JP6208868B2 - 有機el部品の製造方法及び製造された有機el部品 - Google Patents
有機el部品の製造方法及び製造された有機el部品 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000010410 layer Substances 0.000 claims description 253
- 239000000758 substrate Substances 0.000 claims description 71
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000002184 metal Substances 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000002346 layers by function Substances 0.000 claims description 19
- 238000007789 sealing Methods 0.000 claims description 16
- 230000005525 hole transport Effects 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 239000004973 liquid crystal related substance Substances 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 229920001621 AMOLED Polymers 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/45—Ohmic electrodes
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- H10K59/10—OLED displays
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- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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Description
図3から図9までを参照する。本発明が提供する有機EL部品の製造方法は、以下の工程を含む。
図9及び図10を参照する。本発明が提供する有機EL部品は、基板20と、基板20上に形成された第一電極21と、第一電極21及び基板20上に形成されたゲート絶縁層22と、ゲート絶縁層22上に形成された第二電極23と、第二電極23及びゲート絶縁層22上に形成された酸化物半導体層24と、酸化物半導体層24及び第二電極23上に形成された有機平坦化層25と、ゲート絶縁層22上に位置する透明電極26とからなる。第二電極23は、第二金属層224と、第二金属層224下方に位置する透明導電性層222とからなる。透明電極26は、透明導電性層222によって形成される。このうち、第一電極21はゲートであり、第二電極23はソース/ドレインである。前記ゲート・ゲート絶縁層22・ソース/ドレイン・酸化物半導体層24は、薄膜トランジスタを形成するとともに、有機EL部品を駆動するために用いられる。
100 基板
101 ゲート
102 ゲート絶縁層
103 ソース/ドレイン
104 酸化物半導体層
105 第一有機平坦化層
106 透明電極
107 第二有機平坦化層
302 薄膜トランジスタ基板
304 カラーフィルタ基板
306 液晶層
(本発明)
20 基板
21 第一電極
22 ゲート絶縁層
222 透明導電性層
224 第二金属層
23 第二電極
24 酸化物半導体層
25 有機平坦化層
26 透明電極
Claims (9)
- 以下の工程を含む、有機EL部品の製造方法であって、
工程1では、基板を用意し、
工程2では、基板上に第一金属層を形成するとともに、前記第一金属層をパターン化することで、第一電極を形成し、
工程3では、前記第一電極及び基板上にゲート絶縁層を形成し、
工程4では、前記ゲート絶縁層上に透明導電性層及び第二金属層を順に形成するとともに、前記第二金属層及び透明導電性層をパターン化することで、第二電極を形成し、
更に前記第二電極は、前記第二金属層と、前記第二金属層下方に位置する前記透明導電性層とからなり、
工程5では、前記第二電極及び前記ゲート絶縁層上に酸化物半導体層を形成し、且つ前記酸化物半導体層をパターン化し、
工程6では、前記酸化物半導体層及び第二電極上に有機平坦化層を形成するとともに、前記有機平坦化層をパターン化し、
工程7では、前記有機平坦化層をマスクとして前記第二電極の第二金属層をエッチングして、前記透明導電性層を露出させ、
このとき、前記エッチングによって露出する前記透明導電性層は、その周囲が前記第二金属層で囲まれており、これによって周囲が前記第二金属層で囲まれた透明電極を形成し、
更に、
工程8では、前記有機平坦化層上に仕切り層を形成し、
工程9では、前記透明電極上に有機機能層を蒸着し、前記有機機能層上に陰極を蒸着し、
工程10では、封止用キャップを用意して、封止を行う
ことを特徴とする有機EL部品の製造方法。 - 請求項1に記載の有機EL部品の製造方法において、
更に、前記工程1は、基板を用意して洗浄した後、前記基板上に緩衝層を形成する工程を含む
ことを特徴とする有機EL部品の製造方法。 - 請求項2に記載の有機EL部品の製造方法において、
更に、前記工程2において、前記第一金属層は前記緩衝層上に形成される
ことを特徴とする有機EL部品の製造方法。 - 請求項1に記載の有機EL部品の製造方法において、
更に、前記第一金属層及び第二金属層は、アルミニウム或はモリブデンの中の少なくとも一種からなり、
前記透明導電性層は、酸化インジウムスズ或は銀の中の少なくとも一種からなり、
前記基板及び封止用キャップは、いずれもガラス基板である
ことを特徴とする有機EL部品の製造方法。 - 請求項1に記載の有機EL部品の製造方法において、
更に、前記有機機能層は、透明電極上に形成された正孔輸送層と、前記正孔輸送層上に形成された有機発光層と、前記有機発光層上に形成された電子輸送層とからなる
ことを特徴とする有機EL部品の製造方法。 - 基板と、第一電極と、ゲート絶縁層と、第二電極と、酸化物半導体層と、有機平坦化層と、透明電極とからなる、有機EL部品であって、
前記第一電極は、前記基板上に形成され、
前記ゲート絶縁層は、前記第一電極及び基板上に形成され、
前記第二電極は、前記ゲート絶縁層上に形成され、
前記酸化物半導体層は、前記第二電極及びゲート絶縁層上に形成され、
前記有機平坦化層は、前記酸化物半導体層及び第二電極上に形成され、
前記透明電極は、前記ゲート絶縁層上に位置し、
前記第二電極は、第二金属層と、前記第二金属層下方に位置する透明導電性層とからなり、
前記透明電極は、前記透明導電性層によって形成されており、
前記透明電極は、前記第二電極の第二金属層をエッチングして前記透明導電性層を露出させたものであって、その周囲が前記第二金属層で囲まれている
ことを特徴とする有機EL部品。 - 請求項6に記載の有機EL部品において、
更に、前記有機EL部品には、前記基板と第一電極の間に形成された緩衝層と、前記有機平坦化層上に形成された仕切り層と、前記透明電極上に形成された有機機能層と、前記有機機能層上に形成された陰極と、前記基板と貼合された封止用キャップが設けられる
ことを特徴とする有機EL部品。 - 請求項7に記載の有機EL部品において、
更に、前記有機機能層は、透明電極上に形成された正孔輸送層と、前記正孔輸送層上に形成された有機発光層と、前記有機発光層上に形成された電子輸送層とからなる
ことを特徴とする有機EL部品。 - 請求項7に記載の有機EL部品において、
更に、前記第一電極及び第二金属層は、アルミニウム或はモリブデンの中の少なくとも一種からなり、
前記透明電極は、酸化インジウムスズ或は銀の中の少なくとも一種からなり、
前記基板及び封止用キャップは、いずれもガラス基板である
ことを特徴とする有機EL部品。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310566264.9 | 2013-11-13 | ||
CN201310566264.9A CN103560211B (zh) | 2013-11-13 | 2013-11-13 | 有机电致发光器件的制作方法及制作的有机电致发光器件 |
PCT/CN2013/087881 WO2015070484A1 (zh) | 2013-11-13 | 2013-11-26 | 有机电致发光器件的制作方法及制作的有机电致发光器件 |
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US8153184B2 (en) * | 2001-11-26 | 2012-04-10 | Samsung Mobile Display Co., Ltd. | Organic EL display device and method of manufacturing the same |
KR100656490B1 (ko) * | 2001-11-26 | 2006-12-12 | 삼성에스디아이 주식회사 | 풀칼라 유기전계 발광표시소자 및 그의 제조방법 |
JP2004071558A (ja) * | 2002-07-25 | 2004-03-04 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法 |
SG130013A1 (en) * | 2002-07-25 | 2007-03-20 | Semiconductor Energy Lab | Method of fabricating light emitting device |
JP4434563B2 (ja) * | 2002-09-12 | 2010-03-17 | パイオニア株式会社 | 有機el表示装置の製造方法 |
TWI228782B (en) * | 2004-01-19 | 2005-03-01 | Toppoly Optoelectronics Corp | Method of fabricating display panel |
KR100669733B1 (ko) * | 2004-10-14 | 2007-01-16 | 삼성에스디아이 주식회사 | 유기박막 트랜지스터 및 이를 이용한 유기전계 발광표시장치 |
JP5210594B2 (ja) * | 2006-10-31 | 2013-06-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5372337B2 (ja) * | 2007-03-27 | 2013-12-18 | 住友化学株式会社 | 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法 |
US8441007B2 (en) * | 2008-12-25 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
JP5499529B2 (ja) * | 2009-06-25 | 2014-05-21 | 大日本印刷株式会社 | 薄膜トランジスタ搭載基板、その製造方法及び画像表示装置 |
KR20110015240A (ko) * | 2009-08-07 | 2011-02-15 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
JP5825812B2 (ja) * | 2011-03-24 | 2015-12-02 | 株式会社Joled | 表示装置の製造方法 |
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KR20160052625A (ko) | 2016-05-12 |
GB2534691B (en) | 2019-04-03 |
GB201600110D0 (en) | 2016-02-17 |
WO2015070484A1 (zh) | 2015-05-21 |
GB2570056A (en) | 2019-07-10 |
JP2016537772A (ja) | 2016-12-01 |
GB201902542D0 (en) | 2019-04-10 |
CN103560211A (zh) | 2014-02-05 |
CN103560211B (zh) | 2017-04-05 |
GB2534691A (en) | 2016-08-03 |
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