JP6275412B2 - レーザ・ビームと荷電粒子ビームの一致位置合せ方法 - Google Patents

レーザ・ビームと荷電粒子ビームの一致位置合せ方法 Download PDF

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JP6275412B2
JP6275412B2 JP2013168166A JP2013168166A JP6275412B2 JP 6275412 B2 JP6275412 B2 JP 6275412B2 JP 2013168166 A JP2013168166 A JP 2013168166A JP 2013168166 A JP2013168166 A JP 2013168166A JP 6275412 B2 JP6275412 B2 JP 6275412B2
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Prior art keywords
laser beam
workpiece
alignment
eucentric
laser
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Japanese (ja)
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JP2014054670A5 (enExample
JP2014054670A (ja
Inventor
マーカス・ストロー
マーク・エマーソン
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エフ・イ−・アイ・カンパニー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/08—Holders for targets or for other objects to be irradiated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Laser Beam Processing (AREA)
  • Microscoopes, Condenser (AREA)
JP2013168166A 2012-09-07 2013-08-13 レーザ・ビームと荷電粒子ビームの一致位置合せ方法 Active JP6275412B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/607,329 2012-09-07
US13/607,329 US8766213B2 (en) 2012-09-07 2012-09-07 Automated method for coincident alignment of a laser beam and a charged particle beam

Publications (3)

Publication Number Publication Date
JP2014054670A JP2014054670A (ja) 2014-03-27
JP2014054670A5 JP2014054670A5 (enExample) 2016-09-29
JP6275412B2 true JP6275412B2 (ja) 2018-02-07

Family

ID=49111054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013168166A Active JP6275412B2 (ja) 2012-09-07 2013-08-13 レーザ・ビームと荷電粒子ビームの一致位置合せ方法

Country Status (4)

Country Link
US (3) US8766213B2 (enExample)
EP (1) EP2706556B1 (enExample)
JP (1) JP6275412B2 (enExample)
CN (1) CN103681190B (enExample)

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US8766213B2 (en) * 2012-09-07 2014-07-01 Fei Company Automated method for coincident alignment of a laser beam and a charged particle beam
US9991090B2 (en) 2012-11-15 2018-06-05 Fei Company Dual laser beam system used with an electron microscope and FIB
KR102695912B1 (ko) 2014-12-05 2024-08-14 컨버전트 덴탈 인크 레이저 빔의 정렬을 위한 시스템들 및 방법들
US9536697B2 (en) * 2015-05-19 2017-01-03 Hermes Microvision Inc. System and method for calibrating charge-regulating module
US9978557B2 (en) 2016-04-21 2018-05-22 Fei Company System for orienting a sample using a diffraction pattern
US10777383B2 (en) * 2017-07-10 2020-09-15 Fei Company Method for alignment of a light beam to a charged particle beam
JP7308710B2 (ja) * 2019-09-25 2023-07-14 株式会社日立ハイテクサイエンス 集束イオンビーム装置
CN114729868A (zh) * 2019-11-22 2022-07-08 粒子监测系统有限公司 先进的用于干涉测量颗粒检测和具有小大小尺寸的颗粒的检测的系统和方法
US11257657B2 (en) * 2020-02-18 2022-02-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with interferometer for height measurement
EP4097271A1 (en) * 2020-04-09 2022-12-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Thermal laser evaporation system and method of providing a thermal laser beam at a source
JP7536891B2 (ja) * 2020-05-21 2024-08-20 アプライド マテリアルズ インコーポレイテッド 光照射を使用した基板の電気的クランプを強化するためのシステム装置及び方法
US11315819B2 (en) 2020-05-21 2022-04-26 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11538714B2 (en) * 2020-05-21 2022-12-27 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11875967B2 (en) * 2020-05-21 2024-01-16 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
CN115917698A (zh) * 2020-06-10 2023-04-04 Asml荷兰有限公司 带电粒子设备的可更换模块
CN113964006B (zh) * 2020-07-21 2023-09-12 聚束科技（北京）有限公司 一种粒子束装置束斑追踪方法及系统
KR20240034830A (ko) * 2021-07-22 2024-03-14 에이에스엠엘 네델란즈 비.브이. 하전 입자 시스템의 전자 소스 안정화를 위한 시스템 및 장치
DE102021128117B4 (de) 2021-10-28 2025-02-13 Carl Zeiss Microscopy Gmbh Verfahren zum Herstellen einer Probe an einem Objekt, Computerprogrammprodukt und Materialbearbeitungseinrichtung zum Durchführen des Verfahrens
CN115083869B (zh) * 2022-06-06 2025-09-26 惠然科技有限公司 机械对中装置及电子显微镜
US12444022B2 (en) * 2023-06-30 2025-10-14 Fei Company Focus stacking applications for sample preparation

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JPH07232290A (ja) * 1994-02-23 1995-09-05 Matsushita Electric Ind Co Ltd レーザ加工機用焦点調整装置
JPH1123481A (ja) * 1997-06-27 1999-01-29 Advantest Corp 微小物分析装置、および該微小物分析装置に用いられる微小物検出手段の調整装置
US6828566B2 (en) * 1997-07-22 2004-12-07 Hitachi Ltd Method and apparatus for specimen fabrication
JPH11179579A (ja) * 1997-12-22 1999-07-06 Sony Corp 光軸補正方法、装置及びそれを利用した露光加工装置
JP2002334818A (ja) * 2001-05-08 2002-11-22 Tokyo Electron Ltd 半導体製造装置、および半導体装置の製造方法
US6661009B1 (en) * 2002-05-31 2003-12-09 Fei Company Apparatus for tilting a beam system
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WO2010006067A2 (en) 2008-07-09 2010-01-14 Fei Company Method and apparatus for laser machining
US8168961B2 (en) 2008-11-26 2012-05-01 Fei Company Charged particle beam masking for laser ablation micromachining
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DE102010008296A1 (de) * 2010-02-17 2011-08-18 Carl Zeiss NTS GmbH, 73447 Laserbearbeitungssystem, Objekthalter und Laserbearbeitungsverfahren
JP5756585B2 (ja) * 2010-04-07 2015-07-29 エフ・イ−・アイ・カンパニー 組合せレーザおよび荷電粒子ビーム・システム
CN102364329A (zh) * 2011-09-19 2012-02-29 华东师范大学 激光诱导击穿光谱自动采集系统
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US8766213B2 (en) * 2012-09-07 2014-07-01 Fei Company Automated method for coincident alignment of a laser beam and a charged particle beam

Also Published As

Publication number Publication date
EP2706556A2 (en) 2014-03-12
US9263235B2 (en) 2016-02-16
EP2706556B1 (en) 2017-05-31
EP2706556A3 (en) 2016-03-09
US20150060660A1 (en) 2015-03-05
CN103681190A (zh) 2014-03-26
US20140070113A1 (en) 2014-03-13
US8766213B2 (en) 2014-07-01
US9754764B2 (en) 2017-09-05
JP2014054670A (ja) 2014-03-27
US20160126059A1 (en) 2016-05-05
CN103681190B (zh) 2018-06-05

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