JP6244857B2 - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- JP6244857B2 JP6244857B2 JP2013243781A JP2013243781A JP6244857B2 JP 6244857 B2 JP6244857 B2 JP 6244857B2 JP 2013243781 A JP2013243781 A JP 2013243781A JP 2013243781 A JP2013243781 A JP 2013243781A JP 6244857 B2 JP6244857 B2 JP 6244857B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting device
- wavelength
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920005989 resin Polymers 0.000 claims description 26
- 239000011347 resin Substances 0.000 claims description 26
- 239000011572 manganese Substances 0.000 claims description 14
- -1 zinc magnesium aluminate Chemical class 0.000 claims description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 229910052693 Europium Inorganic materials 0.000 claims description 11
- 229910052684 Cerium Inorganic materials 0.000 claims description 10
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 10
- 239000011777 magnesium Substances 0.000 claims description 10
- 229920001187 thermosetting polymer Polymers 0.000 claims description 10
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 150000004645 aluminates Chemical class 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- 229910052771 Terbium Inorganic materials 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 229910052712 strontium Inorganic materials 0.000 claims description 7
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 5
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 239000012190 activator Substances 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 150000002910 rare earth metals Chemical class 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 4
- 229920005992 thermoplastic resin Polymers 0.000 claims description 4
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims description 2
- 235000011180 diphosphates Nutrition 0.000 claims description 2
- LQFNMFDUAPEJRY-UHFFFAOYSA-K lanthanum(3+);phosphate Chemical class [La+3].[O-]P([O-])([O-])=O LQFNMFDUAPEJRY-UHFFFAOYSA-K 0.000 claims description 2
- 238000007561 laser diffraction method Methods 0.000 claims description 2
- 238000000790 scattering method Methods 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 19
- 238000000605 extraction Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- 229920002050 silicone resin Polymers 0.000 description 8
- 239000011575 calcium Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 238000001579 optical reflectometry Methods 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 238000000695 excitation spectrum Methods 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 3
- 235000021317 phosphate Nutrition 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000012744 reinforcing agent Substances 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 150000003673 urethanes Chemical class 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 239000011190 CEM-3 Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004606 Fillers/Extenders Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 229910000004 White lead Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000404 calcium aluminium silicate Substances 0.000 description 1
- 235000012215 calcium aluminium silicate Nutrition 0.000 description 1
- WNCYAPRTYDMSFP-UHFFFAOYSA-N calcium aluminosilicate Chemical compound [Al+3].[Al+3].[Ca+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O WNCYAPRTYDMSFP-UHFFFAOYSA-N 0.000 description 1
- 229940078583 calcium aluminosilicate Drugs 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012765 fibrous filler Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920006259 thermoplastic polyimide Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Description
本発明は、パッケージ部材中に反射部材を含む発光装置に関する。 The present invention relates to a light emitting device including a reflective member in a package member.
発光装置の代表的な構成として、特許文献１に示された構成が挙げられる。当該構成を図５に示す。この構成の発光装置は、底面と側壁とを持つ凹部を有するパッケージ１０１と、前記パッケージ１０１の凹部の底面に載置される発光素子１０２と、前記パッケージ１０１の凹部内に配置され、前記発光素子１０２が封止される封止部材１０３と、前記底面を構成し、前記発光素子１０２と電気的に接続した一対の電極を有する基体１０４とを備えている。なお、１０５は基体１０４と発光素子１０２とを電気的に接続するボンディングワイヤである。 As a typical configuration of the light emitting device, a configuration shown in Patent Document 1 can be given. This configuration is shown in FIG. The light emitting device having this configuration includes a package 101 having a recess having a bottom surface and a side wall, a light emitting element 102 placed on the bottom surface of the recess of the package 101, and the light emitting element disposed in the recess of the package 101. A sealing member 103 for sealing 102; and a base 104 having a pair of electrodes that constitutes the bottom surface and is electrically connected to the light emitting element 102. Reference numeral 105 denotes a bonding wire for electrically connecting the base body 104 and the light emitting element 102.
前記パッケージ１０１には光反射性（光取り出し効率）、耐熱性及び耐光性などの各種の特性を有することが求められ、優れた光取り出し効率を達成するため、パッケージを構成する母材樹脂に酸化チタンや酸化亜鉛などの反射部材を含有させるなどの検討が行われている（特許文献１及び２）。 The package 101 is required to have various characteristics such as light reflectivity (light extraction efficiency), heat resistance, and light resistance. In order to achieve excellent light extraction efficiency, the base resin constituting the package is oxidized. Studies such as inclusion of reflective members such as titanium and zinc oxide have been made (Patent Documents 1 and 2).
さらに、より光取り出し効率を改善するために、前記パッケージの側壁に、蛍光体としてＹＡＧを分散させた蛍光体分散層を設けることが提案されている（特許文献３）。また、パッケージの側壁に蛍光物質であるＹＡＧを分散させ、さらに前記側壁の形状を、発光素子から側方に放射された光をパッケージ底面から離れる方向に反射させる曲面形状とすることも提案されている（特許文献４）。 Furthermore, in order to further improve the light extraction efficiency, it has been proposed to provide a phosphor dispersion layer in which YAG is dispersed as a phosphor on the side wall of the package (Patent Document 3). It has also been proposed to disperse YAG, which is a fluorescent material, on the side wall of the package, and to make the shape of the side wall a curved shape that reflects light emitted from the light emitting element to the side in a direction away from the bottom surface of the package. (Patent Document 4).
しかしながら、これらのような構成を採用しても、なお光取り出し効率向上の点において改善の余地がある。 However, even if such a configuration is adopted, there is still room for improvement in terms of improving the light extraction efficiency.
上記従来技術に鑑み、本発明は、パッケージ部材を有する、より光取り出し効率に優れた発光装置を提供することを目的とする。 In view of the above prior art, an object of the present invention is to provide a light emitting device that has a package member and is more excellent in light extraction efficiency.
本発明者は上記課題を解決するために鋭意検討した結果、反射部材のうち、自身が紫外光を吸収して可視光を発光できる反射部材、すなわち発光素子からの可視光を反射するだけでなく、紫外光を吸収して可視光を発光することのできる反射部材をパッケージ部材に含有させることで、発光装置の光取り出し効率をさらに高めることができることを見出し、本発明を完成するに至った。 As a result of intensive studies to solve the above problems, the inventor not only reflects the visible light from the light emitting element, but also the reflective member that can absorb ultraviolet light and emit visible light. The present inventors have found that the light extraction efficiency of the light emitting device can be further improved by incorporating a reflective member capable of absorbing visible light and absorbing visible light into the package member, thereby completing the present invention.
すなわち本発明の要旨は、一対の電極を有する基体と、該基体上に設けられ、前記一対の電極に電気的に接続した発光素子と、前記基体に接して設けられ、前記発光素子を取り囲むパッケージ部材と、を有する発光装置であって、前記パッケージ部材が、紫外光を吸収して可視光を発光する白色の反射部材Ａを含む、発光装置である。 That is, the gist of the present invention is a base having a pair of electrodes, a light emitting element provided on the base and electrically connected to the pair of electrodes, and a package provided in contact with the base and surrounding the light emitting element. The package member includes a white reflective member A that absorbs ultraviolet light and emits visible light.
本発明によれば、特定の反射部材を採用することで、パッケージ部材を有する、より光取り出し効率に優れた発光装置が提供される。 ADVANTAGE OF THE INVENTION According to this invention, the light-emitting device which was excellent in the light extraction efficiency which has a package member by employ | adopting a specific reflection member is provided.
以下、本発明の発光装置について、図面を参照しながら詳細に説明する。必要に応じて具体的な実施例を示すが、それは本発明の技術思想を具体化するための例示であって、本発明をそれらに限定するものではない。また、以下に記載する構成部品の材質、形状、その相対的配置等は特に特定的な記載がない限りは、本発明の範囲をそれのみに限定する趣旨ではなく、単なる説明例にすぎない。 Hereinafter, a light emitting device of the present invention will be described in detail with reference to the drawings. Specific examples will be shown as needed, but these are examples for embodying the technical idea of the present invention, and the present invention is not limited to them. Further, the materials, shapes, relative arrangements, and the like of the component parts described below are not intended to limit the scope of the present invention, but merely illustrative examples, unless otherwise specified.
また、本明細書において基体上などでいう「上」とは、必ずしもその基体などの上面に接触して部材が形成される場合に限られず、離間して上方に形成される場合も含んでおり、部材と部材の間に何らかの別の部材が存在する場合も包含する意味で使用する。 Further, in the present specification, the term “upper” as used on the substrate or the like is not necessarily limited to the case where the member is formed in contact with the upper surface of the substrate or the like, but includes the case where the member is formed apart and upward. In addition, it is used in the meaning including the case where some other member exists between the members.
また、本明細書において、特に特定的な記載がない限り、紫外光とは波長２００ｎｍ以上３８０ｎｍ未満の光とし、可視光とは波長３８０ｎｍ以上７８０ｎｍ以下の光とする。 In this specification, unless otherwise specified, ultraviolet light is light having a wavelength of 200 nm to less than 380 nm, and visible light is light having a wavelength of 380 nm to 780 nm.
［発光装置］
本発明の発光装置の代表的な実施態様の断面模式図を図１に示す。また、別の実施態様の断面模式図を図２に示す。
[Light emitting device]
FIG. 1 shows a schematic cross-sectional view of a typical embodiment of the light emitting device of the present invention. Moreover, the cross-sectional schematic diagram of another embodiment is shown in FIG.
図１及び図２に示される通り、一実施態様の発光装置１０は、一対の電極を有する基体１２と、基体１２上に設けられ、前記一対の電極に電気的に接続した発光素子１４と、前記基体１２に接して設けられ、発光素子１４を取り囲むパッケージ部材１８と、を有する。また、発光装置１０は通常、少なくとも前記発光素子１４を被覆する被覆部材２２を有する。さらに、前記パッケージ部材１８が、紫外光を吸収して可視光を発光する白色の反射部材Ａ ２０を含む。なお、図１の態様では前記発光素子１４は基体１２に接着剤１６を介して接着され、基体１２における一対の電極とはボンディングワイヤ２４を介して電気的に接続している。また、図２の態様では前記発光素子１４は基体１２における一対の電極と直接接続している。以下、一実施態様の発光装置１０を構成する各部材について説明する。 As shown in FIGS. 1 and 2, a light emitting device 10 according to an embodiment includes a base 12 having a pair of electrodes, a light emitting element 14 provided on the base 12 and electrically connected to the pair of electrodes, A package member 18 provided in contact with the base 12 and surrounding the light emitting element 14. The light emitting device 10 usually has a covering member 22 that covers at least the light emitting element 14. Further, the package member 18 includes a white reflective member A 20 that absorbs ultraviolet light and emits visible light. In the embodiment of FIG. 1, the light emitting element 14 is bonded to the base 12 via an adhesive 16 and is electrically connected to a pair of electrodes on the base 12 via bonding wires 24. In the embodiment of FIG. 2, the light emitting element 14 is directly connected to a pair of electrodes on the base 12. Hereinafter, each member which comprises the light-emitting device 10 of one embodiment is demonstrated.
＜基体１２＞
基体１２は前記の通り一対の電極を有しており、任意に三つ以上の電極を備えていてもよい。一対の電極の態様としては従来公知の各種の態様が可能である。例えば図１に示す態様では、基体１２は概略第１のリードフレーム及び第２のリードフレームから構成され、これらが一対の電極である。そして一方のリードフレームがボンディングワイヤ２４の一方を介して発光素子１４のｐ側電極と電気的に接続し、他方のリードフレームがボンディングワイヤ２４の他方を介して発光素子１４のｎ側電極と電気的に接続される。この接続により、例えば前記電極を介して発光素子１４に外部電力が供給される。
<Substrate 12>
The base body 12 has a pair of electrodes as described above, and may optionally include three or more electrodes. As a mode of the pair of electrodes, various conventionally known modes are possible. For example, in the embodiment shown in FIG. 1, the base 12 is generally composed of a first lead frame and a second lead frame, which are a pair of electrodes. One lead frame is electrically connected to the p-side electrode of the light-emitting element 14 via one of the bonding wires 24, and the other lead frame is electrically connected to the n-side electrode of the light-emitting element 14 via the other bonding wire 24. Connected. By this connection, for example, external power is supplied to the light emitting element 14 through the electrode.
なお、第１のリードフレーム及び第２のリードフレームは、絶縁体１２ａにより絶縁される。絶縁体１２ａは、下記に説明する基板と同様の材料から形成することができ、また後述するパッケージ部材１８と同様の材料から形成することもできる。特に、パッケージ部材１８を基体１２に一体的に成形する場合、絶縁体１２ａはパッケージ部材１８と一体化されてもよい。 The first lead frame and the second lead frame are insulated by the insulator 12a. The insulator 12a can be formed of the same material as that of the substrate described below, and can also be formed of the same material as that of the package member 18 described later. In particular, when the package member 18 is formed integrally with the base body 12, the insulator 12 a may be integrated with the package member 18.
また例えば図２に示す態様では、基体１２は概略第１の突起電極（バンプ）及び第２の突起電極（バンプ）から構成され、これらが一対の電極である。そして一方の突起電極が発光素子１４のｐ側電極と直接接続され、他方の突起電極が発光素子１４のｎ側電極と直接接続される。この接続により、例えば前記電極を介して発光素子１４に外部電力が供給される。 Further, for example, in the embodiment shown in FIG. 2, the base 12 is generally composed of a first protruding electrode (bump) and a second protruding electrode (bump), which are a pair of electrodes. One protruding electrode is directly connected to the p-side electrode of the light emitting element 14, and the other protruding electrode is directly connected to the n-side electrode of the light emitting element 14. By this connection, for example, external power is supplied to the light emitting element 14 through the electrode.
基体１２の有する一対の電極は、基板上にパッド電極や配線パターンの形態で形成したものであってもよく、あるいは基板上にリードフレームを形成して発光素子１４と電気的に接続し、このリードフレームを基板の発光素子１４が配置される面とは反対側の面に回り込ませ、外部電源等との接続に供してもよい。なお電極が配線パターンである場合、その上面視における形状は特に限定されるものではなく、通常の、発光素子を搭載する基板等における配線パターンと同様又はそれに準じた形状等とすることができる。 The pair of electrodes of the substrate 12 may be formed on the substrate in the form of a pad electrode or a wiring pattern, or a lead frame is formed on the substrate and electrically connected to the light emitting element 14. The lead frame may wrap around the surface of the substrate opposite to the surface on which the light emitting element 14 is disposed, and may be used for connection to an external power source or the like. Note that when the electrode is a wiring pattern, the shape of the top view is not particularly limited, and may be a shape similar to or equivalent to the wiring pattern of a normal substrate on which a light-emitting element is mounted.
このような一対の電極を形成する材料としては、Ｆｅ、Ｃｕ、Ｎｉ、Ａｌ、Ａｇ、Ａｕ、Ｐｄ、これらを含む金属（合金）やメッキ、又はそれらを積層した材料を用いることが好ましく、発光装置１０の光取り出し効率の向上のため反射率や、基板が存在する場合にはそれとの密着性を考慮して適宜選択される。特に、電極の最表面がＡｇであれば、高い光取り出し効率を得やすいので好ましい。 As a material for forming such a pair of electrodes, it is preferable to use Fe, Cu, Ni, Al, Ag, Au, Pd, a metal (alloy) containing these, plating, or a material in which these are laminated, and light emission. In order to improve the light extraction efficiency of the apparatus 10, it is appropriately selected in consideration of the reflectance and the adhesion with the substrate, if any. In particular, it is preferable that the outermost surface of the electrode is Ag because high light extraction efficiency is easily obtained.
一対の電極の厚みは特に限定されるものではなく、当該分野で通常使用される電極の厚みを適用することができる。例えば、前記電極の厚みは数μｍ〜数ｍｍ程度とすることができる。 The thickness of the pair of electrodes is not particularly limited, and the thickness of the electrode normally used in the field can be applied. For example, the thickness of the electrode can be about several μm to several mm.
また、基体１２が基板上にパッド電極が形成されてなる場合などにおける基板は、発光装置１０の支持体となる部材であり、その目的や用途等に応じて、また、発光素子１４の実装、光反射率、他の部材との密着性などを考慮して、適切な公知の各種材料を用いて形成することができる。そのような材料としては、例えば、セラミック、樹脂、ガラス等を用いることができる。 Further, the substrate in the case where the base 12 is formed with a pad electrode on the substrate is a member that becomes a support of the light emitting device 10, and according to the purpose and application, the mounting of the light emitting element 14, In consideration of light reflectivity, adhesion to other members, and the like, it can be formed using various known materials. As such a material, for example, ceramic, resin, glass or the like can be used.
前記セラミックとしては、例えば、窒化アルミニウム、アルミナ、ＬＴＣＣ（Low Temperature Co-fired Ceramics）等を用いることができる。 As said ceramic, aluminum nitride, an alumina, LTCC (Low Temperature Co-fired Ceramics) etc. can be used, for example.
また前記樹脂としては、熱硬化性樹脂や熱可塑性樹脂を用いることができ、具体的には、エポキシ樹脂、シリコーン樹脂、シリコーン変性エポキシ樹脂などの変性エポキシ樹脂、シリコーン樹脂、エポキシ変性シリコーン樹脂などの変性シリコーン樹脂、ポリイミド樹脂、変性ポリイミド樹脂、ウレタン樹脂、アクリレート樹脂、変性ウレタン樹脂、テフロン（登録商標）、ＦＲ−４、ＣＥＭ−３などをあげることができる。さらに、ポリエチレンテレフタレート（ＰＥＴ）、ポリエチレンナフタレート（ＰＥＮ）、液晶ポリマー、ナイロン等も用いることができる。さらにこれらの樹脂中には、Ａｌ２Ｏ３、ＭｇＯ、ＭｇＣＯ３、ＣａＣＯ３、Ｍｇ（ＯＨ）２、Ｃａ（ＯＨ）２などの微粒子などを含有させてもよい。 Further, as the resin, a thermosetting resin or a thermoplastic resin can be used, and specifically, a modified epoxy resin such as an epoxy resin, a silicone resin, or a silicone-modified epoxy resin, a silicone resin, an epoxy-modified silicone resin, or the like. Examples thereof include modified silicone resins, polyimide resins, modified polyimide resins, urethane resins, acrylate resins, modified urethane resins, Teflon (registered trademark), FR-4, and CEM-3. Further, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), liquid crystal polymer, nylon, and the like can be used. Further, these resins may contain fine particles such as Al 2 O 3 , MgO, MgCO 3 , CaCO 3 , Mg (OH) 2 , and Ca (OH) 2 .
また、基体１２を形成する材料に、発光素子１４からの下向き（基体１２の方向への）の発光を反射して発光装置１０の光取り出し効率を向上させるため、光反射率の高い材料（例えば、酸化チタン等の白色フィラーなど）を含有させてもよい。 Further, a material having a high light reflectivity (for example, a material having a high light reflectance, for example, reflects light emitted downward (in the direction of the substrate 12) from the light emitting element 14 to improve the light extraction efficiency of the light emitting device 10 to the material forming the substrate 12. Or a white filler such as titanium oxide).
以上説明した各種形態を取り得る基体１２の厚みは、当該技術分野で採用されているものであれば特に制限されず、例えば１０μｍ〜数ｍｍ程度の厚みとすることができる。 The thickness of the base 12 that can take the various forms described above is not particularly limited as long as it is employed in the technical field, and can be, for example, about 10 μm to several mm.
また、一実施態様の発光装置１０の上面視における基体１２の形状は、特に限定されるものではなく、種々の形状とすることができる。例えば、四角形、長方形、多角形、円形、楕円形、及びそれらを組み合わせた形状とすることができる。 In addition, the shape of the base 12 in the top view of the light emitting device 10 of one embodiment is not particularly limited, and can be various shapes. For example, a quadrangle, a rectangle, a polygon, a circle, an ellipse, and a combination thereof can be used.
＜発光素子１４＞
上述の通り発光素子１４が基体１２上に設けられ、その一対の電極と電気的に接続されている。発光素子１４の構成は特に制限されるものではなく、従来公知の発光素子の各種構成が特に制限なく採用可能である。
<Light emitting element 14>
As described above, the light-emitting element 14 is provided on the base 12 and is electrically connected to the pair of electrodes. The configuration of the light emitting element 14 is not particularly limited, and various configurations of conventionally known light emitting elements can be employed without any particular limitation.
代表的には、発光素子１４はｐ型半導体層、発光を行う活性層、及びｎ型半導体層を有し、ｐ型半導体層及びｎ型半導体層のそれぞれが、基体１２の一対の電極のそれぞれと電気的に接続し、外部電力の供給を受ける。 Typically, the light-emitting element 14 includes a p-type semiconductor layer, an active layer that emits light, and an n-type semiconductor layer, and each of the p-type semiconductor layer and the n-type semiconductor layer is a pair of electrodes of the base 12. Is electrically connected to the external power supply.
前記半導体層と一対の電極との接続のために、一般にｐ型半導体層及びｎ型半導体層上にそれぞれｐ側電極及びｎ側電極を設ける。図１に示された態様では発光素子１４は、二つのボンディングワイヤ２４の一端がそれぞれｐ側電極及びｎ側電極に接続し、その他端が一対の電極のそれぞれと接続している。そして発光素子１４は、接着剤１６により物理的に電極及び／又は基体１２上のその他の位置に固定される。 In order to connect the semiconductor layer and the pair of electrodes, a p-side electrode and an n-side electrode are generally provided on the p-type semiconductor layer and the n-type semiconductor layer, respectively. In the embodiment shown in FIG. 1, the light emitting element 14 has one end of two bonding wires 24 connected to the p-side electrode and the n-side electrode, respectively, and the other end connected to each of the pair of electrodes. The light emitting element 14 is physically fixed to the electrode and / or other position on the substrate 12 by the adhesive 16.
その他の態様として、ｐ型半導体層、活性層及びｎ型半導体層が積層されてなる半導体層の下部にｐ側電極を設けて、これを介してｐ型半導体層を直接電極に接続し、さらに半導体層上に設けられたｎ側電極を、ボンディングワイヤを介して電極の他方に接続することもできる。 As another aspect, a p-side electrode is provided below the semiconductor layer formed by stacking the p-type semiconductor layer, the active layer, and the n-type semiconductor layer, and the p-type semiconductor layer is directly connected to the electrode through the p-side electrode. The n-side electrode provided on the semiconductor layer can be connected to the other electrode through a bonding wire.
発光素子１４における各層の構成としては、従来公知の各種の構成を特に制限なく採用可能である。例えば前記ｎ型半導体層は、ＧａＮのコンタクト層、ＩｎＧａＮ／ＧａＮの多層膜構造、ｐ型半導体層は、ＧａＮのコンタクト層、ＡｌＧａＮ，ＩｎＧａＮ，ＧａＮの単層、多層膜構造等を用いて構成することができる。また、各層の一部に、絶縁性、半絶縁性の領域、層、又は逆導電型の領域、層を設けてもよい。なお、発光素子１４は、サファイアなど半導体層の結晶成長用基板を有してもよいし、結晶成長用基板が除去された後シリコンなど別の接合用基板が接合されてもよいし、基板を有さなくてもよい。 As a structure of each layer in the light emitting element 14, various conventionally known structures can be employed without any particular limitation. For example, the n-type semiconductor layer is constituted by using a GaN contact layer, an InGaN / GaN multilayer structure, and the p-type semiconductor layer is constituted by using a GaN contact layer, an AlGaN, InGaN, GaN single layer, a multilayer film structure, or the like. be able to. Further, an insulating or semi-insulating region or layer, or a region or layer having a reverse conductivity type may be provided in part of each layer. Note that the light emitting element 14 may include a crystal growth substrate of a semiconductor layer such as sapphire, or another bonding substrate such as silicon may be bonded after the crystal growth substrate is removed. You don't have to.
また、発光素子１４における活性層は、例えば、ＡｌaＩｎbＧａ1-a-bＮ（０≦ａ≦１、０≦ｂ≦１、ａ＋ｂ≦１）からなる井戸層と、ＡｌcＩｎdＧａ1-c-dＮ（０≦ｃ≦１、０≦ｄ≦１、ｃ＋ｄ≦１）からなる障壁層とを含む量子井戸構造を有する。活性層から出射される光の波長は、発光素子１４の目的、用途等に応じて紫外域から可視域まで選択できる。可視光を発光する発光装置の発光効率の観点からは、活性層から可視光が出射されることが好ましい。より詳細には、例えば波長３８０ｎｍ以上６００ｎｍ以下、好ましくは波長４００ｎｍ以上５００ｎｍ以下、より好ましくは波長４３０ｎｍ以上４７０ｎｍ以下である。 The active layer in the light-emitting element 14 includes, for example, a well layer made of Al a In b Ga 1-ab N (0 ≦ a ≦ 1, 0 ≦ b ≦ 1, a + b ≦ 1), and Al c In d Ga 1. a quantum well structure including a barrier layer made of -cd N (0 ≦ c ≦ 1, 0 ≦ d ≦ 1, c + d ≦ 1). The wavelength of the light emitted from the active layer can be selected from the ultraviolet region to the visible region depending on the purpose and application of the light emitting element 14. From the viewpoint of the luminous efficiency of the light emitting device that emits visible light, it is preferable that visible light is emitted from the active layer. More specifically, for example, the wavelength is 380 nm to 600 nm, preferably the wavelength is 400 nm to 500 nm, and more preferably the wavelength is 430 nm to 470 nm.
発光素子１４におけるｎ側電極及びｐ側電極の具体例としては、例えばＮｉ，Ｐｔ，Ｐｄ，Ｒｈ，Ｒｕ，Ｏｓ，Ｉｒ，Ｔｉ，Ｚｒ，Ｈｆ，Ｖ，Ｎｂ，Ｔａ，Ｃｏ，Ｆｅ，Ｍｎ，Ｍｏ，Ｃｒ，Ｗ，Ｌａ，Ｃｕ，Ａｇ，Ｙ，Ａｌ，Ｓｉ，Ａｕなどの金属またはこれらの酸化物あるいはこれらの窒化物が挙げられる。 Specific examples of the n-side electrode and the p-side electrode in the light emitting element 14 include, for example, Ni, Pt, Pd, Rh, Ru, Os, Ir, Ti, Zr, Hf, V, Nb, Ta, Co, Fe, Mn, Examples thereof include metals such as Mo, Cr, W, La, Cu, Ag, Y, Al, Si, and Au, oxides thereof, and nitrides thereof.
さらに発光素子１４は、その下面、つまり基体１２と対向する面に、誘電体多層膜やＡｇ、Ａｌ等の光反射率の高い金属膜などからなる反射膜を有していてもよい。これにより発光素子１４の活性層から下向きに出射された光を反射し、発光装置１０の光取り出し効率を高めることができる。 Furthermore, the light emitting element 14 may have a reflective film made of a dielectric multilayer film or a metal film having a high light reflectance such as Ag or Al on the lower surface thereof, that is, the surface facing the substrate 12. Thereby, the light emitted downward from the active layer of the light emitting element 14 is reflected, and the light extraction efficiency of the light emitting device 10 can be increased.
＜パッケージ部材１８及び反射部材Ａ ２０＞
例えば図１に示す態様では、パッケージ部材１８は基体１２上に接して設けられ、発光素子１４を略中心にしてそれを取り囲み、凹部（開口部）を形成している。パッケージ部材１８の前記凹部を形成する側面の形状は特に制限されるものではなく、図１に示されるように略直線の斜面形状でもよいし、これに凹凸や段をつけた形状でもよいし、さらに曲面形状であってもよい。また、パッケージ部材１８の凹部形成側面とは反対側の側面及び上部表面の形状も特に制限されるものではない。
<Packaging member 18 and reflecting member A 20>
For example, in the embodiment shown in FIG. 1, the package member 18 is provided in contact with the base 12 and surrounds the light emitting element 14 substantially at the center to form a recess (opening). The shape of the side surface forming the concave portion of the package member 18 is not particularly limited, and may be a substantially straight slope shape as shown in FIG. Further, it may be a curved shape. Further, the shape of the side surface and the upper surface of the package member 18 opposite to the recess forming side surface is not particularly limited.
また例えば図２に示す態様では、パッケージ部材１８は、発光素子１４の上面を露出させて側面と下面を直接被覆している。また、パッケージ部材１８は、一対の突起電極である基体１２の下面を露出させて側面を直接被覆している。この基体１２の露出された下面が外部接続用の端子として機能する。 Further, for example, in the embodiment shown in FIG. 2, the package member 18 directly covers the side surface and the lower surface by exposing the upper surface of the light emitting element 14. Further, the package member 18 directly covers the side surfaces by exposing the lower surface of the base body 12 which is a pair of protruding electrodes. The exposed lower surface of the substrate 12 functions as a terminal for external connection.
前記パッケージ部材１８の形成材料としては従来公知の各種材料が使用可能で、例えば熱硬化性樹脂や熱可塑性樹脂が使用可能である。なお熱硬化性樹脂の場合は、発光装置１０の製造においては、例えば第三級アミン類や芳香族スルホニウム塩、酸無水物などの硬化剤を使用し、パッケージ部材１８の形状に成形したあと前記熱硬化性樹脂を硬化させるので、発光装置１０においては前記熱硬化性樹脂の硬化体として存在する。 As the material for forming the package member 18, various conventionally known materials can be used. For example, a thermosetting resin or a thermoplastic resin can be used. In the case of a thermosetting resin, in the manufacture of the light emitting device 10, for example, a tertiary amine, an aromatic sulfonium salt, an acid anhydride or the like is used, and after molding into the shape of the package member 18, Since the thermosetting resin is cured, the light emitting device 10 exists as a cured body of the thermosetting resin.
前記熱硬化性樹脂としては、例えば、エポキシ樹脂、熱硬化性シリコーン樹脂、シリコーン変性エポキシ樹脂などの変性エポキシ樹脂、熱硬化性ポリイミド樹脂、変性ポリイミド樹脂、熱硬化性ウレタン樹脂及び変性ウレタン樹脂が挙げられる。 Examples of the thermosetting resin include epoxy resins, thermosetting silicone resins, modified epoxy resins such as silicone-modified epoxy resins, thermosetting polyimide resins, modified polyimide resins, thermosetting urethane resins, and modified urethane resins. It is done.
前記熱可塑性樹脂としては、例えば、熱可塑性シリコーン樹脂、熱可塑性ポリイミド樹脂、熱可塑性ウレタン樹脂、フッ素樹脂、ポリエチレンテレフタレート（ＰＥＴ）、ポリエチレンナフタレート（ＰＥＮ）、ポリシクロヘキサンテレフタレート（ＰＣＴ）、液晶ポリマー及びポリアミド樹脂が挙げられる。 Examples of the thermoplastic resin include thermoplastic silicone resin, thermoplastic polyimide resin, thermoplastic urethane resin, fluororesin, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycyclohexane terephthalate (PCT), liquid crystal polymer, and the like. A polyamide resin is mentioned.
従来はパッケージ部材に、光取り出し効率向上のため、酸化チタンなどの反射部材を含有させたり、蛍光体であるＹＡＧを含有させたり、していた。一方本発明では、紫外光を吸収して可視光を発光することのできる反射部材Ａ ２０を含有させる。 Conventionally, in order to improve the light extraction efficiency, the package member has been made to contain a reflective member such as titanium oxide or YAG that is a phosphor. On the other hand, in this invention, reflective member A20 which absorbs ultraviolet light and can light-emit visible light is contained.
反射部材Ａ ２０は、従来使用されている反射部材と同様白色で（物体色が白く）、発光素子１４からの可視光を効率良く反射することができる。反射部材Ａ ２０の可視光の反射率は、通常波長４４０ｎｍ未満で０％以上１００％以下かつ波長４４０ｎｍ以上で６０％以上１００％以下であり、好ましくは、波長４４０ｎｍ未満で０％以上１００％以下かつ波長４４０ｎｍ以上で８０％以上１００％以下である。 The reflective member A 20 is white (the object color is white) as in the case of a conventionally used reflective member, and can efficiently reflect visible light from the light emitting element 14. The reflectance of the visible light of the reflective member A 20 is usually 0% or more and 100% or less at a wavelength of less than 440 nm and 60% or more and 100% or less at a wavelength of 440 nm or more, preferably 0% or more and 100% or less at a wavelength of less than 440 nm And it is 80% or more and 100% or less in wavelength 440nm or more.
さらに反射部材Ａ ２０は、例えば発光素子１４から発光される紫外光を吸収し、可視光を発光するので、可視光の反射効果だけでなく、自らの（紫外光を吸収しての）発光により、発光装置１０全体としての発光強度（光取り出し効率）を高める。なお、紫外光を吸収するので、反射部材Ａ ２０はパッケージ部材１８の耐光性を高める作用も有している。 Further, the reflecting member A 20 absorbs, for example, ultraviolet light emitted from the light emitting element 14 and emits visible light. Therefore, not only the reflection effect of visible light but also its own light emission (absorbing ultraviolet light). The light emission intensity (light extraction efficiency) of the light emitting device 10 as a whole is increased. Since the ultraviolet light is absorbed, the reflecting member A 20 also has an effect of improving the light resistance of the package member 18.
反射部材Ａ ２０は、好ましくは紫外光を吸収して短波長又は中波長の可視光を発光する。前記短波長の可視光とは波長３８０ｎｍ以上５００ｎｍ以下の光であり、好ましくは波長４００ｎｍ以上４７０ｎｍ以下の光である。また、前記中波長の可視光とは波長が５００ｎｍより長く６００ｎｍ以下の光である。 The reflective member A 20 preferably absorbs ultraviolet light and emits visible light having a short wavelength or medium wavelength. The short wavelength visible light is light having a wavelength of 380 nm to 500 nm, preferably light having a wavelength of 400 nm to 470 nm. Further, the medium-wavelength visible light is light having a wavelength longer than 500 nm and not longer than 600 nm.
反射部材Ａ ２０は、更に好ましくは、短波長の可視光を吸収して、該可視光よりも波長の長い短波長又は中波長の可視光を発光する。この反射部材Ａ ２０が吸収する短波長の可視光とは、波長が３８０ｎｍ以上４４０ｎｍ以下の光であり、またこの短波長可視光を吸収して反射部材Ａ ２０が発光する短波長又は中波長の可視光とは、波長が４００ｎｍ以上６００ｎｍ以下の光であり（なお、発光波長は吸収波長よりも長い）、発光素子１４の発光色に近似する青色や緑色の光を含む。 More preferably, the reflection member A 20 absorbs short-wavelength visible light and emits short-wavelength or medium-wavelength visible light having a longer wavelength than the visible light. The short wavelength visible light absorbed by the reflecting member A 20 is light having a wavelength of 380 nm or more and 440 nm or less, and the short wavelength or medium wavelength that the reflecting member A 20 emits light by absorbing the short wavelength visible light. Visible light is light having a wavelength of 400 nm to 600 nm (the emission wavelength is longer than the absorption wavelength), and includes blue or green light that approximates the emission color of the light emitting element 14.
このような反射部材Ａ ２０としては、例えば、アルミン酸塩を母体とし、賦活剤として希土類又はＭｎをＭサイトにドープしてなる蛍光体；リン酸塩を母体とする蛍光体；ハロリン酸系蛍光体；ＹＯＸ（Ｙ２Ｏ３：Ｅｕ）；並びに、ＺｎＳ：Ａｇ,Ｃｌが挙げられる。 As such a reflecting member A20, for example, a phosphor formed by using aluminate as a base and a rare earth or Mn doped as an activator at an M site; a phosphor having a phosphate as a base; a halophosphate fluorescent Body; YOX (Y 2 O 3 : Eu); and ZnS: Ag, Cl.
前記アルミン酸塩を母体とし、賦活剤として希土類又はＭｎをＭサイトにドープしてなる蛍光体としては、一般式（Ｂａ，Ｍ）Ａｌ１０Ｏ１７：Ｅｕ（但しＭはＳｒ，Ｃａ，及びＭｇからなる群より選ばれた少なくとも一種の元素）で表される２価のユーロピウム付活アルカリ土類アルミン酸塩（例えば、ＢＡＭ：Ｅｕ）、
一般式（Ｂａ，Ｍ）Ａｌ１０Ｏ１７：Ｅｕ，Ｍｎ（但しＭはＳｒ，Ｃａ，及びＭｇからなる群より選ばれた少なくとも一種の元素）で表される２価のユーロピウム及び２価のマンガン共付活アルカリ土類アルミン酸塩（例えば、ＢＡＭ：Ｅｕ,Ｍｎ）、
一般式Ｃｅ（Ｍｇ，Ｚｎ）ａＡｌ１１Ｏ１９−ａ：Ｍｎ（但し０．４≦ａ≦１．０）で表される３価のセリウム及び２価のマンガン共付活亜鉛マグネシウムアルミン酸塩（例えば、ＣＭＺ：Ｍｎ）、
式ＣｅＭｇＡｌ１１Ｏ１９：Ｔｂで表される３価のセリウム及び３価のテルビウム共付活マグネシウムアルミン酸塩（ＣＡＴ：Ｔｂ）が挙げられる。
The phosphor formed by using the aluminate as a base and doping rare earth or Mn as an activator at the M site has a general formula (Ba, M) Al 10 O 17 : Eu (where M is Sr, Ca, and Mg). A divalent europium-activated alkaline earth aluminate represented by at least one element selected from the group consisting of: BAM: Eu,
Divalent europium and divalent manganese represented by the general formula (Ba, M) Al 10 O 17 : Eu, Mn (where M is at least one element selected from the group consisting of Sr, Ca, and Mg) Co-activated alkaline earth aluminate (for example, BAM: Eu, Mn),
Formula Ce (Mg, Zn) a Al 11 O 19-a: Mn ( where 0.4 ≦ a ≦ 1.0) 3 trivalent cerium and bivalent active zinc magnesium aluminate with manganese co represented by (For example, CMZ: Mn),
Examples include trivalent cerium represented by the formula CeMgAl 11 O 19 : Tb and trivalent terbium co-activated magnesium aluminate (CAT: Tb).
前記リン酸塩を母体とする蛍光体としては、式ＬａＰＯ４：Ｃｅ，Ｔｂで表される３価のセリウム及び３価のテルビウム共付活ランタンリン酸塩（ＬＡＰ：Ｃｅ,Ｔｂ）、一般式Ｍ２Ｐ２Ｏ７：Ｅｕ（但しＭはＳｒ，Ｃａ，Ｂａ，及びＭｇからなる群より選ばれた少なくとも一種の元素）で表される２価のユーロピウム付活アルカリ土類ピロリン酸塩（例えばＳＰＥ：Ｅｕ）が挙げられる。 Examples of phosphors based on the phosphate include trivalent cerium and trivalent terbium co-activated lanthanum phosphates (LAP: Ce, Tb) represented by the formula LaPO 4 : Ce, Tb, Divalent europium-activated alkaline earth pyrophosphate represented by M 2 P 2 O 7 : Eu (where M is at least one element selected from the group consisting of Sr, Ca, Ba, and Mg) (for example, SPE: Eu).
前記ハロリン酸塩蛍光体としては、ユーロピウム付活アルカリ土類ハロリン酸塩（例えば、（Ｓｒ１−ｘ−ｙ−ｚＢａｘＣａｙＥｕｚ）５（ＰＯ４）３Ｃｌ（式中、ｘ、ｙ及びｚは、０≦ｘ＜０．５、０≦ｙ＜０．１、０．００５＜ｚ＜０．１を満たす値である。）、より具体的には、（Ｓｒ,Ｃａ,Ｂａ）１０（ＰＯ４）６Ｃｌ２：Ｅｕや、（Ｂａ,Ｃａ,Ｍｇ）１０（ＰＯ４）６Ｃｌ２：Ｅｕ,Ｓｂ,Ｍｎ）等が挙げられる。 Examples of the halophosphate phosphor, europium-activated alkaline earth halophosphate (e.g., (Sr 1-x-y -z Ba x Ca y Eu z) 5 (PO 4) 3 Cl ( wherein, x, y and z are values satisfying 0 ≦ x <0.5, 0 ≦ y <0.1, and 0.005 <z <0.1.) More specifically, (Sr, Ca, Ba ) 10 (PO 4 ) 6 Cl 2 : Eu, (Ba, Ca, Mg) 10 (PO 4 ) 6 Cl 2 : Eu, Sb, Mn) and the like.
例えば、図３は後述する表１に示す各種のＢＡＭ：Ｅｕ及びＬＡＰ、ＹＯＸの光反射率を示した図であり（光源として（Ｘｅランプ）を使用、比較として二酸化ケイ素及び酸化チタンの反射率も示す）、図４はＢＡＭ：Ｅｕ（後述する表１におけるＢ）の発光スペクトル及び励起スペクトルである。図３の下側の図は上側の図の反射率９０％以上の部分の拡大図である。 For example, FIG. 3 is a diagram showing the light reflectivity of various BAM: Eu, LAP, and YOX shown in Table 1 described later (using a (Xe lamp) as a light source, and the reflectivity of silicon dioxide and titanium oxide as a comparison. FIG. 4 shows the emission spectrum and excitation spectrum of BAM: Eu (B in Table 1 described later). The lower diagram of FIG. 3 is an enlarged view of a portion having a reflectance of 90% or more in the upper diagram.
図３より、反射部材Ａ ２０は、従来使用されている反射部材である二酸化ケイ素や酸化チタンに比べて、幅広い波長の光に対して同等かそれ以上の反射率を示し、特に波長４５０ｎｍ付近の光の反射率が優れていることがわかる。これは、反射部材Ａ ２０がこの光を反射するだけでなく、図４に示される通り、反射部材Ａ ２０自体がこの光を発光するからである。波長４５０ｎｍの光は青色光として発光装置においては重要な光であり、この部分の反射率（これは発光装置１０の光取り出し効率に結びつく）が優れていることは大きな利点である。 As shown in FIG. 3, the reflective member A 20 exhibits a reflectance equal to or higher than a wide range of light compared to silicon dioxide and titanium oxide, which are conventionally used reflective members. It turns out that the reflectance of light is excellent. This is because not only the reflection member A 20 reflects this light but also the reflection member A 20 itself emits this light as shown in FIG. Light having a wavelength of 450 nm is important light in the light emitting device as blue light, and it is a great advantage that the reflectance of this portion (which leads to light extraction efficiency of the light emitting device 10) is excellent.
その他にも、上述の通り前記反射部材Ａ ２０は好ましくは４００ｎｍ以上６００ｎｍ以下の波長の光を発光する。波長５５０ｎｍ付近の緑色の発光をする反射部材Ａ ２０は、緑色は人が最も強く感知する色であるので、人が認識する発光装置１０の光強度を高くすることができる。 In addition, as described above, the reflection member A20 preferably emits light having a wavelength of 400 nm or more and 600 nm or less. The reflecting member A 20 that emits green light near the wavelength of 550 nm can increase the light intensity of the light-emitting device 10 recognized by the person because green is the color most strongly perceived by the person.
以上説明した反射部材Ａ ２０の粒径は、レーザ回折・散乱法により測定（測定機器として例えば、（株）島津製作所製 ＳＡＬＤ−３１００）した平均粒径Ｄ５０として、好ましくは０．１μｍ以上５０μｍ以下であり、より好ましくは０．２μｍ以上３０μｍ以下である。参考までに、各種の粒径のＢＡＭ：Ｅｕの粒径のデータを下記表１に示す。Ｂが図４に示した発光スペクトル及び励起スペクトルの測定に用いた試料である。 The particle diameter of the reflective member A 20 described above is preferably 0.1 μm or more and 50 μm or less as an average particle diameter D50 measured by a laser diffraction / scattering method (for example, SALD-3100 manufactured by Shimadzu Corporation) as a measuring instrument. More preferably, it is 0.2 μm or more and 30 μm or less. For reference, the particle size data of BAM: Eu with various particle sizes are shown in Table 1 below. B is a sample used for the measurement of the emission spectrum and the excitation spectrum shown in FIG.
光散乱により物体色を白くし可視光の反射率を高くする観点からは、Ｄ５０は０．１μｍ以上０．５μｍ以下であることが好ましい。一方反射部材Ａ ２０の存在によりパッケージ部材１８の形成材料の粘度に影響が出て、パッケージ部材を形成するにあたって採用可能な成形方法に制限が出る等、ハンドリング特性を変化させる場合がある。この点や反射部材Ａ ２０の発光効率の観点からは、Ｄ５０が大きいことが望ましい。なお、Ｄ５０が大きくなりすぎると反射部材Ａ ２０同士の空隙が多くなり、隠蔽性が低くなる場合があるので、上記のＤ５０とした。 From the viewpoint of whitening the object color by light scattering and increasing the reflectance of visible light, D50 is preferably 0.1 μm or more and 0.5 μm or less. On the other hand, the presence of the reflecting member A 20 affects the viscosity of the forming material of the package member 18, and there are cases where handling characteristics are changed, such as limitations on the molding methods that can be employed when forming the package member. In view of this point and the luminous efficiency of the reflecting member A20, it is desirable that D50 is large. In addition, since D50 will increase the space | gap between reflection member A20 and concealment property may become low when D50 becomes large too, it was set as said D50.
また、パッケージ部材１８（１００重量％）中の反射部材Ａ ２０の含有量は、光取り出し効率の観点から、好ましくは０．１重量％以上９５重量％以下、より好ましくは５重量％以上９０重量％以下である。 Further, the content of the reflecting member A 20 in the package member 18 (100 wt%) is preferably 0.1 wt% or more and 95 wt% or less, more preferably 5 wt% or more and 90 wt% from the viewpoint of light extraction efficiency. % Or less.
以上説明した反射部材Ａ ２０をパッケージ部材１８中に含ませるが、反射部材Ａ ２０は、パッケージ部材１８中に均一に分散していても、パッケージ部材１８中において一定の偏りを持って分散していてもよい。 Although the reflection member A 20 described above is included in the package member 18, the reflection member A 20 is dispersed with a certain bias in the package member 18 even if the reflection member A 20 is uniformly dispersed in the package member 18. May be.
＜被覆部材２２＞
一実施態様の発光装置１０においては、透光性樹脂を母材とする被覆部材２２により少なくとも発光素子１４が被覆されている。より具体的には、例えば図１に示す実施態様では、発光装置１０における発光素子１４の積層方向上部の露出面と、基体１２の積層方向上部の露出面のうち、パッケージ部材１８が形成する凹部の内側の露出面とが、被覆部材２２により被覆されている。また例えば図２に示す態様では、発光素子１４の上面とパッケージ部材１８の上面とが、被覆部材２２により被覆されている。なお、被覆部材２２は、発光装置１０の必須の構成ではなく、省略することもできる。
<Coating member 22>
In the light emitting device 10 of one embodiment, at least the light emitting element 14 is covered with a covering member 22 having a translucent resin as a base material. More specifically, for example, in the embodiment shown in FIG. 1, the recess formed by the package member 18 among the exposed surface of the light emitting device 14 in the stacking direction and the exposed surface of the base 12 in the stacking direction. The exposed surface inside is covered with the covering member 22. For example, in the embodiment shown in FIG. 2, the upper surface of the light emitting element 14 and the upper surface of the package member 18 are covered with the covering member 22. The covering member 22 is not an essential component of the light emitting device 10 and can be omitted.
樹脂による被覆は発光装置１０の露出部分の物理的・熱的衝撃等からの保護などのために行うが、このような被覆に用いられる透光性樹脂としては、透光性の高いシリコーン樹脂、変性シリコーン樹脂等を使用することが好ましい。また、エポキシ樹脂、変性エポキシ樹脂、アクリル樹脂等の透光性を有する絶縁樹脂も用いることができる。さらに、ユリア樹脂、フッ素樹脂およびこれらの樹脂を少なくとも二種含むハイブリッド樹脂など、耐候性に優れた樹脂も利用できる。 The resin coating is performed to protect the exposed portion of the light emitting device 10 from physical and thermal shocks. As the translucent resin used for such a coating, a highly translucent silicone resin, It is preferable to use a modified silicone resin or the like. Further, a light-transmitting insulating resin such as an epoxy resin, a modified epoxy resin, or an acrylic resin can also be used. Furthermore, resins having excellent weather resistance such as urea resins, fluororesins, and hybrid resins containing at least two of these resins can also be used.
（波長変換部材）
また、被覆部材２２には、発光素子１４からの出射光の少なくとも一部を吸収して可視光を発光する波長変換部材を含有させることができる。この波長変換部材は、代表的には前記出射光によって励起され蛍光を発する蛍光物質である。波長変換部材を有することにより、光源の光を異なる波長の光に変換し、光源からの光と波長変換部材で波長変換された光との混色光を得ることが可能となる。さらに反射部材Ａ ２０が紫外光や短波長の可視光を吸収して、可視光を発光するので、この反射部材Ａ ２０からの光と波長変換部材で波長変換された光との混色光を得ることも可能である。
(Wavelength conversion member)
The covering member 22 can contain a wavelength conversion member that absorbs at least part of the light emitted from the light emitting element 14 and emits visible light. This wavelength conversion member is typically a fluorescent material that emits fluorescence when excited by the emitted light. By having the wavelength conversion member, it is possible to convert the light from the light source into light of a different wavelength and obtain mixed color light of the light from the light source and the light wavelength-converted by the wavelength conversion member. Further, since the reflecting member A20 absorbs ultraviolet light and short-wavelength visible light and emits visible light, mixed light of the light from the reflecting member A20 and the light wavelength-converted by the wavelength converting member is obtained. It is also possible.
波長変換部材としては、具体的には、セリウムで賦活されたイットリウム・アルミニウム・ガーネット、ユウロピウム及び／又はクロムで賦活された窒素含有アルミノ珪酸カルシウム、ユウロピウムで賦活されたサイアロン、ユウロピウムで賦活されたシリケート、マンガンで賦活されたフッ化珪酸カリウムなどを用いることができる。 Specific examples of the wavelength conversion member include cerium-activated yttrium, aluminum, garnet, europium and / or chromium-activated nitrogen-containing calcium aluminosilicate, europium-activated sialon, and europium-activated silicate. For example, potassium fluorosilicate activated with manganese can be used.
なお、波長変換部材は、透光性樹脂中にほぼ均一の割合で混合することも、部分的に偏在するよう、例えば発光素子１４の周辺において濃度が高くなるよう混合することもできる。 The wavelength conversion member can be mixed in the translucent resin at a substantially uniform ratio, or can be mixed so as to be partially unevenly distributed, for example, in the vicinity of the light emitting element 14.
また、波長変換部材は、一層からなる透光性樹脂中に一種類或いは二種類以上存在してもよい。これにより所望の波長の光を出射可能な発光装置１０を実現することができる。 Moreover, the wavelength conversion member may exist in one type or two or more types in the translucent resin which consists of one layer. Thereby, the light-emitting device 10 which can radiate | emit the light of a desired wavelength is realizable.
＜その他の添加部材＞
一実施態様の発光装置１０においては、本発明の効果を損なわない範囲で、パッケージ部材１８中に、反射部材Ａ以外の反射部材Ｂ、強化剤、酸化防止剤、シリコーン系等の低応力剤、ワックス類、ハロゲントラップ剤、硬化促進剤、変性剤、脱泡剤、レベリング剤、離型剤等を含有させてもよい。
<Other additive components>
In the light emitting device 10 according to one embodiment, the package member 18 includes a reflection member B other than the reflection member A, a reinforcing agent, an antioxidant, a silicone-based low stress agent, and the like within a range not impairing the effects of the present invention. Waxes, halogen trapping agents, curing accelerators, modifiers, defoaming agents, leveling agents, release agents and the like may be included.
前記反射部材Ｂとは、自身は発光せず、可視光を反射することのできる部材である。反射部材Ｂとしては従来公知の反射部材、例えば酸化チタン、酸化亜鉛、酸化ケイ素、鉛白、カオリン、炭酸カルシウム、酸化ジルコニウムなどが使用可能である。特に反射部材Ａがアルミン酸塩を母体とし、賦活剤として希土類又はＭｎをＭサイトにドープしてなる蛍光体や、リン酸塩を母体とする蛍光体である場合には、パッケージ部材１８の肉厚によっては、屈折率の関係から、隠蔽性が不十分（透過光大）となる場合があり得るので、反射部材Ｂの併用が望ましい。強化剤としては、珪酸カルシウム、チタン酸カリウム、ガラスなどの繊維状フィラーが使用可能である。 The reflection member B is a member that does not emit light and can reflect visible light. As the reflecting member B, a conventionally known reflecting member such as titanium oxide, zinc oxide, silicon oxide, white lead, kaolin, calcium carbonate, zirconium oxide or the like can be used. In particular, when the reflective member A is a phosphor formed by doping aluminate with a rare earth or Mn as an activator at the M site, or a phosphor based on phosphate, the meat of the package member 18 is used. Depending on the thickness, the concealability may be insufficient (large transmitted light) due to the relationship of the refractive index. As the reinforcing agent, fibrous fillers such as calcium silicate, potassium titanate, and glass can be used.
また、被覆部材２２には、上記で説明した波長変換部材の他、粘度増量剤、顔料及び光散乱材等、使用用途に応じて適切な部材を含有させることができ、これによって良好な指向特性を有する発光装置１０が得られる。同様に外来光や発光素子１４からの不要な波長の光をカットするフィルター効果を持たせたフィルター材として各種着色剤を含有させることもできる。 In addition to the wavelength conversion member described above, the covering member 22 can contain an appropriate member such as a viscosity extender, a pigment, and a light scattering material according to the intended use, thereby providing good directivity characteristics. Is obtained. Similarly, various colorants can be included as a filter material having a filter effect of cutting extraneous light or light having an unnecessary wavelength from the light emitting element 14.
＜発光装置１０の用途＞
以上説明した一実施態様の発光装置１０は、パッケージ部材１８中に特定の反射部材Ａ ２０を含み、これは発光素子１４からの可視光を反射するだけでなく、紫外光を吸収して可視光を発光することもできる。このため、発光装置１０は従来の発光装置よりも優れた光取り出し効率を達成し得るものであり、照明器具、液晶ディスプレイのバックライト、動画照明補助光源、その他の一般的民生用光源などに利用可能である。
<Use of light-emitting device 10>
The light-emitting device 10 according to one embodiment described above includes a specific reflecting member A 20 in the package member 18, which not only reflects visible light from the light-emitting element 14 but also absorbs ultraviolet light to make visible light. Can also emit light. Therefore, the light emitting device 10 can achieve light extraction efficiency superior to that of the conventional light emitting device, and is used for lighting fixtures, backlights for liquid crystal displays, moving picture illumination auxiliary light sources, other general consumer light sources, and the like. Is possible.
＜発光装置１０の製造方法＞
一実施態様の発光装置１０の製造方法は、以上説明した発光装置の構成を実現し得る限り特に制限されるものではないが、例えば、以下のようにして発光装置１０を製造することができる。
<Method for Manufacturing Light-Emitting Device 10>
Although the manufacturing method of the light-emitting device 10 of one embodiment is not specifically limited as long as the structure of the light-emitting device demonstrated above is realizable, For example, the light-emitting device 10 can be manufactured as follows.
まず、一対の電極を有する基体１２を用意する。また、上述の通り必要に応じて電極は三つ又はそれ以上存在してもよい。基板上に一対の電極を形成してこれを基体１２とする場合は、電極は、蒸着、スパッタリング、メッキ、フォトレジストを用いたビルドアップ法やサブトラクティブ法、金属箔の貼り付け、並びに導電性ペーストを用いた印刷法などの公知の方法により形成可能である。 First, a base 12 having a pair of electrodes is prepared. Further, as described above, three or more electrodes may be present as necessary. When a pair of electrodes is formed on the substrate and used as the base 12, the electrodes are formed by vapor deposition, sputtering, plating, a build-up method using a photoresist, a subtractive method, application of a metal foil, and conductivity. It can be formed by a known method such as a printing method using a paste.
この基体１２を、例えばトランスファー成形機の金型内に設置して、パッケージ部材１８の母材を構成する樹脂及び反射部材Ａ ２０を含む樹脂組成物を使用して、トランスファー成形により基体１２上にパッケージ部材１８を形成する。なお、必要に応じて前記樹脂の熱硬化も行う。反射部材Ａ ２０は上述の通り好ましくは所定の平均粒径を有しているので、前記樹脂組成物はハンドリング性に優れ、成形を円滑に行うことができる。 The base 12 is placed in, for example, a mold of a transfer molding machine, and a resin composition including a resin constituting the base material of the package member 18 and the reflection member A 20 is used to form the base 12 on the base 12 by transfer molding. The package member 18 is formed. If necessary, the resin is also thermally cured. Since the reflecting member A 20 preferably has a predetermined average particle diameter as described above, the resin composition is excellent in handling properties and can be molded smoothly.
また、パッケージ部材１８は射出成形や圧縮成形により形成することもできる。さらに、パッケージ部材１８は、滴下（ポッティング）法により、基体１２上に枠状に描画して形成することもできる。なお、基体１２とパッケージ部材１８を一体的に成形することも可能である。 The package member 18 can also be formed by injection molding or compression molding. Further, the package member 18 can also be formed by drawing a frame shape on the substrate 12 by a dropping (potting) method. Note that the base body 12 and the package member 18 can be integrally formed.
続いて基体１２上に発光素子１４を形成し、発光素子１４を電極やボンディングワイヤ２４により、基体１２の一対の電極と電気的に接続させる。 Subsequently, the light emitting element 14 is formed on the base 12, and the light emitting element 14 is electrically connected to the pair of electrodes of the base 12 by electrodes and bonding wires 24.
さらに、透光性樹脂による被覆を行って被覆部材２２を形成し、発光装置１０が完成する。前記被覆の方法としては従来公知の方法を特に制限なく使用することができる。また透光性樹脂には上記の通り波長変換部材や、その他の添加部材を含有させることもできる。 Furthermore, coating with a translucent resin is performed to form the coating member 22, and the light emitting device 10 is completed. As the coating method, a conventionally known method can be used without any particular limitation. Further, as described above, the light-transmitting resin can contain a wavelength conversion member and other additive members.
以上、主として図１に示す態様の発光装置の製造方法について説明したが、図２に示す態様の発光装置は、発光素子１４のｎ側電極及びｐ側電極上に其々突起電極である基体１２をメッキなどにより形成した後、上述と同様の方法により、発光素子１４及び基体１２の側方を被覆するようにパッケージ部材１８を成形し、さらに被覆部材２２により発光素子１４及びパッケージ部材１８の上方を被覆すればよい。 The manufacturing method of the light emitting device of the aspect shown in FIG. 1 has been mainly described above, but the light emitting device of the aspect shown in FIG. 2 is a base 12 that is a protruding electrode on the n-side electrode and the p-side electrode of the light-emitting element 14 respectively. Is formed by plating or the like, and then the package member 18 is formed by the same method as described above so as to cover the side of the light emitting element 14 and the base 12, and the covering member 22 is used to form the upper part of the light emitting element 14 and the package member 18. May be coated.
１０ 発光装置
１２ 基体
１２ａ 絶縁体
１４ 発光素子
１６ 接着剤
１８ パッケージ部材
２０ 反射部材Ａ
２２ 被覆部材
２４ ボンディングワイヤ
DESCRIPTION OF SYMBOLS 10 Light-emitting device 12 Base 12a Insulator 14 Light-emitting element 16 Adhesive 18 Package member 20 Reflective member A
22 Coating member 24 Bonding wire
Claims (11)
前記パッケージ部材が、波長４４０ｎｍ以上の可視光に対して６０％以上１００％以下の反射率を有し、かつ前記紫外光を発する発光素子からの紫外光を吸収して可視光を発光する反射部材Ａを含み、
前記波長変換部材は、前記可視光を発する発光素子からの可視光と前記反射部材Ａからの可視光とを吸収し発光する、発光装置。
A base having a pair of electrodes, a light emitting element that emits ultraviolet light and a light emitting element that emits visible light, which are electrically connected to the pair of electrodes, and a light emitting element that emits visible light; A light emitting device comprising: a package member surrounding the light emitting element; a covering member that covers the light emitting element and contacts the package member; and a wavelength conversion member contained in the covering member,
The package member has a reflectance of 60% or more and 100% or less with respect to visible light having a wavelength of 440 nm or more, and absorbs ultraviolet light from the light emitting element that emits ultraviolet light to emit visible light. Including A,
The wavelength conversion member is a light emitting device that absorbs visible light from a light emitting element that emits visible light and visible light from the reflective member A to emit light.
一般式（Ｂａ，Ｍ）Ａｌ１０Ｏ１７：Ｅｕ，Ｍｎ（但しＭはＳｒ，Ｃａ，及びＭｇからなる群より選ばれた少なくとも一種の元素）で表される２価のユーロピウム及び２価のマンガン共付活アルカリ土類アルミン酸塩、
一般式Ｃｅ（Ｍｇ，Ｚｎ）ａＡｌ１１Ｏ１９−ａ：Ｍｎ（但し０．４≦ａ≦１．０）で表される３価のセリウム及び２価のマンガン共付活亜鉛マグネシウムアルミン酸塩；、式ＣｅＭｇＡｌ１１Ｏ１９：Ｔｂで表される３価のセリウム及び３価のテルビウム共付活マグネシウムアルミン酸塩、
式ＬａＰＯ４：Ｃｅ，Ｔｂで表される３価のセリウム及び３価のテルビウム共付活ランタンリン酸塩、
一般式Ｍ２Ｐ２Ｏ７：Ｅｕ（但しＭはＳｒ，Ｃａ，Ｂａ，及びＭｇからなる群より選ばれた少なくとも一種の元素）で表される２価のユーロピウム付活アルカリ土類ピロリン酸塩、及び
ユーロピウム付活アルカリ土類ハロリン酸塩からなる群より選ばれる少なくとも一種である、請求項１〜６のいずれかに記載の発光装置。 The reflective member A is attached with divalent europium represented by the general formula (Ba, M) Al 10 O 17 : Eu (where M is at least one element selected from the group consisting of Sr, Ca, and Mg). Active alkaline earth aluminate,
Divalent europium and divalent manganese represented by the general formula (Ba, M) Al 10 O 17 : Eu, Mn (where M is at least one element selected from the group consisting of Sr, Ca, and Mg) Co-activated alkaline earth aluminate,
Formula Ce (Mg, Zn) a Al 11 O 19-a: Mn ( where 0.4 ≦ a ≦ 1.0) 3 trivalent cerium and bivalent active zinc magnesium aluminate with manganese co represented by A trivalent cerium represented by the formula CeMgAl 11 O 19 : Tb and a trivalent terbium co-activated magnesium aluminate;
Formula LaPO 4 : Trivalent cerium represented by Ce, Tb and trivalent terbium co-activated lanthanum phosphate,
Divalent europium-activated alkaline earth pyrophosphate represented by the general formula M 2 P 2 O 7 : Eu (where M is at least one element selected from the group consisting of Sr, Ca, Ba, and Mg) And a light-emitting device according to claim 1, wherein the light-emitting device is at least one selected from the group consisting of europium-activated alkaline earth halophosphates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013243781A JP6244857B2 (en) | 2013-11-26 | 2013-11-26 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013243781A JP6244857B2 (en) | 2013-11-26 | 2013-11-26 | Light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015103694A JP2015103694A (en) | 2015-06-04 |
| JP6244857B2 true JP6244857B2 (en) | 2017-12-13 |
Family
ID=53379169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013243781A Active JP6244857B2 (en) | 2013-11-26 | 2013-11-26 | Light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6244857B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102369820B1 (en) * | 2017-03-22 | 2022-03-03 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Semiconductor device package and light system having the same |
| JP7502667B2 (en) | 2022-03-29 | 2024-06-19 | 日亜化学工業株式会社 | Method for manufacturing light reflecting member and method for manufacturing light emitting device including light reflecting member |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002252372A (en) * | 2001-02-26 | 2002-09-06 | Nichia Chem Ind Ltd | Light-emitting diode |
| JP4337574B2 (en) * | 2003-09-25 | 2009-09-30 | 日亜化学工業株式会社 | LIGHT EMITTING DEVICE AND METHOD FOR FORMING THE SAME |
| JP4972904B2 (en) * | 2005-10-03 | 2012-07-11 | 三菱化学株式会社 | Phosphor, method for manufacturing the phosphor, light-emitting device using the phosphor, image display device, and illumination device |
| JP2007273562A (en) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | Semiconductor light-emitting device |
| JP2008075080A (en) * | 2006-08-23 | 2008-04-03 | Osaka Univ | Light emitting apparatus, image displaying apparatus, and illuminating apparatus |
| US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| WO2011118108A1 (en) * | 2010-03-23 | 2011-09-29 | 株式会社朝日ラバー | Silicone resin reflective substrate, manufacturing method for same, and base material composition used in reflective substrate |
-
2013
- 2013-11-26 JP JP2013243781A patent/JP6244857B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015103694A (en) | 2015-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4991026B2 (en) | Light emitting device | |
| JP4244653B2 (en) | Silicon nitride phosphor and light emitting device using the same | |
| JP5422721B2 (en) | White LED lamp, backlight and lighting device | |
| US7854859B2 (en) | Nitride phosphor, method for producing this nitride phosphor, and light emitting device that uses this nitride phosphor | |
| JP5326182B2 (en) | Light emitting device, phosphor for light emitting element, and method for manufacturing the same | |
| JP5066786B2 (en) | Nitride phosphor and light emitting device using the same | |
| JP2005340748A (en) | Light emitting device | |
| JP2006524425A (en) | White semiconductor light emitting device | |
| JP2002353516A (en) | Light-emitting device | |
| JP2004071908A (en) | Light emitting device | |
| JP6724634B2 (en) | Method for manufacturing light emitting device | |
| JP2004210921A (en) | Oxynitride fluorophor and method for producing the same and light-emitting device using the same | |
| JP2008270781A (en) | Light-emitting device | |
| JP6959502B2 (en) | Light emitting device | |
| JP5194675B2 (en) | Light emitting device | |
| JP7108171B2 (en) | light emitting device | |
| JP4187033B2 (en) | Light emitting device | |
| JP4899431B2 (en) | Nitride-based phosphor and light-emitting device using the same | |
| JP5462211B2 (en) | White light emitting device | |
| JP6244857B2 (en) | Light emitting device | |
| JP2008244468A (en) | Light-emitting device | |
| JP6068473B2 (en) | Wavelength converting particle, wavelength converting member, and light emitting device | |
| US10243124B2 (en) | Light emitting device | |
| JP4991027B2 (en) | Oxynitride phosphor and light emitting device using the same | |
| JP4215046B2 (en) | Nitride phosphor and light emitting device using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20150317 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20160222 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160523 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20161019 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20161024 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170222 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170307 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170421 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170606 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170803 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171017 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171030 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6244857 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |