substrate W on the stage 4 from the nozzle 7a, for example, for cleaning. Pure water for treatment (ultra-pure water). The nozzle 7a is mounted on the upper portion of the peripheral wall of the cup 3, and its angle or discharge flow rate is adjusted to be in the surface of the substrate W. The second treatment liquid is supplied near the heart. The second processing liquid supply unit 7 is electrically connected to the control unit 11, and the driving thereof is controlled by the control unit 11. In addition, the second processing liquid supply unit 7 includes a pump that stores a liquid tank or a driving source of the second processing liquid, and a regulating valve that adjusts the supply amount (none of which is not shown).

The heating unit 8 has a plurality of lamps 8a disposed above the stage 4, and the surfaces of the substrates W on the stage 4 are illuminated by the lighting of the lamps 8a. The heating unit 8 is configured to be movable in the vertical direction (elevating direction) by the moving mechanism 9, and is close to the surface of the substrate W from the irradiation position close to the cup 3 (as shown in FIG. 1). The position is moved from a standby position (a position spaced apart from the surface of the substrate W as shown by a dot chain line in FIG. 1) from the cup body 3 at a predetermined distance. The heating unit 8 is electrically connected to the control unit 11 and its driving is controlled by the control unit 11.

Here, as the heating unit 8, for example, a plurality of straight tube type lamps 8a may be provided in parallel, or a plurality of lamp type lamps 8a may be arranged in an array, or a heating plate or the like. Further, as the lamp 8a, for example, a halogen lamp or a xenon flash lamp or the like can be used.

Each of the lamps 8a illuminates light of a wavelength absorbed by the substrate W and transmitted through the processing liquid. Although this light is absorbed by the substrate W, it is not absorbed by the treatment liquid and has a wavelength of the treatment liquid. By the irradiation of such light, only the substrate W is heated until the processing liquid is supplied to the substrate W, and even after the processing liquid is supplied to the substrate W, only the substrate W is heated.

The moving mechanism 9 has a holding portion that holds the heating portion 8, or a mechanism that moves the holding portion in the lifting direction, a motor that is a driving source (none of which is not shown), and the like, and is driven and moved together with the holding portion by the driving of the motor. unit 8. The moving mechanism 9 is electrically connected to the control unit 11, and its driving is controlled by the control unit 11.

Each of the temperature detecting portions 10 is held between the substrate W and the stage 4 supported by the respective supporting members 4a on the stage 4 so as not to rotate together with the rotation of the stage 4 (in a state separated from the stage 4). The member 10a is held to detect the temperature of the substrate W supported by each of the support members 4a on the stage 4, respectively. The temperature detecting units 10 are electrically connected to the control unit 11, and are respectively sent to the control unit 11 with the substrate temperature information. Further, as the temperature detecting unit 10, for example, a radiation thermometer or the like can be used.

Here, the first one of the temperature detecting portions 10 is provided at a temperature near the center of the back surface of the substrate W on each of the support members 4a, and the second one is disposed on the back surface of the substrate W on each of the support portions 4a. The position of the temperature near the center of the radius. Further, the third portion is disposed at a position at which the temperature near the periphery of the back surface of the substrate W on each of the support portions 4a is detected. Further, in FIG. 1, the number of the temperature detecting units 10 is three, but the number is an example and is not particularly limited.

Further, each of the temperature detecting portions 10 is disposed on a straight line extending in the radial direction along the surface of the substrate W on the stage 4. However, the arrangement of the temperature detecting units 10 is not limited to a straight line. For example, even if they are arranged alternately across the line, the surface of the substrate W may be disposed on the circumference of three circles having different diameters. can.

Further, although the temperature detecting unit 10 is configured not to rotate together with the stage 4, the present invention is not limited thereto, and may be provided to rotate together with the stage 4. At this time, each temperature detecting portion 10 is disposed on a straight line extending in the radial direction along the surface of the substrate W on the support portion 4.

The control unit 11 includes a microcomputer that centrally controls each unit, and a memory unit that memorizes substrate processing information or various programs related to substrate processing. The control unit 11 controls the rotation mechanism 5, the first processing liquid supply unit 6, the second processing liquid supply unit 7, the heating unit 8, the moving mechanism 9, and the like based on the substrate processing information or various programs, and the platform 4 is rotated. The surface of the substrate W is controlled by the first processing liquid supply unit 6 supplying the first processing liquid, the second processing liquid supply unit 7 for supplying the second processing liquid, and the heating unit 8 for irradiation (heating). .

Next, the substrate processing (substrate processing method) performed by the substrate processing apparatus 1 will be described with reference to FIG. 2 . Further, the substrate W is placed on the stage 4, and is prepared before completion. In addition, the heating unit 8 stands by at a standby position (see one dot chain line in FIG. 1) which is spaced apart from the cup body 3 by a predetermined distance, and is in a state of no lighting.

As shown in Fig. 2, first, the control unit 11 controls the rotation mechanism 5 and rotates the stage 4 by a predetermined number of rotations (step S1). Next, the control unit 11 controls the moving mechanism 9 to lower the heating unit 8 from the standby position to the irradiation position, and controls the heating unit 8 to turn on the lamps 8a of the heating unit 8 to heat the substrate W on the rotating platform 4 ( Step S2).

At this time, the heating unit 8 can set the temperature of the substrate W to 100 degrees or more in a few seconds (for example, 10 seconds). Further, since the heating portion 8 moves from the standby position to the irradiation position and is close to the surface of the substrate W on the stage 4, it is possible to efficiently heat only the substrate W, and it is possible to suppress heat supply to the substrate W. The case of other components than others. Further, in order to reach a high temperature in a short time, it is preferable to use the heating portion 8 having a peak intensity at a wavelength of 500 to 1000 nm which is a wavelength at which the substrate W is thermally absorbed. Therefore, the processing liquid on the substrate W (the processing liquid is supplied in step S3 to be described later) is not thermally absorbed, and the heating unit 8 directly heats the substrate W.

After the step S2, when the temperature of the substrate W becomes a predetermined substrate temperature (for example, 100 ° C), the control unit 11 controls the first processing liquid supply unit 6 and starts the substrate W on the rotating table 4 from the first nozzle 6a. The first treatment liquid is supplied to the surface, that is, the supply of the sulfuric acid solution (step S3). The sulfuric acid solution as the first treatment liquid is discharged from the center of the substrate W on the rotating platform 4 from the first nozzle 6a, and spreads over the entire surface of the substrate W by the centrifugal force of the rotation of the substrate W. Accordingly, the surface of the substrate W on the stage 4 is treated by being covered with a sulfuric acid solution. In addition, in order to ensure the treatment, the flow rate of the supplied treatment liquid is set to be in the range of 1000 ml/min or less, and the angle of the discharge treatment liquid is preferably in the range of 10 to 90°.

Here, the predetermined substrate temperature is set so that the first processing liquid (the processing liquid on the surface side in contact with the surface of the substrate W) supplied to the surface of the substrate W has a predetermined temperature or higher on the surface of the substrate. The substrate temperature refers to the temperature of the substrate, and the predetermined substrate temperature refers to the substrate temperature at which the first treatment liquid has a predetermined temperature or higher on the substrate surface. In addition, the predetermined temperature means the temperature of the first processing liquid on the surface of the substrate, and the first processing liquid is a temperature at which the photoresist can be favorably peeled off from the surface of the substrate W, that is, a temperature at which the processing efficiency of the substrate is improved. For example, if the predetermined temperature is 80 ° C, the above is predetermined The substrate temperature was set to 100 °C. Such a predetermined temperature differs depending on the kind of the treatment liquid, but at least the temperature required to improve the substrate treatment efficiency (for example, the treatment performance of the treatment liquid). Further, although the processing conditions such as the predetermined substrate temperature or the number of rotations of the stage 4 are set in advance, the operator can arbitrarily change it by the operator.

After the step S3, the control unit 11 controls the first processing liquid supply unit 6 and the heating unit 8, and adjusts the supply amount of the first processing liquid or the irradiation amount of the light to maintain the temperature of the substrate W at a predetermined substrate temperature or higher. The first treatment liquid (the above-described sulfuric acid solution) is continuously supplied for a predetermined period of time (step S4). In the supply of the first treatment liquid, the temperature of the substrate W is maintained at a predetermined temperature or higher by setting the first treatment liquid (the treatment liquid on the surface side in contact with the surface of the substrate W) on the surface of the substrate W to a predetermined temperature or higher. Above the substrate temperature. Therefore, by supplying the first processing liquid to the surface of the substrate W, the substrate temperature is lowered, that is, the substrate processing efficiency is not lowered. In this manner, by controlling the supply amount of the processing liquid or the irradiation amount of the light, the temperature of the substrate W can be adjusted while the temperature of the substrate W is adjusted, and the first processing liquid on the surface of the substrate W can be maintained at a predetermined temperature or higher.

For example, in the adjustment of the supply amount of the processing liquid, the control unit 11 controls the first processing liquid supply unit 6 in response to the temperature of the substrate W detected by each temperature detecting unit 10, for example, reduces the supply amount of the processing liquid. In order to increase the liquid temperature, or to increase the amount of the treatment liquid to increase the amount of the treatment liquid to increase the amount of the treatment liquid, the supply amount of the treatment liquid and the irradiation amount of the light are linked.

Furthermore, in the adjustment of the amount of light irradiation (light amount), the control unit 11 Each of the lamps 8a of the heating unit 8 is controlled by the temperature detecting unit 10 in response to the temperature of the substrate W which is detected. For example, when the temperature of the center portion of the substrate is lower than a predetermined substrate temperature, the control unit 11 increases the amount of light of the lamp 8a facing the central portion of the substrate, and conversely when it is too high (when the predetermined upper limit temperature is exceeded), The amount of light of the lamp 8a facing the center of the substrate. Similarly, when the temperature of the central portion of the substrate radius is lower than the predetermined substrate temperature, the amount of light of the lamp 8a opposite to the central portion of the substrate radius is increased, and conversely, when the temperature is too high, the lamp 8a opposite to the central portion of the substrate radius is reduced. The amount of light. Further, when the temperature of the peripheral portion of the substrate is lower than the predetermined substrate temperature, the amount of light of the lamp 8a opposed to the peripheral portion of the substrate is increased, and conversely, when the temperature is too high, the amount of light of the lamp 8a opposed to the peripheral portion of the substrate is reduced. In this way, since the temperature of the substrate W is individually adjusted depending on the place, the surface temperature of the substrate W can be made uniform, so that the surface of the first processing liquid (the surface side in contact with the surface of the substrate W) can be treated on the surface of the substrate W. Liquid) is maintained above the established temperature.

Further, in order to eliminate the temperature difference of the substrate W, not only the above-described control, but also the installation density of each of the lamps 8a of the heating unit 8 may be changed depending on the location. For example, in a direction opposite to the peripheral edge portion of the substrate which is easily affected by the temperature of the substrate W and the temperature of the substrate W is likely to decrease, the installation density of the lamp 8a is increased, and conversely, the center portion of the substrate which is hard to fall with the temperature of the substrate W is formed. In the opposite direction, the setting density of the lamp 8a is lowered. Further, even if the density of the lamps 8a is gradually increased from the center of the substrate W toward the periphery.

After step S4, the control unit 11 stops supplying the first processing liquid. Thereafter, the heating unit 8 is controlled to extinguish the lamps 8a of the heating unit 8, and the moving mechanism 9 is controlled to raise the heating unit 8 from the irradiation position to the standby position, and the heating of the substrate W on the rotating platform 4 is stopped (step S5).

After the step S5, the control unit 11 controls the second processing liquid supply unit 7 to supply the second processing liquid, that is, ultrapure water, to the surface of the substrate W on the rotating table 4 from the second nozzle 7a at a predetermined time (step S6). ). The ultrapure water as the second treatment liquid is discharged from the center of the substrate W on the rotating table 4 from the second nozzle 7a, and spreads over the entire surface of the substrate W by the centrifugal force of the rotation of the substrate W. Accordingly, the surface of the substrate W on the stage 4 is washed by being covered with ultrapure water.

After the step S6, the control unit 11 continues to rotate the stage 4 by the rotation mechanism 5 from a predetermined time after the supply of the second processing liquid is stopped, and the surface of the substrate W on the stage 4 is dried by the rotation caused by the rotation of the stage 4 Drying (step S7), finally, the rotation mechanism 5 is controlled to stop the rotation of the substrate W (step S8), and the processing is ended. Further, in the drying of the substrate W, the ultrapure water remaining on the surface of the substrate W is scattered by the centrifugal force generated by the rotation of the substrate W, and is collected in the cup 3. After the drying process, the substrate W is removed from the support members 4a of the stage 4 and carried out.

In such a substrate processing process, the substrate W is heated to a predetermined substrate temperature or higher by irradiation of the heating unit 8 before the supply of the first processing liquid. Therefore, when the first processing liquid is supplied to the surface of the substrate W, the heat of the substrate W is transmitted to the first processing liquid, and the first processing liquid on the surface side in contact with the surface of the substrate W is instantaneously heated. According to this, the temperature of the first processing liquid can be surely set to a predetermined temperature on the surface of the substrate W (for example, Above 80 ° C), it can improve the substrate processing efficiency.

Here, the substrate W is heated to a predetermined substrate temperature or higher, and the processing liquid is at a predetermined temperature or higher on the substrate surface. At this time, the entire processing liquid supplied to the substrate W does not become a predetermined temperature or more at all, and it is important that at least a portion in contact with the surface of the substrate W has a predetermined temperature. In other words, the substrate processing apparatus 1 is a processing apparatus that performs a photoresist peeling or the like by heating the processing liquid, and is not a drying apparatus using a Leidenfrost phenomenon. Therefore, unlike the Leiden Frost phenomenon, in the treatment liquid, the portion in contact with the surface of the substrate W is sequentially heated.

When the details are described, the processing liquid supplied to the substrate W receives light from the respective lamps 8a of the heating unit 8 disposed above the processing liquid. However, since the light passes through the processing liquid, it is in contact with the surface of the substrate W. Part is heated. Therefore, the reaction of the treatment liquid is generated in a portion in contact with the surface of the substrate W, and the reaction acts extremely efficiently on the photoresist peeling. On the other hand, when the entire treatment liquid is heated at one time, the reaction of the entire treatment liquid is performed once, and even if the treatment liquid after the reaction is brought into contact with the surface of the substrate W, it does not effectively act on the peeling of the resist.

Further, since it is not necessary to heat the first treatment liquid in advance, the first treatment liquid is heated on the surface of the substrate W, that is, where the reaction is required, so that the temperature of the first treatment liquid does not decrease in the middle of the flow path. The substrate processing efficiency can be surely improved. Further, since it is not necessary to use a large amount of the treatment liquid in order to raise the temperature of the substrate W by the treatment liquid as in the related art, the amount of the treatment liquid used can be suppressed.

Further, when the treatment liquid is heated and supplied in advance, the treatment liquid, for example, an oxidizing substance such as hydrogen peroxide water or an oxidizing solution such as peroxymonosulfuric acid, reacts, and the concentration of the oxidizing substance is lowered. However, when the treatment liquid is heated on the substrate W as described above, the start of the reaction can be delayed as compared with the case where the treatment liquid is heated in advance, and the substrate treatment performance of the treatment liquid is suppressed from being lowered. Further, it is not necessary to form a nozzle or a pipe or the like for supplying the processing liquid to the substrate W by the heat-resistant member, and the cost can be suppressed.

Further, when the substrate W is not heated, the processing liquid supplied to the vicinity of the center of the substrate is heated by the substrate W and its surrounding atmosphere, and flows to the peripheral edge portion of the substrate by centrifugal force. Therefore, a temperature difference is generated at the center portion of the substrate and the peripheral portion of the substrate, and substrate processing efficiency is uneven on the surface of the substrate. However, when the substrate W itself is heated as described above, since the treatment liquid is directly heated on the substrate W, the temperature of the treatment liquid does not differ between the center portion of the substrate and the peripheral portion of the substrate, and the surface of the substrate can be suppressed. The substrate processing efficiency caused by the temperature difference is not uniform.

Further, even in the supply of the processing liquid, the temperature of the substrate W is maintained such that the processing liquid on the surface of the substrate (the processing liquid on the surface side in contact with the surface of the substrate W) is maintained at a predetermined temperature or higher. Therefore, by supplying the processing liquid to the surface of the substrate W, the substrate temperature is lowered, that is, the substrate processing efficiency is not lowered, so that the substrate processing efficiency can be surely improved. Further, since the temperature of the substrate W can be individually adjusted depending on the place, and the surface temperature of the substrate W can be made uniform, it is possible to surely suppress the unevenness of the substrate processing efficiency due to the temperature difference of the substrate surface.

Moreover, due to the different types of treatment liquids, the concentration of the treatment liquid is increased. The heat is gradually lowered. However, by heating the substrate W, the start of the reaction is on the substrate W, and the deterioration of the treatment liquid due to heating can be minimized, and the treatment performance or the life of the treatment liquid can be improved. For example, the oxidizing solution as the treatment liquid is a solution in which the reaction is started by heating, and when the reaction starts, the concentration of the oxidizing substance in the oxidizing solution is lowered. Therefore, the substrate processing performance of the treatment liquid is lowered, and the treatment liquid cannot be recovered and reused. Here, the oxidizing solution is heated on the surface of the substrate W to react the oxidizing substance, and by continuously supplying the oxidizing solution to the surface, the oxidizing substance concentration can be prevented from being extremely lowered. Further, the oxidizing solution is recovered by maintaining the concentration of the oxidizing solution which can be recovered and reused.

However, when the concentration of the treatment liquid is gradually lowered by heating to greatly affect the decrease in the processing efficiency of the substrate, it is preferable to adjust the supply amount of the treatment liquid in response to the change in the concentration of the treatment liquid. In this case, for example, the relationship between the concentration of the treatment liquid and the elapsed time in the predetermined substrate temperature is obtained in advance, and the supply amount of the treatment liquid is adjusted from the elapsed time from the supply so that the treatment liquid on the substrate W at a predetermined substrate temperature The concentration becomes constant (for example, gradually increasing the supply amount).

In addition, when the temperature of the treatment liquid is higher than a predetermined temperature by, for example, several tens of degrees, the temperature of the treatment liquid on the surface side in contact with the surface of the substrate W is maintained at a predetermined temperature or higher (maintenance condition). Then, even if the temperature of the substrate W becomes somewhat lower, the substrate processing efficiency does not decrease. In this case, the amount of irradiation of the light may be adjusted in accordance with the change in the concentration of the treatment liquid, and for example, the substrate W may be suppressed in response to the elapsed time from the supply. The concentration of the treatment liquid on the upper side is lowered, and the above maintenance condition is maintained, and the irradiation amount is gradually reduced.

As described above, in the first embodiment, the surface of the substrate W is irradiated with the light absorbed by the substrate W and transmitted through the processing liquid, and the substrate W is heated to cause the processing liquid on the surface of the substrate W to be lifted. The processing liquid supplied to the surface of the substrate W (the processing liquid on the side in contact with the surface of the substrate W) is heated to a predetermined temperature or higher on the surface of the substrate, in accordance with the predetermined temperature (for example, 80 ° C). In this manner, since the temperature of the processing liquid can be surely set to a predetermined temperature or higher on the surface of the substrate W, the processing liquid supplied to the surface of the substrate W does not fall due to the temperature of the substrate W, so that the temperature is lowered. Can improve substrate processing efficiency. Further, since it is not necessary to use the treatment liquid in a large amount in order to raise the temperature of the substrate W by the treatment liquid, the amount of the treatment liquid used can be suppressed.

In particular, by controlling the supply of the processing liquid and the irradiation of the light, the temperature of the processing liquid on the surface side in contact with the surface of the substrate W is maintained at a predetermined temperature or higher, for example, by adjusting the supply amount of the processing liquid. Or the amount of irradiation of light (for example, in order to increase the liquid temperature, reduce the supply amount of the treatment liquid, or increase the amount of irradiation of light), the temperature of the treatment liquid on the surface side in contact with the surface of the substrate W can be surely maintained. When the temperature is higher than the predetermined temperature, the improvement of the substrate processing efficiency and the suppression of the amount of the processing liquid can be more reliably achieved.

In addition, by heating the light by the irradiation of the processing liquid, the heating unit 8 can be used as the heating unit 8 without using the heating unit that instantaneously turns the substrate W into a high temperature. Temperature becomes When the temperature of the treatment liquid on the surface side in contact with the surface of the substrate W is equal to or higher than a predetermined temperature, the number of the lamps 8a of the heating portion 8 can be reduced, and the simplification or cost reduction of the device can be achieved. Further, in addition to the substrate W, the surrounding atmosphere can be heated in advance, and the surrounding atmosphere can be surely prevented from taking heat away from the treatment liquid. According to this, since the temperature of the processing liquid can be set to a predetermined temperature or higher in the surface of the substrate W in a shorter period of time, the processing time can be shortened in addition to the reduction in the amount of the processing liquid used.

(Second embodiment)

The second embodiment will be described with reference to Fig. 3 .

The second embodiment is basically the same as the first embodiment. Therefore, in the second embodiment, the differences from the first embodiment will be described, and the same portions as those described in the first embodiment will be denoted by the same reference numerals, and the description thereof will be omitted.

As shown in FIG. 3, in the substrate processing apparatus 1 according to the second embodiment, the nozzle 6a of the first processing liquid supply unit 6 and the nozzle 7a of the second processing liquid supply unit 7 are provided in the heating unit 8. The nozzles 6a and 7a are formed to supply respective fluids (first processing liquid or second processing liquid) to the surface of the substrate W on the stage 4. Further, as the material of each of the nozzles 6a and 7a, a material which is not deformed by heat is used. For example, a material such as quartz which is not deformed by being heated by the lamps 8a of the heating unit 8 can be used.

In such a substrate processing apparatus 1, each nozzle 6a and 7a is located Since the substrate W on the stage 4 is directly above, even if the flow rate of the supply processing liquid is slow, the processing liquid can be easily supplied to the center of the substrate. Further, since the surface of the substrate W can be covered by the treatment liquid even if the flow rate of the supply liquid to be supplied is reduced, the amount of the treatment liquid can be reduced.

As described above, according to the second embodiment, the same effects as those of the first embodiment can be obtained. Further, by providing the respective nozzles 6a and 7a in the heating unit 8, even when the flow rate at the time of supplying the processing liquid is slow, the processing liquid can be easily supplied to the center of the substrate. In addition, the flow rate of the treatment liquid can be reduced, and the amount of the treatment liquid can be reduced.

The embodiments of the present invention have been described above by way of example only, and are not intended to limit the scope of the invention. For example, although the supply of the first processing liquid or the second processing liquid or the like is described in an embodiment in which the respective supply times do not overlap, the partial processing may be overlapped. Furthermore, the novel embodiments described above may be carried out in various other forms, and various omissions, substitutions and changes may be made without departing from the spirit of the invention. The embodiments and variations thereof are intended to be included within the scope and spirit of the invention and are included in the scope of the invention as described in the appended claims.

1‧‧‧Substrate processing unit

2‧‧‧Processing box

3‧‧‧ cup body

4‧‧‧ platform

4a‧‧‧Support members

5‧‧‧Rotating mechanism

6‧‧‧1st treatment liquid supply unit

6a‧‧‧ nozzle

7‧‧‧Second treatment liquid supply unit

7a‧‧‧Nozzles

8‧‧‧ heating department

8a‧‧‧lights

9‧‧‧Mobile agencies

10‧‧‧ Temperature Detection Department

10a‧‧‧Retaining components

11‧‧‧Control Department

W‧‧‧Substrate

Claims (8)

A substrate processing apparatus comprising: a processing liquid supply unit that supplies a processing liquid to a surface of the substrate; and a heating unit that irradiates the surface of the substrate with light that is absorbed by the substrate and transmitted through the processing liquid The substrate is heated. The substrate processing apparatus according to claim 1, further comprising: a temperature detecting unit that detects a temperature of the substrate heated by the heating unit; and a control unit that is configured to pass the temperature detecting unit And controlling the temperature of the substrate to be one of the processing liquid supply unit and the heating unit so as to maintain the processing liquid on the surface side in contact with the surface of the substrate at a predetermined temperature higher than the processing efficiency of the substrate. Or both parties. The substrate processing apparatus according to claim 2, wherein the control unit causes the heating unit to start irradiating light onto the surface of the substrate before the processing liquid is supplied by the processing liquid supply unit. The substrate processing apparatus according to claim 2, further comprising: a rotation mechanism that rotates the substrate in a plane; wherein the control unit rotates the substrate by the rotation mechanism to cause the processing liquid supply unit to perform The processing liquid is supplied to the surface of the substrate, and the heating unit is configured to irradiate light onto the surface of the substrate. A substrate processing method comprising: supplying a processing liquid to a surface of a substrate; and irradiating the surface of the substrate with the substrate and absorbing the light The process of heating the substrate by treating the light of the liquid. The substrate processing method according to claim 5, further comprising: a process of detecting a temperature of the heated substrate; and a surface side contacting the surface of the substrate in response to the temperature of the substrate detected The liquid is maintained at a temperature higher than a predetermined temperature at which the substrate processing efficiency is raised, and a process of supplying one or both of the processing liquid to the surface of the substrate and the light to the surface of the substrate is controlled. The substrate processing method according to claim 5, further comprising the step of heating the substrate before the supply of the processing liquid. The substrate processing method according to claim 5, wherein in the process of supplying the processing liquid, the substrate is rotated in a plane, and the processing liquid is supplied to the surface of the substrate, and the substrate is heated. The substrate is rotated in a plane to illuminate the surface of the substrate.