KR102046531B1 - Temperature measuring apparatus for substrate processing and liquid processing apparatus for substrate comprising the same - Google Patents

Temperature measuring apparatus for substrate processing and liquid processing apparatus for substrate comprising the same Download PDF

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Publication number
KR102046531B1
KR102046531B1 KR1020140136939A KR20140136939A KR102046531B1 KR 102046531 B1 KR102046531 B1 KR 102046531B1 KR 1020140136939 A KR1020140136939 A KR 1020140136939A KR 20140136939 A KR20140136939 A KR 20140136939A KR 102046531 B1 KR102046531 B1 KR 102046531B1
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KR
South Korea
Prior art keywords
substrate
unit
processing
temperature
lamp
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KR1020140136939A
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Korean (ko)
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KR20160042689A (en
Inventor
정광일
이병수
유주형
Original Assignee
주식회사 제우스
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Application filed by 주식회사 제우스 filed Critical 주식회사 제우스
Priority to KR1020140136939A priority Critical patent/KR102046531B1/en
Priority to JP2017526031A priority patent/JP6343100B2/en
Priority to CN201580041687.6A priority patent/CN106575618A/en
Priority to US15/328,595 priority patent/US20170221730A1/en
Priority to PCT/KR2015/009051 priority patent/WO2016056748A1/en
Priority to TW104131640A priority patent/TWI567857B/en
Publication of KR20160042689A publication Critical patent/KR20160042689A/en
Application granted granted Critical
Publication of KR102046531B1 publication Critical patent/KR102046531B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Abstract

The present invention relates to a substrate processing temperature measuring apparatus for measuring the temperature of the substrate to process the substrate, and a substrate liquid processing apparatus having the same, comprising: a heater unit in which a plurality of lamp units are arranged to heat the substrate; It characterized in that it comprises a temperature measuring unit for measuring the temperature of the substrate heated by the non-contact. Therefore, the present invention provides a non-contact temperature measurement unit for measuring the temperature of the substrate heated by the heater unit, by measuring the non-uniform region of the heating temperature on the processing surface of the substrate to maintain the heating temperature of the substrate uniformly It provides the heating temperature information to improve the processing efficiency of the substrate.

Description

TEMPERATURE MEASURING APPARATUS FOR SUBSTRATE PROCESSING AND LIQUID PROCESSING APPARATUS FOR SUBSTRATE COMPRISING THE SAME}

The present invention relates to a substrate processing temperature measuring apparatus and a substrate liquid processing apparatus having the same, and more particularly, a substrate processing temperature measuring apparatus for measuring a temperature of a substrate for processing a substrate and a substrate liquid processing apparatus having the same. It is about.

For semiconductor device manufacturing, etching and cleaning processes are essential in forming a multilayer thin film on a substrate.

A substrate liquid processing apparatus, such as a wet type wet etching and cleaning apparatus, rotates a table provided with a chuck supporting a substrate, and supplies the processing liquid to the substrate to perform etching, cleaning and drying processes, and a cup structure around the table. The processing liquid is recovered by using the processing liquid recovery unit having the same.

On the other hand, in order to improve processing efficiency in removing a thin film or photoresist such as a nitride film, an oxide film or a metal film deposited on the substrate from the substrate, a heater is provided on the upper portion of the substrate or the lower portion of the table, or The liquid was treated at a high temperature by heating by heating the temperature to a high temperature or by using a reaction heat generated by mixing of the treatment liquid immediately before the injection after heating.

In particular, the conventional heater-type substrate liquid processing apparatus using a heater device is formed with a heater smaller than the size of the processing surface of the substrate, and the heating temperature of the processing surface of the substrate is nonuniform, causing a cause of processing failure during the liquid processing of the substrate. There was a problem with providing.

In addition, in order to solve the unevenness of the heating temperature with respect to the processing surface of the substrate, the heating of the heater should be controlled, but it is not easy to detect the uneven portion of the heating temperature of the substrate, and the heating of the heater according to the heating temperature of the substrate There was also a problem that was difficult to control.

The present invention has been made to solve the above conventional problems, by measuring the non-uniform region of the heating temperature on the processing surface of the substrate to provide the heating temperature information of the substrate to maintain the heating temperature of the substrate uniformly It is an object of the present invention to provide a substrate processing temperature measuring apparatus capable of improving the processing efficiency of the substrate and a substrate liquid processing apparatus having the same.

In addition, the present invention is fixed to the heater portion is moved to or with the heater unit is fixed to the substrate processing temperature that can simplify the mechanical configuration without the need to install a separate moving means or fixing means for the temperature measuring unit Another object is to provide a measuring apparatus and a substrate liquid processing apparatus having the same.

In addition, the present invention is to provide a substrate processing temperature measuring apparatus and a substrate liquid processing apparatus having the same that can improve the temperature measurement accuracy of the temperature sensor by maintaining the parallel between the temperature measuring unit and the processing surface of the substrate. For other purposes.

In addition, the present invention is a substrate processing temperature measuring device that can easily measure the temperature of the entire processing surface of the substrate rotated by measuring the temperature of the substrate along the circumferential direction of the processing surface of the substrate rotated during processing of the substrate and the same Another object of the present invention is to provide a substrate liquid processing apparatus.

In addition, another object of the present invention is to provide a substrate processing temperature measuring apparatus capable of controlling the heat generation temperature of the lamp unit of the heater unit to be uniformly maintained on the processing surface of the substrate, and a substrate liquid processing apparatus having the same. .

Another object of the present invention is to provide a substrate processing temperature measuring apparatus capable of concentrating heat generation of a heater unit only on a processing surface of a substrate and improving a heating efficiency of the heater unit, and a substrate liquid processing apparatus having the same.

In addition, another object of the present invention is to provide a substrate processing temperature measuring apparatus and a substrate liquid processing apparatus having the same, which are capable of dissipating heat of the heat generating lamp uniformly and at the same time facilitating maintenance of the lamp unit.

In addition, the present invention is to provide a substrate processing temperature measuring apparatus and a substrate liquid processing apparatus having the same that can be arranged so that the heating range of the lamp unit does not overlap with each other to reduce the non-uniformity of the heating temperature on the substrate processing surface. Another purpose.

In addition, another object of the present invention is to provide a substrate processing temperature measuring apparatus and a substrate liquid processing apparatus having the same, which can prevent contamination of the heater device during liquid treatment of the substrate and improve liquid processing efficiency.

In addition, another object of the present invention is to provide a substrate processing temperature measuring apparatus capable of more precisely controlling the heating temperature of the processing surface of the substrate for each lamp group of the lamp unit, and a substrate liquid processing apparatus having the same. .

The present invention for achieving the above object, the temperature measuring device for measuring the temperature of the substrate for processing the substrate, a heater unit is disposed a plurality of lamp units to heat the substrate; And a temperature measuring unit measuring the temperature of the substrate heated by the heater unit in a non-contact manner. The said temperature measuring part of this invention is provided in the opposing surface of the said heater part corresponding to the process surface of a board | substrate.

The temperature measuring unit of the present invention is characterized by consisting of one or more temperature sensors installed to measure the temperature of the substrate position corresponding to the vertical direction. The said temperature sensor of this invention is characterized by the plural number arrange | positioned along the radius of the opposing surface of the said heater part corresponding to the process surface of a board | substrate.

In the measurement result of the temperature sensor of the present invention, a plurality of lamp groups in which at least one lamp unit disposed on the opposite surface is formed of one lamp group is formed, the plurality of lamp groups are formed of one sensor group The sensor group is formed, characterized in that provided to control the heat generation of the lamp unit for each sensor group. The temperature sensor of the present invention is characterized by consisting of a non-contact infrared radiation thermometer.

The said heater part of this invention is formed so that it may have an opposing surface more than the process surface size of a board | substrate. The lamp unit of the present invention is characterized in that the filament of the heating lamp is fitted and coupled to the opposite surface so that each filament is parallel to the processing surface of the substrate and arranged in parallel with each other.

The heater unit of the present invention comprises: a reference lamp unit disposed eccentrically with respect to the center of the opposing surface corresponding to the center of the processing surface; And a plurality of peripheral lamp units having the same distance from the center of the opposite surface as the center of the reference lamp unit.

In addition, the present invention provides a substrate liquid processing apparatus for supplying a processing liquid to the substrate and liquid treatment, comprising: a table portion for chucking and rotating the substrate; An injection unit for injecting a processing liquid onto the substrate; A recovery unit for recovering the processing liquid sprayed on the substrate; A heater unit in which a plurality of lamp units are arranged to heat the substrate; A temperature measuring unit measuring the temperature of the substrate heated by the heater unit in a non-contact manner; And a controller configured to control the heating of the heater unit for each group of the lamp units.

The table portion of the present invention chucks the processing surface of the substrate to face upward, the injection portion is provided on the upper portion of the substrate so as to spray the processing liquid on the processing surface of the substrate, the heater portion is the substrate and the processing liquid It is characterized in that it is provided on top of the substrate to heat the.

The table portion of the present invention chucks the processing surface of the substrate to face downward, the spraying portion is provided at the lower portion of the substrate to spray the processing liquid on the processing surface of the substrate, the heater portion to heat the substrate It is provided on the upper part of the said board | substrate.

In the control unit of the present invention, a plurality of lamp groups in which at least one lamp unit disposed on an opposite surface of the heater part corresponding to the processing surface of the substrate is formed of one lamp group is formed, and the plurality of lamp groups are one A plurality of sensor groups formed by the sensor group is formed, characterized in that for controlling the heat generation of the lamp unit for each sensor group.

As described above, the present invention provides a non-contact temperature measurement unit for measuring the temperature of the substrate heated by the heater unit, by measuring a non-uniform region of the heating temperature on the processing surface of the substrate to uniform the heating temperature of the substrate By providing the heating temperature information of the substrate to maintain it, it provides an effect to improve the processing efficiency of the substrate.

In addition, by installing the temperature measuring unit on the opposite surface of the heater unit, it is fixedly installed on the heater unit and moves together with the heater unit or fixed together, so that there is no need to install a separate moving or fixing unit for the temperature measuring unit, thereby simplifying the mechanical configuration. Provides an effect that can be

In addition, the temperature measuring unit is composed of one or more temperature sensors installed to measure the temperature of the substrate position in the vertical direction with respect to the processing surface of the substrate, thereby maintaining the temperature of the temperature sensor by maintaining parallel between the temperature measuring unit and the processing surface of the substrate It provides the effect of improving the measurement accuracy.

In addition, since a plurality of temperature sensors are disposed along the radius of the heater surface, the temperature of the entire processing surface of the substrate rotated by measuring the temperature of the substrate along the circumferential direction of the processing surface of the substrate rotated during the processing of the substrate. Provide a measurable effect.

In addition, by providing a control to the heating unit temperature of the lamp unit for each sensor group by the measurement result of the temperature sensor of the temperature measuring unit, the effect that can be controlled to maintain the heat generation temperature for the lamp unit of the heater unit uniformly on the processing surface of the substrate to provide.

Further, by forming the shape of the opposite surface of the heater portion in the same shape as the shape of the processing surface of the substrate, the heat generation of the heater portion is concentrated only on the processing surface of the substrate, thereby providing an effect of improving the heating efficiency of the heater portion.

In addition, the filament of the heat generating lamp of the lamp unit is installed parallel to the processing surface of the substrate and each filament is also parallel to each other, thereby dissipating the heat of the heat generating lamp uniformly and at the same time facilitates the maintenance of the lamp unit. to provide.

Further, by arranging the reference lamp unit eccentrically with respect to the center of the opposing surface and by arranging the peripheral lamp units with different distances from the center of the opposing surface, the heating ranges of the lamp units are arranged so as not to overlap with each other. It provides an effect that can reduce the nonuniformity of the heating temperature on the treated surface.

In addition, by installing a heater in the upper portion of the substrate in the substrate liquid processing apparatus and the injection unit is provided in the lower portion of the substrate, it provides an effect that can prevent the contamination of the heater device during the liquid treatment of the substrate and improve the liquid treatment efficiency.

In addition, by providing a temperature measuring unit and a control unit in the substrate liquid processing apparatus, the heating temperature of the processing surface of the substrate can be more precisely controlled for each lamp group of the lamp unit.

1 is a block diagram showing a substrate liquid processing apparatus having a substrate processing temperature measuring apparatus according to an embodiment of the present invention.
2 is a block diagram showing a substrate processing temperature measuring apparatus according to an embodiment of the present invention.
Figure 3 is a layout view showing a sensor group of the substrate processing temperature measuring apparatus according to an embodiment of the present invention.
Figure 4 is a block diagram showing a control state of the substrate processing temperature measuring apparatus according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

1 is a block diagram showing a substrate liquid processing apparatus having a substrate processing temperature measuring apparatus according to an embodiment of the present invention, Figure 2 is a configuration showing a substrate processing temperature measuring apparatus according to an embodiment of the present invention 3 is a layout view showing a sensor group of a substrate processing temperature measuring apparatus according to an embodiment of the present invention, and FIG. 4 is a view illustrating a control state of the substrate processing temperature measuring apparatus according to an embodiment of the present invention. It is a block diagram.

As shown in FIG. 1 and FIG. 2, the substrate processing temperature measuring apparatus according to the present embodiment includes a heater unit 10 and a temperature measuring unit 20, and measures the temperature of the substrate to process the substrate. It is a temperature measuring device for substrate processing. As the substrate to be treated in this embodiment, it is preferable to use a circular thin plate such as a semiconductor wafer used for a semiconductor element.

The heater unit 10 is formed to have an opposite surface that is equal to or larger than the processing surface size of the substrate W, and is preferably formed in the same shape as the processing surface shape of the substrate W as heating means for heating the substrate.

Specifically, in the case where the shape of the processing surface of the substrate W is circular, the shape of the heater portion 10 is formed in a circular shape in which an opposing surface having a size greater than or equal to the circular shape of the substrate W is formed.

The heater unit 10 may be installed to swing in and out of the upper portion of the substrate W or may be installed to be fixed to the upper portion of the substrate W. Therefore, when the processing surface of the substrate W is provided downward, the back surface of the substrate W is heated. When the processing surface of the substrate W is installed upward, the substrate W is disposed. The treated surface of is heated.

In addition, the heater unit 10 includes a plurality of lamp units disposed adjacent to each other on the opposite surface and generates heat toward the processing surface of the substrate W. The heater unit 10 includes a reference lamp unit 11 and a peripheral lamp unit ( 12).

The reference lamp unit 11 is preferably arranged eccentrically with reference to the center of the opposing surface corresponding to the center of the processing surface of the substrate W. As shown in FIG. In particular, it is more preferable that the eccentric range of the reference lamp unit 11 is set so that the separation distance between the center of the opposing surface and the center of the reference lamp unit 11 is within ⅔ of the lamp unit diameter. This is because if the eccentric range is larger than the diameter of the lamp unit, the heat generation performance of the center portion of the processing surface of the substrate is lowered and the processing surface of the substrate is unevenly heated.

The plurality of peripheral lamp units 12 are arranged such that a plurality of separation distances from the center C of the opposing surface are the same or different from each other with the reference lamp unit 11 as the center.

More specifically, the plurality of peripheral lamp units are arranged at different distances from each other, as the separation distance of the second lamp unit marked 2 and the separation distance of the sixth lamp unit marked 6 are different from each other. . In addition, it is also possible that some of the peripheral lamp units are arranged at the same distance from the center (C) of the opposing surface.

Therefore, since the peripheral lamp unit 12 is disposed on the opposite surface of the heater unit 10 so that the separation distances of the peripheral lamp units 12 marked 1 to n-8 are different from each other, the processing surface of the substrate The heater unit may generate heat at various points having different distances from the center of the corresponding opposing surface to uniformly heat the processing surface of the substrate W. FIG.

In addition, the heater unit 10 is formed with a plurality of lamp groups in which at least one lamp unit is formed of one lamp group, it is preferable that the heat generation of the lamp unit for each lamp group is controlled. Specifically, as illustrated in FIGS. 2 and 4, n lamp groups including the first to n-8th lamp units are formed, and heat generation is controlled for each lamp group.

In addition, one lamp unit is formed as one lamp group at the center portion of the opposing surface, and a plurality of lamp units may be formed as one lamp group at the outer portion of the opposing surface.

Specifically, in the first to twelfth lamp units marked 1 to 12 disposed on the center of the opposing surface, one lamp unit is formed of one lamp group so that the heat generation of the lamp unit is controlled for each lamp group. .

In addition, in the 13-1 to n-8 lamp units marked 13-1 to n-8 disposed on the outer side of the opposing surface, a plurality of lamp units are formed as one lamp group, and thus each lamp group The heat generation of the lamp unit is controlled.

In addition, the lamp unit is provided on the opposite surface of the heater unit 10 is a lamp means for generating heat by irradiating toward the processing surface of the substrate (W) with reference to the opposite surface, the heating lamp of the lamp unit is the substrate W processing It is preferable that the filament is disposed parallel to the plane.

In addition, the lamp unit of the lamp unit 10, of course, it is also possible that the filament of the heating lamp is fitted to be coupled to the opposite surface so as to be parallel to each other.

Such a heat generating lamp may use various infrared radiation lamps, such as a cantal lamp, a halogen lamp, a tungsten lamp, etc. as a lamp emitting infrared wavelengths, but in this embodiment, it generates heat above 500 ° C. for liquid treatment of the substrate. More preferably, tungsten-halogen lamps are used.

The temperature measuring unit 20 is a measuring means for measuring the temperature of the substrate W heated by the heater unit 10 in a non-contact manner, and the opposing surface of the heater unit 10 corresponding to the processing surface of the substrate W is provided. It is preferably installed in.

The temperature measuring unit 20 is composed of one or more temperature sensors installed to measure the temperature of the substrate position corresponding to the vertical direction. As shown in FIGS. 2 to 4, the temperature sensors include a plurality of temperature sensors, such as the first to first temperature sensors disposed along a radius of the opposite surface of the heater unit 10 corresponding to the processing surface of the substrate W. As shown in FIG. Consists of

Such a temperature sensor is arranged in a plurality of different positions at a predetermined position of the radius of the opposite surface of the heater unit 10 so as to measure the heating temperature along the periphery of the processing surface of the rotating substrate (W), or a plurality of the same in a row at equal intervals Of course, it can also be arranged as.

In particular, as the non-contact temperature sensor, it is possible to use a variety of non-contact temperature sensor, such as infrared temperature sensor, thermopile temperature sensor, pyroelectric temperature sensor, etc. In this embodiment, the heating of the substrate in the high temperature state during the liquid treatment of the substrate It is preferable to use an infrared temperature sensor such as a pyrometer as the non-contact infrared radiation thermometer to measure the temperature in a non-contact state.

The result of the measurement of the temperature sensor is a plurality of lamp groups in which at least one lamp unit arranged on the opposite surface is formed of one lamp group is formed, a plurality of sensor groups formed of a plurality of lamp groups in one sensor group is formed In this case, it is preferable that the heating of the lamp unit is controlled for each sensor group.

Specifically, as shown in Figs. 2 and 3, n plurality of lamp groups including the first to n-th lamp units are formed. 3 and 4, the sensor group includes a first sensor group consisting of a plurality of lamp groups of the first to seventh lamp units and a plurality of lamp groups of the eighth to 15-2 lamp units. A plurality of sensor groups consisting of a final sensor group or the like consisting of a plurality of lamp groups of the second sensor group to (n-3) -1 to n-8th lamp units are formed.

Thus, as shown in Figure 4, the first temperature sensor measures the temperature of the substrate to provide temperature information to the first sensor group to control the heating temperature of the lamp unit, the second temperature sensor measures the temperature of the substrate The temperature information is provided to the second sensor group to control the heat generation temperature of the lamp unit, and the l temperature sensor measures the temperature of the substrate to provide temperature information to the final sensor group to control the heat generation temperature of the lamp unit. .

In addition, the temperature measuring device of the present embodiment further includes a controller 30 having first to mth controllers connected to the first to lth temperature sensors, respectively, to control the heat generation temperature of the lamp unit. Of course it is possible.

Hereinafter, with reference to the drawings, a substrate liquid processing apparatus including the temperature measuring device for substrate processing of this embodiment will be described in detail.

As shown in FIG. 1, the substrate liquid processing apparatus provided with the substrate processing temperature measuring apparatus of this embodiment includes a table portion 110, an injection portion 120, a recovery portion 130, a heater portion 10, and a temperature. It is a board | substrate liquid processing apparatus which consists of the measurement part 20 and the control part 30, and supplies a process liquid to the board | substrate W, and performs a liquid process.

The table 110 is a rotation support means for chucking and rotating the substrate W. The table 110 chucks and rotates the processing surface of the substrate W upward, or rotates the processing surface of the substrate W downward. Of course, it is also possible to rotate by supporting the chucking.

In particular, it is preferable that the table portion 110 of the present embodiment is chucked and supported so that the processing surface of the substrate W faces downward so as to spray the processing liquid from the lower portion of the substrate W by the injection portion 120. .

The injection part 120 is supply means which inject | pours so that process liquid may be supplied to the process surface of the board | substrate W, When chucking and supporting the process surface of the board | substrate W to the table part 110 upwards, In the case where the substrate W is provided above the substrate W and chucked to the table 110 so that the processing surface of the substrate W faces downward, the substrate W may be provided below the substrate W. .

The spray unit 120 of the present embodiment is preferably supplied by spraying the processing liquid from the lower portion of the substrate W to chuck and support the processing surface of the substrate W to the table 110 to face downward. .

The recovery unit 130 is a recovery unit provided around the outer periphery of the table unit 110 to recover the processing liquid injected onto the substrate W. The processing liquid injected onto the processing surface of the substrate W is the substrate W; Since it is discharged along the outer circumference by the centrifugal force during the rotation of the), it is formed in a cylindrical cup shape to recover it.

In addition, of course, such a collection part 130 can also be comprised by the several cup shape formed concentrically so that the process liquid supplied to the process surface of the board | substrate W may collect these, respectively.

The heater unit 10 is a heating means for heating the substrate W. The heater unit 10 is provided above the substrate W to heat the substrate W and the processing liquid. The heater of the temperature measuring apparatus for processing a substrate of the present embodiment Since it is made of a section 10, a detailed description thereof will be omitted. In particular, such a heater 10 may be provided so as to pivot in and out of the upper portion of the substrate W or may be provided to be fixedly supported on the upper portion of the substrate W.

The temperature measuring unit 20 is a non-contact temperature measuring means for measuring the temperature of the substrate W heated by the heater unit 10 to the temperature measuring unit 20 of the temperature measuring device for substrate processing of the present embodiment. Are omitted, so a detailed description will be omitted.

The controller 30 includes a plurality of controllers configured by the first to m-th controllers to control the heating temperature of the heater unit 10 for each sensor group including the first to the last sensor group of the lamp unit.

The control unit 30 is formed with a plurality of lamp groups in which one or more lamp units arranged on the opposite surface of the heater unit 10 corresponding to the processing surface of the substrate W is formed of one lamp group. It is preferable that a plurality of sensor groups are formed in which one lamp group is formed of one sensor group, thereby controlling heat generation of the lamp unit for each sensor group.

Therefore, the controller 30 controls the heating temperature of the lamp unit of the heater unit 10 for each sensor group based on the heating temperature of the processing surface of the substrate W measured by the temperature measuring unit 20. It is possible to maintain a uniform heating temperature of the treated surface.

As described above, according to the present invention, by providing a non-contact temperature measurement unit for measuring the temperature of the substrate heated by the heater unit, by measuring the non-uniform portion of the heating temperature on the processing surface of the substrate to uniform the heating temperature of the substrate By providing the heating temperature information of the substrate to maintain it, it provides an effect to improve the processing efficiency of the substrate.

In addition, by installing the temperature measuring unit on the opposite surface of the heater unit, it is fixedly installed on the heater unit and moves together with the heater unit or fixed together, so that there is no need to install a separate moving or fixing unit for the temperature measuring unit, thereby simplifying the mechanical configuration. Provides an effect that can be

In addition, the temperature measuring unit is composed of one or more temperature sensors installed to measure the temperature of the substrate position in the vertical direction with respect to the processing surface of the substrate, thereby maintaining the temperature of the temperature sensor by maintaining parallel between the temperature measuring unit and the processing surface of the substrate It provides the effect of improving the measurement accuracy.

In addition, since a plurality of temperature sensors are disposed along the radius of the heater surface, the temperature of the entire processing surface of the substrate rotated by measuring the temperature of the substrate along the circumferential direction of the processing surface of the substrate rotated during the processing of the substrate. Provide a measurable effect.

In addition, by providing a control to the heating unit temperature of the lamp unit for each sensor group by the measurement result of the temperature sensor of the temperature measuring unit, the effect that can be controlled to maintain the heat generation temperature for the lamp unit of the heater unit uniformly on the processing surface of the substrate to provide.

Further, by forming the shape of the opposite surface of the heater portion in the same shape as the shape of the processing surface of the substrate, the heat generation of the heater portion is concentrated only on the processing surface of the substrate, thereby providing an effect of improving the heating efficiency of the heater portion.

In addition, the filament of the heat generating lamp of the lamp unit is installed parallel to the processing surface of the substrate and each filament is also parallel to each other, thereby dissipating the heat of the heat generating lamp uniformly and at the same time facilitates the maintenance of the lamp unit. to provide.

Further, by arranging the reference lamp unit eccentrically with respect to the center of the opposing surface and by arranging the peripheral lamp units with the same or different distances from the center of the opposing surface, the heating range of the lamp unit is not overlapped with each other. Disposed to provide the effect of reducing the nonuniformity of the heating temperature on the substrate processing surface.

In addition, by installing a heater in the upper portion of the substrate in the substrate liquid processing apparatus and the injection unit is provided in the lower portion of the substrate, it provides an effect that can prevent the contamination of the heater device during the liquid treatment of the substrate and improve the liquid treatment efficiency.

In addition, by providing a temperature measuring unit and a control unit in the substrate liquid processing apparatus, the heating temperature of the processing surface of the substrate can be more precisely controlled for each lamp group of the lamp unit.

The present invention described above can be embodied in many other forms without departing from the spirit or main features thereof. Therefore, the above embodiments are merely examples in all respects and should not be interpreted limitedly.

10: heater unit 20: temperature measuring unit
30: control unit 110: table unit
120: injection unit 130: recovery unit

Claims (13)

A temperature measuring device for measuring a temperature of a substrate for processing a substrate,
A heater unit in which a plurality of lamp units are arranged to heat the substrate; And
And a temperature measuring unit measuring the temperature of the substrate heated by the heater unit in a non-contact manner.
The heater unit,
A reference lamp unit disposed eccentrically with respect to the center of the opposing surface corresponding to the center of the processing surface of the substrate; And
And at least one peripheral lamp unit disposed at different distances from the center of the opposing surface based on the reference lamp unit.
The peripheral lamp unit is a substrate measuring temperature measuring apparatus, characterized in that the separation distance between any one of the peripheral lamp unit of the peripheral lamp unit and the other peripheral lamp units arranged around the formed different from each other. The method of claim 1,
And the temperature measuring unit is provided on an opposite surface of the heater unit corresponding to the processing surface of the substrate. The method of claim 1,
The temperature measuring unit is a substrate processing temperature measuring apparatus, characterized in that consisting of one or more temperature sensors installed to measure the temperature of the substrate position corresponding to the vertical direction. The method of claim 3, wherein
The temperature sensor is a substrate processing temperature measuring apparatus, characterized in that a plurality of the temperature sensor is disposed along the radius of the opposite surface of the heater portion corresponding to the processing surface of the substrate. The method of claim 4, wherein
The measurement result of the temperature sensor, a plurality of lamp group is formed of one lamp group is formed of one or more lamp units arranged on the opposite surface, a plurality of sensor groups formed of one sensor group Is formed, the temperature measurement apparatus for substrate processing, characterized in that provided to control the heat generation of the lamp unit for each sensor group. The method of claim 3, wherein
The temperature sensor is a substrate measuring temperature measuring apparatus, characterized in that consisting of a non-contact infrared radiation thermometer. delete The method of claim 1,
The lamp unit is a substrate measuring temperature measuring apparatus, characterized in that the filament of the heating lamp is fitted to the opposing surface so that the filament is parallel to the processing surface of the substrate and each of the filaments are arranged parallel to each other. delete A substrate liquid processing apparatus comprising the temperature measuring device for processing a substrate according to claim 1, wherein the processing liquid is supplied to the substrate to perform liquid processing.
Table portion for chucking and rotating the substrate;
An injection unit for injecting a processing liquid onto the substrate;
A recovery unit for recovering the processing liquid sprayed on the substrate;
A heater unit in which a plurality of lamp units are arranged to heat the substrate;
A temperature measuring unit measuring the temperature of the substrate heated by the heater unit in a non-contact manner; And
And a controller configured to control the heating of the heater unit for each group of the lamp units. The method of claim 10,
The table portion chucks the processing surface of the substrate upwards,
The injection portion is provided on the upper portion of the substrate so as to spray the processing liquid on the processing surface of the substrate,
And the heater portion is provided above the substrate so as to heat the substrate and the processing liquid. The method of claim 10,
The table portion chucks the processing surface of the substrate downward,
The injection unit is provided in the lower portion of the substrate to inject a processing liquid to the processing surface of the substrate,
And the heater portion is provided above the substrate to heat the substrate. The method of claim 10,
The control unit may include a plurality of lamp groups in which one or more lamp units disposed on opposite surfaces of the heater part corresponding to the processing surface of the substrate are formed of one lamp group, and the plurality of lamp groups are one sensor group. A plurality of formed sensor group is formed, the substrate liquid processing apparatus, characterized in that for controlling the heat generation of the lamp unit for each sensor group.
KR1020140136939A 2014-10-10 2014-10-10 Temperature measuring apparatus for substrate processing and liquid processing apparatus for substrate comprising the same KR102046531B1 (en)

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KR1020140136939A KR102046531B1 (en) 2014-10-10 2014-10-10 Temperature measuring apparatus for substrate processing and liquid processing apparatus for substrate comprising the same
JP2017526031A JP6343100B2 (en) 2014-10-10 2015-08-28 Substrate processing heater device and substrate liquid processing apparatus having the same
CN201580041687.6A CN106575618A (en) 2014-10-10 2015-08-28 Substrate processing heater device and substrate solution processing device having same
US15/328,595 US20170221730A1 (en) 2014-10-10 2015-08-28 Substrate processing heater device and substrate solution processing device having same
PCT/KR2015/009051 WO2016056748A1 (en) 2014-10-10 2015-08-28 Substrate processing heater device and substrate solution processing device having same
TW104131640A TWI567857B (en) 2014-10-10 2015-09-24 Heater apparatus for substrate processing and liquid processing apparatus for substrate comprising the same

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KR102102277B1 (en) * 2018-09-20 2020-04-20 주식회사 에이치에스하이테크 Apparatus for processing wafer
KR102099884B1 (en) * 2018-09-27 2020-04-13 세메스 주식회사 Substrate heating unit and substrate processing apparatus using the same
KR102305331B1 (en) * 2020-03-23 2021-09-28 무진전자 주식회사 Substrate processing apparatus using light source built in spin chuck

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