JP6227386B2 - 半導体ヘテロ構造電界効果トランジスタおよびその製造方法 - Google Patents

半導体ヘテロ構造電界効果トランジスタおよびその製造方法 Download PDF

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JP6227386B2
JP6227386B2 JP2013244597A JP2013244597A JP6227386B2 JP 6227386 B2 JP6227386 B2 JP 6227386B2 JP 2013244597 A JP2013244597 A JP 2013244597A JP 2013244597 A JP2013244597 A JP 2013244597A JP 6227386 B2 JP6227386 B2 JP 6227386B2
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JP2014132643A5 (enExample
JP2014132643A (ja
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モハマド・アリ・ポールガデリ
バルト・ソレ
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Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/383—Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2013244597A 2012-12-07 2013-11-27 半導体ヘテロ構造電界効果トランジスタおよびその製造方法 Active JP6227386B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261734854P 2012-12-07 2012-12-07
US61/734,854 2012-12-07
EP13155745.6A EP2741337B1 (en) 2012-12-07 2013-02-19 Semiconductor heterostructure field effect transistor and method for making thereof
EP13155745.6 2013-02-19

Publications (3)

Publication Number Publication Date
JP2014132643A JP2014132643A (ja) 2014-07-17
JP2014132643A5 JP2014132643A5 (enExample) 2017-01-12
JP6227386B2 true JP6227386B2 (ja) 2017-11-08

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JP2013244597A Active JP6227386B2 (ja) 2012-12-07 2013-11-27 半導体ヘテロ構造電界効果トランジスタおよびその製造方法

Country Status (3)

Country Link
US (1) US9093516B2 (enExample)
EP (1) EP2741337B1 (enExample)
JP (1) JP6227386B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727027B2 (en) 2000-12-26 2004-04-27 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8916927B2 (en) * 2012-07-19 2014-12-23 Taiwan Semiconductor Manufacturing Vertical tunnel field effect transistor (FET)
US11004985B2 (en) 2016-05-30 2021-05-11 Samsung Electronics Co., Ltd. Semiconductor device having multi-thickness nanowire
KR20170135115A (ko) * 2016-05-30 2017-12-08 삼성전자주식회사 반도체 장치 및 그 제조 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3443343B2 (ja) 1997-12-03 2003-09-02 松下電器産業株式会社 半導体装置
US6803631B2 (en) 2003-01-23 2004-10-12 Advanced Micro Devices, Inc. Strained channel finfet
US6921982B2 (en) 2003-07-21 2005-07-26 International Business Machines Corporation FET channel having a strained lattice structure along multiple surfaces
US6888181B1 (en) 2004-03-18 2005-05-03 United Microelectronics Corp. Triple gate device having strained-silicon channel
US7154118B2 (en) 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
GB0415891D0 (en) * 2004-07-16 2004-08-18 Koninkl Philips Electronics Nv Nanoscale fet
CN1822385B (zh) * 2005-01-31 2013-02-06 株式会社半导体能源研究所 显示装置及含有其的电子设备
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
US20060292776A1 (en) 2005-06-27 2006-12-28 Been-Yih Jin Strained field effect transistors
KR20090075819A (ko) * 2006-09-19 2009-07-09 큐나노 에이비 나노스케일 전계 효과 트랜지스터의 조립체
US7928426B2 (en) 2007-03-27 2011-04-19 Intel Corporation Forming a non-planar transistor having a quantum well channel
US20090001415A1 (en) 2007-06-30 2009-01-01 Nick Lindert Multi-gate transistor with strained body
US8629478B2 (en) 2009-07-31 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure for high mobility multiple-gate transistor
US8344425B2 (en) 2009-12-30 2013-01-01 Intel Corporation Multi-gate III-V quantum well structures
WO2011105397A1 (ja) * 2010-02-25 2011-09-01 国立大学法人北海道大学 半導体装置及び半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727027B2 (en) 2000-12-26 2004-04-27 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask

Also Published As

Publication number Publication date
US20140158985A1 (en) 2014-06-12
US9093516B2 (en) 2015-07-28
EP2741337B1 (en) 2018-04-11
EP2741337A1 (en) 2014-06-11
JP2014132643A (ja) 2014-07-17

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