JP6223333B2 - 静電チャックアセンブリ - Google Patents

静電チャックアセンブリ Download PDF

Info

Publication number
JP6223333B2
JP6223333B2 JP2014519127A JP2014519127A JP6223333B2 JP 6223333 B2 JP6223333 B2 JP 6223333B2 JP 2014519127 A JP2014519127 A JP 2014519127A JP 2014519127 A JP2014519127 A JP 2014519127A JP 6223333 B2 JP6223333 B2 JP 6223333B2
Authority
JP
Japan
Prior art keywords
pack
base
electrostatic chuck
ring
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014519127A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014521213A5 (enExample
JP2014521213A (ja
Inventor
バーナード エル． ホワン，
バーナード エル． ホワン，
ホセ アントニオ マリン，
ホセ アントニオ マリン，
ソン ティー． グェン，
ソン ティー． グェン，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2014521213A publication Critical patent/JP2014521213A/ja
Publication of JP2014521213A5 publication Critical patent/JP2014521213A5/ja
Application granted granted Critical
Publication of JP6223333B2 publication Critical patent/JP6223333B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2014519127A 2011-07-01 2012-06-29 静電チャックアセンブリ Active JP6223333B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161504000P 2011-07-01 2011-07-01
US61/504,000 2011-07-01
US13/536,098 US9117867B2 (en) 2011-07-01 2012-06-28 Electrostatic chuck assembly
US13/536,098 2012-06-28
PCT/US2012/044838 WO2013006407A1 (en) 2011-07-01 2012-06-29 Electrostatic chuck assembly

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017149233A Division JP2017216475A (ja) 2011-07-01 2017-08-01 静電チャックアセンブリ

Publications (3)

Publication Number Publication Date
JP2014521213A JP2014521213A (ja) 2014-08-25
JP2014521213A5 JP2014521213A5 (enExample) 2015-07-23
JP6223333B2 true JP6223333B2 (ja) 2017-11-01

Family

ID=47389823

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2014519127A Active JP6223333B2 (ja) 2011-07-01 2012-06-29 静電チャックアセンブリ
JP2017149233A Pending JP2017216475A (ja) 2011-07-01 2017-08-01 静電チャックアセンブリ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017149233A Pending JP2017216475A (ja) 2011-07-01 2017-08-01 静電チャックアセンブリ

Country Status (5)

Country Link
US (1) US9117867B2 (enExample)
JP (2) JP6223333B2 (enExample)
KR (1) KR102025908B1 (enExample)
CN (1) CN103650127B (enExample)
WO (1) WO2013006407A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017216475A (ja) * 2011-07-01 2017-12-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 静電チャックアセンブリ

Families Citing this family (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
JP5989593B2 (ja) * 2012-04-27 2016-09-07 日本碍子株式会社 半導体製造装置用部材
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
JP2014093420A (ja) * 2012-11-02 2014-05-19 Toyota Motor Corp ウェハを支持ディスクに接着する治具、および、それを用いた半導体装置の製造方法
JP6017328B2 (ja) * 2013-01-22 2016-10-26 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
JP6075555B2 (ja) * 2013-07-05 2017-02-08 日新イオン機器株式会社 静電チャックシステムおよび半導体製造装置
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
WO2015013142A1 (en) 2013-07-22 2015-01-29 Applied Materials, Inc. An electrostatic chuck for high temperature process applications
WO2015013143A1 (en) 2013-07-22 2015-01-29 Applied Materials, Inc. An end effector for transferring a substrate
WO2015020813A1 (en) 2013-08-06 2015-02-12 Applied Materials, Inc. Locally heated multi-zone substrate support
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US10252397B2 (en) 2014-10-30 2019-04-09 Applied Materials, Inc. Methods and apparatus for profile and surface preparation of retaining rings utilized in chemical mechanical polishing processes
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US10186444B2 (en) * 2015-03-20 2019-01-22 Applied Materials, Inc. Gas flow for condensation reduction with a substrate processing chuck
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10777442B2 (en) * 2016-11-18 2020-09-15 Applied Materials, Inc. Hybrid substrate carrier
US10784139B2 (en) * 2016-12-16 2020-09-22 Applied Materials, Inc. Rotatable electrostatic chuck having backside gas supply
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
JP6960737B2 (ja) * 2017-01-23 2021-11-05 株式会社日立ハイテク 真空処理装置
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10147610B1 (en) 2017-05-30 2018-12-04 Lam Research Corporation Substrate pedestal module including metallized ceramic tubes for RF and gas delivery
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US11004722B2 (en) 2017-07-20 2021-05-11 Applied Materials, Inc. Lift pin assembly
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
CN107808848B (zh) 2017-11-28 2024-10-25 北京北方华创微电子装备有限公司 静电卡盘以及半导体设备
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
KR102411272B1 (ko) 2018-03-26 2022-06-22 엔지케이 인슐레이터 엘티디 정전척 히터
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11424096B2 (en) * 2019-11-05 2022-08-23 Applied Materials, Inc. Temperature controlled secondary electrode for ion control at substrate edge
US12334315B2 (en) * 2020-04-30 2025-06-17 Applied Materials, Inc. Cooled substrate support assembly for radio frequency environments
KR102721404B1 (ko) * 2022-05-19 2024-10-25 세메스 주식회사 기판 지지 장치 및 이를 포함하는 기판 처리 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01200625A (ja) * 1988-02-05 1989-08-11 Toshiba Corp 半導体ウェーハ処理装置
JP3297771B2 (ja) * 1993-11-05 2002-07-02 ソニー株式会社 半導体製造装置
EP0764979A3 (en) * 1995-09-20 1998-07-15 Hitachi, Ltd. Electrostatically attracting electrode and a method of manufacture thereof
US6138745A (en) * 1997-09-26 2000-10-31 Cvc Products, Inc. Two-stage sealing system for thermally conductive chuck
US6377437B1 (en) * 1999-12-22 2002-04-23 Lam Research Corporation High temperature electrostatic chuck
US6669783B2 (en) * 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
US6623605B2 (en) * 2001-12-06 2003-09-23 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
JP4386360B2 (ja) * 2004-12-06 2009-12-16 信越化学工業株式会社 静電チャック
JP5660753B2 (ja) * 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
JP2009054932A (ja) * 2007-08-29 2009-03-12 Shinko Electric Ind Co Ltd 静電チャック
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
US20100018648A1 (en) 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
JP5237151B2 (ja) * 2009-02-23 2013-07-17 三菱重工業株式会社 プラズマ処理装置の基板支持台
US8481433B2 (en) 2009-03-31 2013-07-09 Applied Materials, Inc. Methods and apparatus for forming nitrogen-containing layers
KR102219924B1 (ko) * 2009-08-31 2021-02-23 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
US9117867B2 (en) * 2011-07-01 2015-08-25 Applied Materials, Inc. Electrostatic chuck assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017216475A (ja) * 2011-07-01 2017-12-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 静電チャックアセンブリ

Also Published As

Publication number Publication date
CN103650127B (zh) 2017-12-19
CN103650127A (zh) 2014-03-19
KR102025908B1 (ko) 2019-09-26
JP2017216475A (ja) 2017-12-07
US9117867B2 (en) 2015-08-25
JP2014521213A (ja) 2014-08-25
KR20140045999A (ko) 2014-04-17
WO2013006407A1 (en) 2013-01-10
US20130001899A1 (en) 2013-01-03

Similar Documents

Publication Publication Date Title
JP6223333B2 (ja) 静電チャックアセンブリ
US11282734B2 (en) Electrostatic chuck and method for manufacturing the same
US11289356B2 (en) Stage and plasma processing apparatus
TWI651798B (zh) 載置台及電漿處理裝置
TWI676234B (zh) 具有凸起的頂板及冷卻通道的靜電夾盤
CN103891417B (zh) 具有腔室壁温度控制的等离子体反应器
US20180190501A1 (en) Plasma processing apparatus
JP5179627B2 (ja) プラズマ処理チャンバ用の可動接地リング
US20130284374A1 (en) High temperature electrostatic chuck with real-time heat zone regulating capability
JP7402255B2 (ja) 高温用途のための着脱可能なバイアス可能な静電チャック
US11393664B2 (en) Substrate placing table, plasma processing apparatus provided with same, and plasma processing method
US20130299605A1 (en) Compression member for use in showerhead electrode assembly
US20090283976A1 (en) Substrate holding apparatus
KR20110041499A (ko) 고온의 정전식 척
KR20060129279A (ko) 플라즈마 프로세싱 장치용 샤워헤드 전극 어셈블리
CN113169111A (zh) 具有改良的热耦合以用于热敏感处理的静电吸盘
US11705346B2 (en) Substrate processing apparatus
US20120325796A1 (en) Semiconductor manufacturing apparatus
KR20250169188A (ko) 열 성능 및 누설 전류 안정성을 개선하기 위한 하이브리드 퍽들을 갖는 정전척들

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150602

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150604

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160609

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160614

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160815

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161115

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170207

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170404

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170801

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20170809

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170905

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171003

R150 Certificate of patent or registration of utility model

Ref document number: 6223333

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250