JP6232687B2 - 半導体装置とその動作方法 - Google Patents

半導体装置とその動作方法 Download PDF

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JP6232687B2
JP6232687B2 JP2016207074A JP2016207074A JP6232687B2 JP 6232687 B2 JP6232687 B2 JP 6232687B2 JP 2016207074 A JP2016207074 A JP 2016207074A JP 2016207074 A JP2016207074 A JP 2016207074A JP 6232687 B2 JP6232687 B2 JP 6232687B2
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semiconductor
reverse conducting
voltage
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JP2017011319A (ja
JP2017011319A5 (OSRAM
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良孝 菅原
良孝 菅原
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2016207074A 2016-10-21 2016-10-21 半導体装置とその動作方法 Active JP6232687B2 (ja)

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JP2012171456A Division JP2014022708A (ja) 2012-07-17 2012-07-17 半導体装置とその動作方法

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JP2017165059A Division JP2017228790A (ja) 2017-08-30 2017-08-30 半導体装置とその動作方法

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JP2017011319A JP2017011319A (ja) 2017-01-12
JP2017011319A5 JP2017011319A5 (OSRAM) 2017-06-08
JP6232687B2 true JP6232687B2 (ja) 2017-11-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11824056B2 (en) 2021-01-29 2023-11-21 Kabushiki Kaisha Toshiba Trench gate IGBT with carrier trap under the control electrode

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111048585B (zh) * 2019-12-11 2021-06-11 四川大学 一种含有背面槽型介质及浮空区的逆导型igbt
CN115148783A (zh) * 2021-03-31 2022-10-04 四川大学 一种含有高阻p-top区的逆导型超结IGBT
CN117116938B (zh) * 2023-10-24 2024-01-23 上海功成半导体科技有限公司 一种功率器件及其制备方法
CN119153507B (zh) * 2024-11-19 2025-02-11 深圳平湖实验室 一种半导体器件及其制备方法和电子设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005020320A1 (ja) * 2003-08-22 2005-03-03 The Kansai Electric Power Co., Inc. 半導体装置及びその製造方法、この半導体装置を用いた電力変換装置
WO2008015764A1 (en) * 2006-08-04 2008-02-07 The Kansai Electric Power Co., Inc. Operating method of bipolar semiconductor device and bipolar semiconductor device
JP2011187693A (ja) * 2010-03-09 2011-09-22 Toshiba Corp 半導体装置
JP2012099630A (ja) * 2010-11-02 2012-05-24 Panasonic Corp 半導体装置および電力変換器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11824056B2 (en) 2021-01-29 2023-11-21 Kabushiki Kaisha Toshiba Trench gate IGBT with carrier trap under the control electrode

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