CN111812951A - Developing device and developing method - Google Patents
Developing device and developing method Download PDFInfo
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- CN111812951A CN111812951A CN201910295895.9A CN201910295895A CN111812951A CN 111812951 A CN111812951 A CN 111812951A CN 201910295895 A CN201910295895 A CN 201910295895A CN 111812951 A CN111812951 A CN 111812951A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
- G03F7/3028—Imagewise removal using liquid means from a wafer supported on a rotating chuck characterised by means for on-wafer monitoring of the processing
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Abstract
The embodiment of the invention relates to the technical field of semiconductor device manufacturing process, and discloses a developing device, which comprises: the wafer heating device comprises a rotatable bearing platform for bearing wafers, a heating wire arranged below the rotatable bearing platform, an exhaust pipe connected with the lower part of the rotatable bearing platform, a temperature detector arranged above the rotatable bearing platform and a controller for connecting the heating wire and the temperature detector; the rotatable bearing platform drives the wafer to rotate, so that the developing solution used for developing treatment coats the whole wafer and reacts; the gas extraction pipe is used for extracting gas generated in the developing treatment process; the temperature detector is used for detecting the surface temperature value of the wafer in the developing treatment process; the controller is used for providing a reference temperature value and controlling the heating wire to perform temperature compensation on the wafer according to the difference value between the detected surface temperature value of the wafer and the reference temperature value. According to the developing device and the developing method provided by the embodiment of the invention, the uniformity of the line width of the photoresist layer can be improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductor device manufacturing processes, in particular to a developing device and a developing method.
Background
A photolithography process for manufacturing a semiconductor device includes a plurality of processes such as a coating process, an exposure process, a heat treatment process, and a development process, which are sequentially performed on a wafer, to form a predetermined resist pattern, that is, a patterned photoresist layer, on the wafer. In the coating treatment process, a resist solution is coated on a wafer to form a resist film; in the exposure step, the resist film is exposed; in the developing treatment step, the resist film after exposure is developed. This series of steps is performed in a coating and developing system equipped with various processing apparatuses such as a coating processing apparatus, a heat treatment apparatus, and a developing processing apparatus, and a wafer transfer apparatus.
As wafer sizes become smaller and the requirements for development resolution increase, the requirements for line width uniformity of photoresist layers in the process also increase.
Disclosure of Invention
An object of an embodiment of the present invention is to provide a developing apparatus and a developing method capable of improving uniformity of line width of a photoresist layer.
To solve the above technical problem, an embodiment of the present invention provides a developing device including: the wafer heating device comprises a rotatable bearing platform for bearing wafers, a heating wire arranged below the rotatable bearing platform, an exhaust pipe connected with the lower part of the rotatable bearing platform, a temperature detector arranged above the rotatable bearing platform and a controller for connecting the heating wire and the temperature detector; the rotatable bearing platform drives the wafer to rotate, so that the developing solution used for developing treatment coats the whole wafer and reacts; the gas extraction pipe is used for extracting gas generated in the developing treatment process; the temperature detector is used for detecting the surface temperature value of the wafer in the developing treatment process; the controller is used for providing a reference temperature value and controlling the heating wire to perform temperature compensation on the wafer according to the difference value between the detected surface temperature value of the wafer and the reference temperature value.
The embodiment of the invention also provides a developing method, which is applied to the developing device; the rotatable bearing platform is used for driving the wafer to rotate, so that the developing solution used for developing treatment is used for coating the whole wafer and carrying out reaction; extracting gas generated in the developing process by using an exhaust tube; detecting the surface temperature value of the wafer in the developing treatment process by using a temperature detector; and providing a reference temperature value, and controlling the heating wire to perform temperature compensation on the wafer according to the difference value between the surface temperature value of the wafer detected by the temperature detector and the reference temperature value.
Compared with the prior art, in the developing treatment process, when the gas generated in the developing treatment is extracted by the exhaust tube, the flow rates of the gas at each position on the bearing table are different, so that the temperature values at each position on the surface of the wafer on the bearing table are different; the embodiment of the invention provides a developing device, wherein a temperature detector is arranged above a bearing table, a heating wire is arranged below the bearing table, and a controller connected with the temperature detector and the heating wire is arranged, the controller controls the heating wire to carry out temperature compensation on a wafer according to the difference between the temperature value of the surface of the wafer detected by the temperature detector and a reference temperature value, so that the temperature value of the surface of the wafer is close to the reference temperature value, the temperature of each part of the surface of the wafer tends to be consistent in the process of extracting gas by an exhaust pipe, the influence of temperature difference caused by the extraction of the developing treatment on the uniformity of line width is avoided, and the uniformity of the line width of the surface of the wafer in the developing treatment process is improved.
In addition, the heating wires are multiple, each heating wire is a ring-shaped heating wire, and the plurality of ring-shaped heating wires are arranged in a ring-shaped radial manner from the direction far away from the center of the rotatable bearing platform.
In addition, the temperature detector is a plurality of temperature detectors, each temperature detector corresponds to one annular heating wire, and the projection of each temperature detector falls on the corresponding annular heating wire. The temperature detector in the scheme is arranged to well reflect the temperature compensation effect of the corresponding annular heating wire.
In addition, the controller is specifically configured to obtain a difference between a surface temperature value of the wafer detected by each temperature detector and a reference temperature value, and control the heating of the annular heating wire corresponding to the temperature detector according to the difference. In the scheme, each temperature detector, the corresponding heating wire and the controller form a group of independent temperature control subsystems, so that the adjustment of the surface temperature of the wafer is more accurate.
In addition, the device also comprises a reference temperature detector which is fixed right above the center of the bearing table and is used for detecting the temperature value of the center of a circle of the wafer on the bearing table in the developing process and taking the detected temperature value as the reference temperature value.
In addition, the spacing between adjacent ones of the plurality of loop heating wires is gradually narrowed from a direction away from the center of the rotatable susceptor.
In addition, the heating power of the plurality of annular heating wires is consistent. According to the scheme, the plurality of annular heating wires can be controlled to realize different temperature compensation without arranging a power converter, and the method is easy to realize.
In addition, still include: and the nozzle is arranged above the rotatable bearing platform and used for spraying the developing solution to the wafer on the rotatable bearing platform. The developing device in the scheme can be independently used without depending on an external spraying device.
In addition, the heating wire is contacted with the lower surface of the rotatable bearing platform, and the wafer is heated through the rotatable bearing platform.
In addition, according to the difference value between the surface temperature value of the wafer detected by the temperature detector and the reference temperature value, the heating wire is controlled to perform temperature compensation on the wafer, which specifically comprises the following steps: detecting the surface temperature value of the wafer by using each temperature detector; and acquiring a difference value between the surface temperature value of the wafer and the reference temperature value, and controlling the heating of the annular heating wires corresponding to each temperature detector according to the difference value.
In addition, before the rotatable carrying platform is used to drive the wafer to rotate, the method further comprises the following steps: the wafer is fixed above the rotatable bearing platform, and the center of the rotatable bearing platform is overlapped with the circle center of the wafer. The arrangement in the scheme ensures that the linear speeds of all tangent lines of the wafer on the rotatable bearing platform are the same when the rotatable bearing platform rotates at a constant speed, and the developing solution can be uniformly coated on the wafer, so that the uniformity of the line width is further ensured.
Drawings
One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the figures in which like reference numerals refer to similar elements and which are not to scale unless otherwise specified.
Fig. 1 is a schematic configuration diagram of a developing device according to a first embodiment of the present invention;
FIG. 2 is a schematic configuration diagram of a developing device according to a second embodiment of the present invention;
fig. 3 is a schematic structural view of a temperature detector according to a second embodiment of the present invention corresponding to a heating wire;
FIG. 4 is a schematic configuration diagram of a developing device according to a third embodiment of the present invention;
fig. 5 is a schematic flow chart of a developing method according to a fourth embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that numerous technical details are set forth in order to provide a better understanding of the present application in various embodiments of the present invention. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments.
A first embodiment of the present invention relates to a developing device including: the wafer heating device comprises a rotatable bearing platform 1 for bearing a wafer 10, a heating wire 2 arranged below the rotatable bearing platform 1, an exhaust pipe 3 connected with the lower part of the rotatable bearing platform 1, a temperature detector 4 arranged above the rotatable bearing platform 1, and a controller 5 for connecting the heating wire 2 and the temperature detector 4.
The rotatable bearing platform 1 drives the wafer 10 to rotate, so that the developing solution used for developing treatment coats the whole wafer 10 and reacts; the gas extraction pipe 3 is used for extracting gas generated in the developing process; the temperature detector 4 is used for detecting the surface temperature value of the wafer 10 in the developing process; the controller 5 is used for providing a reference temperature value and controlling the heating wire to perform temperature compensation on the wafer 10 according to the difference between the surface temperature value of the wafer 10 detected by the temperature detector 4 and the reference temperature value.
Specifically, during the developing process, the developer reacts with the soluble region of the exposed photoresist layer on the surface of the wafer 10, so that the photoresist in the soluble region is removed, and the "line width" in this embodiment refers to the width of the photoresist layer removed after the developing process. Since the reaction between the photoresist and the developing solution is an exothermic reaction, the lower the temperature of the wafer surface is, the faster the reaction is, and the wider the line width is; while the higher the temperature, the slower the reaction and the narrower the line width. In the developing process, the gas in the reaction device needs to be extracted by the gas extraction pipe 3, so as to avoid the defect that the developing solution is thrown to the inner wall of the reaction device and splashed to the surface of the wafer 10 in the spin coating process. During the air extraction of the developing process, the gas flow rates above the middle area and above the edge area of the wafer 10 are different, so that the temperature distribution and the reaction rate of the surfaces of the middle area and the edge area of the wafer 10 are not uniform, and the uniformity of the line width on the surface of the wafer 10 is affected. In this embodiment it is assumed that: and when the difference value between the maximum line width and the minimum line width on the surface of the whole wafer is less than 7.5% of the target line width, the line width on the surface of the whole wafer is considered to be uniform.
In other embodiments, the line width may also refer to the width of the photoresist layer remaining after the development process.
The developing apparatus will be described below with reference to a method of using the developing apparatus, in which the wafer 10 is carried on the rotatable susceptor 1.
The developing treatment process comprises the following steps: spraying a developing solution on the surface of the wafer 10; then, the rotatable bearing table 1 drives the wafer 10 thereon to rotate, so that the developing solution sprayed on the surface of the wafer 10 coats the whole wafer 10 and is subjected to developing treatment; in the developing process, the developing solution and the photoresist material are chemically reacted to generate reaction gas, and the reaction gas generated by the reaction is extracted by the exhaust tube 3.
The temperature compensation device further comprises a temperature detector 4 arranged above the rotatable bearing platform 1 and used for detecting the surface temperature value of the wafer 10 in the developing treatment process, the controller 5 controls the heating wire to perform temperature compensation on the wafer 10 according to the difference value between the surface temperature value of the wafer 10 detected by the temperature detector 4 and the reference temperature value, so that the surface temperature value of each area of the wafer 10 approaches to the same reference temperature value, the influence of temperature difference caused by air exhaust in the developing treatment on the line width uniformity is avoided, and the line width uniformity in the developing treatment process is further improved.
It should be noted that the reference temperature value provided by the controller 5 is a fixed value, and is generally 28 °, and of course, the reference temperature value may also be adjusted according to actual needs.
Further, since the wafer 10 is generally circular in shape, when the wafer 10 is fixed, the center of the rotatable platform 1 is fixed to the center of the wafer 10, so that the linear velocities of the tangents of the wafer 10 on the rotatable platform 1 when the rotatable platform rotates at a constant speed are the same, and the developing solution can be uniformly coated on the wafer 10, thereby further ensuring the uniformity of the line width. In this embodiment, the rotatable platform 1 may be circular, and the periphery thereof may be provided with a baffle, so as to prevent the developer from splashing when the rotatable platform 1 drives the wafer 10 to rotate, or prevent the wafer 10 from being thrown out without being fixed. Of course, those skilled in the art will appreciate that the shape of the rotatable susceptor 1 is not limited to circular, but may be other shapes such as square, but no matter what the shape of the rotatable susceptor 1 is, the wafer 10 is fixed to the center of the rotatable susceptor 1, so as to ensure that the linear velocities of the respective tangents of the wafer 10 on the wafer 10 are consistent when the wafer 10 rotates with the rotatable susceptor 1.
Compared with the prior art, in the developing treatment process, when the gas generated in the developing treatment is extracted by the gas extraction pipe 3, the flow rates of the gas at each position on the bearing table 1 are different, so that the temperature values at each position on the surface of the wafer 10 on the bearing table 1 are different; the embodiment of the invention provides a developing device, wherein a temperature detector is arranged above a bearing table 10, a heating wire is arranged below the bearing table 10, a controller 5 connected with the temperature detector 4 and the heating wire 2 is arranged, and the controller 5 controls the heating wire 2 to perform temperature compensation on a wafer 10 according to the difference value between the temperature value of the surface of the wafer 10 detected by the temperature detector 4 and a reference temperature value, so that the surface temperature value of the wafer 10 is close to the reference temperature value, and the temperatures of all parts on the surface of the wafer 10 tend to be consistent in the process of extracting gas by an exhaust pipe 3, thereby avoiding the influence of the temperature difference on the uniformity of the line width during the air extraction of the developing treatment and improving the uniformity of the line width of the surface of the wafer 10 during the developing treatment.
A second embodiment of the present invention relates to a developing device. As shown in fig. 2, the second embodiment is an improvement of the first embodiment, and is mainly improved in that in the present embodiment, the number of the heating wires 2 is plural, each heating wire 2 is a ring-shaped heating wire 2, and the plural ring-shaped heating wires 2 are arranged radially in a ring shape from a direction away from the center of the rotatable bearing table 1.
Specifically, the inventors found that the temperature distribution of the surface of the middle region and the edge region of the wafer 10 is not uniform during the evacuation process, and the surface temperature of the wafer 10 generally tends to decrease from the center to the edge, and in this embodiment, the plurality of heating wires 2 are annular and are arranged radially in a ring shape in a direction away from the center of the rotatable susceptor 1, so as to conform to the temperature distribution law during the evacuation process.
It is worth mentioning that, the intervals between two adjacent ring-shaped heating wires 2 in the plurality of ring-shaped heating wires 2 are equal, and the plurality of ring-shaped heating wires 2 can be arranged at equal intervals. Optionally, the distance between two adjacent ring-shaped heating wires 2 in the plurality of ring-shaped heating wires 2 may also gradually narrow from the direction away from the center of the rotatable susceptor 1, and the narrower the distance between two adjacent ring-shaped heating wires 2 near the edge of the rotatable susceptor 1 is arranged, so that when the heating wires 2 are used for heating, the temperature of the edge of the wafer 10 rises faster, and the temperature compensation speed is increased.
Accordingly, the temperature detectors 4 are plural, each temperature detector 4 corresponds to one of the loop heating wires 2, and the projection of the temperature detector 4 falls on the corresponding loop heating wire 2.
Specifically, as shown in fig. 3, each temperature detector 4 in the present embodiment corresponds to one of the loop heaters 2, and its projection falls on the corresponding loop heater 2. When the rotatable susceptor 1 drives the wafer 10 thereon to rotate, the temperature detector 4 can detect the temperature values of different points on the annular area of the wafer 10 heated by the corresponding annular heating wire 2, so as to better reflect the temperature compensation effect of the annular heating wire 2. It should be noted that the term "projection" used herein refers to an orthographic projection from above the temperature detector 4 to the vertical direction of the heating wire loop 2 to ensure the detection effect of the temperature detector 4.
It should be noted that, in the present embodiment, the temperature detector may specifically be an infrared temperature detector. The distance between the infrared temperature detector and the surface of the wafer 10 above the rotatable susceptor 1 can be set to be 5-10cm so as to ensure the detection effect of the temperature detector. Further, in order to avoid the influence of the temperature detector 4 on the taking out and putting in of the wafer 10 from the rotatable carrying table 1, the temperature detector 4 may be movably disposed above the rotatable carrying table 1, and when the wafer 10 needs to be taken out or put in, the temperature detector 4 is moved away from the rotatable carrying table 1, so as to facilitate the taking out and putting in of the wafer 10; after the wafer 10 is placed, the temperature detector 4 is moved to be close to the wafer 10, thereby ensuring the detection effect.
In this embodiment, the controller 5 is specifically configured to obtain a difference between a surface temperature value of the wafer 10 detected by each temperature detector 4 and a reference temperature value, and control the heating of the annular heating wire 2 corresponding to the temperature detector 4 according to the difference.
Specifically, each temperature detector 4, the ring-shaped heating wire 2 corresponding to the temperature detector 4, and the controller 5 constitute a set of independent temperature control subsystems, and the entire developing device includes a plurality of sets of independent temperature control subsystems sharing the controller 5. The controller 5 controls the annular heating wires 2 in each group of temperature control subsystems to compensate different temperature difference values according to different temperature values of the surface of the wafer 10 measured by the temperature detector 4 in each group of temperature control subsystems, so that the accurate adjustment of the temperatures of different areas of the surface of the wafer 10 is realized.
It should be noted that, when the plurality of loop heating wires 2 are used for heating, the heating power of each loop heating wire 2 may be consistent. For example, the heating power of the heating wire loops 2 can be set to 2000W when heating, and the controller 5 can implement different temperature compensation by controlling the heating time period of each heating wire loop 2 for different zones. The plurality of annular heating wires 2 can be controlled to realize different temperature compensation without arranging a power converter, and the method is easy to realize.
Optionally, a power converter may be further disposed in the controller 5, and for different areas, when different temperature compensations can be implemented according to each of the ring-shaped heating wires 2, the heating power can be adjusted according to the temperature difference value to be compensated, so that the temperature of the surface area of the wafer 10 heated by each of the ring-shaped heating wires 2 is rapidly raised to the reference temperature value. In this embodiment, the controller 5 can control the heating temperature of each ring-shaped heating wire 2 to be adjusted between 20 ℃ and 100 ℃, and the adjustment precision is 0.1 ℃, so as to realize accurate temperature adjustment.
The developing device of the present embodiment further includes: and the reference temperature detector 41 is fixed right above the circle center of the rotatable bearing table 1 and is used for detecting the temperature value of the circle center of the wafer 10 on the rotatable bearing table 1 in the developing process and taking the detected temperature value as the reference temperature value. In the developing process, the gas flow rate at the center of the surface of the wafer 10 is generally the lowest, the temperature value at the center of the surface of the wafer 10 can generally represent a normal reaction temperature value, and the actual temperature value at the center of the wafer 10 is taken as a reference temperature value, so that the temperature value in the center area of the wafer 10 does not need to be adjusted, and the operation flow is simplified.
Further, the heating wire 2 is in contact with the lower surface of the rotatable susceptor 1, and the wafer 10 is heated by the rotatable susceptor 1. The wafer 10 is heated by adopting a contact heating mode, and the heating wire 2 rotates along with the rotatable bearing platform 1 when the rotatable bearing platform 1 rotates, so that the defects that the heating speed is low and errors are easily generated when the wafer rotates when the wafer 10 is heated by adopting a non-contact heating mode are overcome.
The inventors found that when the developing process is performed with air extraction, the temperature distribution of the surface of the middle area and the edge area of the wafer 10 is not uniform, and the surface temperature of the wafer 10 generally tends to decrease from the center to the edge, and for this reason, in the present embodiment, the plurality of heating wires 2 are annular and are arranged in an annular radial manner from the direction away from the center of the rotatable susceptor 1, so as to conform to the temperature distribution rule during the air extraction.
A third embodiment of the present invention relates to a developing device. As shown in fig. 4, the third embodiment is a further improvement of the first embodiment, and the main improvements are as follows: the developing device in the present embodiment further includes: and the nozzle 6 is arranged above the rotatable bearing platform 1, and the nozzle 6 is used for spraying the developing solution on the wafer 10 on the rotatable bearing platform 1.
Specifically, the developing device in the present embodiment further includes the nozzle 6 disposed above the rotatable carrier 1, and the developing device in the present embodiment includes the nozzle 6 capable of spraying the developing solution, and can be used independently without relying on an external spraying device.
Alternatively, the nozzle 6 may be disposed at a fixed position, for example, at a position right opposite to the center of the wafer 10, and the nozzle 6 may be sprayed at the center of the wafer 10 when spraying the developing solution; the nozzle 6 may be disposed at any position, and when the developing solution is sprayed, the nozzle 6 moves along one diameter of the wafer 10 and uniformly sprays the developing solution. The arrangement mode of the two nozzles 6 enables the rotatable bearing platform 1 to drive the wafer 10 to rotate, so that the developing solution can be uniformly and evenly distributed, and the surface of the wafer 10 can be uniformly coated with the developing solution. The arrangement of the other nozzles 6 is not described in the present embodiment, but those skilled in the art will understand that other arrangements are also within the scope of the present embodiment.
In the present embodiment, the developing device further includes: and the nozzle 6 is arranged above the rotatable bearing platform 1, and the nozzle 6 sprays the developing solution on the wafer 10 on the rotatable bearing platform 1, so that the developing device does not need to rely on an external spraying device.
A fourth embodiment of the present invention relates to a developing method applied to the developing device in the above-described embodiments.
A specific flowchart of the developing method in the present embodiment is shown in fig. 5, and specifically includes:
step 401: the wafer is driven to rotate by the rotatable bearing platform, so that the developing solution used for developing treatment coats the whole wafer and reacts.
Specifically, before the wafer is driven to rotate by the rotatable bearing table, the developing solution is sprayed on the surface of the wafer, and the developing solution is preferably located at the center of the circle of the wafer or on any diameter of the wafer, so that the developing solution on the wafer can be uniformly distributed when the wafer is driven to rotate by the rotatable bearing table.
Step 402: the gas generated during the development process is extracted by the gas extraction pipe.
Specifically, in the developing process, the gas in the reaction device needs to be extracted by the gas extraction pipe, so as to avoid the defect that the developing solution is thrown to the inner wall of the reaction device and splashed back to the surface of the wafer in the spin coating process. The uniformity of the line width on the surface of the wafer is affected by the non-uniform temperature distribution on the surface of the wafer during the pumping.
Step 403: and detecting the surface temperature value of the wafer in the developing treatment process by using a temperature detector.
Step 404: and providing a reference temperature value, and controlling the heating wire to perform temperature compensation on the wafer according to the difference value between the surface temperature value of the wafer detected by the temperature detector and the reference temperature value.
Specifically, in the foregoing steps 403 and 404, the temperature detector is used to detect the surface temperature value of each region of the wafer during the developing process, the controller provides the reference temperature value, and the controller controls the heating wire to perform temperature compensation on the wafer according to the difference between the surface temperature value of the wafer detected by the temperature detector and the reference temperature value, so that the surface temperature values of each region of the wafer approach to the same reference temperature value, thereby avoiding the influence of the temperature difference caused by the air extraction during the developing process on the line width uniformity, and improving the line width uniformity during the developing process. In the present embodiment, the reference temperature value is a fixed value, and is generally 28 °, and of course, the reference temperature value may be adjusted according to actual needs.
Preferably, the actual temperature value of the center of the wafer is used as the reference temperature value, so that the temperature value of the center area of the wafer does not need to be adjusted, and the operation process is simplified.
Further, controlling the heating wire to perform temperature compensation on the wafer according to the difference between the surface temperature value of the wafer detected by the temperature detector and the reference temperature value, specifically: detecting the surface temperature value of the wafer by using each temperature detector; and acquiring a difference value between the surface temperature value of the wafer and the reference temperature value, and controlling the heating power of the annular heating wire corresponding to each temperature detector according to the difference value, so that the temperature of the wafer surface area corresponding to the annular heating wire is approximately consistent with the reference temperature value.
Specifically, each temperature detector, the annular heating wires corresponding to the temperature detectors and the controller form a group of independent temperature control subsystems, and the controller controls the annular heating wires in each group of temperature control subsystems to compensate different temperature differences according to different temperature values of the surfaces of the wafers measured by the temperature detectors in each group of temperature control subsystems, so that the accurate adjustment of the temperatures of different areas of the surfaces of the wafers is realized.
Further, before the rotatable carrying table is used to drive the wafer to rotate, the method further comprises: the wafer is fixed above the rotatable bearing platform, and the center of the rotatable bearing platform is overlapped with the circle center of the wafer. The arrangement in the scheme ensures that the linear speeds of all tangent lines of the wafer on the rotatable bearing platform are the same when the rotatable bearing platform rotates at a constant speed, and the developing solution can be uniformly coated on the wafer, so that the uniformity of the line width is further ensured.
Compared with the prior art, the embodiment of the invention provides a developing method which is applied to a developing device; the temperature detector is used for detecting the surface temperature value of the wafer in the developing treatment process, the controller is used for controlling the heating wire to perform temperature compensation on the wafer according to the difference value between the surface temperature value of the wafer detected by the temperature detector and the reference temperature value, so that the surface temperature value of the wafer approaches to the same reference temperature value, the influence of the temperature difference caused by air suction in the developing treatment on the uniformity of the line width is avoided, and the uniformity of the line width in the developing treatment process is further improved.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples for carrying out the invention, and that various changes in form and details may be made therein without departing from the spirit and scope of the invention in practice.
Claims (12)
1. A developing device, characterized by comprising: the wafer heating device comprises a rotatable bearing platform for bearing wafers, a heating wire arranged below the rotatable bearing platform, an exhaust pipe connected with the lower part of the rotatable bearing platform, a temperature detector arranged above the rotatable bearing platform and a controller for connecting the heating wire and the temperature detector;
the rotatable bearing platform drives the wafer to rotate so that developing solution used for developing treatment coats the whole wafer and reacts;
the gas extraction pipe is used for extracting gas generated in the developing treatment process;
the temperature detector is used for detecting the surface temperature value of the wafer in the developing treatment process;
the controller is used for providing a reference temperature value and controlling the heating wire to carry out temperature compensation on the wafer according to the detected difference value between the surface temperature value of the wafer and the reference temperature value.
2. The developing device according to claim 1, wherein said heating wire is plural, each of said heating wires is a loop heating wire, and plural of said loop heating wires are arranged radially in a loop from a direction away from a center of said rotatable bearing table.
3. The developing device according to claim 2, wherein said temperature detector is plural, each of said temperature detectors corresponding to one of said loop heating wires, a projection of said temperature detector falling on the corresponding loop heating wire.
4. The developing device according to claim 3, wherein the controller is specifically configured to obtain a difference between a surface temperature value of the wafer detected by each of the temperature detectors and a reference temperature value, and control the heating of the ring-shaped heating wire corresponding to the temperature detector according to the difference.
5. The developing device according to claim 1, further comprising a reference temperature detector fixed directly above the center of the rotatable susceptor for detecting a temperature value of a center of the wafer on the rotatable susceptor during the developing process, and taking the detected temperature value as the reference temperature value.
6. The developing device according to claim 2, wherein a pitch of adjacent ones of the plurality of loop heating wires is gradually narrowed from a direction away from a center of the rotatable bearing stage.
7. The developing device according to claim 2, wherein heating powers of a plurality of the loop heating wires are uniform.
8. The developing device according to claim 1, further comprising: and the nozzle is arranged above the rotatable bearing platform and used for spraying the developing solution to the wafer on the rotatable bearing platform.
9. The developing device according to claim 1, wherein the heating wire is in contact with a lower surface of the rotatable susceptor through which the wafer is heated.
10. A developing method, characterized by being applied to the developing device according to any one of claims 1 to 9;
the rotatable bearing platform is used for driving the wafer to rotate, so that the developing solution used for developing treatment is used for coating the whole wafer and carrying out reaction;
extracting gas generated in the developing process by using an exhaust tube;
detecting the surface temperature value of the wafer in the developing treatment process by using a temperature detector;
and providing a reference temperature value, and controlling the heating wire to perform temperature compensation on the wafer according to the difference value between the detected surface temperature value of the wafer and the reference temperature value.
11. The developing method according to claim 10, applied to the developing device according to claim 4;
the method is characterized in that the heating wire is controlled to perform temperature compensation on the wafer according to the difference value between the surface temperature value of the wafer detected by the temperature detector and the reference temperature value, and specifically comprises the following steps:
detecting a surface temperature value of the wafer by using each temperature detector;
obtaining the difference value between the surface temperature value of the wafer and the reference temperature value,
and controlling the heating of the annular heating wires corresponding to each temperature detector according to the difference value.
12. The developing method according to claim 10, wherein before the rotating the wafer by the rotatable susceptor, further comprising:
and fixing the wafer above the rotatable bearing platform, wherein the center of the rotatable bearing platform is overlapped with the circle center of the wafer.
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| CN201910295895.9A CN111812951A (en) | 2019-04-12 | 2019-04-12 | Developing device and developing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023019770A1 (en) * | 2021-08-20 | 2023-02-23 | 长鑫存储技术有限公司 | Temperature control apparatus and temperature control method |
| US11874609B2 (en) | 2021-09-29 | 2024-01-16 | Changxin Memory Technologies, Inc. | Temperature control device and temperature control method |
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2019
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023019770A1 (en) * | 2021-08-20 | 2023-02-23 | 长鑫存储技术有限公司 | Temperature control apparatus and temperature control method |
| US11874609B2 (en) | 2021-09-29 | 2024-01-16 | Changxin Memory Technologies, Inc. | Temperature control device and temperature control method |
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