TWI747094B - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The present invention provides a technique for appropriately peeling off an object fixed on the surface of a rotating substrate by a chemical liquid. The substrate processing apparatus 1 includes a processing unit 2. The processing unit 2 supplies the chemical liquid from the SPM nozzle 18 while rotating the substrate W around the rotation axis A1 in a horizontal posture. The nozzle moving unit 20 moves the SPM nozzle 18 in the first direction D1. The camera 153 includes the upper surface of the substrate W in the imaging target area. The image processing unit 3B detects the boundary B1 between the peeling area R1 where the resist has been peeled off and the non-peeling area R2 where the resist is fixed in the captured image PI1 obtained by the camera 153. The nozzle movement control device 3D controls the nozzle movement unit 20 to move the SPM nozzle 18 in the first direction D1 in accordance with the position of the boundary B1.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method for peeling off an object fixed on a substrate by a chemical liquid. The substrates to be processed include, for example, semiconductor substrates, liquid crystal display devices, and organic EL (Electroluminescence; electroluminescence) display devices such as FPE (Flat Panel Display) substrates, optical disk substrates, magnetic disk substrates, and magneto-optical devices. Substrates for discs, substrates for photomasks, ceramic substrates, substrates for solar cells, printed substrates, etc.

For example, in the photoresist process, which is one of the processes of manufacturing semiconductor devices, a resist (photosensitive polymerization) is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer) belonging to a substrate. After exposure, develop and make a resist pattern. The resist fixed on the surface of the wafer is peeled from the wafer by treating the surface of the wafer with a predetermined chemical solution after development.

In addition, in the manufacture of semiconductor devices, in order to form P/n junctions on the device, there may be cases in which an ion implantation process is performed. The circle irradiates an arsenic ion plasma beam (ion beam). Although the resist used here will eventually be removed from the wafer, it is known that ion implanted resists are difficult to remove. This reason is considered to be because the surface of the resist is hardened by ion implantation and the reactivity to the chemical solution is reduced.

In Patent Document 1, while rotating the substrate, a cleaning solution for peeling the resist is sprayed from the cleaning nozzle to the center of the substrate and spreads to the entire surface of the substrate by centrifugal force. After that, while the substrate is being rotated, the spray position of the cleaning solution on the substrate is changed so that it has moved from the center of the substrate. Offset the eccentric position, and set the distance between the gas ejection position side interface in the cleaning liquid ejection position and the cleaning liquid ejection position side interface in the gas ejection position of the gas nozzle to 9mm to 15mm, here In this state, gas is sprayed from the gas nozzle to the center of the substrate to form a drying area for the cleaning liquid. Next, the supply position of the cleaning solution is moved toward the periphery of the substrate at a speed slower than the speed at which the drying zone expands outward.

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2012-142617 A.

However, in Patent Document 1, the nozzle is simply moved at a speed corresponding to the expansion of the dry area. That is, the movement of the nozzle is controlled by the movement of the gas nozzle. Therefore, since the resist is not sufficiently removed from the substrate, there is a possibility that residues may be generated. In addition, in the case of the ion-implanted resist, it is easy to produce residue after the peeling treatment due to the hardening of the surface. Therefore, a technique for appropriately peeling off the resist fixed on the substrate is sought.

The object of the present invention is to provide a technique for appropriately peeling off an object fixed on the surface of a rotating substrate by a chemical liquid.

In order to solve the above-mentioned problems, the substrate processing apparatus of the first aspect is used to peel off an object fixed on the surface of the substrate by a chemical liquid, and is provided with: a substrate holder for holding the substrate in a horizontal posture; a rotating motor, The substrate held by the substrate holder is rotated around the axis of rotation in the vertical direction passing through the center of the substrate; the nozzle has an ejection port for spraying the chemical liquid; the motor is moved so that the nozzle faces the axis of rotation Orthogonal movement in the first direction; the camera includes the surface of the aforementioned substrate in the shooting target area; the boundary detection part is based on the shooting obtained by the aforementioned camera The image detects the boundary between the peeled area where the object on the surface of the substrate has been peeled off and the non-peeled area where the object is fixed; and the control unit is connected to the moving motor and responds to The position of the boundary detected by the boundary detection unit moves the nozzle in the first direction.

The substrate processing apparatus of the second aspect is the substrate processing apparatus as described in the first aspect, wherein the control unit impregnates the chemical liquid from the nozzle to the opposite side of the first direction sandwiching the boundary This way makes the aforementioned nozzle move.

The substrate processing apparatus of the third aspect is the substrate processing apparatus described in the first aspect or the second aspect, wherein the control unit determines the moving speed of the nozzle according to the moving speed of the boundary in the first direction.

The substrate processing apparatus of the fourth aspect is the substrate processing apparatus described in any one of the first aspect to the third aspect, wherein the ejection port of the nozzle faces a direction crossing the vertical direction.

The substrate processing apparatus of the fifth aspect is the substrate processing apparatus described in any one of the first aspect to the fourth aspect, wherein the first direction is a direction away from the rotation axis.

The substrate processing apparatus of the sixth aspect is the substrate processing apparatus described in the fifth aspect, wherein the control unit causes the chemical liquid from the nozzle to impinge to the impregnation position of the substrate from the position of the rotation axis toward The aforementioned first direction movement.

The substrate processing apparatus of the seventh aspect is the substrate processing apparatus described in the sixth aspect, wherein the boundary detection portion is on the second direction side of the captured image that sandwiches the rotation axis and is opposite to the first direction Detect the aforementioned junction in the area.

The substrate processing apparatus of the eighth aspect is the substrate processing apparatus described in any one of the first aspect to the seventh aspect, and further includes: a processing chamber that houses the substrate holder and the nozzle inside And the exhaust part, which exhausts the atmosphere of the aforementioned processing chamber to the outside.

The substrate processing apparatus of the ninth aspect is the substrate processing apparatus described in the eighth aspect, wherein the exhaust part generates suction in the radially outer side of the substrate.

The substrate processing apparatus of the tenth aspect is the substrate processing apparatus described in any one of the first aspect to the ninth aspect, which is further provided with: a first pipe connected to the aforementioned nozzle and causes the first The fluid flows; and the second pipe is connected to the nozzle and allows the second fluid to flow; the nozzle mixes the first fluid and the second fluid and ejects from the ejection port.

The eleventh aspect is the substrate processing apparatus described in the tenth aspect, which includes: a flow rate changing unit that changes the flow rate of the first fluid from the first pipe and the second fluid from the second pipe The flow rate of the fluid.

The substrate processing apparatus of the twelfth aspect is the substrate processing apparatus described in the tenth aspect or the eleventh aspect, wherein the first flow system includes sulfuric acid; the second flow system includes hydrogen peroxide water.

The substrate processing apparatus of the thirteenth aspect is the substrate processing apparatus described in any one of the first aspect to the twelfth aspect, which is further provided with: a liquid discharge piping, which is provided more than the substrate held by the substrate. The substrate held by the substrate holder is still below; the recovery pipe is provided below the substrate held by the substrate holder; and the switching part is switched between the discharge pipe and the recovery pipe to allow the liquid to flow into it Piping.

The fourteenth aspect of the substrate processing method is to peel off an object fixed on the surface of the substrate by a chemical solution, and includes: step (a), maintaining the substrate in a horizontal position; step (b), After the aforementioned step (a), the aforementioned substrate is rotated about the vertical axis of rotation; and the step (c) is after the aforementioned step (b), supplying a chemical solution to the aforementioned surface of the aforementioned substrate; aforementioned step (c) The system includes: step (c-1) of detecting the boundary between the peeled area where the object has been peeled off on the surface of the substrate and the non-peeled area where the object is fixed; and step (c-2) ), in response to the position of the boundary detected in the step (c-1), the position where the chemical liquid reaches the surface of the substrate is moved in the first direction orthogonal to the axis of rotation.

According to the substrate processing apparatus of the first aspect, the boundary between the peeled area and the unpeeled area is detected, and the nozzle is moved according to the position of the boundary. Therefore, since the impingement position of the chemical solution can be moved in accordance with the peeling condition of the target, the target fixed to the substrate can be peeled off effectively.

According to the substrate processing apparatus of the second aspect, the chemical solution can be supplied to the non-peeled area.

According to the substrate processing apparatus of the third aspect, the movement speed of the nozzle is determined according to the movement speed of the boundary in the first direction, whereby the nozzle can be moved at a speed suitable for the peeling of the object.

According to the substrate processing apparatus of the fourth aspect, compared to the case where the chemical liquid is sprayed vertically below, by spraying the chemical liquid in a direction crossing the vertical direction, the speed at which the chemical liquid reaches the substrate can be slowed down.

According to the substrate processing apparatus of the fifth aspect, the nozzle is moved in a direction away from the rotation axis, thereby moving the impingement position of the chemical solution from the inner side to the outer side of the substrate. Thereby, the object can be gradually peeled off from the inner side to the outer side of the substrate.

According to the substrate processing apparatus of the sixth aspect, the object can be gradually peeled off the substrate from the center of rotation of the substrate toward the outside.

According to the substrate processing apparatus of the seventh aspect, it is possible to prevent the fume generated by the nozzle or peeling from hindering the detection of the boundary.

According to the substrate processing apparatus of the eighth aspect, the smoke generated by the peeling can be discharged to the outside. Thereby, the detection accuracy of the boundary area in the surface of the substrate can be improved.

According to the substrate processing apparatus of the ninth aspect, the gas generated above the substrate due to peeling can be moved toward the radially outer side of the substrate. Thereby, the detection accuracy of the boundary area in the surface of the substrate can be improved.

According to the substrate processing apparatus of the tenth aspect, the chemical solution generated by mixing the first fluid and the second fluid can be supplied to the nozzle. Thereby, an active chemical solution can be supplied to the substrate.

According to the substrate processing apparatus of the eleventh aspect, the mixing ratio of the first fluid and the second fluid can be changed. With this, it is possible to supply the chemical solution with different concentrations of the first fluid and the second fluid to the substrate.

According to the substrate processing apparatus of the twelfth aspect, SPM (sulfuric acid/hydrogen peroxide mixture) can be generated by mixing sulfuric acid and hydrogen peroxide water, and the SPM can be supplied to the substrate. Thereby, the resist fixed to the substrate can be peeled off.

According to the substrate processing apparatus of the thirteenth aspect, the inflow destination of the used chemical solution can be switched between the drain pipe and the recovery pipe. Thereby, unnecessary liquid medicine can be discharged and necessary liquid medicine can be recovered.

According to the substrate processing method of the fourteenth aspect, the boundary between the peeled area and the unpeeled area is detected and the nozzle is moved according to the position of the boundary. Therefore, since the impingement position of the chemical solution can be moved in accordance with the peeling condition of the target, the target fixed to the substrate can be peeled off effectively.

1: Substrate processing equipment

2: processing unit

3: control device

3B: Image Processing Department (Border Detection Department)

3C: Shooting control device

3D: Nozzle movement control device

4: fluid tank

5: Frame

6: Storage box

7: Chamber (processing room)

8: Rotating fixture

9: SPM supply unit

10: Cleaning fluid supply unit

11: Treatment hood

11a: upper end

12: Next door

13: Exhaust duct (exhaust part)

14: FFU

15: Rotation shaft

16: Rotation base

16a: upper surface

17: Clamping member (substrate holder)

18: SPM nozzle

19: Nozzle arm

20: Nozzle moving unit

21: Sulfuric acid supply unit

22: Hydrogen peroxide water supply unit

23: Sulfuric acid piping

24: Sulfuric acid valve

25: Sulfuric acid flow adjustment valve

26: Sulfuric acid supply department

27: Sulfuric acid tank

28: Sulfuric acid supplement piping

29: Recovery slot

30: Infusion piping

31: The first infusion device

32: Sulfuric acid supply piping

33: temperature regulator

34: The second infusion device

35: Hydrogen peroxide water piping

36: Hydrogen peroxide water valve

37: Hydrogen peroxide water flow adjustment valve

40: Cylinder member

41: The first cover

42: The second cover

43: The first protective cover

43a, 44a: inner wall

43b: outer wall

44: second protective cover

45: Third protective cover

46: Protective cover lifting unit

47: Cleaning fluid nozzle

48: Cleaning fluid piping

49: Cleaning fluid valve

50: The first groove

51: Drain

52: The first drain piping

53: second groove

54: recovery port

55: Common piping

56: Recycling piping

57: The second drain piping

58: Recovery valve

59: Drain valve

63: lower end

64: cylindrical part

65: middle section

66, 68, 71: upper end

67, 70: Cylinder part

101: The first circulation space

102: The second circulation space

150: foreign body detection unit

152: Shooting unit

153: Camera

181: Flow Path

182: Ejector

A1: Rotation axis

B1: junction

C: substrate container

CR: substrate handling robot

d: predetermined distance

D1: First direction

D2: second direction

IR: Index Robot

JA1: Judgment area

L1: Central position

L2: Perimeter position

L12: middle position

LP: load port

LP1: Implantation position

M: Rotating motor (rotating motor)

PI1: Take an image

R1: Stripping area

R2: Unstripped area

S1: Moving in process

S2: Rotation start process

S4: Cleaning process

S5: Drying process

S6: Stop rotating process

S7: Moving out process

S31: The first SPM process

S32: Second SPM process

SA1: The first area

SA2: second area

W: substrate

Fig. 1 is a schematic plan view for explaining the internal layout of the substrate processing apparatus 1 of the embodiment.

Fig. 2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2 of the embodiment.

Fig. 3 is a cross-sectional view schematically showing the tip portion of the SPM nozzle 18 of the embodiment.

[Fig. 4] is a block diagram for explaining the electrical configuration of the main parts of the substrate processing apparatus 1. [Fig.

[FIG. 5] A flowchart for explaining an example of substrate processing by the processing unit 2.

[FIG. 6] A perspective view for schematically showing the processing unit 2 in the first SPM step S31.

Fig. 7 is a diagram for displaying an example of the captured image PI1 obtained by the camera 153 in the first SPM step S31.

[FIG. 8] A schematic side view for explaining the operation of each of the first guard 43 and the second guard 44 in each process.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the components described in this embodiment are only examples, and are not intended to limit the scope of the present invention to these embodiments. In the drawings, for ease of understanding, there may be cases where the size and number of each part are shown exaggeratedly or simplified as needed.

It is used to express relative positional relationship or absolute positional relationship (such as "along", "parallel", "orthogonal", "center", "coaxial", etc.), unless otherwise specified It strictly represents these positional relationships, and also represents a state in which the angle or distance is relatively displaced within a tolerance or a range where the same degree of function can be obtained. In addition, the expression of "moving to" means not only moving in parallel to a specific direction, but also includes a combined direction of moving to a specific direction and a direction orthogonal to the specific direction, unless otherwise specified.

The performance used to express the state of equality (for example, "same", "equal", "homogeneous", etc.), unless otherwise specified, not only indicates a quantitatively and strictly equal state, but also indicates that there is a tolerance or can be obtained The state of the difference of functions of the same degree. It is used to express the performance of shapes (such as "square shape" or "cylindrical shape", etc.). Unless otherwise specified, it is not only geometrically and strictly expressing these shapes, but also means that the same degree of effect can be obtained The range of has a shape such as unevenness or chamfering. The expression of "has," "has," "includes," "includes," or "contains" a constituent element is not an exclusive expression to exclude the existence of other constituent elements. The so-called expression of "on ~", unless otherwise specified, not only indicates the situation where two elements are in contact, but also includes the situation where the two elements are separated.

[(1) Implementation form]

FIG. 1 is a schematic plan view for explaining the internal layout of the substrate processing apparatus 1 of the embodiment. The substrate processing apparatus 1 is a blade type apparatus for processing disk-shaped substrates W such as semiconductor wafers one by one.

The substrate processing apparatus 1 includes: a plurality of load ports LP, which hold a plurality of substrate receiving containers C for accommodating a substrate W; and a plurality of (for example, twelve) processing units 2 are provided by a chemical solution The processing liquid processes the substrate W transported from the plurality of load ports LP; the transport robot transports the substrate W from the plurality of load ports LP to the plurality of processing units 2; and the control device 3 controls the substrate processing device 1. The handling robot system includes: an indexer robot IR, which transports the substrate W on the path between the load port LP and the processing unit 2; and the substrate handling robot CR, which is connected between the indexer robot IR and the processing unit 2 The substrate W is transported on the path.

The substrate processing apparatus 1 includes a plurality of fluid boxes (fluid boxes) 4, which are storage valves, etc., and a storage box 6, which contains a sulfuric acid tank 27 (refer to FIG. 2) for storing sulfuric acid, and the like. The processing unit 2 and the fluid tank 4 are arranged in a frame 5 of the substrate processing apparatus 1 and covered by the frame 5 of the substrate processing apparatus 1. In the example of FIG. 1, although the storage box 6 is arranged outside the frame 5 of the substrate processing apparatus 1, it may be accommodated in the frame 5. The storage tank 6 may be a tank corresponding to a plurality of fluid tanks 4, or may be a plurality of tanks provided in a one-to-one correspondence with the fluid tanks 4.

The twelve processing units 2 form four towers arranged to surround the substrate transfer robot CR when viewed from above. Each tower system contains three processing units 2 stacked one above the other. The four storage boxes 6 correspond to the four towers respectively. Similarly, the four fluid tanks 4 correspond to the four towers, respectively. The sulfuric acid stored in the sulfuric acid tank 27 in each storage tank 6 is supplied to the three processing units 2 corresponding to the storage tank 6 via the fluid tank 4 corresponding to the storage tank 6.

FIG. 2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2 of the embodiment. The processing unit 2 includes: a box-shaped chamber (chamber) 7 with an internal space; a spin chuck (substrate holding unit) 8 is installed inside the chamber 7 to hold a substrate W in a horizontal position, And the substrate W is rotated around the vertical axis of rotation A1 passing through the center of the substrate W; the SPM supply unit 9 supplies sulfuric acid (H ₂ SO ₄ ) and hydrogen peroxide to the upper surface of the substrate W held by the rotation jig 8 The SPM of the mixed liquid of water (H ₂ O ₂ ); the foreign matter detection unit 150 detects the resist residue contained in the SPM discharged from the substrate W; the rinse liquid supply unit 10 is used to rotate The upper surface of the substrate W held by the jig 8 is supplied with a cleaning liquid; and a cylindrical processing cup 11 surrounds the rotation jig 8. The chamber 7 is an example of a storage chamber for accommodating each of the clamping members 17 and the SPM nozzle 18.

In the following description, the aspect orthogonal to the rotation axis A1 is referred to as the "radial direction". In addition, the radial direction toward the rotation axis A1 (the direction approaching the rotation axis A1) is referred to as the "radial inner direction", and the radial direction toward the opposite side of the rotation axis A1 side (away from the rotation axis A1) The direction) is called the "radial direction outside direction". There may be cases where the rotation direction around the rotation axis A1 is referred to as the "circumferential direction".

The chamber 7 includes: a box-shaped partition wall 12; an FFU (fan filter unit; fan filter unit) 14 as an air supply unit, which transports and cleans the partition wall 12 (equivalent to the inside of the chamber 7) from the upper part of the partition wall 12 Air; and an exhaust device (not shown), which exhausts the gas in the chamber 7 from the lower portion of the partition wall 12.

As shown in FIG. 2, the FFU 14 is arranged above the partition wall 12 and installed on the top of the partition wall 12. The FFU 14 transports clean air into the chamber 7 from the top of the partition wall 12. An exhaust device (not shown) is connected to the bottom of the processing cover 11 via an exhaust duct 13 connected to the processing cover 11 and sucks the inside of the processing cover 11 from the bottom of the processing cover 11. With the FFU 14 and the exhaust device (not shown), a down flow (down flow) is formed in the chamber 7. The exhaust duct 13 constitutes an exhaust part for exhausting the atmosphere inside the chamber 7 to the outside.

A clamping jig is used as the rotation jig 8. The clamping jig clamps the substrate W in the horizontal direction and holds the substrate W horizontally. Specifically, the spin jig 8 includes: a spin motor (rotation unit) M; a spin axis 15 integrated with the drive shaft of the spin motor M; and a disk-shaped spin base (Spin base) 16, is installed slightly horizontally on the upper end of the rotation shaft 15.

The rotation base 16 includes a horizontal and circular upper surface 16a having an outer diameter larger than the outer diameter of the substrate W. Plural (three or more, for example, six) clamping members 17 are arranged on the peripheral edge of the upper surface 16a. The plurality of clamping members 17 are arranged on a circumference corresponding to the outer peripheral shape of the substrate W at appropriate intervals, for example, at equal intervals, in the peripheral edge portion of the upper surface of the rotation base 16.

The SPM supply unit 9 includes an SPM nozzle 18; a nozzle arm 19 with the SPM nozzle 18 attached to the front end; and a nozzle moving unit 20 that moves the nozzle arm 19 to thereby move the SPM nozzle 18. The nozzle moving unit 20 has a moving motor that moves the nozzle moving unit 20 in a horizontal direction orthogonal to the rotation axis A1. The SPM nozzle 18 is, for example, a straight nozzle that ejects SPM in a continuous flow state. The SPM nozzle 18 is attached to the nozzle arm 19 in a vertical posture for ejecting the processing liquid in a direction perpendicular to the upper surface of the substrate W, for example. The nozzle arm 19 is extended in the horizontal direction. The movement motor included in the nozzle movement unit 20 is connected to the control device 3 and operates under the control of the control device 3.

The nozzle moving unit 20 moves the nozzle arm 19 horizontally around the swing axis, thereby moving the SPM nozzle 18 horizontally. The nozzle moving unit 20 moves the SPM nozzle 18 horizontally between the processing position and the retracted position of the substrate W. The processing position of the substrate W is the position where the SPM ejected from the SPM nozzle 18 reaches the upper surface of the substrate W. The retreat position is a position where the SPM nozzle 18 has been set around the rotation jig 8 when viewed from above. In the present embodiment, the processing position includes, for example, the center position L1, which is the position where the SPM ejected from the SPM nozzle 18 reaches the center of the upper surface of the substrate W.

The SPM supply unit 9 further includes a sulfuric acid supply unit 21 that supplies sulfuric acid to the SPM nozzle 18 and a hydrogen peroxide water supply unit 22 that supplies hydrogen peroxide water to the SPM nozzle 18. The sulfuric acid supply unit 21 includes: a sulfuric acid pipe 23, one end is connected to the SPM nozzle 18; a sulfuric acid valve 24 is used to open and close the sulfuric acid pipe 23; a sulfuric acid flow adjustment valve 25 is used to adjust the opening degree of the sulfuric acid pipe 23, and Adjust the flow rate of sulfuric acid to flow through the sulfuric acid pipe 23; and the sulfuric acid supply part 26 is connected to the other end of the sulfuric acid pipe 23. The sulfuric acid valve 24 and the sulfuric acid flow rate adjustment valve 25 are housed in the fluid tank 4. The sulfuric acid supply unit 26 is housed in the storage tank 6. The sulfuric acid flow rate adjustment valve 25 and the sulfuric acid supply unit 26 are connected to the control device 3 and operate under the control of the control device 3.

The sulfuric acid flow adjustment valve 25 includes: a valve body, which is provided with a valve seat inside; a valve body, which is used to open and close the valve seat; and an actuator, which makes the valve body in an open position and a closed position Move between. The same applies to other flow adjustment valves.

The sulfuric acid supply unit 26 includes a sulfuric acid tank 27 for storing sulfuric acid to be supplied to the sulfuric acid pipe 23; a sulfuric acid replenishing pipe 28 for replenishing new liquid sulfuric acid to the sulfuric acid tank 27; a recovery tank 29; and an infusion pipe 30 , Is used to transport the sulfuric acid stored in the recovery tank 29 to the sulfuric acid tank 27. Here, the “new liquid” refers to a liquid that is not used in the processing of the substrate W in the processing unit 2. The sulfuric acid supply unit 26 includes: a first infusion device 31 that moves sulfuric acid in the recovery tank 29 to the infusion pipe 30; a sulfuric acid supply pipe 32 that connects the sulfuric acid tank 27 and the sulfuric acid pipe 23; and a temperature regulator 33 The sulfuric acid flowing in the sulfuric acid supply pipe 32 is heated and the temperature is adjusted; and the second infusion device 34 moves the sulfuric acid in the sulfuric acid tank 27 to the sulfuric acid supply pipe 32.

The temperature regulator 33 may be immersed in the H ₂ SO ₄ of the sulfuric acid tank 27, and may be interposed in the middle of the sulfuric acid supply pipe 32 as shown in FIG. 2. In addition, the sulfuric acid supply unit 26 may be further provided with a filter which filters the sulfuric acid flowing through the sulfuric acid supply pipe 32 and/or a thermometer which measures the temperature of the sulfuric acid flowing through the sulfuric acid supply pipe 32. In addition, in this embodiment, although the sulfuric acid supply part 26 has two tanks, the structure of the recovery tank 29 may be omitted, and the sulfuric acid recovered from the processing cover 11 may be directly supplied to the sulfuric acid tank 27. The first infusion device 31 and the second infusion device 34 are, for example, pumps. The pump system sucks the sulfuric acid in the sulfuric acid tank 27 and discharges the sucked sulfuric acid.

The hydrogen peroxide water supply unit 22 includes: a hydrogen peroxide water pipe 35 connected to the SPM nozzle 18; a hydrogen peroxide water valve 36 for opening and closing the hydrogen peroxide water pipe 35; and hydrogen peroxide water The flow rate adjustment valve 37 adjusts the opening degree of the hydrogen peroxide water valve 36 and adjusts the flow rate of the hydrogen peroxide water flowing through the hydrogen peroxide water valve 36. The hydrogen peroxide water valve 36 and the hydrogen peroxide water flow control valve 37 are housed in the fluid tank 4. The hydrogen peroxide water supply source stored in the storage tank 6 supplies hydrogen peroxide water at a normal temperature (approximately 23° C.) without temperature adjustment to the hydrogen peroxide water pipe 35. The hydrogen peroxide water valve 36 and the hydrogen peroxide water flow rate adjustment valve 37 are connected to the control device 3 and can be operated under the control of the control device 3.

When the sulfuric acid valve 24 and the hydrogen peroxide water valve 36 are opened, the sulfuric acid from the sulfuric acid pipe 23 and the hydrogen peroxide water system from the hydrogen peroxide water pipe 35 are supplied into the housing (not shown) of the SPM nozzle 18. And is fully mixed (stirred) in the shell. Through this mixing, sulfuric acid and hydrogen peroxide water are uniformly mixed with each other to generate SPM, which is a mixed liquid of sulfuric acid and hydrogen peroxide water. The SPM system contains peroxymonosulfuric acid (H ₂ SO ₅ ), which has strong acidifying power, and is heated to a temperature higher than the temperature of the sulfuric acid and hydrogen peroxide water before mixing (100°C or higher, for example, 160°C to 220°C). The generated high-temperature SPM is ejected from the ejection port 182 (refer to FIG. 3) that is open at the front end (for example, the lower end) of the housing of the SPM nozzle 18. An example of the mixing part of the shell system connection part of the SPM nozzle 18.

FIG. 3 is a cross-sectional view for schematically showing the tip portion of the SPM nozzle 18 of the embodiment. The SPM nozzle 18 has a flow path 181 extending in the vertical direction inside, and the front end of the flow path 181 communicates with the ejection port 182. The ejection port 182 is provided to eject SPM, and is provided on the side surface of the lower end of the SPM nozzle 18 and faces the horizontal direction. The SPM system supplied from the SPM supply unit 9 to the SPM nozzle 18 passes through the flow path 181 and moves in the vertical direction, and then is ejected in the horizontal direction through the ejection port 182 at the lower end of the SPM nozzle 18. The SPM ejected from the ejection port 182 falls in a vertical direction by gravity. In the case where the SPM nozzle 18 is arranged above the substrate W, the SPM ejected from the SPM nozzle 18 is attached to the surface of the substrate W.

In this way, in the SPM nozzle 18, by setting the ejection direction of the SPM to the horizontal direction, the speed (impingement speed) when the SPM is landed on the substrate W located below the SPM nozzle 18 can be alleviated. With this, in the case where a predetermined pattern (wiring pattern, etc.) is formed on the upper surface of the substrate W, it is possible to suppress the collapse of the pattern due to the impregnation of the SPM. In addition, since the ejection port 182 faces the horizontal direction, it is possible to reduce dripping more than when the opening faces the vertical direction. Here, the term "drip" refers to a situation where the liquid falls from the SPM nozzle 18 as droplets when the liquid is controlled so as not to eject the liquid from the SPM nozzle 18 (for example, when the sulfuric acid valve 24 and the hydrogen peroxide valve 36 are closed). In addition, the ejection port 182 does not need to face the horizontal direction upright, but only needs to face a direction that intersects the vertical direction. Therefore, for example, the ejection port 182 may be directed toward the combined direction of the vertical downward direction and the horizontal direction, thereby ejecting the SPM from diagonally downward.

The sulfuric acid flow rate adjustment valve 25 and the hydrogen peroxide water flow rate adjustment valve 37 adjust the opening degree of the sulfuric acid pipe 23 and the hydrogen peroxide water pipe 35 to adjust the sulfuric acid concentration of the SPM sprayed from the SPM nozzle 18 within a predetermined range. . For example, the sulfuric acid concentration (mixing ratio) of SPM sprayed from the SPM nozzle 18 is H ₂ SO ₄ :H ₂ O ₂ =20:1 (high concentration state rich in sulfuric acid) to 2:1 (rich in sulfuric acid) in a flow ratio. It is adjusted within the range of the low concentration state of hydrogen peroxide water, and more preferably within the range of H ₂ SO ₄ :H ₂ O ₂ =20:1 to 3:1. The operations of the sulfuric acid flow rate adjustment valve 25 and the hydrogen peroxide water flow rate adjustment valve 37 are controlled by the control device 3. The sulfuric acid flow rate adjustment valve 25, the hydrogen peroxide water flow rate adjustment valve 37, and the control device 3 are examples of a flow rate changing unit.

The sulfuric acid supply unit 26 reuses the SPM recovered from the processing cover 11 as sulfuric acid. The SPM system recovered from the processing cover 11 is supplied to the recovery tank 29 and stored in the recovery tank 29. As time passes, the aqueous hydrogen peroxide contained in the SPM is decomposed, and the SPM stored in the recovery tank 29 is changed to sulfuric acid. However, since the sulfuric acid system changed from SPM contains a lot of water, the concentration is adjusted appropriately. In the sulfuric acid supply unit 26, the sulfuric acid system in the recovery tank 29 is sent to the sulfuric acid tank 27, and the concentration of sulfuric acid is adjusted in the sulfuric acid tank 27. In this way, the SPM system is reused as sulfuric acid.

The cleaning liquid supply unit 10 includes a cleaning liquid nozzle 47. The cleaning liquid nozzle 47 is, for example, a straight nozzle for ejecting liquid in a continuous flow state, and the ejection port is fixedly arranged above the rotation jig 8 toward the center of the upper surface of the substrate W. In addition, the cleaning liquid nozzle 47 may be a movable nozzle, which is moved in a horizontal direction or a vertical direction by the action of a motor that operates under the control of the control device 3. The control device 3 can also move the cleaning liquid nozzle 47 in a horizontal direction, thereby scanning the inside of the upper surface of the substrate W with the cleaning liquid.

The cleaning liquid piping 48 is connected to the cleaning liquid nozzle 47, and the cleaning liquid piping 48 is supplied with the cleaning liquid from the cleaning liquid supply source. A cleaning liquid valve 49 is interposed in the middle of the cleaning liquid piping 48, and the cleaning liquid valve 49 is used to switch between the cleaning liquid supply from the cleaning liquid nozzle 47 and the stopping of the cleaning liquid supply from the cleaning liquid nozzle 47. When the cleaning liquid valve 49 is opened, the cleaning liquid supplied from the cleaning liquid piping 48 to the cleaning liquid nozzle 47 is ejected from a spray port set at the lower end of the cleaning liquid nozzle 47. In addition, when the washing liquid valve 49 is closed, the supply of washing liquid from the washing liquid pipe 48 to the washing liquid nozzle 47 is stopped. The cleaning fluid is, for example, DIW (deionized water), but it is not limited to DIW. The cleaning fluid can also be, for example, carbonated water, electrolyzed ionized water, Any of hydrogen water, ozone water, ammonia water, and hydrochloric acid water with a dilution concentration (for example, about 10 ppm to 100 ppm). In addition, the cleaning fluid can be used at room temperature, or it can be heated to warm water by a heater for later use.

The processing cover 11 is arranged in an outer direction (a direction away from the rotation axis A1) than the substrate W held by the rotation jig 8. The processing cover 11 is formed using an insulating material, for example. The processing cover 11 surrounds the side of the rotation base 16. When the processing liquid is supplied to the substrate W while the rotation jig 8 is rotating the substrate W, the processing liquid system that has been supplied to the substrate W is thrown away to the periphery of the substrate W. When supplying the processing liquid to the substrate W, the upper end portion 11 a of the processing cover 11 opened upward is arranged above the rotation base 16. Therefore, the processing liquid system such as chemical liquid or water that has been discharged to the periphery of the substrate W is caught by the processing cover 11. In addition, the processing liquid system caught by the processing cover 11 is transported to the recovery tank 29 or a waste liquid device not shown.

The processing cover 11 includes: a cylindrical member 40; a plurality of cups (the first cup 41, the second cup 42) are fixed on the inner side of the cylindrical member 40 so as to double-enclose the rotation jig 8 Configuration; a plurality of protective covers (the first protective cover 43, the second protective cover 44 and the third protective cover 45) are used to catch the processing liquid (medical solution or cleaning liquid) scattered around the substrate W; and protection The cover raising and lowering unit (distribution destination switching unit) 46 raises and lowers each of the first protective cover 43, the second protective cover 44, and the third protective cover 45 independently. The protective cover lifting unit 46 is composed of, for example, a ball screw mechanism, and includes a lifting motor for lifting and lowering the first protective cover 43, the second protective cover 44, and the third protective cover 45. The lifting motor is connected to the control device 3 and can operate under the control of the control device 3.

The treatment cover 11 is foldable, and the protective cover lifting unit 46 lifts at least one of the three protective covers of the first protective cover 43, the second protective cover 44, and the third protective cover 45, thereby performing the treatment cover 11 Unfolding and folding. The first cover 41 has an annular shape, and surrounds the rotation jig 8 between the rotation jig 8 and the cylindrical member 40. The first cover 41 has a substantially rotationally symmetrical shape with respect to the rotation axis A1 of the substrate W. The first cover 41 has a U-shaped cross-section and partitions the first groove 50. The first groove 50 is used to collect and discharge the processing liquid used in the processing of the substrate W. A drain port 51 is opened at the lowest part of the bottom of the first groove 50, and a first drain pipe 52 is connected to the drain port 51. The treatment liquid system introduced into the first liquid discharge pipe 52 is sent to a liquid discharge device (not shown) and processed in the liquid discharge device.

The second cover 42 is annular and surrounds the periphery of the first cover 41. The second cover 42 has a substantially rotationally symmetrical shape with respect to the rotation axis A1 of the substrate W. The second cover 42 has a U-shaped cross-section and partitions a second groove 53. The second groove 53 collects and recovers the processing liquid used in the processing of the substrate W. A drain and recovery port 54 is opened at the lowest part of the bottom of the second groove 53, and a common pipe 55 is connected to the drain and recovery port 54. The recovery pipe 56 and the second drain pipe 57 are respectively branched and connected to the common pipe 55. The other end of the recovery pipe 56 is connected to the recovery tank 29 of the sulfuric acid supply unit 26. A recovery valve 58 is sandwiched between the recovery pipe 56, and a drain valve 59 is sandwiched between the second drain pipe 57. When the drain valve 59 is closed and the recovery valve 58 is opened, the liquid system circulating in the common pipe 55 is guided to the recovery pipe 56. In addition, by closing the recovery valve 58 and opening the drain valve 59, the liquid system circulating through the common pipe 55 is guided to the second drain pipe 57. That is, the recovery valve 58 and the drain valve 59 function as a switching unit for switching the flow destination of the liquid flowing through the common pipe 55 between the recovery pipe 56 and the second drain pipe 57 . The second liquid discharge pipe 57 is specifically used to discard the washing liquid when washing the inner wall 44a of the second protective cover 44, the second cover 42, and the common pipe 55.

The innermost first protective cover 43 surrounds the rotation jig 8 and has a substantially rotationally symmetrical shape with respect to the rotation axis A1 of the substrate W caused by the rotation jig 8. The first shield 43 includes: a cylindrical lower end 63 that surrounds the rotation jig 8; a cylindrical portion 64 that extends from the upper end of the lower end 63 toward the outside (distance from the rotation axis A1 of the substrate W) Direction) movement; the cylindrical middle section 65 extends vertically upward from the outer peripheral portion of the upper surface of the cylindrical section 64; and the annular upper end 66 is from the upper end of the middle section 65 toward the inner direction (close to the substrate The direction of the W rotation axis A1) extends diagonally upward. The lower end 63 is located on the first groove 50 and is accommodated in the first groove 50 when the first protective cover 43 and the first cover 41 are closest to each other. In a plan view, the inner peripheral end of the upper end portion 66 has a circular shape larger than the diameter of the substrate W held by the rotation jig 8. In addition, the cross-sectional shape of the upper end portion 66 may be linear as shown in FIG. 2, or may be extended by drawing a smooth arc, for example.

The first protective cover 43 is made of, for example, a drug-resistant resin material (such as PFA (tetrafluoroethylene-par fluoro alkyl vinyl ether copolymer; tetrafluoroethylene copolymer) 物), PCTFE (polymonochlorotrifluoroethyle; polychlorotrifluoroethylene), PTFE (polytetrafluoroethylene; polytetrafluoroethylene) and other fluororesins). The entire area of the first protective cover 43 including the inner wall 43a is white. White series include ivory, milky white, off-white, skin color, light gray, custard cream, beige and so on.

The second protective cover 44, which is ranked second from the inside, is attached to the outer side of the first protective cover 43 and surrounds the rotation jig 8 and has approximately rotational symmetry with respect to the rotation axis A1 of the substrate W caused by the rotation jig 8. shape. The second protective cover 44 has: a cylindrical portion 67 which is coaxial with the first protective cover 43; Extend from above. In a plan view, the inner peripheral end of the upper end portion 68 has a circular shape larger than the diameter of the substrate W held by the rotation jig 8. In addition, the cross-sectional shape of the upper end portion 68 may be linear as shown in FIG. 2, or may be extended by drawing a smooth arc, for example. The front end of the upper end 68 is the opening of the upper end 11 a of the processing cover 11.

The cylindrical portion 67 is located on the second groove 53. In addition, the upper end 68 is arranged to overlap the upper end 66 of the first protective cover 43 in the vertical direction, and is held relative to the upper end 66 when the first protective cover 43 and the second protective cover 44 are closest to each other. A slight gap is formed by approaching. The second protective cover 44 is formed using, for example, a chemical-resistant resin material (for example, fluororesin such as PFA, PCTFE, and PTFE). The entire area of the second protective cover 44 including the inner wall 44a is white. White series include ivory, milky white, off-white, skin color, light gray, custard cream, beige and so on.

The outermost third protective cover 45 surrounds the rotation jig 8 in the outer side of the second protective cover 44 and has a substantially rotationally symmetrical shape with respect to the rotation axis A1 of the substrate W caused by the rotation jig 8. The third protective cover 45 has: a cylindrical portion 70 which is coaxial with the second protective cover 44; Extend from above. In a plan view, the inner peripheral end of the upper end portion 71 has a circular shape larger than the diameter of the substrate W held by the rotation jig 8. In addition, the cross-sectional shape of the upper end portion 71 may be linear as shown in FIG.

The third protective cover 45 is formed using, for example, a chemical-resistant resin material (for example, fluororesin such as PFA, PCTFE, and PTFE). The entire area of the third protective cover 45 including the inner wall is white. White series include ivory, milky white, off-white, skin color, light gray, custard cream, beige and so on.

In this embodiment, the first groove 50 of the first cover 41, the inner wall 43a of the first protective cover 43, and the outer periphery of the housing of the rotation jig 8 define the first circulation space (in other words, the drainage space) 101 , The first circulation space 101 is used to guide the chemical solution that has been used in the processing of the substrate W. In addition, the second groove 53 of the second cover 42, the outer wall 43b of the first protective cover 43, and the inner wall 44a of the second protective cover 44 divide the second circulation space (in other words, the recovery space) 102, the second circulation space 102 is used to guide the chemical solution that has been used in the processing of the substrate W. The first circulation space 101 and the second circulation space 102 are isolated from each other.

The protective cover lifting unit 46 lifts each of the first protective cover 43, the second protective cover 44, and the third protective cover 45 between an upper position and a lower position, where the upper end of the protective cover is located above the substrate W In the lower position, the upper end of the shield is located below the substrate W. The protective cover lifting unit 46 can hold each of the first protective cover 43, the second protective cover 44, and the third protective cover 45 at any position between the upper position and the lower position. The supply of the processing liquid to the substrate W and the drying of the substrate W are in a state where one of the first protective cover 43, the second protective cover 44, and the third protective cover 45 faces the peripheral end of the substrate W (arranged in Can capture the status of the location).

In a state where the innermost first protective cover 43 and the peripheral end of the substrate W face the processing cover 11 facing the first protective cover (refer to FIG. 8(a)), the first protective cover 43 The third protective cover 45 is all arranged at the upper position. In a state where the second protective cover 44, which is arranged second from the inside, faces the processing cover 11 facing the peripheral end of the substrate W (refer to FIG. 8(b)) , The second protective cover 44 and the third protective cover 45 are arranged in the upper position, and the first protective cover 43 is arranged in the lower position. In a state where the outermost third protective cover 45 faces the processing cover 11 facing the peripheral end of the substrate W (refer to FIG. 8(c)), the third protective cover 45 The first protective cover 43 and the second protective cover 44 are disposed in the lower position. In the retreat state (refer to FIG. 2) for retreating all the protective covers from the peripheral end surface of the substrate W, the first protective cover 43 to the third protective cover 45 are all arranged in the lower position.

The foreign matter detection unit 150 includes a photographing unit 152 that photographs the SPM discharged from the substrate W. The foreign matter detection unit 150 detects the resist residue contained in the SPM discharged from the substrate W according to the color of the chemical liquid contained in the image taken by the photographing unit 152. The foreign object detection unit 150 not only includes the imaging unit 152, but also includes the image processing unit 3B and the imaging control device 3C to be described next in the control device 3.

The photographing unit 152 includes a camera 153 and a light source (not shown). The camera 153 includes: a lens; a photographing element, which converts the optical image formed by the lens into an electrical signal; and a photographing circuit, which generates an image signal based on the converted electrical signal and sends it to the control device 3 The video processing unit 3B (refer to FIG. 4). The imaging element system includes a CCD (Charge Coupled Device) imaging sensor, a CMOS (Complementary Metal-Oxide Semiconductor) imaging sensor, and the like. The camera 153 may be a high-speed camera that can shoot at a speed of thousands to tens of thousands of images in one second, or a general camera that can shoot at a speed of about ten to a hundred images in one second. The captured image is not limited to a still image, but can also be a dynamic image. The lens of the camera 153 faces the upper surface of the rotation base 16. The imaging target area captured by the camera 153 may include, for example, the entire upper surface of the substrate W held by the respective clamping members 17 and the SPM nozzle 18 located at the processing position. However, the camera 153 may also be installed in such a way that only the determination area JA1 described later is photographed. The light source is arranged above the rotation base 16 and illuminates the upper surface of the substrate W held by each clamping member 17. The light source is, for example, a light source of white light.

FIG. 4 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1. The control device 3 is configured using, for example, a microcomputer. The control device 3 has a CPU (Central Processing Unit; central processing unit) and other arithmetic units, solid-state memory devices (solid-state memory devices), hard disk drives (hard disk drives) and other memory units, as well as input and output units. The memory unit includes a computer-readable recording medium, and the computer-readable recording medium records a computer program for the arithmetic unit to execute. A step group is incorporated in the recording medium, and the step group causes the control device 3 to execute the resist removal process described later.

The control device 3 controls the rotation motor M (rotation motor), the nozzle moving unit 20 (moving motor), the shield lifting unit 46, the first infusion device 31, the second infusion device 34, the temperature regulator 33, etc., according to a pre-defined program Actions. In addition, the control device 3 controls the opening and closing operations of the sulfuric acid valve 24, the hydrogen peroxide water valve 36, the cleaning liquid valve 49, etc., in accordance with a predetermined program. In addition, the control device 3 adjusts the opening degree of the sulfuric acid flow rate adjustment valve 25 and the hydrogen peroxide water flow rate adjustment valve 37 in accordance with a predetermined program.

The control device 3 includes an image processing unit 3B, an imaging control device 3C, and a nozzle movement control device 3D. These functional processing units are realized by software, for example, by the control device 3 executing predetermined program processing.

A camera 153 is connected to the control device 3. The imaging control device 3C controls the imaging operation of the camera 153. The image signal from the camera 153 is input to the image processing unit 3B. The image processing unit 3B performs image processing on the captured image displayed by the image signal. The image processing unit 3B detects the boundary B1 between the peeling area R1 and the non-peeling area R2 on the captured image. The peeling area R1 is an object (resist or hardened in the resist) fixed on the upper surface of the substrate W The upper layer portion) has been peeled off, and the non-peeled area R2 is an area where the object fixed to the upper surface of the substrate W has not been peeled off. The nozzle movement control device 3D controls the movement motor of the nozzle movement unit 20 according to the detected position of the boundary B1. The respective processing described above will be described in detail later.

[Action description]

FIG. 5 is a flowchart for explaining an example of substrate processing by the processing unit 2. The substrate processing example shown in FIG. 5 is a resist removal processing for removing the resist from the upper surface (main surface) of the substrate W. The substrate processing shown in FIG. 5 is performed under the control of the control device 3 unless otherwise specified. The resist system belonging to the object to be removed in this example contains, for example, resin (polymer), photosensitizer, additives, and solvent as main components.

The resist removal treatment system includes a carry-in step S1, a rotation start step S2, a first SPM step S31, a second SPM step S32, a cleaning step S4, a drying step S5, a rotation stop step S6, and an unloading step S7. The respective steps are explained below.

In the carrying-in step S1, the substrate W to be processed is carried into the chamber 7. Here, the substrate W to be processed is a substrate coated with a resist applicable to the ion implantation process and is a substrate after the ion implantation process. The substrate W after the ion implantation step has a hardened upper layer portion and an unhardened lower layer portion in this order from the top. The hardened upper layer is relatively difficult to remove by SPM compared to the unhardened lower layer. In addition, the resist (upper layer portion and lower layer portion) belonging to the object is fixed to the entire upper surface of the substrate W. Furthermore, the substrate W carried into the chamber 7 is the substrate W that has not received the process for ashing the resist.

In the carrying-in step S1, the control device 3 causes the hand of the substrate transport robot CR (refer to FIG. 1) holding the substrate W to enter the chamber 7 in a state where the SPM nozzle 18 and the like are all retracted from above the rotation jig 8. In this way, the substrate W is transferred to and held by the rotation jig 8 with the surface (device formation surface) of the substrate W facing upward (substrate holding step).

After the carry-in step S1, the rotation start step S2 is performed. In the rotation start step S2, the control device 3 controls the rotation motor M to start the rotation of the substrate W. The rotation speed of the substrate W is increased to a predetermined liquid processing speed (in the range of 150 rpm to 1500 rpm, preferably in the range of 150 rpm to 300 rpm) and maintained at the liquid processing speed.

When the rotation speed of the substrate W reaches the liquid processing speed by the rotation start step S2, the first SPM step S31 and the second SPM step S32 (chemical solution supply step) are performed. Here, the first SPM step S31 is performed first, and then the second SPM step S32 is performed.

FIG. 6 is a perspective view for schematically showing the processing unit 2 in the first SPM step S31. In (a) to (d) in FIG. 6, the substrate W rotating around the rotation axis A1 and the SPM nozzle 18 moving above the substrate W are shown. In addition, (a) and (b) in FIG. 6 show the situation when the SPM nozzle 18 is located at the center position L1, and (c) in FIG. 6 shows that the SPM nozzle 18 is located in the middle between the center position L1 and the surrounding position L2. In the situation at the position L12, (d) in FIG. 6 shows the situation when the SPM nozzle 18 is at the peripheral position L2.

In the first SPM step S31, the control device 3 controls the nozzle moving unit 20 to move the SPM nozzle 18 from the retracted position to the center position L1 belonging to the processing position. As shown in Fig. 6(a), the center position L1 is the nozzle position when the SPM sprayed from the SPM nozzle 18 impinges on the upper surface of the substrate W (this position is also referred to as "arrangement" below). When the liquid position LP1") coincides with the center of rotation of the substrate W. The rotation center of the substrate W is a horizontal position, and the horizontal position is consistent with the rotation axis A1 belonging to the rotation center of the plurality of clamping members 17. When the SPM nozzle 18 moves to the center position L1, the control device 3 simultaneously opens the sulfuric acid valve 24 and the hydrogen peroxide water valve 36 to supply sulfuric acid and hydrogen peroxide water to the SPM nozzle 18. Sulfuric acid and hydrogen peroxide water are mixed in the inside of the SPM nozzle 18 to generate SPM at a high temperature (for example, 160°C to 220°C). The SPM is ejected from the ejection port 182 of the SPM nozzle 18 and reaches the center of the upper surface of the substrate W. Here, the concentration of SPM is kept constant throughout the entire period of the first SPM step S31. In addition, in the first SPM step S31, the control device 3 controls the sulfuric acid flow rate adjustment valve 25 and the hydrogen peroxide water flow rate adjustment valve 37, thereby reducing the SPM rich in hydrogen peroxide water (for example, the flow rate ratio is in H ₂ SO ₄ : H ₂ O ₂ =3:1 to 5:1 range) is supplied to the substrate W.

The SPM ejected from the SPM nozzle 18 reaches the upper surface of the substrate W and then flows outward along the upper surface of the substrate W by centrifugal force. Therefore, SPM is supplied to the entire upper surface of the substrate W, and a liquid film of SPM covering the entire upper surface of the substrate W is formed on the substrate W. Thereby, the resist chemically reacts with the SPM, and the resist on the substrate W is removed from the substrate W by the SPM. The SPM that has moved to the peripheral edge of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W.

As shown in (b) of FIG. 6, when SPM is supplied to the center portion of the surface of the substrate W in a state where the SPM nozzle 18 is fixed to the center position L1, a peeling region R1 is formed in the center portion of the substrate W. Since the substrate W rotates around the rotation axis A1, the peeling area R1 is substantially circular in plan view. In the first SPM step S31, the control device 3 controls the nozzle moving unit 20 to move the SPM nozzle 18 from the center position L1 to the peripheral position L2 via the intermediate position L12. As shown in (d) of FIG. 6, the peripheral edge position L2 is the nozzle position in the case where the impingement position LP1 coincides with the peripheral edge of the substrate W. The peripheral edge portion of the substrate W is a ring-shaped area slightly inward (for example, 2 mm to 3 mm inward) from the outer peripheral end of the substrate W. The nozzle moving unit 20 moves the SPM nozzle 18 to the first direction D1 belonging to the radially outer direction. Thereby, the filling position LP1 of the SPM also moves to the first direction D1. Peroxymonosulfuric acid system produced by mixing sulfuric acid and hydrogen peroxide water With the passage of time, the reactivity to the resist will decrease, and the reactivity will also decrease due to the decrease in temperature. Therefore, by moving the SPM relative to the placement position LP1 of the substrate W, the SPM with high activity can be sequentially supplied to the entire area of the substrate W.

In addition, in the first SPM step S31, when the SPM nozzle 18 is moved from the center position L1 to the peripheral position L2, the control device 3 causes the SPM nozzle 18 to move in response to the position of the boundary B1 between the peeling area R1 and the non-peeling area R2. The nozzle 18 moves. Specifically, the image processing unit 3B of the control device 3 processes the captured image obtained by the camera 153 to thereby detect the boundary B1. The image processing unit 3B is an example of the boundary detection unit. The nozzle movement control device 3D moves the SPM nozzle 18 in accordance with the position in the radial direction of the boundary B1 detected by the image processing unit 3B (hereinafter referred to as the "radial position"). Therefore, in the first SPM step S31, the moving speed of the SPM nozzle 18 during the movement from the center position L1 to the peripheral position L2 does not have to be fixed, and it depends on the radial position of the boundary B1 (that is, the peeling state of the resist). change.

FIG. 7 is a diagram for showing an example of the captured image PI1 obtained by the camera 153 in the first SPM process S31. As shown in FIG. 7, the nozzle movement control device 3D sets the determination area JA1 to a position overlapping with the upper surface of the substrate W that is projected onto the captured image PI1 as an image. Here, the determination area JA1 is set to the side of the second direction D2 on the upper surface of the substrate W sandwiching the rotation axis A1 and opposite to the first direction D1, and is set to extend parallel to the first direction D1 Rectangular shape. The second direction D2 is parallel to the first direction D1 and opposite to the first direction D1. Here, although the determination area JA1 is set to include the rotation axis A1, this method is not necessary.

As shown in FIG. 7, when the SPM reacts with the resist in the non-peeled region R2, a peeled region R1 is formed inside the non-peeled region R2. The image processing unit 3B detects the boundary B1 between the peeling area R1 and the non-peeling area R2 in the determination area JA1. The detection system of the boundary B1 only needs to apply a known image processing to the image portion of the judgment area JA1 in the captured image PI1. As this kind of image processing, for example, it is also possible to use contrast adjustment, binarization processing, or using a method such that the difference between the brightness value corresponding to the peeling area R1 and the brightness value corresponding to the non-peeling area R2 becomes larger. To extract the peeling zone Processing of the edge between the region R1 and the unstripped region R2 (edge detection using Kenny filter or Sobel filter).

As shown in FIG. 7, in the determination area JA1 of the captured image PI1, the boundary B1 is presented as a pixel group, and the pixel group is arranged in a curved line shape that protrudes outward in the radial direction. Therefore, the radial position of the pixel closest to the radially outer direction and the radial position of the pixel closest to the radial inner direction in the curved linear pixel group may be the radial position of the boundary B1. Alternatively, the radial position of a plurality of pixels may be averaged to derive the radial position of the boundary B1 from the plurality of pixels.

The nozzle movement control device 3D may also appropriately derive the movement speed of the boundary B1 at every predetermined time interval, and move the SPM nozzle 18 according to the movement speed. For example, the movement speed of the SPM nozzle 18 may be made to coincide with the movement speed of the derived boundary B1. In this case, the SPM nozzle 18 can be moved so that the landing position LP1 follows the boundary B1.

In addition, there may be from the initial state of the non-peeling area R1 on the upper surface of the substrate W as shown in (a) in FIG. 6 until it becomes a predetermined size formed on the upper surface of the substrate W as in (b) in FIG. It is difficult to accurately obtain the moving speed of the boundary B1 in the state of the peeling region R1. In this case, for example, it may be configured to calculate the moving speed of the boundary B1 after the radial position of the boundary B1 becomes a predetermined position. Thereby, since the movement of the SPM nozzle 18 is restarted after the peeling area R1 becomes a predetermined size, the generation of residues can be suppressed and the peeling area R1 can be expanded satisfactorily.

In addition, the nozzle movement control device 3D may also derive the position for arranging the SPM nozzle 18 from the detected radial position of the boundary B1. For example, the nozzle movement control device 3D can also derive the nozzle position at every predetermined time interval and move the SPM nozzle 18 to the nozzle position. The nozzle position means that the liquid position LP1 has moved away from the boundary B1 in the second direction D2 by up to To the position of the predetermined distance d. In this case, the nozzle movement control device 3D can also move the SPM nozzle 18 in such a way that the impingement position LP1 follows the boundary B1.

In addition, in this example, the ejection port 182 of the SPM nozzle 18 faces the second direction D2, which is opposite to the first direction D1 belonging to the movement direction (scanning direction) of the SPM nozzle 18. Therefore, SPM is ejected from the SPM nozzle 18 in the second direction D2. Thereby, since the SPM can be supplied toward the inner side in the radial direction, the residence time of the SPM on the upper surface of the substrate W can be prolonged compared with the case where the SPM is supplied toward the outer side in the radial direction. Therefore, the resist can be peeled off well. In addition, the ejection outlet 182 does not necessarily need to face the second direction D2, and may face the first direction D1.

There may be cases where smoke is generated when the resist on the surface of the substrate W (including the hardened upper layer portion) reacts with the SPM. The so-called smog is a gas or mist derived from the reaction of SPM and the inhibitor. In the present embodiment, the exhaust duct 13 is formed around the substrate W (a region closer to the radially outer side than the substrate W) to generate suction in the radially outer direction, thereby causing the smoke generated above the substrate W to move toward Move radially outward. Therefore, it is suppressed that the detection of the boundary B1 in the determination area JA1 is prevented by the smoke.

In the processing unit 2, the area around the substrate W includes a first area SA1 and a second area SA2 (refer to FIG. 7). The second area SA2 is an area that sandwiches the rotation axis A1 and is on the opposite side to the first area SA1. Since the first area SA1 is an area closer to the exhaust duct 13 than the second area SA2, the above-described attraction system in the first area SA1 is larger than the second area SA2. In this example, in the first SPM step S31, the SPM nozzle 18 moves so as to approach the first area SA1. Moreover, the determination area JA1 is set in an area on the surface of the substrate W that is closer to the second area SA2 than the first area SA1. The smoke system that has been generated on the upper surface of the substrate W is easier to move in the direction of the first area SA1 where the attractive force is stronger than that of the second area SA2. Therefore, even if smoke is generated due to the reaction between the resist and SPM, the smoke is reduced in the determination area JA1 close to the second area SA2. Therefore, it is possible to prevent the detection of the boundary B1 in the determination area JA1 from becoming difficult due to smoke.

When the SPM nozzle 18 moves to the peripheral position L2, the control device 3 closes the sulfuric acid valve 24 and the hydrogen peroxide water valve 36, thereby stopping the spraying of SPM from the SPM nozzle 18. Thereby, the first SPM step S31 is ended. Next, the second SPM step S32 is performed.

In the second SPM step S32, the control device 3 moves the SPM nozzle 18 to the center position L1. When the SPM nozzle 18 is arranged at the center position L1, the control device 3 simultaneously opens the sulfuric acid valve 24 and the hydrogen peroxide water valve 36 to supply sulfuric acid and hydrogen peroxide water to the SPM nozzle 18. In addition, in the second SPM step S32, the control device 3 controls the sulfuric acid flow rate adjustment valve 25 and the hydrogen peroxide water flow rate adjustment valve 37, thereby reducing the sulfuric acid-rich SPM (for example, a flow ratio of H ₂ SO ₄ :H ₂ O ₂ =20:1) Supply to the substrate W.

In the second SPM step S32, the control device 3 moves the SPM nozzle 18 from the center position L1 to the peripheral position L2. Thereby, SPM rich in sulfuric acid is supplied to the central part of the surface of the substrate W to the peripheral part. After that, the control device 3 controls the nozzle moving unit 20 (refer to FIG. 2) to return the SPM nozzle 18 to the retracted position.

In this processing example, the substrate W is processed with SPM rich in hydrogen peroxide water in the previous first SPM step S31. Therefore, in the first SPM step S31, the upper layer portion of the substrate W where the resist has been cured is substantially removed. Therefore, even if the resist remains on the substrate W after the first SPM step S31, the resist can be peeled off relatively easily. Therefore, in the second SPM step S32, processing is performed with sulfuric acid-rich SPM, whereby the remaining resist can be removed favorably.

After the second SPM step S32, the control device 3 performs a cleaning step S4. In the cleaning step S4, the cleaning liquid is supplied to the substrate W. Specifically, the control device 3 opens the cleaning liquid valve 49 and sprays the cleaning liquid from the cleaning liquid nozzle 47 toward the center of the upper surface of the substrate W. The cleaning liquid ejected from the cleaning liquid nozzle 47 is attached to the center of the upper surface of the substrate W covered by the SPM. The cleaning liquid deposited on the center of the upper surface of the substrate W receives the centrifugal force caused by the rotation of the substrate W, and flows on the upper surface of the substrate W toward the peripheral edge of the substrate W. Thereby, the SPM system on the substrate W is flushed outward by the cleaning liquid and discharged to the periphery of the substrate W. Thereby, the SPM and the resist (that is, resist residue) remaining in the entire upper surface of the substrate W are washed. The resist residue system is, for example, carbide. When a predetermined period has elapsed since the start of the cleaning step S4, the control device 3 closes the cleaning liquid valve 49 to stop the cleaning liquid nozzle 47 from spraying the cleaning liquid.

After the cleaning step S4, a drying step S5 for drying the substrate W is performed. In the drying step S5, the control device 3 controls the rotation motor M, thereby accelerating the substrate W to a drying rotation that is higher than the rotation speed of the substrate W in the first SPM step S31, the second SPM step S32, and the cleaning step S4 Speed (for example, thousands of rpm), and rotate the substrate W at a dry rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid system attached to the substrate W is thrown away to the periphery of the substrate W. In this way, the liquid is removed from the substrate W and the substrate W is dried.

After a predetermined time has elapsed from the start of high-speed rotation of the substrate W in the drying step S5, the rotation stopping step S6 is performed. In the rotation stop step S6, the control device 3 controls the rotation motor M to thereby stop the rotation jig 8 from rotating the substrate W. After the rotation step S6 is stopped, the unloading step S7 is performed. In the unloading step S7, the control device 3 causes the hand of the substrate transfer robot CR to enter the chamber 7 and causes the hand of the substrate transfer robot CR to hold the substrate W on the rotation jig 8. After that, the control device 3 retracts the hand of the substrate transfer robot CR from the chamber 7. Thereby, the substrate W from which the resist has been removed from the upper surface (device formation surface) is carried out from the chamber 7.

FIG. 8 is a schematic side view for explaining the operations of the first protective cover 43 and the second protective cover 44 in each process. (A) in FIG. 8 is a schematic diagram for explaining the first SPM process S31, (b) in FIG. 8 is a schematic diagram for explaining the second SPM process S32, and (c) in FIG. 8 ) Is a schematic diagram for explaining the drying step S5.

As described above, since the resist can be removed in the first SPM step S31, the SPM supplied to the substrate W in the second SPM step S32 may hardly contribute to the removal of the resist. Regarding this type of SPM, from the viewpoint of environmental considerations and cost, there may be situations where it is desired not to discard but to recycle. Therefore, here, SPM is sought to be recovered in the second SPM step S32.

As shown in FIG. 8(a), in the first SPM step S31, the control device 3 controls the processing cover 11 to be set to the first protection cover facing state. As shown in FIG. 8(b), in the second SPM step S32, the control device 3 controls the processing cover 11 to be set to the second protection cover facing state.

In the first SPM step S31, since most of the resist is peeled off on the upper surface of the substrate W, the SPM system scattered (discharged) from the substrate W during this period contains a large amount of resist. Since SPM containing a large amount of resist is not suitable for reuse, it is better not to be recycled but to be discarded. Therefore, in the first SPM step S31, after the SPM nozzle 18 is arranged at the processing position, the control device 3 controls the shield raising and lowering unit 46 to raise the first shield 43 to the third shield 45 to the upper position. Thereby, as shown in (a) of FIG. 8, the first protective cover 43 is made to face the peripheral end of the substrate W. As a result, the first protective cover is in a facing state.

In the first protective cover state, the SPM scattered from the peripheral edge of the substrate W is attached to the inner wall 43a of the first protective cover 43 (the inner wall 43a of the middle section 65). The SPM captured by the inner wall 43 a flows down along the inner wall 43 a of the first protective cover 43, is caught by the first cover 41, and is transported to the first discharge pipe 52. The SPM sent to the first drain piping 52 is sent to a waste treatment facility outside the machine.

As described above, in the first SPM step S31, the SPM system that is scattered (ejected) from the substrate W contains a large amount of resist. Therefore, the SPM containing the resist discharged from the substrate W is discharged through the first circulation space 101. That is, it will not be recycled and reused.

When the second SPM process S32 is started, the control device 3 controls the shield raising and lowering unit 46 to lower the first shield 43 from the upper position to the lower position. As a result, as shown in (b) of FIG. 8, the processing cover 11 is set to the second protective cover facing state. In the second SPM step S32, the SPM scattered from the peripheral edge of the substrate W is captured by the inner wall 44a of the second shield 44. In addition, the SPM flowing down the inner wall 44 a of the second protective cover 44 is sent to the recovery tank 29 of the sulfuric acid supply unit 26 through the second cover 42, the common pipe 55, and the recovery pipe 56. That is, the SPM scattered from the peripheral edge of the substrate W is collected through the second circulation space 102 and is reused.

After the second SPM step S32, when the cleaning step S4 is started, the control device 3 raises the first protective cover 43 to the upper position, thereby setting the processing cover 11 to the first protective cover facing state (refer to Fig. 8 (a)). Next, when the drying step S5 is started, the control device 3 lowers the first protective cover 43 and the second protective cover 44 to the lower position. As a result, as shown in (c) in Figure 8, the processing cover 11 is set to a third The shield is facing the state. Furthermore, when the unloading step S7 is started, the control device 3 lowers the third protective cover 45 to the lower position. Thereby, the first protective cover 43 to the third protective cover 45 are all arranged in the lower position. Thereby, the substrate transfer robot CR can carry out the substrate W from the chamber 7 without interfering with the first protective cover 43 to the third protective cover 45.

As described above, in the second SPM step S32, the processing cover 11 is moved from the first protection cover facing state to the second protection cover facing state, whereby the flow destination of the SPM discharged from the substrate W is from the first protection cover. The drain pipe 52 is switched to the recovery pipe 56. Thereby, the flow destination of the SPM discharged from the substrate W can be switched from liquid discharge to recovery.

[2. Examples of changes]

Although the embodiment has been described above, the present invention is not limited to the above embodiment, and various changes are possible.

In the above embodiment, in the first SPM step S31, although the nozzle movement control device 3D moves the SPM nozzle 18 from the center position L1 to the peripheral position L2 in the radially outer direction (the direction away from the rotation axis A1), This is not necessary. For example, the nozzle movement control device 3D may move the SPM nozzle 18 from the peripheral position L2 to the center position L1 in the radially inward direction (the direction approaching the rotation axis A1). In this case, the nozzle movement control device 3D also moves the SPM nozzle 18 according to the position of the boundary B1, so that the resist can be peeled off according to the peeling condition. Thereby, the generation of resist residue on the upper surface of the substrate W can be reduced. In addition, in the second SPM step S32, the SPM nozzle 18 can also be moved so as to approach the rotation axis A1.

In the above-mentioned embodiment, in the substrate processing apparatus 1, although the second SPM step S32 is performed after the first SPM step S31, the operation of performing the second SPM step is not essential. For example, after the first SPM step 31, the second SPM step S32 may be skipped and the cleaning step S4 may be performed.

In the above-mentioned embodiment, although it has been described that the substrate with the resist which is the object to be removed is fixed to the entire upper surface of the substrate W, it is not limited to the substrate W with the resist fixed to the entire upper surface. For example, in the processing unit 2, it is also possible to fix only a part of the area on the upper surface of the substrate W. Remove the resist from the object. In such a substrate W, the SPM nozzle 18 is moved in accordance with the position of the boundary B1, so that the resist belonging to the object can be removed well. In addition, in this case, it is also possible to limit the movement range of the SPM nozzle 18 by supplying SPM to the area where the resist is fixed.

The substrate to be processed in the substrate processing apparatus 1 is not limited to the substrate W after the ion implantation process, and may be, for example, a substrate after general exposure processing.

In addition, the action of removing the resist on the entire upper surface of the substrate W is not essential. For example, only a part of the entire upper surface of the substrate W may be set as the removal target area. In this case, it is only necessary for the control device 3 to move the SPM nozzle 18 so that the SPM reaches the range of the removal target area.

Although the present invention has been described in detail, the above description is only an example in all embodiments, and the present invention is not limited to the above description. It can be understood that countless variations that are not illustrated are not beyond the scope of the present invention. The respective configurations described in the above-mentioned respective embodiments and respective modification examples can be appropriately combined or omitted as long as they do not contradict each other.

18: SPM nozzle

A1: Rotation axis

B1: junction

d: predetermined distance

D1: First direction

D2: second direction

JA1: Judgment area

LP1: Implantation position

PI1: Take an image

R1: Stripping area

R2: Unstripped area

SA1: The first area

SA2: second area

W: substrate

Claims (13)

A substrate processing device is used to peel off an object fixed on the surface of a substrate by a chemical liquid, and is provided with: a substrate holder to hold the substrate in a horizontal position; a rotating motor to be held by the substrate holder The substrate rotates around a rotation axis passing through the center of the substrate in a vertical direction; the nozzle has an ejection port for spraying the chemical liquid; the moving motor moves the nozzle in a first direction orthogonal to the rotation axis; The camera includes the surface of the substrate in the photographing target area; the boundary detection section detects the peeling area and the fixed object on the surface of the substrate in the photographed image obtained by the camera. The boundary between the unpeeled regions of the object; and the control unit, which is connected to the moving motor, and moves the nozzle in the first direction according to the position of the boundary detected by the boundary detection unit; The control unit derives the moving speed in the radial direction along the first direction of the boundary at every predetermined time interval, and determines the moving speed of the nozzle based on the derived moving speed of the boundary The nozzle is moved in such a manner that the sulfuric acid and hydrogen peroxide water mixture of the nozzle reaches the peeling area on the side opposite to the first direction with respect to the boundary. The substrate processing apparatus according to claim 1, wherein the moving speed of the nozzle is consistent with the moving speed of the boundary. The substrate processing apparatus according to claim 1 or 2, wherein the ejection port of the nozzle faces a second direction opposite to the first direction. The substrate processing apparatus according to claim 1 or 2, wherein the first direction is a direction away from the rotation axis. The substrate processing apparatus according to claim 4, wherein the control unit moves the impingement position of the chemical liquid from the nozzle to the substrate from the position of the rotation axis in the first direction. The substrate processing apparatus according to claim 5, wherein the boundary detection unit performs image processing on an image portion of the captured image that is a determination area on the second direction side opposite to the first direction with respect to the rotation axis. The substrate processing apparatus according to claim 1 or 2, which is further provided with: a processing chamber for accommodating the substrate holder and the nozzle; and an exhaust part for exhausting the atmosphere of the processing chamber to External exhaust duct; the area around the substrate held by the substrate holder includes a first area and a second area, and the second area sandwiches the rotation axis and is on the opposite side of the first area Area, the first area is closer to the exhaust duct than the second area; the boundary detection unit performs image processing on the image part of the captured image that is closer to the judgment area of the second area than the first area Detect the aforementioned junction. The substrate processing apparatus according to claim 7, wherein the exhaust portion generates a suction force on the outer side in the radial direction of the substrate. The substrate processing apparatus according to claim 1 or 2, further comprising: a first pipe connected to the nozzle and allowing the first fluid to flow; and a second pipe connected to the nozzle and allowing the second Fluid flows; the nozzle system mixes the first fluid with the second fluid and ejects from the ejection port. The substrate processing apparatus according to claim 9, which includes a flow rate changing unit that changes the flow rate of the first fluid from the first pipe and the flow rate of the second fluid from the second pipe. The substrate processing apparatus according to claim 9, wherein the first flow system contains sulfuric acid; the second flow system contains hydrogen peroxide water. The substrate processing apparatus according to claim 1 or 2, which is further provided with: a discharge pipe provided below the substrate held by the substrate holder; and a recovery pipe provided below the substrate held by the substrate holder. The held substrate is still below; and a switching part is a piping that switches between the discharge piping and the recovery piping to allow the liquid chemical to flow in. A substrate processing method for peeling off an object fixed on the surface of a substrate by a chemical solution, and includes: step (a), maintaining the substrate in a horizontal position; step (b), in the aforementioned step (a) After that, the substrate is rotated around the axis of rotation in the vertical direction; and the step (c) is after the step (b), the chemical solution is supplied to the surface of the substrate; the step (c) includes : Step (c-1) is to detect the boundary between the peeled area where the object has been peeled off on the surface of the substrate and the non-peeled area where the object is fixed; and Step (c-2) is In response to the position of the boundary detected in the step (c-1), the position where the chemical liquid reaches the surface of the substrate is moved in a first direction orthogonal to the axis of rotation; The aforementioned step (c-2) is to derive the movement speed in the radial direction along the first direction of the aforementioned boundary at every predetermined time interval, and determine the movement of the nozzle according to the derived movement velocity of the aforementioned boundary Speed, and move the nozzle so that the sulfuric acid hydrogen peroxide water mixture from the nozzle impinges into the peeling area on the side opposite to the first direction with respect to the boundary.

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