CN103426722A - Processing method for substrate - Google Patents
Processing method for substrate Download PDFInfo
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- CN103426722A CN103426722A CN2012101627891A CN201210162789A CN103426722A CN 103426722 A CN103426722 A CN 103426722A CN 2012101627891 A CN2012101627891 A CN 2012101627891A CN 201210162789 A CN201210162789 A CN 201210162789A CN 103426722 A CN103426722 A CN 103426722A
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- substrate
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- water smoke
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Abstract
The invention discloses a processing method for a substrate. The processing method includes the steps of providing the substrate, carrying out the device forming process on the substrate and cleaning the substrate. The process of cleaning the substrate includes the steps of cleaning the substrate with double-fluid atomic spray and rinsing the substrate with deionized water.
Description
Technical field
The present invention relates to a kind of processing method of substrate, and particularly relate to a kind of substrate surface of avoiding and be subject to the processing method of substrate that electric charge is blown the destruction of phenomenon.
Background technology
Structure due to semiconductor element constantly changes in recent years, and the manufacturing process steps of semiconductor element, in response to increase, easily makes the manufacture craft yield of semiconductor element reduce.Particularly, when substrate or element surface have defect (defect), easily cause the yield of follow-up manufacture craft to descend.
Therefore, designers are devoted to reduce the defect of semiconductor substrate or semiconductor component surfaces invariably in semiconductor fabrication process, to promote the qualification rate of semiconductor fabrication process.
Summary of the invention
The object of the present invention is to provide a kind of processing method of substrate, after wherein using two fluid water smoke cleaning base plates, then use deionized water drip washing substrate, the electric charge that can effectively remove substrate surface is blown phenomenon to avoid causing electric charge.
For reaching above-mentioned purpose, according to an aspect of the present invention, a kind of processing method of substrate is proposed.Processing method comprises provides a substrate, substrate is carried out to an element forms step and cleaning base plate.The step of cleaning base plate comprises to be used one or two fluid water smoke cleaning base plates and use a deionized water drip washing substrate after using two fluid water smoke cleaning base plates.
A kind of processing method of substrate is proposed according to a further aspect in the invention.Processing method comprises provides a substrate, substrate is carried out to an element forms step, uses one or two fluid water smoke cleaning base plates and use a chemical solution cleans substrate after using two fluid water smoke cleaning base plates.
A kind of processing method of substrate is proposed in accordance with a further aspect of the present invention.Processing method comprises provides a substrate, use one or two fluid water smoke cleaning base plates and use a deionized water drip washing substrate after using two fluid water smoke cleaning base plates.
For there is to better understanding above-mentioned and other aspect of the present invention, special embodiment below, and coordinate appended accompanying drawing, be described in detail below:
The accompanying drawing explanation
The processing method schematic diagram of the substrate that Figure 1A ~ Fig. 1 C is one embodiment of the invention;
The electric charge that Fig. 2 is one embodiment of the invention is from the schematic diagram of substrate diversion.
The main element symbol description
100: substrate
100a: surface
200: two fluid hydraulic spray nozzles
300: rotating disk
400: liquid discharge device
AS: two fluid water smokes
E: electric charge
H1, H2: highly
R1: electric charge moving direction
R2: electric charge diversion direction
W1, W2: water layer
Embodiment
In the embodiment of the present invention, after using two fluid water smoke cleaning base plates, then use deionized water drip washing substrate, the electric charge that can effectively remove substrate surface is blown phenomenon to avoid causing electric charge.Below to describe embodiments of the invention in detail with reference to appended accompanying drawing.Label identical in accompanying drawing is in order to indicate same or similar part.Should be noted, accompanying drawing has been simplified in order to the content that clearly demonstrates embodiment, and the dimension scale on accompanying drawing is not drawn according to the actual product equal proportion, is not therefore the use as limit protection range of the present invention.
Please refer to Figure 1A ~ Fig. 1 C.Figure 1A ~ Fig. 1 C illustrates the processing method schematic diagram of the substrate of one embodiment of the invention.
Please refer to Figure 1A, substrate 100 is provided.
In embodiment, optionally substrate 100 is carried out to element and form step (device forming process).In embodiment, element form step be for example implanted ions (ion implantation) manufacture craft, etching process, formation material layer, photoetching (lithography) manufacture craft and peel off (stripping) manufacture craft at least one of them.In embodiment, the implanted ions manufacture craft for example: painting photoresist layer (not illustrating) is on substrate, and implanting ions (not illustrating), on substrate surface, and removes the photoresist layer.Etching process is for example the plasma etching manufacture craft, and peeling off manufacture craft is for example to peel off photoresist with oxygen plasma.
Please refer to Figure 1B, use two fluid water smoke AS (atomic spray) cleaning base plates 100.In one embodiment, be for example to provide two fluid water smoke AS with cleaning base plate 100 with two fluid hydraulic spray nozzles 200.
In one embodiment, two fluid water smoke AS comprise water and nitrogen.In embodiment, two fluid water smoke AS for example are comprised of water and nitrogen.During with two fluid water smoke AS cleaning base plates 100, the flow that glassware for drinking water has is for example 15-300 cc/min (sccm), and the flow that nitrogen has is for example to be greater than 0 to 100 liter/minute (lpm).
The front manufacturing process steps of generally speaking, substrate 100 being carried out may cause charge accumulation on the surperficial 100a of substrate 100.May cause the manufacture craft of charge accumulation is for example implanted ions manufacture craft, plasma etching and plasma auxiliary chemical vapor deposition etc., but is not limited to this.The use electric current is arranged in the implanted ions manufacture craft, the use plasma is arranged in the plasma etching manufacture craft, plasma auxiliary chemical vapor deposition also has the use plasma, and the above charge accumulation that all may cause is on the surperficial 100a of substrate 100.In embodiment, two fluid water smoke AS have much tiny water smoke and drip, during with two fluid water smoke AS cleaning base plates 100, a plurality of tiny water smoke drips the surperficial 100a of contact substrate 100 simultaneously, and, simultaneously at the electric charge of the surperficial 100a of a plurality of contact point diversion substrates 100, make the electric charges that the surperficial 100a of substrate 100 can not be subject to producing in the single-point position in a large number destroy.In other words, during with two fluid water smoke AS cleaning base plates 100, can not occur when with single current, rinsing substrate 100, single-point position that current contact with current on the surperficial 100a of substrate 100 is caused and is produced a large amount of electric charges, and the electric charge occurred is blown the destruction on substrate 100 surfaces that (volcano) phenomenon causes.For instance, for example on the surperficial 100a of substrate 100, there is patterned line, during with two fluid water smoke AS cleaning base plates 100, a plurality of tiny water smoke drips the electric charge of meeting while at the surperficial 100a of a plurality of contact point diversion substrates 100, and avoid electric charge to blow phenomenon, makes the metal wire fusing and the situation of destruction metal line pattern.In embodiment, during with two fluid water smoke AS cleaning base plates 100, form water layer W1 on the surperficial 100a of substrate 100, water layer W1 has height H 1.
In addition, use two fluid water smoke AS cleaning base plates 100 can improve the overall humidity in reative cell, be conducive to the electric charge of the surperficial 100a of diversion substrate 100, avoid the surperficial 100a of substrate 100 to be subject to electric charge to blow phenomenon and destroy.
In embodiment, use the mode of two fluid water smoke AS cleaning base plates 100 can have a variety of.For example, can fix the position of two fluid hydraulic spray nozzles 200 with respect to the surperficial 110a of substrate 100, two fluid water smoke AS are sprayed in the fixed position on the surperficial 110a of substrate 100, are for example centre or the edge of the surperficial 110a of substrate 100.Moreover, after also the centre of the surperficial 110a of two fluid hydraulic spray nozzle 200 align substrates 100 can being started to spray two fluid water smoke AS, then by two fluid hydraulic spray nozzles 200, the radius along substrate 100 is moved and sprays two fluid water smoke AS toward the periphery of the surperficial 110a of substrate 100 by central authorities, more than this process can repeat once.In embodiment, with two fluid water smoke AS cleaning base plates 100 time, can move separately two fluid hydraulic spray nozzles 200, independent moving substrate 100 or move both to change both relative positions simultaneously.In addition, also can adopt a plurality of two fluid hydraulic spray nozzles on a plurality of positions of the surperficial 110a of substrate 100, to provide two fluid water smoke AS with cleaning base plate 100 simultaneously simultaneously.
In embodiment, as shown in Figure 1A, after the step that substrate 100 is provided, before the step of using two fluid water smoke AS cleaning base plates 100, substrate 100 optionally is set on rotating disk 300, and rotating disk 300 is rotated with rotating speed 30-200 per minute (rpm).In one embodiment, be for example that about 1-3 rotates rotating disk 300 second before using two fluid water smoke AS cleaning base plates 100.In one embodiment, when rotating disk 300 rotates, use the step of two fluid water smoke AS cleaning base plates 100 to carry out together simultaneously.
Please refer to Fig. 1 C, use deionized water drip washing (rinse) substrate 100.In one embodiment, be for example to provide deionized water with drip washing substrate 100 with liquid discharge device 400.Deionized water is for example the mode drip washing substrate 100 with single current.In one embodiment, the step that rotating disk 300 is rotated is carried out together with the while with the step of using deionized water drip washing substrate 100.
In embodiment, during with deionized water drip washing substrate 100, the flow that deionized water has is for example 500 ~ 2000 cc/min (sccm), or about 1500 cc/min (sccm).In embodiment, during with deionized water drip washing substrate 100, form water layer W2 on the surperficial 100a of substrate 100, water layer W2 has height H 2.The height H 2 of water layer W2 is for example the height H 1 that is greater than water layer W1.
In embodiment, use the step of deionized water drip washing substrate 100 can be after the step of using two fluid water smoke AS cleaning base plates 100 a period of time just start to carry out, or carry out with the step of using two fluid water smoke AS cleaning base plates 100 simultaneously.
In one embodiment, use after the step of two fluid water smoke AS cleaning base plates 100 approximately 10 microseconds to 1 minute, can start with deionized water drip washing substrate 100.In embodiment, with deionized water drip washing substrate 100 time, more can continue with two fluid water smoke AS cleaning base plates 100 simultaneously.That is to say, first use two fluid water smoke AS to start cleaning base plate 100, approximately, after 10 microseconds to 1 minute, then start with deionized water drip washing substrate 100, and still continue to use two fluid water smoke AS cleaning base plates 100.In other words, use after the step of two fluid water smoke AS cleaning base plates 100 approximately 10 microseconds (μ s) after 1 minute, to use the step of deionized water drip washing substrate 100 and the step of using two fluid water smoke AS cleaning base plates 100 to carry out simultaneously.
Please refer to Fig. 1 C, after using two fluid water smoke AS cleaning base plates 100, then use chemical solution cleans substrate 100.In one embodiment, be for example to provide chemical solution drip washing substrate 100 with liquid discharge device 400.That is to say, liquid discharge device 400 can provide respectively deionized water and chemical solution in different step.In another embodiment, be for example to provide chemical solution drip washing substrate 100 (not illustrating) with chemical solution discharging device independently.That is to say, provide deionized water and chemical solution with liquid discharge device 300 and chemical solution discharging device respectively.Chemical solution is for example the mode drip washing substrate 100 with single current.
In one embodiment, the step of using chemical solution cleans substrate 100 is for example to start to carry out after the step of using two fluid water smoke AS cleaning base plates 100.In another embodiment, the step of using chemical solution cleans substrate 100 is for example to start to carry out after the step of using deionized water drip washing substrate 100.In embodiment, the step that rotating disk 300 is rotated is carried out together with the while with the step of using chemical solution drip washing substrate 100.
In one embodiment, use after the step of two fluid water smoke AS cleaning base plates 100 approximately 10 microseconds to 1 minute, can start with chemical solution drip washing substrate 100.In embodiment, with chemical solution drip washing substrate 100 time, more can continue with two fluid water smoke AS cleaning base plates 100 simultaneously.That is to say, first use two fluid water smoke AS to start cleaning base plate 100, approximately, after 10 microseconds to 1 minute, then start with chemical solution drip washing substrate 100, and still continue to use two fluid water smoke AS cleaning base plates 100.In other words, use after the step of two fluid water smoke AS cleaning base plates 100 approximately 10 microseconds (μ s) after 1 minute, to use the step of chemical solution drip washing substrate 100 and the step of using two fluid water smoke AS cleaning base plates 100 to carry out simultaneously.
Please refer to Fig. 2.Fig. 2 illustrates the schematic diagram of the electric charge of one embodiment of the invention from the substrate diversion.While using two fluid water smoke AS cleaning base plates 100, a plurality of tiny water smoke drips and can above form a plurality of contact points, the electric charge e of the surperficial 100a of diversion substrate 100 with the surperficial 100a of substrate 100.As shown in Figure 2, a plurality of electric charge e go to water smoke to drip with the upper a plurality of contact points that form of the surperficial 100a of substrate 100 by diversion along the direction of arrow R1.Continue to use two fluid water smoke AS cleaning base plates 100, and then use deionized water drip washing substrate 100, can on the surperficial 100a of substrate 100, form the water layer W2 with height H 2, this height H 2 is enough to make two fluid water smoke AS diversions effectively to be removed by deionized water to the electric charge e of the surperficial 100a of substrate 100.As shown in Figure 2, a plurality of electric charge e be for example direction along arrow R2 in water layer W2 by diversion.Thus, just can reach and effectively remove electric charge e and do not cause electric charge and blow phenomenon, and avoid the surperficial 100a of substrate 100 to be subject to the destruction that electric charge is blown phenomenon.Continue in the above described manner to use two fluid water smoke AS cleaning base plates 100, and then use chemical solution drip washing substrate 100, also can reach and avoid the surperficial 100a of substrate 100 to be subject to the effect that electric charge is blown the destruction of phenomenon.
Above embodiment is to make related description with the processing method of substrate.In sum, propose to use two fluid water smoke AS cleaning base plates in embodiment, make the electric charges that the surface of substrate can not be subject to producing in the single-point position in a large number destroy.And, after using two fluid water smoke cleaning base plates, then use deionized water drip washing substrate, and carry out with using two fluid water cleaning base plates simultaneously, can reach and effectively remove the substrate surface electric charge and do not cause the effect that electric charge is blown phenomenon.
In sum, though disclosed the present invention in conjunction with above embodiment, it is not in order to limit the present invention.Be familiar with in the technical field of the invention this operator, without departing from the spirit and scope of the present invention, can be used for a variety of modifications and variations.Therefore, protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (33)
1. the processing method of a substrate comprises:
One substrate is provided;
This substrate is carried out to an element and form step (device forming process); And
Clean this substrate, comprising:
Use one or two fluid water smokes (atomic spray) to clean this substrate; And
After using this two fluids water smoke to clean this substrate, use this substrate of deionized water drip washing (rinse).
2. processing method as claimed in claim 1, wherein this two fluids water smoke comprises water and nitrogen.
3. processing method as claimed in claim 2, while wherein with this two fluids water smoke, cleaning this substrate, it is 15-300 cc/min (sccm) that glassware for drinking water has a flow, nitrogen has a flow for being greater than 0 to 100 liter/minute (lpm).
4. processing method as claimed in claim 1, wherein be about this this substrates of deionized water drip washing of 1500 cc/min to have a flow.
5. processing method as claimed in claim 1, the step of wherein using this this substrate of deionized water drip washing use this two fluids water smoke clean the step of this substrate after approximately 10 microseconds (μ s) to 1 minute, start to carry out.
6. processing method as claimed in claim 1, wherein used this two fluids water smoke to clean after the step of this substrate approximately 10 microseconds (μ s) and, to 1 minute, start with this this substrate of deionized water drip washing.
7. processing method as claimed in claim 6 wherein, with this this substrate of deionized water drip washing the time, continues to clean this substrate with this two fluids water smoke simultaneously.
8. processing method as claimed in claim 1, wherein used this this substrate of deionized water drip washing to carry out together with the while with the step of using this two fluids water smoke to clean this substrate.
9. processing method as claimed in claim 1 also comprises before cleaning this substrate:
This substrate is set on a rotating disk; And
This rotating disk is rotated with rotating speed 30-200 per minute (rpm).
10. processing method as claimed in claim 9, wherein use this two fluids water smoke clean this substrate before about 1-3 rotate this rotating disk second.
11. processing method as claimed in claim 9, wherein during this dial rotation, clean the step of this substrate and carry out together simultaneously.
12. processing method as claimed in claim 1, wherein element form that step comprises an implanted ions (ion implantation) manufacture craft, an etching process, forms a material layer, a photoetching (lithography) manufacture craft and is peeled off (stripping) manufacture craft at least one of them.
13. processing method as claimed in claim 12, wherein this implanted ions manufacture craft comprises:
Be coated with a photoresist layer on this substrate;
Implanting ions is in this substrate; And
Remove this photoresist layer.
14. processing method as claimed in claim 1, wherein carry out this element formation step to this substrate and carried out before cleaning this substrate.
15. processing method as claimed in claim 1, wherein carry out this element formation step to this substrate and carry out after cleaning this substrate.
16. processing method as claimed in claim 1, wherein, after this two fluids water smoke of use cleans the step of this substrate, the step of cleaning this substrate also comprises:
Use this substrate of a chemical solution cleans.
17. the processing method of a substrate comprises:
One substrate is provided;
This substrate is carried out to an element and form step (device forming process);
Use one or two fluid water smokes (atomic spray) to clean this substrate; And
After using this two fluids water smoke to clean this substrate, use this substrate of a chemical solution cleans.
18. processing method as claimed in claim 17, wherein this two fluids water smoke comprises water and nitrogen.
19. processing method as claimed in claim 18, while wherein with this two fluids water smoke, cleaning this substrate, it is 15-300 cc/min (sccm) that glassware for drinking water has a flow, and nitrogen has a flow for being greater than 0 to 100 liter/minute (lpm).
20. processing method as claimed in claim 17, wherein used the step of this this substrate of chemical solution cleans after this two fluids water smoke of use cleans the step of this substrate.
21. processing method as claimed in claim 17 also comprises before using this two fluids water smoke to clean this substrate:
This substrate is set on a rotating disk; And
This rotating disk is rotated with rotating speed 30-200 per minute (rpm).
22. processing method as claimed in claim 21, wherein use this two fluids water smoke clean this substrate before about 1-3 rotate this rotating disk second, and during this dial rotation, the step of using this two fluids water smoke to clean this substrate is carried out simultaneously together.
23. the processing method of a substrate comprises:
One substrate is provided;
Use one or two fluid water smokes (atomic spray) to clean this substrate; And
After using this two fluids water smoke to clean this substrate, use this substrate of deionized water drip washing (rinse).
24. processing method as claimed in claim 23, wherein this two fluids water smoke comprises water and nitrogen.
25. processing method as claimed in claim 24, while wherein with this two fluids water smoke, cleaning this substrate, it is 15-300 cc/min (sccm) that glassware for drinking water has a flow, and nitrogen has a flow for being greater than 0 to 100 liter/minute (lpm).
26. processing method as claimed in claim 23, wherein be about this this substrates of deionized water drip washing of 1500 cc/min to have a flow.
27. processing method as claimed in claim 23, the step of wherein using this this substrate of deionized water drip washing use this two fluids water smoke clean the step of this substrate after approximately 10 microseconds (μ s) to 1 minute, start to carry out.
28. processing method as claimed in claim 23, wherein used this two fluids water smoke to clean after the step of this substrate approximately 10 microseconds (μ s) and, to 1 minute, start with this this substrate of deionized water drip washing.
29. processing method as claimed in claim 28, wherein, with this this substrate of deionized water drip washing the time, continue to clean this substrate with this two fluids water smoke simultaneously.
30. processing method as claimed in claim 23, wherein used this this substrate of deionized water drip washing to carry out together with the while with the step of using this two fluids water smoke to clean this substrate.
31. processing method as claimed in claim 23 also comprises before cleaning this substrate:
This substrate is set on a rotating disk; And
This rotating disk is rotated with rotating speed 30-200 per minute (rpm).
32. processing method as claimed in claim 31, wherein use this two fluids water smoke clean this substrate before about 1-3 rotate this rotating disk second.
33. processing method as claimed in claim 31, wherein during this dial rotation, clean the step of this substrate and carry out together simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101627891A CN103426722A (en) | 2012-05-23 | 2012-05-23 | Processing method for substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101627891A CN103426722A (en) | 2012-05-23 | 2012-05-23 | Processing method for substrate |
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| CN103426722A true CN103426722A (en) | 2013-12-04 |
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| CN2012101627891A Pending CN103426722A (en) | 2012-05-23 | 2012-05-23 | Processing method for substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105390418A (en) * | 2014-09-02 | 2016-03-09 | 杰宜斯科技有限公司 | Substrate liquid processing device and substrate liquid processing method |
| CN110544648A (en) * | 2018-12-11 | 2019-12-06 | 北京北方华创微电子装备有限公司 | Metal interconnection cleaning device and cleaning method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030079764A1 (en) * | 2001-11-01 | 2003-05-01 | Keizo Hirose | Substrate processing apparatus and substrate processing method |
| CN101154564A (en) * | 2006-09-26 | 2008-04-02 | 大日本网目版制造株式会社 | Substrate processing apparatus |
| US20080295868A1 (en) * | 2007-06-04 | 2008-12-04 | Hitachi Kokusai Electric Inc. | Manufacturing method of a semiconductor device and substrate cleaning apparatus |
-
2012
- 2012-05-23 CN CN2012101627891A patent/CN103426722A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030079764A1 (en) * | 2001-11-01 | 2003-05-01 | Keizo Hirose | Substrate processing apparatus and substrate processing method |
| CN101154564A (en) * | 2006-09-26 | 2008-04-02 | 大日本网目版制造株式会社 | Substrate processing apparatus |
| US20080295868A1 (en) * | 2007-06-04 | 2008-12-04 | Hitachi Kokusai Electric Inc. | Manufacturing method of a semiconductor device and substrate cleaning apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105390418A (en) * | 2014-09-02 | 2016-03-09 | 杰宜斯科技有限公司 | Substrate liquid processing device and substrate liquid processing method |
| CN105390418B (en) * | 2014-09-02 | 2018-11-13 | 杰宜斯科技有限公司 | Substrate liquid processing device and substrate liquid processing method |
| CN110544648A (en) * | 2018-12-11 | 2019-12-06 | 北京北方华创微电子装备有限公司 | Metal interconnection cleaning device and cleaning method |
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